JP2003347260A - Treatment equipment and substrate treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent the generation of a blur on the surface of a substrate caused by an adhesive agent regarding treatment equipment which contains back-side etching equipment wherein the back of the substrate is etched in constituent, and regarding an adhesive agent eliminating method. <P>SOLUTION: In the treatment equipment which is provided with a grinder 10 for performing the back-grinding treatment of a wafer 2 which is stuck on a protective tape 3 with an adhesive agent 8, and the back-side etching equipment 20 wherein the back of the wafer 2 which is ground by the grinder 10 is subjected to back-side etching, UV irradiation equipment 50A for curing the adhesive agent 8 exposed from the protective tape 3 is installed. As a result, the adhesive agent 8 is prevented from generating an evaporation component like a monomer/polymer, so that the generation of a blur on the wafer 2 (semiconductor element 60) is prevented. <P>COPYRIGHT: (C)2004,JPO

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a processing apparatus and a substrate processing method, and more particularly to a processing apparatus including a device for backside etching the back surface of a substrate as a component and a substrate processing method using the processing apparatus.

[0002] As electronic devices become smaller and thinner,
There is also a demand for thinner semiconductor devices used in electronic devices. In addition, the development of a stacked semiconductor device in which a plurality of semiconductor elements are stacked and accommodated in one package has been advanced, and the demand for thinner semiconductor elements has been increasing. Conventional semiconductor devices have a thickness of 200 to 25
Although the thickness was about 0 μm, recently a semiconductor element having a thickness of about 50 μm has been produced, and further reduction in thickness has been promoted.

[0003]

2. Description of the Related Art Generally, a plurality of semiconductor elements are collectively formed on a circuit forming surface which is a surface of a silicon wafer (substrate). For the wafer on which the semiconductor elements are formed on the circuit forming surface, a process of grinding the back surface to reduce the thickness (back grinding process), and dicing for dicing the semiconductor devices into individual pieces by dicing the wafer. Processing is performed. Further, fine cracks are generated in the wafer on which the back grinding process and the dicing process (mechanical grinding and cutting processes) are performed. If the crack is left as it is, the wafer (semiconductor element) may be damaged starting from the crack, and this becomes more remarkable as the wafer becomes thinner.

[0004] For this reason, after the back grinding process by the grinder device is completed, the wafer is mounted on the back side etching device, and the back surface of the wafer is subjected to an etching process (hereinafter referred to as a back side etching process).
May be implemented. By performing the backside etching process, cracks generated on the back surface of the wafer can be removed, and the wafer can be further thinned.

In the method of performing the dicing process after the back grinding process is completed, if the wafer is thinned by the back grinding process, a large warp occurs, and the subsequent process may not be performed properly. . For this reason, a dicing process (hereinafter, referred to as a half-cut process) is performed to a predetermined depth of the wafer, and then a back grinding process is performed to reduce the thickness of the wafer (semiconductor element) and to separate the wafer. At the same time to prevent warping (hereinafter, this processing method is referred to as a pre-dicing method).

Hereinafter, the processing procedure of the dicing method will be described. In the pre-dicing method, first, a wafer is mounted on a dicing apparatus and dicing processing is performed at a predetermined dicing position to a predetermined depth (hereinafter, this processing is referred to as a half-cut processing). At this time, the half-cut processing is performed from the side of the wafer on which the circuit is formed.

When the half-cut processing is completed, a protective tape is adhered to the circuit forming surface of the wafer. This allows
The dicing groove formed by the half-cut process is closed by the protective tape.

The protective tape used here has a structure in which a resin film is coated with an ultraviolet-curing adhesive or a thermosetting adhesive. By bonding the wafer to the protection tape, the circuit forming surface of the wafer is protected by the protection tape.

The wafer mounted on the protective tape is mounted on a grinder device, and a rotating abrasive is pressed against the back surface (the surface opposite to the circuit forming surface) of the wafer to perform back grinding processing to reduce the thickness of the wafer. Reduce to a predetermined thickness. At this time, when the back grinding reaches the dicing groove, the semiconductor element is separated into pieces at that point.

[0010] As described above, the semiconductor elements that have been subjected to the back grinding process to a predetermined thickness and separated into individual pieces are subsequently mounted in a backside etching apparatus.
As this backside etching apparatus, plasma etching or wet etching is used. Then, in this backside etching apparatus, a backside etching process is performed on the back surface of the semiconductor element, and fine cracks that may have occurred are removed.

When the back side etching processing by the back side etching apparatus is completed, the semiconductor element is subsequently transferred to the transfer apparatus. In this transfer device, first, ultraviolet rays are irradiated to the protective tape adhered to the circuit forming surface, and the ultraviolet curable adhesive is cured. As a result, the adhesive strength of the adhesive is reduced, and the protective tape can be peeled from the wafer without damaging the circuit forming surface.

Subsequently, the transfer device adheres the tape disposed on the ring-shaped frame to the back surface of the semiconductor element and peels off the protective tape from the circuit forming surface. This allows
The circuit formation surface of each semiconductor element faces upward.

[0013]

However, according to the conventional pre-dicing method, after a back grinding process is performed in a grinder device to reduce the thickness and singulation of the semiconductor element, the semiconductor element is mounted on a protective tape. In the bonded state, the wafer is immediately transported to the backside etching apparatus to perform the backside etching process.

However, when the back grinding reaches the dicing groove in the grinder apparatus, the wafer is separated into individual semiconductor elements, and the adhesive applied to the protective tape is exposed to the outside. Conventionally, immediately after the back grinding process is completed, the semiconductor element is mounted on a back side etching apparatus (plasma etching apparatus) in a state of being adhered to the protective tape to perform the back side etching processing.

For this reason, when the apparatus is mounted on a backside etching apparatus (plasma etching apparatus) and subjected to a reduced pressure treatment,
A monomer component and / or a polymer component (hereinafter, referred to as a monomer / polymer component) of the adhesive evaporates, and the evaporated component reacts with an active species or a reaction product and deposits on a surface of the semiconductor element where no circuit is provided. There was a problem that would. As described above, when the deposit is deposited on the surface of the semiconductor element on which the circuit is not provided, fogging occurs on the surface of the semiconductor element on which the circuit is not provided.

The present invention has been made in view of the above points, and has as its object to provide a processing apparatus and a substrate processing method capable of preventing the occurrence of fogging on a substrate surface due to an adhesive. .

[0017]

Means for Solving the Problems In order to solve the above problems, the present invention is characterized by taking the following means.

According to the present invention, there is provided a grinder device for performing a back surface grinding process and a singulation process on a substrate bonded to a tape using an ultraviolet-curable adhesive, and the substrate ground by the grinder device. A processing apparatus comprising a backside etch apparatus for etching the back surface of the substrate, and a front chamber for temporarily storing the substrate when carrying the substrate into or out of the grinder apparatus or the backside etch apparatus.
Ultraviolet irradiation means for curing the adhesive exposed on the tape by irradiating ultraviolet light from the back side of the substrate is provided, and the ultraviolet irradiation means is moved back in the direction of the substrate transport path. It is characterized by being arranged at a position on the upstream side with respect to the arrangement position of the side etch device.

According to a second aspect of the present invention, in the processing apparatus of the first aspect, the ultraviolet irradiation means is provided in the back side etch device.

According to a third aspect of the present invention, in the processing apparatus of the first aspect, the ultraviolet irradiation means is provided in the grinder apparatus.

According to a fourth aspect of the present invention, in the processing apparatus of the third aspect, the ultraviolet irradiation means and the grinder device are integrated.

According to a fifth aspect of the present invention, in the processing apparatus of the first aspect, the ultraviolet irradiation means is provided in the front chamber.

According to a sixth aspect of the present invention, in the processing apparatus of the fifth aspect, the ultraviolet irradiation means and the front chamber are integrated.

According to a seventh aspect of the present invention, in the processing apparatus according to any one of the first to fourth aspects, the ultraviolet irradiation means further includes a degassing apparatus for removing a volatile gas component generated from the adhesive. Is provided.

Further, the invention according to claim 8 is a grinding step for performing a back grinding process on the substrate adhered to the tape using an ultraviolet-curable adhesive, and the substrate on which the back grinding process has been performed. A backside etching step of performing a backside etching process for further performing an etching process on the back surface of the substrate, wherein after the grinding step, the tape is irradiated by irradiating ultraviolet light from the back side of the substrate. And an ultraviolet irradiation step of curing the adhesive exposed from above.

[0026]

Next, embodiments of the present invention will be described with reference to the drawings.

FIGS. 1 to 5 are views for explaining a semiconductor manufacturing apparatus 1A as a processing apparatus according to one embodiment of the present invention. 6 to 8 show the semiconductor manufacturing apparatus 1A.
FIG. 4 is a diagram for explaining each processing on the wafer 2 performed by the method.

As shown in FIG. 1, the semiconductor manufacturing apparatus 1A includes a grinder device 10, a backside etching device 20, a transfer device 30, a transfer device 40, an ultraviolet irradiation device (hereinafter, referred to as a UV irradiation device) 50A, and a front chamber 15 , 3
7 and the load lock chambers 29 and 55 and the like.

In the semiconductor manufacturing apparatus 1 A, a back grinding process for thinning and dicing the wafer 2 is performed in the grinder device 10, and the semiconductor element 60 is formed in the back side etching device 20.
A backside etching process for removing fine cracks generated on the back surface 2b of the semiconductor device 60 is performed.
A transfer process for adhering to the V tape 5 is performed. Furthermore, U
In the V irradiation device 50A, a curing process of the adhesive 8 which is a feature of the present invention is performed.

First, prior to the description of each device 10, 20, 30, 40, 50A constituting the semiconductor manufacturing apparatus 1A, the wafer 2 processed by the semiconductor manufacturing apparatus 1A will be described. The semiconductor manufacturing apparatus 1A according to the present embodiment performs a half-cutting process on the wafer 2 in advance to a thickness approximately equal to the thickness of the final chip, and then performs a back-grinding process on the wafer 2 (semiconductor element 60). It employs a pre-dicing method that simultaneously reduces the thickness and singulation. Therefore, the wafer 2 shown in FIG. 6A is sent to a dicing device (not shown) and subjected to a half-cut process before being mounted on the semiconductor manufacturing apparatus 1A. As a result, as shown in FIG. 6B, a groove 7 having a predetermined depth (hereinafter, referred to as a half-cut portion) is formed on the circuit formation surface 2a of the wafer 2. The depth of the half-cut portion 7 is set to be, for example, (final chip thickness + several tens of μm).

When the half-cut processing is completed, FIG.
As shown in (C), a protective tape 3 is adhered to the circuit forming surface 2a of the wafer 2. Thereby, the half cut portion 7 formed by the half cut process is in a state of being closed by the protective tape 3.

The protective tape 3 used here has a configuration in which an adhesive 8 having ultraviolet curability is applied to a resin tape as a base material. Therefore, the protective tape 3 is
Is adhered to the wafer 2 by the adhesive force. In this bonding state, the adhesive 8 is sandwiched between the wafer 2 and the protective tape 3, and is not exposed from the half-cut portion 7.

The wafer 2 provided with the protective tape 3 having the above-described structure usually has a thickness of about 700 μm, and the semiconductor element 60 formed from the wafer 2 becomes thick as it is. . Therefore, after a circuit is formed on the circuit formation surface 2a, the back surface 2b (the surface opposite to the circuit formation surface) of the wafer 2 is polished,
Is performed to reduce the thickness of the substrate.

In the semiconductor manufacturing apparatus 1A according to the present embodiment,
Back surface 2 by mechanical grinding in grinder device 10
The wafer 2 is thinned to a predetermined thickness (for example, about 50 μm) by performing a back grinding process on b and then further performing a back side etching process on the back surface 2 b in the back side etching apparatus 20. Further, since the back grinding process on the back surface 2b of the wafer 2 is performed at a position equal to or higher than the position reaching the half cut portion 7, when the back grinding process reaches the bottom of the half cut portion 7, the wafer 2 is separated into individual pieces. And the semiconductor element 60 becomes an independent configuration (pre-dicing processing).

Subsequently, each of the apparatuses 10, 15, 20, 29, 30, 37, 40, 50 constituting the semiconductor manufacturing apparatus 1A.
A specific configuration of A and 55 will be described. First, the grinder device 10 will be described. Grinder device 10
Is an apparatus for performing back grinding processing on the back surface 2b of the wafer 2 as shown in FIG. The wafer 2 transferred by the transfer device 40 is loaded into the grinder device 10 via the front chamber 15. The transport device 40
For example, it is a conveyor, and the wafer 2 (wafer 2 after singulation)
A) is transported to the left in FIG.

As shown in an enlarged view in FIG. 2, the grinder device 10 includes a pre-processing wafer cassette 11, a positioning device 12, a chuck table 13, a water cleaning / drying unit 14,
It comprises a wafer cassette 19 after processing, a wafer transfer robot 16 and the like. The wafer 2 having the protective tape 3 adhered to the circuit forming surface 2a is housed in the unprocessed wafer cassette 11 of the grinder apparatus 10. The wafer 2 stored in the unprocessed wafer cassette 11 is taken out of the unprocessed wafer cassette 11 by the wafer transfer robot 16 and is first mounted on the alignment device 12.

The grinder device 10 includes the robot arm 1
6A has a wafer transfer robot 16 provided with a wafer holding unit 17 at the tip. By driving the wafer transfer robot 16, the wafer 2 is transferred in the grinder device 10.

The wafer holding section 17 is configured to hold the wafer 2 by suction. Therefore, when the wafer 2 is transferred, the wafer 2 is held by the wafer holding unit 17 by the suction force of the wafer holding unit 17. This prevents the wafer 2 from dropping during transfer.

The alignment device 12 randomly performs alignment processing of the wafers 2 stored in the unprocessed wafer cassette 11. Specifically, the alignment device 12 has an orientation flat / notch for detecting the orientation flat or the notch of the wafer 2.
Notch detecting means (not shown) is provided, and the wafer 2 is displaced based on the detection result of the orientation flat / notch detecting means. Thereby, the alignment of the wafer 2 is performed.

The wafer 2 that has been aligned by the alignment device 12 is transferred to the chuck table 13 by the wafer transfer robot 16. Chuck table 1
Reference numeral 3 has a configuration in which a rough grinding section 13A, a finish grinding section 13B, and a grinding surface brush cleaning section 13C are provided.

The rough grinding portion 13A is a portion for performing rough surface grinding on the back surface 2b of the wafer 2, and the finish grinding portion 13B is a portion for performing finish grinding on the back surface 2b of the wafer 2. The ground surface brush cleaning unit 13C is a part that performs brush cleaning on the back surface 2b of the wafer 2. For this reason, on the upper part of the rough grinding portion 13A, a grinding material 18D for rough surface grinding (for example, having a roughness of
60), the spindle 1 is located above the finish grinding section 13B.
A grinding material 18E (for example, a roughness of $ 2000) for finish grinding, which is mounted on 8B, is provided. Further, a cleaning brush 18F which is supported by a spindle 18C is disposed above the grinding surface brush cleaning unit 13C. Each of the spindles 18A to 18C is configured to be rotated by a motor (not shown), and is further configured to be movable in a circumferential direction by a moving mechanism (not shown).

The wafer 2 positioned by the positioning device 12 as described above is first mounted on the rough grinding section 13A by the wafer transfer robot 16, and the grinding material 1 is placed on the back surface 2b.
Rough grinding is performed by 8D. During the rough grinding with the abrasive 18D, the abrasive 18D reaches the half-cut portion 7 formed in the wafer 2, whereby the wafer 2 is singulated into individual semiconductor elements 60. In the following description, the semiconductor device 60 is separated into the semiconductor elements 60 by the back grinding process, but is maintained in a state of being adhered to the protective tape 3 so as to maintain the shape of the wafer 2 as a whole. The assembly of the elements 60 is referred to as a wafer 2A after singulation.

When the rough grinding is completed, the chuck table is rotated, and the singulated wafer 2A is moved from the rough grinding section 13A to the finish grinding section 13B. Then, a grinding material 18E is applied to the back surface 2b of each of the semiconductor elements 60 after the rough grinding.
Finish grinding is carried out. When each of the above-mentioned grinding processes is completed, the chuck table is rotated to separate the wafer 2 after singulation.
A is moved to the grinding surface brush cleaning unit 13C, and the brush cleaning of the grinding surface is performed by the grinding surface brush cleaning unit 13C.

The wafer 2A after singulation after the above-mentioned back grinding processing is transferred to the water washing / drying unit 14 by the wafer transfer robot 16. In the water cleaning / drying unit 14, the wafer 2A after singulation is subjected to a water cleaning process and a drying process to remove dust adhering to the surface. When this process is completed, the singulated wafer 2A is stored in the processed wafer cassette 19. FIG. 6 (E)
The wafer 2A after singulation just before being housed in the wafer cassette 19 after processing is shown.

The above-described grinder device 10 is used for rough surface grinding, finish grinding. In addition, the respective processes of the brush cleaning and the brush cleaning can be performed in parallel, so that the chuck table 13 can simultaneously process three wafers 2 (wafers 2A after singulation).

When the above-described series of back grinding processes is completed in the grinder apparatus 10, the individualized wafers 2 A stored in the processed wafer cassette 19 are processed.
Is delivered to the transport device 40 via the front chamber 15 by a delivery device (not shown).

The transfer device 40 transfers the singulated wafer 2A to the load lock chamber 55, and then transfers the singulated wafer 2A from the load lock chamber 55 into the UV irradiation device 50A. The UV irradiating device 50A has a function of irradiating the adhesive 8 for bonding the protective tape 3 and the wafer 2 with ultraviolet rays. For convenience of explanation, the configuration of the UV irradiating device 50A will be described later. .

The wafer 2A after singulation in which the adhesive 8 is cured in the UV irradiation device 50A is transferred to the transfer device 4
0, the wafer is transported to the load lock chamber 29, and subsequently transported from the load lock chamber 29 to the backside etching apparatus 20. In this backside etching apparatus 20,
The back surface of each semiconductor element 60 thinned by the back grinding process is further subjected to a back side etching process of about 20 μm.

Thus, even if fine cracks have occurred in the semiconductor element 60 in the above-mentioned back grinding process (mechanical process), these cracks are removed by the back side etching process. Further, since the thickness of the wafer 2A after singulation is further reduced, it is possible to further reduce the thickness of the semiconductor element 60 (when the purpose is only removal of fine cracks, the thickness is about 6 μm. Backside etching is also possible).

For the back side etching, either dry etching or wet etching can be used. However, dry etching is desirable in terms of uniformity, and among them, plasma etching is preferably used.

The plasma etching may be a batch plasma etching in which plasma is simultaneously applied to the entire wafer 2A after singulation to perform etching.
Further, partial plasma etching in which the plasma density is partially increased and irradiation may be used. In the batch plasma etching, the entire surface of the wafer 2A is simultaneously etched after singulation, which is effective in shortening the time required for the backside etching process (etching time).

However, in the collective plasma etching, there is a possibility that the density of the plasma is not uniform over the entire surface of the wafer 2A after singulation. In this case, the etching rate changes depending on the density of the plasma. The backside etching process on the semiconductor element 60 may be performed unevenly. However, by using partial plasma etching, each semiconductor element 6
The backside etching process can be performed under the optimum etching conditions over the entire surface of the wafer 0 (the wafer 2A after singulation). For this reason, the backside etching apparatus 20 used in this embodiment employs a configuration using partial plasma etching.

Subsequently, the backside etching apparatus 20
Will be described. FIG. 3 shows the backside etching apparatus 20 in an enlarged manner. The backside etching apparatus 20 is a partial plasma etching apparatus, and generally has a configuration including a chamber 22, a processing gas introduction pipe 24, a magnetron 26, an XYZ table 28, a driving unit 27, and the like.

The chamber 22 is connected to exhaust means such as a vacuum pump so that the inside of the chamber 22 has a predetermined reduced pressure environment. Therefore, the transport device 40 and the backside etching device 20
A load lock chamber 29 is provided between the two.

In the chamber 22, XYZ as a mounting table
A table 28 is provided, on which a wafer 2A after singulation, which is an object to be processed, is placed. XYZ table 2
Reference numeral 8 is configured to be movable in the X, Y, and Z directions by the drive unit 27.

Above the XYZ table 28, a nozzle 25 extending from the gas introduction pipe 24 is arranged. The portion above the nozzle 25 is connected to a magnetron 26, and the processing gas flowing through the gas introduction pipe is supplied to the magnetron 2
The high frequency from 6 is irradiated to generate plasma. The plasma is singulated from the nozzle 25 into the wafer 2A (semiconductor element 6).
0) is locally irradiated and partially etched by the action of plasma.

The portion to be irradiated with the plasma is changed by driving the XYZ table 28 in the XY directions (horizontal direction) by the driving unit 27 and moving the wafer 2A after singulation relative to the nozzle 25. Can be. Also, XY
By moving the Z table 28 in the Z direction (vertical direction), the distance between the nozzle 25 and the singulated wafer 2A can be adjusted. Further, as described above, the backside etching process is performed under a reduced pressure environment exhausted by an exhaust unit such as a vacuum pump.

As shown in FIG. 7H, the backside etching process is performed on the back surface 2b of the wafer 2A (semiconductor device 60) after the singulation as shown in FIG. Minor cracks are removed. The backside etching apparatus 20 shown in FIG. 3 is configured to move the wafer 2A after singulation with respect to the nozzle 25, but may be configured to move both the wafers 2A and 25.

Next, the transfer device 30 will be described.
The transfer device 30, as shown in FIG.
1, a UV irradiation device 31A, an alignment device 32, a frame mounting device 33, a protective tape peeling device 34, a front chamber 37 and the like. This transfer device 30
As shown in FIG. 8, the semiconductor chips 60 constituting the singulated wafer 2A are bonded to the UV tape 5, and the protective tape 3 is peeled off from the singulated wafer 2A.

The specific processing procedure is as follows. The backside etching process is performed in the backside etching device 20, and the singulated wafer 2 </ b> A transferred by the transfer device 40 is loaded into the transfer device 30 via the front chamber 37, and is first mounted on the receiving stage 31. Is done.

The singulated wafer 2A stored in the receiving stage 31 is subsequently irradiated with ultraviolet rays (UV) by a UV irradiation device 31A. The UV irradiation is performed on an ultraviolet-curable adhesive 8 for bonding the wafer 2A (semiconductor element 60) and the protective tape 3 after the singulation.
The UV irradiation is performed on the back side of the protective tape 3 (from the surface opposite to the surface to which the wafer 2A is bonded after singulation).

The adhesive 8 is hardened by this UV irradiation, whereby the adhesive strength is reduced, and therefore, the process of removing (peeling) the wafer 2 from the protective tape 3 can be easily performed. As will be described later, the portion of the adhesive 8 exposed from the wafer 2A after singulation is already cured by the UV irradiation device 50A. In the UV irradiation device 31A, U
V irradiation is performed from the back side of the protective tape 3.
For this reason, the UV irradiation processing performed by the UV irradiation device 31A of the transfer device 30 mainly includes the adhesive 8 (that is, the separated wafer 2A and the separated wafer 2A) at the bonding position between the singulated wafer 2A and the protective tape 3. Adhesive sandwiched between protective tape 3 and 8)
Is carried out to cure.

When UV irradiation is performed in the UV irradiation device 31A, the wafer 2A after singulation is aligned with the alignment device 3A.
Sent to 2. In the alignment device 32, alignment processing (positioning processing) of the orientation flat / notch is performed. The singulated wafer 2A that has been subjected to the alignment processing by the alignment device 32 is sent to the frame mount device 33, where the frame mount process is performed.

In the frame mounting process, an annular frame 6 on which a UV tape 5 (an adhesive such as a thermosetting adhesive or an ultraviolet curing adhesive is applied in advance) as shown in FIG. Is prepared, and the wafer 2A is bonded to the UV tape 5 after singulation. The reason why the wafer 2A after singulation is re-attached to the frame 6 is to turn the circuit forming surface 2a of each semiconductor element 60 upward.

The UV tape 5 is mounted on the frame mounting device 33.
When the wafer 2A after singulation is bonded to the frame 6, the frame 6 on which the wafer 2A after singulation is mounted is removed from the protective tape peeling device 34
Sent to In the protective tape peeling device 34, as shown in FIG. 8, the protective tape 3 is peeled from the wafer 2A after singulation, and the circuit forming surface 2a is exposed. At this time, UV is applied to the adhesive 8 for bonding the wafer 2A and the protective tape 3 after singulation.
Since the irradiation device 31A irradiates the ultraviolet rays to reduce the adhesive force, the peeling process of the protective tape 3 in the frame mount device 33 can be easily performed.

As described above, the transfer device 30 performs the process of transferring the wafer 2A from the protective tape 3 to the UV tape 5 after singulation. The wafer 2A (semiconductor element 60) after singulation, which is inverted so that the circuit forming surface 2a faces upward,
By cleaning the circuit forming surface 2a in the cleaning device 35, unnecessary adhesives 8 and the like that have adhered are removed. Then, the wafer 2A after singulation after the completion of the cleaning process is stored in the individual wafer storage cassette 35.

Next, the UV irradiation device 50A will be described. In the present embodiment, the UV irradiation device 50A is configured to be independent of the grinder device 10 and the backside etching device 20, and the arrangement position is set to the grinder device 10A.
And the back side etching device 20. The singulated wafer 2A that has been back-ground processed by the grinder device 10 is mounted on the UV irradiation device 50A via the transfer device 40 and the load lock chamber 55.

As shown in FIG. 5, the UV irradiation device 50A has a main body 51. It comprises a base 52, a UV lamp 54, a degassing suction nozzle 57, a heater 58 and the like. The apparatus main body 51 is connected to a vacuum pump (not shown). Therefore, the inside of the apparatus main body 51 is configured to be able to reduce the pressure. The base 52 is a portion to which the wafer 2A after singulation is mounted, and is configured so that the wafer 2A after singulation can be fixed by a suction chuck (not shown). The base 52 is configured to be rotated by a driving device 53 disposed below.

The UV lamp 54 is disposed at an upper position facing the base 52. This UV lamp 54
Is for irradiating ultraviolet light (UV) to the wafer 2A after singulation mounted on the base 52. A reflector 54A is provided above the UV lamp 54, and is configured to irradiate uniform ultraviolet rays to the wafer 2A after singulation mounted on the base 52. Further, the reflector 54A is configured to be capable of irradiating the wafer 2A after singulation from substantially vertically above the wafer 2A.

The degassing suction nozzle 57 is connected to a suction device (not shown). This degassing suction nozzle 57
Is to remove volatile components generated from the adhesive 8 under reduced pressure atmosphere by suction as described later.

Further, the heater 58 has a function of promoting the degassing process by heating the singulated wafer 2A mounted on the base 52. Although schematically shown in the drawing, the degassing suction nozzle 57 is configured to be able to suck all volatile components of the adhesive 8 generated from the entire surface of the wafer 2A after singulation. Also, the base 52
Since (the wafer 2A after singulation) is configured to be rotated by the driving device 53, the volatile component of the adhesive 8 generated from the entire surface of the wafer 2A after singulation is also removed by the degassing suction nozzle 57. Is efficiently sucked.

In the UV irradiation apparatus 50A having the above-described structure, the processing for curing the adhesive 8 applied to the protective tape 3 as described above is performed. As shown in FIG. 6 (C),
When the protection tape 3 is bonded to the wafer 2, the adhesive 8
Is sandwiched between the protective tape 3 and the wafer 2 and is not exposed to the outside (accurately, it is exposed to the side, but can be neglected because of its small area).

However, when the back grinding process is performed by the grinder device 10, the wafer 2
When the wafer 2A is divided into individual pieces, a portion where the adhesive 8 is exposed is generated between the adjacent semiconductor elements 60 (see FIG. 6E). Therefore, if the wafer 2A after singulation in this state is subjected to backside etching in the backside etching apparatus 20, the monomer / polymer components of the adhesive 8 evaporate, and the evaporated components react with active species and reaction products. As described above, fogging occurs due to deposition on the surface of the semiconductor element 60.

Therefore, in this embodiment, the grinder device 10
A UV irradiation device 50A for curing the adhesive 8 is provided between the semiconductor device 60 and the backside etching device 20 to prevent the surface of the semiconductor element 60 from fogging. Hereinafter, a specific operation of the UV irradiation device 50A will be described.

When the wafer 2A is diced and vacuum-chucked on the base 52, the drive unit 53 drives the base 52 to rotate. As a result, the wafer 2A after singulation also rotates together with the base 52. Then, the rotating wafer 2A after singulation is irradiated with ultraviolet rays by a UV lamp 54 (hereinafter, this processing is referred to as UV irradiation processing).

FIG. 7 (F) shows that the wafer 2A is UV
This shows a state where the irradiation process is being performed. This UV irradiation processing is performed for the purpose of irradiating the adhesive 8 (exposed between the pair of semiconductor elements 60) exposed outside by back grinding the wafer 2 with ultraviolet rays. As shown in FIG. 7 (F), the UV irradiation process performed by the UV irradiation device 50A is performed on the back side (the back side on which the back grinding is performed) of the wafer 2A (semiconductor element 60) after singulation. Is irradiated with ultraviolet rays.

As described above, the adhesive 8 is an ultraviolet curable adhesive, and is cured by performing a UV irradiation treatment. As described above, the exposed portion of the adhesive 8 is cured by the UV irradiation, so that the monomer / polymer component of the adhesive 8 does not evaporate from the protective tape 3 even if a decompression process is performed later. Unnecessary substances can be prevented from accumulating on the wafer 2A after singulation and the surface can be prevented from fogging.

In this embodiment, since UV irradiation is performed while rotating the wafer 2A after singulation, so-called shadows are produced even if the distance between the individual semiconductor elements 60, that is, the exposed area of the adhesive 8 is small. It is possible to irradiate the exposed adhesive 8 with ultraviolet rays without generation. Thereby, the evaporation of the monomer / polymer component from the adhesive 8 can be more reliably prevented.

Next, after the pressure is once returned to the normal pressure, the wafer 2A is separated and fixed to the base 52 by the vacuum chuck provided on the base 52. After the wafer 2A is divided into individual pieces,
When installed in the irradiation device 50A, first, a vacuum device (not shown) is activated to reduce the pressure inside the device main body 51. As a result, the monomer / polymer component contained in the adhesive 8 evaporates, and the evaporated monomer / polymer component is sucked by the degassing suction nozzle 57 and removed to the outside (this process is called degassing process). ). At this time, in this embodiment, since the heating process is performed by the heater 58 together with the decompression process, the monomer / polymer components contained in the adhesive 8 can be efficiently evaporated.

FIG. 7G shows a state in which the degassing process is being performed. In this embodiment, by providing the heater 58, the degassing process is performed in a reduced pressure heating environment, so that the monomer / polymer component can be positively volatilized from the adhesive 8, and the efficient degassing process can be performed. Can be implemented. When the above degassing process is completed, the vacuum pump is stopped, and the inside of the apparatus main body 51 is returned to normal pressure.

In this embodiment, the UV irradiation device 50 is used.
In A, both the degassing process and the UV irradiation process were performed. However, in preventing volatilization of the monomer / polymer component from the adhesive 8, these two processes are not necessarily performed, and a predetermined effect can be realized at least by performing UV irradiation.

The above series of processing is performed by a UV irradiation device 50A.
In the adjacent semiconductor element 60
The adhesive 8 located therebetween is cured. Therefore, even if the backside etching process is performed in the backside etching device 20 following the adhesive curing process in the UV irradiation device 50A, the monomer / polymer component does not evaporate from the wafer 2A after singulation, and the semiconductor Element 60
Fog can be reliably prevented from being generated on the surface of the substrate.

In the above-described embodiment, the UV irradiation device 50A has a configuration independent of the grinder device 10 and the backside etching device 20, and is provided between the devices 10, 20. However, the UV irradiation device is a grinder device 10 and a backside etching device 2
0 does not necessarily have to be independent of each other.
It is also possible to adopt a configuration integrated with 0, 20. 9 to 12 show semiconductor manufacturing apparatuses 1B to 1E which are first to fourth modified examples of the semiconductor manufacturing apparatus 1A described above.

A semiconductor manufacturing apparatus 1B according to a first modification shown in FIG.
Is provided. As is clear from the above description, the adhesive curing process by the UV irradiation device 50B needs to be performed after the back grinding process is completed. For this reason, in the configuration of this modification, a configuration in which the UV irradiation device 50B is provided integrally with the water cleaning / drying unit 14 shown in FIG. 2 can be considered.

A semiconductor manufacturing apparatus 1 C according to a second modification shown in FIG. 10 has a front chamber 15 attached to a grinder apparatus 10.
Provided with a UV irradiation device 50C. As in the present modification, it is also possible to perform UV irradiation on the singulated wafer 2A temporarily stored in the front chamber 15, thereby reducing the processing waiting time of the singulated wafer 2A. Since the UV irradiation is performed, the processing efficiency of the wafer 2 (the wafer 2A after singulation) can be improved.

A semiconductor manufacturing apparatus 1C according to a third modification shown in FIG.
This is a configuration provided with an irradiation device 50D. As described above, the adhesive curing process by the UV irradiation device 50D needs to be performed before the backside etching process.

For this reason, in the configuration of the present modification, an adhesive removing chamber is provided in the chamber 22, and before the backside etching processing, the adhesive curing processing is performed in the adhesive removing chamber, and then the wafer after singulation is formed. It is necessary to transport 2A to the XYZ table 28 to perform a backside etching process.

A semiconductor manufacturing apparatus 1E according to a fourth modification shown in FIG. 12 has a configuration in which a UV irradiation apparatus 50E is provided in a load lock chamber 29 attached to the backside etching apparatus 20. Even with this configuration, the second
As with the semiconductor manufacturing apparatus 1C according to the modification, the wafer 2
The processing efficiency of (the wafer 2A after singulation) can be improved.

[0089]

As described above, according to the present invention, since the adhesive exposed from the tape is cured by providing the UV irradiation device, the monomer / polymer component of the adhesive evaporates from the tape in a reduced pressure treatment or the like. Will not be
Therefore, it is possible to prevent unnecessary substances from being deposited on the surface of the substrate and fogging the surface.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a semiconductor manufacturing apparatus (processing apparatus) according to an embodiment of the present invention.

FIG. 2 is an enlarged plan view showing a grinder apparatus constituting the semiconductor manufacturing apparatus according to one embodiment of the present invention.

FIG. 3 is an enlarged front view showing a backside etching apparatus constituting the semiconductor manufacturing apparatus according to one embodiment of the present invention.

FIG. 4 is a configuration diagram showing a transfer device constituting a semiconductor manufacturing apparatus according to one embodiment of the present invention.

FIG. 5 is a configuration diagram illustrating a UV irradiation apparatus that configures a semiconductor manufacturing apparatus according to one embodiment of the present invention.

FIG. 6 is a view for explaining an adhesive removing method according to an embodiment of the present invention (part 1).

FIG. 7 is a view for explaining an adhesive removing method according to an embodiment of the present invention (part 2).

FIG. 8 is a diagram illustrating a transfer process performed by the transfer device.

FIG. 9 is a configuration diagram illustrating a semiconductor manufacturing apparatus according to a first modification of the present invention.

FIG. 10 is a configuration diagram illustrating a semiconductor manufacturing apparatus according to a second modification of the present invention.

FIG. 11 is a configuration diagram illustrating a semiconductor manufacturing apparatus according to a third modification of the present invention.

FIG. 12 is a configuration diagram illustrating a semiconductor manufacturing apparatus according to a fourth modification of the present invention.

[Explanation of symbols]

1A-1E Semiconductor manufacturing equipment 2 wafer 2A Wafer after singulation 3 protective tape 6 frames 7 Half cut part 8 adhesive 10 Grinder device 13 Chuck table 16 Wafer transfer robot 20 Backside etching equipment 25 nozzles 26 magnetron 30 Transfer device 31 Receiving Stage 32 Alignment device 33 Frame mounting device 34 Protective tape peeling device 40 transport device 50A-50D UV irradiation device 54 UV lamp 56 Solvent nozzle 57 Degassing suction nozzle 60 Semiconductor element

   ────────────────────────────────────────────────── ─── Continuation of front page    (72) Inventor Koji Honma             2-703 Tateno, Higashiyamato-shi, Tokyo Stock             Company Chemtronics F term (reference) 5F004 BA03 BB05 EA38 FA08

Claims (8)

[Claims] 1. A grinder device for performing back surface grinding and singulation of a substrate bonded to a tape using an ultraviolet-curing adhesive, and etching the back surface of the substrate ground by the grinder device. A backside etch device, and a front chamber for temporarily storing the substrate when carrying the substrate into or out of the grinder device or the backside etch device, by irradiating ultraviolet rays from the back side of the substrate. UV irradiation means for curing the adhesive exposed on the tape is provided, and, with respect to the direction of the substrate transport path, the UV irradiation means is located on the upstream side with respect to the position of the back side etch device. A processing device, which is disposed at a position. 2. The processing apparatus according to claim 1, wherein said ultraviolet irradiation means is provided in said backside etching apparatus. 3. The processing apparatus according to claim 1, wherein said ultraviolet irradiation means is provided in said grinder apparatus. 4. The processing apparatus according to claim 3, wherein said ultraviolet irradiation means and said grinder apparatus are integrated. 5. The processing apparatus according to claim 1, wherein said ultraviolet irradiation means is provided in said front chamber. 6. The processing apparatus according to claim 5, wherein said ultraviolet irradiation means and said front chamber are integrated. 7. The processing apparatus according to claim 1, wherein the ultraviolet irradiation means further includes a degassing device for removing a volatile gas component generated from the adhesive. Processing equipment. 8. A grinding step of performing a back grinding process on the substrate bonded to the tape using an ultraviolet-curable adhesive, and a back surface of the substrate on which the back grinding process has been performed.
A backside etching step of performing a backside etch process for performing an etching process, wherein after the grinding process is completed, the substrate is exposed from the tape by irradiating ultraviolet rays from the back side of the substrate. A substrate processing method, comprising an ultraviolet irradiation step of curing the adhesive.