JP3122880B2 - Method of manufacturing image display device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for producing an image display apparatus including the electron source.

[0002]

2. Description of the Related Art In a device for irradiating an electron beam emitted from an electron source to a phosphor as an image display member and causing the phosphor to emit light to display an image, a vacuum vessel containing the electron source and the image display member is included. Must be kept in a high vacuum. That is, when gas is generated inside the vacuum vessel and the pressure rises, the degree of the effect depends on the type of gas, but it adversely affects the electron source and reduces the amount of electron emission,
This is because a bright image cannot be displayed. Further, the generated gas is ionized by the electron beam to become ions, which are accelerated by an electric field for accelerating the electrons and collide with the electron source, which may damage the electron source. Further, in some cases, a discharge may be generated inside, and in this case, the device may be destroyed.

Normally, a vacuum container of an image display device is formed by combining glass members and bonding a bonding portion with frit glass or the like. Once the bonding is completed, the pressure is maintained in the vacuum container. Is done by the getter. In a normal CRT, an alloy mainly containing Ba is
Heating is performed by applying current or high frequency in a vacuum vessel to form a vapor-deposited film on the inner wall of the vessel, thereby adsorbing gas generated inside to maintain a high vacuum.

In recent years, a flat display using an electron source in which a large number of electron-emitting devices are arranged on a flat substrate has been developed. In order to secure a degree of vacuum, gas generated from an image display member is reduced to a getter. A characteristic problem is that it reaches the electron source before being diffused, causing a local pressure rise and accompanying deterioration of the electron source.

In order to solve this problem, there has been proposed a configuration in which a getter material is disposed in an image display area so that generated gas can be immediately adsorbed in a flat image display device having a specific structure. I have.

[0006] For example, Japanese Patent Application Laid-Open No. 4-12436 discloses a method of forming a gate electrode with a getter material in an electron source having a gate electrode for extracting an electron beam. An emission type electron source and a semiconductor electron source having a pn junction are illustrated. Japanese Patent Application Laid-Open No. 63-181248 discloses an electrode (such as a grid) for controlling an electron beam between a cathode (cathode) group and a face plate of a vacuum vessel.
There is disclosed a method of forming a film of a getter material on the control electrode in a flat display having a structure in which is disposed.

Also, US Pat. No. 5,453,659 “A”
node Plate for Flat Panel
Display having Integrate
dGetter ", issue 26 Sept. 1
995 to Wallace et al. Discloses a technique in which a getter member is formed in a gap between stripe-shaped phosphors on an image display member (anode plate). In this example, the getter material is electrically separated from the phosphor and a conductor electrically connected thereto,
The getter is activated by applying an appropriate potential to the getter and irradiating and heating the electrons emitted from the electron source.

Japanese Patent Application Laid-Open No. 9-82245 discloses that
It is disclosed that a getter member is formed on the metal back side or on the electron source substrate side. Further, as a method of activating the getter, a dedicated heater wiring for activating the getter is laid and the heater is provided. It is disclosed that the getter is activated by heating the substrate or irradiating the getter with an electron beam.

[0009]

In the above-described image display apparatus, by arranging more getter members in the vacuum vessel of the apparatus, the deterioration of the electron source due to the gas generated in the vacuum vessel is prevented to some extent. Is possible, but
Unless the arrangement method of the getter member is devised, it is difficult to efficiently absorb the gas generated in the vacuum vessel, causing deterioration of the electron source over time, or causing variation of the display image over time. In some cases.

It is an object of the present invention to provide a method of manufacturing an image display device in which the electron emission characteristics of an electron source are not reduced with time.

Another object of the present invention is to provide a method of manufacturing an image display device in which luminance changes with time (decrease with time) are small.

Another object of the present invention is to provide a method of manufacturing an image display device in which variation in luminance over time in an image display area is small.

[0013]

The structure of the present invention to achieve the above object is as follows.

That is, the present invention provides a method for controlling
Enclosure constituted by a member including a first substrate and a second substrate
And a container disposed on the first substrate in the envelope.
An electron source, a fluorescent film disposed on the second substrate, and an accelerating device.
In a method for manufacturing an image display device including an electrode and a getter,
And bonding a plurality of members constituting the envelope
A sealing step, wherein the image display area on the first substrate is
Or disposed in an image display area on the second substrate.
Image display so as to surround a first getter and the first getter
Of the second getters arranged outside the region, the second getter
Activation process is performed before the sealing process is completed.
Those that are characterized by being.

The method of manufacturing an image display device according to the present invention is as follows.
As a further feature, "the first getter is a non-evaporable getter", "the first getter is a non-evaporable getter, and the second getter is an evaporable getter". "said first getter and the second getter are both non-evaporable getter" that, "the non-vapor
The activation process of the forming getter is performed by irradiating the getter with a laser beam.
More it carried out "it to," the first getter, the are arranged on the first substrate side "that," the first getter disposed on the first substrate electronic "The first getter is disposed on a printed wiring included in an electron source disposed on the first substrate", and "the first getter is disposed on a printed wiring included in an electron source disposed on the first substrate". Is disposed on the second substrate side. "
"The first getter is arranged on an accelerating electrode arranged on the second substrate", and "the first getter has a fluorescent film arranged on the second substrate. "The second getter is disposed on the first substrate side", "the second getter is disposed on the first substrate side", and "the second getter is disposed on the second substrate side". Has been done. "
"The electron source has a plurality of row wirings and a plurality of columns.
Multiple electron emission matrix wired by directional wiring
The electron-emitting device has a surface
Conduction is an electron-emitting device "may," further, the sealing construction
After that, the getter activation process is performed again. "
And

In the present invention, the image display area in which the first getter is disposed is an area where the fluorescent film on the second substrate is formed, and the image display area on the first substrate is the fluorescent film on the first substrate. It means both a region facing the formed region and a space region sandwiched between these two regions.

Further, in the present invention, the second getter disposed outside the image display area so as to surround the first getter ,
On the peripheral image display region outside so as to sandwich the upper Symbol image display area, or the image displayed around the outside of the image display region so as to surround the region, the electron source on the first substrate in any case, and the second Is arranged in a state of being electrically insulated from the acceleration electrode on the substrate.

In the present invention, the arrangement of the first and second getters described above is based on each member constituting the envelope itself, and further,
Before the gas generated from each member located outside the image display region among the members arranged in the envelope reaches the first getter in the image display region and is adsorbed, The second getter disposed so as to surround the first getter is quickly attracted to the second getter, so that the load on the first getter disposed in the image display area can be reduced. for that reason,
When the electron source is driven, more gas generated in the image display area can be efficiently and quickly adsorbed by the first getter, and the degree of vacuum in the envelope can be favorably maintained. Can be stabilized with time.

Further, in the present invention, it is preferable that the first getter disposed in the image display area is disposed on a wiring of an electron source. Further, it is more preferable that the wiring is a printed wiring formed by a printing method, because it can increase the suction speed and the total amount of suction of the getter and can prevent discharge during driving of the electron-emitting device.

Further, in the present invention, a getter is arranged on the first substrate or the second substrate before the sealing step of bonding a plurality of members constituting the envelope, and the sealing step is performed. By activating the getter by the end of the process, the gas generated from the adhesive for bonding a plurality of members constituting the envelope during the sealing step is adsorbed by the getter. Therefore, it is possible to minimize a decrease in the electron emission characteristics of the electron source due to the generated gas during the sealing step. By the end of the sealing step, among the above-mentioned getters, in particular, it is preferable to activate the second getter that is arranged so as to surround the first getter.
Since the decrease in the adsorbability of the first getter due to the generated gas can be suppressed as much as possible, the first getter efficiently and quickly adsorbs the gas generated more in the image display area when the electron source is driven. And the degree of vacuum in the envelope can be favorably maintained, so that the amount of electrons emitted from the electron-emitting device can be stabilized with time. Note that, in the present invention, the getter activation process is performed again after the sealing step so that the getter disposed in the envelope has a sufficient adsorption ability to the gas generated when the electron source is driven. More preferably,

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A basic configuration to which the present invention can be applied will be described below with reference to some preferred embodiments.

FIG. 1 shows that the method of the present invention can be used.
The first embodiment of an image display device capable illustrates schematically. Reference numeral 1 denotes an electron source substrate on which a plurality of electron-emitting devices 110 are provided with a plurality of row-direction wirings (upper wiring) 102 and a plurality of column-direction wirings (lower wiring) 10.
Electron sources arranged in a matrix by 3 are arranged. Here, the electron-emitting device 110 is, for example, an electron-emitting device including a pair of electrodes and a conductive film having an electron-emitting portion disposed between the pair of electrodes. As shown in FIGS. 2A and 2B, a pair of conductive films 10 arranged with a gap 116 therebetween.
8 and a pair of element electrodes 105 and 106 electrically connected to a pair of conductive films 108, respectively. Here, FIG. 2A is a plan view, and FIG. 2B is a cross-sectional view of FIG. The surface-conduction electron-emitting device shown in FIG. 2 is more preferably a device having a carbon film on the conductive film 108.

In FIG. 1, reference numeral 2 denotes a rear plate on which the electron source substrate 1 is fixed, 3 denotes a support frame, and 4 denotes a face plate, which are adhered to each other using frit glass or the like. Has formed.

Reference numeral 9 in the envelope 5 denotes a non-evaporable getter (NEG) as a first getter, and reference numeral 14 denotes a container holding a getter as a second getter.

The face plate 4 has a fluorescent film 7 and a metal back 8 formed on a transparent substrate 6 such as glass. The phosphor film 7 is made of only a phosphor in the case of a black-and-white image, but in the case of displaying a color image, pixels are formed by phosphors of three primary colors of red, green and blue, and a black conductive material is used between the pixels. Separate structure. The black conductive material is called a black stripe, a black matrix, or the like, depending on its shape. Details will be described later.

The metal back 8 is formed of a conductive thin film such as Al. The metal back 8 reflects light traveling toward the electron source substrate 1 out of the light generated from the phosphor toward the transparent substrate 6 on the face plate 4 side to improve the brightness and to reduce the light inside the envelope 5. The remaining gas also serves to prevent the phosphor from being damaged by the impact of ions generated by ionization by the electron beam. Further, it provides conductivity to the image display area of the face plate 4 to prevent charge from being accumulated, and serves as an anode electrode for the electron source.

Next, the fluorescent film 7 will be described. FIG. 3A shows a case where the phosphors 13 are arranged in stripes, and the phosphors 1 of three primary colors of red (R), green (G), and blue (B).
3 are formed in order, and are separated by a black conductive material 12 which is a black member. In this case, the black conductive material 1
The part 2 is called a black stripe. In FIG. 3B, the dots of the phosphors 13 are arranged in a grid pattern, and the dots are separated by the black conductive material 12. In this case, the black conductive material 12 is called a black matrix. There are several methods of arranging each color of the phosphor 13, and accordingly, the arrangement of the dots may employ a square lattice or the like in addition to the illustrated triangular lattice.

As a method of patterning the black conductive material 12 and the phosphor 13 on the transparent substrate 6, a slurry method, a printing method, or the like can be used. After the fluorescent film 7 is formed, a metal such as Al is further formed to form a metal back 8.

FIGS. 4A and 4B schematically show a part of the configuration of an electron source in which surface conduction electron-emitting devices arranged two-dimensionally are connected by matrix wiring. is there. 4A is a plan view, and FIG. 4B is a cross-sectional view along AA ′ in FIG. 4A.

1 is an insulating substrate made of glass or the like;
2 is a row direction wiring (upper wiring), 103 is a column direction wiring (lower wiring). Row direction wiring 102 and column direction wiring 103
Are the device electrodes 106 and 1 of each surface conduction electron-emitting device.
05 respectively.

The column wiring 103 is provided on the substrate 1,
Further, an insulating layer 104 is formed thereon, on which the row wiring 102, the device electrodes 105 and 106, and the conductive film 10 are formed.
8 are formed, and the column direction wiring 103 and the element electrode 105 are connected via the contact hole 107.

The various wirings and the like are formed by a combination of various thin film deposition methods such as a sputtering method, a vacuum evaporation method, and a plating method, and a photolithography technique, or a printing method.

In the present embodiment, the non-evaporable getter 9 as a first getter is provided in a row in the area (image display area X) on the substrate 1 side facing the area where the fluorescent film 7 is formed. It is arranged on the direction wiring 102.

The non-evaporable getter 9 in the present embodiment.
Are placed on the column wirings 103 in the image display area X, and on the metal plate 8 corresponding to the area where the fluorescent film 7 is formed on the face plate 4 side, in addition to the row wirings 102. In the upper region or on the region corresponding to the black conductive material 12 in the region on the metal back. The non-evaporable getter 9 may be installed at any one of the above-described locations, or may be installed at a plurality of locations. Further, it is desirable that the installation positions are distributed evenly throughout the entire image display area.

Here, as the above-mentioned non-evaporable getter,
Ti, Zr, Cr, Al, V, Nb, Ta, W, Mo,
At least one metal selected from the group consisting of Th, Ni, Fe, and Mn or an alloy thereof is used, and can be manufactured by a vacuum evaporation method or a sputtering method with an appropriate mask.

Further, in the present embodiment, the container 14 holding the getter 15a as the second getter is hollow outside the surrounding image display area so as to surround the non-evaporable getter 9 as the first getter. It is held and installed in a state. The container 14 may be a straight wire, a ring, or the like, and the getter 15a held by the container 14 may be the above-described non-evaporable getter material or an evaporable type having Ba as a main component. Getter materials can be used. Further, even if the second getter is arranged outside the image display area around the first getter so as to sandwich the first getter, the effects of the present embodiment described later are exerted. However, it is preferable that the second getter is arranged outside the image display area around the first getter so as to surround the first getter as shown in FIG. 1 because the effect is greater.

The rear plate 2, the support frame 3 and the face plate 4 to which the substrate 1 is fixed are joined by attaching frit glass to the joint and heating to 400 to 450 ° C. As an actual operation, in order to remove a component contained as a binder in the frit glass, heating and firing at a low temperature (this step is referred to as “temporary firing”) is first performed in an atmosphere containing oxygen. At this time, the oxygen concentration and the temperature are desirably reduced as much as possible. Specific conditions vary depending on the type of frit, but a temperature of 250 ° C. or less is desired. Thereafter, an inert gas such as Ar (inert g) is used.
As), a heat treatment at 400 to 450 ° C. is performed to weld the joint (sealing step).

Thereafter, the inside of the envelope 5 is evacuated once (vacuum forming step), and necessary processing such as activation of the electron source on the substrate 1 (electron source activating step) is performed. continue,
By exhausting and heating and degassing (baking step) inside the envelope 5, a sufficient vacuum is secured inside the envelope 5, and subsequently, a vacuum provided in the envelope for forming a vacuum is formed. The illustrated exhaust pipe is heated and closed by a burner (sealing step). In the baking step, the activation process of the non-evaporable getter 9 as the first getter is performed.

Further, the activation process of the second getter is performed. This is performed by a getter 15a (in FIG. 1, a wire getter is schematically shown in FIG. 1) held in a container 14 provided in the envelope 5. If the getter 15a is an evaporable getter such as Ba, the activation process is performed together with the first getter in the baking step. After the sealing step, the getter 15a is heated to perform a process of forming a film of the getter material by vapor deposition on the inner wall of the envelope 5 (referred to as "flash" of the getter). At this time, the getter film 15b formed
(See FIG. 1 (c)) is located outside the image display area in the envelope 5 and is insulated so as to adhere to the electron source on the substrate 1 and the metal back 8 which is an electron accelerating electrode on the substrate 1 respectively. It is formed through the layer 115.

Finally, if necessary, preferably, the non-evaporable getter 9 and, if the getter 15a is a non-evaporable getter, the getter 15a is also heated to 250 ° C. or higher.
The heat treatment is performed at 50 ° C. or less, and the activation process is performed again.

[0041] The image display device thus produced is generated from the members constituting the envelope itself, and from the members arranged in the envelope, the members located outside the image display area. Before the gas to reach the first getter in the image display area and is adsorbed thereon, the gas is quickly adsorbed by the linear second getter outside the image display area surrounding the first getter, and The load on the first getter arranged in the display area can be reduced. Therefore, when the electron source is driven, more gas generated in the image display area can be efficiently and quickly adsorbed by the first getter, and the degree of vacuum in the envelope can be maintained satisfactorily. The amount of electrons emitted from the element stabilizes over time.

FIG. 5 shows that the method of the present invention can be used.
7 schematically shows a second embodiment of a possible image display device. Reference numeral 1 denotes an electron source substrate.
An electron source in which a plurality of electron-emitting devices 110 are arranged in a matrix by a plurality of row wirings (upper wiring) 102 and a plurality of column wirings (lower wiring) 103 is arranged. Here, the electron-emitting device 110 is the surface conduction electron-emitting device described in the first embodiment.

In FIG. 5, 2 is a rear plate,
Reference numeral 3 denotes a support frame, and 4 denotes a face plate, which are adhered to each other using frit glass or the like to form an envelope 5.

In the envelope 5, reference numeral 9 denotes a first getter and a non-evaporable getter (NEG), and reference numeral 14 denotes a second getter, which is also a non-evaporable getter (NEG).

The face plate 4 has a fluorescent film 7 and a metal back 8 formed on a transparent substrate 6 made of glass or the like, and is the same as that described in the first embodiment.

Further, in this embodiment, the configuration of the electron source in which the surface conduction electron-emitting devices arranged two-dimensionally are connected by matrix wiring is shown in FIGS. 4A and 4B.
Is the same as that of the first embodiment schematically shown in FIG.

Also in the present embodiment, the non-evaporable getter 9 as the first getter is a region on the substrate 1 side (image display region) facing the region where the fluorescent film 7 is formed.
It is arranged on the row wiring 102 in X).

In the present embodiment, as in the first embodiment, the first getter is arranged not only on the row wiring 102 but also on the column wiring in the image display area X. The metal back 8 corresponding to the area on the face plate 4 where the fluorescent film 7 is formed on the face plate 103
The upper region, or the region corresponding to the black conductive material 12 in the region on the metal back, may be disposed at any one of the above-described positions, or may be disposed at a plurality of positions. You may. Further, it is desirable that the installation positions are distributed uniformly in the image display area.

Also in this embodiment, a second getter is arranged outside the image display area.

In the present embodiment, the second getter is the non-evaporable getter 14, and the non-evaporable getter 9, which is the first getter, is placed on the substrate 1 outside the image display area around the non-evaporable getter 9. , And an insulator 115.
If the non-evaporable getter 14 as the second getter is installed, the metal back 8 as an electron accelerating electrode and the electron source on the face plate 4 are insulated from the electron source on the substrate 1 if they are insulated. 1 or on the rear plate 2 to which the electron source substrate 1 is fixed, the first getter may be placed around the first getter or around the first getter so as to surround the first getter. Note that, as described in the first embodiment shown in FIG. 1, the second getter is arranged outside the image display area around the first getter so as to surround the first getter in this embodiment. Is preferred because the effect described later is greater.

As the first and second non-evaporable getters, the same getters as those in the first embodiment can be used by the same manufacturing method.

The rear plate 2, the support frame 3 and the face plate 4 to which the electron source 1 is fixed are joined by attaching frit glass to the joint and heating to 400 to 450 ° C.
As an actual operation, in order to remove a component contained as a binder in the frit glass, heating and firing at a low temperature (this step is referred to as “temporary firing”) is first performed in an atmosphere containing oxygen. At this time, the oxygen concentration and the temperature are desirably reduced as much as possible. Specific conditions vary depending on the type of frit, but a temperature of 250 ° C. or less is desired. Thereafter, an inert gas such as Ar (inert gas) is used.
In gas), a heat treatment at 400 to 450 ° C. is performed to weld the joint (sealing step). By the time the sealing step is completed, the activation step of the non-evaporable getter 14 outside the image display area is performed. In this activation step, the gas generated from the frit at the time of the sealing step is absorbed by the non-evaporable getter 14 outside the image display area, thereby deteriorating the electron emission characteristics of the electron source in the image display area and preventing non-evaporation. This is to prevent the mold getter 9 from deteriorating. In the present embodiment, the activation of the non-evaporable getter is performed by irradiating the non-evaporable getter with laser light.

Thereafter, the inside of the envelope 5 is evacuated once (vacuum forming step), and necessary processing such as activation processing of the electron source on the substrate 1 (electron source activating step) is performed. Subsequently, exhaust and heating degassing of the inside of the envelope 5 (baking step)
As a result, a sufficient vacuum is secured inside the envelope 5, and subsequently, an exhaust pipe (not shown) provided in the envelope for forming a vacuum is sealed off by heating with a burner (sealing step). .

Further, if necessary, a getter activation process is preferably performed. As this activation treatment, it is preferable to heat-treat the non-evaporable getters 9 and 14 at a temperature of 250 ° C. or more and 450 ° C. or less, more preferably at a temperature of 300 ° C. or more and 400 ° C. or less. Since the getter activation step after the sealing step is made of only the non-evaporable getter, the step of incorporating the evaporable getter and the step of getter flushing are not required, and the getter activation step can be performed by the heat step, so that the yield is good Can be activated.

The image display device thus created is generated from each of the members constituting the envelope itself, and among the members arranged in the envelope, the members located outside the image display area. Before the gas reaches the first getter in the image display area and is adsorbed, the gas is quickly adsorbed by the linear second getter outside the image display area sandwiching the first getter by at least two sides. , The first arranged in the image display area
The load on the getter can be reduced. Therefore, when the electron source is driven, more gas generated in the image display area can be efficiently and quickly adsorbed by the first getter, and the degree of vacuum in the envelope can be maintained satisfactorily. The amount of electrons emitted from the element stabilizes over time. Note that, as described in the first embodiment, it is more preferable that the second getter in the present embodiment is a line-shaped getter that surrounds the first getter on four sides.

Next, NTS is performed by the above image display device.
An example of a structure of a driving circuit for performing television display based on a C-system television signal will be described with reference to FIG. 9, 81 is an image display device, 82 is a scanning circuit, 83 is a control circuit, 84 is a shift register, 85 is a line memory, 86 is a synchronizing signal separation circuit, 87 is a modulation signal generator, Vx and Va are DC voltages Source.

[0057] The image display device 81, the terminal D _ox1 to D _oxm, connected to an external electric circuit via terminals D _Oy1 through D _Oyn and high voltage terminal Hv.

The terminals D _{ox1 to} D _oxm are _connected to the image display device 8.
1, ie, a group of surface conduction electron-emitting devices arranged in a matrix of m rows and n columns in a matrix.
A scanning signal for sequentially driving each row (n elements) is applied.

[0059] The terminal D _Oy1 to _D oyn, modulation signal for controlling the output electron beam of each of the surface conduction electron-emitting devices of one row selected by a scan signal.

The high voltage terminal Hv is connected to a DC voltage source Va.
For example, a DC voltage of 10 kV is supplied, which is an accelerating voltage for applying sufficient energy to the electron beam emitted from the surface conduction electron-emitting device to excite the phosphor.

The scanning circuit 82 will be described. The circuit includes m switching elements (S _{1 to} S _{m in the} figure).
). Each switching element is connected to the output voltage of the DC voltage power supply Vx or 0
[V] to select either the (ground level), it is terminals D _ox1 to D _oxm the image display device 81 electrically connected. Each of the switching elements S _{1 to} S _m includes a control circuit 83
Operates on the basis of the control signal Tscan output by the controller, and can be configured by combining switching elements such as FETs, for example.

In the case of this embodiment, the DC voltage source Vx is based on the characteristics (electron emission threshold voltage) of the surface conduction electron-emitting device, and the driving voltage applied to the unscanned device is an electron emission threshold. It is set to output a constant voltage that is equal to or lower than the value voltage.

The control circuit 83 has a function of matching the operation of each unit so that appropriate display is performed based on an image signal input from the outside. The control circuit 83 generates control signals Tscan, Tsft and Tmry for each unit based on the synchronization signal Tsync sent from the synchronization signal separation circuit 86.

The synchronizing signal separating circuit 86 is a circuit for separating a synchronizing signal component and a luminance signal component from an NTSC television signal input from the outside, and uses a general frequency separating (filter) circuit or the like. Can be configured. The synchronizing signal separated by the synchronizing signal separating circuit 86 is composed of a vertical synchronizing signal and a horizontal synchronizing signal, but is shown here as a Tsync signal for convenience of explanation. The luminance signal component of the image separated from the television signal is represented as a DATA signal for convenience. This DATA signal is input to the shift register 84.

The shift register 84 is for serially / parallel converting the DATA signal input serially in time series for each line of an image, and is based on a control signal Tsft sent from the control circuit 83. (Ie, the control signal Tsft may be rephrased as a shift clock of the shift register 84). The data for one line of the serial / parallel-converted image (corresponding to the driving data for n electron-emitting devices) are I _{d1 to} I _dn
Are output from the shift register 84 as n parallel signals.

The line memory 85 is a storage device for storing data for one line of an image for a necessary time only.
The contents of Id1 to Idn are stored as appropriate according to the control signal Tmry sent from the control circuit 83. The stored content is I
_d'1 to be output as I _d'n, it is input to the modulation signal generator 87.

The modulation signal generator 87 outputs the image data I _{d′ 1}
Or in response to each of the I _d'n, a signal source for appropriately driving modulating each of the electron-emitting device, the output signal, a surface conduction type image display device 81 through the terminals D _Oy1 to D _Oyn Applied to the electron-emitting device.

The electron-emitting device to which the present invention can be applied has the following basic characteristics with respect to the emission current Ie. That is, electron emission has a clear threshold voltage Vth, and electron emission occurs only when a voltage higher than Vth is applied. For a voltage equal to or higher than the electron emission threshold, the emission current also changes according to the change in the voltage applied to the device. Therefore, when a pulse-like voltage is applied to the device, for example, when a voltage lower than the electron emission threshold is applied, electron emission does not occur, but when a voltage higher than the electron emission threshold is applied. Outputs an electron beam. At that time, the intensity of the output electron beam can be controlled by changing the peak value Vm of the pulse. Further, by changing the pulse width Pw, it is possible to control the total amount of charges of the output electron beam.

Therefore, as a method of modulating the electron-emitting device according to the input signal, a voltage modulation method, a pulse width modulation method, or the like can be adopted. When implementing the voltage modulation method, the modulation signal generator 87 generates a voltage pulse of a fixed length, and a voltage modulation circuit capable of appropriately modulating the peak value of the voltage pulse according to input data. Can be used.

When implementing the pulse width modulation method,
As the modulation signal generator 87, a pulse width modulation circuit that generates a voltage pulse having a constant peak value and appropriately modulates the width of the voltage pulse according to input data can be used.

The shift register 84 and the line memory 85
Can be adopted as a digital signal type or an analog signal type. This is because the serial / parallel conversion and storage of the image signal may be performed at a predetermined speed.

When the digital signal type is used, it is necessary to convert the output signal DATA of the synchronization signal separation circuit 86 into a digital signal. For this purpose, an A / D converter is provided at the output of the synchronization signal separation circuit 86. Just do it. In connection with this, the circuit used for the modulation signal generator 87 differs slightly depending on whether the output signal of the line memory 85 is a digital signal or an analog signal. That is, in the case of the voltage modulation method using a digital signal, for example, the D /
An A conversion circuit is used, and an amplification circuit and the like are added as necessary. In the case of the pulse width modulation method, the modulation signal generator 87 includes, for example, a high-speed oscillator, a counter for counting the number of waves output from the oscillator, and a comparator for comparing the output value of the counter with the output value of the memory. (Comparator) is used. If necessary, an amplifier for amplifying the pulse width modulated signal output from the comparator to the drive voltage of the electron-emitting device can be added.

In the case of the voltage modulation method using an analog signal, an amplification circuit using, for example, an operational amplifier or the like can be used as the modulation signal generator 87, and a level shift circuit or the like can be added as necessary. In the case of the pulse width modulation method, for example, a voltage-controlled oscillation circuit (VCO) can be employed, and an amplifier for amplifying the voltage up to the drive voltage of the surface conduction electron-emitting device can be added as necessary.

In the image display device of the present invention which can take such a configuration, each of the electron-emitting devices is provided with an external terminal D
_ox1 to D _oxm, by applying a voltage via the D _Oy1 to _D oyn, electron emission occurs. A high voltage is applied to the metal back 8 or the transparent electrode (not shown) via the high voltage terminal Hv to accelerate the electron beam. The accelerated electrons collide with the fluorescent film 7 to emit light, and an image is displayed.

The configuration of the image display device described here is an example of an image display device to which the present invention can be applied, and various modifications can be made based on the technical idea of the present invention. The input signal has been described in the NTSC system. However, the input signal is not limited to this. In addition to the PAL and SECAM systems,
A TV signal composed of more scanning lines than these (for example,
A high-definition TV system such as the MUSE system can also be adopted.

The image display device of the present invention can be used as a display device for a television broadcast, a display device such as a video conference system or a computer, or an image display device as an optical printer using a photosensitive drum or the like. Can be used.

[0077]

Hereinafter, the present invention will be described in more detail with reference to preferred embodiments. However, the present invention is not limited to these embodiments, and the present invention is not limited thereto. This includes the case where the element is replaced or the design is changed.

REFERENCE EXAMPLE 1 The image display device of this reference example has the same configuration as the device schematically shown in FIG. 1, and includes a non-evaporable getter (NEG) 9.
Is the row direction wiring (also called upper wiring) in the image display area
It is arranged on almost the entire surface on the surface 102.

[0079] The image display device of this reference example, the substrate 1
Above, a plurality (100 rows × 300 columns) of surface conduction electron-emitting devices have an electron source wired in a simple matrix.

FIG. 10 is a partial plan view of the electron source substrate 1. FIG. 11A is a sectional view taken along the line BB ′ in FIG.
FIG. 11B is a cross-sectional view taken along the line CC ′. However, the same reference numerals in FIGS. 10 and 11 indicate the same members. Here, 1 is an electron source substrate, 102 is a row direction wiring (upper wiring), 1
03 is a column-directional wiring (lower wiring), 108 is a conductive film including an electron emitting portion, 105 and 106 are device electrodes, 104 is an interlayer insulating layer, and 107 is for electrical connection between the device electrode 105 and the lower wiring 103. Contact hole 115, lower wiring 1
03 is an insulating layer.

[0081] Hereinafter, the method for manufacturing an image display device of the present embodiment will be described with reference to FIG. 12.

Step-a The glass substrate 1 was sufficiently washed with a detergent, pure water and an organic solvent. A 0.5 μm thick silicon oxide film was formed on the glass substrate 1 by a sputtering method. Next, a photoresist (AZ1370 / Hoechst) is provided on the substrate 1.
After spin coating and baking with a spinner, the photomask image was exposed and developed to form a resist pattern of the lower wiring 103. Further, Cr having a thickness of 5 nm and Au having a thickness of 600 nm are sequentially laminated by vacuum evaporation.
Unnecessary portions are removed from the Cr deposited film by lift-off,
The lower wiring 103 having a desired shape was formed (FIG. 12).
(A)).

Step-b Next, an interlayer insulating layer 104 made of a silicon oxide film having a thickness of 1.0 μm was deposited by RF sputtering (FIG. 12).
(B)).

Step-c A photoresist pattern for forming the contact hole 107 was formed in the silicon oxide film deposited in the step b, and the interlayer insulating layer 104 was etched using the photoresist pattern as a mask to form the contact hole 107 (FIG. 12).
(C)). Etching is RIE using CF ₄ and H ₂ gas
(Reactive Ion Etching) method.

Step-d A pattern was formed such that a resist was applied to portions other than the contact hole 107, and 5 nm thick Ti and 500 nm thick Au were sequentially deposited by vacuum evaporation. Unnecessary portions were removed by lift-off to bury the contact holes 107 (FIG. 12D).

Step-e The pattern of the device electrodes 105 and 106 is changed by photoresist (R
D-2000N-41 / manufactured by Hitachi Chemical Co., Ltd.) and 5 nm thick Ti and 100 nm thick N by vacuum evaporation.
i were sequentially deposited. The photoresist pattern is dissolved with an organic solvent, the Ni / Ti deposited film is lifted off, and the device electrode 1 having a device electrode interval G of 3 μm and a device electrode width of 300 μm.
05 and 106 were formed (FIG. 12E).

Step-f After a photoresist pattern of the upper wiring 102 is formed on the device electrodes 105 and 106, Ti having a thickness of 5 nm and a thickness of 5
Au having a thickness of 00 nm was sequentially deposited by vacuum evaporation, and unnecessary portions were removed by lift-off to form an upper wiring 102 having a desired shape (FIG. 12F).

Step-g A 100 nm-thick Cr film (not shown) is deposited and patterned by vacuum evaporation, and a Pd amine complex solution (ccp4230 / Okuno Pharmaceutical Co., Ltd.) is spin-coated thereon with a spinner. A heating and baking treatment was performed at 10 ° C. for 10 minutes. In addition, the thus formed conductive film 108 for forming an electron emitting portion composed of fine particles made of Pd as a main element.
Has a thickness of 8.5 nm and a sheet resistance of 3.9 × 10 ⁴ Ω.
/ □ (FIG. 12 (g)).

Step-h The Cr film and the conductive film 1 for forming the electron-emitting portion after firing.
08 was wet-etched with an acid etchant to form a conductive film 108 having a desired pattern.
2 (h)).

By the above steps, a plurality of (1)
(00 rows × 300 columns) conductive film 10 for forming electron-emitting portions
8 and a plurality of upper wirings 102 and a plurality of lower wirings 103 in which the plurality of conductive films 108 are arranged in a simple matrix.

Step-x Further, a non-evaporable getter layer 9 made of a Zr-V-Fe alloy was formed on each upper wiring 102 using a metal mask by a sputtering method. The thickness of the getter layer 9 was adjusted to be 2 μm. The composition of the sputtering target used was Zr; 70%, V; 25%, Fe; 5%.
(Weight ratio) (FIG. 12 (x)).

Step-i Next, the face plate 4 shown in FIG. 1 was prepared as follows.

The glass substrate 6 was sufficiently cleaned using a detergent, pure water and an organic solvent. On top of this, 0.1 μm of ITO was deposited by a sputtering method to form a transparent electrode (not shown). Subsequently, a phosphor film 7 was applied by a printing method, and the surface was smoothed (generally called “filming”) to form a phosphor portion. The fluorescent film 7 is a fluorescent film shown in FIG. 3A in which stripe-shaped phosphors (R, G, B) 13 and black conductive materials (black stripes) 12 are alternately arranged. Further, a metal back 8 made of an Al thin film was formed on the fluorescent film 7 to a thickness of 0.1 μm by a sputtering method.

Step-j Next, the envelope 5 shown in FIG. 1 was prepared as follows.

After fixing the substrate 1 formed by the above-described steps on the rear plate 2, the support frame 3 and the face plate 4 are combined, and the lower wiring 103 and the upper wiring 102 of the substrate 1 are connected to the row selection terminals 10 and Each of them was connected to the signal input terminal 11, and the positions of the substrate 1 and the face plate 4 were strictly adjusted and sealed to form the envelope 5. The sealing method is
Frit glass is applied to the joint and 450 g in Ar gas
A heat treatment was performed at 30 ° C. for 30 minutes for bonding. The fixing of the substrate 1 and the rear plate 2 was performed by the same process.
Further, when the rear plate 2 and the face plate 4 are arranged, simultaneously, the outside of the image display area is surrounded by the non-evaporable getter 9 on the upper wiring 102 in the image display area.
A wire-type getter (container) 14 of an evaporable getter containing Ba as a main component was arranged in a hollow state on the side.

Next, the subsequent steps were performed using the vacuum apparatus shown in FIG.

As shown in FIG. 13, the envelope 5 formed as described above is connected to the vacuum vessel 1 through the exhaust pipe 122.
23, and the evacuation device 12
5 are connected, and a gate valve 124 is provided between them. A pressure gauge 126 and a quadrupole mass spectrometer (Q-mass) 127 are attached to the vacuum vessel 123 so that the internal pressure and each partial pressure of the residual gas can be monitored. Since it is difficult to directly measure the pressure and the partial pressure in the envelope 5, the pressure and the partial pressure of the vacuum vessel 123 are measured, and these values are regarded as those in the envelope 5.

The exhaust device 125 is an ultra-high vacuum exhaust device including a sorption pump and an ion pump. A plurality of gas introduction devices are connected to the vacuum container 123,
The substance stored in the substance source 129 can be introduced. The introduced substance is filled in a cylinder or an ampoule according to the type, and the introduced amount can be controlled by the gas introduction amount control device 128. The gas introduction amount control means 128
Depending on the type of introduced substance, flow rate, required control accuracy, etc.,
Needle valves, mass flow controllers and the like are used. In the present reference example, benzonitrile contained in a glass ampoule was used as the substance source 129, and the gas introduction amount control means 128 was a slow leak valve.

The steps performed using the above vacuum apparatus will be described below.

Step-k First, the inside of the envelope 5 is evacuated, and the pressure is reduced to 1 × 10 ⁻³ Pa.
In the following, a process called a forming process described below for forming a gap 116 in the conductive film 108 for forming a plurality of electron emission portions arranged on the substrate 1 was performed.

As shown in FIG. 14, the column wiring 103 is connected in common and connected to the ground. A control device 131 controls the pulse generator 132 and the line selection device 134. 133 is an ammeter. The line selection device 134 selects one line from the row direction wiring 102 and applies a pulse voltage to this. The forming process was performed for each element row in the row direction (300 elements). The waveform of the applied pulse was a triangular wave pulse as shown in FIG. 15A, and the peak value was gradually increased. Pulse width T ₁ = 1ms
ec. , Pulse interval T ₂ = 10 msec. And A rectangular wave pulse having a peak value of 0.1 V was inserted between the triangular wave pulses, and the current was measured to measure the resistance value of each row. When the resistance value exceeded 3.3 kΩ (1 MΩ per element), the forming of the row was terminated, and the processing of the next row was started. This process is performed for all the rows, and the forming of all the conductive films (the conductive film 108 for forming the electron emission portions) is completed.
Was formed (FIG. 12 (k)).

Step-1 Next, benzonitrile was introduced into the vacuum vessel 123 shown in FIG. 13, the pressure was adjusted to 1.3 × 10 ^-3 Pa, and the substrate current was measured while measuring the device current If. A pulse was applied to 1 to activate all the conductive films having the gap 116. Pulse generator 132 (see FIG. 14)
Is a rectangular waveform shown in FIG. 15B, the peak value is 14 V, and the pulse width T ₁ = 100 μsec.
c. The pulse interval is 167 μsec. It is. 167 μsec. The selection line is sequentially switched from D _x1 to D _x100 every time. As a result, each row has T ₁ = 100 μsec. , T ₂ = 16.7 msec. Is applied with a slightly shifted phase for each row.

The ammeter 133 is used in a mode for detecting the average of the current value in the ON state of the rectangular pulse (when the voltage is 14 V), and this value becomes 600 mA (2 mA per element). At this point, the activation process has been completed. By the above activation process, all the conductive films 10
The carbon film was formed in the gap 116 of No. 8.

Step-m While evacuating the envelope 5, a heating device (not shown)
The whole of the envelope 5 and the vacuum vessel 123 is set at 300 ° C.
Hold for hours. By this treatment, benzonitrile and its decomposed products, which are considered to have been adsorbed on the envelope 5 and the inner wall of the vacuum vessel 123, were removed. This is Q-mas
It was confirmed by observation at s127. In this step, not only the gas is removed from the inside by heating and exhausting the envelope 5, but also the activation of the non-evaporable getter 9 is performed.

Step-n After confirming that the pressure was 1.3 × 10 ⁻⁵ Pa or less, the exhaust pipe was heated and closed with a burner. continue,
The evaporable getter 1 held in four containers 14 installed in a hollow state outside the image display area so as to surround the non-evaporable getter 9 on the upper wiring 102 in the image display area.
The getter film 15b was formed by flashing the insulator 5a on the insulator 115 so as to be electrically insulated from the electron source and the metal back 8 by resistance heating.

As described above, the non-evaporable getter as the first getter in the image display area and the evaporable getter as the second getter outside the image display area and around the first getter, respectively. An image display device according to the present reference example was arranged.

Reference Example 2 FIG. 16 shows an image display device of the present reference example.

In the present reference example, the same steps as in Reference Example 1 were performed from Steps-a to i, without performing Step-x of Reference Example 1, and then the following Step-y was performed.

Step-y A non-evaporable getter layer 9 made of a Ti-Al alloy was formed on the entire surface of the metal back 8 of the face plate 4 by a sputtering method. The thickness of the getter layer 9 made of a Ti—Al alloy was 50 nm. The composition of the sputtering target used was Ti; 85%, Al; 15% (weight ratio).
It is.

Thereafter, steps -j to n are performed in the same manner as in Reference Example 1, and a non-evaporable getter is provided as a first getter in the image display area, and the first getter is provided outside the image display area. An image display device according to the present reference example in which evaporable getters were arranged around the device was produced.

Reference Example 3 FIGS. 17A and 17B show the structure of the face plate of the image display device of this reference example. 17A is a plan view, and FIG. 17B is a cross-sectional view taken along the line BB ′ of FIG.

[0112] In the present embodiment does not perform the steps -x foregoing Reference Example 1, to step -A～i, after performing the same steps as in Reference Example 1 were subjected to the following steps -z.

Step-z A non-evaporable getter layer 9 made of a Ti-Al alloy is formed on the black 12 of the face plate 4 by a sputtering method.
Was formed. The thickness of the Ti—Al alloy getter layer 9 is 1 μm.
m. The composition of the used sputtering target is Ti; 85%, Al; 15% (weight ratio).

Thereafter, steps -j to n are carried out in the same manner as in Reference Example 1 so that the non-evaporable getter, which is the first getter, is located in the image display area and the first getter is located outside the image display area. The image display device of the present reference example in which the evaporable getter as the second getter was disposed around the image display device.

Reference Example 4 FIG. 18 shows an image display device of the present reference example.

[0116] In this reference example, and it evaporable getter container 14 steps in -j in Reference Example 1 described above is of a ring shape shown in FIG. 18, the getter flash in step -n Example 1 other than that was carried out in a high-frequency heating is San
In the same manner as considered Example 1, the non-evaporable getter is first getter in the image display area is also a second getter first getter surrounding four sides an image display region outside the line The image display device of the present reference example in which the evaporable getters each having a shape were arranged.

Reference Example 5 FIG. 19 shows an image display device of the present reference example.

The present reference example is a container 1 in a hollow state with four sides.
Out of 4, two opposite sides are ST122 (manufactured by SAES Corporation).
Using a getter 14 'of the wire-shaped non-evaporating, its activation, after sealing, after flashed a ring-shaped evaporable getter 14, except that was carried out for 2 hours at 450 ° C., reference <br / In the same manner as in Example 4, a non-evaporable getter, which is the first getter in the image display area, and a second getter outside the image display area and around the first getter, The evaporative getter and the non-evaporable getter of the present embodiment were respectively arranged to produce an image display device of the present reference example.

Reference Example A In the present reference example, an image display device similar to that of Reference Example 1 was prepared, except that the evaporable getter was arranged only on one side outside the image display area.

In this embodiment, as shown in FIG. 20, the evaporable getter 14 is disposed on one side outside the image display area, and after the sealing, the evaporable getter 14 is flashed by the heating wire 17 to obtain a getter film. Was performed.

[0121] Reference Example 5 and from Reference Example 1 described above,
Each of the image forming apparatuses of Reference Example A was subjected to simple matrix driving, each of the image display apparatuses was continuously illuminated over the entire surface, and the change over time in luminance was measured.

As a result, although the initial luminances are different from each other, the image display devices of Reference Examples 1 to 5 hardly show a decrease in the luminance even after being operated for a long time as compared with the image display devices of Reference Example A. In addition, there was almost no variation in luminance between pixels. Reference Example 6 The image display device of this reference example has the same configuration as the device schematically shown in FIG. (NEG) 9
Is a row-direction wiring (also referred to as an upper wiring) 1 in the image display area.
Non-evaporable getter (NEG) 14
Are disposed on the insulating layer 115 covering the column-directional wiring (also referred to as lower wiring) 103 on the electron source substrate 101 outside the image display area.

[0123] The image display device of this reference example, the substrate 1
Above, a plurality (100 rows × 300 columns) of surface conduction electron-emitting devices have an electron source wired in a simple matrix.

FIG. 21 is a partial plan view of the electron source substrate 1. FIG. 22 shows a cross-sectional view taken along line BB ′ and a line CC ′ in FIG. However, the same reference numerals in FIGS. 21 and 22 indicate the same members. Here, 1 is an electron source substrate, 1
02 is a row direction wiring (upper wiring), 103 is a column direction wiring (lower wiring), 108 is a conductive film including an electron emitting portion,
106 is an element electrode, 104 is an interlayer insulating layer, 107 is a contact hole for electrical connection between the element electrode 105 and the lower wiring 103, and 115 is an insulating layer on the lower wiring 103.

[0125] Hereinafter, the method for manufacturing an image display device of the present embodiment will be described with reference to FIG. 12.

Step-a The glass substrate 1 was sufficiently washed with a detergent, pure water and an organic solvent. A 0.5 μm thick silicon oxide film was formed on the glass substrate 1 by a sputtering method. Next, a photoresist (AZ1370 / Hoechst) is provided on the substrate 1.
After spin coating and baking with a spinner, the photomask image was exposed and developed to form a resist pattern of the lower wiring 103. Further, Cr having a thickness of 5 nm and Au having a thickness of 600 nm are sequentially laminated by vacuum evaporation.
Unnecessary portions are removed from the Cr deposited film by lift-off,
The lower wiring 103 having a desired shape was formed (FIG. 12).
(A)).

Step-b Next, an interlayer insulating layer 104 made of a silicon oxide film having a thickness of 1.0 μm was deposited by RF sputtering (FIG. 12).
(B)). At this time, the lower wiring 10 outside the image display area
3 was also deposited on the insulating film 115.

A photoresist pattern for forming a contact hole 107 was formed in the silicon oxide film deposited in the step b, and the interlayer insulating layer 104 was etched using the photoresist pattern as a mask to form a contact hole 107 (FIG. 12C). ). Etching is performed using R using CF ₄ and H ₂ gas.
It was based on the IE (Reactive Ion Etching) method.

Step-d A pattern was formed such that a resist was applied to portions other than the contact hole 107, and 5 nm thick Ti and 500 nm thick Au were sequentially deposited by vacuum evaporation. Unnecessary portions were removed by lift-off to bury the contact holes 107 (FIG. 12D).

Step-e The pattern of the device electrodes 105 and 106 was changed by using a photoresist (R
D-2000N-41 / manufactured by Hitachi Chemical Co., Ltd.) and 5 nm thick Ti and 100 nm thick N by vacuum evaporation.
i were sequentially deposited. The photoresist pattern is dissolved with an organic solvent, the Ni / Ti deposited film is lifted off, and the device electrode 1 having a device electrode interval G of 3 μm and a device electrode width of 300 μm.
05 and 106 were formed (FIG. 12E).

Step-f After a photoresist pattern of the upper wiring 102 is formed on the device electrodes 105 and 106, Ti having a thickness of 5 nm and a thickness of 5
Au having a thickness of 00 nm was sequentially deposited by vacuum evaporation, and unnecessary portions were removed by lift-off to form an upper wiring 102 having a desired shape (FIG. 12F).

Step-g A 100 nm-thick Cr film (not shown) is deposited and patterned by vacuum evaporation, and a Pd amine complex solution (ccp4230 / Okuno Pharmaceutical Co., Ltd.) is spin-coated on the film by a spinner. A heating and baking treatment was performed at 10 ° C. for 10 minutes. In addition, the thus formed conductive film 108 for forming an electron emitting portion composed of fine particles made of Pd as a main element.
Has a thickness of 8.5 nm and a sheet resistance of 3.9 × 10 ⁴ Ω.
/ □ (FIG. 12 (g)).

Step-h The Cr film and the conductive film 1 for forming the electron-emitting portion after firing.
08 was wet-etched with an acid etchant to form a conductive film 108 having a desired pattern.
2 (h)).

According to the above steps, a plurality (1)
(00 rows × 300 columns) conductive film 10 for forming electron-emitting portions
8 and a plurality of upper wirings 102 and a plurality of lower wirings 103 in which the plurality of conductive films 108 were wired in a simple matrix.

Step-x Further, the getter layer 9 made of a Zr-V-Fe alloy is formed on the upper wiring 102 and the insulating film 115 on the lower wiring 103 outside the image display area by using a metal mask. 14 was formed. The thickness of the getter layers 9 and 14 is 2 μm
It was adjusted to be. The composition of the sputtering target used was Zr; 70%, V; 25%, Fe; 5%.
(Weight ratio) (FIG. 12 (x)).

Step-i Next, the face plate 4 shown in FIG. 5 was prepared in the same manner as in Step-i of Reference Example 1 described above.

Step-j Next, the envelope 5 shown in FIG. 5 was prepared as follows.

After fixing the substrate 1 formed by the above-described steps on the rear plate 2, the support frame 3 and the face plate 4 are combined, and the lower wiring 103 and the upper wiring 102 of the substrate 1 are connected to the row selection terminals 10 and Each of them was connected to the signal input terminal 11, and the positions of the substrate 1 and the face plate 4 were strictly adjusted and sealed to form the envelope 5. The sealing method is
Frit glass is applied to the joint and 450 g in Ar gas
A heat treatment was performed at 30 ° C. for 30 minutes for bonding. The fixing of the substrate 1 and the rear plate 2 was performed by the same process.

[0139] Next, subjected to the following steps using the vacuum apparatus shown in Fig. 13 described in the preceding Example 1.

Step-k First, the inside of the envelope 5 is evacuated, and the pressure is set to 1 × 10 ⁻³ Pa.
In the following, a process called a forming process described below for forming a gap 116 in the conductive film 108 for forming a plurality of electron emission portions arranged on the substrate 1 was performed.

As shown in FIG. 14, the column wiring 103 is connected in common and connected to the ground. A control device 131 controls the pulse generator 132 and the line selection device 134. 133 is an ammeter. The line selection device 134 selects one line from the row direction wiring 102 and applies a pulse voltage to this. The forming process was performed for each element row in the row direction (300 elements). The waveform of the applied pulse was a triangular wave pulse as shown in FIG. 15A, and the peak value was gradually increased. Pulse width T ₁ = 1ms
ec. , Pulse interval T ₂ = 10 msec. And A rectangular wave pulse having a peak value of 0.1 V was inserted between the triangular wave pulses, and the current was measured to measure the resistance value of each row. When the resistance value exceeded 3.3 kΩ (1 MΩ per element), the forming of the row was terminated, and the processing of the next row was started. This process is performed for all the rows, and the forming of all the conductive films (the conductive film 108 for forming the electron emission portions) is completed.
Was formed (FIG. 12 (k)).

Step-1 Next, benzonitrile was introduced into the vacuum vessel 123 of FIG. 13, the pressure was adjusted to 1.3 × 10 ⁻³ Pa, and the substrate was measured while measuring the device current If. A pulse was applied to 1 to activate all the conductive films having the gap 116. Pulse generator 132 (see FIG. 14)
Is a rectangular waveform shown in FIG. 15B, the peak value is 14 V, and the pulse width T ₁ = 100 μsec.
c. The pulse interval is 167 μsec. It is. 167 μsec. The selection line is sequentially switched from D _x1 to D _x100 every time. As a result, each row has T ₁ = 100 μsec. , T ₂ = 16.7 msec. Is applied with a slightly shifted phase for each row.

The ammeter 133 is used in a mode for detecting the average of the current value in the ON state of the rectangular pulse (when the voltage is 14 V), and this value becomes 600 mA (2 mA per element). At this point, the activation process has been completed. By the above activation process, all the conductive films 10
The carbon film was formed in the gap 116 of No. 8.

Step-m While evacuating the envelope 5, a heating device (not shown)
The whole of the envelope 5 and the vacuum vessel 123 is set at 300 ° C.
Hold for hours. By this treatment, benzonitrile and its decomposed products, which are considered to have been adsorbed on the envelope 5 and the inner wall of the vacuum vessel 123, were removed. This is Q-mas
It was confirmed by observation at s127. In this step, not only the gas is removed from the inside by heating and evacuation of the envelope 5, but also the activation processing of the non-evaporable getters 9 and 14 is performed.

Step-n After confirming that the pressure was 1.3 × 10 ⁻⁵ Pa or less, the exhaust pipe was heated and closed with a burner.

As described above, the non-evaporable getter, which is the first getter, is provided in the image display area, and the non-evaporable getter is provided outside the image display area and around the first getter. the created image display apparatus arranged present embodiment.

Reference Example 7 FIG. 23 shows an image display device of the present reference example.

In the present reference example, first, the following step-f-2 was performed between step-f and step-g of the above-mentioned reference example 6.

Step-f-2 Insulating film 115 made of a silicon oxide film having a thickness of 1.0 μm
Was also deposited on the upper wiring 102 outside the image display area by the RF sputtering method.

Further, in the step-x of the above-described reference example 6, when forming a getter on the upper wiring 102 in the image display area and on the insulating film 115 on the lower wiring 103 outside the image display area, Insulating film 115 on upper wiring 102 outside region
Getter layers 9 and 14 made of a Zr-V-Fe alloy were also formed thereon by sputtering. Getter layers 9, 14
Was adjusted to have a thickness of 2 μm. The composition of the sputtering target used was Zr; 70%, V;
%, Fe; 5% (weight ratio).

Except for the above steps, in the same manner as in the above-described reference example 6, a non-evaporable getter, which is the first getter, is provided in the image display area, and a non-evaporable getter is provided outside the image display area and around the first getter. In addition, an image display device in which non-evaporable getters were respectively arranged was created.

[0152] [Reference Example 8] The image display device of the present embodiment shown in FIG.

In the present reference example, the same steps as in Reference Example 6 were performed from Steps-a to i without performing Step-x of Reference Example 6, and then the following Step-y was performed.

Step-y A getter layer 9 is formed on the entire surface of the metal back 8 of the face plate 4, and the metal back 8 is formed on four sides of the face plate 4 outside the image display area on the glass substrate 6.
A getter 14 layer was formed in a region other than the high-pressure outlet (not shown) so as to be insulated from the substrate. Specifically, a getter layer 9 made of a Ti—Al alloy is formed by a sputtering method.
14 was formed. The thicknesses of the Ti—Al alloy getter layers 9 and 14 were 50 nm. The composition of the sputtering target used was Ti; 85%, Al; 15% (weight ratio).
It is.

Thereafter, steps -j to j are performed in the same manner as in Reference Example 6 described above.
n, a non-evaporable getter as a first getter is arranged in the image display area, and a non-evaporable getter is also arranged outside the image display area and around the first getter. An image display device was created.

Reference Example 9 FIG. 7 shows an image display device of this reference example.

In the present reference example, the same steps as in Reference Example 6 were performed from Steps-ai to Steps-a to i without performing Step-x of Reference Example 6, and then the following Step-z was performed.

Step-z The getter layer 9 is formed on the black stripes 12 of the face plate 4 and is insulated from the metal back 8 on four sides of the face plate 4 outside the image display area on the glass substrate 6. As described above, the getter 14 layer was formed in a region other than the high-pressure extraction portion. Specifically, getter layers 9 and 14 made of a Ti-Al alloy were formed by a sputtering method. The thickness of the getter layers 9 and 14 of the Ti—Al alloy is 1
μm. The composition of the used sputtering target is Ti; 85%, Al; 15% (weight ratio).

Thereafter, steps -j to n are carried out in the same manner as in Reference Example 6 so that the non-evaporable getter, which is the first getter, is located in the image display area and the first getter is located outside the image display area. A non-evaporable getter, which is a second getter, is also provided around the image display device.

Reference Example 10 In this reference example, the thickness of the non-evaporable getter 14 outside the image display area was 5 μm, which was larger than the thickness of the non-evaporable getter 9 in the image display area. in the same manner as in reference example 6, a non-evaporable getter is first getter in the image display area is also non-evaporation, which is a second getter around sandwiching the first getter an image display region outside An image display device was created in which the mold getters were respectively arranged.

[0161] The image display device of Reference Example 11] This Example is shown in FIG.

[0162] In this reference example, the non-evaporable getter 14 outside the image display area on either side of the rear plate and the face plate side, so as to surround the non-evaporable getter 9 respectively formed on four sides, after sealing except that the non-evaporable getter subjected to heat treatment for 3 hours at 350 ° C. was activated, prepared in the same manner as in reference example 6, a non-evaporable getter is first getter in the image display region, the image display An image display device was prepared in which non-evaporable getters were arranged outside the region and also around the first getter.

[0163] Example 1 In this example, except that activated the non-evaporable getter 14 outside the image display area by the laser beam during the sealing step, was produced in the same manner as in Reference <br/> Example 6 An image in which a non-evaporable getter as a first getter is arranged in the image display area, and a non-evaporable getter is also arranged outside the image display area and around the first getter. A display device was created.

The comparative evaluation of the image display devices of Reference Example 6 to Example 1 and Reference Example A described above was performed. For evaluation, the image display devices of Reference Examples 6 to 1 and Reference Example A were subjected to simple matrix driving, the image display device was made to continuously emit light over the entire surface, and the change over time in luminance was measured.

As a result, although the initial luminances are different from each other, the image display devices of Reference Examples 6 to 1 are longer than the image display devices of Reference Example A in the same manner as the image display devices of Reference Examples 1 to 5. Even when the device was operated for a long time, almost no decrease in luminance was observed, and almost no variation in luminance between pixels was observed.

[0166]

The present invention described above, according to the present invention can provide a temporal method for manufacturing a smaller reduction in image display equipment of the electron emission characteristic of the electron source.

[0167] Further, the present invention can provide a temporal change method for producing a small image display equipment of (time reduction) of luminance.

[0168] Further, the present invention can provide a method for producing a temporal luminance less image display equipment of occurrence of variation in the image display area.

[Brief description of the drawings]

FIG. 1 is a schematic diagram illustrating an image display device according to a first embodiment.

FIG. 2 is a schematic view showing a surface conduction electron-emitting device.

FIG. 3 is a view showing an arrangement pattern of a phosphor and a black conductive material used in the present invention.

FIG. 4 is a schematic diagram showing an example of an electron source to which the present invention is applied, in which surface conduction electron-emitting devices are arranged in a simple matrix.

FIG. 5 is a schematic diagram illustrating an image display device according to a second embodiment.

FIG. 6 is a schematic diagram showing an image display device of Reference Example 8;

FIG. 7 is a schematic diagram showing an image display device of Reference Example 9;

FIG. 8 is a schematic diagram showing an image display device of Reference Example 11;
You.

FIG. 9 is a block diagram illustrating an example of a drive circuit for performing display in accordance with an NTSC television signal on the image display device of the present invention.

FIG. 10 is a plan view schematically showing an example of an electron source arranged in a simple matrix and formed by applying the present invention.

11 is a sectional view taken along the line BB ′ of FIG. 10 and FIG.
It is a -C 'sectional view.

FIG. 12 is a diagram showing a process of forming an electron source substrate in which the present invention is applied and a surface conduction electron-emitting device is arranged in a simple matrix.

FIG. 13 is a schematic view of a vacuum evacuation apparatus for performing a forming and activation step in the manufacturing process of the image display device of the present invention.

FIG. 14 is a schematic view showing a wiring method for forming and activating steps in the manufacturing process of the image display device of the present invention.

FIG. 15 is a schematic diagram showing voltage waveforms used in forming and activating steps in the manufacturing process of the image display device of the present invention.

FIG. 16 is a schematic diagram illustrating an image display device of Reference Example 2.

FIG. 17 is a schematic diagram illustrating a configuration of a face plate of the image display device of Reference Example 3;

FIG. 18 is a schematic diagram showing an image display device of Reference Example 4.

FIG. 19 is a schematic diagram showing an image display device of Reference Example 5.

FIG. 20 is a schematic diagram showing an image display device of Reference Example A.

FIG. 21 is a plan view schematically showing electron sources arranged in a simple matrix in Reference Example 6.

22 is a sectional view taken along line BB ′ of FIG. 21 and FIG.
It is a -C 'sectional view.

FIG. 23 is a schematic diagram showing an image display device of Reference Example 7.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 electron source substrate 2 rear plate 3 support frame 4 face plate 5 envelope 6 glass substrate 7 fluorescent film 8 metal back 9 non-evaporable getter 10 row selection terminal 11 signal input terminal 12 black conductive material 13 phosphor 14, 14 ', 15, 15a Getter 15b Getter film 16 Insulating layer 17 Heating wire 81 Image forming device 82 Scanning circuit 83 Control circuit 84 Shift register 85 Line memory 86 Synchronous signal separation circuit 87 Modulation signal generator Vx, Va DC voltage source 102 Wiring (X-direction wiring) 103 Lower wiring (Y-direction wiring) 104 Interlayer insulating layer 105, 106 Device electrode 107 Contact hole 108 Conductive film 109, 109a, 109b Non-evaporable getter 110 Electron emitting element 115 Insulating layer 116 Gap 122 Exhaust Tube 123 Vacuum container 124 Gate bar Bed 125 exhaust system 126 pressure gauge 127 Q-mass 128 gas introduction amount control means 129 material source 131 controller 132 pulse generator 133 ammeter 134 line selection device

Continued on the front page (72) Inventor Yasuhiro Hamamoto 3- 30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Kazuya Shigeoka 3- 30-2 Shimomaruko, Ota-ku, Tokyo Canon stock In-company (56) References JP-A-9-82245 (JP, A) JP-A-8-167392 (JP, A) JP-A-3-254042 (JP, A) JP-A-9-320493 (JP, A) (58) Fields surveyed (Int. Cl. ⁷ , DB name) H01J 29/94 H01J 9/39 H01J 31/12

Claims (16)

(57) [Claims] 1. An envelope configured by a member including a first substrate and a second substrate arranged at an interval, and an envelope arranged on the first substrate in the envelope. A method of manufacturing an image display device comprising an electron source, a fluorescent film and an acceleration electrode disposed on the second substrate, and a getter, wherein a plurality of members constituting the envelope are attached to each other. the a, first getter disposed in the image display area of the first image display area on the substrate or on the second substrate
And placed outside the image display area so as to surround the first getter
The method of manufacturing an image display device , wherein the activation process of the second getter among the obtained second getters is performed until the sealing step is completed. 2. The image display device according to claim 1, wherein the first getter is a non-evaporable getter .
Manufacturing method . Wherein the first getter is a non-evaporable getter, the second getter method for manufacturing an image display device according to claim 1, characterized in that the evaporable getter. Wherein said first getter and the second getter method for manufacturing an image display device according to claim 1, characterized in that both a non-evaporable getter. 5. The activation treatment of the non-evaporable getter, the image display apparatus according to any one of claims 2 to 4, characterized in that is carried out by applying a laser beam to said getter Production method. Wherein said first getter manufacturing method according to any one of claims 1 to 5, characterized in that disposed on the first substrate side. Wherein said first getter, according to any one of claims 1 to 5, characterized in that disposed on said first electron source arranged on a substrate provided with wiring Manufacturing method of an image display device. Wherein said first getter, in any one of claims 1 to 5, characterized in that disposed on the first electron source arranged on the substrate on the printed wiring comprising A manufacturing method of the image display device described in the above. Wherein said first getter manufacturing method according to any one of claims 1 to 5, characterized in that disposed on the second substrate side. Wherein said first getter, an image display according to any one of claims 1 to 5, characterized in that it is arranged on the second acceleration electrode disposed on the substrate Device manufacturing method . Wherein said first getter, in any one of claims 1 to 5, characterized in that disposed in the second black member on provided in the disposed fluorescent film on the substrate A manufacturing method of the image display device described in the above. 12. The method of claim 11, wherein the second getter claims 1 to 11, characterized in that disposed on the first substrate side
The method for manufacturing an image display device according to any one of the above. Wherein said second getter claims 1 to 11, characterized in that disposed on the second substrate side
The method for manufacturing an image display device according to any one of the above. 14. The electron source according to claim, characterized in that it comprises a plurality of electron-emitting devices wired in a matrix by a plurality of row wirings and a plurality of column wirings 1乃<br/> Itaru 13 Manufacturing method of the image display device according to any one of the above
Law . 15. The electron emission device, a manufacturing method of an image display apparatus according to claim 14, characterized in that a surface conduction electron-emitting device. 16. Further, according to claim 1, characterized in that after the sealing step, the activation process again the getter is performed
16. The method for manufacturing an image display device according to any one of items 15 to 15 .