JP2001093667A - Organic light-emitting element, device and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a device and method of manufacturing an organic light- emitting element, capable of forming an evaporation layer on a substrate without displacement of the position of forming a film at a high speed, keeping the thickness of the film even and keeping the area of forming the film even, to be miniaturized and manufactured at a low cost. SOLUTION: A screen board 12 is mounted in a chamber 11 to divide the upper space and the lower space, and an oblong evaporation window 13 is formed in the screen board 12. An evaporation source 16 is disposed opposite to the evaporation window 13 under the screen board 12. A moving mechanism 17, for moving a substrate 1 relative to the evaporation window 13, is mounted on the screen board 12. A metal mask 20, as necessary, is mounted under the substrate 1 adjacent to the substrate 1.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light-emitting device such as an organic electroluminescence device having a light-emitting layer made of an organic material, an apparatus for manufacturing the same, and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, with the diversification of information equipment, there has been an increasing demand for a flat display element which consumes less power and has a smaller capacity than a generally used CRT (cathode ray tube). As one of such flat display elements, an electroluminescence element (hereinafter, referred to as an EL element) has attracted attention. Such EL elements are roughly classified into an inorganic EL element having a light emitting layer made of an inorganic material and an organic EL element having a light emitting layer made of an organic material.

In general, an inorganic EL element applies a high electric field to a light emitting portion and accelerates electrons in the high electric field to collide with a light emitting center, thereby exciting the light emitting center to emit light. On the other hand, the organic EL element injects electrons and holes into the light emitting portion from the electron injection electrode and the hole injection electrode, respectively, and recombines these electrons and holes at the emission center to bring the organic molecules into an excited state. It generates fluorescence when the organic molecule returns from the excited state to the ground state. Such an organic EL element has a structure in which a plurality of light emitting elements are arranged in a matrix on a substrate.

An inorganic EL element requires a high electric field and therefore requires a high driving voltage of 100 V to 200 V, whereas an organic EL element can be driven at a low voltage of about 5 V to 20 V. Having.

Further, in the organic EL device, a light emitting device which emits light of an appropriate color can be obtained by selecting a fluorescent material which is a light emitting material, and is expected to be used as a multi-color or full-color display device. You. Further, since the organic EL element can emit light at low voltage, it can be used as a backlight for a display device such as a liquid crystal display device.

In order to use such an organic EL element as a display device, it is essential to provide a light emitting element on a substrate with high integration, high resolution, and full color.

Heretofore, in order to achieve higher integration and higher resolution of the organic EL element, a partition separation technique called "rib stand" has been introduced which can achieve integration by reducing the interval between light emitting elements on a substrate. .

FIGS. 9 and 10 are process sectional views showing a method for manufacturing an organic EL device. On a substrate 31 such as a glass substrate shown in FIG. 9A, as shown in FIG.
A hole injection electrode 32 is formed by forming a transparent conductive film made of (indium tin oxide) and patterning the transparent conductive film.

Next, as shown in FIG.
On top and on the patterned hole injection electrode 32,
A first insulating layer 33 is formed. Next, as shown in FIG. 9D, the first insulating layer 3 is formed on the first insulating layer 33.
The second insulating layer 34 having a larger thickness than that of No. 3 is formed as a rib. Thereby, a high step is formed.

Next, as shown in FIG. 10E, a hole injection electrode 32, a first insulating layer 33 and a second insulating layer 3 are formed.
Organic light emitting layer 3 made of an organic light emitting material by vapor deposition on 4
5 is formed. Further, as shown in FIG. 10F, an electron injection electrode 36 is formed on the organic light emitting layer 35. Thus, a plurality of light emitting elements are formed on the substrate 31.

In this case, since the second insulating layer 34 has a sufficiently large thickness as compared with the organic light emitting layer 35 and the electron injection electrode 36, the organic light emitting layer 35 and the electron Disconnection (step disconnection) of the injection electrode 36 occurs, and separation between the light emitting elements becomes possible.

[0012] Finally, as shown in FIG. 10 (g), the plurality of light emitting elements formed on the substrate 31 are sealed with a sealant 37.

In the case of a single-color organic EL element, the first insulating layer 33 and the second insulating layer
A plurality of light emitting elements on one can be separated.

However, in order to achieve full color, it is necessary to form different light emitting elements for emitting red, green and blue light on a substrate. In this case, it is necessary to deposit different organic light emitting materials on adjacent light emitting elements. Therefore, it is necessary to separately apply the organic light-emitting material using a metal mask together with the above-described partition wall separation technique.

[0015]

FIG. 11 is a schematic sectional view showing a conventional organic light emitting device manufacturing apparatus. The manufacturing apparatus of FIG. 11 is used, for example, for vapor deposition of an organic light emitting layer of an organic EL element.

In FIG. 11, a substrate 31 is disposed in a chamber 101, and a deposition source 10 is provided below a central portion of the substrate 31.
2 are arranged. The evaporation source 102 includes an evaporation material and a heating holder for heating the evaporation material. In FIG. 11, the evaporation source 102 is moved to a position P close to the substrate 31.
1 and the case where the vapor deposition source 102 is disposed at a position P2 remote from the substrate 31.

The evaporation material scatters isotropically from the evaporation source 102 about the center line L1 of the evaporation source 102. When the deposition source 102 is arranged at a position P1 close to the substrate 31,
The film forming speed on the substrate 31 increases. However, the distance from the deposition source 102 to the center of the substrate 31 and the deposition source 10
Since the difference from the distance from 2 to the end of the substrate 31 is large,
The thickness of the organic light emitting layer formed on the substrate 31 tends to vary. That is, the film thickness uniformity in the substrate 31 may be reduced.

On the other hand, when the vapor deposition source 102 is disposed at a position P2 remote from the substrate 31, the difference between the distance from the vapor deposition source 102 to the substrate 31 and the distance from the vapor deposition source 102 to the edge of the substrate 31 becomes small. In addition, uniformity of the thickness of the organic light emitting layer formed on the substrate 31 is ensured to some extent. However, since the distance from the evaporation source 102 to the substrate 31 is long, the film forming speed on the substrate 31 is reduced. As a result, throughput decreases during mass production, and equipment costs increase as the size of the manufacturing apparatus increases.

FIG. 12 is a diagram showing the positional relationship between the evaporation source, the substrate and the metal mask when the organic light emitting materials are separately applied in a full-color organic EL element.

As shown in FIG. 12, when the organic light-emitting materials are separately applied, the metal mask 20 is provided near the substrate 31. The metal mask 20 has an opening having a width W.

In the vicinity of the central portion of the substrate 31, the evaporation source 102
The evaporation material scattered from the metal mask 20 enters the substrate 31 almost perpendicularly through the opening of the metal mask 20, so that the evaporation material is evaporated almost at the position corresponding to the opening of the metal mask 20, and the width W1 of the evaporated area Is a metal mask 2
0 is almost equal to the width W of the opening. On the other hand, at the end of the substrate 31, the evaporation material scattered from the evaporation source 102 enters the substrate 31 obliquely through the opening of the metal mask 20. While being deposited at a position shifted from the part,
The width W2 of the region to be deposited is smaller than the width W of the opening of the metal mask 20. As described above, the film formation position is shifted depending on the location of the substrate 31, and the film formation area is varied.

In particular, in order to achieve high integration and high resolution of the organic EL device, it is necessary to deposit an organic light emitting layer having a predetermined area at a predetermined position on the patterned hole injection electrode with high precision.

When an evaporation source having the same area as the substrate is used, it is possible to uniformly deposit the organic luminescent material on a large-area substrate in a short time. However, in this case, the manufacturing apparatus increases in size, and the cost increases due to the large consumption of the evaporation material.

An object of the present invention is to form a vapor-deposited layer on a substrate at a high film-forming speed at a high film-forming speed without causing a shift in a film-forming position and a variation in a film-forming area. It is an object of the present invention to provide an apparatus and a method for manufacturing an organic light-emitting device which can be manufactured at low cost.

Another object of the present invention is to provide an inexpensive organic light emitting device which can achieve high integration and high resolution and can be colored.

[0026]

The apparatus for manufacturing an organic light emitting device according to the present invention comprises at least an organic light emitting device in which a first electrode, an organic material layer, and a second electrode are laminated on a substrate. A manufacturing apparatus for forming an organic material layer by an evaporation method, wherein an evaporation source is disposed at a position facing the opening on one surface side of the shielding member having the opening,
On the other side of the shielding member, a moving mechanism for moving the substrate in a first direction relative to the opening is provided.

In the manufacturing apparatus according to the present invention, while the vapor deposition material scattered from the vapor deposition source is vapor-deposited on the substrate through the opening of the shielding member, the substrate is moved in the first direction relative to the opening by the moving mechanism. The movement forms an evaporation layer over a large area on the substrate.

In this case, the vapor deposition material scattered from the vapor deposition source is incident on the substrate almost perpendicularly through the opening of the shielding member. Therefore, even when the vapor deposition source is arranged at a position close to the substrate, a uniform film thickness is formed on the substrate. An evaporation layer can be formed. Therefore, the deposition rate can be improved by bringing the deposition source closer to the substrate, and high throughput can be achieved by shortening the deposition time.

Further, even when a mask is set on the substrate,
Since the evaporation material scattered from the evaporation source is incident on the mask almost perpendicularly through the opening of the shielding member, there is no shift in the deposition position and no variation in the deposition area.

Further, since the evaporation source can be brought close to the substrate, the size of the apparatus can be reduced. Further, since there is no need to use a large-area deposition source, cost reduction can be achieved.

The moving mechanism may move the substrate relatively to the opening by moving the substrate, or move the substrate relatively to the opening by moving the shielding member. May be.

The vapor deposition source preferably has a width in a second direction orthogonal to the first direction that is equal to or greater than the width of the vapor deposition region on the substrate. In this case, the evaporation material scattered from the evaporation source is incident almost perpendicularly over the entire width direction of the evaporation region on the substrate. Therefore, by moving the substrate in the first direction relative to the opening of the shielding member, it becomes possible to form a vapor deposition layer having a uniform film thickness over the entire vapor deposition region on the substrate.

[0033] The evaporation source may be integrally provided in a region having a width greater than the width of the evaporation region on the substrate in the second direction. In this case, the evaporation material scattered from a single evaporation source can be incident substantially perpendicularly over the entire width direction of the evaporation region on the substrate. Thus, a deposition layer having a uniform film thickness can be formed over the entire deposition region on the substrate.

The vapor deposition sources may be dispersedly provided in a region having a width greater than the width of the vapor deposition region on the substrate in the second direction. In this case, the evaporation material scattered from the plurality of evaporation sources can be incident almost vertically over the entire width of the evaporation region on the substrate. Thus, a deposition layer having a uniform film thickness can be formed over the entire deposition region on the substrate.

The opening of the shielding member may have a width in the second direction orthogonal to the first direction that is equal to or greater than the width of the deposition region on the substrate. In this case, the evaporation material scattered from the evaporation source can enter the region having the same width as the evaporation region on the substrate or a width larger than the evaporation region through the opening of the shielding member. Therefore, by moving the substrate in the first direction relative to the opening of the shielding member, a vapor deposition layer can be efficiently formed over the entire vapor deposition region on the substrate.

The method for manufacturing an organic light emitting device according to the present invention comprises:
A manufacturing method for forming at least an organic material layer of an organic light-emitting element in which a first electrode, an organic material layer, and a second electrode are stacked on a substrate by an evaporation method, wherein one surface of a shielding member having an opening is provided. The substrate is moved in the first direction relative to the opening on the other surface side of the shielding member while evaporating the evaporation material from the evaporation source disposed at a position facing the opening on the side. A vapor deposition layer is formed thereon.

According to the manufacturing method of the present invention, the substrate moves in the first direction relatively to the opening while the evaporation material scattered from the evaporation source is deposited on the substrate through the opening of the shielding member. Thereby, a vapor deposition layer is formed over a large area on the substrate.

In this case, since the vapor deposition material scattered from the vapor deposition source enters the substrate almost perpendicularly through the opening of the shielding member, even when the vapor deposition source is arranged at a position close to the substrate, a uniform film thickness is formed on the substrate. An evaporation layer can be formed. Therefore, the deposition rate can be improved by bringing the deposition source closer to the substrate, and high throughput can be achieved by shortening the deposition time.

Even when a mask is set on the substrate,
Since the evaporation material scattered from the evaporation source is incident on the mask almost perpendicularly through the opening of the shielding member, there is no shift in the deposition position and no variation in the deposition area.

Further, since the evaporation source can be brought close to the substrate, the size of the manufacturing apparatus can be reduced. In addition, since it is not necessary to use a deposition source having a large area,
Cost reduction can be achieved.

The substrate may be moved relatively to the opening by moving the substrate, or the substrate may be moved relatively to the opening by moving the shielding member. .

It is preferable that the width of the evaporation source in the second direction orthogonal to the first direction is set to be equal to or larger than the width of the evaporation region on the substrate. In this case, the evaporation material scattered from the evaporation source is incident almost perpendicularly over the entire width direction of the evaporation region on the substrate. Therefore, by moving the substrate in the first direction relative to the opening of the shielding member, it becomes possible to form a vapor deposition layer having a uniform film thickness over the entire vapor deposition region on the substrate.

The width of the opening of the shielding member in the second direction orthogonal to the first direction may be set to be equal to or larger than the width of the deposition region on the substrate. In this case, the evaporation material scattered from the evaporation source can enter the region having the same width as the evaporation region on the substrate or a width larger than the evaporation region through the opening of the shielding member. Therefore, by moving the substrate in the first direction relative to the opening of the shielding member, it is possible to efficiently form a vapor deposition layer over the entire vapor deposition region on the substrate.

In the organic light-emitting device according to the present invention, a first electrode, an organic material layer, and a second electrode are laminated on a substrate, and the organic material layer is formed on an opening on one side of a shielding member having the opening. It is formed by moving the substrate relative to the opening on the other surface side of the shielding member while evaporating the evaporation material from the evaporation source disposed at the position facing the substrate.

In the organic light-emitting device according to the present invention, when the organic material layer is formed, the vapor deposition material scattered from the vapor deposition source is vapor-deposited on the substrate through the opening of the shielding member, and the substrate is placed in the opening of the shielding member. By moving relatively, the organic material layer is formed on the first electrode on the substrate.

In this case, the evaporation material scattered from the evaporation source is incident on the substrate almost perpendicularly through the opening of the shielding member. Therefore, even when the evaporation source is arranged at a position close to the substrate, the first electrode on the substrate can be used. An organic material layer having a uniform thickness can be formed. Therefore, the deposition rate can be improved by bringing the deposition source closer to the substrate, and high throughput can be achieved by shortening the deposition time.

Further, even when a mask is provided on the substrate,
Since the evaporation material scattered from the evaporation source is incident on the mask almost perpendicularly through the opening of the shielding member, there is no shift in the deposition position of the organic material layer and no variation in the deposition area.

Further, since the evaporation source can be brought close to the substrate, the manufacturing apparatus can be reduced in size. Also, since there is no need to use a deposition source having a large area,
Cost reduction can be achieved.

Accordingly, a high-integration and high-resolution organic light-emitting device which can be colored can be obtained.

[0050]

FIG. 1 is a schematic sectional view of an apparatus for manufacturing an organic light emitting device according to an embodiment of the present invention, and FIG. 2 is a schematic perspective view of the apparatus for manufacturing an organic light emitting device in FIG. This manufacturing apparatus is, for example, an organic electroluminescent element (hereinafter, referred to as an organic EL).
(Abbreviated as element).

As shown in FIG. 1, a shielding plate 12 is provided in a chamber 11 so as to separate an upper space from a lower space. A rectangular evaporation window 13 is formed in the shielding plate 12. An evaporation source 16 is provided below the shielding plate 12 so as to face the evaporation window 13. The evaporation source 16 includes a rectangular heating holder 14 and a rectangular evaporation material 15.

A moving mechanism 17 for moving the substrate 1 in the direction of the arrow X (hereinafter, referred to as the transport direction X) and the opposite direction is provided on the shielding plate 12. Moving mechanism 17
Is a pair of transport wires 18 and a pair of transport rollers 19
It consists of. The pair of transport wires 18 are bridged between the pair of transport rollers 19. The substrate 1 is attached to a pair of transport wires 18.

A metal mask 20 is attached to the lower surface of the substrate 1 as required so as to be close to the substrate 1. The inside of the chamber 11 is evacuated to a vacuum by an exhaust system (not shown).

The vapor deposition window 1 in a direction parallel to the transport direction X
The length A and the length C of the deposition material 15 of the deposition source 16 are arbitrary. In this embodiment, the length A of the vapor deposition window 13 and the length C of the vapor deposition material 15 are set equal.

As shown in FIG. 2, the width B of the vapor deposition window 13 in the direction orthogonal to the transport direction X is set to be equal to or larger than the width E of the substrate 1. Further, the width D of the deposition material 15 of the deposition source 16 in the direction orthogonal to the transport direction X is also equal to the width E of the substrate 1.
It is set above.

In this embodiment, the length A of the vapor deposition window 13 is 5c.
m and the width B is 30 cm. The length C of the deposition material 15 of the deposition source 16 is 5 cm, and the width D is 30 cm.
It is. The distance between the substrate 1 and the deposition source 16 is, for example, 20
cm.

In the manufacturing apparatus of this embodiment, the evaporation source 1
The vapor deposition material scattered from 6 is vapor-deposited on the substrate 1 through the vapor deposition window 13 of the shielding plate 12, and the substrate 1 is transported in the transport direction X by the moving mechanism 17, so that a vapor deposition layer is formed over a large area of the substrate 1. .

In this case, the evaporation material scattered from the evaporation source 16 is incident on the substrate 1 almost perpendicularly through the evaporation window 13 of the shielding plate 12. Therefore, even if the evaporation source 16 is arranged at a position close to the substrate 1, A vapor deposition layer having a uniform thickness can be formed thereon. Therefore, the deposition rate can be improved by bringing the evaporation source 16 closer to the substrate 1,
High throughput can be achieved by shortening the film formation time.

Even when the metal mask 20 is set on the substrate 1, the deposition material scattered from the deposition source 16 is incident on the metal mask 20 almost perpendicularly through the deposition window 13 of the shielding plate 12, so that the deposition position is shifted. Also, there is no variation in the film formation area.

Further, since the evaporation source 16 can be brought close to the substrate 1, the manufacturing apparatus can be reduced in size. Thereby, the inside of the chamber 11 can be evacuated to a vacuum in a short time, and the manufacturing time is shortened. Also,
Since there is no need to use a large-area deposition source, cost reduction can be achieved.

FIGS. 3, 4 and 5 are process sectional views showing a method for manufacturing an organic EL device according to one embodiment of the present invention.

In FIG. 3A, 300
A mm × 300 mm glass substrate is used. On the substrate 1,
A transparent conductive film made of ITO having a thickness of 0.2 μm is formed by a sputtering method. After that, a resist is applied on the transparent conductive film and prebaked (pre-exposure bake), and then the resist is exposed to a predetermined pattern and developed. After development
Post-baking (baking after development) is performed, and the substrate 1 is immersed in a ferric chloride solution to perform etching. After the etching is completed, the resist is removed. Thus, the hole injection electrode 2 made of the transparent conductive film is formed on the substrate 1.

Next, after cleaning the substrate 1, a resist is applied on the substrate 1 on which the hole injection electrodes 2 are formed, and after pre-baking, the resist is exposed to a predetermined pattern.
Perform development. After the development, post-bake and further 5T
Baking is performed at 200 ° C. for 2 hours in a vacuum of orr to cure and alter the resist. In this way, as shown in FIG. 3B, the insulating layer 3 made of resist is formed on the hole injection electrode 2.

In the present embodiment, baking at 200 ° C. in vacuum is performed for the purpose of curing and alteration of the resist. However, the baking is not limited to this. A method of performing baking in a vacuum atmosphere while performing (all of which are called UV (ultraviolet) cure) may be used. Further, baking may be performed at a temperature of 180 ° C. or more in a nitrogen atmosphere.

Next, a resist is applied to the surfaces of the insulating layer 3 and the hole injection electrode 2 and prebaked, and then the resist is exposed to a predetermined pattern and developed. Thereby, as shown in FIG. 3C, a partition wall separation layer 4 made of a resist is formed on the insulating layer 3.

In this case, a reverse-tapered resist is used in order to cause a step in the hole injection layer, hole transport layer, electron transport layer, electron injection electrode, and protective film to be formed in a later step. Is made larger than the total thickness of the hole injection layer, the hole transport layer, the electron transport layer, the electron injection electrode, and the protective film. Thereby, a high step is formed. In this embodiment, the total thickness of the hole injection layer, the hole transport layer, the electron transport layer, the electron injection electrode, and the protective film is about 0.6 μm, and the thickness of the partition wall separation layer 4 is 4 μm.
And

Next, the substrate 1 on which the partition wall separation layer 4 is formed is attached to the transport wire 18 of the manufacturing apparatus shown in FIGS. 1 and 2, and a hole injection material as the vapor deposition material 15 of the vapor deposition source 16 is set on the heating holder 14. . As a hole injection material,
CuPc (copper phthalocyanine: Copper (II) phthalocyani
ne). After evacuating the chamber 11 to a predetermined degree of vacuum, a hole injection material is vapor-deposited on the substrate 1 from the vapor deposition source 16 while the substrate 1 is transported in the transport direction X by the moving mechanism 17, as shown in FIG. Next, a hole injection layer 5 is formed on the hole injection electrode 2, the insulating layer 3, and the partition wall separation layer 4.

Next, the evaporation material 15 of the evaporation source 16 is exchanged for a hole transport material. NP as hole transport material
B (N, N'-Di (naphthalene-1-yl) -N, N'-Di (phenyl-benzi
dine)). After the inside of the chamber 11 is evacuated to a predetermined degree of vacuum, a hole transport material is vapor-deposited on the substrate 1 from the vapor deposition source 16 while the substrate 1 is transported in the transport direction X by the moving mechanism 17, as shown in FIG. Next, a hole transport layer 6 is formed on the hole injection layer 5.

After that, the substrate 1 is taken out of the manufacturing apparatus,
As shown in FIG. 4E, the first metal mask 20a is positioned and installed on the substrate 1. First metal mask 2
0a has an opening at a position corresponding to the region of the red light emitting element. The substrate 1 on which the first metal mask 20a is installed is attached to the transport wires 18 of the manufacturing apparatus.

Further, the evaporation material 15 of the evaporation source 16 is replaced with an electron transporting material to which a red light emitting material has been added. In this example, Alq ₃ (Tris (8-quinolinolato) aluminum) is used as a host (electron transporting material), and a red emitting laser dye A
D688 doped at 5 wt% is used.

After the inside of the chamber 11 is evacuated to a predetermined degree of vacuum, the electron transport material is transferred from the evaporation source 16 to the first metal mask 2 while the substrate 1 is transported in the transport direction X by the moving mechanism 17.
An electron transporting layer 7a that emits red light is formed on the hole transporting layer 6 by vapor deposition on the substrate 1 via Oa.

Subsequently, the substrate 1 is taken out of the manufacturing apparatus,
As shown in FIG. 4F, a second metal mask 20b is positioned and installed on the substrate 1 instead of the first metal mask 20a. The second metal mask 20b has an opening at a position corresponding to the region of the blue light emitting element. The substrate 1 on which the second metal mask 20b is installed is attached to the transport wires 18 of the manufacturing apparatus.

Further, the vapor deposition material 15 of the vapor deposition source 16 is replaced with an electron transport material to which a blue light emitting material has been added. In this example, Balq ((1,1'-bisphenyl)-(4-olato) bis (2-methy
l-8-quinolinolate-N1, O8) Alminum) as a host (electron transporting material), and 2.5 g of perylene, which is a blue-emitting fluorescent dye,
A material doped with wt% is used.

After the inside of the chamber 11 is evacuated to a predetermined degree of vacuum, the electron transport material is transferred from the evaporation source 16 to the second metal mask 2 while the substrate 1 is transported in the transport direction X by the moving mechanism 17.
On the hole transport layer 6, an electron transport layer 7b that emits blue light is formed by vapor deposition on the substrate 1 through the Ob.

Subsequently, the substrate 1 is taken out of the manufacturing apparatus,
As shown in FIG. 4G, a third metal mask 20c is positioned and installed on the substrate 1 instead of the second metal mask 20b. The third metal mask 20c has an opening at a position corresponding to the region of the green light emitting element. The substrate 1 on which the third metal mask 20c is installed is attached to the transport wires 18 of the manufacturing apparatus.

Further, the vapor deposition material 15 of the vapor deposition source 16 is replaced with an electron transport material to which a green light emitting material has been added. In this example, Alq ₃ which is a green light emitting material is used as the electron transporting material.

After the inside of the chamber 11 is evacuated to a predetermined degree of vacuum, the electron transport material is transferred from the evaporation source 16 to the third metal mask 2 while the substrate 1 is transported in the transport direction X by the moving mechanism 17.
An electron transport layer 7c that emits green light is formed on the hole transport layer 6 by vapor deposition on the substrate 1 through the hole transport layer 0c.

Thereafter, the third metal mask 2 is removed from the substrate 1.
Oc is removed, and the deposition material 15 of the deposition source 16 is replaced with an electrode material. MgIn is used as an electrode material. After evacuating the chamber 11 to a predetermined degree of vacuum, the moving mechanism 1
The electrode material is vapor-deposited on the substrate 1 from the vapor deposition source 16 while the substrate 1 is transported in the transport direction X by 7, and the electron injection electrode 8 is deposited on the electron transport layers 7 a, 7 b and 7 c as shown in FIG. To form

Further, the evaporation material 15 of the evaporation source 16 is exchanged for the material of the protection film, and the protection film 9 is formed on the electron injection electrode 8. In this example, SiO is used as the protective film 9. Thus, a red light emitting element, a blue light emitting element, and a green light emitting element are formed on the substrate 1.

Finally, as shown in FIG. 5I, a plurality of light emitting elements on the substrate 1 are sealed using a sealing agent 10. In this case, an organic light emitting material such as a hole injecting material, a hole transporting material, and an electron transporting material is likely to contain moisture, and if moisture is contained, light emission intensity is likely to be deteriorated.

Through the above steps, a full-color organic EL in which red, blue and green light emitting elements are arranged on the substrate 1
An L element is manufactured.

Here, the change in the deposition rate of the hole injection material, the hole transport material, and the electron transport material when the distance between the substrate and the deposition source was changed in the manufacturing apparatus of FIGS. 1 and 2 was measured. FIG. 6 shows the measurement results. In this measurement, the length A of the vapor deposition window 13 of the shielding plate 12 in the transport direction X was 5 cm, and the width B in the direction orthogonal to the transport direction X was 3 cm.
0 cm.

As shown in FIG. 6, the deposition rate increases as the distance between the substrate 1 and the deposition source 16 decreases. For example, if the distance between the substrate 1 and the evaporation source 16 is 20
cm, the deposition rate of the hole injection material is 22 ° / sec, the deposition rate of the hole transport material is 55 ° / sec, and the deposition rate of the electron transport material is 76 ° / sec.

Further, in the manufacturing apparatus shown in FIGS. 1 and 2, the change in the deposition rate was measured by changing the length of the deposition window of the shielding plate. FIG. 7 shows the measurement results. In this measurement, the length A of the vapor deposition window 13 of the shielding plate 12 in the transport direction X was 1 cm, 5 c
m and 8 cm, width B in the direction perpendicular to the transport direction X
Was set to 30 cm. Further, a hole injection material was used as the vapor deposition material 15.

As shown in FIG. 7, the deposition rate increases as the length A of the deposition window 13 increases. For example, when the distance between the substrate 1 and the vapor deposition source 16 is set to 20 cm, the vapor deposition rate becomes 7 ° / sec when the length A of the vapor deposition window 13 is 1 cm, and when the length A of the vapor deposition window 13 is 5 cm. The deposition rate was 22 ° / sec, and the length A of the deposition window 13 was
Is 8 cm, the vapor deposition rate is 46 ° / sec.

From the results shown in FIG. 7, the vapor deposition window 13
If the length A is 5 cm, the deposition rate is 22 ° / sec, so that the hole injecting material forms a 100 ° film in about 4.6 seconds. Therefore, in the step of FIG.
In the case of forming the hole injection layer 5 of 0 °, the substrate 1 is about 4.
The transport speed of the substrate 1 by the moving mechanism 17 is set to 11 mm / second so that the substrate 1 moves by 5 cm in 6 seconds.

As described above, the hole injection layer 5, the hole transport layer 6, the electron transport layers 7a, 7b, 7c, the electron injection electrodes 8, and the protective film 9 of the organic EL device are manufactured by using the manufacturing apparatus shown in FIGS. Is formed, a uniform film thickness can be ensured.

The metal masks 20a, 20a
When the electron transport layers 7 a, 7 b, and 7 c are formed by installing the metal masks 20 a and 2 c through the deposition windows 13 of the shielding plate 12, the metal masks 20 a and 2
Since the light is incident almost perpendicularly to 0b and 20c, there is no shift in the film formation position and no variation in the film formation area.

Further, since the deposition source 16 can be brought closer to the substrate 1, the deposition rate of the deposition layer is improved and the deposition time is shortened. Further, since the size of the chamber 11 is reduced, the inside of the chamber 11 can be evacuated in a short time, and the manufacturing time is reduced. As a result, high throughput can be achieved.

Further, since there is no need to use a deposition source having a large area, the cost can be reduced.

Therefore, a high-integration and high-resolution organic EL device can be obtained, and an inexpensive organic EL device capable of full color display can be obtained.

FIG. 8 is a schematic perspective view of an apparatus for manufacturing an organic light emitting device according to another embodiment of the present invention.

In the manufacturing apparatus shown in FIG. 8, a plurality of evaporation sources 16a are arranged below the evaporation window 13 of the shielding plate 12. Each deposition source 16a is composed of a rectangular heating holder 14a and a rectangular deposition material 15a. Multiple evaporation sources 1
6a are dispersedly arranged in a region of the shielding plate 12 facing the vapor deposition window 13. In this embodiment, a plurality of evaporation sources 16
a are arranged along a direction orthogonal to the transport direction X.

In this embodiment, the length C of the region where the plurality of evaporation sources 16a are arranged is set to be equal to the length A of the evaporation window 13. The width D of the region where the plurality of evaporation sources 16a are arranged is set substantially equal to the width B of the evaporation window 13. The configuration of the other parts of the manufacturing apparatus of FIG. 8 is the same as the configuration of the manufacturing apparatus of FIGS.

In the manufacturing apparatus of this embodiment, the vapor deposition material scattered from the plurality of vapor deposition sources 16a is vapor-deposited on the substrate 1 through the vapor deposition window 13 of the shielding plate 12, and the moving mechanism 17 moves the substrate 1 to the vapor deposition window 13. By being transported in the transport direction X, a vapor deposition layer is formed over a large area of the substrate 1.

In this case, since the evaporation material scattered from the plurality of evaporation sources 16a enters the substrate 1 almost vertically through the evaporation window 13 of the shielding plate 12, the plurality of evaporation sources 16a
In this case, a deposition layer having a uniform thickness can be formed on the substrate 1. Therefore, by making the plurality of evaporation sources 16a closer to the substrate, the film formation speed can be improved, and high throughput can be achieved by shortening the film formation time.

Further, even when the metal mask 20 is provided on the substrate 1, the vapor deposition material scattered from the plurality of vapor sources 16a enters the metal mask 20 almost perpendicularly through the vapor deposition window 13 of the shielding plate 12, so that the film deposition position Deviation and a variation in the film formation area do not occur.

Further, since the evaporation source 16a can be brought close to the substrate 1, the manufacturing apparatus can be downsized. Therefore, the chamber can be evacuated to a vacuum in a short time, and the manufacturing time is reduced. Further, since there is no need to use a large-area deposition source, cost reduction can be achieved.

In the above embodiment, the substrate 1 is moved relative to the vapor deposition window 13 by moving the substrate 1 by the moving mechanism 17, but the substrate 1 is moved by moving the shielding plate 12. It may be moved relatively to the vapor deposition window 13.

In the above embodiment, the width B of the vapor deposition window 13 of the shielding plate 12 and the width D of the vapor deposition material 15 of the vapor source 16 are set larger than the width of the substrate 1. In the case of vapor deposition in the region of the part, the vapor deposition window 13 of the shielding plate 12
May be set to be equal to or larger than the width of the deposition region and smaller than the width E of the substrate 1.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of an apparatus for manufacturing an organic light emitting device according to an embodiment of the present invention.

FIG. 2 is a schematic perspective view of the manufacturing apparatus of FIG.

FIG. 3 is a process sectional view illustrating a method for manufacturing an organic EL element using the manufacturing apparatus of FIG.

FIG. 4 is a process sectional view illustrating a method for manufacturing an organic EL element using the manufacturing apparatus of FIG.

FIG. 5 is a process sectional view illustrating a method for manufacturing an organic EL element using the manufacturing apparatus of FIG. 1;

FIG. 6 is a diagram showing a measurement result of a change in a deposition rate of a hole injection material, a hole transport material, and an electron transport material when a distance between a substrate and a deposition source is changed in the manufacturing apparatus of FIG.

FIG. 7 is a diagram showing a measurement result when a change in a deposition rate is measured by changing a length of a deposition window of a shielding plate in the manufacturing apparatus of FIG. 1;

FIG. 8 is a schematic perspective view of an apparatus for manufacturing an organic light emitting device according to another embodiment of the present invention.

FIG. 9 is a process sectional view illustrating the method for manufacturing the organic EL element.

FIG. 10 is a process sectional view illustrating the method for manufacturing the organic EL element.

FIG. 11 is a schematic sectional view showing a conventional apparatus for manufacturing an organic light emitting device.

FIG. 12 is a diagram showing a positional relationship between an evaporation source, a substrate, and a metal mask when an organic light emitting material is separately applied to a full-color organic EL element.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 Hole injection electrode 3 Insulating layer 4 Partition separation layer 5 Hole injection layer 6 Hole transport layer 7a, 7b, 7c Electron transport layer 8 Electron injection electrode 9 Protective film 10 Sealant 11 Chamber 12 Shielding plate 13 Deposition window 14, 14a Heating holder 15, 15a Evaporation material 16, 16a Evaporation source 17 Moving mechanism 18 Transport wire 19 Transport roller 20, 20a, 20b, 20c Metal mask

Claims (9)

[Claims] 1. A manufacturing apparatus for forming at least the organic material layer of an organic light-emitting element in which a first electrode, an organic material layer, and a second electrode are laminated on a substrate by a vapor deposition method, comprising: A movement source for disposing a deposition source at a position facing the opening on one surface side of the shielding member having a first surface, and moving the substrate in a first direction relative to the opening on the other surface side of the shielding member; An apparatus for manufacturing an organic light emitting device, comprising a mechanism. 2. The organic light-emitting device according to claim 1, wherein the deposition source has a width in a second direction orthogonal to the first direction that is equal to or greater than a width of a deposition region on the substrate. manufacturing device. 3. The organic light emitting device according to claim 2, wherein the deposition source is provided integrally with a region having a width equal to or greater than a width of the deposition region on the substrate in the second direction. Manufacturing equipment. 4. The organic light emitting device according to claim 2, wherein the deposition sources are dispersedly provided in a region having a width equal to or greater than a width of the deposition region on the substrate in the second direction. Manufacturing equipment. 5. The opening of the shielding member, wherein
A width in the second direction perpendicular to the direction of the substrate is equal to or greater than the width of the deposition region on the substrate.
5. The apparatus for manufacturing an organic light-emitting device according to any one of 4. 6. A manufacturing method for forming at least the organic material layer of an organic light-emitting element in which a first electrode, an organic material layer, and a second electrode are stacked on a substrate by a vapor deposition method, the method comprising: While evaporating a deposition material from a deposition source arranged at a position facing the opening on one surface side of the shielding member, the substrate is relatively positioned on the other surface side of the shielding member with respect to the opening. A method for manufacturing an organic light-emitting device, comprising forming an evaporation layer on the substrate by moving the substrate in one direction. 7. The organic light emitting device according to claim 6, wherein a width of the vapor deposition source in a second direction orthogonal to the first direction is set to be equal to or larger than a width of a vapor deposition region on the substrate. Manufacturing method. 8. The method according to claim 6, wherein a width of the opening of the shielding member in a second direction orthogonal to the first direction is set to be equal to or larger than a width of a deposition region on the substrate.
Or a method for producing an organic light-emitting device according to item 7. 9. A first electrode, an organic material layer, and a second electrode are stacked on a substrate, and the organic material layer is disposed at a position facing the opening on one surface side of the shielding member having the opening. An organic light-emitting device formed by moving the substrate relative to the opening on the other surface side of the shielding member while evaporating an organic material from a deposited evaporation source.