JP2003059803A - Aligner - Google Patents

Abstract

PROBLEM TO BE SOLVED: To shorten substitution time of gas in a space (light path space) where an exposure light passes, such as the space between a projection light system and a substrate, with an inert gas. SOLUTION: The aligner comprises a wafer stage 102, a projection light system 101, a gas feed section 112 for feeding an inert gas in the light path space 116 where exposure light passes between the wafer stage 102 and the projection light system 101, the wafer stage 102 is charged into under the light path space 116 from the downstream, with respect to the flow of peripheral atmosphere.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus used for manufacturing, for example, semiconductor devices, image pickup devices, liquid crystal display devices, thin film magnetic heads and other microdevices.

[0002]

2. Description of the Related Art In a photolithography process for manufacturing a semiconductor device or the like, an exposure apparatus is used which projects a pattern image of a mask (for example, a reticle) onto a photosensitive substrate through a projection optical system to expose it. In recent years, semiconductor integrated circuits have been developed in the direction of miniaturization, and in the photolithography process, the wavelength of the photolithography light source has been shortened.

However, vacuum ultraviolet rays, especially 250n
Light having a wavelength shorter than m, for example, KrF excimer laser (wavelength 248 nm), ArF excimer laser (wavelength 19
3 nm), F ₂ laser (wavelength 157 nm), or YA
When light such as a harmonic of G laser is used as the exposure light, or when X-rays are used as the exposure light, there is a problem that the intensity of the exposure light is reduced due to the influence of the absorption of the exposure light by oxygen. It was happening.

Therefore, conventionally, in an exposure apparatus having a light source such as an F ₂ excimer laser, a sealed space for sealing only the optical path portion is formed, and for example, a gas containing no oxygen such as nitrogen is used to seal the sealed space. The gas was replaced to try to avoid a decrease in the transmittance of the exposure light.

FIG. 8 shows that an inert gas atmosphere is formed in the optical path space by supplying the inert gas to the optical path space between the final optical member of the projection optical system (lens barrel) and the photosensitive substrate (wafer). It is a figure which shows the exposure apparatus which performs exposure by doing.
In this exposure apparatus, a shielding member is provided around the optical path space in order to separate the optical path space above the exposure area and the surrounding atmosphere, and an inert gas is supplied into the space from the periphery of the exposure area. Thereby, the inert gas concentration of the atmosphere in the optical path space can be made high.

[0006]

However, in the exposure apparatus shown in FIG. 8, when the wafer stage plunges into the optical path space, the optical path space in which an inert gas has been flown in advance in order to engulf the surrounding atmosphere. Even then, the surrounding atmosphere entered, and the concentration of the inert gas had decreased. Further, even after the substrate has actually entered the exposure region, it takes about several seconds for the oxygen concentration in the optical path space to decrease, leading to a decrease in throughput.

The same problem occurs with masks (eg, reticles).
This also applies to the case where an inert gas is supplied to the periphery, and even in the reticle, it takes about several seconds for the oxygen concentration in the optical path space surrounded by the shielding member to decrease, leading to a decrease in throughput.

The present invention has been made in view of the above problems, and holds, for example, a space between a projection optical system and a substrate, an illumination optical system for illuminating a mask (for example, a reticle), and the mask. Required to replace the gas in the optical path space including the space (exposure region) through which the exposure light passes, such as the space between the mask stage and the space between the mask stage and the projection optical system, with an inert gas. An object is to provide an exposure apparatus that can reduce the time.

[0009]

An exposure apparatus according to the present invention for achieving the above object has the following configuration. That is, an exposure apparatus that projects and transfers a pattern formed on a mask onto a substrate using exposure light, the stage holding at least one of the substrate and the mask, an optical system, the stage, and the stage. A flow of an inert gas is formed in an optical path space including a space through which exposure light passes between the optical system and the optical system, and the amount of the inert gas supplied to the optical path space is such that the gas containing the inert gas is exhausted. A gas flow forming mechanism having an exhaust amount or more is provided, and the stage is thrust into the space below the optical path space from the downstream side with respect to the flow of the surrounding atmosphere.

An exposure apparatus according to the present invention for achieving the above object has the following configuration. That is, an exposure apparatus that projects and transfers a pattern formed on a mask onto a substrate using exposure light, the stage holding at least one of the substrate and the mask, an optical system, the stage, and the stage. A flow of an inert gas is formed in an optical path space including a space through which exposure light passes between the optical system and the optical system, and the amount of the inert gas supplied to the optical path space is such that the gas containing the inert gas is exhausted. A gas flow forming mechanism having an exhaust amount or more is provided, and an exchange door for exchanging at least one of the substrate and the mask is provided on the downstream side with respect to the flow of the surrounding atmosphere.

Preferably, an exchange door for exchanging at least one of the substrate and the mask is arranged on the downstream side with respect to the flow of the ambient atmosphere.

Also, preferably, the inert gas is nitrogen gas or helium gas.

Further, preferably, the gas flow forming mechanism includes a supply mechanism for supplying an inert gas to the optical path space,
At least a supply mechanism is provided among an exhaust mechanism that exhausts a gas containing an inert gas from the optical path space.

Further, preferably, the gas flow forming mechanism is a first gas flow forming mechanism arranged to form a flow of an inert gas in a first optical path space between the projection optical system and the substrate, A second gas flow forming mechanism arranged to form a flow of an inert gas in a second optical path space between an illumination system for illuminating a mask and a mask stage for holding the mask, the mask stage and the projection A third optical path space formed between the optical system and the third optical path space so as to form a flow of the inert gas.
At least one gas flow forming mechanism among the gas flow forming mechanisms is provided, and at least one of the stage and the mask stage is projected into the optical path space corresponding to the flow of the surrounding atmosphere from the downstream side.

Further, preferably, the supply mechanism has two gas supply portions arranged at positions opposed to each other with the optical path space interposed therebetween and having different supply amounts.

Further, preferably, a height adjusting member for smoothing a height change between the substrate stage, the substrate chuck mounted on the substrate stage, and the substrate chucked by the substrate chuck and its periphery. And are further provided.

Preferably, a four-sided shield member surrounding the optical path space is further provided, and the height of one side of the four-sided shield member is different from the other three sides.

Further, preferably, the stage is controlled so as to decelerate the stage before the opening area of the optical path space is minimized.

A device manufacturing method according to the present invention for achieving the above object has the following configuration. That is, the device manufacturing method includes a transfer step of transferring a pattern onto a substrate coated with a photosensitive material, and a developing step of developing the substrate, using the exposure apparatus according to claim 1. .

[0020]

Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.

[First Embodiment] FIGS. 1 and 2 are views showing a part of an exposure apparatus according to the first embodiment of the present invention. In particular,
2 is a schematic diagram showing a lower part of a projection optical system (lens barrel) of an exposure apparatus, a periphery of a wafer, and a control system, and FIG. 2 is a view looking down from AA ′ of the exposure apparatus of FIG.

This exposure apparatus is provided with a light source for generating short-wavelength laser light such as an F ₂ excimer laser (not shown) as illumination light, and the light source emits illumination light (exposure light) with an appropriate illumination optical member. The reticle (mask) is evenly illuminated through. The light (exposure light) that has passed through the reticle reaches the surface of the wafer 103 held by the wafer chuck 104 mounted on the wafer stage 102 via various optical members forming the projection optical system 101, The reticle pattern is imaged here.

The wafer stage 102 has a three-dimensional direction (X
It is configured to be movable in the YZ direction). The reticle pattern is sequentially projected and transferred onto the wafer 103 by a so-called stepping and repeat method in which stepping movement and exposure are repeated. Moreover, even when the present invention is applied to a scan exposure apparatus, the configuration is almost the same.

At the time of exposure, a temperature-controlled inert gas (for example, nitrogen gas, helium gas, etc.) is passed between the shield member 115 below the projection optical system 101 and the wafer 103 via the air supply valve 111. A space (hereinafter, referred to as an optical path space) 116 including a space through which light passes and its periphery is supplied from an air supply port 113. Part of the inert gas supplied to the optical path space 116 is recovered by the exhaust port 114 and exhausted via the exhaust valve 112. The air supply valve 111, the air supply port 113, the exhaust port 114, the exhaust valve 112, etc. are an example of a gas flow forming mechanism that forms a flow of a gas such as an inert gas in the optical path space 116.

Further, a temperature control gas (dry air or a low-concentration inert gas) is supplied to the chamber 200 on the wall surface of the chamber 200 in which the exposure apparatus main body including the projection optical system 101, the wafer stage 102, the wafer chuck 104, and the wafer 103 is sealed. Air supply unit 1 to be supplied into 200 through a filter 124
21 and an exhaust unit 122 for recovering the gas in the chamber 200 and exhausting the gas to the outside.

The arrows in FIG. 1 indicate the flow of gas.

Basically, the oxygen concentration in the exposure atmosphere is lowered by setting the optical path space 116 to a positive pressure with respect to the surrounding atmosphere. Therefore, the supply amount of the inert gas leaking from the optical path space 116 to the peripheral space is larger than the exhaust amount exhausted through the exhaust valve 112. As the inert gas leaking out of the optical path space 116, a temperature control gas (dry air or an inert gas of low concentration) is supplied from the air supply unit 121 through the filter 124, and the exhaust unit 12 together with the surrounding atmosphere.
It is recovered and exhausted at 2. This ambient atmosphere controls the temperature around the exposure area.

Opening and closing of the air supply valve 111 and the exhaust valve 112, the air supply valve 120 for supplying the temperature control gas, the exhaust valve 123 for exhausting the inert gas, and the wafer 1.
The replacement wafer exchange door 125 of No. 03 is controlled by the environment controller 131. Also, the wafer stage 102
Are controlled by the stage controller 132. Environmental controller 13
The main controller 133 controls the 1 and stage controller 132 and other controllers (not shown) in a centralized manner during various operations such as wafer exchange, alignment operation, and exposure operation. The monitoring device 134 monitors the control content of the main controller 133 and the operating state of the exposure apparatus.

When the wafer stage 102 is not under the optical path space 116, such as when a wafer is exchanged, the optical path space 11 is caused by the flow of the surrounding atmosphere flowing from left to right in the figure and the diffusion of gas.
The inert gas concentration in 6 does not reach the desired gas concentration.
In this case, since the supply amount of the inert gas in the optical path space 116 is set to be equal to or larger than the exhaust amount, the inert gas leaked from the optical path space 116 is discharged from the exhaust part 122 to the outside of the chamber 200 together with the surrounding atmosphere. Exhausted to. Further, even when the wafer stage 102 plunges under the optical path space 116, it takes about several seconds until the desired inert gas concentration is reached again.

Therefore, after the wafer is exchanged, the optical path space 11
In order to increase the concentration of the inert gas in 6 in a short time, the inert gas leaked from the optical path space 116 is used.

Specifically, the inert gas leaked from the optical path space 116 is pushed back by pushing the wafer stage 102 into the optical path space 116 from the downstream side of the flow of the ambient atmosphere, and the inert gas leaks from the optical path space 116. Suppresses the amount of gas entrained in the optical path space.

Further, by providing the wafer exchange door 125 on the downstream side of the flow of the ambient atmosphere, the optical path space 116 can be immediately transferred from the downstream side of the flow of the ambient atmosphere after the exchange of the wafer 103.
It is possible to make the wafer stage 102 plunge into.

As a result, as compared with the case where the wafer stage 103 is inserted into the optical path space 116 along the flow of the peripheral atmosphere or vertically, the wafer stage 102 is inserted while suppressing the entrainment of the peripheral atmosphere in the optical path space 116. You can As a result, the time required to replace the gas in the optical path space 116 with the inert gas can be shortened.

Further, in the first embodiment, the supply amount of the inert gas to the optical path space 116 becomes equal to or larger than the exhaust amount, that is, the pressure inside the optical path space 116 becomes a positive pressure with respect to the pressure around the optical path space 116. Is set. But this is the same pressure,
Alternatively, when the negative pressure is set, the optical path space 116
Even if the wafer stage 102 is rushed from the downstream side of the flow of the surrounding atmosphere, the amount of the inert gas leaking from the wafer is small.
A larger amount of gas other than the gas leaked from the optical path space 116 is caught in the optical path space and pushed back, so that the effect of shortening the replacement time cannot be obtained.

Although the exhaust unit 114 connected to the optical path space 116 is provided in the first embodiment, the exhaust unit connected to the optical path space is not always necessary for the above reason.

In the first embodiment, the wafer exchange door 125
Was provided downstream of the flow of the surrounding atmosphere, but is not limited to this. For example, even when the wafer stage 102 is provided in another place, the wafer stage 102 is once moved to the downstream side of the flow of the ambient atmosphere, and then the wafer stage 102 is thrust into the optical path space 116 to push back the high-concentration inert gas. At the same time, the wafer stage 102 can be projected below the optical path space 116, and as a result, the time required to replace the gas in the optical path space 116 with an inert gas can be shortened.

[Second Embodiment] FIG. 3 is a view showing a part of an exposure apparatus according to the second embodiment of the present invention. In the second embodiment,
The replacement time is further shortened by adding / changing the following four configurations to the first embodiment.

First, the height of the outside of the wafer 103 held by the wafer chuck 104 on the wafer stage 102 is inclined so that the change in height between the wafer 103 and the outside is gentle. An adjusting plate 181 is arranged. The height adjusting plate 181 is provided in the optical path space 116 when the wafer 103 enters the optical path space 116.
A rapid change in the aperture ratio below is suppressed, and the exhaust efficiency of the optical path space 116 is improved.

Secondly, as shown in FIG. 4, the moving speed of the wafer swage 102 is controlled to be temporarily reduced. As a result, like the height adjusting plate 181, the optical path space 116 when the wafer 103 enters the optical path space 116.
A rapid change in the aperture ratio below is suppressed, and the exhaust efficiency of the optical path space 116 is improved.

In FIG. 4, A is the rush start time when the wafer 103 or the height adjusting plate 181 plunges under the optical path space 116, and B is the wafer 103 or the height adjusting plate 1.
Reference numeral 81 is a rush completion time when the rush into the optical path space 116 is completed.

Thirdly, air supply units 193 and 194 for injecting the inert gas from the air supply passage into the optical path space 116 via the flow rate controllers 191 and 192 for controlling the flow rate of the inert gas.
To face each other. Also, the optical path space 1
The shielding members on four sides surrounding 16 are arranged, the shielding members on three sides of the shielding members have the same height, and the height of the shielding member on the remaining one side to the wafer 103 is increased. Embodiment 2
Then, the height from the air supply unit 193 located on the downstream side of the flow 195 of the surrounding atmosphere to the wafer 103 is made larger than the other three sides. This is to improve the exhaust efficiency of the optical path space 116 on the downstream side of the flow 195 of the surrounding atmosphere that is less susceptible to the flow 195 of the surrounding atmosphere.

Fourth, the supply amount of the inert gas from the upstream air supply unit 194 of the flow 195 of the surrounding atmosphere is made larger than the supply amount of the inert gas from the downstream air supply unit 193. . From the air supply unit 193 on the downstream side, for example, the optical path space 1
The inert gas is supplied only to the upper part in 16. here,
Since the gas in the optical path space 116 has a strong tendency to flow in the same direction as the gas in the peripheral space, the amount of the inert gas supplied from the upstream air supply unit 194 is reduced by the amount of the inert gas supplied from the downstream air supply unit 193. It is possible to shorten the replacement time with the inert gas in the optical path space 116 by increasing the supply amount. Further, when the inert gas is supplied only from one direction, there is a tendency that the replacement of the gas in the part far from the supply port (for example, the part P in FIG. 3) is delayed. It is preferable to provide the parts 193 and 194.

In the second embodiment, the height of one side of the shielding members on the four sides surrounding the optical path space 116 is changed, but the height may be partially changed instead of changing the height of all the sides. It is possible to obtain the same effect.

Further, by adding / changing all or part of the above-mentioned three points to the first embodiment, the exhaust efficiency of the optical path space 116 can be further enhanced and the replacement time can be further shortened.

Further, in the portion marked with P in FIG. 3, as described above, when the inert gas is supplied from only one side, the gas flow tends to be slow. Therefore, when processing the wafer 103 which emits a contaminant, the contaminant tends to accumulate in the portion P. However, as in the second embodiment, the inert gas is supplied to the optical path space 116 from the opposing air supply sections 193 and 194, and the air supply section 193 located on the downstream side of the flow of the ambient atmosphere surrounding the optical path space 116.
This problem can be solved by increasing the height from the wafer to the wafer 103 as compared with the other three sides to increase the flow velocity in the P portion.

[Third Embodiment] In the first and second embodiments,
The invention applied between the projection optical system and the wafer stage can also be applied between the illumination optical system and the reticle stage and between the reticle stage and the projection optical system. FIG. 5 is a diagram showing an exposure apparatus to which the present invention is applied between the projection optical system and the wafer stage, between the illumination optical system and the reticle stage, and between the reticle stage and the projection optical system. .

Note that, in FIG. 5, the same reference numerals are added to the components common to FIG. Further, the environment controller 131, the stage controller 132, the main controller 133, the monitoring device 134, etc. are not shown.

In the exposure apparatus shown in FIG. 5, the projection optical system 10
First optical path space 11 between the final optical member (cover glass) 144 of No. 1 and the wafer chuck 104 (wafer 103)
6, the air supply valve 111 is provided in the first optical path space 116.
A first air supply port 113 for supplying an inert gas through the first exhaust port 114 and an exhaust valve 112 for exhausting the inert gas or the like from the first optical path space 116 through the first exhaust port 114 are provided.

The second optical path space 140 between the illumination optical system 150 for illuminating the reticle (mask) 141 and the reticle stage 142 (reticle 141) is the second optical path space 140. A second air supply port 131 for supplying an inert gas to the air through the air supply valve 130, and an exhaust valve 13 for exhausting an inert gas or the like from the second optical path space 1140 through the second exhaust port 132.
3 is provided.

Further, regarding the third optical path space 143 between the reticle stage 142 and the projection optical system 101,
A third air supply port 133 that supplies an inert gas to the optical path space 143 via the air supply valve 134, and the third optical path space 1
An exhaust valve 137 for exhausting an inert gas or the like from 43 through the third exhaust port 136 is provided.

The amount of air supplied from each of the first to third air supply ports 113, 131, 135 connected to each optical path space is equal to or more than the amount of air exhausted from each of the first to third air exhaust ports 114, 132, 134. And the first to third optical path spaces 116, 1
The inert gas leaking from the optical path spaces 40 and 143 is collected and exhausted from the exhaust unit 122 together with the ambient atmosphere flowing for temperature control from the air supply unit 121.

By providing the wafer exchange door 125 on the downstream side of the flow of the peripheral atmosphere, the wafer stage 102 can be thrust into the first optical path space 116 from the downstream side of the flow of the peripheral atmosphere immediately after the exchange of the wafer 103. It is possible. That is, the wafer stage 102 can be pushed in while pushing back the inert gas flowing out from the first optical path space 116. As a result, the time required to replace the gas in the optical path space 116 with the inert gas can be shortened.

Similarly, by providing the reticle door 139 on the downstream side of the flow of the ambient atmosphere, the second and third reticle doors 139 can be quickly replaced from the downstream side of the flow of the ambient atmosphere after the reticle 103 is replaced.
The reticle stage 142 can be projected into the optical path spaces 140 and 143. That is, the reticle stage 142 can be pushed in while pushing back the inert gas flowing out from the second and third optical path spaces 140 and 143. As a result, the time required to replace the gas in the second and third optical path spaces 140 and 143 with the inert gas can be shortened.

The reticle stage 142 is controlled by the stage controller 132 in synchronization with the wafer stage 102. Further, a wafer exchange door 125 for exchanging the wafer 103 and a reticle exchange door 1 for exchanging the reticle 141.
39, the air supply valves (111, 130, 134) and the exhaust valves (112, 133, 137) are controlled by the environmental controller 131. The environment controller 131, the stage controller 132, and other controllers (not shown) are centrally controlled by the main controller 133 during various operations such as wafer exchange, alignment operation, and exposure operation. The monitoring device 134 monitors the control content of the main controller 133 and the operating state of the exposure apparatus.

[Application Example of Exposure Apparatus] Next, a semiconductor device manufacturing process using the above-described exposure apparatus will be described.

FIG. 6 shows the flow of the whole semiconductor device manufacturing process.

In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (mask making), a mask is made based on the designed circuit pattern. On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the mask and wafer described above.

The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip by using the wafer manufactured in step 4, an assembly process (dicing, bonding), a packaging process (chip encapsulation). Etc. including the assembling process. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. The semiconductor device is completed through these processes, and is shipped in step 7.

FIG. 7 shows the detailed flow of the wafer process.

In step 11 (oxidation), the surface of the wafer is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted in the wafer. In step 15 (resist process), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern is transferred onto the wafer by the above-mentioned exposure apparatus. In step 17 (development), the exposed wafer is developed. In step 18 (etching), parts other than the developed resist image are removed. In step 19 (resist peeling), the unnecessary resist after etching is removed. By repeating these steps,
Multiple circuit patterns are formed on the wafer.

[0061]

As described above, according to the present invention,
For example, a space between the projection optical system and the substrate, a space between an illumination optical system that illuminates a mask (for example, a reticle) and a mask stage that holds the mask, or a space between the mask stage and the projection optical system. It is possible to provide an exposure apparatus capable of shortening the time required to replace the gas in the optical path space including the space (exposure region) through which the exposure light passes, such as the above space, with the inert gas.

[Brief description of drawings]

FIG. 1 is a diagram showing a part of an exposure apparatus according to a first embodiment of the present invention.

FIG. 2 is an A- of the exposure apparatus of FIG. 1 according to the first embodiment of the present invention.
It is the figure which looked down from A '.

FIG. 3 is a diagram showing a state when plunging into an optical path space according to a second embodiment of the present invention.

FIG. 4 is a diagram showing the progress of the stage speed when entering the optical path space according to the second embodiment of the present invention.

FIG. 5 is a diagram showing a part of an exposure apparatus including a reticle periphery according to a third embodiment of the present invention.

FIG. 6 is a flowchart of an overall manufacturing process of a semiconductor device.

FIG. 7 is a flowchart of an overall manufacturing process of a semiconductor device.

FIG. 8 is a diagram showing a part of a conventional exposure apparatus.

Claims (11)

[Claims] 1. An exposure apparatus for projecting and transferring a pattern formed on a mask onto a substrate by using exposure light, comprising a stage for holding at least one of the substrate and the mask, an optical system, and A flow of an inert gas is formed in an optical path space including a space through which exposure light passes between the stage and the optical system, and the supply amount of the inert gas supplied to the optical path space is a gas containing the inert gas. And a gas flow forming mechanism having an exhaust amount equal to or larger than the exhaust amount for exhausting the stage, wherein the stage is thrust into the space below the optical path space from the downstream side with respect to the flow of the surrounding atmosphere. 2. An exposure apparatus for projecting and transferring a pattern formed on a mask onto a substrate by using exposure light, a stage for holding at least one of the substrate and the mask, an optical system, and A flow of an inert gas is formed in an optical path space including a space through which exposure light passes between the stage and the optical system, and the supply amount of the inert gas supplied to the optical path space is a gas containing the inert gas. And a gas flow forming mechanism having an exhaust amount equal to or more than the exhaust amount, and having a replacement door for replacing at least one of the substrate and the mask on a downstream side with respect to a flow of a surrounding atmosphere. Exposure equipment. 3. The exposure according to claim 1, wherein an exchange door for exchanging at least one of the substrate and the mask is arranged on the downstream side with respect to the flow of the peripheral atmosphere. apparatus. 4. The exposure apparatus according to claim 1, wherein the inert gas is nitrogen gas or helium gas. 5. The gas flow forming mechanism includes at least a supply mechanism of a supply mechanism that supplies an inert gas to the optical path space and an exhaust mechanism that exhausts a gas containing an inert gas from the optical path space. The exposure apparatus according to claim 1 or 2, characterized in that. 6. The gas flow forming mechanism, wherein the first gas flow forming mechanism is arranged to form a flow of an inert gas in a first optical path space between the projection optical system and the substrate, and the mask is illuminated. A second gas flow forming mechanism arranged so as to form a flow of an inert gas in a second optical path space between the illumination system and the mask stage holding the mask, the mask stage and the projection optical system. And a third gas flow forming mechanism arranged to form a flow of an inert gas in the third optical path space between the stage and the mask stage. The exposure apparatus according to claim 1 or 2, wherein at least one of them is made to enter the corresponding optical path space from the downstream side with respect to the flow of the ambient atmosphere. 7. The exposure apparatus according to claim 5, wherein the supply mechanism has two gas supply units which are arranged at positions facing each other with the optical path space interposed therebetween and which supply different amounts of gas. 8. A substrate stage, a substrate chuck mounted on the substrate stage, and a height adjusting member for smoothing a height change between the substrate chucked by the substrate chuck and its periphery. Claim 1 or Claim 2 further comprising:
The exposure apparatus according to. 9. The method according to claim 1, further comprising a shield member having four sides surrounding the optical path space, wherein the height of one side of the shield members of the four sides is different from the height of the other three sides. The exposure apparatus according to. 10. The exposure apparatus according to claim 1, wherein the stage is controlled so as to decelerate the stage before the opening area of the optical path space is minimized. 11. A device manufacturing method, comprising a transfer step of transferring a pattern onto a substrate coated with a photosensitive material by using the exposure apparatus according to claim 1, and a developing step of developing the substrate. And a device manufacturing method.