JP2001302913A - Polyimide precursor solution and polyamide coating film obtainable therefrom - Google Patents

Polyimide precursor solution and polyamide coating film obtainable therefrom

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Publication number
JP2001302913A
JP2001302913A JP2000121340A JP2000121340A JP2001302913A JP 2001302913 A JP2001302913 A JP 2001302913A JP 2000121340 A JP2000121340 A JP 2000121340A JP 2000121340 A JP2000121340 A JP 2000121340A JP 2001302913 A JP2001302913 A JP 2001302913A
Authority
JP
Japan
Prior art keywords
polyimide precursor
polyimide
precursor solution
substrate
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000121340A
Other languages
Japanese (ja)
Inventor
Shinya Takagi
伸哉 高木
Hisashirou Eguchi
寿史朗 江口
Akira Shigeta
朗 繁田
Shigeki Imamura
茂樹 今村
Fumiko Okui
文子 奥井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unitika Ltd
Original Assignee
Unitika Ltd
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Filing date
Publication date
Application filed by Unitika Ltd filed Critical Unitika Ltd
Priority to JP2000121340A priority Critical patent/JP2001302913A/en
Publication of JP2001302913A publication Critical patent/JP2001302913A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a polyimide precursor solution which has a low viscosity even when it contains the solute of a polyimide precursor in a solvent at a high solids content ratio and does not cause cissing of a coating liquid against a substrate upon coating and is difficult to be affected by the state of the substrate surface, and a polyimide coating film having no pinhole at a thickness of <=10 μm and excellent surface smoothness. SOLUTION: This polyimide precursor solution comprises a salt composed of 3,4'-oxydianiline and 3,3',4,4'-biphenyltetracarboxylic acid and/or its derivative and 4,4'-oxydiphthalic acid and/or its derivative which is dissolved as the solute in an organic solvent with a molar ratio of the tetracarboxylic acid and/or its derivative of 0:100 to 90:10, and 0.001-5 pts. mass, based on 100 pts. mass salt as the solute, surface active agent containing a siloxane unit. The polyamide coating film has a thickness of <=10 μm which can be obtained by coating this solution on a substrate and imidating the coated film.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、シロキサン単位を
含む界面活性剤を含有するポリイミド前駆体溶液、及び
それから得られるポリイミド被膜に関するものである。
The present invention relates to a polyimide precursor solution containing a surfactant containing a siloxane unit, and a polyimide coating obtained therefrom.

【0002】[0002]

【従来の技術】従来、半導体装置などの各種電子部品の
表面保護膜や層間絶縁膜としては電気絶縁性や高耐熱性
に優れたポリイミドが広く用いられていた。また、ガラ
ス基板、あるいは透明な有機フィルム上に形成した蛍光
体に電流を流して発光させる有機エレクトロルミネッセ
ンスディスプレイ(有機ELディスプレイ)では、基板
上に陽極、有機EL層、陰極が順次積層されて構成され
るが、前記陽極と前記有機EL層の間の絶縁膜としてポ
リイミドの薄膜が使用されている。さらにまた、太陽電
池に適用される金属基板上にも絶縁保護膜としてポリイ
ミドが使われている。これら有機ELディスプレイや太
陽電池は積層相構造であるので、適用されるポリイミド
被膜には、10μm以下の厚みと、優れた表面平滑性な
らびにピンホールがないことが要求される。
2. Description of the Related Art Hitherto, polyimide having excellent electrical insulation and high heat resistance has been widely used as a surface protective film and an interlayer insulating film of various electronic components such as semiconductor devices. In an organic electroluminescence display (organic EL display) that emits light by passing a current through a phosphor formed on a glass substrate or a transparent organic film, an anode, an organic EL layer, and a cathode are sequentially laminated on the substrate. However, a polyimide thin film is used as an insulating film between the anode and the organic EL layer. Furthermore, polyimide is also used as an insulating protective film on a metal substrate applied to a solar cell. Since these organic EL displays and solar cells have a laminated phase structure, the applied polyimide film is required to have a thickness of 10 μm or less, excellent surface smoothness and no pinholes.

【0003】ところでポリイミド被膜を形成させる方法
としては、バーコーター法や塗工液を霧状にして基板に
吹きつけるスプレーコート法、あるいは遠心力によって
塗工するスピンコート法等が知られている。中でもスピ
ンコート法は厚みが10μm以下の薄膜を形成せしめる
ことに好適に用いられている。スピンコート法に用いら
れる塗工液の粘度は20℃で10ポイズ以下にする必要
があるが、塗工液の粘度が低いと、塗工時、塗工した液
の基板に対するハジキが発生し、被膜にピンホールや表
面に微小な凹凸ができたりするという問題があった。
As a method for forming a polyimide film, a bar coater method, a spray coating method in which a coating liquid is sprayed in a mist form onto a substrate, and a spin coating method in which coating is performed by centrifugal force are known. Among them, the spin coating method is suitably used for forming a thin film having a thickness of 10 μm or less. The viscosity of the coating liquid used in the spin coating method needs to be 10 poise or less at 20 ° C., but when the viscosity of the coating liquid is low, repelling occurs on the substrate of the coated liquid during coating, There was a problem that a pinhole was formed on the coating and minute irregularities were formed on the surface.

【0004】一方、ポリイミド被膜を形成する際に用い
られるポリイミド塗工液は、ジメチルアセトアミドやN
−メチルピロリドンを溶媒とし、ポリアミック酸を溶質
とするポリイミド前駆体溶液であり、この場合ポリアミ
ック酸の重合度が高く、溶媒への溶解度が小さいことに
起因して溶液中の固形分比率を高くすることが困難であ
った。言いかえるならば、従来のポリアミック酸をポリ
イミド前駆体としたポリイミド前駆体溶液は、固形分濃
度が低いにも関わらず、ポリアミック酸が高重合度であ
るが故に粘度が高いという本質的な問題があった。この
ポリアミック酸をポリイミド前駆体としたポリイミド前
駆体溶液をスピンコート法によって塗工する場合には、
その固形分濃度を極端に低下させる必要があった。従っ
て、従来のポリイミド塗工液から得られるポリイミド薄
膜は、塗工液の固形分濃度が低いために、塗工基板表面
のわずかなキズや異物、凹凸の跡が被膜表面に残るた
め、表面平滑性に乏しいという問題があった。
On the other hand, a polyimide coating solution used when forming a polyimide film is dimethylacetamide or N
-Is a polyimide precursor solution using methylpyrrolidone as a solvent and a polyamic acid as a solute, in which case the degree of polymerization of the polyamic acid is high, and the solid content in the solution is increased due to the low solubility in the solvent. It was difficult. In other words, a conventional polyimide precursor solution using a polyamic acid as a polyimide precursor has a fundamental problem that the viscosity is high because the polyamic acid has a high degree of polymerization, despite the low solid content concentration. there were. When applying a polyimide precursor solution using this polyamic acid as a polyimide precursor by spin coating,
It was necessary to extremely reduce the solid content concentration. Therefore, the polyimide thin film obtained from the conventional polyimide coating solution has a low solid content concentration, so that slight scratches, foreign substances, and traces of irregularities on the surface of the coated substrate remain on the coating surface. There was a problem of poor sex.

【0005】以上のように、従来、厚みが10μm以下
のポリイミド被膜を得ようとする場合には、ポリイミド
塗工液は粘度の低いものを使用しており、粘度の低い塗
工液を基板上に塗工すると基板上でのハジキが発生し、
また、その結果、得られるポリイミド被膜にピンホール
が発生するという問題があった。また、ポリイミド塗工
液の固形分濃度が低いと、基板表面の状態に影響されや
すく、得られるポリイミド被膜の表面平滑性が低いとい
う問題もあった。
As described above, conventionally, when a polyimide coating having a thickness of 10 μm or less is to be obtained, a polyimide coating liquid having a low viscosity is used, and a coating liquid having a low viscosity is applied to a substrate. Coating will cause cissing on the board,
Further, as a result, there is a problem that a pinhole is generated in the obtained polyimide film. Further, when the solid content concentration of the polyimide coating solution is low, there is also a problem that the state of the substrate surface is easily affected, and the surface smoothness of the obtained polyimide film is low.

【0006】[0006]

【発明が解決しようとする課題】このような状況に鑑
み、本発明の第1の課題は、溶媒中に溶質であるポリイ
ミド前駆体が高い固形分比率で含有しても低粘度であ
り、塗工時に塗工した液の基板に対するハジキが発生せ
ず、基板表面の状態に影響されないポリイミド前駆体溶
液を提供すること、また第2の課題は、膜厚が10μm
以下でピンホールがなく、表面平滑性に優れるポリイミ
ド被膜を生産性よく提供することにある。
SUMMARY OF THE INVENTION In view of such circumstances, a first object of the present invention is to provide a polyimide precursor which is a solute in a solvent at a high solid content ratio and have a low viscosity. A second object of the present invention is to provide a polyimide precursor solution which does not cause cissing of the liquid applied at the time of processing on the substrate and is not affected by the state of the substrate surface.
An object of the present invention is to provide a polyimide film having no pinholes and excellent in surface smoothness with high productivity.

【0007】[0007]

【課題を解決するための手段】本発明者らは、上記の課
題を解決するため、鋭意検討を行った結果、有機溶剤に
特定のジアミンとカルボン酸及び/又はその誘導体とよ
りなる塩が溶質として溶解しており、かつ特定の構造単
位を有する界面活性剤を含むポリイミド前駆体溶液は、
高い固形分比率を有していても低粘度であり、かつ塗工
した液の基板に対するハジキがなく、基板表面のキズや
凹凸や異物等の基板表面の状態に影響されにくいことを
見出した。そして、この溶液から得られるポリイミド被
膜は、ピンホールが発生せず、表面平滑性を有している
ことを見いだし、本発明に到達した。
Means for Solving the Problems The present inventors have conducted intensive studies to solve the above-mentioned problems, and as a result, a salt comprising a specific diamine and a carboxylic acid and / or a derivative thereof has been dissolved in an organic solvent. Is dissolved as, and a polyimide precursor solution containing a surfactant having a specific structural unit,
It has been found that even if it has a high solid content ratio, it has a low viscosity, has no cissing of the coated liquid on the substrate, and is hardly influenced by the state of the substrate surface such as scratches, irregularities, and foreign matter on the substrate surface. Then, it was found that the polyimide film obtained from this solution did not generate pinholes and had surface smoothness, and the present invention was reached.

【0008】すなわち、本発明の要旨は第1に、下記式
(1)に示す3,4’−オキシジアニリンと、下記式
(2)に示す3,3’,4,4’−ビフェニルテトラカ
ルボン酸及び/又はその誘導体ならびに下記式(3)に
示す4,4’−オキシジフタル酸及び/又はその誘導体
とからなる塩が溶質として有機溶媒中に溶解しており、
前記式(2)に示す3,3’,4,4’−ビフェニルテ
トラカルボン酸及び/又はその誘導体と式(3)に示す
4,4’−オキシジフタル酸及び/又はその誘導体との
モル比が0:100〜90:10であり、かつ溶質とし
ての塩100質量部に対して下記式(4)に示すシロキ
サン単位を含む界面活性剤を0.001〜5質量部含有
していることを特徴とするポリイミド前駆体溶液であ
る。
That is, the gist of the present invention is to firstly disclose 3,4'-oxydianiline represented by the following formula (1) and 3,3 ', 4,4'-biphenyltetrane represented by the following formula (2) A salt comprising a carboxylic acid and / or a derivative thereof and 4,4′-oxydiphthalic acid and / or a derivative thereof represented by the following formula (3) is dissolved in an organic solvent as a solute;
The molar ratio of 3,3 ′, 4,4′-biphenyltetracarboxylic acid and / or a derivative thereof represented by the formula (2) to 4,4′-oxydiphthalic acid and / or a derivative thereof represented by the formula (3) is as follows. 0: 100 to 90:10, and 0.001 to 5 parts by mass of a surfactant containing a siloxane unit represented by the following formula (4) based on 100 parts by mass of a salt as a solute. Is a polyimide precursor solution.

【0009】[0009]

【化2】 Embedded image

【0010】(式中R,R1 ,R2 ,R3 はそれぞれ独
立に水素原子及び炭素数1〜5のアルキル基から選ば
れ、R4 ,R5 はそれぞれ独立に水素原子、炭素数1〜
5のアルキル基、アルコキシ基及びフェニル基から選ば
れる。) 第2に前記ポリイミド前駆体溶液において、溶質として
の塩の濃度が30〜80質量%であり、かつ溶液粘度が
10ポイズ以下であることを特徴とするポリイミド前駆
体溶液である。第3に前記、ポリイミド前駆体溶液を基
板上に塗工し、加熱イミド化して得られる厚みが10μ
m以下であることを特徴とするポリイミド被膜である。
Wherein R, R 1 , R 2 , and R 3 are each independently selected from a hydrogen atom and an alkyl group having 1 to 5 carbon atoms, and R 4 and R 5 are each independently a hydrogen atom and 1 carbon atom. ~
5 selected from an alkyl group, an alkoxy group and a phenyl group. Second, the polyimide precursor solution is characterized in that the concentration of the salt as a solute in the polyimide precursor solution is 30 to 80% by mass and the solution viscosity is 10 poise or less. Third, a polyimide precursor solution is coated on a substrate, and the thickness obtained by heating and imidization is 10 μm.
m or less.

【0011】[0011]

【発明の実施の形態】以下本発明について詳細に説明す
る。まず、本発明で用いる用語について説明する。 (1)ポリイミド ポリマー鎖の繰り返し単位の80モル%以上がイミド構
造を有する有機ポリマーをいう。そして、この有機ポリ
マーは耐熱性を示す。 (2)ポリイミド前駆体 加熱又は、化学的作用により閉環してポリイミドとなる
有機化合物をいう。ここで、閉環とはイミド環構造が形
成されることをいう。 (3)ポリイミド前駆体溶液 ポリイミド前駆体が溶媒に溶解しているものである。こ
こで溶媒とは、25℃で液状の化合物をいう。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail. First, terms used in the present invention will be described. (1) Polyimide An organic polymer in which 80 mol% or more of the repeating unit of the polymer chain has an imide structure. And this organic polymer shows heat resistance. (2) Polyimide precursor An organic compound that becomes a polyimide by ring closure by heating or chemical action. Here, ring closure means that an imide ring structure is formed. (3) Polyimide precursor solution The polyimide precursor is dissolved in a solvent. Here, the solvent refers to a compound which is liquid at 25 ° C.

【0012】(4)粘度 (株)トキメック社製、DVL−BII型デジタル粘度計
(B型粘度計)を用い、20℃における回転粘度を測定
したものである。 (5)溶質濃度 溶液中に占めるポリイミド前駆体の質量割合を百分率で
表した数値である。 (6)ポリイミド被膜の厚み (株)ミツトヨ製デジマチックマイクロメーターを用
い、ポリイミド被膜の厚みを10箇所で測定し、その平
均値として求めたものである。 (7)表面平滑性 3次元表面粗さ測定装置(小阪研究所社製 ET−30
K、触針測定)を用い、基板表面又は基板上に形成した
ポリイミド被膜表面の中心面平均粗さ(SRa)を測定
し、その数値から基板表面又はポリイミド被膜表面の平
滑性の評価を行った。
(4) Viscosity The rotational viscosity at 20 ° C. was measured using a DVL-BII type digital viscometer (B type viscometer) manufactured by Tokimec Co., Ltd. (5) Solute concentration It is a numerical value expressing the mass ratio of the polyimide precursor in the solution in percentage. (6) Thickness of the polyimide film The thickness of the polyimide film was measured at 10 locations using a Digimatic Micrometer manufactured by Mitutoyo Corporation, and the average value was obtained. (7) Surface smoothness Three-dimensional surface roughness measuring device (ET-30 manufactured by Kosaka Laboratory Co., Ltd.)
K, stylus measurement), the center plane average roughness (SRa) of the substrate surface or the surface of the polyimide film formed on the substrate was measured, and the smoothness of the substrate surface or the surface of the polyimide film was evaluated from the numerical value. .

【0013】さらに、本発明について説明する。本発明
のポリイミド前駆体溶液において、溶質である塩は式
(1)に示す3,4’−オキシジアニリンと、式(2)
に示す3,3’,4,4’−ビフェニルテトラカルボン
酸及び/又はその誘導体ならびに式(3)に示す4,
4’−オキシジフタル酸及び/又はその誘導体とからな
る〔式(2)及び式(3)において、R,R1 ,R2
3 はそれぞれ独立に水素原子及び炭素数1〜5のアル
キル基から選ばる。〕。そして、式(2)に示す3,
3’,4,4’−ビフェニルテトラカルボン酸及び/又
はその誘導体と式(3)に示す4,4’−オキシジフタ
ル酸及び/又はその誘導体とのモル比は、0:100〜
90:10が好ましい。式(3)に示す4,4’−オキ
シジフタル酸及び/又はその誘導体のモル比が10未満
の場合には、得られるポリイミド被膜の基板への密着力
が低下して、被膜が基板から剥離する場合がある。
Further, the present invention will be described. In the polyimide precursor solution of the present invention, the solute salt is 3,4′-oxydianiline represented by the formula (1) and a salt represented by the formula (2)
3,3 ', 4,4'-biphenyltetracarboxylic acid and / or a derivative thereof shown in Formula (3) and 4,3'
4'-oxydiphthalic acid and / or a derivative thereof [in the formulas (2) and (3), R, R 1 , R 2 ,
R 3 is independently selected from a hydrogen atom and an alkyl group having 1 to 5 carbon atoms. ]. Then, 3 shown in equation (2)
The molar ratio of 3 ′, 4,4′-biphenyltetracarboxylic acid and / or a derivative thereof to 4,4′-oxydiphthalic acid and / or a derivative thereof represented by the formula (3) is 0: 100 to
90:10 is preferred. When the molar ratio of 4,4′-oxydiphthalic acid and / or a derivative thereof represented by the formula (3) is less than 10, the adhesion of the obtained polyimide film to the substrate decreases, and the film peels from the substrate. There are cases.

【0014】本発明のポリイミド前駆体溶液において
は、式(2)及び(3)に示すテトラカルボン酸及び/
又はその誘導体の一部を、一般式(5)に示すカルボン
酸又は一般式(6)に示すジカルボン酸無水物に置き換
えてもよい。このとき、式(2)及び(3)に示すテト
ラカルボン酸及び/又はその誘導体のモル数の和と、一
般式(5)に示すカルボン酸又は一般式(6)に示すジ
カルボン酸無水物とのモル比は100:0〜100:2
0が好ましく、100:0〜100:11がさらに好ま
しい。式(2)及び(3)に示すテトラカルボン酸及び
/又はその誘導体モル数の和100に対する一般式
(5)に示すカルボン酸又は一般式(6)に示すジカル
ボン酸無水物のモル比が20を超えると強度の低いポリ
イミド被膜しか得られないことがある。
In the polyimide precursor solution of the present invention, tetracarboxylic acids represented by the formulas (2) and (3) and / or
Alternatively, part of the derivative thereof may be replaced with a carboxylic acid represented by the general formula (5) or a dicarboxylic anhydride represented by the general formula (6). At this time, the sum of the number of moles of the tetracarboxylic acid and / or the derivative thereof represented by the formulas (2) and (3) and the carboxylic acid represented by the general formula (5) or the dicarboxylic anhydride represented by the general formula (6) Is a molar ratio of 100: 0 to 100: 2
0 is preferable, and 100: 0 to 100: 11 is more preferable. The molar ratio of the carboxylic acid represented by the general formula (5) or the dicarboxylic anhydride represented by the general formula (6) to the sum of 100 moles of the tetracarboxylic acid and / or the derivative thereof represented by the formulas (2) and (3) is 20. When it exceeds, only a polyimide film having low strength may be obtained.

【0015】[0015]

【化3】 Embedded image

【0016】〔式中R6 は2つのカルボニル基が隣接し
た炭素原子に直接連結している少なくとも1つの6員環
を含む2価の芳香族残基を表し、R7 は水素原子又は炭
素数1〜5のアルキル基を表し、R8 は2つのカルボニ
ル基が隣接した炭素原子に直接連結している少なくとも
1つの6員環を含む2価の芳香族残基を表す。〕
Wherein R 6 represents a divalent aromatic residue containing at least one 6-membered ring in which two carbonyl groups are directly linked to adjacent carbon atoms, and R 7 is a hydrogen atom or a carbon atom; Represents an alkyl group of 1 to 5, and R 8 represents a divalent aromatic residue containing at least one 6-membered ring in which two carbonyl groups are directly connected to adjacent carbon atoms. ]

【0017】さらに、式(2)及び(3)に示すテトラ
カルボン酸及び/又はその誘導体の一部を、式(7)に
示す3,3’,4,4’−ビフェニルテトラカルボン酸
二無水物及び/又は式(8)に示す4,4’−オキシジ
フタル酸二無水物に置き換えてもよい。このとき、式
(2)及び(3)に示すテトラカルボン酸及び/又はそ
の誘導体のモル数の和と、式(7)及び(8)に示すテ
トラカルボン酸二無水物のモル数の和のモル比は、10
0:0〜70:30が好ましい。このモル比を調節する
ことによってポリイミド前駆体溶液の粘度を微調整する
ことができる。式(7)及び(8)に示すテトラカルボ
ン酸二無水物のモル数の和が30モル%を超えると本発
明の特徴である低粘度なポリイミド前駆体溶液を得るこ
とができないことがある。
Further, a part of the tetracarboxylic acid represented by the formulas (2) and (3) and / or a derivative thereof is converted to 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride represented by the formula (7). And / or 4,4′-oxydiphthalic dianhydride shown in formula (8). At this time, the sum of the number of moles of the tetracarboxylic acid and / or its derivative shown in the formulas (2) and (3) and the sum of the number of moles of the tetracarboxylic dianhydride shown in the formulas (7) and (8) The molar ratio is 10
0: 0 to 70:30 is preferred. By adjusting this molar ratio, the viscosity of the polyimide precursor solution can be finely adjusted. If the sum of the number of moles of the tetracarboxylic dianhydride represented by the formulas (7) and (8) exceeds 30 mol%, a low-viscosity polyimide precursor solution which is a feature of the present invention may not be obtained.

【0018】[0018]

【化4】 Embedded image

【0019】またさらに、式(1)に示す3,4’−オ
キシジアニリンの一部を、一般式(9)に示す1官能性
のアミンに置き換えてもよい。この場合、式(1)に示
す3,4’−オキシジアニリンに対する一般式(9)に
示すアミンのモル比は100:0〜100:20である
ことが好ましく、100:0〜100:11がさらに好
ましい。一般式(9)に示すアミンが20モル%を超え
ると強度の低いポリイミド被膜しか得られないことがあ
る。〔式中R9 は少なくとも1つの6員環を含む芳香族
残基を表す。〕
Furthermore, a part of the 3,4′-oxydianiline represented by the formula (1) may be replaced with a monofunctional amine represented by the formula (9). In this case, the molar ratio of the amine represented by the general formula (9) to the 3,4′-oxydianiline represented by the formula (1) is preferably 100: 0 to 100: 20, and 100: 0 to 100: 11. Is more preferred. When the amine represented by the general formula (9) exceeds 20 mol%, only a polyimide film having low strength may be obtained. Wherein R 9 represents an aromatic residue containing at least one 6-membered ring. ]

【0020】[0020]

【化5】 Embedded image

【0021】また、本発明のポリイミド前駆体溶液に
は、溶質である塩100質量部に対して式(4)に示す
シロキサン単位を含む界面活性剤〔式中R4 ,R5 はそ
れぞれ独立に水素原子、炭素数1〜5のアルキル基、ア
ルコキシ基及びフェニル基から選ばれる。〕を0.00
1〜5質量部、好ましくは0.001〜1質量部を含有
させる。界面活性剤の含有量が0.001質量部未満で
あると、ポリイミド前駆体溶液を基板に塗工した際、塗
工した液の基板に対するハジキが発生する場合がある。
一方、界面活性剤が5質量部を超えると、製膜性が低下
してクラックや割れが発生し、均一な被膜が得られない
場合がある。
The polyimide precursor solution of the present invention comprises a surfactant containing a siloxane unit represented by the formula (4) with respect to 100 parts by mass of a solute salt [wherein R 4 and R 5 are each independently It is selected from a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, an alkoxy group and a phenyl group. Is 0.00
1 to 5 parts by mass, preferably 0.001 to 1 part by mass. When the content of the surfactant is less than 0.001 part by mass, when the polyimide precursor solution is applied to the substrate, repelling of the applied liquid to the substrate may occur.
On the other hand, when the amount of the surfactant exceeds 5 parts by mass, the film-forming property is reduced, cracks and cracks are generated, and a uniform film may not be obtained.

【0022】本発明のポリイミド前駆体溶液は、シロキ
サン単位を含む界面活性剤を前記のような割合で含有さ
せることにより、ガラス基板、セラミック基板、ポリイ
ミド等の有機材基板、アルミ、銅、金、銀、ニッケル等
の金属基板に対して塗工した液のハジキが発生しなくな
る。
The polyimide precursor solution of the present invention contains a surfactant containing a siloxane unit in the above-described ratio, so that a glass substrate, a ceramic substrate, an organic material substrate such as polyimide, aluminum, copper, gold, Repelling of the liquid applied to a metal substrate such as silver or nickel does not occur.

【0023】本発明で使用できるシロキサン単位を含む
界面活性剤としては、入手が容易なレベリング剤、消泡
剤、整泡剤等が挙げられ、具体的にはポリエーテル変成
したジメチルポリシロキサン、ポリエーテル変成したメ
チルアルキルポリシロキサン、ポリエステル変成したジ
メチルポリシロキサン、ポリエステル変成したメチルア
ルキルポリシロキサン、アラルキル変成したメチルポリ
シロキサン等が挙げられる。
Examples of the surfactant containing a siloxane unit that can be used in the present invention include easily available leveling agents, defoamers, foam stabilizers, and the like. Specifically, polyether-modified dimethylpolysiloxane, polyether Examples include ether-modified methylalkylpolysiloxane, polyester-modified dimethylpolysiloxane, polyester-modified methylalkylpolysiloxane, and aralkyl-modified methylpolysiloxane.

【0024】本発明のポリイミド前駆体溶液中のポリイ
ミド前駆体の濃度は、30〜80質量%であることが好
ましい。40〜80質量%であることがより好ましい。
濃度が30質量%より低いと、塗工する基板表面の傷や
異物、凹凸が被膜表面の凹凸として残る場合がある。一
方、濃度が80質量%より高いと、選定する溶媒の種類
によりポリイミド前駆体を安定的に溶解することが困難
となる場合があるので好ましくない。
The concentration of the polyimide precursor in the polyimide precursor solution of the present invention is preferably 30 to 80% by mass. More preferably, it is 40 to 80% by mass.
If the concentration is lower than 30% by mass, scratches, foreign matter, and irregularities on the surface of the substrate to be coated may remain as irregularities on the coating surface. On the other hand, if the concentration is higher than 80% by mass, it may be difficult to stably dissolve the polyimide precursor depending on the type of the selected solvent, which is not preferable.

【0025】本発明のポリイミド前駆体溶液の溶液粘度
は、10ポイズ以下が好ましい。10ポイズ以上では、
塗工液の流動性が十分ではなく、特にスピンコート法に
おいて厚みが10μm以下の被膜を作製する場合には、
厚みムラが起こりやすく均一な厚みの被膜を作製できな
い場合があるので好ましくない。
The solution viscosity of the polyimide precursor solution of the present invention is preferably 10 poise or less. With 10 poise or more,
When the fluidity of the coating liquid is not sufficient, especially when a film having a thickness of 10 μm or less is produced by a spin coating method,
It is not preferable because thickness unevenness easily occurs and a film having a uniform thickness cannot be produced.

【0026】本発明におけるポリイミド前駆体溶液は、
式(1)に示す3,4’−オキシジアニリンと式(2)
に示す3,3’,4,4’−ビフェニルテトラカルボン
酸及び/又はその誘導体ならびに式(3)に示す4,
4’−オキシジフタル酸及び/又はその誘導体を、有機
溶媒に順次添加することにより製造することができる。
添加する順序はいかなる順序でもよい。
The polyimide precursor solution in the present invention comprises:
3,4′-oxydianiline represented by formula (1) and formula (2)
3,3 ', 4,4'-biphenyltetracarboxylic acid and / or a derivative thereof shown in Formula (3) and 4,3'
It can be produced by sequentially adding 4'-oxydiphthalic acid and / or a derivative thereof to an organic solvent.
The order of addition may be any order.

【0027】本発明で使用する有機溶媒は、溶質である
ポリイミド前駆体と界面活性剤を溶解するものであれば
特に限定されないが、たとえばN−メチルピロリドン、
ジメチルフォルムアミド、ジメチルアセトアミド、ジメ
チルスルホキシド、ヘキサメチルホスホリルトリアミ
ド、スルホラン、N,N’−ジメチルイミダゾリジノ
ン、N−メチルカプロラクタムなどの分子中にN,S,
P原子を含む極性溶媒やセルソルブ、フェニルセルソル
ブなどのセルソルブ類、酢酸エチルセルソルブ、酢酸ブ
チルセルソルブなどの酢酸セルソルブ類、メチルカルビ
トール、エチルカルビトールなどのカルビトール類、酢
酸エチルカルビトール、酢酸ブチルカルビトールなどの
酢酸カルビトール類、ジメチルカルビトール(ジグライ
ム)、ジエチルカルビトールなどのカルビトールジエー
テル類、シクロヘキサノール、ベンジルアルコールなど
のアルコール類、シクロヘキサノン、イソホロンなどの
ケトン類、γ―ブチロラクトンなどが挙げられる。
The organic solvent used in the present invention is not particularly limited as long as it can dissolve the solute polyimide precursor and the surfactant. For example, N-methylpyrrolidone,
N, S, N, S, and N are contained in molecules such as dimethylformamide, dimethylacetamide, dimethylsulfoxide, hexamethylphosphoryltriamide, sulfolane, N, N'-dimethylimidazolidinone, and N-methylcaprolactam.
Polar solvents containing P atoms, cellosolves such as cellosolve, phenyl cellosolve, cellosolves such as ethyl acetate cellosolve, butyl acetate cellosolve, carbitols such as methyl carbitol and ethyl carbitol, ethyl carbitol acetate, Carbitol acetates such as butyl carbitol acetate, carbitol diethers such as dimethyl carbitol (diglyme) and diethyl carbitol, alcohols such as cyclohexanol and benzyl alcohol, ketones such as cyclohexanone and isophorone, γ-butyrolactone And the like.

【0028】本発明のポリイミド前駆体溶液からポリイ
ミド被膜を得るための塗工方法としては通常の方法が採
用され、例えば、スピンコート法、スプレイコート法及
びバーコーター法等の方法が挙げられ、厚みが10μm
以下の表面平滑性に優れた薄膜を作製する場合には、ス
ピンコート法が好適に用いられる。スピンコート法以外
の塗工方法においても、本発明のポリイミド前駆体溶液
を用いると、従来のポリイミド前駆体溶液を用いてポリ
イミド被膜を製造する場合に比較して、表面平滑性に優
れたポリイミド被膜を得ることができる。
As a coating method for obtaining a polyimide film from the polyimide precursor solution of the present invention, a usual method is adopted, for example, a method such as a spin coating method, a spray coating method and a bar coater method. Is 10 μm
When a thin film having the following excellent surface smoothness is produced, a spin coating method is suitably used. Even in coating methods other than the spin coating method, when the polyimide precursor solution of the present invention is used, a polyimide film having excellent surface smoothness, compared to the case of producing a polyimide film using a conventional polyimide precursor solution Can be obtained.

【0029】ポリイミド被膜は、ポリイミド前駆体溶液
を基板もしくは基材上に塗工し、乾燥して溶媒を除去し
た後、ポリイミド前駆体の塗膜を得、これをイミド化し
てポリイミド被膜を得る。さらに、基材から剥離して、
あるいはポリイミド前駆体の塗膜を基材から剥離してイ
ミド化するとポリイミドフィルムが得られる。本発明に
おいてポリイミドフィルムはポリイミド被膜の範疇に入
るものである。イミド化は150℃以上、好ましくは2
00℃以上、より好ましくは250℃以上で、10分間
以上、好ましくは30分間以上加熱して行う。
The polyimide film is obtained by applying a polyimide precursor solution onto a substrate or a substrate, drying the solvent and removing the solvent, obtaining a polyimide precursor film, and imidizing the film to obtain a polyimide film. In addition, peel from the substrate,
Alternatively, a polyimide film is obtained by peeling the coating film of the polyimide precursor from the substrate and imidating the same. In the present invention, the polyimide film falls under the category of polyimide coating. The imidization is performed at 150 ° C. or higher, preferably 2
The heating is performed at a temperature of 00 ° C. or higher, more preferably 250 ° C. or higher, for 10 minutes or longer, preferably 30 minutes or longer.

【0030】さらに、本発明のポリイミド前駆体溶液に
は、必要に応じて例えば、顔料、導電性のカーボンブラ
ック及び金属粒子のような充填剤、摩滅剤、誘電体、潤
滑剤等の他公知の添加物を本発明の効果を損なわない範
囲で添加することができる。また、他の重合体や例えば
水不溶性のエーテル類、アルコール類、ケトン類、エス
テル、ハロゲン化炭化水素類、炭化水素類等の溶媒を本
発明の効果を損なわない範囲で添加することができる。
Further, if necessary, the polyimide precursor solution of the present invention may contain other known additives such as fillers such as pigments, conductive carbon black and metal particles, abrasives, dielectrics and lubricants. Additives can be added as long as the effects of the present invention are not impaired. In addition, other polymers and solvents such as water-insoluble ethers, alcohols, ketones, esters, halogenated hydrocarbons, hydrocarbons and the like can be added within a range not to impair the effects of the present invention.

【0031】本発明のポリイミド前駆体溶液から得られ
るポリイミド被膜、特に10μm以下の厚みのポリイミ
ド被膜においては、ピンホールを含まず、かつ基板表面
のキズや異物や凹凸に関係無く優れた表面平滑性を有す
るので、表面保護膜、層間絶縁膜等として好適に用いら
れ、例えば、太陽電池基板、EL素子基板、耐熱絶縁用
素子、コンデンサー等に用いられる。また、本発明のポ
リイミド前駆体溶液においても、これらの製品の製造に
用いることができる。
The polyimide coating obtained from the polyimide precursor solution of the present invention, particularly the polyimide coating having a thickness of 10 μm or less, does not contain pinholes and has excellent surface smoothness irrespective of scratches, foreign matter, or irregularities on the substrate surface. Therefore, it is suitably used as a surface protective film, an interlayer insulating film, and the like, and is used for, for example, a solar cell substrate, an EL element substrate, a heat-resistant insulating element, a capacitor and the like. The polyimide precursor solution of the present invention can also be used for producing these products.

【0032】[0032]

【実施例】以下、本発明を実施例を用いて詳細に説明す
る。 実施例1 溶媒としてのN−メチルピロリドン500gに4,4’
−オキシジフタル酸(ODPA)270.0g(0.8
7mol)を溶解し、次いでメタノール83.56g
(2.61mol)とトリエチルアミン4.18gを添
加した。この溶液を温水浴にて内温80℃で、攪拌下2
時間にてエステル化反応させ、4,4’−オキシジフタ
ル酸ジメチルエステルを含有する溶液を得た。この反応
溶液を50℃まで冷却した後、3,4’−オキシジアニ
リン174.29g(0.87mol)を添加し、2時
間攪拌溶解し、均一なポリイミド前駆体溶液を得た。さ
らに、シロキサン単位を含む界面活性剤BYK−302
(ビッグケミー・ジャパン(株)社製、ポリエーテル変
成したジメチルポリシロキサン)を、得られたポリイミ
ド前駆体溶液の固形分に対して0.5質量%である2.
5gを添加し、25℃にて系が均一になるまで攪拌溶解
して、ポリイミド前駆体溶液(黒色)を得た(固形分濃
度50質量%)。この溶液の粘度を測定したところ、2
0℃で1.8ポイズであった。さらにこの溶液をスピン
コーター(ミカサ(株)社製、1H−DX)を用いて回
転数4,000rpm、30秒にて8インチ−シリコン
ウエハー基板上に塗工した。この際、塗工した液の基板
に対するハジキは発生しなかった。その後、塗工した液
を窒素雰囲気下80℃で5時間乾燥した後、窒素雰囲気
下300℃で5時間加熱イミド化を行い、厚み2μmの
ポリイミド被膜を得た。このポリイミド被膜内のピンホ
ールは観察されなかった。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to embodiments. Example 1 4,4 ′ was added to 500 g of N-methylpyrrolidone as a solvent.
-270.0 g of oxydiphthalic acid (ODPA) (0.8
7 mol) and then 83.56 g of methanol
(2.61 mol) and 4.18 g of triethylamine were added. This solution was stirred in a hot water bath at an internal temperature of 80 ° C. for 2 hours.
The esterification reaction was carried out over a period of time to obtain a solution containing 4,4'-oxydiphthalic acid dimethyl ester. After the reaction solution was cooled to 50 ° C., 174.29 g (0.87 mol) of 3,4′-oxydianiline was added, and the mixture was stirred and dissolved for 2 hours to obtain a uniform polyimide precursor solution. Furthermore, a surfactant BYK-302 containing a siloxane unit.
(Polyether modified dimethylpolysiloxane manufactured by Big Chemie Japan KK) is 0.5% by mass based on the solid content of the obtained polyimide precursor solution.
5 g was added, and the mixture was stirred and dissolved at 25 ° C. until the system became uniform to obtain a polyimide precursor solution (black) (solid content concentration: 50% by mass). When the viscosity of this solution was measured,
It was 1.8 poise at 0 ° C. Further, this solution was applied on an 8-inch silicon wafer substrate at 4,000 rpm for 30 seconds using a spin coater (1H-DX, manufactured by Mikasa Corporation). At this time, no repelling of the applied liquid to the substrate occurred. Thereafter, the applied liquid was dried at 80 ° C. for 5 hours in a nitrogen atmosphere, and then heated and imidized at 300 ° C. for 5 hours in a nitrogen atmosphere to obtain a polyimide film having a thickness of 2 μm. No pinholes were observed in the polyimide coating.

【0033】さらに、同溶液を、中心面平均粗さ(SR
a)が50nmであるアルミ基板(直径100mm)
に、同様にスピンコートし、熱イミド化を行ない、ポリ
イミド被膜を得た。得られたポリイミド被膜は、厚みが
2μmで、ピンホールは観察されず、さらにSRaは
0.5nmであり、非常に表面平滑性に優れたものであ
った。
Further, the solution was subjected to a center plane average roughness (SR
Aluminum substrate with a) of 50 nm (diameter 100 mm)
Was similarly spin-coated and thermally imidized to obtain a polyimide film. The obtained polyimide film had a thickness of 2 μm, no pinholes were observed, and SRa was 0.5 nm, which was very excellent in surface smoothness.

【0034】実施例2 塗工基板として、中心面平均粗さ(SRa)が40nm
であり、直径100mmのガラス基板を用いた以外は全
て実施例1と同様な方法でポリイミド被膜を形成させ
た。塗工時には、塗工した液の基板に対するハジキは発
生しなかった。得られたポリイミド被膜は、膜厚が2μ
mであり、ピンホールは観察されず、SRaが0.7n
mであり、表面平滑性に優れるものであった。
Example 2 The coated substrate had a center plane average roughness (SRa) of 40 nm.
A polyimide film was formed in the same manner as in Example 1 except that a glass substrate having a diameter of 100 mm was used. At the time of coating, no cissing of the coated liquid on the substrate occurred. The resulting polyimide film has a thickness of 2 μm.
m, no pinhole was observed, and SRa was 0.7 n
m and excellent surface smoothness.

【0035】実施例3 界面活性剤を、シロキサン単位を含むBYK−333
(ビッグケミー・ジャパン(株)社製、ポリエーテル変
成したジメチルポリシロキサン)にする以外は全て実施
例1と同様の仕込みと条件で反応を行い、ポリイミド前
駆体溶液(黒色)を得た。この溶液の粘度を測定したと
ころ、20℃、1.8ポイズであった。さらにこの溶液
を実施例1と同様な方法ならびに条件で、SRaが50
nmであるアルミ基板(直径100mm)上にポリイミ
ド被膜を形成させた。塗工時には、塗工した液の基板に
対するハジキは発生しなかった。得られたポリイミド被
膜の厚みは2μmで、被膜面内のピンホールは観察され
ず、かつSRaは0.4nmであった。
Example 3 The surfactant was changed to BYK-333 containing a siloxane unit.
The reaction was carried out under the same conditions and conditions as in Example 1 except that (polyether modified dimethylpolysiloxane manufactured by Big Chemie Japan KK) was used to obtain a polyimide precursor solution (black). When the viscosity of this solution was measured, it was 20 ° C. and 1.8 poise. Further, this solution was prepared in the same manner and under the same conditions as in Example 1 to obtain an SRa of 50%.
A polyimide film was formed on an aluminum substrate (diameter 100 mm) having a diameter of nm. At the time of coating, no cissing of the coated liquid on the substrate occurred. The thickness of the obtained polyimide film was 2 μm, no pinhole was observed in the film surface, and SRa was 0.4 nm.

【0036】実施例4 界面活性剤を、シロキサン単位を含むSH193(東レ
ダウコーニング社製、変成シリコーンオイル)にする以
外は全て実施例1と同様の仕込みと条件で反応を行い、
本発明のポリイミド前駆体溶液(黒色)を得た。この溶
液の粘度は、20℃で1.8ポイズであった。さらにこ
の溶液を実施例1と同様な方法ならびに条件で、SRa
が50nmであるアルミ基板(直径100mm)上にポ
リイミド被膜を形成させた。塗工時には、塗工した液の
基板に対するハジキは発生しなかった。得られたポリイ
ミド被膜の厚みは2μmで、被膜面内のピンホールは観
察されず、かつSRaは0.5nmであった。
Example 4 A reaction was carried out under the same preparation and conditions as in Example 1 except that the surfactant was SH193 containing a siloxane unit (modified silicone oil, manufactured by Dow Corning Toray Co., Ltd.).
A polyimide precursor solution (black) of the present invention was obtained. The viscosity of this solution was 1.8 poise at 20 ° C. Further, this solution was prepared in the same manner and under the same conditions as in Example 1 using SRa.
Was formed on an aluminum substrate (diameter 100 mm) having a thickness of 50 nm. At the time of coating, no cissing of the coated liquid on the substrate occurred. The thickness of the obtained polyimide film was 2 μm, no pinhole was observed in the film surface, and SRa was 0.5 nm.

【0037】実施例5 溶媒としてのN−メチルピロリドン500gに3,
3’,4,4’−ビフェニルテトラカルボン酸(BPD
A)70.9g(0.24mol)ならびに4,4’−
オキシジフタル酸(ODPA)174.5g(0.56
mol)を溶解し、次いでメタノール77.13g
(0.24mol)とトリエチルアミン3.86gを添
加した(BPDAとODPAのモル比は7:3)。この
溶液を温水浴にて内温80℃で、攪拌下2時間にてエス
テル化反応させ、3,3’,4,4’−ビフェニルテト
ラカルボン酸ジメチルエステルと4,4’−オキシジフ
タル酸ジメチルエステル(3,3’,4,4’−ビフェ
ニルテトラカルボン酸ジメチルエステルと4,4’−オ
キシジフタル酸ジメチルエステルのモル比は7:3)を
含有する溶液を得た。この反応溶液を50℃まで冷却し
た後、3,4’−オキシジアニリン160.9g(0.
80mol)を添加し、2時間攪拌溶解し、均一なポリ
イミド前駆体溶液を得た。さらに、シロキサン単位を含
む界面活性剤BYK−302(ビッグケミー・ジャパン
(株)社製、ポリエーテル変成したジメチルポリシロキ
サン)を、得られたポリイミド前駆体溶液の固形分に対
して0.5質量%である2.3gを添加し、25℃にて
系が均一になるまで攪拌溶解することにより、ポリイミ
ド前駆体溶液(黒色)を得た(固形分濃度48質量
%)。この溶液の粘度を測定したところ、20℃で1.
7ポイズであった。さらにこの溶液を実施例1と同様な
条件で、スピンコーターを用いて8インチ−シリコンウ
エハー基板上に塗工した。この際、塗工した液の基板に
対するハジキは発生しなかった。その後、塗工物を窒素
雰囲気下80℃で5時間乾燥した後、窒素雰囲気下30
0℃で5時間加熱イミド化を行い、厚み2μmのポリイ
ミド被膜を得た。このポリイミド被膜にはピンホールは
観察されなかった。さらに、同溶液を、SRaが50n
mであるアルミ基板(直径100mm)に、同様にスピ
ンコートし、熱イミド化を行ない、ポリイミド被膜を得
た。得られたポリイミド被膜は、厚みが2μmで、ピン
ホールは観察されず、さらにSRaは0.5nmであ
り、非常に表面平滑性に優れたものであった。
Example 5 N-methylpyrrolidone as a solvent was added to 500 g of 3,
3 ', 4,4'-biphenyltetracarboxylic acid (BPD
A) 70.9 g (0.24 mol) and 4,4′-
174.5 g of oxydiphthalic acid (ODPA) (0.56
mol), and then 77.13 g of methanol
(0.24 mol) and 3.86 g of triethylamine (the molar ratio between BPDA and ODPA was 7: 3). This solution was subjected to an esterification reaction in a hot water bath at an internal temperature of 80 ° C. for 2 hours with stirring, and 3,3 ′, 4,4′-biphenyltetracarboxylic acid dimethyl ester and 4,4′-oxydiphthalic acid dimethyl ester A solution containing (3,3 ′, 4,4′-biphenyltetracarboxylic acid dimethyl ester and 4,4′-oxydiphthalic acid dimethyl ester in a molar ratio of 7: 3) was obtained. After the reaction solution was cooled to 50 ° C., 160.9 g of 3,4′-oxydianiline (0.
80 mol), and dissolved by stirring for 2 hours to obtain a uniform polyimide precursor solution. Furthermore, a surfactant BYK-302 (manufactured by Big Chemie Japan KK, polyether-modified dimethylpolysiloxane) containing a siloxane unit was added in an amount of 0.5% by mass based on the solid content of the obtained polyimide precursor solution. Was added and stirred and dissolved at 25 ° C. until the system became uniform to obtain a polyimide precursor solution (black) (solid content concentration: 48% by mass). The viscosity of this solution was measured and found to be 1.20 at 20.degree.
It was 7 poise. Further, this solution was applied on an 8-inch silicon wafer substrate using a spin coater under the same conditions as in Example 1. At this time, no repelling of the applied liquid to the substrate occurred. Thereafter, the coated product was dried at 80 ° C. for 5 hours under a nitrogen atmosphere, and then dried under a nitrogen atmosphere for 30 hours.
Heat imidation was performed at 0 ° C. for 5 hours to obtain a 2 μm-thick polyimide film. No pinholes were observed in this polyimide film. Further, the solution was treated with 50 n of SRa.
Similarly, an aluminum substrate (diameter: 100 mm) was spin-coated and thermally imidized to obtain a polyimide film. The obtained polyimide film had a thickness of 2 μm, no pinholes were observed, and SRa was 0.5 nm, which was very excellent in surface smoothness.

【0038】実施例6 溶媒としてのN−メチルピロリドン500gに3,
3’,4,4’−ビフェニルテトラカルボン酸(BPD
A)104.8g(0.36mol)ならびに4,4’
−オキシジフタル酸(ODPA)110.5g(0.3
6mol)を溶解し、次いでメタノール68.37g
(2.13mol)とトリエチルアミン3.42gを添
加した(BPDAとODPAのモル比は5:5)。この
溶液を温水浴にて内温80℃で、攪拌下2時間にてエス
テル化反応させ、3,3’,4,4’−ビフェニルテト
ラカルボン酸ジメチルエステルと4,4’−オキシジフ
タル酸ジメチルエステル(3,3’,4,4’−ビフェ
ニルテトラカルボン酸ジメチルエステルと4,4’−オ
キシジフタル酸ジメチルエステルのモル比は5:5)を
含有する溶液を得た。この反応溶液を50℃まで冷却し
た後、3,4’−オキシジアニリン142.6g(0.
71mol)を添加し、2時間攪拌溶解し、均一なポリ
イミド前駆体溶液を得た。さらに、シロキサン単位を含
む界面活性剤BYK−302を、得られたポリイミド前
駆体溶液の固形分に対して0.5質量%である2.0g
を添加し、25℃にて系が均一になるまで攪拌溶解する
ことにより、ポリイミド前駆体溶液(黒色)を得た(固
形分濃度45質量%)。この溶液の粘度を測定したとこ
ろ、20℃で1.5ポイズであった。さらにこの溶液を
実施例1と同様な条件で、SRaが50nmであるアル
ミ基板(直径100mm)に、同様にスピンコートし、
熱イミド化を行ない、ポリイミド被膜を得た。塗工時に
塗工した液の基板に対するハジキは発生しなかった。得
られたポリイミド被膜は、厚みが2μmで、ピンホール
は観察されず、SRaは0.5nmであり、非常に表面
平滑性に優れたものであった。
Example 6 To 500 g of N-methylpyrrolidone as a solvent,
3 ', 4,4'-biphenyltetracarboxylic acid (BPD
A) 104.8 g (0.36 mol) and 4,4 ′
-Oxydiphthalic acid (ODPA) 110.5 g (0.3
6 mol) and then 68.37 g of methanol
(2.13 mol) and 3.42 g of triethylamine were added (the molar ratio of BPDA to ODPA was 5: 5). This solution was subjected to an esterification reaction in a hot water bath at an internal temperature of 80 ° C. for 2 hours with stirring, and 3,3 ′, 4,4′-biphenyltetracarboxylic acid dimethyl ester and 4,4′-oxydiphthalic acid dimethyl ester A solution containing (3,3 ′, 4,4′-biphenyltetracarboxylic acid dimethyl ester and 4,4′-oxydiphthalic acid dimethyl ester in a molar ratio of 5: 5) was obtained. After the reaction solution was cooled to 50 ° C., 142.6 g of 3,4′-oxydianiline (0.4 g) was added.
(71 mol) and stirred and dissolved for 2 hours to obtain a uniform polyimide precursor solution. Further, a surfactant BYK-302 containing a siloxane unit was added in an amount of 2.0 g, which was 0.5% by mass based on the solid content of the obtained polyimide precursor solution.
Was added and the mixture was stirred and dissolved at 25 ° C. until the system became uniform, thereby obtaining a polyimide precursor solution (black) (solid content concentration: 45% by mass). When the viscosity of this solution was measured, it was 1.5 poise at 20 ° C. Further, this solution was spin-coated on an aluminum substrate (diameter: 100 mm) having an SRa of 50 nm in the same manner as in Example 1,
Thermal imidization was performed to obtain a polyimide coating. No repelling occurred on the substrate of the liquid applied at the time of coating. The obtained polyimide film had a thickness of 2 μm, no pinholes were observed, SRa was 0.5 nm, and was very excellent in surface smoothness.

【0039】比較例1 シリコーンオイルからなる界面活性剤を添加しない以外
は全て実施例1と同様の仕込みと条件で反応を行い、ポ
リイミド前駆体溶液(黒色)を得た(固形分濃度50質
量%)。この溶液の粘度を測定したところ、20℃で2
ポイズであった。さらにこの溶液を実施例1と同様な方
法ならびに条件でSRaが50nmであるアルミ基板
(直径100mm)上にポリイミド被膜を形成させた。
得られたポリイミド被膜の厚みは2μmであったが、塗
工時に塗工した液の基板に対するハジキがあったため
に、ポリイミド被膜にはピンホールが8個観察された。
また、SRaは3nmであった。
Comparative Example 1 A reaction was carried out under the same preparation and conditions as in Example 1 except that no surfactant composed of silicone oil was added, to obtain a polyimide precursor solution (black) (solid content: 50% by mass). ). When the viscosity of this solution was measured,
Poise. Further, using this solution, a polyimide film was formed on an aluminum substrate (diameter 100 mm) having an SRa of 50 nm in the same manner and under the same conditions as in Example 1.
Although the thickness of the obtained polyimide film was 2 μm, eight pinholes were observed in the polyimide film due to repelling of the liquid applied at the time of application to the substrate.
Further, SRa was 3 nm.

【0040】比較例2 実施例1の界面活性剤であるBYK−302の添加量
を、ポリイミド前駆体溶液の固形分に対して7%(35
g)にする以外は全て実施例1と同様の仕込みと条件で
反応を行い、ポリイミド前駆体溶液(黒色)を得た(固
形分濃度50質量%)。この溶液の粘度を測定したとこ
ろ、20℃、1.5ポイズであった。さらにこの溶液を
実施例1と同様な方法ならびに条件で4インチ−シリコ
ンウエハ基板上にポリイミド被膜を形成させた。得られ
たポリイミド被膜はクラックや割れが発生し、均一な被
膜を得ることができなかった。
Comparative Example 2 The amount of the surfactant BYK-302 used in Example 1 was 7% (35%) based on the solid content of the polyimide precursor solution.
The reaction was carried out under the same preparation and conditions as in Example 1 except for changing to g) to obtain a polyimide precursor solution (black) (solid content concentration: 50% by mass). When the viscosity of this solution was measured, it was 20 ° C. and 1.5 poise. Further, this solution was used to form a polyimide film on a 4-inch silicon wafer substrate in the same manner and under the same conditions as in Example 1. Cracks and cracks occurred in the obtained polyimide coating, and a uniform coating could not be obtained.

【0041】比較例3 溶媒としてのN−メチルピロリドン392.093gに
3,3’,4,4’−ビフェニルテトラカルボン酸二無
水物100g(339.88mmol)を溶解し、室温
に保った。次いで前記溶液に3,4’−オキシジアニリ
ン68.04g(339.88mmol)を2時間にわ
たり徐々に添加し、さらに6時間攪拌を続けたところ、
溶液はゲル化した。(固形分濃度30質量%)
Comparative Example 3 100 g (339.88 mmol) of 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride was dissolved in 392.093 g of N-methylpyrrolidone as a solvent and kept at room temperature. Next, 68.04 g (339.88 mmol) of 3,4′-oxydianiline was gradually added to the solution over 2 hours, and stirring was further continued for 6 hours.
The solution gelled. (Solid content concentration 30% by mass)

【0042】[0042]

【発明の効果】以上のように、本発明のポリイミド前駆
体溶液は、溶媒中に溶質であるポリイミド前駆体が高い
固形分比率で含有しても低粘度であり、かつシロキサン
単位を含む界面活性剤を含んでいるので、塗工時に塗工
した液の基板に対するハジキが発生せず、基板表面の状
態に影響されない。したがって、このポリイミド前駆体
溶液からは、膜厚が10μm以下でピンホールがなく、
表面平滑性に優れたポリイミド被膜を生産性よく製造す
ることができる。
As described above, the polyimide precursor solution of the present invention has a low viscosity even if the solute polyimide precursor is contained in the solvent at a high solid content ratio, and has a surface active property containing siloxane units. Since the composition contains an agent, repelling of the liquid applied at the time of coating does not occur on the substrate, and the state of the surface of the substrate is not affected. Therefore, from this polyimide precursor solution, there is no pinhole at a film thickness of 10 μm or less,
A polyimide film having excellent surface smoothness can be manufactured with high productivity.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 今村 茂樹 京都府宇治市宇治小桜23番地 ユニチカ株 式会社中央研究所内 (72)発明者 奥井 文子 京都府宇治市宇治小桜23番地 ユニチカ株 式会社中央研究所内 Fターム(参考) 4F071 AA60 AA60B AA67 AB07B AB08B AB09B AB28B AB29B AC16 AE10 AF27 AH12 BA02 BB02 BC01 BC02 BC12 4J002 CM041 CP032 EX036 FD312 FD316 GH00 GQ01 HA05 4J038 DJ031 DL042 KA09 LA03 LA06 MA06 MA09 MA14 NA01 NA14 NA21 PA19 PB09 PC02 PC03 PC08  ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Shigeki Imamura 23 Uji Kozakura, Uji City, Kyoto Prefecture Unitika Central Research Laboratory (72) Inventor Fumiko Okui 23 Uji Kozakura, Uji City, Kyoto Unitika Central Research Center In-house F-term (reference) 4F071 AA60 AA60B AA67 AB07B AB08B AB09B AB28B AB29B AC16 AE10 AF27 AH12 BA02 BB02 BC01 BC02 BC12 4J002 CM041 CP032 EX036 FD312 FD316 GH00 GQ01 HA05 4J038 DJ03 NA03 MA03 MA03

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 下記式(1)に示す3,4’−オキシジ
アニリンと、下記式(2)に示す3,3’,4,4’−
ビフェニルテトラカルボン酸及び/又はその誘導体なら
びに下記式(3)に示す4,4’−オキシジフタル酸及
び/又はその誘導体とからなる塩が溶質として有機溶媒
中に溶解しており、前記式(2)に示す3,3’,4,
4’−ビフェニルテトラカルボン酸及び/又はその誘導
体と式(3)に示す4,4’−オキシジフタル酸及び/
又はその誘導体とのモル比が0:100〜90:10で
あり、かつ溶質としての塩100質量部に対して下記式
(4)に示すシロキサン単位を含む界面活性剤を0.0
01〜5質量部含有していることを特徴とするポリイミ
ド前駆体溶液。 【化1】 (式中R,R1 ,R2 ,R3 はそれぞれ独立に水素原子
及び炭素数1〜5のアルキル基から選ばれ、R4 ,R5
はそれぞれ独立に水素原子、炭素数1〜5のアルキル
基、アルコキシ基及びフェニル基から選ばれる。)
1. A 3,4′-oxydianiline represented by the following formula (1) and 3,3 ′, 4,4′- represented by the following formula (2):
A salt comprising biphenyltetracarboxylic acid and / or a derivative thereof and 4,4′-oxydiphthalic acid and / or a derivative thereof represented by the following formula (3) is dissolved in an organic solvent as a solute; 3,3 ', 4 shown in
4′-biphenyltetracarboxylic acid and / or a derivative thereof and 4,4′-oxydiphthalic acid represented by the formula (3) and / or
Or a surfactant having a molar ratio of 0: 100 to 90:10 with a derivative thereof and containing a siloxane unit represented by the following formula (4) per 100 parts by mass of a solute as a solute.
A polyimide precursor solution, which is contained in an amount of from 0.01 to 5 parts by mass. Embedded image (Wherein R, R 1 , R 2 , and R 3 are each independently selected from a hydrogen atom and an alkyl group having 1 to 5 carbon atoms; R 4 , R 5
Is independently selected from a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, an alkoxy group and a phenyl group. )
【請求項2】 溶質としての塩の濃度が30〜80質量
%であり、かつ溶液粘度が10ポイズ以下であることを
特徴とする請求項1記載のポリイミド前駆体溶液。
2. The polyimide precursor solution according to claim 1, wherein the concentration of the salt as a solute is 30 to 80% by mass and the solution viscosity is 10 poise or less.
【請求項3】 請求項1又は2に記載のポリイミド前駆
体溶液を基板上に塗工し、加熱イミド化して得られる厚
みが10μm以下であることを特徴とするポリイミド被
膜。
3. A polyimide film having a thickness of 10 μm or less obtained by applying the polyimide precursor solution according to claim 1 or 2 on a substrate and heat imidization.
JP2000121340A 2000-04-21 2000-04-21 Polyimide precursor solution and polyamide coating film obtainable therefrom Pending JP2001302913A (en)

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