JP2004104021A - Aligner and method for manufacturing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To accurately expose by reducing measuring errors of a stage position due to a pressure difference between an internal space and an external space of a sample chamber. <P>SOLUTION: A column 1 and an interferometer 21 are connected via a coupling member 2 in the internal space of the sample chamber 3. Thus, even when the chamber 3 receives a vacuum pressure and is deformed, a positional relationship between the column 1 and the interferometer 21 is maintained, and hence the measuring error of the stage position can be suppressed to a small value. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an exposure apparatus and a device manufacturing method, and for example, relates to an exposure apparatus that draws or transfers a pattern on a sample such as a substrate in a vacuum or a reduced-pressure atmosphere, and a device manufacturing method using the same.
[0002]
[Prior art]
In an apparatus for producing or inspecting a fine pattern such as a circuit pattern of a magnetic head or a semiconductor device, a circuit pattern of a mask or a reticle for forming a circuit pattern of the semiconductor device, a charged particle beam is applied to these objects (samples). Alternatively, a circuit pattern is manufactured or inspected by irradiation with reduced X-rays (EUV).
[0003]
It is essential to use charged particle beams, particularly electron beams, in a vacuum. Also, as a light source of a reduced projection exposure apparatus called a stepper and a scanner, use of X-rays and reduced X-rays having a shorter wavelength than an excimer laser is being studied along with the miniaturization of circuit patterns. Use in a medium or low vacuum atmosphere is essential.
[0004]
Hereinafter, as one example, an electron beam drawing apparatus that draws a circuit pattern on a sample using an electron beam will be described. An electron beam lithography apparatus generates an electron beam in an ultra-high vacuum environment, scans a semiconductor substrate with the electron beam, or manufactures a mask or a reticle used in an exposure apparatus such as a stepper, using a glass substrate or the like. Is an apparatus for forming an LSI pattern on a substrate.
[0005]
FIG. 4 is a diagram showing a configuration of a conventional electron beam drawing apparatus. In FIG. 4, an electron beam emitted from a column (projection system) 1 irradiates a sample 10 mounted on a stage 4 in a sample chamber 3. The position of the sample 10 is controlled by measuring the position of the mirror 20 fixed to the stage 4 using laser light. Since the laser light is easily affected by fluctuations in air and changes in air pressure in the atmosphere, the interferometer 21 is arranged in a vacuum. Further, it is preferable that the position of the sample 10 is measured with reference to the column 1. Therefore, the interferometer 21 is attached to the lower surface of the upper partition 3A of the sample chamber 3 in which the relative position with respect to the column 1 can be easily adjusted.
[0006]
The sample chamber 3 is mounted on a surface plate 8, and the surface plate 8 is supported by a mount 5 having a vibration insulating function. Further, the main body gantry 7 holding the mount 5 is arranged on a base 6 installed on a floor 9. The column 1 is evacuated by a column vacuum pump 50, and the internal atmosphere is high vacuum (for example, 10 ^-4 Pa or less). The sample chamber 3 is evacuated by a sample chamber vacuum pump 40, and the atmosphere inside the sample chamber 3 is high vacuum (for example, 10 ^-4 (Pa units).
[0007]
The transport path of the sample will be described. The sample 10 is transported into the preliminary exhaust chamber 30 from the outside, which is an atmospheric atmosphere, by the transport device 31 in the preliminary exhaust chamber 30 adjacent to the sample chamber 3. Thereafter, the inside of the preliminary exhaust chamber 30 is preliminarily evacuated from an atmospheric state to a vacuum state by a vacuum pump (not shown). After the inside of the pre-evacuation chamber 30 has reached the same degree of vacuum as the sample chamber 3, the valve 32 is opened, and the sample 10 is transferred onto the stage 4. After the circuit pattern is drawn or transferred (exposed) on the sample 10, the sample 10 is transferred from the sample chamber 3 to the preliminary exhaust chamber 30, and after the preliminary exhaust chamber 30 is returned from the vacuum state to the atmosphere, the sample 10 is Transported to By the above series of operations, the sample 10 can be transported while the sample chamber 3 is kept in a vacuum state, and the throughput is improved.
[0008]
The column exhaust vacuum pump 50 is connected to the column 1 via a column exhaust bellows 50A, and is held by a gantry 51 supported on the base 8.
[0009]
[Problems to be solved by the invention]
In the electron beam lithography apparatus, it is necessary to keep the electron beam path at a high vacuum as described above in order to prevent energy loss of the electron beam. However, a problem with the conventional apparatus configuration is that the measurement error of the sample position is large.
[0010]
2. Description of the Related Art Samples, particularly wafers, in recent years have a large diameter in order to improve productivity, and the number of chips obtained per wafer has been increased. For this reason, it is necessary to increase the stroke of the stage for moving the sample, which inevitably increases the size of the sample chamber. As a result, the area of the sample chamber 3 that receives a vacuum negative pressure increases, and in the conventional apparatus configuration, the following error factors increase.
[0011]
The sample chamber 3 is deformed by the vacuum negative pressure, and accordingly, the positions of the interferometer 21 and the optical component 23 attached to the sample chamber 3 change, causing a length measurement error. FIG. 5 shows the change of the laser optical component 23 due to the deformation of the sample chamber 3, and FIG. 6 shows the state of the deformation of the upper partition 3A due to the vacuum negative pressure and the column 1 falling when the column 1 is evacuated. Is shown. The following errors occur due to these changes, deformation, and fall. Further, even after the vacuum environment is once established, the vacuum negative pressure applied to the sample chamber 3 always changes under the influence of the atmospheric pressure.
[0012]
(1) Length measurement error due to interferometer displacement ΔX
When the interferometer 21 is displaced by ΔX, an error is added by ΔX to the position information of the sample 10 with respect to the column 1.
[0013]
(2) Length measurement error due to column deformation ΔY
When the column 1 is displaced by ΔY, an error is added by ΔY to the positional information of the sample 10 with respect to the column 1.
[0014]
(3) Abbe error due to interferometer displacement ΔZ
If the pitching of the stage 4 occurs by θp while the interferometer 21 is displaced by ΔZ, the following length measurement error occurs.
[0015]
ΔZ · sin θp
(4) Cosine error due to interferometer rotation Δθ
When the interferometer 21 rotates by Δθ, the following length measurement errors occur.
[0016]
L (1-cosΔθ); L: measured length
As a method of reducing the above-mentioned various errors, a method of increasing the rigidity of the partition wall constituting the sample chamber 3 can be used. In this case, an increase in load on the mount due to an increase in the mass of the sample chamber 3 is inevitable. On the other hand, a calibration method such as measuring the error in advance and giving a correction value to the control is conceivable.However, since the atmospheric pressure changes with time, it cannot be calibrated with a constant correction value, and real-time correction is required. Control system becomes very complicated.
[0017]
In addition, the above-mentioned errors (1) and (2) can be reduced by employing a structure in which the reference light of the interferometer 21 is irradiated on the reference mirror 25 attached to the column 1 as shown in FIG. It is possible. However, in this case, the optical axis adjustment becomes complicated, and the work time increases.
[0018]
The present invention has been made in view of the above background, and for example, to reduce a measurement error of a stage position that can be caused by a pressure difference between an internal space and an external space of a sample chamber, It is an object of the present invention to enable highly accurate exposure.
[0019]
More specific objects and other objects of the present invention will be apparent from the various problems described above and the description in the embodiments of the present invention.
[0020]
[Means for Solving the Problems]
A first aspect of the present invention relates to an exposure apparatus, wherein a sample chamber in which an internal space is separated from an external space by a partition, a stage arranged in the internal space for moving a sample, and wherein the internal space is higher than the external space. A projection system that projects a beam for drawing or transferring a pattern on the sample in a state where the pressure is low, the projection system, a measurement device that is arranged in the internal space, and measures a position of the stage; and the projection system. And a connecting member for connecting the measuring instrument and the measuring instrument. The exposure apparatus of the present invention is suitable for, for example, a charged particle beam exposure apparatus such as an electron beam exposure apparatus, and a light exposure apparatus such as an X-ray or reduced X-ray exposure apparatus.
[0021]
According to a preferred embodiment of the present invention, it is preferable that the partition wall is configured such that its deformation does not substantially affect the positional relationship between the projection system and the measuring instrument.
[0022]
According to a preferred embodiment of the present invention, it is preferable that the connecting member is disposed in the internal space, for example.
[0023]
According to a preferred embodiment of the present invention, the measuring device includes, for example, an interferometer, the exposure device is disposed in the external space, and an optical component that provides a laser beam to the interferometer; A second connecting member that connects the optical component and the connecting member through an opening provided in the opening, and a seal member that is provided in the opening to maintain airtightness of the internal space. preferable. Here, it is preferable that the sealing member is configured to maintain the airtightness of the internal space while connecting the optical component and the partition wall with low rigidity.
[0024]
According to a preferred embodiment of the present invention, for example, the connection member includes a projection system connection member that connects the projection system to the partition, and a measuring device connection member that connects the measuring device to the partition. In this case, the position where the projection system connecting member is connected to the partition and the position where the measuring instrument connecting member is connected to the partition are preferably substantially the same. For example, it is preferable that the projection system connecting member is connected to one surface of the partition at a predetermined position, and the measuring device connecting member is connected to the other surface at or near the predetermined position.
[0025]
According to a preferred embodiment of the present invention, the measuring device includes an interferometer, the exposure device is disposed in the external space, and provides an optical component that provides laser light to the interferometer, and a deformation of the partition wall. And a support for supporting the optical component on the partition by a structure that blocks transmission of distortion due to the optical member to the optical member.
[0026]
According to a preferred embodiment of the present invention, it is preferable that a cooling system for cooling the connecting member or a temperature adjusting system for maintaining the temperature of the connecting member substantially constant is further provided.
[0027]
According to a preferred embodiment of the present invention, it further includes a structure configured to support the stage, in addition to connecting the projection system and the measuring instrument, partially including the connection member. Is preferred. Here, the measuring device may include an interferometer. The exposure apparatus is disposed in the external space, and provides an optical component that provides laser light to the interferometer, and a second connection that connects the optical component and the structure through an opening provided in the partition. It is preferable to further include a member and a seal member provided in the opening to maintain the airtightness of the internal space. It is preferable that the seal member is configured to maintain the airtightness of the internal space while connecting the optical component and the partition wall with low rigidity.
[0028]
According to a preferred embodiment of the present invention, the laser light emitted from the optical component is provided to the interferometer arranged in the internal space through a second opening provided in the partition, and The apparatus further includes a window member integrated with the optical component, and a second seal member that seals between the second opening and the window member to maintain airtightness of the internal space. Is preferred. It is preferable that the second seal member is configured to maintain the airtightness of the internal space while connecting the second opening and the window member with low rigidity.
[0029]
According to a preferred embodiment of the present invention, the exposure apparatus connects a portion of the projection system exposed to the external space to the structure through a third opening provided in the partition. It is preferable to further include a connecting member, and a third seal member provided in the third opening to maintain airtightness of the internal space.
[0030]
According to a preferred embodiment of the present invention, the measuring instrument is an interferometer having a reference mirror, and preferably measures the position of the stage using a movable mirror fixed to the stage.
[0031]
According to a preferred embodiment of the present invention, the projection system may be configured to project a charged particle beam for drawing a pattern on the sample onto the sample, or an original on which the pattern is formed. May be configured to project the patterned light on the sample.
[0032]
A second aspect of the present invention relates to a device manufacturing method for manufacturing a device through a lithography process, and includes a step of forming a pattern on the device using the above-described exposure apparatus.
[0033]
BEST MODE FOR CARRYING OUT THE INVENTION
The present invention is applicable to, for example, an exposure apparatus that performs exposure in a vacuum or a predetermined pressure atmosphere, for example, an exposure apparatus that uses an electron beam, X-ray, or reduced X-ray (EUV). According to the present invention, for example, a position change of a stage on which a sample to be exposed is placed can be measured with high accuracy.
[0034]
[First Embodiment]
FIG. 1 is a diagram showing a schematic configuration of an exposure apparatus (electron beam drawing apparatus) according to a first embodiment of the present invention. In FIG. 1, a sample chamber 3 as a vacuum container is supported on a base 6 by a mount 5. The sample chamber 3 partitions an internal space for processing a sample from an external space by a partition (enclosing member) including, for example, a bottom partition, a side partition, and an upper partition. A stage 4 on which the sample 10 is mounted is mounted in the sample chamber 3, and the column 1 is supported above the sample chamber 3 by the upper partition of the sample chamber 3. The space between the column 1 and the column opening of the upper partition wall of the sample chamber 3 is sealed with a sealing material such as an O-ring so that airtightness in the sample chamber 3 is maintained.
[0035]
The interferometer 21 and the column 1 are connected and integrated in the sample chamber 3 by a connecting member (length measuring base) 2 having high rigidity. Thus, by connecting the interferometer 21 and the column 1 in the sample chamber 3 by the connecting member 2, the positional relationship between the interferometer 21 and the column 1 due to the pressure difference between the outside and the inside of the sample chamber 3 is obtained. Changes can be prevented.
[0036]
The laser optical component 23 including the laser head, which is disposed in the air atmosphere, is connected to the connecting member (length measuring base) 2 by the connecting member 2A and is connected to the upper partition of the sample chamber 3 via the bellows 11. I have. The connecting member 2A is provided with high rigidity so that the positional relationship between the interferometer 21 and the laser optical component 23 does not change. The bellows 11 has a low rigidity so that the deformation of the sample chamber 3 due to the pressure difference between the outside and the inside of the sample chamber 3, that is, the vacuum negative pressure, is not transmitted to the connecting member (length measuring base) 2. 2 and the sample chamber 3 is kept airtight.
[0037]
On the stage 4, there is provided a moving top 20 for position measurement. A beam for length measurement emitted from a laser optical component 23 and passed through an interferometer 21 is incident on the moving mirror 20. An opening for introducing laser light is provided in the upper partition of the sample chamber 3, and a transmission glass (window) 23 is arranged so as to close the opening. The measurement beam emitted from the laser optical component 23 is transmitted through the transmission glass 23 and introduced into the sample chamber 3. A sealing material such as an O-ring is disposed between the transmission glass 23 and the upper partition of the sample chamber 3, thereby keeping the sample chamber 2 airtight.
[0038]
The interferometer 21 has a reference mirror, and irradiates the movable mirror 20 fixed to the stage 4 with laser light to cause the movable mirror 20 and the laser light reflected from the reference mirror to interfere with each other. By detecting the interference light, the position of the movable mirror 20 (as a result, the position of the stage 4 or the sample 10) can be measured.
[0039]
The column 1 is evacuated by a column vacuum pump 50 and the internal atmosphere is high vacuum (for example, 10 ^-4 Pa or less). Further, the sample chamber 3 is evacuated by a sample chamber vacuum pump 40, and the atmosphere inside the sample chamber 3 is high vacuum (for example, 10 V). ^-4 (Pa units).
[0040]
The transport path of the sample will be described. The sample 10 is transported into the preliminary exhaust chamber 30 from the outside, which is an atmospheric atmosphere, by the transport device 31 in the preliminary exhaust chamber 30 adjacent to the sample chamber 3. Thereafter, the inside of the preliminary exhaust chamber 30 is preliminarily evacuated from an atmospheric state to a vacuum state by a vacuum pump (not shown). After the inside of the pre-evacuation chamber 30 has reached the same degree of vacuum as the sample chamber 3, the valve 32 is opened, and the sample 10 is transferred onto the stage 4. After the circuit pattern is drawn or transferred (exposed) on the sample 10, the sample 10 is transferred from the sample chamber 3 to the preliminary exhaust chamber 30, and after the preliminary exhaust chamber 30 is returned from the vacuum state to the atmosphere, the sample 10 is Transported to
[0041]
One of the features of the structure of the exposure apparatus according to this embodiment is that a connecting member (length measuring base) 2 for connecting an interferometer 21 for measuring the position of the stage 4 and the column 1 with high rigidity and integrating them with each other is integrated. That is, it is arranged in the internal space of the sample chamber 3, that is, in a vacuum. As a result, it is possible to reduce the influence on the length measurement error due to the vacuum negative pressure, which is a problem in the conventional configuration.
[0042]
That is, when the internal space of the sample chamber 3 is changed from the atmospheric state to the vacuum state, a negative pressure of 1 atm is applied to the sample chamber 3, and the upper partition of the sample chamber 3 in which the column 1 is mounted is greatly deformed. sell. Although the position of the column 1 moves in accordance with the deformation of the sample chamber 3, in this embodiment, the column 1 and the connecting member (length measuring base) 2 are connected with high rigidity in a vacuum. The distance between the interferometers hardly depends on the deformation of the sample chamber 3 due to the vacuum negative pressure.
[0043]
Accordingly, the positional relationship between the interferometer 21 fixed on the connecting member (length measuring base) 2 and the column 1 is maintained substantially constant, and the position of the stage 4 with respect to the column 1 (further, the position of the sample 10). ) Can be controlled with high precision, and the pattern can be drawn or transferred (exposed) on the sample 10 with high precision.
[0044]
Furthermore, since the laser optical component 23 is fixed to the connecting member (length measuring base) 2 with high rigidity via the connecting member 2A, the positional relationship between the laser optical component 23 and the connecting member 2 also depends on the vacuum negative pressure. It does not depend on the deformation of the sample chamber 3. That is, there is no need for readjustment such as optical axis alignment.
[0045]
It is preferable that the connecting member (length measuring base) 2 is made of a material that can obtain high rigidity. In addition, since the measurement error due to thermal expansion cannot be ignored, the connecting member 2 is preferably made of a material having a small linear expansion coefficient. ^-6 It is preferable to be made of a material having a linear expansion coefficient of / K or less.
[0046]
As such a material, for example, ceramics (for example, SiC or SiN) or a composite material of ceramics and metal is preferable.
[0047]
In this embodiment, since an electron beam lithography apparatus is taken as an example, a projection system (projection system) for projecting a pattern onto a sample is expressed as a column. For example, X-rays, reduced X-rays (EUV), etc. In an apparatus using the above, such a projection system is generally called a projection optical system or a reflection optical system. This is the same for the following second and third embodiments.
[0048]
FIG. 2 is a diagram showing a schematic configuration of an exposure apparatus (electron beam drawing apparatus) according to the second embodiment of the present invention. In the first embodiment, the connecting member (length measuring base) 2 and the column 1 are directly connected. However, in the second embodiment, in order to improve the assemblability, the connecting member (length measuring base) is used. 2) and the column 1 are connected via an upper partition of the sample chamber 3. Note that items that are not particularly mentioned as the second embodiment are in accordance with the first embodiment.
[0049]
The connecting member (length measuring base) 2 and the upper partition of the sample chamber 3 are connected by a connecting member 2C, and the column 1 is fixed to the upper wall partition of the sample chamber 3 in a manner that keeps the sample chamber 3 airtight. I have. Here, the first position at which the column 1 is connected to the upper partition of the sample chamber 3 and the second position at which the connecting member 2C is connected to the upper wall of the sample chamber 3 are substantially the same positions of the upper partition of the sample chamber 3. Preferably, there is. In the example shown in FIG. 2, the column 1 is connected to the outer surface of the upper partition of the sample chamber 3 at the first position, and the connecting member 2C is connected to the inner surface at the second position substantially equal to the first position. That is, since the measurement error when the sample chamber 3 is deformed depends on (substantially proportionally) the distance between the first position and the second position, it is possible to reduce the measurement error by making the two positions the same or close. it can.
[0050]
It is preferable to provide a cooling flow path (temperature control flow path) 2B inside the connecting member (length measurement base) 2. For example, while monitoring the temperature of the connecting member 2 or the coolant (for example, cooling water) with a temperature sensor (not shown), the connecting member (length measurement base) 2 or the medium can be controlled to a constant temperature. The temperature control system including such a coolant channel can be provided in the first embodiment and a third embodiment described later.
[0051]
The laser optical component 23 is supported by the sample chamber 3 via the support 22. The support table 22 is supported at, for example, three points by the sample chamber 3 in order to reduce (cut off) the influence of distortion caused by a change in vacuum negative pressure in the sample chamber 3.
[0052]
With the above-described configuration, the column 1 can be removed and attached only by removing from the sample chamber 3 and attaching to the sample chamber 3, so that, for example, ease of assembly and maintenance is improved. The laser optical component 23 is supported by the sample chamber 3 at, for example, three points in order to reduce the influence of distortion due to a change in the differential pressure of the sample chamber 3, so that the laser optical component 23 is connected to the connecting member (length measurement). Even in the case where the configuration of supporting the sample chamber 3 is not adopted, the influence of the distortion of the sample chamber 3 is reduced, and the ease of assembly and maintenance is improved. However, in such a support structure of the laser optical component 23, it is possible to reduce the error with respect to ΔX and ΔZ in FIG. 5, but the positional relationship between the column 1 and the laser optical component 23 changes.
[0053]
Further, by forming the refrigerant flow path (temperature control flow path) 2B inside the connecting member (length measuring base) 2, the distance between the column 1 and the interferometer 21 is reduced by the thermal expansion and heat of the connecting member 2. The measurement error caused by the change due to the contraction can be reduced.
[0054]
In addition, as a medium for adjusting the temperature control of the connecting member (length measuring base) 2, for example, a gas (for example, steam) in addition to a liquid such as water (cooling water) can be used. Further, instead of using a temperature control medium, a temperature control element such as a Peltier element can be used.
[0055]
FIG. 3 is a diagram showing a schematic configuration of an exposure apparatus (electron beam drawing apparatus) according to the third embodiment of the present invention. In this embodiment, as a connecting member for connecting the column 1 and the interferometer 21 in the internal space of the sample chamber 3, a structure 90 which also serves as a structure for supporting the stage 4 is provided.
[0056]
In addition to directly connecting the structure 90 and the column 1, it is preferable to provide a reinforcing member 91 between the structure 90 and the column 1 for reinforcing the connection. In this case, the reinforcing member 91 and the upper partition wall of the sample chamber 3 are connected with low rigidity by a bellows 91A arranged so as to maintain airtightness in the sample chamber 3.
[0057]
The sample chamber 3 is connected to a vacuum pump 40 for exhausting the gas in the processing chamber 3 and a preliminary exhaust chamber 30. These are supported, for example, by a floor 9. The column 1 and the upper partition of the sample chamber 3 are connected with low rigidity by a bellows 1A arranged so as to maintain airtightness in the sample chamber 3.
[0058]
The mount 5 supports the surface plate 8 on the floor 9 with high strength. The platen 8 is connected to the mount 5 with low rigidity by a bellows 5A arranged so as to maintain airtightness in the sample chamber 3.
[0059]
The laser optical component 23 including the laser head disposed in the air atmosphere is connected to the structure 90 by the connecting member 2A, and is also connected to the upper partition of the sample chamber 3 via the bellows 11. The connecting member 2A has high rigidity so that the positional relationship between the interferometer 21 and the laser optical component 23 does not change. The bellows 11 has a laser rigid component 23 and a structural body with low rigidity so that the pressure difference between the outside and the inside of the sample chamber 3, that is, the deformation of the sample chamber 3 due to the vacuum negative pressure is not transmitted to the connecting member (length measuring base) 2. 90, and the sample chamber 3 is kept airtight.
[0060]
Further, in this embodiment, a transmission glass 24 that transmits a beam to be introduced into the processing chamber 3 is fixed to the laser optical component 23, and the laser optical component 23 is used to maintain airtightness in the processing chamber 3. The bellows 24A arranged so as to surround the path is connected to the upper partition of the sample chamber 3 with low rigidity.
[0061]
In this embodiment, the transmission glass 24 is separated from the sample chamber 3 and arranged so as to be mechanically integrated with the laser optical component 23. Thereby, when the structure 90 moves relatively to the sample chamber 3, a measurement error generated due to a change in the position where the laser light passes through the transmission glass 24 can be reduced. That is, according to such a structure, the positional relationship between the transmission glass 24 and the laser beam passing therethrough is maintained constant even during the relative movement. Although this embodiment is adopted in the third embodiment, a similar effect can be obtained in the first embodiment.
[0062]
According to this embodiment, the relative positional relationship between the stage 4 and the column 1 can be kept constant without depending on the distortion of the sample chamber 3 due to the vacuum negative pressure fluctuation. Further, by providing the reinforcing member 91, the rigidity between the structure 90 and the column 1 can be further increased. Further, by structurally separating the sample chamber 3 from the column 1 and the stage 4, the path through which vibration transmitted from the pump or the like to the sample chamber 3 is transmitted to the column 1 or the stage 4 is only a low-rigid bellows. Therefore, the column 1 and the stage 4 can be insulated from the vibration of the sample chamber 3.
[0063]
According to this embodiment, the strength required for the sample chamber 3 is reduced. That is, it is sufficient that the sample chamber 3 can maintain a predetermined degree of vacuum. For example, there is no need to consider ensuring the relative positional relationship between the column 1 and the interferometer 21.
[0064]
Also in this embodiment, by providing a flow path for temperature control inside the structure 90 and / or the reinforcing member 90, the distance between the column 1 and the interferometer 21 can be reduced by the structure 90 and / or the reinforcing member. Measurement errors due to thermal expansion / contraction of the 90 can be reduced.
[0065]
Next, a manufacturing process of a semiconductor device using the above exposure apparatus will be described. FIG. 8 is a diagram showing a flow of the entire semiconductor device manufacturing process. In step 1 (circuit design), the circuit of the semiconductor device is designed. In step 2 (exposure control data generation / mask production), based on the designed circuit pattern, exposure control data for controlling drawing by a charged particle beam or a mask (original) is produced. On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the exposure control data or the mask. The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step 4, and assembly such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). Process. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).
[0066]
FIG. 9 is a diagram showing a detailed flow of the wafer process. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface. Step 13 (electrode formation) forms electrodes on the wafer by vapor deposition. Step 14 (ion implantation) implants ions into the wafer. In step 15 (resist processing), a photosensitive agent is applied to the wafer. Step 16 (exposure) uses the above-described exposure apparatus to transfer a circuit pattern onto a wafer. Step 17 (development) develops the exposed wafer. In step 18 (etching), portions other than the developed resist image are removed. Step 19 (resist stripping) removes unnecessary resist after etching. By repeating these steps, multiple circuit patterns are formed on the wafer.
[0067]
【The invention's effect】
According to the present invention, for example, it is possible to reduce a measurement error of a stage position that may be caused by a pressure difference between an internal space and an external space of a sample chamber. Thus, high-precision exposure (for example, exposure with high pattern overlay accuracy) becomes possible.
[Brief description of the drawings]
FIG. 1 is a diagram showing a schematic configuration of an exposure apparatus (electron beam drawing apparatus) according to a first embodiment of the present invention.
FIG. 2 is a diagram illustrating a schematic configuration of an exposure apparatus (an electron beam lithography apparatus) according to a second embodiment of the present invention.
FIG. 3 is a diagram illustrating a schematic configuration of an exposure apparatus (an electron beam lithography apparatus) according to a third embodiment of the present invention.
FIG. 4 is a diagram showing a configuration of a conventional electron beam drawing apparatus.
FIG. 5 is a diagram showing a problem of a conventional example.
FIG. 6 is a diagram showing a problem of a conventional example.
FIG. 7 is a diagram showing a configuration of a conventional electron beam drawing apparatus.
FIG. 8 is a diagram showing a device manufacturing method.
FIG. 9 is a diagram showing a device manufacturing method.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Column, 1A ... Column exhaust bellows, 2 ... Connecting member (length measuring base), 2A ... Connecting member, 2B ... Cooling channel, 2C ... Length measuring base Connecting member, 3 ... Sample chamber, 4 ... Stage, 5 ... Mount, 5A ... Mount bellows, 6 ... Base, 7 ... Main body stand, 8 ... Surface plate, 8A: stage base, 9: floor, 10: sample, 11: bellows, 12: support base, 20: movable mirror, 21: interferometer, 22 ...・ Support stand, 23 ・ ・ ・ Laser optical parts, 24 ・ ・ ・ Transmissive glass, 24A ・ ・ ・ Bellows for transparent glass, 25 ・ ・ ・ Reference mirror, 30 ・ ・ ・ Preliminary exhaust chamber, 30A ・ ・ ・ Preliminary exhaust chamber Bellows, 31 ・ ・ ・ Transfer device, 32 ・ ・ ・ Valve, 33 ・ ・ ・ Atmospheric valve, 34 ・ ・ ・ For preliminary exhaust chamber Table, 40 ... Vacuum pump for exhausting sample chamber, 50 ... Vacuum pump for exhausting column, 50A ... Bellows for exhausting column, 51 ... Stand, 70 ... Stand for vacuum pump, 90 ... .Structure, 91 ... reinforcement member, 91A ... reinforcement member exhaust bellows

Claims (20)

An exposure apparatus,
A sample chamber that separates the internal space from the external space by partition walls,
A stage that is arranged in the internal space and moves the sample;
In a state where the internal space is at a lower pressure than the external space, a projection system that projects a beam for drawing or transferring a pattern on the sample to the sample,
A measuring instrument arranged in the internal space and measuring a position of the stage,
A connecting member that connects the projection system and the measuring instrument,
An exposure apparatus comprising: 2. The exposure apparatus according to claim 1, wherein the partition is configured such that its deformation does not substantially affect the positional relationship between the projection system and the measuring instrument. 3. The exposure apparatus according to claim 1, wherein the connecting member is disposed in the internal space. The instrument includes an interferometer,
The exposure apparatus,
An optical component arranged in the external space and providing laser light to the interferometer,
A second connecting member that connects the optical component and the connecting member through an opening provided in the partition;
4. The exposure apparatus according to claim 3, further comprising: a sealing member provided at the opening to maintain the airtightness of the internal space. The exposure apparatus according to claim 4, wherein the seal member is configured to maintain the airtightness of the internal space while connecting the optical component and the partition wall with low rigidity. The connecting member,
A projection system connecting member for connecting the projection system to the partition,
A measuring instrument connecting member for connecting the measuring instrument to the partition,
3. The exposure according to claim 1, wherein a position at which the projection system connecting member is connected to the partition and a position at which the measuring instrument connecting member is connected to the partition are substantially the same. apparatus. 7. The projection system connecting member is connected to one surface at a predetermined position of the partition, and the measuring device connecting member is connected to the other surface at or near the predetermined position. 3. The exposure apparatus according to claim 1. The instrument includes an interferometer,
The exposure apparatus,
An optical component arranged in the external space and providing laser light to the interferometer,
A support that supports the optical component on the partition by a structure that blocks the distortion due to the deformation of the partition from being transmitted to the optical member,
The exposure apparatus according to any one of claims 1, 2, 3, 6, and 7, further comprising: The exposure apparatus according to claim 1, further comprising a cooling system that cools the connection member. 9. The exposure apparatus according to claim 1, further comprising a temperature control system for maintaining a temperature of the connecting member substantially constant. The structure according to claim 1, further comprising a structure including the connecting member as a part, connecting the projection system and the measuring instrument, and further configured to support the stage. The exposure apparatus according to any one of items 10 to 10. The instrument includes an interferometer,
The exposure apparatus,
An optical component arranged in the external space and providing laser light to the interferometer,
A second connecting member that connects the optical component and the structure through an opening provided in the partition;
The exposure apparatus according to claim 11, further comprising: a sealing member provided in the opening to maintain airtightness of the internal space. 13. The exposure apparatus according to claim 12, wherein the sealing member is configured to maintain the airtightness of the internal space while connecting the optical component and the partition with low rigidity. Laser light emitted from the optical component is provided to the interferometer arranged in the internal space through a second opening provided in the partition,
The exposure apparatus,
A window member integrated with the optical component,
14. The exposure apparatus according to claim 12, further comprising a second seal member that seals between the second opening and the window member to maintain the airtightness of the internal space. The said 2nd sealing member is comprised so that the said 2nd opening part and the said window member may be connected with low rigidity, and it may be comprised so that the airtightness of the said internal space may be maintained. Exposure equipment. A third connection member that connects a portion of the projection system exposed to the external space and the structure through a third opening provided in the partition;
The exposure apparatus according to any one of claims 11 to 15, further comprising a third seal member provided in the third opening for maintaining the airtightness of the internal space. 17. The apparatus according to claim 1, wherein the measuring device is an interferometer having a reference mirror, and measures a position of the stage using a movable mirror fixed to the stage. Exposure equipment. The exposure apparatus according to any one of claims 1 to 17, wherein the projection system is configured to project a charged particle beam for drawing a pattern on the sample onto the sample. The exposure according to any one of claims 1 to 17, wherein the projection system is configured to project light patterned by an original having a pattern formed on the sample. apparatus. A device manufacturing method for manufacturing a device through a lithography process,
20. A device manufacturing method, comprising a step of forming a pattern on a device using the exposure apparatus according to claim 1.

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