JP2002100658A - Semiconductor device inspection apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device inspection apparatus that can measure an electric resistance of each probe needle. SOLUTION: The probe needle electric resistance measurement apparatus 30 set up in this semiconductor device inspection apparatus comprises an aluminum disk 32, which brings all the probe needles 14 of a probe card board 16 into contact, a card checker 34, an elevator (unillustrated) for bringing up/down the card checker 34, and a power supply/measurement circuit 36. The card checker holds the aluminum disk in the center and has upright contact pins 38 so as to have electrical contact individually with base terminals of probe needles 14 arranged on the probe card-board around the holding region of the aluminum disk. The contact pins 38 are set up corresponding to each of probe needles 14, and each contact pin is independently connected with a power supply/ measurement circuit 36 by a connection cable 40. Hereby, each of probe needles 14 is independently connected with a power supply/measurement circuit 36.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for inspecting a semiconductor device, and more particularly, to an apparatus for accurately inspecting the electric resistance of each probe needle provided in the apparatus for inspecting a semiconductor device, particularly the electric resistance at the tip of the probe needle. The present invention relates to a semiconductor device inspection device having a probe needle electric resistance measurement device capable of measurement and having a configuration capable of accurately measuring electrical characteristics of the semiconductor device.

[0002]

2. Description of the Related Art In an IC (semiconductor integrated circuit) manufacturing process, various inspection operations are required to inspect whether a semiconductor integrated circuit is formed as designed. For example, before dicing, a wafer inspection process for inspecting whether or not a desired semiconductor integrated circuit is formed in each chip region of the wafer is performed. In the wafer inspection process, a semiconductor integrated circuit formed in each chip area on a wafer is inspected using an inspection device of a semiconductor device.

[0003] The configuration and use of a conventional semiconductor device inspection apparatus will be described with reference to FIGS. 3 to 5.
FIG. 3 is a schematic diagram showing a configuration of a semiconductor device inspection apparatus, and FIG.
FIG. 5 is an enlarged view of an IC chip area formed on a wafer to show correspondence between probe needles of a probe card substrate and electrodes of an IC chip, and FIG. 5 is a schematic view showing a configuration of a prober device. FIG. 3 shows a conventional semiconductor device inspection apparatus 10.
As shown in FIG. 1, a wafer stage 1 for holding a wafer W
2, a probe card substrate 16 having a probe needle 14 and contacting the probe needle 14 with an electrode of an IC chip formed on the wafer W on the wafer stage 12, and an electrical connection with each probe needle 14 of the probe card substrate 16. And an LSI tester 20 electrically connected to the test head 18 via a connection cable 19 and having various measuring devices.

[0006] The wafer stage 12 and the probe card substrate 16 constitute a prober device 22 and are housed in a housing 24. As shown in FIG. 4, the tips of the probe needles 14 provided on the probe card substrate 16 contact the electrodes (pads) of each IC chip formed in the chip area of the wafer, and are formed on the IC chip. Make an electrical connection to the circuit. Furthermore, the prober device 2
2 is a wafer for mounting a wafer, as shown in FIG.
A moving arm 28 for moving the stage 12 in the X-Y direction and positioning it at a predetermined position. As described above, the conventional prober device 22 includes, as shown in FIG.
The wafer W is placed on the wafer stage 12 to be transported and positioned, and the probe needles 14 and the chip electrodes are brought into contact with each other to prepare for measurement of electrical characteristics.

When the probe needle 14 comes into contact with the aluminum tip electrode, heat is generated due to contact resistance, and the aluminum of the tip electrode is converted to aluminum oxide. While the probe needle 14 and the tip electrode are in contact with each other, aluminum oxide generated by oxidizing aluminum of the tip electrode adheres to the tip of the probe needle 14. As a result, as shown in FIG. 6, the electric resistance increases while fluctuating, and it becomes impossible to accurately measure the electric characteristics of the IC chip. In FIG. 6, the number of contacts (-) of the probe needle is plotted on the horizontal axis, and the electrical resistance value (Ω) is plotted on the vertical axis, using the current value flowing through the probe needle as a parameter.

Therefore, conventionally, the procedure has been to automatically clean the tip of the probe needle (needle tip) after measuring the electrical characteristics of IC chips on a predetermined number of wafers. In the conventional cleaning method, a cleaning sheet to which a sheet-like thin rubber is attached is mounted on a silicon wafer, and a probe needle is brought into contact with the cleaning sheet to physically or mechanically remove aluminum oxide.

[0007]

However, when the adhering matter adhering to the tip of the probe needle is removed by the above-described cleaning method, a check such as to increase the electric resistance of the probe needle has not been conventionally performed. . Therefore, it is unclear whether the deposit on the probe needle has been reliably removed and the electric resistance value of the probe needle has decreased. In an inspection device that aims to test, inspect, and evaluate the electrical characteristics of a semiconductor device, measuring and evaluating the electrical characteristics of a semiconductor device without checking the electrical resistance of the probe needle This is not a good thing in terms of reliability. In other words, there is a risk that a defective product is determined to be a non-defective product, or a non-defective product is determined to be a defective product by mistake.

In the measurement of the electrical characteristics of a semiconductor device, if the measurement results are continuously abnormal, whether the cause is the LSI tester, the wafer's identity, the probe card substrate, etc. I cannot judge immediately. And, because of the investigation, the work efficiency of the inspection deteriorates, and even if it is found that the problem is caused by the probe card board, which probe needle is bad, that is, the probe needle is in poor contact, or the high resistance Is there an abnormality due to the adhered substance of the probe stuck to the probe needle?
It takes a considerable amount of time to investigate.

It is an object of the present invention to provide a semiconductor device inspection apparatus capable of measuring the electric resistance value of each probe needle.

[0010]

In order to achieve the above object, a semiconductor device inspection apparatus according to the present invention comprises a wafer stage for holding a wafer and probe needles, and is formed on the wafer on the wafer stage. A probe card substrate for bringing the probe needle into contact with the electrode of the IC chip, and a measuring device electrically connected to the probe needle of the probe card substrate; A conductive plate for contacting the needles, a card checker holding up the conductive plate and having a contact pin upright with a contact pin for electrically contacting the base end of each probe needle provided on the probe card substrate, and raising and lowering the card checker The lifting pin and the contact pin of the card checker are in contact with the base end of the probe needle, and the tip of the probe needle is in contact with the conductive plate. Then, a voltage is sequentially applied between the conductive plate and each contact pin of the card checker, a current flows through the path of the contact pin, the probe needle and the conductive plate, and the electric resistance of each probe needle is measured independently. A probe needle electric resistance measuring device having a measuring mechanism is provided.

According to the present invention, the contact pin of the card checker is brought into contact with the base end of the probe needle, and the tip of the probe needle is brought into contact with the conductive plate, and a voltage is applied between the conductive plate and each contact pin of the card checker. By sequentially applying the current and flowing a current through the path of the contact pin, the probe needle, and the conductive plate, the electrical resistance of each probe needle can be accurately measured.

In a preferred embodiment of the present invention, the conductive plate is an aluminum plate. By bringing each probe needle into contact with the aluminum plate, the contact resistance between the aluminum tip electrode and the probe needle can be measured more precisely.

[0013]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. Embodiment Example This embodiment is an example of an embodiment of a semiconductor device inspection apparatus according to the present invention. FIG. 1 is a schematic diagram showing a configuration of a probe needle electric resistance measuring apparatus, and FIG. FIG. 5 is an explanatory diagram showing a measuring method when measuring an electric resistance value of the present invention. The semiconductor device inspection device of the present embodiment is provided with a probe needle electrical resistance measurement device 30 except that
It has the same configuration as the conventional semiconductor device inspection apparatus 10. As shown in FIG. 1, the probe needle electric resistance measuring device 30 includes all the probe needles 1 on the probe card substrate 16.
4 is provided with an aluminum disk 32 for contacting the card 4, a card checker 34, a lifting device (not shown) for lifting and lowering the card checker 34, and a power supply / measurement circuit 36.

The card checker 34 holds the aluminum disk 32 in the central holding area, and the base end 14a of each probe needle 14 provided on the probe card board 16 around the holding area of the aluminum disk 32 (FIG. 2). (See FIG. 3), the contact pins 38 that are in electrical contact with each other are set upright. The contact pins 38 are provided corresponding to each of the probe needles 14, and are each independently connected to the connection cable 4.
0 is connected to the power supply / measurement circuit 36.
As a result, each probe needle 14 is independently connected to the power supply / measurement circuit 36. The power supply / measurement circuit 36, as shown in FIG.
A voltmeter 44 and an ammeter 46 are provided, and a voltage can be independently applied between the aluminum disk 32 and each contact pin 38.

After cleaning the tip of the probe needle 14, the electric resistance of each probe needle 14, particularly the contact resistance between the aluminum disk 32 and the probe needle 14, is measured for each probe needle using the probe needle electric resistance measuring device 30. To be measured. At the time of measurement, first, the aluminum disk 32 is transported by the moving arm 28 and placed on the holding area of the card checker 34, and then the aluminum disk 32 is grounded.
Next, the card checker 34 holding the grounded aluminum disk 32 is raised to a predetermined position by a lifting device, and the tip of each contact pin 14 is brought into contact with the base end 14a of each probe needle 14 as shown in FIG. Then, the probe needle 14 is brought into contact with the aluminum disk 32.

Then, using the power supply / measurement circuit 36, the contact pin 14 and the aluminum disk 32 selected arbitrarily are selected.
And a current of about 100 mA flows. Then, from the readings of the voltmeter 44 and the ammeter 46, the electric resistance of the probe needle 14 is calculated. Similarly,
A voltage is sequentially applied to each contact pin 14, and the electrical resistance of the probe needle 14 in contact with each contact pin 14 is calculated.

It is determined whether or not the measured value of the electric resistance of each probe needle 14 is equal to or less than a predetermined value, and a probe needle having an electric resistance exceeding the predetermined value is specified. If the magnitude of the electric resistance value is a resistance value of several kilohms, it indicates that aluminum oxide is attached to the tip of the probe needle 14, and if there is no conduction, the probe needle 14 has poor contact or Indicates a disconnection.

In this embodiment, the electrical resistance of the probe needle is measured before starting the inspection of the semiconductor device or after the cleaning of the probe needle, so that the inspection of the semiconductor device can be performed while the tip of the probe needle is in an abnormal state. Can be prevented from occurring. As a result, it is possible to prevent erroneous determination and erroneous evaluation of the electrical characteristics during the inspection of the semiconductor device, and to relatively easily find a defective portion of the inspection device of the semiconductor device.

As described above, the present invention has been described by taking the example of checking the tip of a wafer measurement site in the present embodiment. However, the present invention is also applicable to a handler & socket type inspection apparatus for measuring the electrical characteristics of an IC assembly. The invention can be applied.

[0020]

According to the present invention, by providing an electric resistance measuring device for a probe needle, an inspection device for a semiconductor device having the following effects is realized. (1) In testing the electrical characteristics of a semiconductor device, if electrical resistance due to aluminum oxide or the like occurs at the tip of the probe needle, an abnormality in the probe needle can be reliably and quickly recognized. Misjudgment and erroneous evaluation can be prevented. Therefore, in the inspection of the semiconductor device, erroneous determination that a non-defective product is defective is eliminated, so that the yield can be improved. (2) Since an abnormal probe needle can be specified in a short time, the inspection efficiency is improved.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing a configuration of a probe needle electric resistance measuring device.

FIG. 2 is an explanatory diagram showing a method for measuring an electric resistance value of a probe needle.

FIG. 3 is a schematic diagram showing a configuration of a conventional semiconductor device inspection apparatus.

FIG. 4 is an enlarged view of an IC chip area formed on a wafer, showing a correspondence between probe needles of a probe card substrate and electrodes of the IC chip.

FIG. 5 is a schematic diagram illustrating a configuration of a prober device.

FIG. 6 is a graph showing a history of contact resistance of a probe needle.

[Explanation of symbols]

Reference Signs List 10: Conventional semiconductor device inspection apparatus, 12: Wafer stage, 14: Probe needle, 16: Probe card board, 18: Test head, 19: Connection cable, 20: LSI tester, 22 …… prober device,
24 housing 28 moving arm 30 probe needle resistance measuring device 32 aluminum disk 34 card checker 36 power supply / measuring circuit 38 contact pin 40 …… Connection cable, 4
2 ... power supply, 44 ... voltmeter, 46 ... ammeter.

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2G003 AA10 AG03 AG04 AG08 AG12 AH05 2G011 AA02 AA15 AA17 AC14 AE03 AF07 2G014 AA00 AB51 AC10 2G032 AF01 AL03 AL04 4M106 AA01 BA01 BA14 CA01 DD03 DD10 DD18 DD30

Claims (3)

[Claims] A wafer stage for holding a wafer;
A semiconductor device comprising: a probe card substrate provided with a probe needle, the probe card substrate for contacting the probe needle with an electrode of an IC chip formed on a wafer on a wafer stage; and a measuring device electrically connected to the probe needle of the probe card substrate. In an inspection device for inspecting electrical characteristics of the device, a conductive plate for contacting a probe needle, and a contact pin for holding the conductive plate and electrically contacting a base end of each probe needle provided on a probe card substrate, respectively. A card checker with an upright, an elevating device to raise and lower the card checker, and a contact pin of the card checker at the base end of the probe needle.
And the tip of the probe needle is brought into contact with the conductive plate, respectively, between the conductive plate and each contact pin of the card checker,
Sequentially, applying a voltage, causing a current to flow through the path of the contact pin, the probe needle and the conductive plate, and having a probe needle electric resistance measuring device having a measuring mechanism for independently measuring the electric resistance of each probe needle. An inspection apparatus for a semiconductor device. 2. The apparatus according to claim 1, wherein the conductive plate is an aluminum plate. 3. The semiconductor device inspection apparatus according to claim 1, wherein the conductive plate is grounded, and a voltage is applied between the contact pin and the ground.