JP2000251768A - Enclosure and image forming device by using it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an enclosure for an image display device less in brightness reduction or life shortening, high in display quality, and sufficient in getter effect, by realizing an adhesion process at a temperature about 400 deg.C or below required at the minimum for a frit adhesion (sealing) process. SOLUTION: A rear plate 2 and a face plate 4 are joined respectively at joining parts to an outer frame 3 by an adhesive 9 and sealing material 14. The sealing material is selected from metals or alloys, such as In, Al, Cu, Au, Ag, Pt, Ti, Ni or the like, or organic adhesives, inorganic adhesives or the like with surfaces coated with the metal or the alloy. The adhesive is selected from organic adhesives containing a polyphenyl compound, a polybenzimidazole resin, a polyimide resin or the like, inorganic adhesives containing alumina, silica, zirconia or carbon, or the like.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an envelope for joining glass members using a joining material and maintaining the inside of the envelope at a vacuum, and an image forming apparatus using the envelope.

[0002]

2. Description of the Related Art Conventionally, in an envelope capable of maintaining the inside in a vacuum reduced pressure state, a joining material is attached to a joint between a face plate (phosphor substrate), a rear plate (electron emission substrate) and an outer frame. Is a frit (low melting point glass).

[0003] That is, as a joining material, a frit layer is formed on the joining portion and then fired, whereby the joining portion is hermetically sealed and an envelope capable of maintaining the inside in a vacuum is formed. The sealing of the glass using the frit requires firing at about 400 to 500 ° C. in the atmosphere (normal pressure).

In general, in an image forming apparatus using electrons, an envelope for maintaining a vacuum (reduced pressure) atmosphere including a face plate, a rear plate and an outer frame, which are glass members, and an electron source for emitting electrons. And a driving circuit therefor, an image forming member having a phosphor or the like which emits light by collision of electrons, an accelerating electrode for accelerating electrons toward the image forming member, a high-voltage power supply, and the like.

FIG. 18 is a perspective view of an image forming apparatus using an electron-emitting device disclosed in JP-A-8-83578.

FIG. 19 is a sectional view of the image forming apparatus taken along the line BB '. As shown in FIG.
705, a rear plate (electron emitting element substrate) 1
701 and a face plate 1702 are provided with an outer frame 1703
Bonding (or sealing) at the junction with
Have been. In the drawing, 1701 is a rear plate made of soda lime glass, 1702 is a face plate made of soda lime glass, 1703 is an outer frame made of soda lime glass, 1706 is an upper wiring, 1707 is an element electrode (upper wiring side), and 1708 is an electron emitting portion. 1709 is a phosphor, 17
Reference numeral 10 denotes a metal back. The lower wiring and the device electrode (lower wiring side) are not shown.

Further, as disclosed in Japanese Patent Application Laid-Open No. 9-082245, in an image forming apparatus using a flat envelope such as a thin image forming apparatus, a getter is installed to maintain a vacuum. Sometimes.

[0008]

However, in the case where frit bonding (sealing) is used as a joint at the joint of the envelope including the image forming apparatus of the above-mentioned conventional example, about 400 ° C. Since it is necessary to perform sintering in the atmosphere in the above, there are the following problems.

(1) In the frit bonding step, usually, a preliminary firing step is performed, and then a sealing step is performed. This requires two firing steps. In comparison, the temperature is higher and more time is required, resulting in higher power costs.

(2) In an image forming apparatus using a surface conduction electron-emitting device, if frit bonding (sealing) is performed after forming and activating beforehand, the higher the bonding temperature, the higher the thermal characteristics. Deterioration, that is, a decrease in brightness or a shortened life due to a decrease in electron emission current may occur.

(3) In the case where a getter is used, when the temperature is raised to about 400 ° C., oxidation of the getter material or the like proceeds, and the gettering effect may be reduced.

Therefore, the present invention provides frit bonding (sealing).
Realizes the bonding process below about 400 ° C required for the process, lowers the power cost, reduces the brightness and shortens the service life, and further enhances the display quality and the image forming apparatus with sufficient getter effect. It is an object to provide a container and an image forming apparatus provided with the envelope.

[0013]

According to the present invention, there is provided a face plate, a rear plate disposed opposite to the face plate, and a rear plate disposed between the face plate and the rear plate. In an envelope comprising an outer frame surrounding the periphery, a face plate joining portion joining the outer frame and the face plate, and a rear plate joining portion joining the outer frame and the rear plate, the face The plate joint and / or the rear plate joint include a sealing material having a sealing function and an adhesive having an adhesive function.

[0014]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The conditions of the adhesive applicable to the envelope of the present invention are as follows.

1. Heat resistance: baking in vacuum (high vacuum formation)
Heat resistance in the process is required.

2. Sealability is required. That is, it is necessary that high vacuum can be maintained (minimum vacuum leak and minimum gas permeation). However, it suffices that this condition be satisfied only at a place where vacuum maintenance is required.

3. Adhesion with the glass member is required.

4. Low outgassing is required to maintain an initial high vacuum.

5. It is necessary that the maximum heat treatment temperature is lower than about 400 ° C. in the frit bonding (sealing) process.

6. Moldability: It is necessary to easily adapt to an arbitrary outer frame shape and not to be fluidized near the bonding temperature.

Examples of the sealing material having the sealing function of the joint portion satisfying the above conditions include In, Al, Cu, Au, and A.
g, Pt, Ti, Ni or other metal or alloy, and In, Al, Cu, Au, Ag, Pt, Ti, Ni on the surface
Can be selected from materials such as an organic adhesive or an inorganic adhesive coated with a metal or alloy such as, and as the adhesive having an adhesive function, as the adhesive of the present invention, a polymer system having a polyphenyl compound Thermoplastic adhesive,
Examples of the adhesive include an organic adhesive such as an adhesive mainly containing a polybenzimidazole resin, an adhesive mainly containing a polyimide resin, and an inorganic adhesive mainly containing alumina, silica, zirconia, and carbon.

As the sealing material of the present invention, In is used, and as the adhesive, an inorganic adhesive mainly containing zirconia and silica is used as one of the most preferable ones. When an In wire is used as a sealing material, the In wire is formed into an arbitrary shape, heated at 160 ° C. or more to soften the In, press-bonded, and sealed in a temperature decreasing process. The above-mentioned conditions (1) to (6) can be satisfied by applying the above adhesive to the periphery of the sealing material with a dispenser or the like, evaporating water at 100 ° C. or lower, and then bonding at about 150 ° C. It is preferable that a bonding material using an inorganic adhesive containing In and alumina as main components has a particularly low maximum heat treatment temperature as compared with other bonding portions.

Also, a paste-like inorganic adhesive mainly composed of zirconia and silica is molded into an arbitrary shape as a sealing material by a dispenser or the like, and In is formed on the surface of the inorganic adhesive obtained by evaporating water at 100 ° C. or less. After forming a coating film by a known vacuum evaporation method such as EB or sputtering,
After heating at 60 ° C. or more, In is softened, pressed and sealed in a temperature decreasing process, and then a paste adhesive containing alumina as a main component is applied around the sealing material with a dispenser or the like. Is evaporated and then 150
By bonding at about ° C, the above conditions 1 to 6 can be satisfied.

Further, Al is used as the sealing material, and a high molecular thermoplastic organic adhesive mainly containing polyetherketone is used as the adhesive. Al which is a sealing material,
An organic adhesive in the form of a polymer thermoplastic sheet mainly composed of polyetherketone as an adhesive is molded into an arbitrary shape, and the adhesive is softened by heating to 330 ° C. or more, pressure-bonded, and sealed. Then, the adhesive is cured by curing the adhesive in the process of cooling down, thereby satisfying the above conditions.

The joint using at least two members of the above-described sealing material having a sealing function and an adhesive having an adhesive function is a bonding process in which the maximum heat treatment temperature is 400 ° C. or less, so that the power cost is reduced and the brightness is reduced. It is possible to provide an envelope such as an image forming apparatus which is less likely to be deteriorated and shortened in service life, has higher display quality, and has a sufficient getter effect.

Further, in order to improve the adhesion between the joining portion and the glass substrate, the same metal or alloy as the sealing material is previously vacuum-deposited on the joining surface or a coating material containing the same metal or alloy is screen-printed. It is also effective to coat by a known coating method such as dipping, spraying and dispensing.

The envelope of the present invention can be used for an image forming apparatus. Preferably, a phosphor and an electron accelerating electrode are formed on a face plate of the envelope, and an electron source is formed on a rear plate. Used for the formed image forming apparatus. As the electron-emitting device used for this electron source, a surface conduction type electron-emitting device is most preferably used.
The present invention can be preferably applied to an image forming apparatus using a cold cathode such as M or FE and requiring a high vacuum.

Hereinafter, an image forming apparatus using a surface conduction type electron-emitting device, which is most preferably used in the present invention, will be described with reference to the drawings.

FIG. 1 is a perspective view of the image forming apparatus of the present invention. Reference numeral 1 denotes an electron source in which a plurality of electron-emitting devices are arranged on a substrate, and are appropriately wired. 2 is a rear plate, 3 is an outer frame, 4 is a face plate, and 9, 14 are adhesives.

FIG. 2 is a sectional view taken along the line CC 'of FIG. As shown in FIG. 2, the rear plate 2 and the face plate 4 are joined to the outer frame 3 via the polymer thermoplastic joints 9 and 14 having a polyphenyl compound.
Each is joined.

When the outer frame and the face plate or the outer frame and the rear plate are integrated in advance, it goes without saying that the present invention is publicly used for joining the face plate and the rear plate.

The face plate 4 is formed by forming a fluorescent film 7 and a metal back 8 on a glass substrate 6, and this portion becomes an image display area. The fluorescent film 7 is made of only a phosphor in the case of a black-and-white image, but in the case of displaying a color image, pixels are formed by phosphors of three primary colors of red, green and blue, and the pixels are separated by a black member. Structure. The black member is called a black stripe or a black matrix depending on its shape.

The metal back 8 is made of a thin film of Al or the like. The metal back 8 reflects light traveling toward the electron source 1 out of the light emitted from the phosphor toward the glass substrate 6 to improve the brightness, and the gas remaining in the envelope 5 reduces the electron emission. It also serves to prevent the phosphor from being damaged by the impact of ions generated by ionization by the wire. Further, it provides conductivity to the image display area of the face plate 4 to prevent charge from being accumulated, and serves as an anode electrode for the electron source 1.

FIG. 3A shows a case where the phosphors 13 are arranged in a stripe pattern. The phosphors 13 of three primary colors of red (R), green (G), and blue (B) are formed in order. Are separated by the black member 12. In this case, the black member 12
Is called a black stripe.

FIG. 3B shows a state in which the dots of the phosphor 13 are arranged in a grid, and the dots are separated by the black member 12. In this case, the black member 12 is called a black matrix. There are several methods of arranging each color of the phosphor 13, and accordingly, the arrangement of the dots may employ a square lattice or the like in addition to the illustrated triangular lattice.

As a method for patterning the black member 12 and the phosphor 13 on the glass substrate 6, a slurry method, a printing method, or the like can be used. After the fluorescent film 7 is formed, a metal such as Al is further formed to form a metal back 8.

FIG. 4 is a plan view of a two-dimensional electron source connected by matrix wiring.

FIG. 5 is a sectional view taken along the line AA 'of FIG.

Reference numeral 72 denotes an X-direction wiring (upper wiring), and 73 denotes a Y-direction wiring (lower wiring), which are connected to the electron-emitting device 78, respectively. The Y-directional wiring 73 is provided on the insulating base 71, and an insulating layer 74 is further formed thereon, and the X-directional wiring 72 and the electron-emitting device 78 are formed thereon. Are connected via a contact hole 77.

The above-mentioned various wirings are formed by a combination of various thin film deposition methods such as a sputtering method, a vacuum evaporation method, a plating method, and the like, and a photolithography technique, or a printing method. This is preferable because it can be formed over a large area at low cost.

The face plate 4, the outer frame 3, the rear plate 2, and the electron source 1 and other structures are combined, and the outer frame 3, the face plate 4, and the rear plate 2 are joined. Bonding is performed by molding a polymer thermoplastic adhesive having a polyphenyl compound into an arbitrary shape, softening the adhesive by a heat treatment at 400 ° C. or lower in an inert gas such as Ar (inert gas), and pressing. Then, the adhesive is adhered by curing the adhesive in a temperature decreasing process (sealing step). The internal structure such as the electron source 1 is fixed in the same manner. At this time, it is desirable to lower the oxygen concentration and the temperature at the time of bonding as much as possible.

Thereafter, the inside of the envelope 5 is evacuated once, and then a sufficient vacuum is secured inside the envelope 5 by evacuation and heating and degassing (baking step). (Not shown) is heated and closed with a burner to form an airtight container.

The image forming apparatus (airtight container) produced in this manner has a reduced power cost, a reduced luminance and a short life, a high display quality, and a sufficient getter effect.
Since the degree of vacuum in the envelope is favorably maintained, the amount of electrons emitted from the electron-emitting device is stabilized.

FIG. 6 shows that the image forming apparatus described above
FIG. 3 is a block diagram of a drive circuit for performing television display based on a TSC television signal. In FIG.
81 is an image forming apparatus, 82 is a scanning circuit, 83 is a control circuit, and 84 is a shift register. 85 is a line memory, 86 is a synchronization signal separation circuit, 87 is a modulation signal generator,
Vx and Va are DC voltage sources.

The image forming apparatus 81 has terminals Dox1 through Dx
oxm, terminals Doy1 to Doyn, and high voltage terminal Hv
Connected to an external electric circuit via Terminal Dox1
To Doxm for sequentially driving electron sources provided in the image forming apparatus, that is, a group of surface-conduction electron-emitting devices arranged in a matrix of M rows and N columns, one row at a time (N elements). A scanning signal is applied.

To the terminals Doy1 to Doyn, a modulation signal for controlling the output electron beam of each element of the one row of surface conduction electron-emitting devices selected by the scanning signal is applied. The high-voltage terminal Hv is supplied with a DC voltage of, for example, 10 kV from a DC voltage source Va, which applies sufficient energy to an electron beam emitted from the surface conduction electron-emitting device to excite the phosphor. This is the accelerating voltage to perform.

The scanning circuit 82 will be described. This circuit includes M switching elements inside (in the drawing, S1 to Sm are schematically shown). Each switching element selects either the output voltage of the DC voltage source Vx or 0 V (ground level), and is electrically connected to the terminals Dox1 to Doxm of the image forming apparatus 81. Each of the switching elements S1 to Sm operates based on the control signal Tscan output from the control circuit 83, and can be configured by combining switching elements such as FETs, for example.

In the case of the present embodiment, the DC voltage source Vx uses a driving voltage applied to an element that is not scanned based on the characteristics (electron emission threshold voltage) of the surface conduction electron-emitting device. It is set to output a constant voltage that is equal to or lower than the voltage.

The control circuit 83 has a function of matching the operation of each unit so that appropriate display is performed based on an image signal input from the outside. Based on the synchronization signal Tsync sent from the synchronization signal separation circuit 86, the control circuit 83 sends Tscan, Tsft, and Tm to each unit.
ry control signals are generated.

The synchronizing signal separating circuit 86 is a circuit for separating a synchronizing signal component and a luminance signal component from an NTSC television signal input from the outside, and uses a general frequency separating (filter) circuit or the like. Can be configured. The synchronizing signal separated by the synchronizing signal separating circuit 86 is composed of a vertical synchronizing signal and a horizontal synchronizing signal.
This is shown as a SYNC signal. The luminance signal component of the image separated from the television signal is referred to as a DATA signal for convenience. The DATA signal is input to the shift register 84.

The shift register 84 is for serially / parallel converting the DATA signal input serially in time series for each line of an image, and is based on a control signal Tsft sent from the control circuit 83. (Ie, the control signal Tsft is supplied to the shift register 84
It can be said that it is a shift clock. ). The data of one line of the serial / parallel-converted image (corresponding to the drive data of N electron-emitting devices) is converted into N parallel signals Id1 to Idn as the shift register 8.
4 is output.

The line memory 85 is a storage device for storing data for one line of an image for a required time only.
The contents of Id1 to Idn are stored as appropriate according to the control signal Tmry sent from the control circuit 83. The stored contents are output as I'd1 to I'dn and input to the modulation signal generator 87.

The modulation signal generator 87 outputs the image data I'd
1 to I′dn are signal sources for appropriately driving and modulating each of the surface conduction electron-emitting devices in accordance with each of the surface conduction electron-emitting devices in the display panel 81 through terminals Doy1 to Doyn. Applied to the emitting element.

The electron-emitting device to which the present invention can be applied has the following basic characteristics with respect to the emission current Ie. That is, electron emission has a clear threshold voltage Vth, and electron emission occurs only when a voltage equal to or higher than Vth is applied. For a voltage equal to or higher than the electron emission threshold, the emission current also changes according to the change in the voltage applied to the device. For this reason, when a pulsed voltage is applied to this element, for example, even if a voltage equal to or lower than the electron emission threshold is applied, electron emission does not occur.
When a voltage higher than the electron emission threshold is applied, an electron beam is output. At that time, the intensity of the output electron beam can be controlled by changing the pulse peak value Vm. In addition, it is possible to control the total amount of charges of the output electron beam by changing the pulse width Pw.

Therefore, as a method of modulating the electron-emitting device in accordance with the input signal, a voltage modulation method, a pulse width modulation method, or the like can be employed. In implementing the voltage modulation method, a circuit of a voltage modulation method that generates a voltage pulse of a fixed length and modulates the peak value of the pulse appropriately according to input data is used as the modulation signal generator 87. be able to.

When implementing the pulse width modulation method,
As the modulation signal generator 87, a pulse width modulation circuit that generates a voltage pulse having a constant peak value and appropriately modulates the width of the voltage pulse according to input data can be used. Shift register 84 and line memory 85
The digital signal type and the analog signal type can be adopted. This is because the serial / parallel conversion and storage of the image signal may be performed at a predetermined speed.

When the digital signal type is used, it is necessary to convert the output signal DATA of the synchronizing signal separation circuit 86 into a digital signal. For this purpose, an A / D converter may be provided at the output section of the 86. In connection with this, the circuit used for the modulation signal generator 87 differs slightly depending on whether the output signal of the line memory 85 is a digital signal or an analog signal. That is, in the case of the voltage modulation method using a digital signal,
For example, a D / A conversion circuit is used as the modulation signal generator 87, and an amplification circuit and the like are added as necessary. In the case of the pulse width modulation method, the modulation signal generator 87 includes, for example, a high-speed oscillator, a counter for counting the number of waves output from the oscillator, and a comparator for comparing the output value of the counter with the output value of the memory. (Comparator) is used. If necessary, an amplifier for voltage-amplifying the pulse width modulated signal output from the comparator to the drive voltage of the surface conduction electron-emitting device can be added.

In the case of the voltage modulation method using an analog signal, an amplification circuit using, for example, an operational amplifier can be used as the modulation signal generator 87, and a level shift circuit and the like can be added as necessary. In the case of the pulse width modulation method, for example, a voltage-controlled oscillation circuit (VOC) can be employed, and an amplifier for amplifying the voltage up to the drive voltage of the surface conduction electron-emitting device can be added as necessary.

In the image forming apparatus of the present invention which can take such a configuration, each of the electron-emitting devices is provided with an external terminal Do.
By applying a voltage via x1 to Doxm and Doy1 to Doyn, electron emission occurs. High voltage terminal H
A high voltage is applied to the metal back 8 or a transparent electrode (not shown) through the v to accelerate the electron beam. The accelerated electrons collide with the fluorescent film 7 and emit light to form an image.

The configuration of the image forming apparatus described here is an example of an image forming apparatus to which the present invention can be applied, and various modifications can be made based on the technical idea of the present invention. Although the NTSC system has been described as the input signal, the input signal is not limited to the NTSC system, but may be a PAL or SECAM system, or a TV signal (for example, M
A commercial television (TV) system including the USE system can also be adopted. The image forming apparatus of the present invention can be used as an image forming apparatus as an optical printer configured using a photosensitive drum or the like, in addition to a display device of a television broadcast, a display device of a video conference system, a computer, or the like. it can.

[0061]

Hereinafter, the present invention will be described in more detail with reference to preferred embodiments. However, the present invention is not limited to these embodiments, and each element within a range in which the object of the present invention is achieved. This also includes those in which substitutions or design changes have been made.

[Embodiment 1] The image forming apparatus of this embodiment is
It has a configuration similar to that of the device schematically shown in FIG. 1, and reference numeral 1 denotes an electron source, in which a plurality of electron-emitting devices are arranged on a substrate and appropriately wired. 2 is a rear plate, 3 is an outer frame, and 4 is a face plate. As shown in the cross-sectional view taken along the line CC 'of FIG. 1, 9 is an adhesive, 14 is a sealing material, and the rear plate 2 and the face plate 4 are joined at the joints with the outer frame 3, respectively. Have been.

Further, the image forming apparatus of this embodiment has an electron source 1 in which a plurality (240 rows × 720 columns) of surface conduction electron-emitting devices are arranged in a simple matrix on a substrate.

FIG. 7 is a partial plan view of the electron source 1.

FIG. 8 is a sectional view taken along the line BB 'of FIG. 7 and 8, the same reference numerals denote the same components. Here, 101 is an electron source substrate, 102 is an X-direction wiring (also referred to as an upper wiring) corresponding to Doxm in FIG. 1, 103 is a Y-direction wiring (also referred to as a lower wiring) corresponding to Doyn in FIG.
08 is a conductive film including an electron emitting portion, 105 and 106 are device electrodes, 104 is an interlayer insulating layer, and 107 is a device electrode 105.
And a contact hole for electrical connection with the lower wiring 103.

FIG. 9 is a manufacturing process diagram of the image forming apparatus of this embodiment.

Step-a The substrate 1 was sufficiently washed with a detergent, pure water and an organic solvent. A 0.5 μm thick silicon oxide film was formed thereon by a sputtering method to obtain an electron source substrate 1. A photoresist (AZ1370 Hoechst) was spin-coated and baked thereon, and then a photomask image was exposed and developed to form a resist pattern for the lower wiring 103.
Further, by vacuum evaporation, Cr having a thickness of 5 nm and a thickness of 60
After sequentially laminating 0 nm of Au, unnecessary portions of the Au / Cr deposited film were removed by lift-off to form a lower wiring 103 having a desired shape (FIG. 9A).

Step-b Next, an interlayer insulating film 104 made of a silicon oxide film having a thickness of 1.0 μm is deposited by RF sputtering (FIG. 9).
(B)).

Step-c A photoresist pattern for forming the contact hole 107 is formed in the silicon oxide film deposited in the step b, and the interlayer insulating layer 104 is etched using the photoresist pattern as a mask to form the contact hole 107. Etching is performed by RIE (Reactive) using CF ₄ and H ₂ gas.
Ion Etching) method (FIG. 9 (c)).

Step-d A pattern was formed such that a resist was applied to portions other than the contact hole 107, and 5 nm thick Ti and 500 nm thick Au were sequentially deposited by vacuum evaporation. Unnecessary portions were removed by lift-off to bury the contact holes 107 (FIG. 9D).

Step-e Thereafter, a pattern to be a gap G between the device electrode 105 and the device electrode is formed by a photoresist (RD-2000N-41).
Hitachi Chemical Co., Ltd.) and a thickness of 5
nm of Ti and 100 nm of Ni were sequentially deposited. The photoresist pattern was dissolved with an organic solvent, the Ni / Ti deposited film was lifted off, and the device electrodes 105 and 106 were formed with the device electrode gap G of 3 μm and the device electrode width of 300 μm (FIG. 9E).

Step-f After a photoresist pattern of the upper wiring 102 is formed on the device electrodes 105 and 106, Ti having a thickness of 5 nm and a thickness of 5
00 nm of Au is sequentially deposited by vacuum evaporation, unnecessary portions are removed by lift-off, and a width 40 of a desired shape is obtained.
The upper wiring 102 of 0 μm was formed (FIG. 9F).

Step-g A 100 nm-thick Cr film 1019 is deposited and patterned by vacuum evaporation, and a Pd amine complex solution (c
cp4230 manufactured by Okuno Pharmaceutical Co., Ltd.) was spin-coated with a spinner and heated and baked at 300 ° C. for 10 minutes.
Further, the thus formed conductive film 108 for forming an electron emitting portion composed of fine particles composed of Pd as a main element has a thickness of 8.5 nm and a sheet resistance value of 3.9 × 10 ⁴ Ω / □.
Met. Note that the fine particle film described here is a film in which a plurality of fine particles are aggregated, and has a fine structure not only in a state where the fine particles are individually dispersed and arranged, but also in a state where the fine particles are adjacent to each other or overlapped (including an island shape). ), And the particle size refers to the diameter of the fine particles whose particle shape can be recognized in the above state (FIG. 9 (g)).

Step-h A desired pattern was formed by etching the Cr film 1019 and the conductive film 108 for forming the electron-emitting portion after firing with an acid etchant (FIG. 9 (h)). Through the above steps, a plurality of (240 rows × 720 columns) conductive films 108 for forming electron-emitting portions are connected to the simple matrix including the upper wiring 102 and the lower wiring 103 on the electron source substrate 101. .

Step-i Next, the face plate 4 shown in FIG. 1 was prepared as follows. The glass substrate 6 was sufficiently washed using a detergent, pure water and an organic solvent. On top of this, I
A transparent electrode 1011 was formed by depositing 0.1 μm of TO. Subsequently, a phosphor film 7 was applied by a printing method, and the surface was smoothed (generally called “filming”) to form a phosphor portion. The fluorescent film 7 is a fluorescent film shown in FIG. 6A in which stripe-shaped phosphors (R, G, B) 13 and black members (black stripes) 12 are alternately arranged. Further, a metal back 8 made of an Al thin film was formed on the fluorescent film 7 to a thickness of 0.1 μm by a sputtering method.

Step-j Next, the envelope 5 shown in FIG. 1 was prepared as follows.

After fixing the electron source 1 formed by the above-described process to the rear plate 2, the outer frame 3, the face plate 4, and the electron source 1 are combined to form the lower wiring 103 and the upper wiring 102 of the electron source 1. The envelope 5 was formed by connecting to the row selection terminal 10 and the signal input terminal 11, strictly adjusting the positions of the electron source 1 and the face plate 4, and bonding them.

For bonding, the In wire is used as the sealing material 14, the In wire is molded into an arbitrary shape, and the In is softened by heating at 160 ° C. or higher, pressure-bonded, and sealed in the temperature decreasing process. A paste adhesive containing zirconia and silica as main components: Three Bond Co., Ltd. Product name 3715 is applied to the periphery of the sealing material in a shape of an outer frame with a dispenser, and water is evaporated at 100 ° C. or less, and then 150 ° C. Adhesion was performed to the extent. The internal structure such as the electron source 1 is fixed in the same manner. When the rear plate 2 and the face plate 4 were arranged, a ring-shaped getter 16 of an evaporative getter containing Ba as a main component was simultaneously arranged outside the image display area.

FIG. 10 is a conceptual diagram of a vacuum device used in the subsequent steps.

The image forming apparatus 121 is connected to a vacuum vessel 123 via an exhaust pipe 122, and the vacuum vessel 123 is connected to an exhaust device 125, and a gate valve 124 is provided therebetween. In the vacuum container 123,
Pressure gauge 126, quadrupole mass analyzer (Q-mass) 12
7 is attached so that the internal pressure and each partial pressure of the residual gas can be monitored. Since it is difficult to directly measure the pressure and the partial pressure in the envelope 5, the pressure and the partial pressure of the vacuum vessel 123 are measured, and these values are regarded as those in the envelope 5. The exhaust device 125 is an ultra-high vacuum exhaust device including a sorption pump and an ion pump. A plurality of gas introduction devices are connected to the vacuum container 123,
The substance stored in the substance source 129 can be introduced. The introduced substance is filled in a cylinder or an ampoule according to the type, and the introduced amount can be controlled by the gas introduced amount control means 128. The gas introduction amount control means 128
Depending on the type of introduced substance, flow rate, required control accuracy, etc.,
Needle valves, mass flow controllers and the like are used. In this embodiment, benzonitrile contained in a glass ampule was used as the substance source 129, and a slow leak valve was used as the gas introduction amount control means 128. The subsequent steps were performed using the above vacuum processing apparatus.

Step-k The inside of the envelope 5 is evacuated, the pressure is reduced to 1 × 10 ⁻³ Pa or less, and the above-mentioned conductive films 108 for forming a plurality of electron emitting portions arranged on the electron source substrate 101 are formed. (FIG. 9 (k)) was subjected to the following processing (called forming) for forming an electron-emitting portion.

As shown in FIG. 11, the Y-direction wiring 103 is connected in common and connected to the ground. A control device 131 controls the pulse generator 132 and the line selection device 134. 133 is an ammeter. The line selection device 134 selects one line from the X-direction wiring 102 and applies a pulse voltage to it. The forming process was performed for each element row in the X direction (300 elements).

FIG. 12 is a waveform diagram of the applied pulse. The peak value of the triangular pulse as shown in FIG. 12 was gradually increased. Pulse width T1 = 1msec, pulse interval T
2 = 10 msec. Also, during the triangular pulse,
A rectangular wave pulse having a peak value of 0.1 V was inserted, and the current was measured to measure the resistance value of each row. Resistance value is 3.3kΩ
When it exceeded (1 MΩ per element), the forming of that row was terminated, and the process proceeded to the next row. This process is performed for all the rows to complete the forming of all the conductive films (the conductive films 108 for forming the electron emission portions), and to form the electron emission portions in each of the conductive films. An electron source was formed in which the electron-emitting devices were wired in a simple matrix.

Step-1 Benzonitrile was introduced into the vacuum vessel 123, the pressure was adjusted to 1.3 × 10 ⁻³ Pa, and the device current If
A pulse was applied to the electron source 1 while measuring the electron emission to activate each electron-emitting device.

FIG. 13 is a waveform diagram of a pulse generated by the pulse generator 132. As shown in FIG. 13, the pulse for the activation process is a rectangular wave, and the peak value is 14
V, pulse width T1 = 100 μsec, pulse interval is 16
7 μsec. By the line selection device 134, 16
The selection line is sequentially switched from Dx1 to Dx100 every 7 μsec. As a result, T1 = 100 μ
In this case, a rectangular wave of sec, T2 = 16.7 msec is applied with the phase slightly shifted for each row.

The ammeter 133 is used in a mode for detecting the average of the current value in the ON state of the rectangular pulse (when the voltage is 14 V), and this value becomes 600 mA (2 mA per element). At this point, the activation process ends,
The inside of the envelope 5 was evacuated.

Step-m The entirety of the image forming apparatus 121 and the vacuum vessel 123 is heated to 300 ° C. by a heating device (not shown) while continuing the evacuation.
Hold for 10 hours. By this treatment, benzonitrile and its decomposed products, which are considered to have been adsorbed on the envelope 5 and the inner wall of the vacuum vessel 123, were removed. This is Qm
It was confirmed by observation with ass127.

Step-n After confirming that the pressure is 1.3 × 10 ⁻⁵ Pa or less, the exhaust pipe is heated and closed with a burner. continue,
Ring-shaped evaporable getter 1 installed outside the image display area
6 Flush with high frequency heating.

As described above, the image forming apparatus of this embodiment was manufactured.

[Embodiment 2] FIG. 14 shows an image forming apparatus of this embodiment.

The present embodiment uses the following joints as the joints in the step-j of the steps of the first embodiment, except that the face plate 4 and the outer frame 3 are first joined by frit. The same was done.

[0092] As a sealing material for the joint, a paste-like inorganic adhesive containing zirconia and silica as main components, 3Bond Co., Ltd., product name 3715 is molded into an arbitrary shape using a dispenser or the like, and water is evaporated at 100 ° C or lower. A coating film 15 was formed by forming In on the surface of the obtained inorganic adhesive by a known vacuum deposition method such as EB or sputtering.
Next, by heating the sealing material at 160 ° C. or more, I
n is softened, press-bonded, and sealed in a temperature decreasing process. Then, as an adhesive 9, a paste adhesive containing zirconia and silica as main components: Three Bond Co., Ltd. The shape was applied to the periphery of the sealing material 14 with a dispenser, and water was evaporated at a temperature of 100 ° C. or less, followed by bonding at about 150 ° C.

An image forming apparatus was prepared in the same manner as in Example 1 except for the step-j.

[Embodiment 3] FIG. 15 shows an image forming apparatus of this embodiment.

In the present embodiment, In is deposited on a portion of the rear plate 2, the face plate 4, and the outer frame 3 which is in contact with the sealing material by a known vacuum deposition method such as EB or sputtering. The same procedure as in Example 1 was carried out except that the following joints were used as the joints of -j.

In the present embodiment, a high-molecular thermoplastic organic adhesive mainly composed of polyetherketone is used as the sealing material and the adhesive is Al as the sealing material. An organic adhesive in the form of a thermoplastic polymer sheet mainly composed of Al as a sealing material and polyetherketone as an adhesive is molded into an arbitrary shape, and heated to 330 ° C or more to soften the adhesive. , Pressure bonding, sealing, and bonding by curing the adhesive during the cooling process.
Condition can be satisfied.

An image forming apparatus was prepared in the same manner as in Example 1 except for the step-j.

Example 4 This example was performed in the same manner as in Example 1 except that the following joint was used as the joint in Step-j of Example 1.

In the present embodiment, as a bonding portion, a sealing material is In, and an adhesive is a high-molecular thermoplastic paste-like adhesive material containing polysulfone as a main component. 9, 14: Techno Alpha Co., Ltd. A stick 301 is used. The In wire is used as the sealing material 14, the In wire is formed into an arbitrary shape, and the In is softened by heating at 160 ° C. or more, the In is softened, pressure-bonded, and sealed in a temperature lowering process. Polymer-based thermoplastic paste adhesives 9, 14: Techno Alpha Co., Ltd.
After coating the glass member in an arbitrary shape by a dispenser coating method, degassing and evaporating the solvent at 150 ° C,
The heat treatment temperature is heated to 300 ° C. or higher, pressure bonding is performed, and the adhesive is cured by curing the adhesive in a temperature decreasing process.
To 6 can be satisfied.

An image forming apparatus was prepared in the same manner as in Example 1 except for the step-j.

[Embodiment 5] This embodiment is different from Embodiment 1 in that forming and activation are performed before the bonding step. In this embodiment, after performing the step-h of the process of the first embodiment,
Steps -k and 1 were performed, then steps -i and j were performed, and then steps m and n were performed.

As described above, the image forming apparatus of this embodiment was prepared.

Comparative Example 1 An image forming apparatus similar to that of Example 1 was prepared. However, in this comparative example, a step of forming at a bonding temperature of 410 ° C. was performed using a frit as an adhesive.

The image forming apparatuses of Examples 1 to 5 and Comparative Example 1 described above were compared and evaluated. For evaluation, simple matrix driving was performed, the entire surface of the image forming apparatus was allowed to emit light, and the change over time in luminance was measured. As a result, the initial luminance was different from each other, but the temporal change of the luminance was equivalent.

As described above, in the bonding step using at least two members of a sealing material in which at least one of the bonding parts has a sealing function and an adhesive having a bonding function, the heat treatment temperature is 330 ° C. or lower. Since this is a single bonding step, it was possible to reduce the power cost and to provide an envelope including the image forming apparatus.

Further, in the fifth embodiment, since the energization forming and the activation process are performed before the enclosing of the envelope, conventionally, if the frit bonding at 410 ° C. is performed after the forming and the activation, the heat is applied. Degradation of characteristics, that is, a decrease in luminance and a shortened life due to a decrease in electron emission current sometimes occurred, whereas a decrease in luminance and a shortened life were hardly observed. In addition, since the energization forming and activation processing is performed in the vacuum chamber before bonding the envelope, it is easier to introduce gas than after the adhesion of the enclosure, and there is a problem in the energization forming and activation processing. In this case, there is an advantage that only the rear plate alone is wasted instead of as an envelope.

[Embodiment 6] FIG. 16 is a perspective view of an image forming apparatus of this embodiment, and FIG. 17 is a cross-sectional view taken along the line CC 'of FIG.

The present embodiment is different from the first embodiment in that a ribbon-shaped getter is arranged in place of a ring-shaped getter, and that a flash is generated by resistance heating and a non-evaporable getter is installed in an image forming apparatus.
And different. In this embodiment, after the getter step-h, the step-
Example 1 except that step-in was performed after performing x.
An image forming apparatus was prepared in the same manner as described above.

However, in step-m of this embodiment, not only the removal of gas from the inside but also the activation of the getter is performed by heating / exhausting the image forming apparatus.

Step-x A getter layer 17 made of a Zr-V-Fe alloy is formed by sputtering on the upper wiring 102 in the image display area using a metal mask. The composition of the sputtering target used was as follows: Zr; 70%, V; 25%, Fe;
5% (weight ratio). (FIG. 8 (x)).

As described above, the electron source 1 having the getter 17
Was formed.

Comparative Example 2 An image forming apparatus similar to that of Example 6 was prepared. However, in this comparative example, a step of forming at a bonding temperature of 420 ° C. using a frit as an adhesive was performed.

A comparative evaluation was made between the image forming apparatuses of Example 6 and Comparative Example 2. For evaluation, simple matrix driving was performed, the entire surface of the image forming apparatus was allowed to emit light, and the change over time in luminance was measured.
As a result, although the initial luminance was different from each other, in the image forming apparatus of Example 6, the getter functioned sufficiently and the luminance hardly decreased even when the getter was operated for a long time. On the other hand, in Comparative Example 2, the luminance gradually decreased relatively. The degree of the decrease was almost equal to Comparative Example 1 in which no getter was provided.

[0114]

According to the present invention described above, at least one of the joints uses at least two members of a sealing material having a sealing function and an adhesive having an adhesive function, thereby reducing power costs. It is possible to provide an envelope in which the brightness is reduced, the life is shortened, and the function of the getter is hardly deteriorated. Further, when this envelope is applied to an image forming apparatus, effects such as less reduction in luminance and shortening of life, higher display quality, and sufficient getter function can be obtained.

The present invention is particularly effective in an image forming apparatus having no electrode structure such as a control electrode between an electron source and an image forming member. Similar effects are naturally expected when the present invention is applied.

[Brief description of the drawings]

FIG. 1 is a perspective view of an image forming apparatus of the present invention.

FIG. 2 is a sectional view taken along the line C-C 'of FIG.

FIG. 3 is an array diagram of phosphors.

FIG. 4 is a plan view of a matrix-connected electron source.

FIG. 5 is a sectional view taken along line A-A ′ of FIG. 4;

FIG. 6 is a block diagram of a driving circuit for television display.

FIG. 7 is a plan view of a part of an electron source.

8 is a sectional view taken along the line B-B 'of FIG.

FIG. 9 is a manufacturing process diagram of the image forming apparatus according to the first embodiment.

FIG. 10 is a schematic view of a vacuum device used in a forming step and an activation step.

FIG. 11 is a schematic diagram showing a connection method for forming and activating steps of the image forming apparatus of the present invention.

FIG. 12 is a waveform diagram of a pulse applied in a forming step.

FIG. 13 is a waveform diagram of a pulse applied in an activation step.

FIG. 14 is a cross-sectional view of the image forming apparatus according to the second embodiment.

FIG. 15 is a cross-sectional view of the image forming apparatus according to the third embodiment.

FIG. 16 is a perspective view of an image forming apparatus according to a sixth embodiment.

FIG. 17 is a sectional view taken along line C-C ′ of FIG. 16;

FIG. 18 is a perspective view of a conventional image forming apparatus.

19 is a sectional view taken along line B-B 'of FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Electron source board 2 Rear plate 3 Outer frame 4 Face plate 5 Enclosure 6 Crow base 7 Phosphor 8 Metal back 9 Adhesive 10 Row selection terminal 11 Signal input terminal 12 Black member 13 Phosphor pattern 14 Seal material 15 Coating Film 16, 17 Getter 71 Glass substrate 72 Upper wiring (X-direction wiring) 73 Lower wiring (Y-direction wiring) 74 Interlayer insulating film 75, 76 Element electrode 77 Contact hole 78 Electron emission section 81 Image forming device 82 Scanning circuit 83 Control circuit Reference Signs List 84 shift register 85 line memory 86 synchronization signal separation circuit 87 modulation signal generator 101 glass substrate 102 upper wiring 103 lower wiring 104 interlayer insulating layer 105, 106 device electrode 107 contact hole 108 electron emission unit 109 getter 121 image forming device 122 exhaust pipe 123 Empty containers 124 gate valve 125 exhaust system 126 pressure gauge 127 Q-mass 128 gas introduction amount control means 129 material source 131 controller 132 pulse generator 133 ammeter 134 line selection device

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yoshitaka Arai 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Koji Ueda 3-30-2 Shimomaruko, Ota-ku, Tokyo Non-corporation F term (reference) 5C012 AA05 BC03 5C032 AA01 BB18 5C036 EE17 EF01 EF06 EF09 EG05 EG06 EH11

Claims (7)

[Claims] 1. A face plate, a rear plate disposed to face the face plate, an outer frame between the face plate and the rear plate, surrounding the periphery, the outer frame and the face plate, And a rear plate joint that joins the outer frame and the rear plate, wherein the face plate joint and / or the rear plate joint has a sealing function. An envelope comprising a sealing material having the adhesive and an adhesive having an adhesive function. 2. The envelope according to claim 1, wherein a getter is disposed inside. 3. The envelope according to claim 1, wherein the surface of the sealing material is a metal. 4. The envelope according to claim 1, wherein the adhesive is an organic material. 5. The envelope according to claim 1, wherein the adhesive is an inorganic material. 6. An image forming apparatus using the envelope according to claim 1, wherein an image forming member and an electron accelerating electrode are formed on the face plate, and an electron source is formed on the rear plate. Characteristic image forming apparatus. 7. An image forming apparatus according to claim 6, wherein said electron source is a surface conduction electron-emitting device.