JP2002516240A - Substrate transfer / processing method and apparatus - Google Patents

Abstract

(57) [Summary] The present invention enables high-speed movement of a large glass substrate from one processing station to another processing station. Drives in different chambers perform such movements in a synchronized manner to move the glass substrates on the shuttle at the appropriate times. In the system according to the invention, at least a first and a second chamber are provided. Generally, the first chamber is a load lock chamber 50, 52 and the second chamber is processing chambers 54A-54C. A substrate transport shuttle is used, for example, to move a substrate along a guide path defined by guide rollers. A drive mechanism is provided in most chambers to drive the shuttle along the relevant portion of the guide path. A control system is provided for powering the drive mechanism of the first chamber to drive the substrate transport shuttle through the intermediate position from the first position to the second position.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[Related application]

SUMMARY OF THE INVENTION The present invention relates to a Modular Cluster Processing System, filed October 8, 1997.
No. 08 / 946,922. The present invention also relates to the following U.S. patent applications filed on the same date as the present application. That is, (1) “Multi-function chamber for substrate processing system (Multi-Function
on Chamber For A Substrate Processin
g System)] [Attorney case reference number 2712 / US / AKT (0554)
2/268001)], (2) “Automatic substrate processing system (An Automat)
ed Substrate Processing System) ”[Attorney's Case Reference Number 2429 / US / AKT (05542/245001)], (3)
“Substrate Transfer Shuttle with Magnetic Drive
er Shuttle Having a Magnetic Drive) "
[Attorney case reference number 2638 / US / AKT (05542/264001)]
, (4) Substrate Transfer Shu
tle)] [Attorney case reference number 2688 / US / AKT (05542/26)
5001)], (5) “In-Situ Substr.
ate Transfer Shuttle)] [Attorney case reference number 2703
/ US / AKT (05542/266001)], (6) "Modular Substrate Processing Sys."
tem)] [Attorney case reference number 2311 / US / AKT (05542/233)
001)], and (7) “Isolation Valves” [
Agent Case Reference Number 2157 / US / AKT (05542/226001)].

The aforementioned patent applications assigned to the assignee of the present application are incorporated herein by reference.

[0003]

TECHNICAL FIELD OF THE INVENTION

The present invention relates to substrate processing, and more particularly, to transferring a substrate to and from a processing chamber.

[0004]

[Prior art]

For example, glass substrates are used for applications such as active matrix televisions and computer displays. When the glass substrate is large, multiple display monitors can be formed, and each monitor may include one million or more thin film transistors.

The processing of large glass substrates involves the properties of a number of consecutive steps including, for example, the properties of a chemical vapor deposition (CVD) process, a physical vapor deposition (PVD) process or an etching process. There are many. Glass substrate processing systems include:
One or more process chambers for performing these processes are included.

The glass substrate may have a size of, for example, 550 mm × 650 mm. Recent substrate sizes, for example, tend to move to larger sizes, such as 650 mm × 830 mm or larger, which allows more displays and larger size displays on the substrate. The larger the size, the higher the demands on the processing system capacity.

[0007] Among the basic processing techniques for depositing thin films on large glass substrates are, for example, those substantially similar to those used in the processing of semiconductor wafers. However, in spite of some similarities, the processing of large glass substrates, using the techniques currently used for semiconductor wafers and smaller glass substrates, is not a practical method or cost. A number of problems have arisen that cannot be solved in terms of efficiency.

For example, in order to efficiently process a production line, it is necessary to move a glass substrate at high speed between workstations and between a vacuum environment and an atmospheric environment. As the size and shape of the glass substrates increase, it becomes difficult to transport them from one position of the processing system to another. As a result, cluster tools suitable for vacuum processing semiconductor wafers and smaller glass substrates, such as substrates up to 550 mm x 650 mm, require larger glass substrates, such as 650 m
It is not very suitable for performing the same processing on a material having a size of mx 830 mm or more. In addition, cluster tools require a relatively large floor area.

One way to improve such a processing tool is to use Applied Komatsu Technology, Inc. of Santa Clara, California.
channels, Inc. ) Was transferred to "MODULAR CLUSTER PROCESSING SYSTEM"
And US patent application Ser. No. 08 / 946,922, the entire contents of which are incorporated herein by reference. The use of a modular processing system to move substrates outside the processing area on a conveyor or robot on a truck is disclosed. Movement of the substrate within the processing area is performed by a substrate transporter. In this type of system, the transporter may be in any load lock after moving the substrate into or out of the processing chamber.

[0010] Similarly, chamber structures intended for processing relatively small semiconductor wafers are not well suited for processing these large glass substrates. The chamber contains
An opening sized to carry large substrates into or out of the chamber must be included. In addition, substrates in the processing chamber must be processed under vacuum or low pressure. Therefore, to move a glass substrate between processing chambers,
At the same time it is possible to close particularly large apertures to create a vacuum tightness,
The need to use valve mechanisms to minimize contamination arises.

[0011] Furthermore, even if there are relatively few defects, the entire monitor formed on the substrate will be rejected. Therefore, when the substrate is transported from one place to another, it is important to reduce the occurrence of defects in the glass substrate. Similarly, if the substrate is misaligned when transported and positioned in the processing system, once glass is formed on the display, one edge of the glass substrate will not function electrically. Until then, the uniformity of processing may be degraded. If the degree of misalignment is severe, the substrate may hit the structure and even destroy the interior of the vacuum chamber.

Another problem associated with processing large glass substrates is caused by their unique thermal properties.
For example, if the thermal conductivity of glass is relatively low, it becomes more difficult to heat or cool the substrate uniformly. In particular, the heat loss near the edge of any large thin substrate tends to be greater than near the center of the substrate, making it impossible to maintain a constant temperature gradient over the entire substrate. Therefore, when the thermal characteristics of a glass substrate are combined with its size, it becomes more difficult for electronic components formed on different portions of the substrate surface to be processed to obtain uniform characteristics. In addition, rapid and uniform heating or cooling of the substrate is difficult due to its low thermal conductivity, thereby reducing the ability of the system to be capable of high throughput.

As noted above, efficient processing of a production line requires high speed movement of the glass substrate from one workstation or processing area to another. If the glass substrate is large, it is particularly difficult to handle and fragile, so that this process is further complicated.

[0014]

【Overview】

According to the present invention, a large glass substrate can be moved at high speed within a processing station or from one processing station to another. Such movement is performed in a synchronized manner so that drives in different chambers move the glass substrate onto the shuttle at an appropriate time. In a system according to one embodiment of the present invention, at least a first and a second chamber are provided. Generally, the first chamber is a load lock and the second chamber is a processing chamber. Processing chambers include inspection stations, CVD chambers, PECVD chambers, PVD
It may include a chamber, a post-annealing chamber, a cleaning chamber, a descum chamber, an etching chamber, or a combination of these chambers. Load locks may be used to heat or cool a substrate. Two load locks may be used, one for heating and one for cooling. The load locks each include a platen that supports the substrate.

For example, a substrate transport shuttle is used to move a substrate along a guide path defined by guide rollers. A drive mechanism is often used, especially between chambers, to drive the shuttle along the relevant portion of the path. Powering a drive mechanism adjacent to the first chamber to move the second mechanism from the first position to the second mechanism;
A control system is provided for driving the substrate transport shuttle via the intermediate position toward the position. In the intermediate position, the substrate transport shuttle begins to engage and
Is moved by a drive mechanism adjacent to the first chamber. The control system receives an input resulting from movement induced by a drive mechanism adjacent to the second chamber, the input representing a substrate transport shuttle that has moved a predetermined distance past an intermediate position.
This input is then used to synchronize the substrate transport shuttle from the first chamber to the second chamber. Such synchronization may include reducing power to a drive mechanism adjacent to the first chamber and / or providing power to a drive mechanism adjacent to the second chamber.

Implementations of the invention may include one or more of the following. With several processing chambers, the movement of the shuttle to each chamber may be synchronized, as described above. Such synchronization may be caused to cause the shuttle to move back and forth. With more than one shuttle, multiple shuttles may operate individually.

Preferably, by detecting the shuttle position using the sensor, feedback may be provided to the drive mechanism to command the change of the shuttle position, for example, the movement if an error is detected in the positioning. . In this manner, an error correction method may be implemented that permeates the entire processing chamber and load lock. The sensors may be, for example, magnetic or optical. In addition, the use of sensors prevents the shuttle from hitting the chamber walls or from falling outside the operating range of the drive mechanism. In this way, the shuttle always has at least one
It may be driven by two driving mechanisms.

With such a system, the synchronization of the driving components is facilitated, so that the films can be flexibly classified in the semiconductor processing system.

Another advantage of the present invention is that substrates can be quickly and accurately dispensed to precise locations in the treatment chamber even when the chamber expands due to elevated temperatures. This makes it easier to use a given chamber to perform the process at different temperatures, since it is not necessary to calibrate the drive mechanism based on the operating temperature of the chamber.

[0020] Further advantages of the invention may include one or more of the following. The present invention avoids unnecessary substrate movement in semiconductor or glass TFT processing systems. For example, the substrates may be all transported horizontally except for loading and unloading on a susceptor. The present invention does not use more expensive and cumbersome vacuum robots and transport chamber systems. The present invention allows the removal of the substrate shuttle from the processing chamber while reducing contamination during processing.

[0021] One or more embodiments of the present invention are described in detail in the accompanying drawings and the description below. Other features, objects, and advantages of the invention will be apparent from the description and drawings, and from the claims.

The same reference numbers and symbols in the various figures indicate the same elements.

[0023]

BEST MODE FOR CARRYING OUT THE INVENTION

FIG. 1 illustrates a processing area 42 of an assembly system according to one embodiment of the present invention. Arrow 101 points in a direction from “upstream” to “downstream” in the processing area. The processing area 42 includes a substrate heating load lock chamber 5 at a first end of the processing area.
A substrate cooling load lock chamber 52 is provided at the second end of the processing zone, which is at a longitudinal end opposite to the first end and downstream of the first end. It goes without saying that the terms "heating" and "cooling" are not limiting. Rather, these terms are intended to describe exemplary features that such chambers process.

Between the load lock chambers 50 and 52 are a plurality of processing chambers 54 A to 54 C connected in series between the load lock chambers. Each processing chamber 5
4A to 54C include first and second gate valves 56A to 56C and 58A to 58C at the first and second ends of each processing chamber, respectively (see also FIG. 3). The gate valve 56A is connected to the load lock chamber 5
0 is selectively sealed, and the substrate is transported through the gate valve 56A when opened. Similarly, the gate valve 58C closes the load lock chamber 52 from the processing chamber 54C.
Is selectively sealed, and the substrate is transported through the gate valve in the open state. The gate valves 58A and 56B allow the second processing chamber 54B to close from the first processing chamber 54 when closed.
A is sealed, and the substrate is transported through the gate valve at the time of opening. Similarly, gate valve 58B
And 56C are closed from the third processing chamber 54C to the second processing chamber 5C.
4B is selectively sealed, and the substrate is transported through the gate valve in an open state. Valve pair 58
A and 56B and 58B and 56C describe the advantages of this structure below, but may be replaced by a single valve. One example of a type of valve that may be used is the "Isolation Va," filed on the same date as the present application and incorporated herein by reference.
lves) "of the aforementioned US patent application [Attorney Docket No. 21
57 (226001)].

The detailed description of the patent application describes an embodiment using a glass substrate. The term "substrate" is intended to cover a wide range of any object processed in a processing chamber, including flat panel displays, glass or ceramic plates, plastic sheets or disks. The present invention has a size of 650 mm × 8
It is particularly applicable to large substrates such as glass plates of 30 mm or more.

In this system, the substrate is supported on support fingers. The supporting fingers are shown in FIG.
, 4, 7D, 14 may be all parallel, or may be beveled, as shown in the embodiments of FIGS. 2B-2C and 7E. . In the described embodiment, the short dimension of the substrate is substantially parallel to the direction of movement within the processing zone.

FIGS. 1 and 3 show the substrate transport shuttle in each of the load locks 50 and 52. As shown in FIG. 3, load lock chambers 50 and 52 have gate or slit valves 60 and 62, respectively, located along one side of the processing area. These valves 60 and 62 (FIG. 3) selectively seal the associated load lock chamber from the atmosphere when closed and allow the substrate to be introduced or removed from the load lock chamber when open. In FIG. 3, the gate valve 5
6A, 58A, 56B, and 58B show an open state, and gate valves 56C and 58C show a closed state.

The substrate is placed in a load lock chamber 50 serving as an inlet load lock chamber.
May be introduced via The load lock chamber 50 is connected to the atmosphere and the processing chamber 54.
A is sealed from A, the load lock chamber is evacuated, and the substrate is heated.

With such a load lock system, a stepwise vacuum is created. That is, the vacuum in the processing chamber does not need to be discarded for the substrate to be loaded and removed. Before the load lock opens the gate valve that separates them from the processing chamber,
Because they are independently pumped down, the pump of the processing chamber need only evacuate the chamber that is already partially evacuated. That is, the processing chamber pump need only maintain, rather than develop, the processing chamber state. Such capabilities are particularly important, for example, in physical vapor deposition (PVD) where the lowest pressure is often required in any process.

Each load lock chamber may be multifunctional. Processing steps such as heating, cooling and descum processing may be applied to each load lock. Heating and cooling may be performed by moving the heating plate and the cooling plate to a contact position and a non-contact position with the substrate. Generally, the load lock 50 is used for heating and descum processing, while the load lock 52 may be used for cooling. Further, an ashing process may be performed in these chambers. The substrate then passes through processing chambers 54A-54C. In each processing chamber,
Certain semiconductor processing may be performed on the substrate. In some processing chambers, ashing or descum processing may be performed. Further details of a multi-function load lock can be found in “Multi-Function Chamber for substrate processing systems, filed on the same date as this application and incorporated herein by reference.
US Patent Application (Attorney Docket No. 2712 (268001)) entitled "Substrate Processing System."
It is described in.

The substrate to be processed may be cooled in a cooling load lock chamber 52, which will be an exit load lock chamber, and may be brought to atmospheric pressure. After that, the substrate
It may be removed from the system through valve 62. The loading and unloading of substrates between load lock chambers 50 and 52 are performed by robots 64A and 64B, respectively.
(See FIG. 1). Alternatively, only one robot may be used to operate on a truck or conveyor to introduce or remove substrates.

Each robot has lift forks 66A, 66A at the ends of arms 68A, 68B.
B includes an end effector. At its proximal end, each arm 68A, 6A
8B is coupled to an associated vertical linear actuator (not shown) to raise and lower the arm and lift fork. Referring to FIGS. 2A and 2C, the upper portions of the lift forks 66A and 66B have a number of supports 154 thereon to support the substrate 126 on top of the forks 66A, 66B.

For example, the robot 64 A can pull out and return a substrate to and from the substrate holding cassette. In the first loading position, the robot 64A may load a substrate into the processing area load lock chamber 50 through a gate or slit valve 60 (FIG. 3). Robot 64B operates in a manner similar to robot 64A. Further details of the robot are described in the "Modular Substrate Processing System," filed on the same date as the present application and incorporated herein by reference.
Processing System) "in a U.S. patent application entitled" Invention. " In the first or lowered position, the fork 66A may be inserted under the substrate in the cassette or on the shuttle in the load lock chamber. The design of the fork is such that the same fork can be used in any case, and it is easy to obtain significant advantages in integrating this system into an existing production line.

When raised to an intermediate position, supports or pads 154 (FIG. 2A) along the upper surface of the fork 66A or, more specifically, the upper surface of the teeth of the fork.
And see FIG. 2C) engage the lower surface of the substrate 126. When raised further to the second or raised position, fork 66A disengages from the cassette or shuttle and lifts substrate 126.

During loading, the substrate is introduced into the load lock heating chamber 50 via the slit valve 60 because the loading end effector 66 A is rotated by 180 ° by the z-rotation actuator of the robot 64 A. By making fine adjustments by adjusting the height of the substrate 126 with a z-linear actuator, the substrate 126 enters unhindered through the slit valve 60 (FIG. 3). While loading the substrate, slit valve 60 is open and the substrate is moved by the y linear actuator in the y direction. With this movement, the substrate is loaded into the load lock chamber 50 and lowered to the shuttle 70 using the z linear actuator. Next, the empty end effector 66A
May be withdrawn from the chamber. The slit valve 60 is then closed and the heating and evacuation process begins.

Associated with each load lock chamber 50 and 52 are transport shuttles 70 and 72, each having a structure for transporting substrates between the chambers. First
And the second shuttle 70 and 72 heat the substrate to the load lock chamber 50.
, And placed in the heating and cooling load lock chambers, respectively, while removing the substrate from the cooling load lock chamber 52. Transport shuttles 70 and 72 may be made of stainless steel, stainless steel, ceramic, or any other similar material. Invariant steels having a low coefficient of thermal expansion may be preferred.

The load lock chambers 50 and 52 include a maintenance window or slit 152 (
FIG. 1) is attached. The presence of these windows 152 allows parts to be removed from the load lock for maintenance or repair. During such maintenance,
Shuttle and chamber parts may be repaired together.

Referring to FIGS. 1, 2B to 2C, 4, 7D to 7E, each shuttle 70, 72
Has a first end 31A facing from the associated load lock chamber in the direction of the adjacent processing chamber, and a second end 31B opposite the first end. Each shuttle further has a first side 32A and a second side 32B. The shuttles may be of an outer shape reflecting each other and are arranged facing each other.

Referring to FIG. 4 in more detail, it includes first and second side rails 74A and 74B along first and second sides of the shuttle, respectively. Both of these side rails extend generally between the first and second ends of the shuttle. The side rails are provided parallel to each other and at regular intervals. Each side rail includes a substantially flat horizontal strip 75. Along the outer portion of the lower surface of each strip 75, a rail supports a rack 76. An outer portion 77 on the underside of each rack supports angled teeth 33 (the shape of the teeth is not shown). The inner portion 78 on the underside of each rack has a flat structure for engaging a number of guide rollers, as described below. First and second cross members 80A and 80B, respectively, proximate to the first and second ends 31A and 31B of the shuttle, respectively, are structurally connected to the first and second side rails 74A and 74B of the shuttle. Each cross member is slightly recessed from the associated end of the shuttle, and each cross member includes a flat central horizontal extension strip 82. The first (83A and 84A) and the second (
The legs of 83B and 84B) are dependent on the first and second ends of the strip and connect such ends to the first and second side rails, respectively.

“X” indicates the center position of the substrate. This position X is substantially coincident with the center of the processing chamber when measured on a horizontal plane so as to process the substrate optimally.

The substrate support fingers 86A, 88A, 86B, 88B extend inwardly from the associated first and second side rails, respectively. Referring to FIGS. 4 and 5, each support finger has a proximal end 90 that extends upwardly from the associated siderail 75 and a distal end 92 that extends horizontally inward from the proximal end and terminates at a tip. At the tip, the top surface of each finger supports a pad 94 for supporting a substrate held by the shuttle. Pad 94 is preferably made of ceramic, stainless steel, quartz or other similar material, as the shuttle must be resistant to temperatures for heating the substrate up to about 460 ° C. or higher.

However, it should be noted that the temperature requirements of the substrate transport shuttle component may be lower than in conventional systems. In many conventional systems, such as cluster tools, after a substrate is removed from a heating chamber by a vacuum robot, the substrate is cooled by transporting the substrate to a processing chamber. One solution has been to overheat the substrate, taking into account cooling during transport.

In the present invention, the substrate transport shuttle 70 moves a substrate from a heating chamber directly to a processing chamber. Thus, if overheating is required, the requirements for overheating the substrate are relaxed.

FIG. 5 also shows inner and outer chamber walls 38 B and 38 A, respectively. The slot 38C in the inner wall 38B causes the shuttle flat rail 75 to extend into the opening in the inner wall 38B and engage the roller 98. In this way,
Contamination caused by the guide rollers 98 is minimized. Further, the processing performed in the chamber is maintained separate from the mechanical components that cause the shuttle to move.

The width of the lift forks 66A, 66B may be close, but is less than the distance between the two external support fingers 88A and 88B along one side of the shuttle 70. The center notch of the fork must be sized so as not to obstruct the center support finger 86A. In the embodiments of FIGS. 2B to 2C and 7E where diagonal support fingers are used, the width of the fork may be larger. In the preferred embodiment illustrated in FIGS. 2B to 2C and FIG. 7E, there are three support fingers associated with each siderail. That is, a center support finger 86A, 86B and two side diagonal support fingers 88A, 8A.
8B. Each support finger preferably extends about 15 to 30% of a dimension, such as the length or diagonal of the substrate, to properly support the substrate, and the length of the substrate (0
. 221) is more preferably about 22% longer. With reference to FIG. 2D, such an arrangement allows the substrate 126 to be heated by a flexure caused by the flexibility of the substrate, so that the flexed substrate sweeps as it moves along the flow path. Less. In particular, by assembling the fingers 86A, 86B, 88A, 88B and the pads 94 in the structure described above and placing the pads at approximately 22%, the substrate is moved from one processing chamber to another. Or, when moving between the processing chamber and the load lock, the flexed substrate sweeps less. Thus, the chance of the substrate colliding with, for example, a platen, a susceptor, or the like is substantially reduced. Such considerations are due to T
The substrate on which the FT is formed is particularly important since it has a thickness of only about 0.7 to 1 mm.

The height of the pad 94 is also important. This height must be selected so that the edges of the substrate do not directly contact the fingers as the heated substrate flexes. Important requirements on the quality of the resulting substrate depend on the process requirements.

Another advantage of such a structure is that the same support finger may be used to support several different sized substrates. Further, the position of the support fingers is adjusted to accommodate various substrate sizes. Further, the position of the pad 94 can be changed to suit different substrate sizes. The shuttle used for the load lock chamber 50 must be resistant to high temperatures.
It should be noted that the shuttle serving service 2 rarely reaches the maximum processing temperature and is therefore somewhat more forgiving.

FIGS. 1, 4, and 7D show an alternative embodiment in which the side support fingers 88A and 88B are not diagonal, but are parallel to the support fingers 86A and 88B. Other angled fingers may be used as appropriate to support the substrate.

By designing as described above, each shuttle can be moved 90 ° from each other.
It is possible to receive the substrate in two directions apart. First, the shuttle may introduce and remove substrates in a direction perpendicular to the side rails 74A and 74B. 2
First, the shuttle may introduce and remove substrates in a direction parallel to the side rails 74A and 74B. In any embodiment, as shown in FIGS. 2B to 2C, FIGS. 4 to 5 and FIGS. 8A to 8B, a plurality of stops 201 are provided to accurately position the substrate on the support fingers and to provide Alternatively, the substrate may not be accidentally shifted on the shuttle. Also, the substrate may be centered on the finger using a plurality of stoppers 201. Stopper 201 may have the general shape of an inverted truncated cone, such as an inverted truncated cone.

Along each side of the processing area (FIGS. 1, 3, 5, 7A to 7C), each load lock chamber and each processing chamber supports and guides one or both shuttles as they pass through the chambers. Guide roller pairs 9 arranged so that
8 (eg, two rollers on the side of the processing chamber and three rollers on the side of the load lock). The guide roller 98 does not generate Teflon® coated aluminum, Vespel®, or particulates,
It can be any other material that is flexible to reduce vibration. Alternatively, a suspension may be employed to smooth out the movement.

The guide rollers are all provided at substantially the same level and define a fixed path forward and backward of the shuttle. When the shuttle passes over the guide rollers, the guide rollers
The structure that engages the lower flat inner portion 78 of each rack determines the position and orientation of the shuttle and allows the shuttle to move smoothly along a predetermined path.

Referring to FIG. 3, between each of the processing chambers 54 A to 54 C and the load lock chamber there is a chamber shutoff valve whose housing includes a shuttle drive mechanism 100, respectively. As shown in FIGS. 1, 3, and 9, there is a drive mechanism 100 between chambers 50 and 54A, a drive mechanism 100 'between chambers 54A and 54B, and between chambers 54B and 54C. , And a drive mechanism 100 ″, between the chambers 54 C and 52. With respect to the drive mechanism 100, the drive mechanism may be considered to be within the chamber 50 because there is no valve door between the drive mechanism. Therefore, this drive mechanism may be referred to as a “first chamber drive mechanism”. Similarly, the drive mechanism 100 'is a "second chamber drive mechanism", and so on. When describing these drive mechanisms in general, it should be understood that the term “drive mechanism 100” is used herein and is generally described with respect to all of the above drive mechanisms. In addition, each drive mechanism 100 is associated with a pinion gear 106 that engages the shuttle rack and moves the shuttle along the relevant portion of the workflow path. Similarly, the driving mechanism 100 drives the pinion gear 106, and the driving mechanism 100 '
, And so on.

The above-described structure in which the driving mechanism is disposed in the valve housing reduces, for example, the contamination of fine particles in the processing chamber that is often required when forming a TFT. In addition, such a layout of the processing area facilitates high reference dimensions because each chamber has a similar structure and is interchangeable. With one drive mechanism in the housing of each shut-off valve, the length of the shuttle used is generally longer than the associated distance between the drive mechanisms, as described in more detail below. Further, the overall length of the shuttle used is generally longer than any processing chamber through which the shuttle passes.

As shown in FIG. 6A, each drive mechanism 100 is connected to a drive shaft assembly 104 outside the internal cavity of the associated chamber and extending into the interior of the load lock or valve housing. including. Inner chamber wall 38B is not shown for clarity. Drive shaft assembly 104 may use a vacuum compatible rotary feedthrough. The drive shaft assembly retains first and second pinion gears 106A and 106B adjacent the first and second sides of the associated chamber, and further includes first and second pinion gears, respectively, immediately inside the first and second pinion gears. It holds the first and second guide rollers 108A and 108B. This pinion gear may, for example, have 16 teeth per pinion gear and have a structure that meshes with the toothed outer portion 33 of the rack, whereas the guide rollers are located inside the shuttle rack passing through the drive mechanism. It has a structure that contacts the smooth surface of the part (see also FIGS. 4 and 5). Optionally, drive mechanism 100 includes an encoder 110 that inputs to control system 111 in response to rotation of the associated drive shaft assembly. A control system 111 is connected to any or each of the various chambers to control their operation and also to control any handling or processing of the equipment external to the processing area. The control system may consist of a user-programmable computer or other numerical controller incorporating appropriate software or firmware.

FIG. 6B shows an alternative embodiment where no drive shaft is used. In this configuration, the shuttle is driven from only one side and the motor drives the pinion gear 106 without the drive shaft assembly 104. Guide rollers 108A and 108B
In addition, the guide rollers 203 arranged on the lateral side are used to reliably move the shuttle straight in the horizontal direction so that no displacement occurs due to being driven only on one side. Good. Rollers 203 may be provided on both sides of the guide rail 112 to keep the shuttle 70 moving straight in a controlled direction.

It should be noted that in both of these embodiments it is not important that the guide roller is inside the pinion gear. In fact, in an alternative embodiment, the guide rollers are
It may be outside the pinion gear, or the relative position may be different on each side of the chamber row. In yet another embodiment, the guide rollers may be located on the substrate transport shuttle, and smooth and flat ridges are provided along each side of the row of chambers to support the shuttle guide rollers. You may.

In the following description, the placement of the substrate in the load lock chamber will be described with reference to FIGS. 7A to 7E. 7A to 7E, the support on which the substrate is disposed is referred to as a platen. The platen has a slot through which shuttle fingers move during substrate transfer. The placement of the substrate from the load lock chamber into the processing chamber
8A to 8B. 8A to 8B, the support on which the substrate is disposed is referred to as a susceptor. The susceptor has a passage with an extendable “T” shaped pin used during substrate transfer, as described below. Note that the above definitions for platens and susceptors are used herein for clarity. A susceptor in the processing chamber may be similarly referred to as a “platen”, and a load lock platen may be similarly referred to as a “susceptor”.

As shown in FIGS. 7A to 7C, each load lock chamber 50, 52 (
Only the chamber 50 is shown) includes a platen 120 for supporting the substrate during heating or cooling before or after processing. Pedestal 122 is platen 120
And can be raised and lowered to raise and lower the platen 120 between a first or reverse position and a second or extended position. Platen 120 is generally rectangular, slightly larger than the planar area of substrate 126, and has a plurality of channels 124 (FIGS. 7D and 7E) extending inward from opposite sides of the platen. The channels move the fingers 86A, 86B, 88A, 88 of the shuttle 70 (or 72) as the platen 120 rises or descends through the shuttle 70, as described below.
B has a structure for accommodating B.

[0059] Initially, the load lock chamber 50 is empty and shielded from the adjacent chamber 54A by a valve 56A. The load lock chamber 50 has an opening to the atmosphere, and the substrate can be introduced into the processing area by opening the slit valve 60 thereof. As shown in FIG. 7A, the robot end effector 66
A loads the substrate 126 into the load lock chamber 50. 7A to 7C essentially show a downstream view of the processing zone. The end effector and the substrate are arranged such that the lower side of the end effector 66A is
Is moved in the horizontal direction (y-direction) at a height above and inserted into the chamber 50. The end effector 66A holding the substrate 126 is stopped by disposing the substrate 126 at the center position above the platen, and is lowered by the z linear actuator. Eventually, end effector 66A reaches the second height shown in FIG. 7B. While traveling between the first height and the second height, the end effector passes under the shuttle fingers, for example, one tooth of the end effector 66A is positioned on both sides of the central fingers 86A and 86B and Adjacent side support fingers 88A, 8
Pass just inside 8B. When the top surface of the end effector 66A reaches the height of the pad 94 at the tip of the finger, the pad 94 engages the underside of the substrate 126 and the shuttle 70 obtains the substrate 126 from the end effector 66A. When the end effector 66A reaches the position shown in FIG. 7B, it moves horizontally and is withdrawn from the load lock chamber 50. When end effector 66A is withdrawn, valve 60 may be closed and chamber 50 may be pumped down.

The platen 120 may then be raised from the initial height of FIG. 7A to the raised height of FIG. 7C. While moving between the initial height and the raised height, the platen 120 passes near the shuttle fingers housed by associated ones of the channels 124 (see FIGS. 7D and 7E). When the upper surface of the platen 120 contacts the underside of the substrate 126, the substrate 126 is lifted from the fingers (more specifically, the pads 94) and the substrate 126 is obtained from the shuttle 70. Then
The shuttle may be maintained in a load lock chamber or moved to a processing chamber. As shown in FIG. 7C, with the substrate 126 held by the platen 120, the substrate 126 may be heated or prepared to prepare for processing.

A cassette (not shown) including a large number of substrates is loaded in the load lock chamber 5.
0 or 52 may be provided. The load lock chamber may be used as a buffer for storing substrates before or after processing by repeating the above procedure for each substrate of a cassette composed of many substrates. Further details of a multi-substrate cassette can be found in “In-Situ Substrate Transfer”, filed on the same date as this application and incorporated herein by reference.
Shuttle) in the aforementioned U.S. Patent Application [Attorney Docket No. 2703 (266001)].

When the substrate 126 is heated, the platen 120 is lowered and returned to the position of FIG. 7B, and the shuttle 70 again obtains the substrate 126 from the platen 120 in this process.

When the substrate 126 is supported on the shuttle 70 in the load lock chamber 50 after optional heating of the substrate 126 and pump down of the load lock chamber 50 and the first processing chamber 54A, the valve 56A It may be opened to communicate between the chamber 50 and the processing chamber 54A. When the shuttle moves to such an initial position, the pinion gear of the drive mechanism 100 of the load lock 50
Engage with the rack of shuttle 70 adjacent the downstream end of the shuttle rails.
To move the substrate to the processing chamber, power is supplied to the motor of drive mechanism 100 to move the shuttle downstream to the first processing chamber via valve 56A. When the shuttle reaches the target position in the first processing chamber 54A, its movement stops, and the shuttle and the substrate remain at the target position.

As shown in FIGS. 8A to 8B, each processing chamber provides a substrate 12 during processing.
6 includes a susceptor 130 for supporting the same. The planar area of the susceptor 130 is slightly larger than the substrate 126 and the susceptor 130
6 has an upper surface 132 having a structure that contacts substantially the entire lower side. The upper surface 132 of the susceptor 130 is a continuous surface except that it is interrupted by providing a passage for lift pins 134 extending through the susceptor 130 from below. As shown, susceptor 130 has a central pedestal 136 that is raised and lowered to raise and lower susceptor 130. Lift pins 134 are fixed to pin plate 138 at their lower ends. The pins and pin plate are generally raised and lowered by an outer shaft 139 surrounding a central pedestal 136. In one embodiment, the lift pins 134 and the pin plate 138
Move independently from. The lift pins 134 support the substrate when in the extended position. When the lift pins are retracted, the substrate is lowered to the susceptor 130.
When the susceptor 130 is raised, the lift pins move to the surface 13 of the susceptor 130.
2 is retracted to a position below. The pin may pass below surface 132 by a counterbore located in surface 132.

According to this embodiment, when the susceptor 130 moves up, the support of the substrate can be easily transferred from the lift pins 134 to the susceptor 130. Further details of this pin system are assigned to the assignee of the present invention and are incorporated herein by reference and filed on Oct. 14, 1997, entitled "Vacuum Processing System with Improved Substrate Heating and Cooling (A Va
cum Processing System Having Improv
ed Substrate Heating and Cooling) in US patent application Ser. No. 08 / 950,277.

In the described embodiment, each chamber includes six lift pins 134 arranged in pairs extending from upstream to downstream of the chamber. Like the support fingers, and for the same reason, the lift pins 134 are also preferably located at about 15 to 30% of the dimensions of the substrate 126, and more preferably about 22% of the width of the substrate 126. preferable. More preferably, the lift pins are located just inside the distal end of the pad 94 location. More preferably, both pins and pads 94 are located at 22% of the locations, but such an arrangement prevents the pins and pads from passing through each other. Therefore, the pins and the pads are provided closer to each other, but the pins are preferably provided closer to the center line of the substrate than the pads. In this way,
Relative movement can be performed without contact.

The lift pins 134 may have a generally “T” shaped cross section. As described above, the corresponding counterbore is located on the susceptor 130 around the hole of the lift pin, so that when fully retracted, the lift pin
Below 32 levels. At that time, in the retracted position, the substrate does not contact the lift pins. Thus, the lift pins have minimal thermal characteristics. In other words, the lift pins 134 and their passage through the susceptor 130
In addition, it does not significantly affect the uniform temperature distribution of the entire substrate 126. Thus, high process requirements for temperature uniformity, such as, for example, TFT formation, are advantageously achieved.

When the shuttle 70 supporting the substrate 126 enters the processing chamber 54 A, the substrate 12
6 and the shuttle fingers 86A, 86B, 88A, 88B pass above the susceptor 130 at the first height, as shown in FIG. 8A. Lift pin 134 may be in an extended position relative to susceptor 130 or in a retracted position (shown in FIGS. 8A and 8B). The substrate 126 and the shuttle 70
When stopped at the target position just above the susceptor 130, the susceptor 130 and / or the lift pins 134 are raised. Lift pin plate 138, lift pin 13
4 and / or as the susceptor 130 is raised, the pins (stationary in the extended position) contact the underside of the substrate 126 (FIG. 8A), disengaging with the shuttle 70 and
6 is raised (FIG. 8B). With the substrate 126 provided at such an intermediate position,
Shuttle 70 is withdrawn from processing chamber 54A and fingers 86A, 86B
, 88A, 88B pass around the lift pins 134 and between the substrate 126 and the susceptor 130, and at least one of the cross members 80A, 80B of the shuttle 70
Pass above 6. The shuttle 70 may be pulled into the load lock chamber 50 or transported to or beyond the second processing chamber 54B and work for other substrates, for example, by transporting to another chamber or the like. You may. However, as shuttle 70 exits chamber 54A, chamber 54A may be sealed by closing valve 56A (and valves 58A and 56B if open). Next, the lift pins 134 are lowered with respect to the susceptor 130 to dispose the substrate above the susceptor 130.

At this point, the process may begin. When the processing is completed and any processing gas is exhausted (if necessary), the valve 56A may be opened to connect the load lock chamber 50 to the processing chamber 54A. Also, needless to say, valves 58A and 56B are open when the shuttle is carried downstream. Next, the lift pins 134 and the pin plate 138 are raised to raise the substrate above the susceptor 130, so that the substrate is supported on the lift pins. In the same manner as when the substrate 126 is delivered to the processing chamber 54A, the shuttle 70 is moved to the processing chamber 5A.
It is returned to 4A. When the shuttle approaches the target position, the fingers 86A, 86B, 8
8A and 88B pass between the substrate 126 and the susceptor 130 while passing around the lift pins 134. The cross member 80A passes over the substrate 126. When shuttle 70 reaches the target position, susceptor 130 and / or pin 134 may be lowered to the position of FIG. 8A while fingers 86A, 86B, 88A, 88B acquire substrate 126 from pin 134.

At this point, the substrate 126 may be delivered to the second processing chamber 54B through the valves 58A and 56B. Such a transfer step is performed by the load lock chamber 5.
It may be similar to the steps performed when transferring from 0 to the first processing chamber 54A. In a similar process, the substrate 126 may be transferred to the third processing chamber 54C. This may be done on either of the shuttles 70 and 72. Finally,
In transferring the substrate from the load lock chamber 50 to the first processing chamber 54A, the substrate is pulled out of the third processing chamber 54C in a reverse step similar to the step performed by the shuttle 70, and May be transported.

Similarly, the substrate 126 is extracted from the cooling load lock chamber 52 by the robot end effector 68B in a step substantially opposite to the step used in the robot end effector 66A when introducing the substrate 126 into the heating load lock chamber 50. Good.

The use of the lift pins 134 provides another advantage. In any chamber, lift pins 134 may be used to raise substrate 126 above heated or cooled susceptor 130 or platen 120. Such elevated conditions may be maintained as needed to raise the temperature of the substrate to a desired level.
For example, the substrate 126 is cooled, but if the temperature of the susceptor 130 is high,
Maintaining 34 at an elevated position is beneficial for cooling substrate 126.

The drive mechanism 100 may be synchronized to smoothly transport or transfer the shuttle from one drive mechanism to another. In the described embodiment, referring again to FIG. 1, a drive mechanism 100 is provided between each processing chamber and between the load lock and the adjacent processing chamber. More specifically, as described above, drive mechanisms 100 and 100 '''are not separated from their adjacent load lock chambers 50 and 52 by a valve, respectively, so that they are within the load lock chambers. it is conceivable that.
The rails 74A and 74B of the shuttle 70 are long enough to make up for voids in the drive mechanism 100 of the adjacent chamber. Therefore, only the drive mechanism 100 of the load lock chamber 50 needs to be used to move the shuttle from the heated load lock chamber 50 to the first processing chamber 54A. However, to further move the shuttle to the second processing chamber 54B, the drive mechanism 100 of the load lock chamber 50 needs to
The shuttle must be switched or handed over to a drive by the drive mechanism between the second chamber 54A and the second chamber 54B (ie, drive mechanism 100 'and pinion gear 106'). In such an exemplary situation, the shuttle is transported from the heated load lock chamber 50 to the second processing chamber 54B without stopping directly.

Control of the drive mechanism to effect these and other movements is shown in FIGS. 9A to 9F. Initially, as shown in FIG. 9A, the shuttle 70
3 is in the operating position of the load lock chamber 50 with the pinion gear 106 engaged with the pinion gear 106 of the drive mechanism 100. Similarly, shuttle 72 is in the operating position of load lock chamber 52. The pinion gear 106 of the drive mechanism 100
The shuttle 70 is moved into the first processing chamber 54A and further moved to a target position (FIG. 9B) of the first processing chamber 54A (in the target position, the shuttle 70 is moved).
And the susceptor 130 of the chamber can exchange the substrate). Similarly, the pinion gear 106 '''of the drive mechanism 100''' moves the shuttle 72 to the third processing chamber 54C and further moves the shuttle 72 to a target position (FIG. 9B).
).

At the time of the transfer, if the shuttle 70 intends to exchange the substrate with the susceptor in the processing chamber 54A as shown in FIG. 9B, the movement stops at this position, and Is exchanged. However, in this example, the shuttle 70 is described as exchanging substrates with the susceptor of the processing chamber 54B, so the movement continues.

Further, as shown in the state at this time of the movement, the shuttles 70 and 7
2 moved in both directions. Shuttle 70 moved downstream while shuttle 7
2 moved upstream. The shuttle 70 moving to the processing chamber 54B advances until its rack 77 engages the pinion gear 106 'of the drive mechanism 100'.
The shuttle 72, which moves only to the processing chamber 54C, moves forward, but stops before the rack 77 contacts the pinion gear 106 '' or 100 ''. In fact, in this example, the shuttle 72 is connected to the pinion gear 106 'of the drive mechanism 100 "".
Only when driven by '' is shown.

In the case of shuttle 72, which collects processed substrates from chamber 54C, this represents the end of this transfer phase (FIG. 9C). In the case of the shuttle 70, control may be transferred from the drive mechanism 100 to the drive mechanism 100 'in various ways.
For example, when the shuttle 70 engages the drive mechanism 100 ', the drive force provided by the previous drive mechanism 100 causes the rack 77 to drive the drive mechanism 100'.
The 'pinion gear 106' is rotated. Upon rotation in this manner, the encoder 110 of the drive mechanism 100 'provides an input to the control system 111 (see also FIG. 6A). Although only one encoder 110 and control system 111 are shown, it should be understood that each drive mechanism 100 has an encoder, and each encoder is coupled to control system 111.

In a preferred embodiment, the first rotation of the pinion gear 106 causes the pinion gear 10
6 ′ may also provide a signal to control system 111 to rotate simultaneously with pinion gear 106. In this way, each starts rotating simultaneously. In yet another alternative embodiment, the rotation of the pinion gear 106 ′ may rotate after the pinion gear 106 has rotated, but will begin before the pinion gear 106 ′ is moved by contact with the pinion gear 106 ′ and the force of the shuttle 70. . Such rotation of pinion gear 106 'is provided by a signal from control system 111, which signal may be delayed in a predetermined manner, but is triggered by rotation of pinion gear 106.

In any of these embodiments, if each pinion gear is “clocked” with each other, as described below, each pinion gear can be maintained at a fixed angle to each other. For example, if one pinion gear has teeth at 12 o'clock at a given time, the control system will rotate these pinion gears so that adjacent pinion gears have teeth at 12 o'clock at a given time. Can be done. In addition, the control system can rotate each pinion gear at the same speed, so that substrates at different speeds can be transported on different shuttles. In other words, the control system 111 rotates all pinion gears at the appropriate speed and angular position, so that when the shuttle engages a given pinion gear, that engagement can be made firmly.

Referring to FIG. 9C, shuttle 70 is shown in a target position in processing chamber 54B. At this position, shuttle 70 may exchange substrates with the susceptor in chamber 54B. As can be seen, the shuttle 70 has the pinion gear 10
6 'and under the control of the drive mechanism 100'. At this target position, shuttle 7
0 is in chamber 54B, while shuttle 72 is in adjacent chamber 54C. In this case, these shuttles stop moving before contacting pinion gear 106 ''. In this way, without these rails colliding just above the pinion gear 106 '' and on its center line, the shuttle 70 can
B and shuttle 72 serves chamber 54C. Shuttle 70 has valve 5
Extending partially through 8B, shuttle 72 may extend partially through valve 56C, but does not extend into contact with each other or pinion gear 106 ''.

Referring to FIG. 9D, the control system 111 may cause adjacent shuttles in adjacent chambers to be simultaneously moved to the right or left (moving to the right is shown).
In this case, shuttles 70 and 72 move simultaneously in the same direction.

Referring to FIG. 9E, which shows the result of the rightward movement of FIG. 9D, shuttle 70 is shown serving chamber 54C. Shuttle 72 is shown returning to chamber 52.

Referring to FIG. 9F, shuttle 70 is shown moving to the left to return to another chamber. In this figure, shuttle 70 is shown passing through chamber 54B. When valve 58C is closed, shuttle 72 is in a position where substrate removal occurs in the manner described above.

Referring to the movement of the shuttle 70 between FIGS. 9B and 9C, the control system causes the shuttle 70 to move a distance beyond the initial point of engagement with the pinion gear 106 ′, thereby causing the drive mechanism 100 ′ to move. If the pinion gear 106 'meshes securely with the rack, in one embodiment, the control system 111 may power the motor of the drive mechanism 100' to reduce or eliminate power to the motor of the drive mechanism 100. . Therefore, the driving mechanism 100
', The movement of the shuttle 70 is continued. As mentioned above, in the preferred embodiment, the control system powers the pinion gear 106 'and the drive mechanism 100'.

By a similar process, the substrate may be moved to any chamber by almost any shuttle. Only the shuttle 70 serves the load lock 50 and the shuttle 72
Needless to say, only one is used for the load lock 52. These figures show proper control of valves 56A-56C and 58A-58C. The details of the other movements are substantially the same as those described above.

One way to ensure smoother transport is to pre-calibrate or “clock” the pinion gear 106. To pre-calibrate the pinion gear,
With the toothed rack of the shuttle engaging each pinion gear, the shuttle 70 may be positioned on two adjacent pinion gears. One or both of the pinion gears may be rotated slightly to allow each pinion gear to make best contact with the rack. "Clocking" adjacent pinion gears in this manner allows the control system to rotate the pinion gears in phase with one another. Further, this operation may be performed at the operating temperature of the system, taking into account thermal expansion. In a preferred embodiment,
As the rack advances from the first pinion gear to the second pinion gear, the second pinion gear is rotated at the same time as the first pinion gear rotates. By rotating at the same time, the second pinion gear always “
Maintained in a "clocked" orientation. Thus, when the rack reaches the second pinion gear, the second pinion gear is properly oriented to contact and engage with the rack at the correct timing.

The drive mechanism 100 may supply power in response to a control system command. When such commands are given, they may be determined based on information from various encoders and / or drive mechanisms of the system. Such information is used to determine the location of the various shuttles in the system, the current state of their movement, and what the drive mechanism needs to synchronize.

If two adjacent processing chambers, such as chambers 54A and 54B, are performing the same processing, the substrate may be loaded into the processing chamber, as described above. That is, the substrate is loaded in the chamber 54B, the processing of the chamber 54B is started, and the next substrate is loaded in the chamber 54A. In this way, the TACT time is generally minimized.

Hereinafter, the processing order will be partially described with reference to FIG. Reference characters are in Tables I and I
It is intended to describe the technical term of I. The loading load lock is indicated by LL, the process chamber by A to N, and the removal load lock by UL. The substrates 1 to k to be processed are also shown. Generally, the acronyms are used for processing chambers and the lowercase letters or numbers are used for substrates. The following notation is also used: Hj = heating of the substrate j Cj = cooling of the substrate j PjK = processing of the substrate j in the processing chamber K TK = processing time of the substrate in the processing chamber K TL = time required for loading the substrate TC = time required for cooling the substrate

[0090]

Table I One membrane system Each processing chamber performs the same process If TL and TC are much shorter than TK, in this system the substrates may be loaded and processed as follows. Step Execution 11 1 to LL 21 to N 2 to LL 32 2 to (N-1) 3 to LL P1N 4 3 to (N-2) 4 to LL P1N P2 (N-1)・ ・ ・ X. . . . 1 to UL Same as below.

In other words, the first processing chamber is initially loaded, so that when processing is completed on the substrate in the last processing chamber, it may be immediately dropped into the removal load lock. Other processes are an extension of this.

[0092]

TABLE II Two Membrane Systems Two Processing Chamber (A and B) Steps Execution 1 1 to LL 2 1 to A 2 to LL 3 P1A 4 1 to B 2 to A 5 P1B P2A 6 1 UL to 2 B to 7 P2B 82 to UL Other recipes may be developed depending on the desired process.

As mentioned above, all motors may be driven by one multi-access controller card, each following a controlled motion profile.
In this way, the speed acceleration is low during power-up to a constant speed, and the deceleration is low during power-down. In an exemplary embodiment where the shuttle moves from the load lock 50 to the chamber 54B, when the motor reaches a certain speed, the shuttle may be located at about half of the total travel distance. It is the drive mechanism 100 '(see FIGS. 9A-9F) associated with chamber 54B that receives the shuttle while at a constant speed and performs most of the deceleration. In general, the drive mechanism engages at any point: acceleration, deceleration, constant speed,
More generally, engagement and disengagement occur at low speeds.

When a substrate enters a selected chamber, such as chamber 54B, sensors are used to determine when the substrate and shuttle are located at a target location. This is especially important when the substrate is heated up and the shuttle component thermally expands. In such a case, a predetermined position such as a position determined when the shuttle and the substrate are cooled cannot be reproduced. Therefore, it is important to frequently sense the position of the substrate and the shuttle.

In particular, the processing chamber may undergo thermal expansion due to heating of the chamber. If processing is performed at different temperatures using a given chamber or chamber type, the amount of expansion will be different for different uses. For example, if the position of the substrate is controlled relative to the entrance to the chamber, the substrate may be configured to transport the substrate at a first temperature to align and transport the substrate to a target location in the chamber. When the chamber is at the second temperature, it may not be aligned with the target position.

Referring to FIG. 10, each chamber has a transverse mid-plane 304. Each transverse mid-plane 304 extends across the path of the shuttle through the associated chamber and is defined by the transverse mid-line of the substrate when such a substrate is positioned at a desired location for processing within the chamber. Target position. Each processing chamber includes a sensor 306 disposed generally within a transverse mid-plane 304 of such a chamber. The central position of the chamber is substantially invariant to temperature even if the position outside the chamber changes due to thermal expansion. Thus, the position of the sensor 306 is substantially invariant to temperature relative to the target position for placing the substrate in the chamber. In addition, since the sensors are provided symmetrically, the right and left shuttles can easily use the same set of sensors.

The sensor 306 is structured to interact with a trigger feature of the shuttle passing by the sensor 306 along the shuttle path. In the embodiment illustrated in FIG. 10A, sensor 306 may comprise a photoemitter 307A that directs a light beam in the direction of photodetector 307B. The light beam is split by the leading edge of shuttle rail 74A passing adjacent to sensor 306. As the light beam splits, the shuttle sends an input signal to the control system 111 indicating that it has reached an intermediate position in the processing chamber that is not at the target position. As shown in FIG.
The front edge of the rail is located a predetermined distance D forward from the substrate holding position on the shuttle 70 defined by the transverse centerline 309 of the substrate 126 held at the desired position on the shuttle 70. Upon receiving an input signal from the sensor, the control system moves the shuttle 70 further forward from the intermediate position, and moves the shuttle 70 forward the same distance D to a desired position for transferring a substrate to the chamber. When the shuttle 70 arrives, the movement of the shuttle 70 ends. Also, error correction may be used, as described below.

When the substrate transport shuttle 70 is located at a desired position, the substrate is disposed on the susceptor 130, as described above, including the arrangement on the lift pins. The substrate may then be processed as required.

A number of factors influence the design of the system, and more specifically, the selection of an appropriate distance D. All other factors that equalize and maximize the location accuracy are related to minimizing the distance D. However, in order to control the shuttle and the substrate to decelerate smoothly (such as during delivery), it is preferable that the distance D be longer.

Moving the shuttle a predetermined distance D involves rotating the drive gear or other drive element a predetermined amount. The consistency of the distance D is affected by the thermal expansion of components of the drive mechanism, such as the shuttle and drive gear. The effect of such expansion may be reduced in a variety of ways to a negligible extent (relative to the expansion of the chamber).

First, the shuttle and pinion gear may be formed of a material that has a significantly lower coefficient of thermal expansion (CTE) than other materials used in the construction of the processing chamber. For example, the use of INVAR 36 steel for the shuttle and pinion gear reduces such effects. The linear CTE of INVAR 36 steel is 0.54 × 10 ⁻⁶ / ° C., which is about 1/30 of conventional stainless steel and 1/40 of aluminum.

Second, as shown in FIG. 3, valves 56A through 56C and 58A through 5
The location of the 8C in the housing may separate it from the processing section of the processing chamber. Thus, the drive mechanism does not receive the same temperature extremes as the rest of the processing chamber.

Finally, in the described embodiment, during processing, the shuttle is outside the chamber performing such processing and does not experience temperature extremes of other system components.

[0104] Other sensing systems can be used. For example, referring to FIG.
Instead of the photodetector 307B described above, a laser 312 may be used to sense the leading edge of the cross member 80A of the shuttle 70.

The displacement of the substrate on the shuttle 70 may be detected using a laser. After shuttle 70 has moved a distance “x”, laser 312 may be used to sense leading edge 314 of substrate 126. If the laser is fixed, multiplying the time between the events to be sensed by the known shuttle speed results in the distance y. Alternatively, encoder 110 (see FIG. 6A) is used to locate the motor when the laser senses these events. The system stores in memory a known predetermined optimal distance between the substrate and the outer edge of the cross member. Therefore,
If x is equal to this optimal distance, the substrate is properly aligned on the shuttle. If not, appropriate steps may be taken to overdrive or underdrive the drive mechanism to ensure that the substrate is located at the correct target location in a given chamber.

In another embodiment, as shown in FIG. 14, the shuttle 70 is shown positioned on the center line 352 of the first processing chamber 54A. The system may be extended to load locks or other types of chambers. A magnet 356 is mounted on shuttle 70 at centerline 358. Here, the center line 358 coincides with the center line 352 of the chamber 54A, and the cross member 8
It is substantially equivalent to 0A and 80B. Two magnetic sensors 360A and 362A, which may be Hall effect sensors, are located outside the chamber and are symmetrically located about a centerline 352. Similar sensor sets are provided in other chambers. It may be preferred that an analog type sensor is used.

When shuttle 70 is positioned such that centerline 358 coincides with centerline 352, shuttle 70 is positioned in the center of chamber 54A and magnet 356 is centered between sensors 360A and 362A. . In this case, the analog voltage outputs of both sensors are at the same level.

The system may be used in an error correction method. After the shuttle moves,
The sensor voltage is checked to determine if it is the same voltage. If not the same
Feedback to control system 364 is used to control drive mechanism 100. The drive mechanism 100 'is then controlled to move the shuttle 70 until the two sensor voltages are the same, indicating that the shuttle has been correctly positioned. This system may be repeated for each drive mechanism and chamber. If necessary, feedback and control to the drive mechanism may be sought using the same control system computer. In this way, distributed feedback error correction may be performed on all modular systems.

The use of only one sensor has drawbacks. As shown in FIG. 15, the relative positions of the magnet 356 and a sensor such as the sensor 360A are shown in a graph corresponding to the analog output voltage (y-axis) of the sensor versus the position of the magnet (x-axis). Line 372
Represents a time when the magnet 356 is arranged at a position closest to the sensor 360A. Figure 1
As can be seen from FIG. 5, the signal output when the magnet is at the center of the sensor is a little flat and smooth, from which it is very difficult to identify a clear peak position. A further disadvantage is that as the strength of the magnetic field changes with temperature, the peak level also changes.

FIGS. 16 and 17 show the situation of two sensors, such as sensors 360A and 360B. The output of sensor 360A is shown as curve A,
The output of 60B is shown as curve B. At the line 374 where these curves intersect,
The voltages are equal, indicating that the magnet 356 is centered between the sensors. The intersection 374 is not affected by a change in the strength of the magnetic field of the magnet due to the temperature.
This is an advantage of a two sensor system.

A limit sensor (LS) may be used as shown in FIG. The limit sensor 308 may be located near a wall, gate valve, or other type of hard stop. These limit sensors sense the position of the end of the shuttle and reduce or eliminate power to the drive mechanism motor when activated. For example, the limit sensor 308 is located at a distance "A" from a hard stop position 310, for example, a wall of the chamber. At this point where the limit sensor 308 senses the shuttle 70, the position of the shuttle 70 is similarly at a distance A from the hard stop. In this system, when the shuttle 70 is at a distance A from the hard stop, the opposite end of the shuttle 70 is at a distance "B" from the centerline of the drive mechanism. Thus, as long as B is greater than A, shuttle 70 cannot accidentally roll off the drive mechanism or strike hard stop 310.

As shown in FIGS. 1 and 1A, an alcove or compartment 148 at the end wall of the inlet and outlet load locks is provided to provide shuttles 70 and 7.
The two side rails each house an associated end. When the shuttle is in the target position of the load lock chamber, such compartment receives and accommodates the end of the siderail. As described above, the length of the rail is generally
To 54C longer than the length. This allows the volume of the load lock to be correspondingly minimized.

For a variety of reasons, it may be advantageous to minimize the volume of the chamber. As the chamber volume is reduced, the capacity requirements of any vacuum pump can be reduced, making it easier to pump down the chamber faster and more economically. Further, since the consumption of the processing gas or the inert gas is reduced, it becomes easier to introduce these gases. Heating and cooling are also easier to perform. For example, providing a more uniform plasma without voids or cavities may increase process uniformity.

For the process of chambers 54A to 54C, each chamber has two valves 56A
To 56C and 58A to 58C provide the further advantage that each such valve can be located substantially adjacent to the susceptor 130 of the associated chamber. An even more significant advantage is that the drive mechanism 100 of each processing chamber may be located outside the cavity defined by the valve housing (see FIG. 3). This greatly reduces contamination of the chamber by the drive mechanism.

The system is preferably configured such that some components are serviced or replaced with minimal disruption of the system or minimal contamination of the system chamber. The drive motor 102 and encoder 110 may be serviced or replaced from outside the processing area without risk of contamination. If service or replacement of the drive shaft 104 or any associated components is required, such operations may be performed with the valves on both sides of the drive mechanism closed.
Thus, the interior of the adjacent chamber is not contaminated from such operations. Even if contaminated, it is limited to the space between the valves immediately around the drive mechanism, which is easier to clean than inside the adjacent chamber.

A number of embodiments of the invention have been described. Nevertheless, it will be understood that various modifications may be made without departing from the spirit and scope of the invention. For example, it may be advantageous to associate certain processes associated with the fabrication of a given device with different chamber arrangements and different orders of use. Thus, the chamber types used include those used in etching processes, physical vapor deposition, chemical vapor deposition, and the like. In another modification, three processing chambers have been described herein, but the system provides one processing chamber, two processing chambers, or four processing chambers.
More than one processing chamber may be used. Because the system of the present invention is augmented in a modular fashion, numerous modifications are possible to suit any particular process. For example, the shuttle of the present invention may be controlled to repeat processing steps on a particular substrate, if necessary. In this way, the shuttle may be controlled in both directions. Accordingly, other embodiments are within the claims.

[Brief description of the drawings]

FIG. 1 is a schematic plan view of a processing area of a system according to the present invention.

FIG. 1A is a schematic side view of a portion of a load lock using an alcove.

FIG. 2A is a plan view of a shuttle and a lift fork according to the present invention.

FIG. 2B is a plan view of a shuttle and a lift fork according to the present invention.

FIG. 2C is a plan view of a shuttle and a lift fork according to the present invention.

FIG. 2D is a schematic side view showing a heated and bent glass substrate supported on support fingers.

FIG. 3 is a schematic side view of a processing area of a system according to the present invention.

FIG. 4 is a perspective view of a substrate transport shuttle according to the present invention.

FIG. 5 is a partial cross-sectional side view of a processing chamber and a substrate transfer shuttle according to the present invention.

FIG. 6A is a cross-sectional view of a processing area and a shuttle according to one embodiment of the present invention.

FIG. 6B is a cross-sectional view of the processing area and shuttle according to an alternative embodiment of the present invention.

FIG. 7A is a partial schematic cross-sectional view of a load lock chamber according to the present invention, illustrating various stages of transferring a substrate from the shuttle to a platen in the load lock chamber.

7A and 7B are partial schematic cross-sectional views of a load lock chamber according to the present invention, illustrating various stages of transferring a substrate from the shuttle to a platen in the load lock chamber.

FIG. 7C is a partial schematic cross-sectional view of a load lock chamber according to the present invention, illustrating various stages of transferring a substrate from the shuttle to a platen in the load lock chamber.

FIG. 7D is a perspective view of an alternative embodiment of the substrate transport shuttle and platen when the support fingers of the shuttle pass through the platen of the load lock chamber.

FIG. 7E is a perspective view of an alternative embodiment of the substrate transport shuttle and platen when the support fingers of the shuttle pass through the platen of the load lock chamber.

FIG. 8A is a schematic cross-sectional view of a processing chamber according to the present invention, illustrating different stages of transferring a substrate between a shuttle and a susceptor.

8A and 8B are schematic cross-sectional views of a processing chamber according to the present invention, illustrating different stages of transferring a substrate between a shuttle and a susceptor.

FIG. 9A is a partial schematic side view of a two shuttle system according to the present invention.

FIG. 9B is a partial schematic side view of a two shuttle system according to the present invention.

FIG. 9C is a partial schematic side view of a two shuttle system according to the present invention.

FIG. 9D is a partial schematic side view of a two shuttle system according to the present invention.

FIG. 9E is a partial schematic side view of a two shuttle system according to the present invention.

FIG. 9F is a partial schematic side view of a two shuttle system according to the present invention.

FIG. 10 is a schematic plan view of a multi-chamber system using sensors to accurately position a shuttle according to the present invention.

FIG. 10A is a schematic side view of a photodetector and photoemitter sensor system used in the present invention.

FIG. 11 is a schematic side view of an arrangement of a limit sensor according to the present invention.

FIG. 12 is a schematic diagram of a laser positioning sensor system used in a chamber according to the present invention.

FIG. 13 is a schematic diagram of a processing system according to the present invention.

FIG. 14 is an embodiment of the positioning and in place verification method.

FIG. 15 is a graph of sensor voltage output versus magnet position for a single sensor location and position verification method.

FIG. 16 is a graph of sensor voltage output versus magnet position for performing positioning and in place verification using two sensors.

FIG. 17 is a diagram illustrating a design layout of two sensors of the embodiment of FIG. 16;

──────────────────────────────────────────────────の Continuation of the front page (72) Inventors Tiner, Robin, El. United States, California, Santa Cruz, Reims Court 144 (72) Inventor Kurita, Shinichi United States, California, San Jose, Rolling Side Drive 3532 F-term (reference) 5F031 CA04 FA02 FA07 FA12 GA60 JA02 JA22 JA36 LA07 LA14 PA02

Claims (59)

[Claims] A first chamber; a second chamber in communication with the first chamber; and a second chamber of the second chamber between the first position of the first chamber and the second position of the second chamber. A substrate transfer shuttle movable along a shuttle path for transferring a substrate between the first and second chambers; provided between the first and second chambers and along an associated portion of the shuttle path; A drive mechanism adapted to move the substrate transport shuttle by controlling the drive mechanism to supply power to the drive mechanism to drive the substrate transport shuttle from a first position to a second position. A substrate processing apparatus comprising: a configured control system. 2. The method according to claim 1, wherein the first chamber is a load lock, and the second chamber is a processing chamber. The device according to claim 1. 3. The apparatus of claim 1, wherein said drive mechanism further comprises a pinion gear and a motor. A first chamber; a second chamber communicating with the first chamber; a third chamber communicating with the second chamber; a first location of the first chamber; A substrate transfer shuttle moving along a shuttle path between a second position of the second chamber and a third position of the third chamber to transfer a substrate between the chambers; A drive mechanism for the first and second chambers configured to move a substrate transport shuttle along an associated portion; a control system for controlling each drive mechanism, wherein the control system comprises: the first Power to the drive mechanism of the second chamber in the direction from the first position to the third position, the substrate transfer shuttle begins to engage and is driven by the drive mechanism of the second chamber. A control system configured to drive the substrate transport shuttle via an intermediate position where driving is initiated and configured to receive an input indicating that the substrate transport shuttle has passed the intermediate position. A substrate processing apparatus, wherein the transport of the substrate transport shuttle is synchronized from a drive mechanism of the first chamber to a drive mechanism of the second chamber. 5. The apparatus of claim 4, wherein the control system is further configured to power the drive mechanism of the first chamber when powering the drive mechanism of the first chamber. . 6. The drive mechanism of the second chamber after powering the drive mechanism of the first chamber and before contact of the shuttle with the drive mechanism of the second chamber. The apparatus of claim 4, wherein the apparatus is configured to power a power supply. 7. The apparatus of claim 4, wherein the control system is further configured to, upon receiving the input, power a drive mechanism of the second chamber. 8. The apparatus of claim 5, wherein the control system is further configured to, upon receiving the input, reduce power to a drive mechanism of the first chamber. 9. The apparatus of claim 4, wherein the control system includes an encoder coupled to the motor and determines the amount of movement caused by the motor. 10. The apparatus of claim 4, wherein each drive mechanism further comprises a pinion gear, wherein the substrate transport shuttle further comprises a toothed rack, wherein the pinion gear and the toothed rack are engagable. A first chamber; a second chamber in communication with the first chamber; a third chamber in communication with the second chamber; a first location of the first chamber; A first substrate transfer shuttle moving along a shuttle path between the second chamber and a second position to transfer a substrate between the first chamber and the second chamber; Moving along a shuttle path between a third position of the third chamber and a second position of the second chamber to transfer a substrate between the third chamber and the second chamber. A substrate transport shuttle; a drive mechanism provided in each of the first, second, and third chambers and configured to move the substrate transport shuttle along an associated portion of the shuttle path; and controlling each drive mechanism. Control system A substrate processing apparatus comprising: a stem; 12. The control system of claim 1, wherein the control system is configured and arranged to control the movement of the first and second substrate transport shuttles independently of each other.
An apparatus according to claim 1. 13. The apparatus of claim 11, wherein said first and third chambers are load locks and said second chamber is a processing chamber. 14. The apparatus of claim 11, wherein the control system is configured and arranged to perform the movements of the first and second substrate transport shuttles simultaneously. 15. The apparatus of claim 11, wherein the control system is configured and arranged to coordinate movement of the first and second substrate transport shuttles. 16. A second chamber in communication with the first chamber, the second chamber configured to perform a process on a substrate at a target location in the second chamber. An element disposed at a predetermined position and capable of being sensed by a sensor, and mounted on the upper part;
A substrate transfer shuttle for holding a substrate movable along a shuttle path between the first chamber and the second chamber; arranged along the shuttle path to detect when the element is at a predetermined distance from a target position. A sensor assembly in a second chamber configured to control movement of the substrate transport shuttle along a shuttle path and receive input from the sensor assembly indicating a position of the substrate transport shuttle. A control system, wherein the control system is provided with feedback by an output of the sensor assembly to correct a positioning error of the substrate transport shuttle. 17. The apparatus of claim 16, wherein said predetermined position is at a leading edge of said substrate transport shuttle. 18. The method of claim 18, further comprising an optical sensor of the second chamber disposed along a shuttle path and configured to detect a leading edge of the substrate, wherein the control system comprises: a feedback from the optical sensor; The substrate transport shuttle is configured and arranged to control movement of the substrate transport shuttle and correct positioning errors of the substrate transport shuttle using input from the sensor assembly.
An apparatus according to claim 7. 19. The apparatus according to claim 18, wherein said light sensor is a photodetector. 20. The apparatus of claim 18, further comprising a laser for providing incident light such that a leading edge of the substrate is detected. 21. The apparatus of claim 16, wherein said sensor assembly includes two sensors, said elements being equidistant from each sensor. 22. The element is a magnet, and the sensor is a magnetic sensor.
An apparatus according to claim 21. 23. The magnetic sensor according to claim 21, wherein the magnetic sensor is a Hall effect sensor.
The described device. 24. An apparatus for processing a substrate having a leading edge in a direction of movement, the apparatus comprising: a first chamber; and a second chamber in communication with the first chamber, wherein the second chamber is in communication with the first chamber. A second chamber configured to perform a process on the substrate at a target location in the second chamber and including a lift mechanism for supporting the substrate at the target location; and holding the substrate at a substrate holding location defined at the top. A substrate transport shuttle having a front edge spaced a given distance from the substrate holding position and movable along a shuttle path between the first chamber and the second chamber, wherein A substrate transport shuttle configured and arranged to exchange substrates between the substrate transport shuttle and a lift mechanism at one time; disposed along a shuttle path; A sensor configured to detect when a leading edge of the substrate reaches an intermediate position away from the target position by the predetermined distance; and controlling movement of the substrate transport shuttle along a shuttle path, the forward edge of the substrate transport shuttle. Or configured to receive an input from a sensor indicating that the leading edge of the substrate has reached the intermediate position, terminating the movement of the substrate transport shuttle when the substrate transport shuttle moves a predetermined distance beyond the intermediate position. A substrate processing apparatus comprising: a control system; 25. The apparatus according to claim 24, wherein said sensor is a magnetic field sensor. 26. The system further comprising at least one limit sensor disposed in at least one of the first and second chambers near the shuttle path, and providing a signal to the control system to transfer the substrate. 3. The movement of the substrate transport shuttle is terminated when the shuttle reaches a certain limit position.
An apparatus according to claim 4. 27. The apparatus of claim 26, wherein said predetermined position is a predetermined distance from a hard stop position. 28. The apparatus according to claim 24, wherein said sensor is a light sensor. 29. The apparatus according to claim 28, wherein said optical sensor is a laser. 30. The apparatus of claim 28, wherein said light sensor comprises a photodetector and a photosensor. 31. The substrate transport shuttle has a toothed rack on a lower side thereof,
Supported by a plurality of guide rollers disposed along the perimeter of the first and second chambers, each drive mechanism has a motor and a pinion gear, and allows the pinion gear to be mechanically coupled to the toothed rack. 31. The apparatus according to claim 30, wherein the substrate transport shuttle is moved. 32. A plurality of chambers; two substrate transfer shuttles movable along a shuttle path between the plurality of chambers and transferring substrates between each of the plurality of chambers; A drive mechanism for at least some of the plurality of chambers configured to move the substrate transport shuttle along a portion to be moved; and a control system for controlling each drive mechanism to coordinate movement of the substrate transport shuttle. A substrate processing apparatus comprising: 33. The apparatus of claim 32, wherein said control system is further configured to move each substrate transport shuttle simultaneously. 34. A method for placing a substrate on a substrate holding element at a target location in a processing chamber, the method comprising: loading and unloading the processing chamber along a path extending to the target location. Movably providing a substrate holding element; providing a sensor at a sensor location adjacent to a path selected to be substantially temperature invariant with a target location; Providing a trigger on the substrate holding element; inputting from the sensor when a trigger is sensed by the sensor when the sensor position is reached as the substrate holding element moves. Receiving a signal; upon receiving the input signal, the substrate holding element moves a predetermined distance beyond a sensor position, and then the substrate Ending the movement of the holding element. 35. A method of disposing a substrate holding element at a target location on a substrate in a processing chamber, the method comprising: moving the substrate holding element along a path into a processing chamber; At a sensor position where measurement is not adversely affected by the temperature of the substrate, using a sensor arranged along a path, an element at a predetermined position on the substrate holding element is moved relative to a target position of the substrate. Detecting when a predetermined relationship is established; and stopping the movement of the substrate holding element when the detection is made. 36. The method of claim 35, wherein said predetermined relationship is a minimum distance. 37. A method of disposing a substrate holding element at a target location on a substrate in a processing chamber, the method comprising: moving the substrate holding element along a path into a processing chamber; Detecting when a predetermined portion on the substrate holding element is at a predetermined distance from a target position of the substrate using a sensor disposed along the path at a position where the measurement is not adversely affected by the temperature of the substrate. Controlling the movement of the substrate holding element when the detection is performed such that the substrate is controllably moved to a target position on the substrate. 38. The method of claim 37, wherein said predetermined distance is a minimum distance. 39. A method for positioning a substrate holding element at a target location on a substrate in a processing chamber, the method comprising: a predetermined distance along a path extending through an intermediate location located a predetermined distance from the target location. Moving the substrate holding element having a leading edge portion separated from the substrate holding position on the substrate holding element at a distance equal to the processing chamber to a processing chamber; wherein the temperature in the processing chamber is in a position where the measurement is not adversely affected. Detecting, at a sensor position, when the leading edge portion reaches an intermediate position using a sensor arranged along a path; and after the substrate holding element moves a predetermined distance beyond the intermediate position, Stopping the movement of the holding element. 40. The method of claim 39, wherein said movement of said predetermined distance is determined by an encoder. 41. The method of claim 39, wherein said stopping is accomplished by reducing power to a drive mechanism that drives said substrate holding element. 42. moving a second substrate holding element having a leading edge along an element path; and detecting when the leading edge of the second substrate holding element reaches an intermediate position. And after the second substrate holding element has moved a predetermined distance beyond the intermediate position,
40. The method of claim 39, further comprising: stopping the movement of the substrate holding element. 43. The method of claim 39, wherein said first and second substrate holding elements are movable in opposite directions. 44. The method of claim 39, wherein the sensor location is near a center plane of the processing chamber perpendicular to the path. 45. The method according to claim 39, wherein said sensor is a photodetector. 46. The method of claim 39, wherein said sensor is a laser. 47. The method of claim 39, wherein said sensor is a magnetic sensor and said leading edge portion further comprises a magnetic element mounted thereon. 48. A substrate transfer shuttle is moved along a shuttle path between a first position of the first chamber and a second position of the second chamber to move the substrate transfer shuttle between the first chamber and the second chamber. Transferring a substrate to and from a chamber; controlling a drive mechanism of the chamber to move the substrate transfer shuttle along an associated portion of a shuttle path, wherein the controlling step comprises: Powering a drive mechanism to drive the substrate transport shuttle in a direction from a location to a second location; and receiving an input indicating that the substrate transport shuttle has reached a second location; A method of processing a substrate, comprising: controlling, including: reducing or eliminating power to a drive mechanism. 49. A method for controlling movement of a substrate holding element in a processing chamber, the method comprising: moving a substrate holding element having a leading edge portion along a path in the processing chamber extending through a predetermined location. Causing the substrate holding element to stop moving when the leading edge reaches a predetermined position, using a sensor; and detecting when the leading edge reaches a predetermined position. And a method comprising: 50. A method for controlling movement of a substrate holding element in a processing chamber, the method comprising: a path along a path in the processing chamber extending through a predetermined position at a predetermined distance from a drive mechanism. Moving the substrate holding element having an edge portion; detecting when the leading edge portion reaches a predetermined position using a sensor; and detecting when the leading edge portion reaches a predetermined position. Stopping the movement of the substrate holding element, the stopping step maintaining a mechanical connection between the substrate holding element and the drive mechanism. 51. A first position in the first chamber and a second position in the second chamber.
Moving a substrate transport shuttle along a shuttle path between the first chamber and the third chamber through the shuttle path to a third location in a third chamber. Controlling the respective drive mechanisms of the first, second and third chambers to move the substrate transport shuttle along an associated portion of a shuttle path, wherein the controlling comprises: Power is supplied to the drive mechanism of the first chamber, and from the first position to the third position, the substrate transfer shuttle starts engaging and the drive by the drive mechanism of the second chamber is started. Driving the substrate transport shuttle via the initiated intermediate position; receiving an input indicating that the substrate transport shuttle has passed the intermediate position; Supplying power to the drive mechanism of the chamber to drive the substrate transport shuttle in a direction from an intermediate position to a third position. 52. The method of claim 51, wherein said controlling step further comprises powering a drive mechanism of a second chamber upon powering a drive mechanism of a first chamber. 53. The method of claim 53, wherein the controlling step includes: after powering the drive mechanism of the first chamber, and before contacting the shuttle with the drive mechanism of the second chamber, the drive mechanism of the second chamber. 52. The method of claim 51, further comprising providing power. 54. The method according to claim 54, wherein after the power is supplied to the drive mechanism of the first chamber, when the shuttle contacts the drive mechanism of the second chamber, the control step applies power to the drive mechanism of the second chamber. 46. The method of claim 45, further comprising providing. 55. A first path along a shuttle path between a first location of the first chamber and one of a second location of the second chamber or a third location of the third chamber. Moving the substrate transfer shuttle to transfer a substrate between the first, second, and third chambers; a fourth position of the fourth chamber, and a second position or second position of the second chamber. Moving the second substrate transport shuttle along a shuttle path between the third chamber and one of the third locations to transport the substrate between the second, third and fourth chambers; Controlling the respective drive mechanisms of the first, second and third chambers to move the substrate transport shuttle along an associated portion of the shuttle path;
A substrate processing method including: 56. The method of claim 55, wherein said first and second substrate transport shuttles are independently controlled. 57. The method of claim 55, wherein said first and second substrate transport shuttles are adjusted and adjusted. 58. The method of claim 55, wherein said first and second substrate transport shuttles move simultaneously. 59. A first substrate transport shuttle is moved along a shuttle path between a first position of the first chamber and a second position of the second chamber to move the first and second shuttles. Transporting the substrate between the two chambers; moving the second substrate transport shuttle along a shuttle path between the third location of the third chamber and the second location of the second chamber. Transferring a substrate between the second and third chambers; and controlling a drive mechanism of each of the first and second chambers to move the substrate transfer shuttle along an associated portion of the shuttle path. Causing the substrate to be processed.