JP2004333761A - Catadioptric projection optical system, projection aligner, and exposure method - Google Patents

Catadioptric projection optical system, projection aligner, and exposure method Download PDF

Info

Publication number
JP2004333761A
JP2004333761A JP2003128154A JP2003128154A JP2004333761A JP 2004333761 A JP2004333761 A JP 2004333761A JP 2003128154 A JP2003128154 A JP 2003128154A JP 2003128154 A JP2003128154 A JP 2003128154A JP 2004333761 A JP2004333761 A JP 2004333761A
Authority
JP
Japan
Prior art keywords
optical system
projection optical
image
lens
imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003128154A
Other languages
Japanese (ja)
Other versions
JP2004333761A5 (en
Inventor
Yasuhiro Omura
泰弘 大村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=33504409&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP2004333761(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP2003128154A priority Critical patent/JP2004333761A/en
Priority to KR1020177029949A priority patent/KR20170119737A/en
Priority to KR1020147029384A priority patent/KR101521407B1/en
Priority to KR1020127032215A priority patent/KR101383984B1/en
Priority to EP13185918.3A priority patent/EP2722703A3/en
Priority to SG10201405231YA priority patent/SG10201405231YA/en
Priority to CN2007103061168A priority patent/CN101216598B/en
Priority to CN2007103061172A priority patent/CN101216599B/en
Priority to KR1020127010592A priority patent/KR101273713B1/en
Priority to KR1020147019611A priority patent/KR101516140B1/en
Priority to KR1020167021281A priority patent/KR101790914B1/en
Priority to KR1020137026333A priority patent/KR101481935B1/en
Priority to KR1020157005882A priority patent/KR101647934B1/en
Priority to KR1020147019615A priority patent/KR101516141B1/en
Priority to EP13175504.3A priority patent/EP2672307A3/en
Priority to CN200710306118.7A priority patent/CN101216682B/en
Priority to EP13185919.1A priority patent/EP2722704A3/en
Priority to CN2008100859109A priority patent/CN101295140B/en
Priority to KR1020137001768A priority patent/KR101384037B1/en
Priority to PCT/JP2004/006417 priority patent/WO2004107011A1/en
Priority to EP13185917.5A priority patent/EP2722702A3/en
Priority to CNB2004800120690A priority patent/CN100405119C/en
Priority to KR1020147019617A priority patent/KR101516142B1/en
Priority to KR1020117021027A priority patent/KR101194449B1/en
Priority to SG200717526-8A priority patent/SG160223A1/en
Priority to KR1020057020923A priority patent/KR20060009891A/en
Priority to CN2007103061191A priority patent/CN101216600B/en
Priority to EP04731484A priority patent/EP1630585A4/en
Publication of JP2004333761A publication Critical patent/JP2004333761A/en
Priority to IL171745A priority patent/IL171745A/en
Priority to US11/266,288 priority patent/US7348575B2/en
Priority to US11/513,160 priority patent/US9846366B2/en
Priority to US11/583,934 priority patent/US7309870B2/en
Priority to US11/583,916 priority patent/US7312463B2/en
Priority to US11/882,208 priority patent/US20070297072A1/en
Publication of JP2004333761A5 publication Critical patent/JP2004333761A5/ja
Priority to IL196080A priority patent/IL196080B/en
Priority to US12/379,415 priority patent/US9086635B2/en
Priority to US12/884,332 priority patent/US20110002032A1/en
Priority to US13/275,760 priority patent/US9081295B2/en
Priority to US13/889,780 priority patent/US9500943B2/en
Priority to US14/227,691 priority patent/US9606443B2/en
Priority to US14/227,726 priority patent/US9933705B2/en
Priority to US14/227,349 priority patent/US10156792B2/en
Priority to IL258355A priority patent/IL258355A/en
Priority to US16/016,515 priority patent/US20180299785A1/en
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0804—Catadioptric systems using two curved mirrors
    • G02B17/0812—Catadioptric systems using two curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/22—Telecentric objectives or lens systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0892—Catadioptric systems specially adapted for the UV
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a relatively compact projection optical system that has an improved imaging performance while aberrations, such as chromatic aberrations and image surface curve, are appropriately corrected, and can secure a large number of effective image-side numerical apertures by properly restraining reflection loss on an optical surface. <P>SOLUTION: A catadioptric projection optical system forms a reduced image of a first surface (R) on a second surface (W). The optical system includes at least two reflectors (CM1, CM2), and a boundary lens (Lb), where a surface at a first surface side has positive refractive power. The optical path between the boundary lens and the second surface is filled with a medium (Lm), having a refractive index which is larger than 1.1. All transmission members for composing the projection optical system and all reflection members having refractive power are arranged along a single optical axis (AX), and an effective imaging region in a specified shape which does not include light axes, is provided. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は、反射屈折型の投影光学系、露光装置、および露光方法に関し、特に半導体素子や液晶表示素子などをフォトリソグラフィ工程で製造する際に使用される露光装置に適した高解像の反射屈折型の投影光学系に関する。
【０００２】
【従来の技術】
半導体素子等を製造するためのフォトリソグラフィ工程において、マスク（またはレチクル）のパターン像を、投影光学系を介して、フォトレジスト等が塗布されたウェハ（またはガラスプレート等）上に露光する投影露光装置が使用されている。そして、半導体素子等の集積度が向上するにつれて、投影露光装置の投影光学系に要求される解像力（解像度）が益々高まっている。
【０００３】
その結果、投影光学系の解像力に対する要求を満足するために、照明光（露光光）の波長λを短くするとともに投影光学系の像側開口数ＮＡを大きくする必要がある。具体的には、投影光学系の解像度は、ｋ・λ／ＮＡ（ｋはプロセス係数）で表される。また、像側開口数ＮＡは、投影光学系と像面との間の媒質（通常は空気などの気体）の屈折率をｎとし、像面への最大入射角をθとすると、ｎ・ｓｉｎθで表される。
【０００４】
【発明が解決しようとする課題】
この場合、最大入射角θを大きくすることにより開口数ＮＡの増大を図ろうとすると、像面への入射角および投影光学系からの射出角が大きくなり、光学面での反射損失が増大して、大きな実効的な像側開口数を確保することはできない。そこで、投影光学系と像面との間の光路中に屈折率の高い液体のような媒質を満たすことにより開口数ＮＡの増大を図る技術が知られている。
【０００５】
しかしながら、この技術を通常の屈折型投影光学系に適用すると、色収差を良好に補正することやペッツバール条件を満足して像面湾曲を良好に補正することが難しく、光学系の大型化も避けられないという不都合があった。また、光学面での反射損失を良好に抑えて大きな実効的な像側開口数を確保することが困難であるという不都合があった。
【０００６】
本発明は、前述の課題に鑑みてなされたものであり、色収差や像面湾曲などの諸収差が良好に補正されて優れた結像性能を有し、光学面での反射損失を良好に抑えて大きな実効的な像側開口数を確保することのできる比較的小型の投影光学系を提供することを目的とする。また、本発明は、優れた結像性能を有し且つ大きな実効的な像側開口数ひいては高い解像度を有する投影光学系を介して、微細なパターンを高精度に転写露光することのできる露光装置および露光方法を提供することを目的とする。
【０００７】
【課題を解決するための手段】
前記課題を解決するために、本発明の第１形態では、第１面の縮小像を第２面上に形成する反射屈折型の投影光学系において、
前記投影光学系は、少なくとも２枚の反射鏡と、第１面側の面が正の屈折力を有する境界レンズとを含み、
前記投影光学系の光路中の雰囲気の屈折率を１とするとき、前記境界レンズと前記第２面との間の光路は１．１よりも大きい屈折率を有する媒質で満たされ、前記投影光学系を構成するすべての透過部材および屈折力を有するすべての反射部材は単一の光軸に沿って配置され、
前記投影光学系は、前記光軸を含まない所定形状の有効結像領域を有することを特徴とする投影光学系を提供する。なお、前記媒質は流体であることが好ましい。そして、前記媒質が液体であることがさらに好ましい。
【０００８】
第１形態の好ましい態様によれば、前記少なくとも２枚の反射鏡は、少なくとも１つの凹面反射鏡を有する。また、前記投影光学系は偶数個の反射鏡を有することが好ましい。また、前記投影光学系の射出瞳は遮蔽領域を有しないことが好ましい。また、前記投影光学系が有するすべての有効結像領域は前記光軸から外れた領域に存在することが好ましい。
【０００９】
また、第１形態の好ましい態様によれば、前記投影光学系は、少なくとも２つの反射鏡を含み前記第１面の中間像を形成するための第１結像光学系と、前記中間像からの光束に基づいて最終像を前記第２面上に形成するための第２結像光学系とを備えている。この場合、前記第１結像光学系は、正の屈折力を有する第１レンズ群と、該第１レンズ群と前記中間像との間の光路中に配置された第１反射鏡と、該第１反射鏡と前記中間像との間の光路中に配置された第２反射鏡とを備えていることが好ましい。
【００１０】
また、この場合、前記第１反射鏡は、前記第１結像光学系の瞳面の近傍に配置された凹面反射鏡であり、前記凹面反射鏡が形成する往復光路中には少なくとも１つの負レンズが配置されていることが好ましい。さらに、この場合、前記往復光路中に配置された前記少なくとも１つの負レンズおよび前記境界レンズは蛍石により形成されていることが好ましい。
【００１１】
また、第１形態の好ましい態様によれば、前記第１レンズ群の焦点距離をＦ１とし、前記第２面上における最大像高をＹ０とするとき、５＜Ｆ１／Ｙ０＜１５の条件を満足する。また、前記第１レンズ群は、少なくとも２つの正レンズを有することが好ましい。また、前記第２結像光学系は、複数の透過部材のみにより構成された屈折光学系であることが好ましい。この場合、前記第２結像光学系を構成する透過部材の数の７０％以上の数の透過部材は石英により形成されていることが好ましい。
【００１２】
また、第１形態の好ましい態様によれば、前記有効結像領域は円弧形状を有し、前記有効結像領域を規定する円弧の曲率半径の大きさをＲとし、前記第２面上における最大像高をＹ０とするとき、１．０５＜Ｒ／Ｙ０＜１２の条件を満足する。
【００１３】
本発明の第２形態では、第１面の縮小像を第２面上に形成する反射屈折型の投影光学系において、
少なくとも２枚の反射鏡と透過部材とを備え、且つ前記投影光学系の光軸を含まない円弧形状の有効結像領域を備え、
前記有効結像領域を規定する円弧の曲率半径の大きさをＲとし、前記第２面上における最大像高をＹ０とするとき、
１．０５＜Ｒ／Ｙ０＜１２
の条件を満足することを特徴とする投影光学系を提供する。
【００１４】
本発明の第３形態では、前記第１面に設定されたマスクを照明するための照明系と、前記マスクに形成されたパターンの像を前記第２面に設定された感光性基板上に形成するための第１形態または第２形態の投影光学系とを備えていることを特徴とする露光装置を提供する。
【００１５】
第３形態の好ましい態様によれば、前記投影光学系に対して前記マスクおよび前記感光性基板を所定方向に沿って相対移動させて前記マスクのパターンを前記感光性基板上へ投影露光する。
【００１６】
本発明の第４形態では、前記第１面に設定されたマスクを照明し、第１形態または第２形態の投影光学系を介して前記マスクに形成されたパターンを前記第２面に設定された感光性基板上に投影露光することを特徴とする露光方法を提供する。
【００１７】
【発明の実施の形態】
本発明の投影光学系では、境界レンズと像面（第２面）との間の光路中に１．１よりも大きい屈折率を有する媒質を介在させることにより、像側開口数ＮＡの増大を図っている。ちなみに、Ｍ．Ｓｗｉｔｋｅｓ氏およびＭ．Ｒｏｔｈｓｃｈｉｌｄ氏が「ＳＰＩＥ２００２ Ｍｉｃｒｏｌｉｔｈｏｇｒａｐｈｙ」において「Ｍａｓｓａｃｈｕｓｅｔｔｓ Ｉｎｓｔｉｔｕｔｅ ｏｆ Ｔｅｃｈｎｏｌｏｇｙ」に発表した「Ｒｅｓｏｌｕｔｉｏｎ Ｅｎｈａｎｃｅｍｅｎｔ ｏｆ １５７−ｎｍ Ｌｉｔｈｏｇｒａｐｈｙ ｂｙ Ｌｉｑｕｉｄ Ｉｍｍｅｒｓｉｏｎ」には、波長λが２００ｎｍ以下の光に対して所要の透過率を有する媒質として、フロリナート（Ｐｅｒｆｌｕｏｒｏｐｏｌｙｅｔｈｅｒｓ：米国スリーエム社の商品名）や脱イオン水（Ｄｅｉｏｎｉｚｅｄ Ｗａｔｅｒ）などが候補として挙げられている。
【００１８】
また、本発明の投影光学系では、境界レンズの物体側（第１面側）の光学面に正の屈折力を付与することにより、この光学面での反射損失を低減させ、ひいては大きな実効的な像側開口数を確保することができる。このように、像側に液体等の高屈折率物質を媒質として有する光学系では、実効的な像側開口数を１．０以上に高めることが可能であり、ひいては解像度を高めることができる。しかしながら、投影倍率が一定の場合、像側開口数の増大に伴って物体側開口数も大きくなるため、投影光学系を屈折部材だけで構成すると、ペッツバール条件を満足することが難しく、光学系の大型化も避けられない。
【００１９】
そこで、本発明の投影光学系では、少なくとも２枚の反射鏡を含み、すべての透過部材および屈折力（パワー）を有するすべての反射部材が単一光軸に沿って配置され、光軸を含まない所定形状の有効結像領域を有するタイプの反射屈折型光学系を採用している。このタイプの投影光学系では、たとえば凹面反射鏡の作用により、色収差を良好に補正するとともに、ペッツバール条件を容易に満足して像面湾曲を良好に補正することができ、しかも光学系の小型化が可能である。
【００２０】
また、このタイプの投影光学系では、すべての透過部材（レンズなど）およびパワーを有するすべての反射部材（凹面反射鏡など）が単一光軸に沿って配置されているので、光学部材が複数の光軸に沿ってそれぞれ配置される複数軸構成に比して製造上の難易度が格段に低くなり好適である。ただし、光学部材が単一光軸に沿って配置される単一軸構成の場合、色収差を良好に補正することが困難な傾向にあるが、たとえばＡｒＦレーザ光のように、スペクトル幅を狭帯化したレーザ光を用いることにより、この色収差補正の課題を克服することができる。
【００２１】
こうして、本発明では、色収差や像面湾曲などの諸収差が良好に補正されて優れた結像性能を有し、光学面での反射損失を良好に抑えて大きな実効的な像側開口数を確保することのできる比較的小型の投影光学系を実現することができる。したがって、本発明の投影光学系を用いる露光装置および露光方法では、優れた結像性能を有し且つ大きな実効的な像側開口数ひいては高い解像度を有する投影光学系を介して、微細なパターンを高精度に転写露光することができる。
【００２２】
なお、本発明では、投影光学系が偶数個の反射鏡を有するように構成すること、すなわち偶数回の反射を経て第１面の像が第２面上に形成されるように構成することが好ましい。この構成により、たとえば露光装置や露光方法に適用する場合、ウェハ上にはマスクパターンの裏面像ではなく表面像（正立像または倒立像）が形成されることになるので、屈折型投影光学系を搭載する露光装置と同様に通常のマスク（レチクル）を用いることができる。
【００２３】
ところで、本発明の反射屈折型投影光学系を単一光軸で構成するには、瞳位置近傍に中間像を形成する必要があるため、投影光学系は再結像光学系であることが望ましい。また、第１結像の瞳位置近傍に中間像を形成して光路分離を行いつつ光学部材同士の機械的干渉を避けるには、物体側開口数が大きくなった場合でも第１結像の瞳径をできるだけ小さくする必要があるので、開口数の小さい第１結像光学系が反射屈折光学系であることが望ましい。
【００２４】
したがって、本発明では、少なくとも２つの反射鏡を含み第１面の中間像を形成するための第１結像光学系と、この中間像からの光束に基づいて最終像を第２面上に形成するための第２結像光学系とにより投影光学系を構成することが好ましい。この場合、具体的には、正屈折力の第１レンズ群と、この第１レンズ群と中間像との間の光路中に配置された第１反射鏡と、この第１反射鏡と中間像との間の光路中に配置された第２反射鏡とを用いて、第１結像光学系を構成することができる。
【００２５】
また、第１反射鏡は、第１結像光学系の瞳面の近傍に配置された凹面反射鏡であり、この凹面反射鏡が形成する往復光路中には少なくとも１つの負レンズが配置されていることが好ましい。このように、第１結像光学系において凹面反射鏡が形成する往復光路中に負レンズを配置することにより、ペッツバール条件を容易に満足して像面湾曲を良好に補正することが可能になるとともに、色収差も良好に補正することが可能になる。
【００２６】
また、往復光路中の負レンズは瞳位置近傍に配置されることが望ましいが、第１結像の瞳径をできるだけ小さくする必要があるので負レンズの有効径も小さくなるため、当該負レンズではフルエンス（＝単位面積・単位パルスあたりのエネルギー量）が高くなり易い。したがって、石英を用いて当該負レンズを形成すると、レーザ光の照射を受けて体積収縮による局所的屈折率変化すなわちコンパクションが起こり易く、ひいては投影光学系の結像性能が低下する。
【００２７】
同様に、像面に近接して配置される境界レンズも有効径が小さく、フルエンスが高くなり易い。したがって、石英を用いて境界レンズを形成すると、コンパクションが起こり易く結像性能が低下する。本発明では、第１結像光学系において凹面反射鏡が形成する往復光路中に配置された負レンズ、および第２結像光学系において像面に近接して配置された境界レンズを蛍石で形成することにより、コンパクションに起因する結像性能の低下を回避することができる。
【００２８】
また、本発明では、次の条件式（１）を満足することが望ましい。なお、条件式（１）において、Ｆ１は第１レンズ群の焦点距離であり、Ｙ０は第２面上における最大像高である。
５＜Ｆ１／Ｙ０＜１５ （１）
【００２９】
条件式（１）の上限値を上回ると、第１結像の瞳径が大きくなりすぎて、上述したように光学部材同士の機械的干渉を避けることが困難になるので好ましくない。一方、条件式（１）の下限値を下回ると、反射鏡への入射光の角度の物体高による差（画角差）が大きく発生し、コマ収差や像面湾曲等の収差の補正が困難になるので好ましくない。なお、本発明の効果をさらに良好に発揮するには、条件式（１）の上限値を１３に設定し、その下限値を７に設定することがさらに好ましい。
【００３０】
また、本発明では、第１レンズ群が少なくとも２つの正レンズを有することが好ましい。この構成により、第１レンズ群の正屈折力を大きく設定して条件式（１）を容易に満足することができ、ひいてはコマ収差、歪曲収差、非点収差等を良好に補正することができる。
【００３１】
また、反射率が高く且つ耐久性に富んだ反射鏡を製造することは難しく、数多くの反射面を設けることは光量損失につながる。このため、本発明では、たとえば露光装置や露光方法に投影光学系を適用する場合、スループット向上の観点から、第２結像光学系は複数の透過部材のみにより構成された屈折光学系であることが好ましい。
【００３２】
また、蛍石は固有複屈折性を有する結晶材料であり、蛍石で形成された透過部材では特に２００ｎｍ以下の波長の光に対する複屈折の影響が大きい。このため、蛍石透過部材を含む光学系では、結晶軸方位の異なる蛍石透過部材を組み合わせて複屈折による結像性能の低下を抑える必要があるが、このような対策を講じても、複屈折による性能低下を完全に抑えることはできない。
【００３３】
さらに、蛍石では内部の屈折率分布が高周波成分を有することが知られており、この高周波成分を含む屈折率のばらつきがフレアの発生を招いて投影光学系の結像性能を低下させ易いため、蛍石の使用を可能な限り減らすことが好ましい。そこで、本発明では、蛍石の使用を可能な限り減らすために、屈折光学系である第２結像光学系を構成する透過部材のうち、７０％以上の透過部材が石英により形成されていることが好ましい。
【００３４】
また、本発明では、有効結像領域が円弧形状を有し、次の条件式（２）を満足することが望ましい。なお、条件式（２）において、Ｒは有効結像領域を規定する円弧の曲率半径の大きさであり、Ｙ０は上述したように第２面上における最大像高である。
１．０５＜Ｒ／Ｙ０＜１２ （２）
【００３５】
本発明では、光軸を含まない円弧形状の有効結像領域を有することにより、光学系の大型化を回避しつつ光路分離を容易に行うことができる。しかしながら、たとえば露光装置や露光方法に適用する場合、マスク上において円弧形状の照明領域を均一に照明することは難しい。したがって、円弧形状の領域を含む矩形状の領域に対応する矩形状の照明光束を、円弧形状の開口部（光透過部）を有する視野絞りにより制限する手法を採用することになる。この場合、視野絞りにおける光量損失を抑えるには、有効結像領域を規定する円弧の曲率半径の大きさＲができるだけ大きいことが必要である。
【００３６】
すなわち、条件式（２）の下限値を下回ると、曲率半径の大きさＲが小さくなりすぎて、視野絞りにおける光束損失が大きくなり、この照明効率の低下によりスループットが低下するので好ましくない。一方、条件式（２）の上限値を上回ると、曲率半径の大きさＲが大きくなりすぎて、スキャン露光時のオーバーラン長の短縮化のために所要幅の有効結像領域を確保しようとすると必要な収差補正領域が大きくなるため、光学系が大型化するので好ましくない。なお、本発明の効果をさらに良好に発揮するには、条件式（２）の上限値を８に設定し、その下限値を１．０７に設定することがさらに好ましい。
【００３７】
なお、上述タイプの反射屈折型の投影光学系では、像面（第２面）との間の光路を液体のような媒質で満たさない場合であっても、条件式（２）を満足することにより、照明効率の低下によるスループットの低下や必要な収差補正領域の増大による光学系の大型化を回避することができる。また、本発明の投影光学系を露光装置や露光方法に適用する場合、境界レンズと像面との間に満たされる媒質（液体など）の透過率や、レーザ光の狭帯化の程度などを考慮すると、たとえばＡｒＦレーザ光（波長１９３．３０６ｎｍ）を露光光として用いることが好ましい。
【００３８】
本発明の実施形態を、添付図面に基づいて説明する。
図１は、本発明の実施形態にかかる露光装置の構成を概略的に示す図である。なお、図１において、投影光学系ＰＬの光軸ＡＸに平行にＺ軸を、光軸ＡＸに垂直な面内において図１の紙面に平行にＹ軸を、図１の紙面に垂直にＸ軸をそれぞれ設定している。
【００３９】
図示の露光装置は、紫外領域の照明光を供給するための光源１００として、ＡｒＦエキシマレーザ光源を備えている。光源１００から射出された光は、照明光学系ＩＬを介して、所定のパターンが形成されたレチクルＲを重畳的に照明する。なお、光源１００と照明光学系ＩＬとの間の光路はケーシング（不図示）で密封されており、光源１００から照明光学系ＩＬ中の最もレチクル側の光学部材までの空間は、露光光の吸収率が低い気体であるヘリウムガスや窒素などの不活性ガスで置換されているか、あるいはほぼ真空状態に保持されている。
【００４０】
レチクルＲは、レチクルホルダＲＨを介して、レチクルステージＲＳ上においてＸＹ平面に平行に保持されている。レチクルＲには転写すべきパターンが形成されており、光軸ＡＸを含むことなくＸ方向に延びる円弧形状のパターン領域が照明される。レチクルステージＲＳは、図示を省略した駆動系の作用により、レチクル面（すなわちＸＹ平面）に沿って二次元的に移動可能であり、その位置座標はレチクル移動鏡ＲＭを用いた干渉計ＲＩＦによって計測され且つ位置制御されるように構成されている。レチクルＲに形成されたパターンからの光は、投影光学系ＰＬを介して、感光性基板であるウェハＷ上にレチクルパターン像を形成する。
【００４１】
ウェハＷは、ウェハホルダテーブルＷＴを介して、ウェハステージＷＳ上においてＸＹ平面に平行に保持されている。そして、レチクルＲ上での円弧形状の照明領域に光学的に対応するように、ウェハＷ上においても光軸ＡＸを含むことなくＸ方向に延びる円弧形状の静止露光領域（すなわち実効露光領域：投影光学系ＰＬの有効結像領域）にパターン像が形成される。ウェハステージＷＳは、図示を省略した駆動系の作用によりウェハ面（すなわちＸＹ平面）に沿って二次元的に移動可能であり、その位置座標はウェハ移動鏡ＷＭを用いた干渉計ＷＩＦによって計測され且つ位置制御されるように構成されている。
【００４２】
図２は、本実施形態においてウェハ上に形成される円弧形状の実効露光領域と光軸との位置関係を示す図である。本実施形態では、図２に示すように、収差が良好に補正された領域すなわち収差補正領域ＡＲが、光軸ＡＸを中心とした外径（半径）Ｒｏの円と、内径（半径）Ｒｉの円と、距離Ｈだけ間隔を隔てたＹ方向に平行な２つの線分とにより円弧形状に規定されている。そして、実効露光領域（有効結像領域）ＥＲは、円弧形状の収差補正領域ＡＲにほぼ内接するように、曲率半径の大きさがＲでＹ方向に間隔を隔てた２つの円弧と、距離Ｈだけ間隔を隔てたＹ方向に平行な長さＤの２つの線分とにより円弧形状に設定されている。
【００４３】
こうして、投影光学系ＰＬが有するすべての有効結像領域ＥＲは、光軸ＡＸから外れた領域に存在している。そして、円弧形状の実効露光領域ＥＲのＸ方向に沿った寸法はＨであり、Ｙ方向に沿った寸法はＤである。したがって、図示を省略したが、レチクルＲ上には、円弧形状の実効露光領域ＥＲに光学的に対応した大きさおよび形状を有する円弧形状の照明領域（すなわち実効照明領域）が、光軸ＡＸを含むことなく形成されていることになる。
【００４４】
また、本実施形態の露光装置では、投影光学系ＰＬを構成する光学部材のうち最もレチクル側に配置された光学部材（各実施例ではレンズＬ１１）と境界レンズＬｂ（各実施例ではレンズＬ２１７）との間で投影光学系ＰＬの内部が気密状態を保つように構成され、投影光学系ＰＬの内部の気体はヘリウムガスや窒素などの不活性ガスで置換されているか、あるいはほぼ真空状態に保持されている。さらに、照明光学系ＩＬと投影光学系ＰＬとの間の狭い光路には、レチクルＲおよびレチクルステージＲＳなどが配置されているが、レチクルＲおよびレチクルステージＲＳなどを密封包囲するケーシング（不図示）の内部に窒素やヘリウムガスなどの不活性ガスが充填されているか、あるいはほぼ真空状態に保持されている。
【００４５】
図３は、本実施形態の第１実施例における境界レンズとウェハとの間の構成を概略的に示す図である。図３を参照すると、第１実施例では、境界レンズＬｂは、レチクル側（第１面側）に向かって凸面を有する。換言すれば、境界レンズＬｂのレチクル側の面Ｓｂは、正の屈折力を有する。そして、境界レンズＬｂとウェハＷとの間の光路は、１．１よりも大きい屈折率を有する媒質Ｌｍで満たされている。第１実施例では、媒質Ｌｍとして、脱イオン水を用いている。
【００４６】
図４は、本実施形態の第２実施例における境界レンズとウェハとの間の構成を概略的に示す図である。図４を参照すると、第２実施例においても第１実施例と同様に、境界レンズＬｂはレチクル側に向かって凸面を有し、そのレチクル側の面Ｓｂは正の屈折力を有する。しかしながら、第２実施例では、第１実施例とは異なり、境界レンズＬｂとウェハＷとの間の光路中に平行平面板Ｌｐが挿脱自在に配置され、境界レンズＬｂと平行平面板Ｌｐとの間の光路および平行平面板ＬｐとウェハＷとの間の光路は、１．１よりも大きい屈折率を有する媒質Ｌｍで満たされている。第２実施例においても第１実施例と同様に、媒質Ｌｍとして脱イオン水を用いている。
【００４７】
なお、投影光学系ＰＬに対してウェハＷを相対移動させつつ走査露光を行うステップ・アンド・スキャン方式の露光装置において、走査露光の開始から終了まで投影光学系ＰＬの境界レンズＬｂとウェハＷとの間の光路中に液体媒質Ｌｍを満たし続けるには、たとえば国際公開番号ＷＯ９９／４９５０４号公報に開示された技術や、特開平１０−３０３１１４号公報に開示された技術などを用いることができる。
【００４８】
国際公開番号ＷＯ９９／４９５０４号公報に開示された技術では、液体供給装置から供給管および排出ノズルを介して所定の温度に調整された液体（媒質Ｌｍ）を境界レンズＬｂとウェハＷとの間の光路を満たすように供給し、液体供給装置により回収管および流入ノズルを介してウェハＷ上から液体を回収する。液体の供給量および回収量は、投影光学系ＰＬに対するウェハＷの相対移動速度に応じて調整されることになる。
【００４９】
一方、特開平１０−３０３１１４号公報に開示された技術では、液体（媒質Ｌｍ）を収容することができるようにウェハホルダテーブルＷＴを容器状に構成し、その内底部の中央において（液体中において）ウェハＷを真空吸着により位置決め保持する。また、投影光学系ＰＬの鏡筒先端部が液体中に達し、ひいては境界レンズＬｂのウェハ側の光学面が液体中に達するように構成する。
【００５０】
このように、光源１００からウェハＷまでの光路の全体に亘って、露光光がほとんど吸収されることのない雰囲気が形成されている。また、上述したように、レチクルＲ上の照明領域およびウェハＷ上の露光領域（すなわち実効露光領域ＥＲ）は、Ｘ方向に延びる円弧形状である。したがって、駆動系および干渉計（ＲＩＦ、ＷＩＦ）などを用いてレチクルＲおよびウェハＷの位置制御を行いながら、Ｙ方向に沿ってレチクルステージＲＳとウェハステージＷＳとを、ひいてはレチクルＲとウェハＷとを同期的に移動（走査）させることにより、ウェハＷ上には実効露光領域ＥＲのＸ方向寸法Ｈに等しい幅を有し且つウェハＷの走査量（移動量）に応じた長さを有する露光領域に対してレチクルパターンが走査露光される。
【００５１】
各実施例において、非球面は、光軸に垂直な方向の高さをｙとし、非球面の頂点における接平面から高さｙにおける非球面上の位置までの光軸に沿った距離（サグ量）をｚとし、頂点曲率半径をｒとし、円錐係数をκとし、ｎ次の非球面係数をＣｎとしたとき、以下の数式（ａ）で表される。各実施例において、非球面形状に形成されたレンズ面には面番号の右側に＊印を付している。
ｚ＝（ｙ２／ｒ）／［１＋｛１−（１＋κ）・ｙ２／ｒ２｝１／２］＋Ｃ４・ｙ４＋Ｃ６・ｙ６＋Ｃ８・ｙ８＋Ｃ１０・ｙ１０ ＋Ｃ１２・ｙ１２＋Ｃ１４・ｙ１４ （ａ）
【００５２】
また、各実施例において、投影光学系ＰＬは、物体面（第１面）に配置されたレチクルＲのパターンの中間像を形成するための第１結像光学系Ｇ１と、中間像からの光に基づいて像面（第２面）に配置されたウェハＷ上にレチクルパターンの縮小像を形成するための第２結像光学系Ｇ２とにより構成されている。ここで、第１結像光学系Ｇ１は第１凹面反射鏡ＣＭ１と第２凹面反射鏡ＣＭ２とを含む反射屈折光学系であり、第２結像光学系Ｇ２は屈折光学系である。
【００５３】
［第１実施例］
図５は、本実施形態の第１実施例にかかる投影光学系のレンズ構成を示す図である。図５を参照すると、第１実施例にかかる投影光学系ＰＬにおいて、第１結像光学系Ｇ１は、光の進行方向に沿ってレチクル側から順に、ウェハ側に非球面形状の凸面を向けた両凸レンズＬ１１と、両凸レンズＬ１２と、レチクル側に非球面形状の凹面を向けた負メニスカスレンズＬ１３と、第１凹面反射鏡ＣＭ１とを備えている。また、第１結像光学系Ｇ１では、第１凹面反射鏡ＣＭ１で反射され且つ負メニスカスレンズＬ１３を介した光を第２結像光学系Ｇ２に向かって反射するための第２凹面反射鏡ＣＭ２の反射面が、両凸レンズＬ１２と負メニスカスレンズＬ１３との間において光軸ＡＸを含まない領域に配置されている。したがって、両凸レンズＬ１１および両凸レンズＬ１２が、正の屈折力を有する第１レンズ群を構成している。また、第１凹面反射鏡ＣＭ１が、第１結像光学系Ｇ１の瞳面の近傍に配置された凹面反射鏡を構成している。
【００５４】
一方、第２結像光学系Ｇ２は、光の進行方向に沿ってレチクル側から順に、レチクル側に凹面を向けた正メニスカスレンズＬ２１と、両凸レンズＬ２２と、ウェハ側に非球面形状の凹面を向けた正メニスカスレンズＬ２３と、レチクル側に非球面形状の凸面を向けた負メニスカスレンズＬ２４と、レチクル側に凸面を向けた負メニスカスレンズＬ２５と、レチクル側に非球面形状の凹面を向けた両凹レンズＬ２６と、レチクル側に凹面を向けた正メニスカスレンズＬ２７と、レチクル側に非球面形状の凸面を向けた負メニスカスレンズＬ２８と、両凸レンズＬ２９と、両凸レンズＬ２１０と、レチクル側に凸面を向けた正メニスカスレンズＬ２１１と、開口絞りＡＳと、レチクル側に凹面を向けた正メニスカスレンズＬ２１２と、両凸レンズＬ２１３と、ウェハ側に非球面形状の凹面を向けた正メニスカスレンズＬ２１４と、レチクルに凸面を向けた正メニスカスレンズＬ２１５と、ウェハ側に非球面形状の凹面を向けた正メニスカスレンズＬ２１６と、ウェハ側に平面を向けた平凸レンズＬ２１７（境界レンズＬｂ）とにより構成されている。
【００５５】
第１実施例では、投影光学系ＰＬを構成するすべての透過部材（レンズ）およびパワーを有するすべての反射部材（第１凹面反射鏡ＣＭ１，第２凹面反射鏡ＣＭ２）は単一の光軸ＡＸに沿って配置されている。すなわち、第２結像光学系Ｇ２を構成する透過部材のうち、１００％の透過部材が石英により形成されている。そして、境界レンズＬｂとしての平凸レンズＬ２１７とウェハＷとの間の光路には、脱イオン水からなる媒質Ｌｍが満たされている。第１実施例では、レチクルＲからの光が、レンズＬ１１〜Ｌ１３を介して、第１凹面反射鏡ＣＭ１に入射する。第１凹面反射鏡ＣＭ１で反射された光は、レンズＬ１３および第２凹面反射鏡ＣＭ２を介して、第１凹面反射鏡ＣＭ１の近傍にレチクルＲの中間像を形成する。第２凹面反射鏡ＣＭ２で反射された光は、レンズＬ２１〜Ｌ２１７（Ｌｂ）を介して、ウェハＷ上にレチクルＲの縮小像を形成する。
【００５６】
第１実施例では、投影光学系ＰＬを構成するすべての透過部材（レンズ）が、石英（ＳｉＯ２）により形成されている。露光光であるＡｒＦエキシマレーザ光の発振中心波長は、１９３．３０６ｎｍであり、１９３．３０６ｎｍ付近において石英の屈折率は、＋１ｐｍの波長変化あたり−１．５９１×１０−６の割合で変化し、−１ｐｍの波長変化あたり＋１．５９１×１０−６の割合で変化する。換言すると、１９３．３０６ｎｍ付近において、石英の屈折率の分散（ｄｎ／ｄλ）は、−１．５９１×１０−６／ｐｍである。また、１９３．３０６ｎｍ付近において脱イオン水の屈折率は、＋１ｐｍの波長変化あたり−２．６×１０−６の割合で変化し、−１ｐｍの波長変化あたり＋２．６×１０−６の割合で変化する。換言すると、１９３．３０６ｎｍ付近において、脱イオン水の屈折率の分散（ｄｎ／ｄλ）は、−２．６×１０−６／ｐｍである。
【００５７】
こうして、第１実施例において、中心波長１９３．３０６ｎｍに対する石英の屈折率は１．５６０３２６１であり、１９３．３０６ｎｍ＋０．１ｐｍ＝１９３．３０６１ｎｍに対する石英の屈折率は１．５６０３２５９４１であり、１９３．３０６ｎｍ−０．１ｐｍ＝１９３．３０５９ｎｍに対する石英の屈折率は１．５６０３２６２５９である。また、中心波長１９３．３０６ｎｍに対する脱イオン水の屈折率は１．４７であり、１９３．３０６ｎｍ＋０．１ｐｍ＝１９３．３０６１ｎｍに対する脱イオン水の屈折率は１．４６９９９９７４であり、１９３．３０６ｎｍ−０．１ｐｍ＝１９３．３０５９ｎｍに対する脱イオン水の屈折率は１．４７００００２６である。
【００５８】
次の表（１）に、第１実施例にかかる投影光学系ＰＬの諸元の値を掲げる。表（１）において、λは露光光の中心波長を、βは投影倍率（全系の結像倍率）を、ＮＡは像側（ウェハ側）開口数を、ＲｏおよびＲｉは収差補正領域ＡＲの外半径および内半径を、ＨおよびＤは実効露光領域ＥＲのＸ方向寸法およびＹ方向寸法を、Ｒは円弧形状の実効露光領域ＥＲ（有効結像領域）を規定する円弧の曲率半径の大きさを、Ｙ０は最大像高をそれぞれ表している。また、面番号は物体面（第１面）であるレチクル面から像面（第２面）であるウェハ面への光線の進行する方向に沿ったレチクル側からの面の順序を、ｒは各面の曲率半径（非球面の場合には頂点曲率半径：ｍｍ）を、ｄは各面の軸上間隔すなわち面間隔（ｍｍ）を、ｎは中心波長に対する屈折率をそれぞれ示している。
【００５９】
なお、面間隔ｄは、反射される度にその符号を変えるものとする。したがって、面間隔ｄの符号は、第１凹面反射鏡ＣＭ１から第２凹面反射鏡ＣＭ２までの光路中では負とし、その他の光路中では正としている。そして、光の入射方向にかかわらず、レチクル側に向かって凸面の曲率半径を正とし、凹面の曲率半径を負としている。なお、表（１）における表記は、以降の表（２）においても同様である。
【００６０】
【表１】

Figure 2004333761
Figure 2004333761
Figure 2004333761
Figure 2004333761
【００６１】
図６は、第１実施例における横収差を示す図である。収差図において、Ｙは像高を、実線は中心波長１９３．３０６０ｎｍを、破線は１９３．３０６ｎｍ＋０．１ｐｍ＝１９３．３０６１ｎｍを、一点鎖線は１９３．３０６ｎｍ−０．１ｐｍ＝１９３．３０５９ｎｍをそれぞれ示している。なお、図６における表記は、以降の図８においても同様である。図６の収差図から明らかなように、第１実施例では、非常に大きな像側開口数（ＮＡ＝１．０４）および比較的大きな実効露光領域ＥＲを確保しているにもかかわらず、波長幅が１９３．３０６ｎｍ±０．１ｐｍの露光光に対して色収差が良好に補正されていることがわかる。
【００６２】
［第２実施例］
図７は、本実施形態の第２実施例にかかる投影光学系のレンズ構成を示す図である。図７を参照すると、第２実施例にかかる投影光学系ＰＬにおいて、第１結像光学系Ｇ１は、光の進行方向に沿ってレチクル側から順に、ウェハ側に非球面形状の凸面を向けた両凸レンズＬ１１と、両凸レンズＬ１２と、レチクル側に非球面形状の凹面を向けた負メニスカスレンズＬ１３と、第１凹面反射鏡ＣＭ１とを備えている。また、第１結像光学系Ｇ１では、第１凹面反射鏡ＣＭ１で反射され且つ負メニスカスレンズＬ１３を介した光を第２結像光学系Ｇ２に向かって反射するための第２凹面反射鏡ＣＭ２の反射面が、両凸レンズＬ１２と負メニスカスレンズＬ１３との間において光軸ＡＸを含まない領域に配置されている。したがって、両凸レンズＬ１１および両凸レンズＬ１２が、正の屈折力を有する第１レンズ群を構成している。また、第１凹面反射鏡ＣＭ１が、第１結像光学系Ｇ１の瞳面の近傍に配置された凹面反射鏡を構成している。
【００６３】
一方、第２結像光学系Ｇ２は、光の進行方向に沿ってレチクル側から順に、レチクル側に凹面を向けた正メニスカスレンズＬ２１と、両凸レンズＬ２２と、ウェハ側に非球面形状の凹面を向けた正メニスカスレンズＬ２３と、レチクル側に非球面形状の凸面を向けた負メニスカスレンズＬ２４と、レチクル側に凸面を向けた負メニスカスレンズＬ２５と、レチクル側に非球面形状の凹面を向けた両凹レンズＬ２６と、レチクル側に凹面を向けた正メニスカスレンズＬ２７と、レチクル側に非球面形状の凸面を向けた負メニスカスレンズＬ２８と、両凸レンズＬ２９と、両凸レンズＬ２１０と、レチクル側に凸面を向けた正メニスカスレンズＬ２１１と、開口絞りＡＳと、レチクル側に凹面を向けた正メニスカスレンズＬ２１２と、両凸レンズＬ２１３と、ウェハ側に非球面形状の凹面を向けた正メニスカスレンズＬ２１４と、レチクルに凸面を向けた正メニスカスレンズＬ２１５と、ウェハ側に非球面形状の凹面を向けた正メニスカスレンズＬ２１６と、ウェハ側に平面を向けた平凸レンズＬ２１７（境界レンズＬｂ）とにより構成されている。
【００６４】
第２実施例では、境界レンズＬｂとしての平凸レンズＬ２１７とウェハＷとの間の光路中に、平行平面板Ｌｐが配置されている。そして、境界レンズＬｂと平行平面板Ｌｐとの間の光路および平行平面板ＬｐとウェハＷとの間の光路には、脱イオン水からなる媒質Ｌｍが満たされている。また、第２実施例では、投影光学系ＰＬを構成する透過部材（レンズ）が、石英または蛍石（ＣａＦ２）により形成されている。具体的には、レンズＬ１３、レンズＬ２１６およびレンズＬ２１７（Ｌｂ）が蛍石により形成され、その他のレンズおよび平行平面板Ｌｐが石英により形成されている。すなわち、第２結像光学系Ｇ２を構成する透過部材のうち、約８８％の透過部材が石英により形成されている。
【００６５】
さらに、第２実施例では、投影光学系ＰＬを構成するすべての透過部材（レンズ，平行平面板）およびパワーを有するすべての反射部材（第１凹面反射鏡ＣＭ１，第２凹面反射鏡ＣＭ２）は単一の光軸ＡＸに沿って配置されている。こうして、第２実施例では、レチクルＲからの光が、レンズＬ１１〜Ｌ１３を介して、第１凹面反射鏡ＣＭ１に入射する。第１凹面反射鏡ＣＭ１で反射された光は、レンズＬ１３および第２凹面反射鏡ＣＭ２を介して、第１凹面反射鏡ＣＭ１の近傍にレチクルＲの中間像を形成する。第２凹面反射鏡ＣＭ２で反射された光は、レンズＬ２１〜Ｌ２１７（Ｌｂ）および平行平面板Ｌｐを介して、ウェハＷ上にレチクルＲの縮小像を形成する。
【００６６】
第２実施例では、露光光であるＡｒＦエキシマレーザ光の発振中心波長は、１９３．３０６ｎｍであり、１９３．３０６ｎｍ付近において石英の屈折率は、＋１ｐｍの波長変化あたり−１．５９１×１０−６の割合で変化し、−１ｐｍの波長変化あたり＋１．５９１×１０−６の割合で変化する。換言すると、１９３．３０６ｎｍ付近において、石英の屈折率の分散（ｄｎ／ｄλ）は、−１．５９１×１０−６／ｐｍである。また、１９３．３０６ｎｍ付近において蛍石の屈折率は、＋１ｐｍの波長変化あたり−０．９８０×１０−６の割合で変化し、−１ｐｍの波長変化あたり＋０．９８０×１０−６の割合で変化する。換言すると、１９３．３０６ｎｍ付近において、蛍石の屈折率の分散（ｄｎ／ｄλ）は、−０．９８０×１０−６／ｐｍである。
【００６７】
さらに、１９３．３０６ｎｍ付近において脱イオン水の屈折率は、＋１ｐｍの波長変化あたり−２．６×１０−６の割合で変化し、−１ｐｍの波長変化あたり＋２．６×１０−６の割合で変化する。換言すると、１９３．３０６ｎｍ付近において、脱イオン水の屈折率の分散（ｄｎ／ｄλ）は、−２．６×１０−６／ｐｍである。こうして、第２実施例において、中心波長１９３．３０６ｎｍに対する石英の屈折率は１．５６０３２６１であり、１９３．３０６ｎｍ＋０．１ｐｍ＝１９３．３０６１ｎｍに対する石英の屈折率は１．５６０３２５９４１であり、１９３．３０６ｎｍ−０．１ｐｍ＝１９３．３０５９ｎｍに対する石英の屈折率は１．５６０３２６２５９である。
【００６８】
また、中心波長１９３．３０６ｎｍに対する蛍石の屈折率は１．５０１４５４８であり、１９３．３０６ｎｍ＋０．１ｐｍ＝１９３．３０６１ｎｍに対する蛍石の屈折率は１．５０１４５４７０２であり、１９３．３０６ｎｍ−０．１ｐｍ＝１９３．３０５９ｎｍに対する蛍石の屈折率は１．５０１４５４８９８である。さらに、中心波長１９３．３０６ｎｍに対する脱イオン水の屈折率は１．４７であり、１９３．３０６ｎｍ＋０．１ｐｍ＝１９３．３０６１ｎｍに対する脱イオン水の屈折率は１．４６９９９９７４であり、１９３．３０６ｎｍ−０．１ｐｍ＝１９３．３０５９ｎｍに対する脱イオン水の屈折率は１．４７００００２６である。次の表（２）に、第２実施例にかかる投影光学系ＰＬの諸元の値を掲げる。
【００６９】
【表２】
Figure 2004333761
Figure 2004333761
Figure 2004333761
Figure 2004333761
Figure 2004333761
【００７０】
図８は、第２実施例における横収差を示す図である。図８の収差図から明らかなように、第２実施例においても第１実施例と同様に、非常に大きな像側開口数（ＮＡ＝１．０４）および比較的大きな実効露光領域ＥＲを確保しているにもかかわらず、波長幅が１９３．３０６ｎｍ±０．１ｐｍの露光光に対して色収差が良好に補正されていることがわかる。
【００７１】
こうして、各実施例では、波長が１９３．３０６ｎｍのＡｒＦエキシマレーザ光に対して、１．０４の高い像側開口数を確保するとともに、２６．０ｍｍ×４．０ｍｍの円弧形状の実効露光領域（静止露光領域）を確保することができ、たとえば２６ｍｍ×３３ｍｍの矩形状の露光領域内に回路パターンを高解像度で走査露光することができる。
【００７２】
上述の実施形態の露光装置では、照明装置によってレチクル（マスク）を照明し（照明工程）、投影光学系を用いてマスクに形成された転写用のパターンを感光性基板に露光する（露光工程）ことにより、マイクロデバイス（半導体素子、撮像素子、液晶表示素子、薄膜磁気ヘッド等）を製造することができる。以下、本実施形態の露光装置を用いて感光性基板としてのウェハ等に所定の回路パターンを形成することによって、マイクロデバイスとしての半導体デバイスを得る際の手法の一例につき図９のフローチャートを参照して説明する。
【００７３】
先ず、図９のステップ３０１において、１ロットのウェハ上に金属膜が蒸着される。次のステップ３０２において、そのｌロットのウェハ上の金属膜上にフォトレジストが塗布される。その後、ステップ３０３において、本実施形態の露光装置を用いて、マスク上のパターンの像がその投影光学系を介して、その１ロットのウェハ上の各ショット領域に順次露光転写される。その後、ステップ３０４において、その１ロットのウェハ上のフォトレジストの現像が行われた後、ステップ３０５において、その１ロットのウェハ上でレジストパターンをマスクとしてエッチングを行うことによって、マスク上のパターンに対応する回路パターンが、各ウェハ上の各ショット領域に形成される。
【００７４】
その後、更に上のレイヤの回路パターンの形成等を行うことによって、半導体素子等のデバイスが製造される。上述の半導体デバイス製造方法によれば、極めて微細な回路パターンを有する半導体デバイスをスループット良く得ることができる。なお、ステップ３０１〜ステップ３０５では、ウェハ上に金属を蒸着し、その金属膜上にレジストを塗布、そして露光、現像、エッチングの各工程を行っているが、これらの工程に先立って、ウェハ上にシリコンの酸化膜を形成後、そのシリコンの酸化膜上にレジストを塗布、そして露光、現像、エッチング等の各工程を行っても良いことはいうまでもない。
【００７５】
また、本実施形態の露光装置では、プレート（ガラス基板）上に所定のパターン（回路パターン、電極パターン等）を形成することによって、マイクロデバイスとしての液晶表示素子を得ることもできる。以下、図１０のフローチャートを参照して、このときの手法の一例につき説明する。図１０において、パターン形成工程４０１では、本実施形態の露光装置を用いてマスクのパターンを感光性基板（レジストが塗布されたガラス基板等）に転写露光する、所謂光リソグラフィ工程が実行される。この光リソグラフィー工程によって、感光性基板上には多数の電極等を含む所定パターンが形成される。その後、露光された基板は、現像工程、エッチング工程、レジスト剥離工程等の各工程を経ることによって、基板上に所定のパターンが形成され、次のカラーフィルター形成工程４０２へ移行する。
【００７６】
次に、カラーフィルター形成工程４０２では、Ｒ（Ｒｅｄ）、Ｇ（Ｇｒｅｅｎ）、Ｂ（Ｂｌｕｅ）に対応した３つのドットの組がマトリックス状に多数配列されたり、またはＲ、Ｇ、Ｂの３本のストライプのフィルターの組を複数水平走査線方向に配列されたりしたカラーフィルターを形成する。そして、カラーフィルター形成工程４０２の後に、セル組み立て工程４０３が実行される。セル組み立て工程４０３では、パターン形成工程４０１にて得られた所定パターンを有する基板、およびカラーフィルター形成工程４０２にて得られたカラーフィルター等を用いて液晶パネル（液晶セル）を組み立てる。セル組み立て工程４０３では、例えば、パターン形成工程４０１にて得られた所定パターンを有する基板とカラーフィルター形成工程４０２にて得られたカラーフィルターとの間に液晶を注入して、液晶パネル（液晶セル）を製造する。
【００７７】
その後、モジュール組み立て工程４０４にて、組み立てられた液晶パネル（液晶セル）の表示動作を行わせる電気回路、バックライト等の各部品を取り付けて液晶表示素子として完成させる。上述の液晶表示素子の製造方法によれば、極めて微細な回路パターンを有する液晶表示素子をスループット良く得ることができる。
【００７８】
なお、上述の実施形態では、ＡｒＦエキシマレーザ光源を用いているが、これに限定されることなく、たとえばＦ２ レーザ光源のような他の適当な光源を用いることもできる。さらに、上述の実施形態では、露光装置に搭載される投影光学系に対して本発明を適用しているが、これに限定されることなく、他の一般的な投影光学系に対して本発明を適用することもできる。
【００７９】
【発明の効果】
以上説明したように、本発明の投影光学系では、少なくとも２枚の反射鏡と第１面側の面が正の屈折力を有する境界レンズとを含み、すべての透過部材および反射部材が単一光軸に沿って配置され、光軸を含まない有効結像領域を有する構成において、境界レンズと第２面との間の光路が１．１よりも大きい屈折率を有する媒質で満たされている。その結果、本発明では、色収差や像面湾曲などの諸収差が良好に補正されて優れた結像性能を有し、光学面での反射損失を良好に抑えて大きな実効的な像側開口数を確保することのできる比較的小型の投影光学系を実現することができる。
【００８０】
したがって、本発明の投影光学系を用いる露光装置および露光方法では、優れた結像性能を有し且つ大きな実効的な像側開口数ひいては高い解像度を有する投影光学系を介して、微細なパターンを高精度に転写露光することができる。また、本発明の投影光学系を搭載した露光装置を用いて、高解像な投影光学系を介した高精度な投影露光により、良好なマイクロデバイスを製造することができる。
【図面の簡単な説明】
【図１】本発明の実施形態にかかる露光装置の構成を概略的に示す図である。
【図２】本実施形態においてウェハ上に形成される円弧形状の実効露光領域と光軸との位置関係を示す図である。
【図３】本実施形態の第１実施例における境界レンズとウェハとの間の構成を概略的に示す図である。
【図４】本実施形態の第２実施例における境界レンズとウェハとの間の構成を概略的に示す図である。
【図５】本実施形態の第１実施例にかかる投影光学系のレンズ構成を示す図である。
【図６】第１実施例における横収差を示す図である。
【図７】本実施形態の第２実施例にかかる投影光学系のレンズ構成を示す図である。
【図８】第２実施例における横収差を示す図である。
【図９】マイクロデバイスとしての半導体デバイスを得る際の手法のフローチャートである。
【図１０】マイクロデバイスとしての液晶表示素子を得る際の手法のフローチャートである。
【符号の説明】
Ｌｂ 境界レンズ
Ｌｐ 平行平面板
Ｌｍ 媒質（脱イオン水）
Ｇ１ 第１結像光学系
Ｇ２ 第２結像光学系
ＣＭ１，ＣＭ２ 凹面反射鏡
Ｌｉ 各レンズ成分
１００ レーザ光源
ＩＬ 照明光学系
Ｒ レチクル
ＲＳ レチクルステージ
ＰＬ 投影光学系
Ｗ ウェハ
ＷＳ ウェハステージ[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a catadioptric projection optical system, an exposure apparatus, and an exposure method, and particularly to a high-resolution reflection suitable for an exposure apparatus used when manufacturing a semiconductor element, a liquid crystal display element, and the like in a photolithography process. The present invention relates to a refraction type projection optical system.
[0002]
[Prior art]
In a photolithography process for manufacturing a semiconductor element or the like, projection exposure for exposing a pattern image of a mask (or reticle) onto a wafer (or a glass plate or the like) coated with a photoresist or the like via a projection optical system. The device is being used. As the degree of integration of semiconductor elements and the like increases, the resolving power (resolution) required for a projection optical system of a projection exposure apparatus has been increasing.
[0003]
As a result, in order to satisfy the requirement for the resolving power of the projection optical system, it is necessary to shorten the wavelength λ of the illumination light (exposure light) and increase the image-side numerical aperture NA of the projection optical system. Specifically, the resolution of the projection optical system is represented by k · λ / NA (k is a process coefficient). The image-side numerical aperture NA is n · sin θ, where n is the refractive index of a medium (normally, gas such as air) between the projection optical system and the image plane, and θ is the maximum incident angle on the image plane. Is represented by
[0004]
[Problems to be solved by the invention]
In this case, if an attempt is made to increase the numerical aperture NA by increasing the maximum incident angle θ, the angle of incidence on the image plane and the angle of emergence from the projection optical system increase, and the reflection loss on the optical surface increases. However, a large effective image-side numerical aperture cannot be secured. Therefore, a technique for increasing the numerical aperture NA by filling a medium such as a liquid having a high refractive index in an optical path between the projection optical system and the image plane is known.
[0005]
However, when this technique is applied to a normal refraction type projection optical system, it is difficult to satisfactorily correct chromatic aberration and satisfactorily correct Petzval's condition to correct field curvature, and it is also possible to avoid an increase in the size of the optical system. There was an inconvenience. In addition, there is an inconvenience that it is difficult to sufficiently suppress the reflection loss on the optical surface and to secure a large effective image-side numerical aperture.
[0006]
The present invention has been made in view of the above-described problems, and has excellent imaging performance in which various aberrations such as chromatic aberration and curvature of field are well corrected, and satisfactorily suppresses reflection loss on an optical surface. It is an object of the present invention to provide a relatively small projection optical system capable of securing a large effective image-side numerical aperture. Further, the present invention provides an exposure apparatus capable of transferring and exposing a fine pattern with high accuracy through a projection optical system having excellent imaging performance and a large effective image-side numerical aperture and thus a high resolution. And an exposure method.
[0007]
[Means for Solving the Problems]
In order to solve the above problem, according to a first embodiment of the present invention, in a catadioptric projection optical system that forms a reduced image of a first surface on a second surface,
The projection optical system includes at least two reflecting mirrors and a boundary lens whose first surface has a positive refractive power,
When the refractive index of the atmosphere in the optical path of the projection optical system is 1, the optical path between the boundary lens and the second surface is filled with a medium having a refractive index greater than 1.1, and All transmissive members and all reflective members with refractive power that make up the system are arranged along a single optical axis,
The projection optical system has an effective imaging region having a predetermined shape that does not include the optical axis. Preferably, the medium is a fluid. And it is more preferable that the medium is a liquid.
[0008]
According to a preferred aspect of the first aspect, the at least two reflectors have at least one concave reflector. Preferably, the projection optical system has an even number of reflecting mirrors. Further, it is preferable that the exit pupil of the projection optical system has no shielding area. Further, it is preferable that all effective imaging regions of the projection optical system exist in a region off the optical axis.
[0009]
According to a preferred aspect of the first aspect, the projection optical system includes at least two reflecting mirrors, and a first imaging optical system for forming an intermediate image of the first surface, and A second imaging optical system for forming a final image on the second surface based on the light beam. In this case, the first imaging optical system includes: a first lens group having a positive refractive power; a first reflecting mirror disposed in an optical path between the first lens group and the intermediate image; It is preferable to include a second reflecting mirror disposed in an optical path between the first reflecting mirror and the intermediate image.
[0010]
In this case, the first reflecting mirror is a concave reflecting mirror arranged near a pupil plane of the first imaging optical system, and at least one negative optical path is formed in a reciprocating optical path formed by the concave reflecting mirror. Preferably, a lens is provided. Further, in this case, it is preferable that the at least one negative lens and the boundary lens disposed in the reciprocating optical path are formed of fluorite.
[0011]
According to a preferred mode of the first embodiment, the focal length of the first lens group is F1, and the maximum image height on the second surface is Y. 0 Where 5 <F1 / Y 0 The condition of <15 is satisfied. Further, it is preferable that the first lens group has at least two positive lenses. Further, it is preferable that the second imaging optical system is a refracting optical system composed of only a plurality of transmission members. In this case, it is preferable that 70% or more of the transmission members constituting the second imaging optical system are formed of quartz.
[0012]
According to a preferred aspect of the first aspect, the effective imaging region has an arc shape, the radius of curvature of an arc defining the effective imaging region is R, and the maximum radius on the second surface is Image height is Y 0 1.05 <R / Y 0 The condition of <12 is satisfied.
[0013]
According to a second aspect of the present invention, in a catadioptric projection optical system that forms a reduced image of a first surface on a second surface,
An effective imaging region having at least two reflecting mirrors and a transmitting member, and having an arc shape not including an optical axis of the projection optical system,
The magnitude of the radius of curvature of the arc defining the effective imaging area is R, and the maximum image height on the second surface is Y 0 When
1.05 <R / Y 0 <12
And a projection optical system characterized by satisfying the following condition:
[0014]
According to a third aspect of the present invention, an illumination system for illuminating a mask set on the first surface, and an image of a pattern formed on the mask is formed on a photosensitive substrate set on the second surface. And a projection optical system according to the first or second aspect of the present invention.
[0015]
According to a preferred aspect of the third aspect, the mask and the photosensitive substrate are relatively moved along the predetermined direction with respect to the projection optical system, and the pattern of the mask is projected and exposed on the photosensitive substrate.
[0016]
In a fourth aspect of the present invention, the mask set on the first surface is illuminated, and a pattern formed on the mask is set on the second surface via the projection optical system of the first or second aspect. And exposing the photosensitive substrate to projection exposure.
[0017]
BEST MODE FOR CARRYING OUT THE INVENTION
In the projection optical system according to the present invention, the medium having the refractive index larger than 1.1 is interposed in the optical path between the boundary lens and the image plane (second plane), so that the image-side numerical aperture NA can be increased. I'm trying. By the way, M. Swikes and M.S. Mr. Rothschild published “Massachusetts Institute of Technology” in “SPIE2002 Microlithography”. And Fluorinert (Perfluoropolyethers: trade name of 3M Corporation in the United States), deionized water, and the like are listed as candidates.
[0018]
Further, in the projection optical system of the present invention, by applying a positive refractive power to the object-side (first surface side) optical surface of the boundary lens, the reflection loss on this optical surface is reduced, and as a result, a large effective effect is obtained. A high image-side numerical aperture can be secured. Thus, in an optical system having a medium such as a liquid on the image side as a medium having a high refractive index, the effective image-side numerical aperture can be increased to 1.0 or more, and the resolution can be increased. However, when the projection magnification is constant, the object-side numerical aperture increases with an increase in the image-side numerical aperture. Therefore, if the projection optical system is configured only with the refractive member, it is difficult to satisfy the Petzval condition, and Upsizing is inevitable.
[0019]
Therefore, in the projection optical system of the present invention, at least two reflecting mirrors are included, all transmitting members and all reflecting members having refractive power are arranged along a single optical axis, and include the optical axis. A catadioptric optical system of a type having an effective imaging area of a predetermined shape is employed. In this type of projection optical system, for example, the chromatic aberration can be satisfactorily corrected by the action of a concave reflecting mirror, and the Petzval condition can be easily satisfied, and the field curvature can be satisfactorily corrected. Is possible.
[0020]
In addition, in this type of projection optical system, since all transmitting members (such as lenses) and all reflecting members having power (such as concave reflecting mirrors) are arranged along a single optical axis, a plurality of optical members are required. This is preferable because the difficulty in manufacturing is significantly reduced as compared with the multi-axis configuration arranged along the optical axis. However, in the case of a single-axis configuration in which the optical members are arranged along a single optical axis, it tends to be difficult to satisfactorily correct chromatic aberration. However, as in the case of ArF laser light, the spectral width is narrowed. By using the laser light thus obtained, the problem of the chromatic aberration correction can be overcome.
[0021]
Thus, in the present invention, various aberrations such as chromatic aberration and curvature of field are excellently corrected, so that the present invention has an excellent imaging performance, and a large effective image-side numerical aperture by appropriately suppressing reflection loss on an optical surface. A relatively small projection optical system that can be secured can be realized. Therefore, in the exposure apparatus and the exposure method using the projection optical system of the present invention, a fine pattern can be formed through the projection optical system having excellent imaging performance and a large effective image-side numerical aperture and thus high resolution. Transfer exposure can be performed with high precision.
[0022]
In the present invention, the projection optical system may be configured to have an even number of reflecting mirrors, that is, configured so that an image of the first surface is formed on the second surface through an even number of reflections. preferable. With this configuration, for example, when applied to an exposure apparatus or an exposure method, a front surface image (erect image or inverted image) is formed on a wafer instead of a back surface image of a mask pattern. An ordinary mask (reticle) can be used similarly to the exposure apparatus to be mounted.
[0023]
By the way, in order to configure the catadioptric projection optical system of the present invention with a single optical axis, it is necessary to form an intermediate image near the pupil position, so that the projection optical system is preferably a re-imaging optical system. . To avoid mechanical interference between optical members while forming an intermediate image near the pupil position of the first image and performing optical path separation, the pupil of the first image must be formed even when the object-side numerical aperture becomes large. Since the diameter needs to be as small as possible, it is desirable that the first imaging optical system having a small numerical aperture is a catadioptric optical system.
[0024]
Therefore, in the present invention, a first imaging optical system including at least two reflecting mirrors for forming an intermediate image on the first surface, and forming a final image on the second surface based on a light beam from the intermediate image It is preferable that a projection optical system be configured with the second imaging optical system for performing the above. In this case, specifically, a first lens group having a positive refractive power, a first reflecting mirror arranged in an optical path between the first lens group and the intermediate image, and a first reflecting mirror and an intermediate image The first imaging optical system can be configured by using the second reflecting mirror disposed in the optical path between the first imaging optical system and the second imaging mirror.
[0025]
The first reflecting mirror is a concave reflecting mirror arranged near a pupil plane of the first imaging optical system, and at least one negative lens is disposed in a reciprocating optical path formed by the concave reflecting mirror. Is preferred. As described above, by disposing the negative lens in the reciprocating optical path formed by the concave reflecting mirror in the first imaging optical system, it becomes possible to easily satisfy the Petzval condition and satisfactorily correct the field curvature. At the same time, chromatic aberration can be corrected well.
[0026]
Further, it is desirable that the negative lens in the reciprocating optical path is disposed near the pupil position. However, since the pupil diameter of the first image needs to be made as small as possible, the effective diameter of the negative lens also becomes small. Fluence (= energy per unit area / unit pulse) is likely to increase. Therefore, when the negative lens is formed using quartz, a local change in refractive index due to volume shrinkage, that is, compaction, is likely to occur due to irradiation with laser light, and the imaging performance of the projection optical system is reduced.
[0027]
Similarly, the boundary lens disposed close to the image plane also has a small effective diameter and tends to have a high fluence. Therefore, if a boundary lens is formed using quartz, compaction is likely to occur and the imaging performance is reduced. In the present invention, the negative lens arranged in the reciprocating optical path formed by the concave reflecting mirror in the first imaging optical system and the boundary lens arranged close to the image plane in the second imaging optical system are made of fluorite. By forming, it is possible to avoid a reduction in imaging performance due to compaction.
[0028]
In the present invention, it is desirable that the following conditional expression (1) is satisfied. In conditional expression (1), F1 is the focal length of the first lens group, and Y1 0 Is the maximum image height on the second surface.
5 <F1 / Y 0 <15 (1)
[0029]
Exceeding the upper limit of conditional expression (1) is not preferable because the pupil diameter of the first image becomes too large and it becomes difficult to avoid mechanical interference between optical members as described above. On the other hand, when the value goes below the lower limit of conditional expression (1), a large difference (angle of view) of the angle of the incident light to the reflecting mirror due to the object height occurs, and it is difficult to correct aberrations such as coma and field curvature. Is not preferred. In order to further exert the effects of the present invention, it is more preferable to set the upper limit of conditional expression (1) to 13 and the lower limit thereof to 7.
[0030]
In the present invention, it is preferable that the first lens group has at least two positive lenses. With this configuration, the positive refracting power of the first lens group is set to be large, so that the conditional expression (1) can be easily satisfied. As a result, coma, distortion, astigmatism, and the like can be favorably corrected. .
[0031]
In addition, it is difficult to manufacture a reflecting mirror having high reflectivity and high durability, and providing a large number of reflecting surfaces leads to loss of light quantity. For this reason, in the present invention, for example, when a projection optical system is applied to an exposure apparatus or an exposure method, the second imaging optical system is a refractive optical system composed of only a plurality of transmission members from the viewpoint of improving throughput. Is preferred.
[0032]
Fluorite is a crystalline material having intrinsic birefringence, and a transmissive member made of fluorite has a large influence of birefringence particularly on light having a wavelength of 200 nm or less. For this reason, in an optical system including a fluorite transmitting member, it is necessary to suppress a decrease in imaging performance due to birefringence by combining fluorite transmitting members having different crystal axis orientations. Performance degradation due to refraction cannot be completely suppressed.
[0033]
Further, it is known that the internal refractive index distribution of fluorite has a high-frequency component, and a variation in the refractive index including the high-frequency component tends to cause a flare to easily deteriorate the imaging performance of the projection optical system. It is preferred to use as little fluorite as possible. Therefore, in the present invention, in order to reduce the use of fluorite as much as possible, 70% or more of the transmission members constituting the second imaging optical system, which is a refractive optical system, are formed of quartz. Is preferred.
[0034]
In the present invention, it is preferable that the effective imaging region has an arc shape and satisfies the following conditional expression (2). In the conditional expression (2), R is the size of the radius of curvature of the arc defining the effective imaging area, and Y 0 Is the maximum image height on the second surface as described above.
1.05 <R / Y 0 <12 (2)
[0035]
In the present invention, the provision of the arc-shaped effective imaging region not including the optical axis makes it possible to easily perform optical path separation while avoiding an increase in the size of the optical system. However, for example, when applied to an exposure apparatus or an exposure method, it is difficult to uniformly illuminate an arc-shaped illumination area on a mask. Therefore, a method of restricting a rectangular illumination light beam corresponding to a rectangular area including an arc-shaped area by a field stop having an arc-shaped opening (light transmitting section) is adopted. In this case, in order to suppress the light amount loss in the field stop, it is necessary that the radius R of the radius of curvature of the arc defining the effective image forming area is as large as possible.
[0036]
That is, when the value goes below the lower limit value of the conditional expression (2), the radius R of the curvature radius becomes too small, so that the luminous flux loss in the field stop increases, and the throughput decreases due to the decrease in the illumination efficiency, which is not preferable. On the other hand, if the value exceeds the upper limit value of the conditional expression (2), the radius of curvature R becomes too large, and an attempt is made to secure an effective image forming area having a required width in order to reduce the overrun length during scan exposure. Then, the necessary aberration correction area becomes large, and the size of the optical system becomes large, which is not preferable. In order to further exert the effects of the present invention, it is more preferable to set the upper limit of conditional expression (2) to 8 and the lower limit to 1.07.
[0037]
In the catadioptric projection optical system of the type described above, conditional expression (2) must be satisfied even if the optical path between the image plane (second plane) and the medium is not filled with a medium such as a liquid. Accordingly, it is possible to avoid a decrease in throughput due to a decrease in illumination efficiency and an increase in the size of the optical system due to an increase in a necessary aberration correction area. When the projection optical system of the present invention is applied to an exposure apparatus or an exposure method, the transmittance of a medium (liquid or the like) filled between the boundary lens and the image plane, the degree of narrowing of the laser beam, and the like are determined. Considering this, it is preferable to use, for example, ArF laser light (wavelength 193.306 nm) as exposure light.
[0038]
An embodiment of the present invention will be described with reference to the accompanying drawings.
FIG. 1 is a diagram schematically showing a configuration of an exposure apparatus according to an embodiment of the present invention. In FIG. 1, the Z axis is parallel to the optical axis AX of the projection optical system PL, the Y axis is parallel to the plane of FIG. 1 in a plane perpendicular to the optical axis AX, and the X axis is perpendicular to the plane of FIG. Are set respectively.
[0039]
The illustrated exposure apparatus includes an ArF excimer laser light source as a light source 100 for supplying illumination light in an ultraviolet region. The light emitted from the light source 100 illuminates the reticle R on which the predetermined pattern is formed in a superimposed manner via the illumination optical system IL. The optical path between the light source 100 and the illumination optical system IL is sealed by a casing (not shown), and the space from the light source 100 to the optical member closest to the reticle in the illumination optical system IL absorbs exposure light. The gas is replaced with an inert gas such as helium gas or nitrogen, which is a gas having a low rate, or is kept in a substantially vacuum state.
[0040]
The reticle R is held on the reticle stage RS in parallel with the XY plane via a reticle holder RH. A pattern to be transferred is formed on the reticle R, and an arc-shaped pattern region extending in the X direction without including the optical axis AX is illuminated. The reticle stage RS can be moved two-dimensionally along the reticle surface (that is, the XY plane) by the action of a drive system (not shown), and its position coordinates are measured by an interferometer RIF using a reticle moving mirror RM. And the position is controlled. Light from the pattern formed on the reticle R forms a reticle pattern image on the wafer W as a photosensitive substrate via the projection optical system PL.
[0041]
The wafer W is held on a wafer stage WS via a wafer holder table WT in parallel with the XY plane. Then, on the wafer W, an arc-shaped stationary exposure area extending in the X-direction without including the optical axis AX (ie, an effective exposure area: projection) so as to correspond optically to the arc-shaped illumination area on the reticle R. A pattern image is formed in the effective imaging area of the optical system PL). The wafer stage WS can be moved two-dimensionally along the wafer surface (that is, the XY plane) by the action of a drive system (not shown), and its position coordinates are measured by an interferometer WIF using a wafer moving mirror WM. In addition, the position is controlled.
[0042]
FIG. 2 is a diagram showing a positional relationship between an effective exposure area having an arc shape formed on a wafer and an optical axis in the present embodiment. In the present embodiment, as shown in FIG. 2, the region where the aberration is satisfactorily corrected, that is, the aberration correction region AR is a circle having an outer diameter (radius) Ro centered on the optical axis AX and a circle having an inner diameter (radius) Ri. An arc shape is defined by a circle and two line segments parallel to the Y direction separated by a distance H. The effective exposure area (effective image forming area) ER is substantially inscribed in the arc-shaped aberration correction area AR, and two arcs having a radius of curvature R and spaced in the Y direction, and a distance H. It is set in an arc shape by two line segments having a length D parallel to the Y direction and separated only by an interval.
[0043]
Thus, all the effective imaging regions ER of the projection optical system PL are located outside the optical axis AX. The dimension along the X direction of the arc-shaped effective exposure area ER is H, and the dimension along the Y direction is D. Therefore, although not shown, an arc-shaped illumination region (that is, an effective illumination region) having a size and a shape optically corresponding to the arc-shaped effective exposure region ER on the reticle R has an optical axis AX. It is formed without including.
[0044]
In the exposure apparatus of the present embodiment, the optical member (the lens L11 in each example) and the boundary lens Lb (the lens L217 in each example) which are arranged closest to the reticle among the optical members constituting the projection optical system PL. The interior of the projection optical system PL is configured so as to maintain an airtight state, and the gas inside the projection optical system PL is replaced with an inert gas such as helium gas or nitrogen, or is maintained in a substantially vacuum state. Have been. Further, a reticle R, a reticle stage RS, and the like are disposed in a narrow optical path between the illumination optical system IL and the projection optical system PL, but a casing (not shown) that hermetically surrounds the reticle R, the reticle stage RS, and the like. Is filled with an inert gas such as nitrogen or helium gas, or is maintained in a substantially vacuum state.
[0045]
FIG. 3 is a diagram schematically showing a configuration between the boundary lens and the wafer in the first example of the present embodiment. Referring to FIG. 3, in the first embodiment, the boundary lens Lb has a convex surface toward the reticle side (first surface side). In other words, the surface Sb on the reticle side of the boundary lens Lb has a positive refractive power. The optical path between the boundary lens Lb and the wafer W is filled with a medium Lm having a refractive index larger than 1.1. In the first embodiment, deionized water is used as the medium Lm.
[0046]
FIG. 4 is a diagram schematically showing a configuration between a boundary lens and a wafer in a second example of the present embodiment. Referring to FIG. 4, also in the second embodiment, similarly to the first embodiment, the boundary lens Lb has a convex surface toward the reticle side, and the reticle side surface Sb has a positive refractive power. However, in the second embodiment, unlike the first embodiment, the plane-parallel plate Lp is disposed in the optical path between the boundary lens Lb and the wafer W so as to be freely inserted into and removed from the boundary lens Lb and the plane-parallel plate Lp. And the optical path between the plane-parallel plate Lp and the wafer W are filled with a medium Lm having a refractive index greater than 1.1. In the second embodiment, as in the first embodiment, deionized water is used as the medium Lm.
[0047]
In a step-and-scan type exposure apparatus that performs scanning exposure while relatively moving the wafer W with respect to the projection optical system PL, the boundary lens Lb of the projection optical system PL and the wafer W In order to keep the liquid medium Lm filled in the optical path between them, for example, the technology disclosed in International Publication No. WO99 / 49504, the technology disclosed in Japanese Patent Application Laid-Open No. 10-303114, or the like can be used.
[0048]
In the technique disclosed in International Publication No. WO99 / 49504, a liquid (medium Lm) adjusted to a predetermined temperature from a liquid supply device through a supply pipe and a discharge nozzle is supplied between the boundary lens Lb and the wafer W. The liquid is supplied so as to fill the optical path, and the liquid is recovered from the wafer W through the recovery pipe and the inflow nozzle by the liquid supply device. The supply amount and the recovery amount of the liquid are adjusted according to the relative moving speed of the wafer W with respect to the projection optical system PL.
[0049]
On the other hand, in the technique disclosed in Japanese Patent Application Laid-Open No. H10-303114, the wafer holder table WT is formed in a container shape so that a liquid (medium Lm) can be accommodated, and at the center of the inner bottom (in the liquid). ) The wafer W is positioned and held by vacuum suction. The projection optical system PL is configured such that the distal end of the lens barrel reaches the liquid, and thus the optical surface of the boundary lens Lb on the wafer side reaches the liquid.
[0050]
Thus, an atmosphere in which the exposure light is hardly absorbed is formed over the entire optical path from the light source 100 to the wafer W. Further, as described above, the illumination area on the reticle R and the exposure area on the wafer W (that is, the effective exposure area ER) have an arc shape extending in the X direction. Therefore, while controlling the position of reticle R and wafer W using a drive system and an interferometer (RIF, WIF), etc., reticle stage RS and wafer stage WS, and thus reticle R and wafer W, are moved along the Y direction. Are synchronously moved (scanned) so that the exposure on the wafer W has a width equal to the X-direction dimension H of the effective exposure area ER and a length corresponding to the scanning amount (moving amount) of the wafer W. A reticle pattern is scanned and exposed to the area.
[0051]
In each embodiment, the height of the aspheric surface in the direction perpendicular to the optical axis is y, and the distance (sag amount) along the optical axis from the tangent plane at the vertex of the aspheric surface to a position on the aspheric surface at the height y ) Is z, the vertex radius of curvature is r, the cone coefficient is κ, and the nth order aspheric coefficient is C n Is represented by the following equation (a). In each embodiment, an asterisk is attached to the right side of the surface number for the lens surface formed in an aspherical shape.
z = (y 2 / R) / [1+ ｛1- (1 + κ) · y 2 / R 2 ｝ 1/2 ] + C 4 ・ Y 4 + C 6 ・ Y 6 + C 8 ・ Y 8 + C 10 ・ Y 10 + C 12 ・ Y 12 + C 14 ・ Y 14 (A)
[0052]
In each embodiment, the projection optical system PL includes a first imaging optical system G1 for forming an intermediate image of the pattern of the reticle R disposed on the object plane (first surface), and light from the intermediate image. And a second imaging optical system G2 for forming a reduced image of the reticle pattern on the wafer W arranged on the image plane (second surface) based on the above. Here, the first imaging optical system G1 is a catadioptric optical system including a first concave reflecting mirror CM1 and a second concave reflecting mirror CM2, and the second imaging optical system G2 is a refractive optical system.
[0053]
[First embodiment]
FIG. 5 is a diagram illustrating a lens configuration of a projection optical system according to Example 1 of the present embodiment. Referring to FIG. 5, in the projection optical system PL according to the first example, the first imaging optical system G1 has an aspherical convex surface facing the wafer side in order from the reticle side along the traveling direction of light. The lens includes a biconvex lens L11, a biconvex lens L12, a negative meniscus lens L13 having an aspherical concave surface facing the reticle side, and a first concave reflecting mirror CM1. Further, in the first imaging optical system G1, a second concave reflecting mirror CM2 for reflecting light reflected by the first concave reflecting mirror CM1 and passing through the negative meniscus lens L13 toward the second imaging optical system G2. Is disposed in a region not including the optical axis AX between the biconvex lens L12 and the negative meniscus lens L13. Therefore, the biconvex lens L11 and the biconvex lens L12 constitute a first lens group having a positive refractive power. Further, the first concave reflecting mirror CM1 constitutes a concave reflecting mirror arranged near the pupil plane of the first imaging optical system G1.
[0054]
On the other hand, the second imaging optical system G2 includes a positive meniscus lens L21 having a concave surface facing the reticle side, a biconvex lens L22, and an aspheric concave surface facing the wafer side in order from the reticle side along the light traveling direction. A positive meniscus lens L23, a negative meniscus lens L24 having a convex aspheric surface facing the reticle side, a negative meniscus lens L25 having a convex surface facing the reticle side, and a concave aspheric surface facing the reticle side. A concave lens L26, a positive meniscus lens L27 having a concave surface facing the reticle side, a negative meniscus lens L28 having a convex aspheric surface facing the reticle side, a biconvex lens L29, a biconvex lens L210, and a convex surface facing the reticle side. Positive meniscus lens L211, an aperture stop AS, a positive meniscus lens L212 having a concave surface facing the reticle side, and a biconvex lens 213, a positive meniscus lens L214 having an aspheric concave surface facing the wafer side, a positive meniscus lens L215 having a convex surface facing the reticle, a positive meniscus lens L216 having an aspheric concave surface facing the wafer side, It is composed of a plano-convex lens L217 (boundary lens Lb) whose plane faces side.
[0055]
In the first embodiment, all the transmitting members (lenses) and all the reflecting members having power (the first concave reflecting mirror CM1 and the second concave reflecting mirror CM2) constituting the projection optical system PL have a single optical axis AX. Are arranged along. That is, 100% of the transmission members constituting the second imaging optical system G2 are formed of quartz. The medium between the plano-convex lens L217 as the boundary lens Lb and the wafer W is filled with a medium Lm made of deionized water. In the first embodiment, the light from the reticle R enters the first concave reflecting mirror CM1 via the lenses L11 to L13. The light reflected by the first concave reflecting mirror CM1 forms an intermediate image of the reticle R near the first concave reflecting mirror CM1 via the lens L13 and the second concave reflecting mirror CM2. The light reflected by the second concave reflecting mirror CM2 forms a reduced image of the reticle R on the wafer W via the lenses L21 to L217 (Lb).
[0056]
In the first embodiment, all transmission members (lenses) constituting the projection optical system PL are made of quartz (SiO 2). 2 ). The oscillation center wavelength of the ArF excimer laser light, which is the exposure light, is 193.306 nm, and the refractive index of quartz at around 193.306 nm is -1.591 × 10 per +1 pm wavelength change. -6 , And + 1.591 × 10 per -1 pm wavelength change. -6 It changes at the rate of In other words, around 193.306 nm, the dispersion (dn / dλ) of the refractive index of quartz is −1.591 × 10 -6 / Pm. At around 193.306 nm, the refractive index of deionized water is -2.6 × 10 per +1 pm wavelength change. -6 + 2.6 × 10 per -1 pm wavelength change -6 It changes at the rate of In other words, at around 193.306 nm, the dispersion (dn / dλ) of the refractive index of the deionized water is −2.6 × 10 -6 / Pm.
[0057]
Thus, in the first embodiment, the refractive index of quartz at the center wavelength of 193.306 nm is 1.5603261, and the refractive index of quartz at 193.306 nm + 0.1 pm = 193.3061 nm is 1.560325941 and 193.306 nm−. The refractive index of quartz for 0.1 pm = 193.3059 nm is 1.560332659. The refractive index of deionized water with respect to the center wavelength of 193.306 nm is 1.47, and the refractive index of deionized water with respect to 193.306 nm + 0.1 pm = 193.3061 nm is 1.469999974, and 193.306 nm-0. The refractive index of deionized water for 1 pm = 193.3059 nm is 1.47000026.
[0058]
Table 1 below summarizes the data values of the projection optical system PL according to the first example. In Table (1), λ is the central wavelength of the exposure light, β is the projection magnification (image magnification of the entire system), NA is the numerical aperture on the image side (wafer side), and Ro and Ri are the aberration correction areas AR. H and D are the X and Y dimensions of the effective exposure area ER, and R is the radius of curvature of the arc defining the arc-shaped effective exposure area ER (effective imaging area). And Y 0 Represents the maximum image height, respectively. The surface number is the order of the surface from the reticle side along the direction in which the light beam travels from the reticle surface, which is the object surface (first surface), to the wafer surface, which is the image surface (second surface), and r is The radius of curvature of the surface (vertical radius of curvature: mm in the case of an aspherical surface: mm), d represents the on-axis spacing of each surface, that is, the surface spacing (mm), and n represents the refractive index with respect to the center wavelength.
[0059]
It should be noted that the sign of the surface distance d changes each time it is reflected. Therefore, the sign of the surface distance d is negative in the optical path from the first concave reflecting mirror CM1 to the second concave reflecting mirror CM2, and positive in other optical paths. Regardless of the light incident direction, the radius of curvature of the convex surface toward the reticle side is positive, and the radius of curvature of the concave surface is negative. The notation in Table (1) is the same in the following Table (2).
[0060]
[Table 1]
Figure 2004333761
Figure 2004333761
Figure 2004333761
Figure 2004333761
[0061]
FIG. 6 is a diagram illustrating the lateral aberration in the first example. In the aberration diagrams, Y indicates the image height, the solid line indicates the center wavelength of 193.3060 nm, the broken line indicates 193.306 nm + 0.1 pm = 193.3061 nm, and the one-dot chain line indicates 193.306 nm-0.1 pm = 193.3059 nm. I have. The notation in FIG. 6 is the same in FIG. As is clear from the aberration diagram in FIG. 6, in the first embodiment, the wavelength is increased despite securing a very large image-side numerical aperture (NA = 1.04) and a relatively large effective exposure area ER. It can be seen that the chromatic aberration is favorably corrected for exposure light having a width of 193.306 nm ± 0.1 pm.
[0062]
[Second embodiment]
FIG. 7 is a diagram illustrating a lens configuration of a projection optical system according to Example 2 of the present embodiment. Referring to FIG. 7, in the projection optical system PL according to the second example, the first imaging optical system G1 has an aspherical convex surface facing the wafer side in order from the reticle side along the light traveling direction. The lens includes a biconvex lens L11, a biconvex lens L12, a negative meniscus lens L13 having an aspherical concave surface facing the reticle side, and a first concave reflecting mirror CM1. Further, in the first imaging optical system G1, a second concave reflecting mirror CM2 for reflecting light reflected by the first concave reflecting mirror CM1 and passing through the negative meniscus lens L13 toward the second imaging optical system G2. Is disposed in a region not including the optical axis AX between the biconvex lens L12 and the negative meniscus lens L13. Therefore, the biconvex lens L11 and the biconvex lens L12 constitute a first lens group having a positive refractive power. Further, the first concave reflecting mirror CM1 constitutes a concave reflecting mirror arranged near the pupil plane of the first imaging optical system G1.
[0063]
On the other hand, the second imaging optical system G2 includes a positive meniscus lens L21 having a concave surface facing the reticle side, a biconvex lens L22, and an aspheric concave surface facing the wafer side in order from the reticle side along the light traveling direction. A positive meniscus lens L23, a negative meniscus lens L24 having a convex aspheric surface facing the reticle side, a negative meniscus lens L25 having a convex surface facing the reticle side, and a concave aspheric surface facing the reticle side. A concave lens L26, a positive meniscus lens L27 having a concave surface facing the reticle side, a negative meniscus lens L28 having a convex aspheric surface facing the reticle side, a biconvex lens L29, a biconvex lens L210, and a convex surface facing the reticle side. Positive meniscus lens L211, an aperture stop AS, a positive meniscus lens L212 having a concave surface facing the reticle side, and a biconvex lens 213, a positive meniscus lens L214 having an aspheric concave surface facing the wafer side, a positive meniscus lens L215 having a convex surface facing the reticle, a positive meniscus lens L216 having an aspheric concave surface facing the wafer side, It is composed of a plano-convex lens L217 (boundary lens Lb) whose plane faces side.
[0064]
In the second embodiment, a plane-parallel plate Lp is arranged in the optical path between the plano-convex lens L217 as the boundary lens Lb and the wafer W. The optical path between the boundary lens Lb and the plane parallel plate Lp and the optical path between the plane parallel plate Lp and the wafer W are filled with a medium Lm made of deionized water. In the second embodiment, the transmission member (lens) constituting the projection optical system PL is made of quartz or fluorite (CaF 2 ). Specifically, the lens L13, the lens L216, and the lens L217 (Lb) are formed of fluorite, and the other lenses and the parallel plane plate Lp are formed of quartz. That is, about 88% of the transmitting members constituting the second imaging optical system G2 are formed of quartz.
[0065]
Further, in the second embodiment, all the transmitting members (lenses, parallel plane plates) and all the reflecting members having power (the first concave reflecting mirror CM1 and the second concave reflecting mirror CM2) constituting the projection optical system PL are provided. They are arranged along a single optical axis AX. Thus, in the second embodiment, light from the reticle R is incident on the first concave reflecting mirror CM1 via the lenses L11 to L13. The light reflected by the first concave reflecting mirror CM1 forms an intermediate image of the reticle R near the first concave reflecting mirror CM1 via the lens L13 and the second concave reflecting mirror CM2. The light reflected by the second concave reflecting mirror CM2 forms a reduced image of the reticle R on the wafer W via the lenses L21 to L217 (Lb) and the parallel plane plate Lp.
[0066]
In the second embodiment, the oscillation center wavelength of the ArF excimer laser light as the exposure light is 193.306 nm, and near 193.306 nm, the refractive index of quartz is -1.591 × 10 per +1 pm wavelength change. -6 , And + 1.591 × 10 per -1 pm wavelength change. -6 It changes at the rate of In other words, around 193.306 nm, the dispersion (dn / dλ) of the refractive index of quartz is −1.591 × 10 -6 / Pm. In the vicinity of 193.306 nm, the refractive index of fluorite is −0.980 × 10 per +1 pm wavelength change. -6 + 0.980 × 10 per -1 pm wavelength change -6 It changes at the rate of In other words, at around 193.306 nm, the dispersion (dn / dλ) of the refractive index of fluorite is −0.980 × 10 -6 / Pm.
[0067]
Further, at around 193.306 nm, the refractive index of deionized water is -2.6 × 10 per +1 pm wavelength change. -6 + 2.6 × 10 per -1 pm wavelength change -6 It changes at the rate of In other words, at around 193.306 nm, the dispersion (dn / dλ) of the refractive index of the deionized water is −2.6 × 10 -6 / Pm. Thus, in the second embodiment, the refractive index of quartz with respect to the center wavelength of 193.306 nm is 1.5603261, and the refractive index of quartz with respect to 193.306 nm + 0.1 pm = 193.3061 nm is 1.560325941 and 193.306 nm− The refractive index of quartz for 0.1 pm = 193.3059 nm is 1.560332659.
[0068]
Further, the refractive index of fluorite with respect to the central wavelength of 193.306 nm is 1.5014548, and the refractive index of fluorite with respect to 193.306 nm + 0.1 pm = 1.5014454702, and 193.306 nm−0.1 pm = The refractive index of fluorite for 193.3059 nm is 1.501454898. Further, the refractive index of the deionized water with respect to the center wavelength of 193.306 nm is 1.47, and the refractive index of the deionized water with respect to 193.306 nm + 0.1 pm = 193.3061 nm is 1.469999974, which is 193.306 nm-0. The refractive index of deionized water for 1 pm = 193.3059 nm is 1.47000026. Table 2 below summarizes the data values of the projection optical system PL according to the second example.
[0069]
[Table 2]
Figure 2004333761
Figure 2004333761
Figure 2004333761
Figure 2004333761
Figure 2004333761
[0070]
FIG. 8 is a diagram illustrating the lateral aberration in the second example. As is clear from the aberration diagram of FIG. 8, in the second embodiment, as in the first embodiment, a very large image-side numerical aperture (NA = 1.04) and a relatively large effective exposure area ER are secured. However, it can be seen that chromatic aberration is favorably corrected for exposure light having a wavelength width of 193.306 nm ± 0.1 pm.
[0071]
Thus, in each embodiment, a high image-side numerical aperture of 1.04 is secured for an ArF excimer laser beam having a wavelength of 193.306 nm, and an effective exposure area (26.0 mm × 4.0 mm) having an arc shape of 26.0 mm × 4.0 mm is formed. (A static exposure area), and a circuit pattern can be scanned and exposed at a high resolution within a rectangular exposure area of, for example, 26 mm × 33 mm.
[0072]
In the exposure apparatus of the above-described embodiment, the reticle (mask) is illuminated by the illumination device (illumination step), and a transfer pattern formed on the mask is exposed on the photosensitive substrate using the projection optical system (exposure step). Thereby, a micro device (semiconductor element, image pickup element, liquid crystal display element, thin film magnetic head, etc.) can be manufactured. Hereinafter, an example of a method for obtaining a semiconductor device as a micro device by forming a predetermined circuit pattern on a wafer or the like as a photosensitive substrate using the exposure apparatus of the present embodiment will be described with reference to the flowchart of FIG. Will be explained.
[0073]
First, in step 301 of FIG. 9, a metal film is deposited on one lot of wafers. In the next step 302, a photoresist is applied on the metal film on the l lot of wafers. Thereafter, in step 303, using the exposure apparatus of this embodiment, an image of the pattern on the mask is sequentially exposed and transferred to each shot area on the wafer of the lot through the projection optical system. After that, in step 304, the photoresist on the one lot of wafers is developed, and in step 305, the resist on the one lot of wafers is etched using the resist pattern as a mask to form a pattern on the mask. A corresponding circuit pattern is formed in each shot area on each wafer.
[0074]
Thereafter, a device such as a semiconductor element is manufactured by forming a circuit pattern of an upper layer and the like. According to the above-described semiconductor device manufacturing method, a semiconductor device having an extremely fine circuit pattern can be obtained with high throughput. In steps 301 to 305, a metal is vapor-deposited on the wafer, a resist is applied on the metal film, and the respective steps of exposure, development, and etching are performed. After a silicon oxide film is formed on the silicon oxide film, a resist may be applied on the silicon oxide film, and each step of exposure, development, etching and the like may be performed.
[0075]
In the exposure apparatus of the present embodiment, a liquid crystal display element as a micro device can be obtained by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate). Hereinafter, an example of the technique at this time will be described with reference to the flowchart of FIG. In FIG. 10, in a pattern forming step 401, a so-called photolithography step of transferring and exposing a mask pattern onto a photosensitive substrate (a glass substrate coated with a resist or the like) using the exposure apparatus of the present embodiment is executed. By this photolithography process, a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate. Thereafter, the exposed substrate undergoes each of a developing process, an etching process, a resist stripping process, and the like, whereby a predetermined pattern is formed on the substrate, and the process proceeds to the next color filter forming process 402.
[0076]
Next, in the color filter forming step 402, a large number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix, or three sets of R, G, B Are formed in a horizontal scanning line direction to form a color filter. Then, after the color filter forming step 402, a cell assembling step 403 is performed. In the cell assembly step 403, a liquid crystal panel (liquid crystal cell) is assembled using the substrate having the predetermined pattern obtained in the pattern formation step 401, the color filter obtained in the color filter formation step 402, and the like. In the cell assembling step 403, for example, a liquid crystal is injected between the substrate having the predetermined pattern obtained in the pattern forming step 401 and the color filter obtained in the color filter forming step 402, and a liquid crystal panel (liquid crystal cell) is formed. ) To manufacture.
[0077]
Thereafter, in a module assembling step 404, components such as an electric circuit and a backlight for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) are attached to complete a liquid crystal display element. According to the above-described method for manufacturing a liquid crystal display device, a liquid crystal display device having an extremely fine circuit pattern can be obtained with high throughput.
[0078]
In the above-described embodiment, the ArF excimer laser light source is used. However, the present invention is not limited to this. 2 Other suitable light sources, such as a laser light source, can also be used. Furthermore, in the above-described embodiment, the present invention is applied to the projection optical system mounted on the exposure apparatus. However, the present invention is not limited to this, and may be applied to other general projection optical systems. Can also be applied.
[0079]
【The invention's effect】
As described above, in the projection optical system of the present invention, at least two reflecting mirrors and the boundary lens having a positive refractive power on the first surface are used, and all the transmitting members and the reflecting members are single. In a configuration having an effective imaging region that is located along the optical axis and does not include the optical axis, the optical path between the boundary lens and the second surface is filled with a medium having a refractive index greater than 1.1. . As a result, in the present invention, various aberrations such as chromatic aberration and curvature of field are excellently corrected, and excellent image forming performance is obtained. , A relatively small projection optical system capable of ensuring the above can be realized.
[0080]
Therefore, in the exposure apparatus and the exposure method using the projection optical system of the present invention, a fine pattern can be formed through the projection optical system having excellent imaging performance and a large effective image-side numerical aperture and thus high resolution. Transfer exposure can be performed with high precision. Further, by using an exposure apparatus equipped with the projection optical system of the present invention, a good microdevice can be manufactured by high-precision projection exposure through a high-resolution projection optical system.
[Brief description of the drawings]
FIG. 1 is a view schematically showing a configuration of an exposure apparatus according to an embodiment of the present invention.
FIG. 2 is a diagram showing a positional relationship between an optical axis and an effective exposure area having an arc shape formed on a wafer in the present embodiment.
FIG. 3 is a diagram schematically showing a configuration between a boundary lens and a wafer in a first example of the present embodiment.
FIG. 4 is a diagram schematically showing a configuration between a boundary lens and a wafer in a second example of the present embodiment.
FIG. 5 is a diagram showing a lens configuration of a projection optical system according to Example 1 of the present embodiment.
FIG. 6 is a diagram showing lateral aberration in the first example.
FIG. 7 is a diagram showing a lens configuration of a projection optical system according to Example 2 of the present embodiment.
FIG. 8 is a diagram showing lateral aberration in the second example.
FIG. 9 is a flowchart of a method for obtaining a semiconductor device as a micro device.
FIG. 10 is a flowchart of a method for obtaining a liquid crystal display element as a micro device.
[Explanation of symbols]
Lb boundary lens
Lp Parallel flat plate
Lm medium (deionized water)
G1 First imaging optical system
G2 Second imaging optical system
CM1, CM2 Concave reflector
Li Each lens component
100 laser light source
IL illumination optical system
R reticle
RS reticle stage
PL projection optical system
W wafer
WS wafer stage

Claims (18)

第１面の縮小像を第２面上に形成する反射屈折型の投影光学系において、
前記投影光学系は、少なくとも２枚の反射鏡と、第１面側の面が正の屈折力を有する境界レンズとを含み、
前記投影光学系の光路中の雰囲気の屈折率を１とするとき、前記境界レンズと前記第２面との間の光路は１．１よりも大きい屈折率を有する媒質で満たされ、
前記投影光学系を構成するすべての透過部材および屈折力を有するすべての反射部材は単一の光軸に沿って配置され、
前記投影光学系は、前記光軸を含まない所定形状の有効結像領域を有することを特徴とする投影光学系。In a catadioptric projection optical system that forms a reduced image of a first surface on a second surface,
The projection optical system includes at least two reflecting mirrors and a boundary lens whose first surface has a positive refractive power,
When the refractive index of the atmosphere in the optical path of the projection optical system is 1, the optical path between the boundary lens and the second surface is filled with a medium having a refractive index greater than 1.1,
All transmission members and all reflection members having refractive power that constitute the projection optical system are arranged along a single optical axis,
The projection optical system has an effective imaging region having a predetermined shape that does not include the optical axis. 前記少なくとも２枚の反射鏡は、少なくとも１つの凹面反射鏡を有することを特徴とする請求項１に記載の投影光学系。The projection optical system according to claim 1, wherein the at least two reflecting mirrors include at least one concave reflecting mirror. 前記投影光学系は偶数個の反射鏡を有することを特徴とする請求項１または２に記載の投影光学系。3. The projection optical system according to claim 1, wherein the projection optical system has an even number of reflecting mirrors. 前記投影光学系の射出瞳は遮蔽領域を有しないことを特徴とする請求項１乃至３のいずれか１項に記載の投影光学系。The projection optical system according to claim 1, wherein an exit pupil of the projection optical system has no shielding area. 前記投影光学系が有するすべての有効結像領域は前記光軸から外れた領域に存在することを特徴とする請求項１乃至４のいずれか１項に記載の投影光学系。5. The projection optical system according to claim 1, wherein all effective imaging regions of the projection optical system exist in a region off the optical axis. 6. 前記投影光学系は、少なくとも２つの反射鏡を含み前記第１面の中間像を形成するための第１結像光学系と、前記中間像からの光束に基づいて最終像を前記第２面上に形成するための第２結像光学系とを備えていることを特徴とする請求項１乃至５のいずれか１項に記載の投影光学系。The projection optical system includes at least two reflecting mirrors, a first imaging optical system for forming an intermediate image of the first surface, and a final image on the second surface based on a light beam from the intermediate image. The projection optical system according to any one of claims 1 to 5, further comprising a second imaging optical system for forming an image. 前記第１結像光学系は、正の屈折力を有する第１レンズ群と、該第１レンズ群と前記中間像との間の光路中に配置された第１反射鏡と、該第１反射鏡と前記中間像との間の光路中に配置された第２反射鏡とを備えていることを特徴とする請求項６に記載の投影光学系。The first imaging optical system includes a first lens group having a positive refractive power, a first reflecting mirror disposed in an optical path between the first lens group and the intermediate image, and a first reflecting mirror. The projection optical system according to claim 6, further comprising a second reflecting mirror disposed in an optical path between the mirror and the intermediate image. 前記第１反射鏡は、前記第１結像光学系の瞳面の近傍に配置された凹面反射鏡であり、
前記凹面反射鏡が形成する往復光路中には少なくとも１つの負レンズが配置されていることを特徴とする請求項７に記載の投影光学系。The first reflecting mirror is a concave reflecting mirror arranged near a pupil plane of the first imaging optical system,
The projection optical system according to claim 7, wherein at least one negative lens is disposed in a reciprocating optical path formed by the concave reflecting mirror. 前記往復光路中に配置された前記少なくとも１つの負レンズおよび前記境界レンズは蛍石により形成されていることを特徴とする請求項８に記載の投影光学系。The projection optical system according to claim 8, wherein the at least one negative lens and the boundary lens arranged in the reciprocating optical path are formed of fluorite. 前記第１レンズ群の焦点距離をＦ１とし、前記第２面上における最大像高をＹ０とするとき、
５＜Ｆ１／Ｙ０＜１５
の条件を満足することを特徴とする請求項７乃至９のいずれか１項に記載の投影光学系。The focal length of the first lens group and F1, the maximum image height on the second surface when the Y 0,
5 <F1 / Y 0 <15
The projection optical system according to any one of claims 7 to 9, wherein the following condition is satisfied. 前記第１レンズ群は、少なくとも２つの正レンズを有することを特徴とする請求項７乃至１０のいずれか１項に記載の投影光学系。The projection optical system according to claim 7, wherein the first lens group has at least two positive lenses. 前記第２結像光学系は、複数の透過部材のみにより構成された屈折光学系であることを特徴とする請求項６乃至１１のいずれか１項に記載の投影光学系。The projection optical system according to claim 6, wherein the second imaging optical system is a refractive optical system including only a plurality of transmission members. 前記第２結像光学系を構成する透過部材の数の７０％以上の数の透過部材は石英により形成されていることを特徴とする請求項１２に記載の投影光学系。13. The projection optical system according to claim 12, wherein 70% or more of the transmission members constituting the second imaging optical system are formed of quartz. 前記有効結像領域は円弧形状を有し、前記有効結像領域を規定する円弧の曲率半径の大きさをＲとし、前記第２面上における最大像高をＹ０とするとき、
１．０５＜Ｒ／Ｙ０＜１２
の条件を満足することを特徴とする請求項１乃至１３のいずれか１項に記載の投影光学系。When the effective imaging region has a circular arc shape, the size of the arc of curvature defining the effective imaging area and R, which the maximum image height on the second surface and Y 0,
1.05 <R / Y 0 <12
14. The projection optical system according to claim 1, wherein the following condition is satisfied. 第１面の縮小像を第２面上に形成する反射屈折型の投影光学系において、
少なくとも２枚の反射鏡と透過部材とを備え、且つ前記投影光学系の光軸を含まない円弧形状の有効結像領域を備え、
前記有効結像領域を規定する円弧の曲率半径の大きさをＲとし、前記第２面上における最大像高をＹ０とするとき、
１．０５＜Ｒ／Ｙ０＜１２
の条件を満足することを特徴とする投影光学系。In a catadioptric projection optical system that forms a reduced image of a first surface on a second surface,
An effective imaging region having at least two reflecting mirrors and a transmitting member, and having an arc shape not including an optical axis of the projection optical system,
The effective defining an imaging region of the arc of curvature radius magnitude as R, the maximum image height on the second surface when the Y 0,
1.05 <R / Y 0 <12
A projection optical system that satisfies the following condition: 前記第１面に設定されたマスクを照明するための照明系と、前記マスクに形成されたパターンの像を前記第２面に設定された感光性基板上に形成するための請求項１乃至１５のいずれか１項に記載の投影光学系とを備えていることを特徴とする露光装置。16. An illumination system for illuminating the mask set on the first surface, and for forming an image of a pattern formed on the mask on a photosensitive substrate set on the second surface. An exposure apparatus comprising: the projection optical system according to any one of the above. 前記投影光学系に対して前記マスクおよび前記感光性基板を所定方向に沿って相対移動させて前記マスクのパターンを前記感光性基板上へ投影露光することを特徴とする請求項１６に記載の露光装置。17. The exposure according to claim 16, wherein the mask and the photosensitive substrate are relatively moved along a predetermined direction with respect to the projection optical system to project and expose the pattern of the mask onto the photosensitive substrate. apparatus. 前記第１面に設定されたマスクを照明し、請求項１乃至１５のいずれか１項に記載の投影光学系を介して前記マスクに形成されたパターンを前記第２面に設定された感光性基板上に投影露光することを特徴とする露光方法。A photosensitizer configured to illuminate a mask set on the first surface, and a pattern formed on the mask via the projection optical system according to any one of claims 1 to 15 set on the second surface. An exposure method comprising projecting and exposing on a substrate.
JP2003128154A 2003-05-06 2003-05-06 Catadioptric projection optical system, projection aligner, and exposure method Pending JP2004333761A (en)

Priority Applications (44)

Application Number Priority Date Filing Date Title
JP2003128154A JP2004333761A (en) 2003-05-06 2003-05-06 Catadioptric projection optical system, projection aligner, and exposure method
KR1020147029384A KR101521407B1 (en) 2003-05-06 2004-05-06 Projection optical system, and exposure apparatus and exposure method
KR1020147019617A KR101516142B1 (en) 2003-05-06 2004-05-06 Projection optical system, and exposure apparatus and exposure method
SG200717526-8A SG160223A1 (en) 2003-05-06 2004-05-06 Projection optical system, exposure apparatus, and exposure method
KR1020127032215A KR101383984B1 (en) 2003-05-06 2004-05-06 Projection optical system, and exposure apparatus and exposure method
EP13185918.3A EP2722703A3 (en) 2003-05-06 2004-05-06 Projection optical system, and exposure apparatus and exposure method
SG10201405231YA SG10201405231YA (en) 2003-05-06 2004-05-06 Projection optical system, exposure apparatus, and exposure method
CN2007103061168A CN101216598B (en) 2003-05-06 2004-05-06 Projection optical system, exposure apparatus, and exposure method
CN2007103061172A CN101216599B (en) 2003-05-06 2004-05-06 Projection optical system, exposure apparatus and exposure method
KR1020127010592A KR101273713B1 (en) 2003-05-06 2004-05-06 Projection optical system, exposure apparatus, exposure method, and method for manufacturing device
KR1020147019611A KR101516140B1 (en) 2003-05-06 2004-05-06 Projection optical system, and exposure apparatus and exposure method
KR1020167021281A KR101790914B1 (en) 2003-05-06 2004-05-06 Projection optical system, and exposure apparatus and exposure method
KR1020137026333A KR101481935B1 (en) 2003-05-06 2004-05-06 Projection optical system, and exposure apparatus and exposure method
KR1020157005882A KR101647934B1 (en) 2003-05-06 2004-05-06 Projection optical system, and exposure apparatus and exposure method
KR1020147019615A KR101516141B1 (en) 2003-05-06 2004-05-06 Projection optical system, and exposure apparatus and exposure method
EP13175504.3A EP2672307A3 (en) 2003-05-06 2004-05-06 Projection optical system, exposure apparatus, and exposure method
CN200710306118.7A CN101216682B (en) 2003-05-06 2004-05-06 Projection optical system, exposure apparatus, and exposure method
EP13185919.1A EP2722704A3 (en) 2003-05-06 2004-05-06 Projection optical system, and exposure apparatus and exposure method
KR1020057020923A KR20060009891A (en) 2003-05-06 2004-05-06 Projection optical system, and exposure apparatus and exposure method
KR1020137001768A KR101384037B1 (en) 2003-05-06 2004-05-06 Projection optical system, and exposure apparatus and exposure method
PCT/JP2004/006417 WO2004107011A1 (en) 2003-05-06 2004-05-06 Projection optical system, and exposure apparatus and exposure method
EP13185917.5A EP2722702A3 (en) 2003-05-06 2004-05-06 Projection optical system, and exposure apparatus and exposure method
CNB2004800120690A CN100405119C (en) 2003-05-06 2004-05-06 Projection optical system,exposure apparatus and exposure method
KR1020177029949A KR20170119737A (en) 2003-05-06 2004-05-06 Projection optical system, and exposure apparatus and exposure method
CN2008100859109A CN101295140B (en) 2003-05-06 2004-05-06 Projection optical system, exposure device and exposure method
EP04731484A EP1630585A4 (en) 2003-05-06 2004-05-06 Projection optical system, and exposure apparatus and exposure method
KR1020117021027A KR101194449B1 (en) 2003-05-06 2004-05-06 Projection optical system, and exposure apparatus and method of manufacturing micro device
CN2007103061191A CN101216600B (en) 2003-05-06 2004-05-06 Projection optical system, exposure apparatus, and exposure method
IL171745A IL171745A (en) 2003-05-06 2005-11-02 Projection optical system, exposure apparatus, exposure method and device manufacturing method
US11/266,288 US7348575B2 (en) 2003-05-06 2005-11-04 Projection optical system, exposure apparatus, and exposure method
US11/513,160 US9846366B2 (en) 2003-05-06 2006-08-31 Projection optical system, exposure apparatus, and exposure method
US11/583,934 US7309870B2 (en) 2003-05-06 2006-10-20 Projection optical system, exposure apparatus, and exposure method
US11/583,916 US7312463B2 (en) 2003-05-06 2006-10-20 Projection optical system, exposure apparatus, and exposure method
US11/882,208 US20070297072A1 (en) 2003-05-06 2007-07-31 Projection optical system, exposure apparatus, and exposure method
IL196080A IL196080B (en) 2003-05-06 2008-12-18 Projection optical system and exposure apparatus, method of manufacture thereof and method of use thereof to effect exposure of a pattern on a substrate
US12/379,415 US9086635B2 (en) 2003-05-06 2009-02-20 Projection optical system, exposure apparatus, and exposure method
US12/884,332 US20110002032A1 (en) 2003-05-06 2010-09-17 Projection optical system, exposure apparatus, and exposure method
US13/275,760 US9081295B2 (en) 2003-05-06 2011-10-18 Catadioptric projection optical system, exposure apparatus, and exposure method
US13/889,780 US9500943B2 (en) 2003-05-06 2013-05-08 Projection optical system, exposure apparatus, and exposure method
US14/227,691 US9606443B2 (en) 2003-05-06 2014-03-27 Reducing immersion projection optical system
US14/227,726 US9933705B2 (en) 2003-05-06 2014-03-27 Reduction projection optical system, exposure apparatus, and exposure method
US14/227,349 US10156792B2 (en) 2003-05-06 2014-03-27 Projection optical system, exposure apparatus, and exposure method
IL258355A IL258355A (en) 2003-05-06 2018-03-26 Projection optical system and exposure apparatus, method of manufacture thereof and method of use thereof to effect exposure of a pattern on a substrate
US16/016,515 US20180299785A1 (en) 2003-05-06 2018-06-22 Projection optical system, exposure apparatus, and exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003128154A JP2004333761A (en) 2003-05-06 2003-05-06 Catadioptric projection optical system, projection aligner, and exposure method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009245042A Division JP2010026526A (en) 2009-10-26 2009-10-26 Catadioptric projection optical system, exposure device and exposure method

Publications (2)

Publication Number Publication Date
JP2004333761A true JP2004333761A (en) 2004-11-25
JP2004333761A5 JP2004333761A5 (en) 2008-02-28

Family

ID=33504409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003128154A Pending JP2004333761A (en) 2003-05-06 2003-05-06 Catadioptric projection optical system, projection aligner, and exposure method

Country Status (2)

Country Link
JP (1) JP2004333761A (en)
CN (6) CN101216600B (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006179759A (en) * 2004-12-24 2006-07-06 Nikon Corp Optical element and projection aligner
JP2006332669A (en) * 2005-05-25 2006-12-07 Carl Zeiss Smt Ag Projection lens suitable for use together with different immersion liquid, and converting method and manufacturing method therefor
WO2007086220A1 (en) * 2006-01-30 2007-08-02 Nikon Corporation Cata-dioptric imaging system, exposure device, and device manufacturing method
JP2007266186A (en) * 2006-03-28 2007-10-11 Nikon Corp Aligner, method of adjusting aligner, and method of manufacturing device
JPWO2005031823A1 (en) * 2003-09-29 2007-11-15 株式会社ニコン Immersion lens system, projection exposure apparatus, and device manufacturing method
JP2008028369A (en) * 2006-06-21 2008-02-07 Canon Inc Projection optical system
JP2008145728A (en) * 2006-12-11 2008-06-26 Seiko Epson Corp Projection optical system and projector
JP2010074184A (en) * 2005-03-04 2010-04-02 Asml Netherlands Bv Lithographic apparatus and method of manufacturing device
US7755839B2 (en) 2003-12-19 2010-07-13 Carl Zeiss Smt Ag Microlithography projection objective with crystal lens
CN101852974A (en) * 2009-03-31 2010-10-06 索尼公司 Projection type image display apparatus and projection optical system
US7869122B2 (en) 2004-01-14 2011-01-11 Carl Zeiss Smt Ag Catadioptric projection objective
US8199400B2 (en) 2004-01-14 2012-06-12 Carl Zeiss Smt Gmbh Catadioptric projection objective
JP2014194552A (en) * 2014-04-28 2014-10-09 Nikon Corp Cata-dioptric type projection optical system, exposure device, and exposure method
US8913316B2 (en) 2004-05-17 2014-12-16 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US9477153B2 (en) 2005-05-03 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW538256B (en) 2000-01-14 2003-06-21 Zeiss Stiftung Microlithographic reduction projection catadioptric objective
KR101521407B1 (en) 2003-05-06 2015-05-18 가부시키가이샤 니콘 Projection optical system, and exposure apparatus and exposure method
US7348575B2 (en) 2003-05-06 2008-03-25 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US7466489B2 (en) 2003-12-15 2008-12-16 Susanne Beder Projection objective having a high aperture and a planar end surface
JP5398185B2 (en) * 2008-07-09 2014-01-29 キヤノン株式会社 Projection optical system, exposure apparatus, and device manufacturing method
JP5780153B2 (en) * 2011-01-24 2015-09-16 株式会社Ｊｖｃケンウッド Light source device and projection display device
DE102015200927A1 (en) * 2015-01-21 2016-07-21 Carl Zeiss Microscopy Gmbh Apparatus and method for forming an immersion film
CN105549342B (en) * 2016-03-08 2019-01-08 佛山市国星半导体技术有限公司 A kind of ultraviolet laser photolithography method
US11537051B2 (en) * 2017-03-16 2022-12-27 Nikon Corporation Control apparatus and control method, exposure apparatus and exposure method, device manufacturing method, data generating method and program
CN108762483B (en) * 2018-04-16 2021-02-09 广景视睿科技（深圳）有限公司 Interactive projector and interactive projection method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JP3747566B2 (en) * 1997-04-23 2006-02-22 株式会社ニコン Immersion exposure equipment
US6600608B1 (en) * 1999-11-05 2003-07-29 Carl-Zeiss-Stiftung Catadioptric objective comprising two intermediate images
JP2001228401A (en) * 2000-02-16 2001-08-24 Canon Inc Projection optical system, projection aligner by this projection optical system and method for manufacturing device
JP2003114387A (en) * 2001-10-04 2003-04-18 Nikon Corp Cata-dioptic system and projection exposure device equipped with the same system

Cited By (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2005031823A1 (en) * 2003-09-29 2007-11-15 株式会社ニコン Immersion lens system, projection exposure apparatus, and device manufacturing method
JP4492539B2 (en) * 2003-09-29 2010-06-30 株式会社ニコン Immersion type optical system, projection exposure apparatus, and device manufacturing method
US7755839B2 (en) 2003-12-19 2010-07-13 Carl Zeiss Smt Ag Microlithography projection objective with crystal lens
US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
US8199400B2 (en) 2004-01-14 2012-06-12 Carl Zeiss Smt Gmbh Catadioptric projection objective
US9772478B2 (en) 2004-01-14 2017-09-26 Carl Zeiss Smt Gmbh Catadioptric projection objective with parallel, offset optical axes
US8804234B2 (en) 2004-01-14 2014-08-12 Carl Zeiss Smt Gmbh Catadioptric projection objective including an aspherized plate
US8289619B2 (en) 2004-01-14 2012-10-16 Carl Zeiss Smt Gmbh Catadioptric projection objective
US8730572B2 (en) 2004-01-14 2014-05-20 Carl Zeiss Smt Gmbh Catadioptric projection objective
US8416490B2 (en) 2004-01-14 2013-04-09 Carl Zeiss Smt Gmbh Catadioptric projection objective
US8339701B2 (en) 2004-01-14 2012-12-25 Carl Zeiss Smt Gmbh Catadioptric projection objective
US7869122B2 (en) 2004-01-14 2011-01-11 Carl Zeiss Smt Ag Catadioptric projection objective
US8355201B2 (en) 2004-01-14 2013-01-15 Carl Zeiss Smt Gmbh Catadioptric projection objective
US8208199B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
US9019596B2 (en) 2004-05-17 2015-04-28 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US9726979B2 (en) 2004-05-17 2017-08-08 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US9134618B2 (en) 2004-05-17 2015-09-15 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US8913316B2 (en) 2004-05-17 2014-12-16 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
JP2006179759A (en) * 2004-12-24 2006-07-06 Nikon Corp Optical element and projection aligner
JP2010074184A (en) * 2005-03-04 2010-04-02 Asml Netherlands Bv Lithographic apparatus and method of manufacturing device
US10495980B2 (en) 2005-03-04 2019-12-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7843551B2 (en) 2005-03-04 2010-11-30 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8514369B2 (en) 2005-03-04 2013-08-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10495981B2 (en) 2005-03-04 2019-12-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9477159B2 (en) 2005-03-04 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10451973B2 (en) 2005-05-03 2019-10-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9477153B2 (en) 2005-05-03 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006332669A (en) * 2005-05-25 2006-12-07 Carl Zeiss Smt Ag Projection lens suitable for use together with different immersion liquid, and converting method and manufacturing method therefor
WO2007086220A1 (en) * 2006-01-30 2007-08-02 Nikon Corporation Cata-dioptric imaging system, exposure device, and device manufacturing method
US7990609B2 (en) 2006-01-30 2011-08-02 Nikon Corporation Catadioptric imaging system with prolate spheroidal-shaped mirrors
JP2007266186A (en) * 2006-03-28 2007-10-11 Nikon Corp Aligner, method of adjusting aligner, and method of manufacturing device
JP2008028369A (en) * 2006-06-21 2008-02-07 Canon Inc Projection optical system
JP2008145728A (en) * 2006-12-11 2008-06-26 Seiko Epson Corp Projection optical system and projector
JP4609423B2 (en) * 2006-12-11 2011-01-12 セイコーエプソン株式会社 Projection optical system and projector
CN101852974B (en) * 2009-03-31 2011-12-14 索尼公司 Projection type image display apparatus and projection optical system
CN101852974A (en) * 2009-03-31 2010-10-06 索尼公司 Projection type image display apparatus and projection optical system
JP2014194552A (en) * 2014-04-28 2014-10-09 Nikon Corp Cata-dioptric type projection optical system, exposure device, and exposure method

Also Published As

Publication number Publication date
CN1784623A (en) 2006-06-07
CN101216598B (en) 2010-11-17
CN101216599B (en) 2010-10-13
CN101216600B (en) 2010-11-17
CN101216599A (en) 2008-07-09
CN101216598A (en) 2008-07-09
CN101216682B (en) 2020-09-01
CN101295140B (en) 2010-11-17
CN101295140A (en) 2008-10-29
CN100405119C (en) 2008-07-23
CN101216600A (en) 2008-07-09
CN101216682A (en) 2008-07-09

Similar Documents

Publication Publication Date Title
JP2004333761A (en) Catadioptric projection optical system, projection aligner, and exposure method
JP4717974B2 (en) Catadioptric optical system and projection exposure apparatus provided with the optical system
JP4245286B2 (en) Catadioptric optical system and exposure apparatus provided with the optical system
JP4292497B2 (en) Projection optical system, exposure apparatus, and exposure method
JP5621806B2 (en) Projection optical system, exposure apparatus, exposure method, and device manufacturing method
JP2004205698A (en) Projection optical system, exposure device and exposing method
KR20060009891A (en) Projection optical system, and exposure apparatus and exposure method
JP4370582B2 (en) Projection optical system, exposure apparatus, and exposure method
JPWO2007086220A1 (en) Catadioptric imaging optical system, exposure apparatus, and device manufacturing method
JP2004317534A (en) Catadioptric image-formation optical system, exposure device, and exposure method
JP2002372668A (en) Catadioptric system and exposure device having this catadioptric system
JP2008085328A (en) Liquid immersion objective optical system, exposure apparatus, device manufacturing method, and border optical element
JP2006086141A (en) Projection optical system, aligner, and method of exposure
JP2005257740A (en) Projection optical system, exposing device, and exposure method
JP2005003982A (en) Projection optical system, and device and method of exposure
JP2005129775A (en) Catadioptric projection optical system, aligner, and exposure method
JP6358242B2 (en) Exposure apparatus, exposure method, device manufacturing method, and pattern forming method
JP2005195713A (en) Projection optical system, exposure device, and exposure method
JP6525069B2 (en) Exposure apparatus, exposure method and device manufacturing method
JP4482874B2 (en) Projection optical system, exposure apparatus, and exposure method
JP5664697B2 (en) Catadioptric projection optical system, exposure apparatus, and exposure method
JP2014194552A (en) Cata-dioptric type projection optical system, exposure device, and exposure method
JP5877965B2 (en) Projection optical system, exposure apparatus, exposure method, and device manufacturing method
JP2004354555A (en) Reflection refraction type projection optical system, exposing device and exposing method
JP2010026526A (en) Catadioptric projection optical system, exposure device and exposure method

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060322

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080110

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090302

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090804

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091026

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20091111

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20100319

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20100621

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20100621