JP2004006278A - Light-emitting device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve problems that uniformity can not be obtained and fluctuations easily occur as deposition precision is inferior and difficult to control, although an ink-jet method known as a method of selectively depositing a high-polymer organic compound can coat different colors of the organic compound emitting three kinds of light (R, G, B) at a time. <P>SOLUTION: This device forms a film consisting of a polymer material on the entire surface of the lower part electrode connected to a thin film transistor by a coating method, and after forming the upper part electrode on it, self-matchingly etches the film consisting of the polymer material by etching with a plasma by having the upper part electrode as a mask, and enables to form selectively a polymer material layer. Furthermore, in connecting the upper part electrode, electric connection is carried out with an adhesive or a paste containing a conductive fine particle. Furthermore, the organic compound layer is made to have a material to emit white light or monochromatic light, and full-colorization is realized by combining with a color conversion layer or a colored layer. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a light-emitting device using a light-emitting element which obtains fluorescence or phosphorescence by applying an electric field to an element provided with a film containing an organic compound between a pair of electrodes, and a method for manufacturing the light-emitting device. Note that a light-emitting device in this specification refers to an image display device, a light-emitting device, or a light source (including a lighting device). Further, a module in which a connector, for example, an FPC (Flexible printed circuit) or TAB (Tape Automated Bonding) tape or a TCP (Tape Carrier Package) is attached to the light emitting device, or a module in which a printed wiring board is provided at the tip of the TAB tape or TCP. Alternatively, all the modules in which an IC (integrated circuit) is directly mounted on a light emitting element by a COG (Chip On Glass) method are included in the light emitting device.
[0002]
[Prior art]
Light-emitting elements using an organic compound having characteristics such as thinness and lightness, high-speed response, and DC low-voltage driving as light-emitting elements are expected to be applied to next-generation flat panel displays. In particular, a display device in which light-emitting elements are arranged in a matrix is considered to be superior to a conventional liquid crystal display device in that the display device has a wide viewing angle and excellent visibility.
[0003]
The light-emitting mechanism of a light-emitting element is such that electrons injected from a cathode and holes injected from an anode emit light in a layer containing an organic compound by applying a voltage across a layer containing the organic compound between a pair of electrodes. It is said that they recombine at the center to form molecular excitons, which emit energy to emit light when the molecular excitons return to the ground state. Singlet excitation and triplet excitation are known as excited states, and light emission is considered to be possible through either excited state.
[0004]
For a light-emitting device formed by arranging such light-emitting elements in a matrix, a driving method such as passive matrix driving (simple matrix type) and active matrix driving (active matrix type) can be used. However, when the pixel density increases, it is considered that an active matrix type in which a switch is provided for each pixel (or one dot) is advantageous because it can be driven at a low voltage.
[0005]
In addition, low-molecular materials and high-molecular (polymer) materials have been studied as organic compounds to be layers containing organic compounds (strictly, light-emitting layers) which can be regarded as the center of light-emitting elements. Attention has been paid to a polymer material that is easier to handle and has higher heat resistance than a system material.
[0006]
In addition, as a method of forming these organic compounds, methods such as an evaporation method, a spin coating method, and an ink jet method are known. As a method for realizing full color using a polymer material, a spin method is used. Coating methods and inkjet methods are particularly well known.
[0007]
However, when the spin coating method is used, since an organic compound is formed on the entire surface of the film, the organic compound is formed only in a portion where the film is desired to be formed, and the film is not formed in a portion where the film is unnecessary. Difficult film formation.
[0008]
Further, in an active matrix light-emitting device, a wiring for inputting an electric signal from an external power supply to a driving circuit formed on a substrate, and a cathode, an anode, and an organic compound formed in a pixel portion are formed. Wiring is formed to electrically connect the light emitting element formed of the layer containing the organic compound to the external power supply, and an organic compound is formed at a connection portion (terminal portion) of the wiring with the external power supply. If it is, ohmic contact with an external power supply cannot be obtained. In particular, when a layer containing an organic compound is formed by spin coating, it is difficult to route an electrode (cathode or anode) provided over the layer containing an organic compound to a terminal portion.
[0009]
[Problems to be solved by the invention]
Therefore, the present invention provides a method for selectively forming a high molecular weight organic compound layer, and electrically connects an electrode (cathode or anode) provided on the organic compound layer to a wiring extending from a terminal portion. Provide a connection structure to be connected.
[0010]
In addition, an ink-jet method known as a method for selectively forming a film of a high molecular weight organic compound can separately apply three types (R, G, B) of organic compounds which emit light at a time. Since the film accuracy is poor and difficult to control, uniformity cannot be obtained, and the film tends to vary. Causes of variations in the inkjet method include variations in nozzle pitch, variations in ink flight bend, accuracy of stage alignment, and variations in timing of ink ejection and stage movement. For example, practical conditions such as clogging of an inkjet nozzle due to internal viscosity resistance of an ink prepared by dissolving an organic compound in a solvent, and ink ejected from the nozzle not landing at a desired position. And a special device having a high-precision stage, an automatic alignment mechanism, an ink head, and the like is required, and the cost is high, and thus there is a problem in practical use. In addition, since ink spreads after landing, a certain margin is required as an interval between adjacent pixels, making it difficult to achieve high definition.
[0011]
Therefore, in the present invention, in an active matrix light-emitting device using a polymer organic compound, a selective method for forming a polymer material layer which is simpler than the case of using an inkjet method is provided, and Another object of the present invention is to simply form a structure in which an organic compound layer is not formed at a connection portion of a wiring connected to an external power supply.
[0012]
In a light-emitting device, in a pixel that does not emit light, incident external light (light outside the light-emitting device) is reflected by the back surface of the cathode (the surface in contact with the light-emitting layer), and the back surface of the cathode acts like a mirror. Then, there was a problem that the outside scene was reflected on the observation surface (the surface facing the observer side). In order to avoid this problem, a circular polarizing film is attached to the observation surface of the light emitting device so that an external scene is not reflected on the observation surface, but the circular polarizing film is very expensive. For this reason, there has been a problem that the manufacturing cost is increased.
[0013]
[Means for Solving the Problems]
According to the present invention, after a film made of a polymer material is formed on the entire surface of a lower electrode (first electrode) by a coating method, an upper electrode (second electrode) is formed by an evaporation mask using an evaporation mask. By using the upper electrode as a mask, a film made of a polymer material is etched in a self-aligning manner by plasma etching to enable selective formation of a polymer material layer.
[0014]
Further, an auxiliary electrode (third electrode) is formed to connect the upper electrode to a wiring extending to the terminal electrode. In addition, the upper electrode may be thinned as long as the film can withstand the etching treatment by plasma, and the resistance may be reduced by an auxiliary electrode formed thereon. The auxiliary electrode may be a metal wiring made of a metal material, or may be a conductive paste (nano paste, hybrid paste, nano metal ink, etc.) or an adhesive containing conductive fine particles.
[0015]
The structure of the invention disclosed in this specification is, as shown in FIGS.
A first electrode, a layer containing an organic compound in contact with the first electrode, and a layer containing the organic compound between a first substrate having an insulating surface and a second substrate having a light-transmitting property; A pixel portion having a plurality of light-emitting elements having a second electrode in contact with the upper portion, a driver circuit, and a terminal portion,
The terminal portion is disposed on the first substrate so as to be located outside the second substrate,
The first substrate and the second substrate are bonded to each other with an adhesive in which a plurality of types of conductive fine particles having different diameters are mixed, and the second electrode and a wiring from a terminal portion are electrically connected to each other. The light-emitting device is characterized by being connected to the light-emitting device.
[0016]
Further, as shown in FIG. 1, an example of another configuration of the invention is as follows.
A first electrode, a layer containing an organic compound in contact with the first electrode, and a layer containing the organic compound between a first substrate having an insulating surface and a second substrate having a light-transmitting property; A pixel portion having a plurality of light-emitting elements having a second electrode in contact with the upper portion, a driver circuit, and a terminal portion,
The terminal portion is disposed on the first substrate so as to be located outside the second substrate,
The first substrate and the second substrate are bonded to each other with an adhesive in which fine particles made of an inorganic material and conductive fine particles having a diameter larger than the fine particles are mixed, and the second electrode, A light-emitting device, wherein a wiring from a terminal portion is electrically connected.
[0017]
In addition, as shown in FIG. 2 and FIG.
A pixel portion including a plurality of light-emitting elements including a first electrode, a layer containing an organic compound in contact with the first electrode, and a second electrode in contact with the layer containing the organic compound, and a terminal portion. A light emitting device having
The end face of the layer containing the organic compound and the end face of the second electrode are coincident,
A feature is provided between the terminal portion and the pixel portion, where the second electrode and a wiring extending from the terminal portion are electrically connected by an adhesive containing conductive particles. It is a light emitting device.
[0018]
The configuration of another invention is shown in FIG.
A pixel portion including a plurality of light-emitting elements including a first electrode, a layer containing an organic compound in contact with the first electrode, and a second electrode in contact with the layer containing the organic compound, and a terminal portion. A light emitting device having
The end face of the layer containing the organic compound and the end face of the second electrode are coincident,
There is provided between the terminal portion and the pixel portion a portion where the second electrode and a wiring extending from the terminal portion are connected by a third electrode covering the second electrode. It is a light emitting device characterized by the following.
[0019]
In the above structure, the third electrode is made of a metal material. In the above structure, the second electrode and the third electrode are a cathode or an anode.
[0020]
In each of the above structures, the second electrode has the same pattern shape as the layer containing the organic compound.
[0021]
In each of the above structures, the layer containing the organic compound is a high molecular material. Alternatively, in each of the above structures, the layer containing the organic compound is a stack of a layer made of a high molecular material and a layer made of a low molecular material.
[0022]
In each of the above structures, an end of the first electrode is covered with an insulator, and has a curved surface having a first radius of curvature at an upper end of the insulator, and a lower end of the insulator. And a curved surface having a second radius of curvature, wherein the first radius of curvature and the second radius of curvature are 0.2 μm to 3 μm.
[0023]
In each of the above structures, the first electrode is a light-transmitting material and is an anode or a cathode of the light-emitting element.
[0024]
In each of the above structures, the layer containing the organic compound is a material that emits white light, and a light-emitting device characterized by being combined with a color filter, or the layer containing the organic compound is a material that emits monochromatic light, The light-emitting device is characterized by being combined with a color conversion layer or a coloring layer.
[0025]
The configuration of the invention for realizing the above structure is shown in FIG.
An anode, a layer containing an organic compound in contact with the anode, and a method for manufacturing a light-emitting device including a light-emitting element having a cathode in contact with the layer containing the organic compound,
Forming a film containing an organic compound made of a polymer material over the first electrode having a light-transmitting property by a coating method;
Selectively forming a second electrode made of a metal material on a film containing the organic compound by an evaporation method of heating an evaporation material;
Etching the layer containing the organic compound in a self-aligned manner by etching with plasma using the second electrode as a mask;
Selectively forming a third electrode made of a metal material to cover the second electrode.
[0026]
In the structure related to the above manufacturing method, the second electrode and the third electrode are a cathode or an anode. In the above structure, the third electrode can be formed by an evaporation method or a sputtering method.
[0027]
Further, the configuration of another invention relating to the manufacturing method is as follows:
An anode, a layer containing an organic compound in contact with the anode, and a method for manufacturing a light-emitting device including a light-emitting element having a cathode in contact with the layer containing the organic compound,
Forming a film containing an organic compound made of a polymer material over the first electrode having a light-transmitting property by a coating method;
Selectively forming a second electrode made of a metal material on a film containing the organic compound by an evaporation method of heating an evaporation material;
Etching the film containing the organic compound in a self-aligned manner by plasma etching using the second electrode as a mask;
A step of connecting the second electrode and a wiring extending from the terminal portion with an adhesive containing conductive particles.
[0028]
Further, the configuration of another invention relating to the manufacturing method is as follows:
An anode, a layer containing an organic compound in contact with the anode, and a method for manufacturing a light-emitting device including a light-emitting element having a cathode in contact with the layer containing the organic compound,
Forming a thin film transistor on the first substrate;
Forming a first electrode connected to the thin film transistor;
Forming a film containing an organic compound made of a polymer material on the first electrode by a coating method;
Selectively forming a second electrode made of a metal material on a film containing the organic compound by an evaporation method of heating an evaporation material;
Etching the layer containing the organic compound in a self-aligned manner by etching with plasma using the second electrode as a mask;
Connecting the second electrode and the wiring extending from the terminal portion with an adhesive containing conductive particles, and simultaneously bonding the first substrate and the second substrate. This is a method for manufacturing a light emitting device.
[0029]
In each of the above structures of the manufacturing method, the plasma is characterized in that one or more kinds of gases selected from Ar, H, F, and O are excited and generated.
[0030]
In each of the above structures of the manufacturing method, the first electrode is an anode or a cathode of the light-emitting element which is electrically connected to a TFT.
[0031]
Note that a light-emitting element (EL element) includes a layer containing an organic compound from which luminescence (Electro Luminescence) generated by application of an electric field is obtained (hereinafter, referred to as an EL layer), an anode, and a cathode. Luminescence in an organic compound includes light emission when returning from a singlet excited state to a ground state (fluorescence) and light emission when returning from a triplet excited state to a ground state (phosphorescence), which are produced by the present invention. The light emitting device can be applied to the case of using either light emission.
[0032]
In the light emitting device of the present invention, a driving method for screen display is not particularly limited, and for example, a dot sequential driving method, a line sequential driving method, a plane sequential driving method, or the like may be used. Typically, a line-sequential driving method is used, and a time-division grayscale driving method or an area grayscale driving method may be used as appropriate. Further, the video signal input to the source line of the light emitting device may be an analog signal or a digital signal, and a drive circuit or the like may be appropriately designed in accordance with the video signal.
[0033]
Further, the conductive paste may be applied by various coating methods (such as a screen printing method, a spin coating method, and a dip coating method), and among them, a nanometal ink can be formed by an inkjet method.
[0034]
BEST MODE FOR CARRYING OUT THE INVENTION
An embodiment of the present invention will be described below.
[0035]
(Embodiment 1)
FIG. 1A is a top view of an active matrix light-emitting device. FIG. 1B is a cross-sectional view taken along a dotted line XX ′ in FIG. Here, the light-emitting element 23 having a laminated structure made of a polymer material that emits white light will be described as an example.
[0036]
1A and 1B, a plurality of TFTs (gate-side drive circuits 14 and 15 and source-side drive circuit 13) are provided in a pixel portion 12 and a driver circuit (gate-side driver circuits 14 and 15) provided over a substrate having an insulating surface. (Not shown). In addition. The TFT provided in the pixel portion 12 is an element for controlling a current flowing through the EL layer 10 that emits light, and is connected to the first electrode 19 and the power supply line 16.
[0037]
In the pixel portion 12, a plurality of light emitting elements 23 each including a first electrode 19, a second electrode 11, and a layer 10 containing an organic compound sandwiched between these electrodes are arranged. One electrode 19 is regularly arranged. The first electrode 19 is an anode (or cathode) of the organic light emitting device, and 11 is a second electrode, that is, a cathode (or anode) of the organic light emitting device. When a light-transmitting conductive material is used for the second electrode 11 and a metal material is used for the first electrode 19, light from the light-emitting element 23 can be extracted through a sealing material. On the other hand, when a light-transmitting conductive material is used for the first electrode 19 and a metal material is used for the second electrode, light can be extracted in the opposite direction. In the configuration shown in FIG. 1, light can be extracted in either direction. However, when light from the light emitting element 23 is passed through a sealing material to be extracted, the light is transmitted as the sealing material 20 and the conductive adhesive 22. It is essential to have the property.
[0038]
The layer 10 containing an organic compound has a laminated structure. Typically, a stacked structure of a hole transport layer / a light emitting layer / an electron transport layer on the anode is given. This structure has a very high luminous efficiency, and most light-emitting devices currently under research and development adopt this structure. In addition, a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer, or a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer / an electron injection layer are stacked in this order on the anode. The structure is also good. The light emitting layer may be doped with a fluorescent dye or the like. Further, these layers may be formed entirely using a low molecular material, or may be formed entirely using a high molecular material. In this specification, all layers provided between the cathode and the anode are collectively referred to as a layer containing an organic compound (EL layer). Therefore, the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer are all included in the EL layer. The layer containing an organic compound (EL layer) may also contain an inorganic material such as silicon.
[0039]
Both ends of the first electrode 19 and the space between them are covered with an organic insulator 18 (also called a barrier or a bank). Further, the organic insulator 18 may be covered with an inorganic insulating film.
[0040]
A terminal electrode is formed in the terminal portion, and has a connection wiring 17 extending from the terminal electrode. The connection wiring 17 is electrically connected to the second electrode 11 with an adhesive 22 having conductivity. In addition, since the organic compound layer is etched in a self-aligned manner using the second electrode 11 as a mask, the end faces of the second electrode 11 and the organic compound layer 10 coincide with each other, and the adhesive 22 having conductivity is brought into contact with the end face. Is provided. The conductive adhesive 22 includes conductive fine particles 22b such as silver particles and copper particles and a spacer 22a, and further seals the light emitting element 23 by bonding the sealing material 20 thereto. Further, as the conductive adhesive 22, a thermosetting resin may be used, or an ultraviolet curable resin may be used. However, when a thermosetting resin is used as the conductive adhesive 22, it is necessary to appropriately select a material having a sintering temperature in a range where the layer 10 containing an organic compound is not deteriorated. Needs to use a light-transmitting material as a sealing material.
[0041]
Further, the spacer 22a may be made of an inorganic insulating material or an organic insulating material, and a plurality of types having different particle sizes may be used. If the spacer 22a is made of an inorganic insulating material coated with a low-resistance metal film such as gold (for example, conductive fine particles having a uniform particle diameter, the surface of which is uniformly plated with gold), this material can be used. The spacer can be called conductive fine particles.
[0042]
FIG. 1 shows an example in which the diameter of the conductive fine particles 22b is larger than the diameter of the spacer 22a. A large particle size is made of an elastic organic material having a surface coated with a metal film, and a small particle size is made of an inorganic material. Surface contact may be made. FIG. 22 shows an example in which the diameter of the conductive fine particles 1022b is smaller than the diameter of the spacer 1022a. In FIG. 22, since it is sufficient that the electrical connection can be performed by being present at the connection portion between the second electrode 11 and the connection wiring 17, the conductive fine particles 1022 b need not be uniformly distributed in the conductive adhesive 1022. Instead, it is only necessary to be close to the vicinity of the second electrode 11 and the connection wiring 17 by gravity.
[0043]
In addition, when the conductive adhesive 22 is used, the light emitting element 23 is sealed by bonding the sealing material 20 and the electrical connection between the connection wiring 17 and the second electrode 11 is simultaneously performed. And the throughput can be improved.
[0044]
FIG. 1 shows an example in which the conductive adhesive 22 is formed on the entire surface so as to cover the pixel portion. However, the present invention is not particularly limited, and may be partially formed. Alternatively, a laminate of a material layer containing conductive fine particles such as a silver paste, a copper paste gold paste, and a Pd paste and an adhesive containing a spacer and a filler may be used. In the case of lamination, after the electrical connection between the connection wiring 17 and the second electrode 11 is first performed by forming a material layer containing conductive fine particles, an adhesive containing a spacer or a filler is used. The light emitting element 23 is sealed by bonding the sealing material 20.
[0045]
Further, a sealing material 20 is attached by a spacer or a filler so as to keep an interval of about 2 to 30 μm, and all the light emitting elements are sealed. Although not shown here, a concave portion is formed in the sealing material 20 by a sand blast method or the like, and a desiccant is disposed in the concave portion. Immediately before the sealing material 20 is attached, it is preferable to perform annealing in a vacuum to perform degassing. When the sealing material 20 is attached, it is preferable that the sealing material 20 be attached in an atmosphere containing an inert gas (a rare gas or nitrogen).
[0046]
When the electrical resistivity of the conductive adhesive is relatively high, an electrode is formed on the sealing material 20 in advance, and the adhesive is electrically connected to the conductive adhesive 22 at the time of bonding. The resistance may be reduced by connecting them. In this case, it is preferable to use an inorganic insulating material coated with a low-resistance metal film such as gold as the spacer 22a, and to maintain the distance between the sealing material 20 and the spacer 22a at the same time as the second electrode 11 And an electrode on the sealing material 20, and an electrical connection between the connection wiring 17 and the electrode on the sealing material 20. When a plurality of types having different particle diameters are used, a material having a large particle size is used as an elastic organic material, and a material having a small particle size is used as an inorganic material. May be brought into surface contact with the electrode on the sealing material 20 by deforming the material.
[0047]
(Embodiment 2)
Here, FIG. 2 shows a configuration example different from FIG. 1 in which a conductive adhesive is formed over a large area. For simplification, in FIG. 2, the same parts as those in FIG. 1 are used. In FIG. 2, since the structure up to the second electrode 11 is the same as that of FIG. 1, detailed description is omitted here.
[0048]
In the present embodiment, an example is shown in which the conductive material 32 is partially formed and the sealant 31 is separately formed. The conductive material 32 electrically connects the connection wiring 17 to the second electrode 11. Since the layer containing the organic compound is etched in a self-aligned manner using the second electrode 11 as a mask, the end faces of the second electrode 11 and the layer 10 containing the organic compound coincide with each other. Is provided.
[0049]
In FIG. 2, as the conductive material 32, a conductive paste represented by a silver paste or a copper paste, a conductive ink, or a nano metal ink (Ag, Au, and Pd having a particle size of 5 to 10 nm are dispersed at a high concentration without agglomeration. Independently dispersed ultrafine particle dispersion). For example, as the conductive material 32, the main component is silver-plated copper powder, phenol resin, dimethylene glycol monomethyl ether, or the like, and has a specific resistance of 5 × 10 ^-4 Ω · cm or less, adhesive strength 0.8kg / mm ² The above may be used. Further, as the conductive material 32, a quick-drying silver-based conductive agent (a modified polyolefin resin containing flat silver powder having a particle size of 0.5 to 1 μm) may be used.
[0050]
When a solvent is used as the conductive material 32, vapor is generated by heat and contamination of a layer containing an organic compound is concerned. However, the present invention provides a sealing material between the conductive material 32 and the pixel portion 12. The provision of 31 prevents contamination of the layer containing the organic compound. Therefore, it is preferable to form the conductive material 32 after forming the sealing material 31 and bonding the sealing material 20 to the sealing material 20. The order of forming the sealant 31 and the conductive material 32 is not particularly limited. After the conductive material 32 is formed, the sealant 31 may be formed and bonded to the sealing material 20.
[0051]
A filler is mixed in the sealing material 31, and the sealing material 20 is attached with a uniform interval by the filler. Further, a spacer may be mixed in addition to the filler. Further, as shown in FIG. 2A, the sealant 31 may be formed so as to partially overlap the gate side drive circuits 14 and 15.
[0052]
In addition, light can be extracted from the light emitting element 23 in either direction in the configuration shown in FIG. In addition, in the configuration of FIG. 2, since there is no conductive material above the pixel portion, when light from the light-emitting element 23 is extracted through a sealing material, an opaque material may be used as the conductive material. The sealing material 20 has translucency.
[0053]
This embodiment can be freely combined with Embodiment 1.
[0054]
(Embodiment 3)
Here, FIG. 3 shows a configuration example different from FIGS. 1 and 2 in which a sealing material is attached. For simplification, in FIG. 3, the same parts as those in FIG. 1 are used. In FIG. 3, since the structure up to the second electrode 11 is the same as that of FIG. 1, detailed description is omitted here.
[0055]
In this embodiment mode, an example is shown in which the conductive material 42 is partially formed and sealed with a protective film. The conductive material 42 electrically connects the connection wiring 17 to the second electrode 11. Since the layer containing the organic compound is etched in a self-aligned manner using the second electrode 11 as a mask, the end faces of the second electrode 11 and the layer 10 containing the organic compound coincide with each other. Is provided.
[0056]
Similar to the conductive material 32 shown in the second embodiment, as the conductive material 42 in FIG. 3, a conductive paste or a conductive ink represented by a silver paste or a copper paste is used. Alternatively, a nanometal ink capable of forming a pattern by an ink-jet method (independently dispersed ultrafine particle dispersion in which Ag, Au, and Pd having a particle diameter of 5 to 10 nm are dispersed at a high concentration without agglomeration) may be used as the conductive material 42. Good. The nanometal ink is fired at 220C to 250C.
[0057]
After forming the conductive material 42, the protective film 41 is formed. The protective film 41 is an insulating film mainly containing silicon nitride or silicon nitride oxide obtained by a sputtering method (DC method or RF method) or a thin film mainly containing carbon obtained by a PCVD method. When a silicon target is formed in an atmosphere containing nitrogen and argon, a silicon nitride film can be obtained. Further, a silicon nitride target may be used. Further, the protective film 41 may be formed by using a film forming apparatus using remote plasma. When light emission is allowed to pass through the protective film, the thickness of the protective film is preferably as small as possible.
[0058]
In the present invention, the thin film containing carbon as a main component is a DLC film (Diamond like Carbon) having a thickness of 3 to 50 nm. The DLC film has a short-range order as a bond between carbons, SP ³ Although it has a bond, it has an amorphous structure macroscopically. The DLC film has a composition of 70 to 95 atomic% of carbon and 5 to 30 atomic% of hydrogen, and is very hard and excellent in insulating properties. Such a DLC film is also characterized by a low gas permeability of water vapor and oxygen. Moreover, it is known that it has a hardness of 15 to 25 GPa as measured by a micro hardness tester.
[0059]
The DLC film can be formed by a plasma CVD method (typically, an RF plasma CVD method, a microwave CVD method, an electron cyclotron resonance (ECR) CVD method, or the like), a sputtering method, or the like. With any of the film forming methods, a DLC film can be formed with good adhesion. The DLC film is formed by placing the substrate on the cathode. Alternatively, a dense and hard film can be formed by applying a negative bias and utilizing ion bombardment to some extent.
[0060]
The reaction gas used for the film formation is a hydrogen gas and a hydrocarbon-based gas (eg, CH 2 ₄ , C ₂ H ₂ , C ₆ H ₆ And ionization is performed by glow discharge, and ions are accelerated and collided with a negatively biased cathode to form a film. By doing so, a dense and smooth DLC film can be obtained. The DLC film is an insulating film that is transparent or translucent to visible light. In the present specification, “transparent to visible light” means that the transmittance of visible light is 80 to 100%, and “translucent to visible light” means that the transmittance of visible light is 50 to 80%. Refers to
[0061]
In the case where a silicon nitride film is formed in contact with a film made of a transparent conductive film by a sputtering method, impurities (In, Sn, Zn, and the like) contained in the transparent conductive film may be mixed into the silicon nitride film. By forming a silicon oxide film to be a layer therebetween, impurities can be prevented from being mixed into the silicon nitride film. By forming the buffer layer with the above structure, the entry of impurities (In, Sn, and the like) from the transparent conductive film can be prevented, and an excellent protective film without impurities can be formed.
[0062]
Further, after the protective film is formed, a sealing material may be formed and attached to the sealing material in order to further enhance the sealing property.
[0063]
This embodiment can be freely combined with Embodiment 1 or Embodiment 2.
[0064]
(Embodiment 4)
Here, a procedure for forming the light-emitting element will be briefly described below with reference to FIGS. For simplification, in FIG. 4, the same portions as those in FIG. 1 are used.
[0065]
First, a TFT (not shown), a first electrode 19, a connection wiring 17, and an insulator 18 are formed on a substrate, and a layer 10 containing an organic compound is formed by a coating method using spin coating. And firing by vacuum heating. (FIG. 4A) When a layer containing an organic compound is stacked, film formation and baking may be repeated.
[0066]
Next, the second electrode 11 made of a metal material is selectively formed by an evaporation method using the evaporation mask 50. (FIG. 4B) Although FIG. 4B shows an example in which vapor deposition is performed in a state where the distance between the metal mask and the layer containing an organic compound is widened, the vapor deposition may be performed in a state in which the layers are in contact with each other.
[0067]
Next, the layer containing an organic compound is etched in a self-aligned manner using the second electrode 11 as a mask. Here, selective etching is performed using plasma generated by exciting one or more kinds of gases selected from Ar, H, F, and O. (FIG. 4C) However, it is important to appropriately select a material or a film thickness with which the second electrode 11 withstands plasma. According to the present invention, by selectively forming a polymer material layer, a structure in which a layer containing an organic compound is not formed at a connection portion of a wiring connected to an external power supply can be easily formed. .
[0068]
By the steps up to this point, the state shown in FIG. 4C is obtained. In this state, the second electrode 11 is not connected to anywhere and is in a floating state. Therefore, the connection wiring 17 is electrically connected in a later step. As a method for electrically connecting the second electrode 11 to the connection wiring 17, the conductive adhesive 22 described in the first embodiment may be used, or the second embodiment and the second embodiment may be used. The conductive materials 32 and 42 shown in FIG.
[0069]
In this embodiment mode, a third electrode 51 made of a low-resistance metal material is formed as a method for electrically connecting the second electrode 11 to the connection wiring 17. (FIG. 5B) Note that FIG. 5A shows a top view up to this point.
[0070]
The third electrode 51 may be formed as appropriate by a sputtering method, an evaporation method, or a PCVD method, and it is preferable to use a metal material having a lower electrical resistivity than the material of the second electrode 11. For example, as the third electrode 51, poly-Si, W, WSi doped with an impurity element imparting a conductivity type is used. _X , Al, Ti, Mo, Cu, Ta, Cr, or Mo, or a film mainly composed of an alloy material or a compound material mainly composed of the element, or a laminated film thereof. And Here, the third electrode 51 is an electrode made of a laminate (specifically, a laminate of TiN, Al, and TiN) having a nitride layer or a fluoride layer as the uppermost layer. Therefore, light from the light-emitting element is extracted through the first electrode 19.
[0071]
In addition, the same material as the second electrode 11 may be used for the third electrode 51. In this case, the thickness of the third electrode 51 is set to be larger than that of the second electrode 11 to reduce the resistance. Is preferred. When the same material as the second electrode 11 is used for the third electrode 51, the thickness of the second electrode 11 can be further reduced.
[0072]
In the steps after the formation of the third electrode 51, a light-emitting element may be sealed by forming a protective film or attaching a sealing material.
[0073]
The cross-sectional shape of the insulator 18 made of an organic material shown in FIG. 5B is important and will be described below. In the case where an organic compound film is formed over the insulator 18 by a coating method or a metal film to be a cathode is formed by an evaporation method, the insulator 18 does not have a curved surface at a lower end portion or an upper end portion. As shown in FIG. 18, a film formation defect in which a protrusion is formed at the upper end of the insulator 18 occurs. In view of this, the present invention has a curved surface having a first radius of curvature at the upper end of the insulator 18 and a second radius of curvature at the lower end of the insulator 18 as shown in FIGS. It is characterized by having a shape having a curved surface having It is preferable that both the first radius of curvature and the second radius of curvature be 0.2 μm to 3 μm. According to the present invention, coverage of an organic compound film or a metal film can be improved, and a defect called a shrink in which a light emitting region is reduced can be reduced. Further, by forming a silicon nitride film or a silicon nitride oxide film over the insulating film 18, shrinkage can be reduced. Further, the taper angle on the side surface of the insulator 18 may be 45 ° ± 10 °.
[0074]
As the insulator 18, an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, or the like), a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist, or benzocyclobutene), or a mixture thereof is used. Although a laminate or the like can be used, the insulator 18 has a curved surface having a first radius of curvature as shown in FIGS. 17 and 5B, and further has a second curved surface at the lower end of the insulator 18. When it is desired to have a shape having a curved surface having a radius of curvature of, a photosensitive organic material is easily used. As the insulator 18, either a negative type which becomes insoluble in an etchant by photosensitive light or a positive type which becomes soluble in an etchant by light can be used.
[0075]
FIG. 21 shows an example in which a protective film 70 made of a silicon nitride film is formed over an insulator 68 and the pattern of the insulator is different from the pattern of the silicon nitride film. 21A shows a top view at a stage where the layer including an organic compound is formed up to a layer 60 for simplification, and FIG. 21B shows a cross-sectional view taken along a solid line AA ′. FIG. 21C shows a cross-sectional view taken along the solid line BB ′. In the cross-sectional view illustrated in FIG. 21B, the insulator 68 does not exist between the adjacent first electrodes 69. In FIG. 21A, the pattern shape of the insulator 68 is a stripe shape, and the pattern of the silicon nitride film serving as the protective film 70 is a region shown by a dotted line. It has a lattice shape that covers only the part. By forming the insulator 68 in a stripe shape, particles and impurities can be more easily removed when the surface of the first electrode 69 is wet-cleaned (cleaned) than in a lattice shape. In FIG. 21, a region of the pixel portion 62 that is not covered with the protective film 70 is a light emitting region.
[0076]
Further, as the protective film 70, a silicon nitride oxide film or AlN is used instead of the silicon nitride film. _X O _Y May be used. In addition, AlN _X O _Y May be formed by introducing oxygen, nitrogen, or a rare gas from the gas introduction system by a sputtering method using a target made of AlN or Al. AlN _X O _Y It is sufficient that nitrogen is contained in the layer represented by at least several atm%, preferably 2.5 atm% to 47.5 atm%, and oxygen is 47.5 atm% or less, preferably 0.01 to less than 20 atm%. I just need.
[0077]
By forming the protective film 70 on the insulator 68, the uniformity of the film thickness of the layer 60 containing an organic compound is improved, heat generation due to electric field concentration generated during light emission can be suppressed, and a light-emitting region is reduced by a shrink. The deterioration of the light emitting element can be prevented.
[0078]
This embodiment can be freely combined with any one of Embodiments 1 to 3.
[0079]
The present invention having the above configuration will be described in more detail with reference to the following embodiments.
[0080]
(Example)
[Example 1]
In this embodiment, a structure in which light emitted from the EL element is transmitted through the element substrate and emitted to be seen by an observer will be described below. In this case, the observer can recognize the image from the element substrate side.
[0081]
First, a pixel structure in which three TFTs are arranged in one pixel will be described. FIG. 6 shows an example of a detailed top view of the pixel.
[0082]
In the configuration shown in FIG. 6, an erasing transistor 606 for SES driving is provided, a gate electrode is connected to a second gate signal line 603 for inputting an erasing signal, and a source electrode and a current supply line 604 are connected. The drain electrode of the switching TFT 605 and the gate electrode of the driving TFT 607 are connected.
[0083]
In the case of a three-transistor type, two TFTs, a switching TFT 605 and an erasing TFT 606, are arranged side by side between the first gate signal line 602 and the second gate signal line 603, and are linearly arranged. The drain region of the switching TFT 605 and the drain region of the erasing TFT 606 may overlap. At this time, one point of the source region and one point of the drain region of the switching TFT 605 and one point of the source region and one point of the drain region of the erasing TFT 606 are arranged on one straight line.
[0084]
By arranging as described above, the aperture ratio can be increased, and the opening can be formed in a simple shape.
[0085]
FIG. 6B shows a cross section between α-α ′ in FIG. The semiconductor layer 614 may meander in the vertical direction like the driving TFT 607. With the semiconductor layer 614 having such a shape, the channel length L of the driving TFT 607 can be further increased without reducing the aperture ratio. Note that a TFT having a plurality of channels may be used as the driving TFT 607 in order to reduce the off-state current value. Further, it is preferable that the channel length L of the driving TFT 607 be 100 μm or more. When the channel length L is increased, the oxide film capacitance C _OX Therefore, a part of the capacity can be used as a storage capacity of the organic light emitting element. Conventionally, a space for forming a storage capacitor is required to form a storage capacitor for each pixel, and a capacitor line and a capacitor electrode have been provided. Can be omitted. Also, the oxide film capacitance C _OX When the storage capacitor is formed by using the above, the storage capacitor is formed of a gate electrode using the gate insulating film as a dielectric, and a semiconductor that overlaps the gate electrode via the gate insulating film. Therefore, even if the channel length of the TFT is increased, as shown in FIG. 6, the semiconductor layer of the driving TFT 607 connected to the pixel electrode 608 is not connected to the current supply line 604 or the source signal line 601 disposed above the gate electrode. By arranging it below, it is possible to design a pixel without lowering the aperture ratio. That is, with the pixel structure illustrated in FIG. 6, a sufficient storage capacitor can be provided even when a space for forming a capacitor electrode and a capacitor wiring is omitted, and the aperture ratio can be further increased. Further, when the channel length L is increased, even if there is a variation in the TFT manufacturing process such as a laser light irradiation condition, it is possible to reduce variation in electrical characteristics between the TFTs.
[0086]
FIG. 8 illustrates an external view of an active matrix light-emitting device.
Note that FIG. 8A is a top view illustrating the light-emitting device, and FIG. 8B is a cross-sectional view of FIG. 8A taken along AA ′. Reference numeral 901 shown by a dotted line denotes a source signal line driving circuit, 902 denotes a pixel portion, and 903 denotes a gate signal line driving circuit. Reference numeral 904 denotes a sealing substrate, 905 denotes a sealant, and an inside surrounded by the sealant 905 is a space 907.
[0087]
Note that reference numeral 908 denotes wiring for transmitting signals input to the source signal line driver circuit 901 and the gate signal line driver circuit 903. receive. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC. The light-emitting device in this specification includes not only the light-emitting device body but also a state in which an FPC or a PWB is attached thereto.
[0088]
Next, a cross-sectional structure is described with reference to FIG. A driver circuit and a pixel portion are formed over a substrate 910; here, a source signal line driver circuit 901 and a pixel portion 902 are illustrated as the driver circuits.
[0089]
Note that as the source signal line driver circuit 901, a CMOS circuit in which an n-channel TFT 923 and a p-channel TFT 924 are combined is formed. Further, the driving circuit may be formed by a known CMOS circuit, PMOS circuit, or NMOS circuit. In this embodiment mode, a driver-integrated type in which a driver circuit is formed over a substrate is shown; however, this is not always necessary, and the driver circuit can be formed outside instead of on the substrate.
[0090]
The pixel portion 902 is formed of a plurality of pixels including a switching TFT 911, a current control TFT 912, and a first electrode (anode) 913 electrically connected to a drain thereof.
[0091]
In addition, an insulating layer 914 is formed at both ends of the first electrode (anode) 913, and a layer 915 containing an organic compound is formed over the first electrode (anode) 913. Further, a second electrode (cathode) 916 having the same pattern shape and having the same end face is formed over the layer 915 containing an organic compound. Thus, a light-emitting element 918 including the first electrode (anode) 913, the layer 915 containing an organic compound, and the second electrode (cathode) 916 is formed. Here, since the light-emitting element 918 emits white light, a color filter including a colored layer and a BM (not illustrated here for simplicity) is provided on the substrate 910.
[0092]
Here, the third electrode 917 described in Embodiment 4 is formed in order to electrically connect the second electrode 916 to the connection wiring 908. The third electrode 917 in contact with the second electrode 916 and the connection wiring 908 also functions as a wiring common to all pixels, and is electrically connected to the FPC 909 via the connection wiring 908.
[0093]
In addition, a sealing substrate 904 is attached with a sealant 905 to seal the light-emitting element 918 formed over the substrate 910. Note that a spacer formed of a resin film may be provided in order to secure an interval between the sealing substrate 904 and the light-emitting element 918. The space 907 inside the sealant 905 is filled with an inert gas such as nitrogen. Note that an epoxy resin is preferably used as the sealant 905. Further, it is desirable that the sealant 905 is a material that does not transmit moisture or oxygen as much as possible. Further, a substance having an effect of absorbing oxygen or water may be contained in the space 907.
[0094]
In this embodiment, a plastic substrate made of FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), mylar, polyester, acrylic, or the like is used as a material of the sealing substrate 904 in addition to a glass substrate or a quartz substrate. be able to. Further, after the sealing substrate 904 is bonded with the sealing agent 905, the sealing substrate 904 can be sealed with a sealing agent so as to further cover the side surface (exposed surface).
[0095]
By enclosing the light-emitting element in the space 907 as described above, the light-emitting element can be completely shielded from the outside, and a substance which promotes deterioration of a layer containing an organic compound such as moisture or oxygen from entering from the outside can be prevented. Can be prevented. Therefore, a highly reliable light-emitting device can be obtained.
[0096]
FIG. 7 shows an example of a manufacturing process of the above structure.
[0097]
FIG. 7A is a cross-sectional view at a stage where a second electrode (a cathode made of Li-Al) is selectively formed by an evaporation mask after forming an organic compound film (a laminate including PEDOT) by a coating method. is there. Note that, for simplicity, a method for manufacturing an anode or a TFT made of a transparent conductive film is omitted here.
[0098]
Next, FIG. 7B is a cross-sectional view at a stage where the organic compound film (the laminate including PEDOT) is etched by plasma in a self-aligned manner using the second electrode as a mask.
[0099]
Next, FIG. 7C is a cross-sectional view at a stage where a third electrode for connecting to a connection wiring is selectively formed. Note that the second electrode and the third electrode may be the same material, or a material having a lower electric resistivity may be used for the third electrode.
[0100]
Further, in this embodiment, an example was described in which a method combining a white light emitting element and a color filter (hereinafter, referred to as a color filter method) was used. Hereinafter, a method for forming a white light-emitting element to obtain a full-color display will be described with reference to FIG.
[0101]
The color filter method is a method in which a light-emitting element having an organic compound film which emits white light is formed, and red, green, and blue lights are obtained by passing the obtained white light through a color filter.
[0102]
There are various methods for obtaining white light emission. Here, the case of using a light emitting layer made of a polymer material that can be formed by coating will be described. In this case, the doping of the polymer material to be the light emitting layer with the dye can be performed by adjusting the solution, and can be obtained extremely easily as compared with a vapor deposition method in which a plurality of dyes are co-deposited.
[0103]
Specifically, a poly (ethylenedioxythiophene) / poly (styrenesulfone) acting as a hole injection layer is formed on an anode made of a metal (Pt, Cr, W, Ni, Zn, Sn, In) having a large work function. Acid) aqueous solution (PEDOT / PSS) is applied over the entire surface and baked to form a film containing PEDOT, and then the luminescent center dye (1,1,4,4-tetraphenyl-1,3-butadiene) acting as a luminescent layer (TPB), 4-dicyanomethylene-2-methyl-6- (p-dimethylamino-styryl) -4H-pyran (DCM1), Nile Red, Coumarin 6, etc.)-Doped polyvinyl carbazole (PVK) solution is applied on the entire surface After firing, a thin film containing a metal (Li, Mg, Cs) having a small work function and a transparent conductive film (ITO (indium oxide oxide) Alloy), indium oxide-zinc oxide alloy (In ₂ O ₃ (ZnO), zinc oxide (ZnO), etc.). Note that PEDOT / PSS uses water as a solvent and does not dissolve in an organic solvent. Therefore, when PVK is applied from above, there is no need to worry about re-dissolving. Since PEDOT / PSS and PVK have different solvents, it is preferable not to use the same film forming chamber.
[0104]
In the above example, an example in which layers including an organic compound are stacked as illustrated in FIG. 9B is described; however, a layer including an organic compound can be a single layer as illustrated in FIG. 9A. . For example, a 1,3,4-oxadiazole derivative (PBD) having an electron transporting property may be dispersed in polyvinyl carbazole (PVK) having a hole transporting property. Further, white light emission can be obtained by dispersing 30 wt% of PBD as an electron transporting agent and dispersing an appropriate amount of four kinds of dyes (TPB, coumarin 6, DCM1, and Nile Red).
[0105]
Note that the organic compound film is formed between the anode and the cathode, and the holes injected from the anode and the electrons injected from the cathode recombine in the organic compound film, so that the organic compound film emits white light. Is obtained.
[0106]
Alternatively, white light emission can be obtained as a whole by appropriately selecting an organic compound film emitting red light, an organic compound film emitting green light, and an organic compound film emitting blue light and overlapping and mixing colors.
[0107]
The organic compound film formed as described above can obtain white light emission as a whole.
[0108]
A color provided with a colored layer (R) that absorbs light other than red light emission, a colored layer (G) that absorbs light other than green light, and a colored layer (B) that absorbs light other than blue light in the direction in which the organic compound film emits white light. By forming the filter, white light emission from the light-emitting element can be separated into red light emission, green light emission, and blue light emission. In the case of an active matrix type, a structure is employed in which a TFT is formed between a substrate and a color filter.
[0109]
For the colored layers (R, G, B), a diagonal mosaic arrangement, a triangular mosaic arrangement, an RGBG four-pixel arrangement, an RGBW four-pixel arrangement, or the like can be used, including the simplest stripe pattern.
[0110]
FIG. 15 shows an example of the relationship between the transmittance and the wavelength of each colored layer using a white light source (D65). The coloring layer constituting the color filter is formed using a color resist made of an organic photosensitive material in which a pigment is dispersed. FIG. 16 shows chromaticity coordinates of a color reproduction range when white light emission and a color filter are combined. The chromaticity coordinates of white light emission are (x, y) = (0.34, 0.35). FIG. 16 shows that the color reproducibility as a full color is sufficiently ensured.
[0111]
Note that, in this case, even if the obtained luminescent colors are different, it is not necessary to separately form the organic compound film for each luminescent color because all of the luminescent colors are formed of organic compound films which emit white light. In addition, a circularly polarizing plate for preventing specular reflection may not be particularly required.
[0112]
Next, a CCM method (color changing media) realized by combining a blue light emitting element having a blue light emitting organic compound film and a fluorescent color conversion layer will be described with reference to FIG.
[0113]
The CCM method excites a fluorescent color conversion layer with blue light emitted from a blue light emitting element, and performs color conversion in each color conversion layer. More specifically, the color conversion layer converts blue to red (B → R), the color conversion layer converts blue to green (B → G), and the color conversion layer converts blue to blue (B → B). ) (The conversion from blue to blue need not be performed) to obtain red, green, and blue light emission. Also in the case of the CCM method, in the case of the active matrix type, a TFT is formed between the substrate and the color conversion layer.
[0114]
In this case, it is not necessary to separately form the organic compound film. In addition, a circularly polarizing plate for preventing specular reflection may not be particularly required.
[0115]
Further, when the CCM method is used, since the color conversion layer is fluorescent, it is excited by external light, which causes a problem of lowering contrast. For this reason, a color filter is attached as shown in FIG. And increase the contrast. FIG. 10C illustrates an example in which a white light-emitting element is used; however, a blue light-emitting element may be used.
[0116]
Further, as shown in FIG. 9C, white light emission can be obtained even when a layer including a high molecular material and a layer including a low molecular material are stacked as a layer containing an organic compound. When white light emission is to be performed by stacking, after a polymer material to be a hole injection layer is formed by a coating method, co-evaporation is performed by an evaporation method to transport a dye having a different emission color from the light emission in the light emitting region. The layer may be doped so as to be mixed with the color of light emitted from the light emitting region. By appropriately adjusting the materials of the light emitting layer and the hole transport layer, white light emission can be obtained as a whole.
[0117]
In addition, the present invention, in which a layer containing an organic compound made of a polymer material is etched in a self-aligned manner by plasma using an electrode as a mask, is not limited to white light emission, and at least one layer of a polymer material is used as a layer containing an organic compound. It can be applied to a light emitting element.
[0118]
FIG. 11 illustrates an example of a stacked structure of a light-emitting element.
[0119]
In the stacked structure illustrated in FIG. 11A, a layer 702a including a first organic compound including a high molecular material and a layer 702b including a second organic compound including a low molecular material are provided over an anode 701. A layer 702 containing an organic compound which is a stack, a cathode buffer layer 703, and a cathode 704 are formed. By appropriately setting the material and thickness of these layers sandwiched between the cathode and the anode, red, green, and blue light-emitting elements can be obtained.
[0120]
To obtain a red light-emitting element, as shown in FIG. 11B, PEDOT / PSS, which is a polymer material, is applied on an anode made of ITO by spin coating, and baked by vacuum baking to have a film thickness of 30 nm. I do. Next, 4,4′-bis [N- (1-naphthyl) -N-phenyl-amino] -biphenyl (hereinafter referred to as α-NPD) is formed to a thickness of 60 nm by an evaporation method. Next, tris (8-quinolinolato) aluminum containing DCM as a dopant (hereinafter referred to as Alq ₃ Is formed to a thickness of 40 nm by an evaporation method. Then, Alq ₃ Is formed to a thickness of 40 nm. Then, CaF ₂ Is formed to a thickness of 1 nm by an evaporation method, and finally Al is formed to a thickness of 200 nm by a sputtering method or an evaporation method to complete a red light emitting element.
[0121]
To obtain a green light-emitting element, as shown in FIG. 11C, PEDOT / PSS, which is a polymer material, is applied on an anode made of ITO by spin coating, and baked by vacuum baking to form a film. 30 nm. Next, α-NPD is formed to a thickness of 60 nm by an evaporation method. Next, Alq containing DMQD as a dopant ₃ Is formed to a thickness of 40 nm by co-evaporation. Then, Alq ₃ Is formed to a thickness of 40 nm. Then, CaF ₂ Is formed to a thickness of 1 nm by an evaporation method, and finally, Al is formed to a thickness of 200 nm by a sputtering method or an evaporation method to complete a green light emitting element.
[0122]
To obtain a blue light-emitting element, as shown in FIG. 11D, a polymer material PEDOT / PSS is applied on an anode made of ITO by spin coating, and baked by vacuum baking to form a film. 30 nm. Next, α-NPD is formed to a thickness of 60 nm by an evaporation method. Next, bathocuproine (hereinafter, referred to as BCP) as a dopant is formed to a thickness of 10 nm by an evaporation method. Then, Alq ₃ Is formed to a thickness of 40 nm. Then, CaF ₂ Is formed to a thickness of 1 nm by vapor deposition, and finally Al is formed to a thickness of 200 nm by sputtering or vapor deposition to complete a blue light-emitting element.
[0123]
When the colored light emitting elements (R, G, B) are formed, it is not necessary to provide a color filter, but they may be provided to increase color purity.
[0124]
This embodiment can be freely combined with any of Embodiment Modes 1 to 4.
[0125]
[Example 2]
In this embodiment, FIG. 12 shows an example of a multi-chamber manufacturing apparatus in which manufacturing from light-emitting element formation to sealing is fully automated.
[0126]
12, 100a to 100k, 100m to 100w are gates, 101 is a preparation room, 119 is an extraction room, 102, 104a, 108, 114, and 118 are transfer rooms, 105, 107, and 111 are delivery rooms, 106R and 106B, 106G, 106H, 106E, 109, 110, 112, and 113 are a film formation chamber, 103 is a pretreatment chamber, 117 is a sealing substrate load chamber, 115 is a dispenser chamber, 116 is a sealing chamber, 120a and 120b are cassette chambers, 121 is a tray mounting stage, and 122 is an etching chamber by plasma.
[0127]
First, a plurality of TFTs, a transparent conductive film (ITO (indium oxide tin oxide alloy), an indium oxide zinc oxide alloy (In ₂ O ₃ Poly (ethylenedioxythiophene) acting as a hole-injection layer over a substrate provided with an anode (first electrode) made of ZnO), zinc oxide (ZnO) or the like, and an insulator covering an end of the anode. ) / Poly (styrene sulfonic acid) aqueous solution (PEDOT / PSS) is formed on the entire surface, and heat treatment is performed in a vacuum to vaporize water. If the surface of the anode needs to be cleaned or polished, it may be performed before forming the organic compound layer containing PEDOT.
[0128]
Hereinafter, the substrate provided with the TFT, the anode, the insulator covering the end of the anode, and the hole injection layer (PEDOT) is loaded into the manufacturing apparatus shown in FIG. 12 and the laminated structure shown in FIG. The procedure for forming is shown.
[0129]
First, the substrate is set in the cassette chamber 120a or the cassette chamber 120b. When the substrate is a large substrate (for example, 300 mm × 360 mm), the substrate is set in the cassette chamber 120 b. When the substrate is a normal substrate (for example, 127 mm × 127 mm), the substrate is transferred to the tray mounting stage 121 and the tray (for example, 300 mm × 360 mm) on which several substrates are mounted.
[0130]
Next, the substrate is transferred from the cassette chamber 120b to the transfer chamber 118 provided with the substrate transfer mechanism. Next, the substrate is transferred to the film formation chamber 112, and an organic compound layer made of a polymer to be a light emitting layer is formed on the entire surface of the hole injection layer (PEDOT) provided on the entire surface. The film formation chamber 112 is a film formation chamber for forming an organic compound layer made of a polymer. In this embodiment, the dyes acting as the light emitting layer (1,1,4,4-tetraphenyl-1,3-butadiene (TPB), 4-dicyanomethylene-2-methyl-6- (p-dimethylamino-styryl) Here is an example in which a polyvinyl carbazole (PVK) solution doped with -4H-pyran (DCM1), Nile Red, coumarin 6, etc. is formed over the entire surface. Is set under the atmospheric pressure with the surface on which the film is to be formed facing upward, and after forming a film using water or an organic solvent as a solvent, a heat treatment is performed in a vacuum to evaporate water. Preferably, an annealing chamber capable of vacuum heating connected to the film formation chamber 112 may be provided.
[0131]
Next, the substrate is transferred to the preparation chamber 101 from the transfer chamber 118 provided with the substrate transfer mechanism.
[0132]
The preparation chamber 101 is connected to a vacuum exhaust processing chamber, and it is preferable that the chamber is evacuated and then an inert gas is introduced to maintain the atmospheric pressure. Next, it is transferred to the transfer chamber 102 connected to the preparation chamber 101. In advance, vacuum is maintained by evacuating so that moisture and oxygen are not present in the transfer chamber as much as possible.
[0133]
Further, the transfer chamber 102 is connected to a vacuum exhaust processing chamber that evacuates the transfer chamber. The vacuum evacuation processing chamber includes a magnetic levitation type turbo molecular pump, a cryopump, or a dry pump. As a result, the ultimate vacuum of the transfer chamber is reduced to 10 ^-5 -10 ^-6 It is possible to set the pressure to Pa, and it is possible to control the reverse diffusion of impurities from the pump side and the exhaust system. In order to prevent impurities from being introduced into the apparatus, an inert gas such as nitrogen or a rare gas is used as a gas to be introduced. These gases introduced into the apparatus are those that have been highly purified by a gas purifier before being introduced into the apparatus. Therefore, it is necessary to provide a gas purifier so that the gas is introduced into the film forming apparatus after being highly purified. Accordingly, oxygen, water, and other impurities contained in the gas can be removed in advance, so that introduction of these impurities into the device can be prevented.
[0134]
After film formation using water or an organic solvent as a solvent, it is preferable that the film be transferred to the pretreatment chamber 103 and subjected to heat treatment in a high vacuum to further vaporize moisture.
[0135]
In this embodiment, an example in which an organic compound layer made of a high molecular material is stacked is described. However, in the case of forming a stacked structure with a layer made of a low molecular material shown in FIG. 9C or FIG. Film formation may be performed in the deposition chambers 106R, 106G, and 106B by an evaporation method, and a layer containing an organic compound which emits white light, or red, green, or blue light may be formed as appropriate as the whole light-emitting element. The delivery room 105 is provided with a substrate reversing mechanism, and appropriately reverses the substrate.
[0136]
If necessary, an electron transport layer or an electron injection layer may be formed in the deposition chamber 106E, and a hole injection layer or a hole transport layer may be formed in the deposition chamber 106H. When the evaporation method is used, for example, the degree of vacuum is 5 × 10 ^-3 Torr (0.665 Pa) or less, preferably 10 ^-4 -10 ^-6 Vapor deposition is performed in a film formation chamber evacuated to Pa. At the time of vapor deposition, the organic compound is vaporized in advance by resistance heating, and scatters in the direction of the substrate by opening a shutter (not shown) at the time of vapor deposition. The vaporized organic compound scatters upward and is deposited on the substrate through an opening (not shown) provided in a metal mask (not shown). At the time of vapor deposition, the temperature of the substrate (T ₁ ) Is 50 to 200 ° C., preferably 65 to 150 ° C. In the case of using an evaporation method, it is preferable to set a crucible in which a deposition material is stored in advance in a film maker in a film formation chamber. It is preferable that the setting be performed without exposure to the air, and that the crucible be introduced into the film formation chamber while being sealed in the second container when transported from a material maker. Desirably, a chamber having vacuum evacuation means connected to the film forming chamber 106R is provided, and the crucible is taken out of the second container in a vacuum or an inert gas atmosphere, and the crucible is set in the film forming chamber. By doing so, the crucible and the EL material stored in the crucible can be prevented from being contaminated.
[0137]
Next, without transferring the substrate from the transfer chamber 102 to the transfer chamber 105, from the transfer chamber 105 to the transfer chamber 104a, and further from the transfer chamber 104a to the transfer chamber 107 without touching the atmosphere, without further touching the atmosphere. Then, the substrate is transferred from the delivery chamber 107 to the transfer chamber 108.
[0138]
Next, the metal film (MgAg, MgIn, AlLi, CaF 2) is transferred to the film forming chamber 110 by a transfer mechanism installed in the transfer chamber 108. ₂ , CaN, or an alloy, or a film formed by co-evaporation of aluminum with an element belonging to Group 1 or 2 of the periodic table and aluminum) is formed by an evaporation method using resistance heating. . At the time of vapor deposition, it is selectively formed using a vapor deposition mask.
[0139]
Next, the substrate is transferred to the plasma processing chamber 122 by a transfer mechanism provided in the transfer chamber 108, and the stack of organic compound films made of a polymer material is removed in a self-aligned manner using the second electrode as a mask. The plasma processing chamber 122 has plasma generating means, and performs dry etching by exciting one or more kinds of gas selected from Ar, H, F, and O to generate plasma. If etching is performed by oxygen plasma treatment, the etching can be performed also in the pretreatment chamber 103.
[0140]
Next, it is transported to the film formation chamber 110 again, and a metal film (an alloy such as MgAg, MgIn, AlLi, or CaN, or a film formed by co-evaporation of aluminum and an element belonging to Group 1 or 2 of the periodic table and aluminum) Is formed by an evaporation method using resistance heating. Note that here, the third electrode is formed using a mask different from the deposition mask of the metal film which has been previously deposited, so that the second electrode is electrically connected to the connection wiring. In this embodiment, the example in which the second electrode and the third electrode are formed in the same film forming chamber 110 has been described. However, since the mask needs to be replaced, the efficiency is reduced. Therefore, it is preferable to separately provide a film formation chamber in order to improve a task. Note that in this embodiment, an example in which the third electrode is selectively formed using a deposition mask is described. However, after forming a metal film by a sputtering method, patterning in which etching is performed using a photoresist may be performed. .
[0141]
Through the above steps, a light-emitting element having a stacked structure illustrated in FIG. 9B is formed.
[0142]
Next, the protective film is formed from a silicon nitride film or a silicon nitride oxide film by being transferred from the transfer chamber 108 to the film formation chamber 113 without exposure to the air. Here, a sputtering apparatus provided with a target made of silicon, a target made of silicon oxide, or a target made of silicon nitride in the film formation chamber 113 is used. For example, a silicon nitride film can be formed by using a silicon target and setting the atmosphere in a deposition chamber to a nitrogen atmosphere or an atmosphere containing nitrogen and argon.
[0143]
Next, the substrate on which the light-emitting elements are formed is transferred from the transfer chamber 108 to the transfer chamber 111 without being exposed to the atmosphere, and further transferred from the transfer chamber 111 to the transfer chamber 114.
[0144]
Next, the substrate on which the light emitting elements are formed is transferred from the transfer chamber 114 to the sealing chamber 116. Note that a sealing substrate provided with a sealing material is preferably prepared in the sealing chamber 116.
[0145]
The sealing substrate is set in the sealing substrate load chamber 117 from outside. Note that it is preferable to perform annealing in vacuum in advance, for example, in a sealing substrate load chamber 117 to remove impurities such as moisture. When the sealing material is formed on the sealing substrate, after the transfer chamber 114 is set to the atmospheric pressure, the sealing substrate is transferred from the sealing substrate load chamber to the dispenser chamber 115, and the substrate provided with the light emitting element is provided. And a sealing substrate on which the sealing material is formed is transported to the sealing chamber 116.
[0146]
Next, in order to degas the substrate provided with the light-emitting element, annealing is performed in a vacuum or an inert atmosphere, and then the sealing substrate provided with the sealant is bonded to the substrate provided with the light-emitting element. . Further, the sealed space is filled with hydrogen or an inert gas. Note that although an example in which a sealant is formed over a sealing substrate is described here, the present invention is not particularly limited thereto. A sealant may be formed over a substrate over which a light-emitting element is formed.
[0147]
Next, the pair of bonded substrates is irradiated with UV light by an ultraviolet irradiation mechanism provided in the sealing chamber 116 to cure the sealant. Note that, here, an ultraviolet curable resin is used as a sealant, but there is no particular limitation as long as it is an adhesive.
[0148]
Next, the pair of bonded substrates is transported from the sealing chamber 116 to the transport chamber 114 and from the transport chamber 114 to the unloading chamber 119 and taken out.
[0149]
As described above, by using the manufacturing apparatus illustrated in FIG. 12, the light-emitting element does not need to be exposed to the outside air until the light-emitting element is completely sealed in the sealed space, so that a highly reliable light-emitting device can be manufactured. Note that in the transfer chamber 114, a vacuum and a nitrogen atmosphere at atmospheric pressure are repeated, but it is desirable that the transfer chambers 102, 104a, and 108 always maintain a vacuum.
[0150]
Note that an in-line type film forming apparatus can also be used.
[0151]
Further, it is carried into the manufacturing apparatus shown in FIG. 12, and a metal film (a metal having a large work function (Pt, Cr, W, Ni, Zn, Sn, In, or the like)) is used as an anode. The procedure for forming the light emitting element in the opposite direction is described below.
[0152]
First, a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS) is formed on the entire surface, and heat treatment is performed in a vacuum to vaporize moisture.
[0153]
Next, a substrate provided with a TFT and an anode is set in the cassette chamber 120a or the cassette chamber 120b.
[0154]
Next, the substrate is transferred from the cassette chamber to the transfer chamber 118 provided with the substrate transfer mechanism.
[0155]
Next, the substrate is transferred to the film formation chamber 112, and an organic compound layer made of a polymer to be a light emitting layer is formed on the entire surface of the hole injection layer (PEDOT) provided on the entire surface. The film formation chamber 112 is a film formation chamber for forming an organic compound layer made of a polymer. In this embodiment, the dyes acting as the light emitting layer (1,1,4,4-tetraphenyl-1,3-butadiene (TPB), 4-dicyanomethylene-2-methyl-6- (p-dimethylamino-styryl) 3) An example of forming a polyvinyl carbazole (PVK) solution doped with -4H-pyran (DCM1), Nile Red, coumarin 6, etc. over the entire surface is shown. In the case where an organic compound layer is formed by a spin coating method in the film formation chamber 112, the substrate is set with the film formation surface facing upward under atmospheric pressure.
[0156]
Next, the substrate is transferred to the preparation chamber 101 from the transfer chamber 118 provided with the substrate transfer mechanism. Next, it is transferred to the transfer chamber 102 connected to the preparation chamber 101. After film formation using water or an organic solvent as a solvent, it is preferable that the film be transferred to the pretreatment chamber 103 and subjected to heat treatment in a vacuum to vaporize moisture.
[0157]
Next, without transferring the substrate from the transfer chamber 102 to the transfer chamber 105, from the transfer chamber 105 to the transfer chamber 104a, and further from the transfer chamber 104a to the transfer chamber 107 without touching the atmosphere, without further touching the atmosphere. Then, the substrate is transferred from the delivery chamber 107 to the transfer chamber 108.
[0158]
Next, the wafer is transferred to the film formation chamber 110 by a transfer mechanism provided in the transfer chamber 108, and is formed into a very thin metal film (an alloy such as MgAg, MgIn, AlLi, or CaN, or a Group 1 or Group 2 of the periodic table). A cathode (lower layer) made of a film formed by a co-evaporation method of a belonging element and aluminum is formed by an evaporation method using resistance heating. After a cathode (lower layer) made of a thin metal layer is formed, it is transported to the film forming chamber 109 and a transparent conductive film (ITO (indium tin oxide oxide), indium zinc oxide alloy (In ₂ O ₃ (ZnO), zinc oxide (ZnO), etc.), and a cathode (second electrode) formed by laminating a thin metal layer and a transparent conductive film is appropriately formed using a metal mask or the like. .
[0159]
Next, the substrate is transferred to the plasma processing chamber 122 by a transfer mechanism provided in the transfer chamber 108, and the stack of organic compound films made of a polymer material is removed in a self-aligned manner using the second electrode as a mask. The plasma processing chamber 122 has plasma generating means, and performs dry etching by exciting one or more kinds of gas selected from Ar, H, F, and O to generate plasma. If etching is performed by oxygen plasma treatment, the etching can be performed also in the pretreatment chamber 103.
[0160]
Next, the substrate is transported to the film formation chamber 109 again, and a third electrode made of a transparent conductive film (also referred to as an upper layer of a cathode) is formed by a sputtering method. Note that here, the metal mask is changed, a pattern different from the previously formed second electrode pattern is formed, and the third electrode is formed, thereby electrically connecting the second electrode to the connection wiring. Note that, in this embodiment, an example in which the third electrode is selectively formed using a mask is described; however, patterning in which etching is performed using a photoresist may be performed.
[0161]
Through the above steps, a light-emitting element which extracts light by passing through the second electrode is formed.
[0162]
Further, the subsequent steps are the same as those in the above-described manufacturing procedure of the light-emitting device having a stacked structure illustrated in FIG. 9B, and thus description thereof is omitted here.
[0163]
Note that in this embodiment, an example is described in which the method described in Embodiment 4 in which the third electrode is formed to electrically connect the second electrode to the connection wiring is used, but there is no particular limitation. Instead, electrical connection between the second electrode and the connection wiring may be performed by the method described in any of Embodiments 1 to 3.
[0164]
This embodiment can be freely combined with the first embodiment.
[0165]
[Example 3]
By implementing the present invention, all electronic devices incorporating a module having an organic light emitting element (active matrix EL module) are completed.
[0166]
Such electronic devices include video cameras, digital cameras, head-mounted displays (goggle-type displays), car navigation systems, projectors, car stereos, personal computers, personal digital assistants (mobile computers, mobile phones, e-books, etc.). No. Examples of these are shown in FIGS.
[0167]
FIG. 13A illustrates a personal computer, which includes a main body 2001, an image input unit 2002, a display unit 2003, a keyboard 2004, and the like.
[0168]
FIG. 13B illustrates a video camera, which includes a main body 2101, a display portion 2102, an audio input portion 2103, operation switches 2104, a battery 2105, an image receiving portion 2106, and the like.
[0169]
FIG. 13C illustrates a mobile computer (mobile computer), which includes a main body 2201, a camera unit 2202, an image receiving unit 2203, operation switches 2204, a display unit 2205, and the like.
[0170]
FIG. 13D illustrates a goggle-type display, which includes a main body 2301, a display portion 2302, an arm portion 2303, and the like.
[0171]
FIG. 13E illustrates a player using a recording medium on which a program is recorded (hereinafter, referred to as a recording medium), and includes a main body 2401, a display portion 2402, a speaker portion 2403, a recording medium 2404, operation switches 2405, and the like. This player uses a DVD (Digital Versatile Disc), a CD, or the like as a recording medium, and can perform music appreciation, movie appreciation, games, and the Internet.
[0172]
FIG. 13F illustrates a digital camera, which includes a main body 2501, a display portion 2502, an eyepiece portion 2503, operation switches 2504, an image receiving portion (not shown), and the like.
[0173]
FIG. 14A illustrates a mobile phone, which includes a main body 2901, an audio output portion 2902, an audio input portion 2903, a display portion 2904, operation switches 2905, an antenna 2906, an image input portion (CCD, image sensor, etc.) 2907, and the like.
[0174]
FIG. 14B illustrates a portable book (electronic book), which includes a main body 3001, display portions 3002 and 3003, a storage medium 3004, operation switches 3005, an antenna 3006, and the like.
[0175]
FIG. 14C illustrates a display, which includes a main body 3101, a support base 3102, a display portion 3103, and the like.
[0176]
Incidentally, the display shown in FIG. 14C is of a medium or small size or a large size, for example, a screen size of 5 to 20 inches. In addition, in order to form a display portion having such a size, it is preferable to use a substrate having a side of 1 m and mass-produce it by performing multi-paneling.
[0177]
As described above, the applicable range of the present invention is extremely wide, and the present invention can be applied to manufacturing methods of electronic devices in all fields. Further, the electronic apparatus of this embodiment can be realized by using any combination of the first to fourth embodiments, the first embodiment, and the second embodiment.
[0178]
[Example 4]
Embodiment 4 shows an example of an insulator having first and second radii of curvature. In this embodiment, an example in which only the upper end of the insulator has a radius of curvature is shown in FIG.
[0179]
In this embodiment, the structure other than the insulator is the same as that in Embodiment 4; however, there is no particular limitation. Instead of the insulator described in Embodiments 1 to 3, the insulator described in this embodiment is replaced with the insulator described in Embodiment 1. Can be applied.
[0180]
In FIG. 19, reference numeral 80 denotes a layer containing an organic compound, 81 denotes a second electrode, 87 denotes a connection wiring, 88 denotes an insulator, 89 denotes a first electrode, 91 denotes a third electrode, and 93 denotes a light emitting element. As the insulator 88, a negative organic material which becomes insoluble in an etchant by light or a positive organic material which becomes soluble in an etchant by light is preferably used.
[0181]
In this embodiment, the insulator 88 is formed using a positive photoresist. The insulator 88 shown in FIG. 19A is formed by adjusting exposure conditions, etchant conditions, and the like. The insulator 88 has a radius of curvature of 0.2 μm to 3 μm only at the upper end. With the insulator 88, the coverage of the layer 80 containing an organic compound and the second electrode 81 formed of a metal film can be improved, and a defect called a shrink in which a light-emitting region decreases can be reduced. Note that FIG. 20 is a photograph in which a shape similar to that of the insulator 88 illustrated in FIG. 19A is formed over a glass substrate using a positive acrylic resin, and a cross section is observed. Further, the taper angle on the side surface of the insulator 88 may be 45 ° ± 10 °.
[0182]
FIG. 19B shows an example in which an insulator is a stack of an upper layer 98b made of a photoresist which is a photosensitive organic material and a lower layer 98a made of an acrylic material which is a non-photosensitive organic material. In the upper layer 98b of the insulator, only the upper end has a radius of curvature of 0.2 μm to 3 μm. As the lower layer 98a, an inorganic material (such as silicon oxide, silicon nitride, or silicon oxynitride) can be used instead of the non-photosensitive material.
[0183]
FIG. 19C illustrates an example in which a silicon nitride film 94 is formed over an insulator 88 by an RF sputtering method. Instead of the silicon nitride film 94, a silicon nitride oxide film or AlN _X O _Y May be used. In addition, AlN _X O _Y May be formed by introducing oxygen, nitrogen, or a rare gas from the gas introduction system by a sputtering method using a target made of AlN or Al. AlN _X O _Y It is sufficient that nitrogen is contained in the layer represented by at least several atm%, preferably 2.5 atm% to 47.5 atm%, and oxygen is 47.5 atm% or less, preferably 0.01 to less than 20 atm%. I just need. By forming a protective film such as a silicon nitride film on the insulator 88, a defect called a shrink in which a light emitting region is reduced can be reduced.
[0184]
In this embodiment, any combination of the first to fourth embodiments and the first to third embodiments is possible.
[0185]
【The invention's effect】
According to the present invention, by selectively forming a polymer material layer, a structure in which a layer containing an organic compound is not formed at a connection portion of a wiring connected to an external power supply can be easily formed. it can.
[0186]
Further, according to the present invention, by providing a color filter, a circularly polarizing plate is not required and the cost is reduced. In addition, since separate coating is not required, improvement in throughput and higher definition can be realized.
[Brief description of the drawings]
FIG. 1 shows a cross-sectional view and a top view. (Embodiment 1)
FIG. 2 shows a cross-sectional view and a top view. (Embodiment 2)
FIG. 3 shows a cross-sectional view and a top view. (Embodiment 3)
FIG. 4 is a view showing an etching step. (Embodiment 4)
FIG. 5 shows a cross-sectional view and a top view. (Embodiment 4)
FIG. 6 is a diagram illustrating a top view of a pixel. (Example 1)
FIG. 7 is a view showing a process chart. (Example 1)
8A and 8B are a cross-sectional view and a top view of an active display device. (Example 1)
FIG. 9 is a diagram illustrating a stacked structure of a light-emitting element. (Example 1)
FIG. 10 is a schematic diagram of a case where full color is formed using white light emission. (Example 1)
FIG. 11 is a schematic diagram of a case where full color is formed by stacking a high molecular material and a low molecular material. (Example 1)
FIG. 12 is a diagram showing a manufacturing apparatus. (Example 2)
FIG. 13 illustrates an example of an electronic device. (Example 3)
FIG. 14 illustrates an example of an electronic device. (Example 3)
FIG. 15 is a diagram showing the transmittance of a colored layer. (Example 1)
FIG. 16 is a diagram showing chromaticity coordinates. (Example 1)
FIG. 17 is a photograph showing a cross section around an insulator. (Embodiment 4)
FIG. 18 is a photograph showing a cross section around an insulator. (Comparative example)
FIG. 19 is a sectional view. (Example 4)
FIG. 20 is a photograph showing a cross section around an insulator.
21A and 21B are a cross-sectional view and a top view. (Embodiment 4)
FIG. 22 is a diagram showing a cross-sectional view. (Embodiment 1)

Claims (21)

A first electrode, a layer containing an organic compound in contact with the first electrode, and a layer containing the organic compound between a first substrate having an insulating surface and a second substrate having a light-transmitting property; A pixel portion having a plurality of light-emitting elements having a second electrode in contact with the upper portion, a driver circuit, and a terminal portion,
The terminal portion is disposed on the first substrate so as to be located outside the second substrate,
The first substrate and the second substrate are bonded to each other with an adhesive in which a plurality of types of conductive fine particles having different diameters are mixed, and the second electrode and a wiring from a terminal portion are electrically connected to each other. A light-emitting device, which is connected to the light-emitting device. A first electrode, a layer containing an organic compound in contact with the first electrode, and a layer containing the organic compound between a first substrate having an insulating surface and a second substrate having a light-transmitting property; A pixel portion having a plurality of light-emitting elements having a second electrode in contact with the upper portion, a driver circuit, and a terminal portion,
The terminal portion is disposed on the first substrate so as to be located outside the second substrate,
The first substrate and the second substrate are bonded to each other by an adhesive in which fine particles made of an inorganic material and conductive fine particles having a diameter larger than the fine particles are mixed, and the second electrode, A light-emitting device, wherein a wiring from a terminal portion is electrically connected. A pixel portion including a plurality of light-emitting elements including a first electrode, a layer containing an organic compound in contact with the first electrode, and a second electrode in contact with the layer containing the organic compound, and a terminal portion. A light emitting device having
The end face of the layer containing the organic compound and the end face of the second electrode are coincident,
A feature is provided between the terminal portion and the pixel portion, where the second electrode and a wiring extending from the terminal portion are electrically connected with an adhesive containing conductive particles. Light emitting device. A pixel portion including a plurality of light-emitting elements including a first electrode, a layer containing an organic compound in contact with the first electrode, and a second electrode in contact with the layer containing the organic compound, and a terminal portion. A light emitting device having
The end face of the layer containing the organic compound and the end face of the second electrode are coincident,
There is provided between the terminal portion and the pixel portion a portion where the second electrode and a wiring extending from the terminal portion are connected by a third electrode covering the second electrode. Characteristic light emitting device. 5. The light emitting device according to claim 4, wherein the third electrode is made of a metal material. 6. The light-emitting device according to claim 4, wherein the second electrode and the third electrode are a cathode or an anode. The light-emitting device according to claim 1, wherein the second electrode has the same pattern shape as a layer containing the organic compound. The light-emitting device according to claim 1, wherein the layer containing the organic compound is a polymer material. The light-emitting device according to claim 1, wherein the layer containing the organic compound is a stack of a layer made of a high molecular material and a layer made of a low molecular material. 10. The insulating device according to claim 1, wherein an end of the first electrode is covered with an insulator, and has a curved surface having a first radius of curvature at an upper end of the insulator. A light emitting device having a curved surface having a second radius of curvature at a lower end portion of the object, wherein the first radius of curvature and the second radius of curvature are 0.2 μm to 3 μm. The light-emitting device according to claim 1, wherein the first electrode is a light-transmitting material, and is an anode or a cathode of the light-emitting element. The light-emitting device according to claim 1, wherein the layer containing the organic compound is a material that emits white light and is combined with a color filter. 13. The light-emitting device according to claim 1, wherein the layer containing the organic compound is a material that emits monochromatic light, and is combined with a color conversion layer or a coloring layer. 14. The light emitting device according to claim 1, wherein the light emitting device is a video camera, a digital camera, a goggle type display, a car navigation, a personal computer, or a personal digital assistant. An anode, a layer containing an organic compound in contact with the anode, and a method for manufacturing a light-emitting device including a light-emitting element having a cathode in contact with the layer containing the organic compound,
Forming a film containing an organic compound made of a polymer material over the first electrode having a light-transmitting property by a coating method;
Selectively forming a second electrode made of a metal material on a film containing the organic compound by an evaporation method of heating an evaporation material;
Etching the layer containing the organic compound in a self-aligned manner by etching with plasma using the second electrode as a mask;
Selectively forming a third electrode made of a metal material so as to cover the second electrode. The method for manufacturing a light-emitting device according to claim 15, wherein the second electrode and the third electrode are a cathode or an anode. 17. The method for manufacturing a light-emitting device according to claim 15, wherein formation of the third electrode uses an evaporation method or a sputtering method. An anode, a layer containing an organic compound in contact with the anode, and a method for manufacturing a light-emitting device including a light-emitting element having a cathode in contact with the layer containing the organic compound,
Forming a film containing an organic compound made of a polymer material over the first electrode having a light-transmitting property by a coating method;
Selectively forming a second electrode made of a metal material on a film containing the organic compound by an evaporation method of heating an evaporation material;
Etching the film containing the organic compound in a self-aligned manner by plasma etching using the second electrode as a mask;
Connecting the second electrode and a wiring extending from the terminal portion with an adhesive containing conductive particles. An anode, a layer containing an organic compound in contact with the anode, and a method for manufacturing a light-emitting device including a light-emitting element having a cathode in contact with the layer containing the organic compound,
Forming a thin film transistor on the first substrate;
Forming a first electrode connected to the thin film transistor;
Forming a film containing an organic compound made of a polymer material on the first electrode by a coating method;
Selectively forming a second electrode made of a metal material on a film containing the organic compound by an evaporation method of heating an evaporation material;
Etching the layer containing the organic compound in a self-aligned manner by etching with plasma using the second electrode as a mask;
Connecting the second electrode and the wiring extending from the terminal portion with an adhesive containing conductive particles, and simultaneously bonding the first substrate and the second substrate. For manufacturing a light emitting device. 19. The method for manufacturing a light-emitting device according to claim 15, wherein the plasma is generated by exciting one or a plurality of gases selected from Ar, H, F, and O. 21. The method for manufacturing a light-emitting device according to claim 15, wherein the first electrode is an anode or a cathode of the light-emitting element electrically connected to a TFT.

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