JP2000091707A - Semiconductor device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high-quality II-VI compound semiconductor thin film by eliminating In diffusion to a II-VI compound semiconductor on a III-V compound semiconductor containing In, as well as a II-VI compound optical device which is small in element resistance and superior in electric property and efficiency on the III-V compound semiconductor containing In. SOLUTION: An In diffusion prevention layer 3 made of II-VI compound containing Te is inserted at least by one layer between a III-V compound semiconductor 2 containing In and a II-VI compound semiconductor thin film 4, so that In diffusion to the II-VI compound semiconductor thin film 4 is suppressed and the high-quality II-VI compound semiconductor thin film is obtained. Thus, a II-VI compound optical device which is superior in electric property and efficiency thanks its small element resistance can be manufactured on the III-V compound semiconductor 2 containing In.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention
The present invention relates to a semiconductor device including a substrate including a group V compound semiconductor layer and a group II-VI compound semiconductor thin film layer, and a method for manufacturing the same.

[0002]

2. Description of the Related Art A group III elements such as Al, Ga, and In and A
Semiconductor lasers having wavelengths in the infrared to red range and light emitting diodes in the yellow-green range have been put to practical use by III-V group compound semiconductors composed of V group elements such as s, P and Sb. However, in order to realize a semiconductor light emitting device at a wavelength shorter than this, a wider band gap is required, and the above III-
Realization is difficult with a group V compound semiconductor. Be, Mg,
Group II elements such as Mn, Zn, Cd, Hg and S, Se, Te
II-VI compound semiconductors composed of Group VI elements such as these have a relatively large band gap and can emit light at almost all wavelengths in the visible region. For this reason, it is particularly expected as a light emitting device material in a green region to an ultraviolet region, and is being actively researched and developed. In the production of this II-VI compound semiconductor thin film, it is difficult to obtain good quality II-VI bulk substrate crystals. Used as For example, the III
-When InP is used as the group V substrate, ZnCdSe,
If a mixed crystal such as ZnSeTe, MgZnCdSe, or MgZnSeTe is used, a double heterostructure can be produced under lattice matching conditions, and a light emitting device using these has been reported (for example, Proceedings of the 58th Annual Meeting of the Japan Society of Applied Physics). No. 1, page 277, 2a-V-1 1997
Year).

[0003]

However, when a II-VI compound semiconductor thin film is grown on an In-containing III-V compound semiconductor such as InP by a molecular beam epitaxial growth method (MBE method), There is a problem that In in the semiconductor diffuses into the II-VI group compound semiconductor thin film to cause deterioration of electric characteristics and deterioration of crystal quality.
(For example, Proceedings of the 58th JSAP Symposium No. 1 338 pages 3a-V-11 1997
Year). FIG. 13 shows an example of the layer structure of a group II-VI compound semiconductor thin film grown on an InP substrate by MBE using a conventional technique. Zn _0.48 Cd on InP substrate by MBE method
_When growing _0.52 Se, first, a III-V connected to a II-VI group compound semiconductor growth chamber via a vacuum transfer mechanism is used.
In the group compound semiconductor growth chamber, the natural oxide film on the surface of the InP substrate 5 is removed under P or As molecular beam, and then the InP buffer layer 6 is grown to restore the flatness of the substrate surface. Next, the InP substrate 5 was transported to a II-VI compound semiconductor growth chamber, and after the substrate temperature was stabilized at about 280 ° C., a Zn _0.48 Cd _0.52 Se layer 9 was grown. (For example, J. Cryst. Growth, 184/185, 450 pages, 1998). Photoluminescence (Photoholum) at room temperature of a Zn _0.48 Cd _0.52 Se thin film formed on an InP substrate using this conventional technique.
Inesence: PL) spectrum was measured. In addition to the band edge emission around 590 nm,
Light emission from a deep level was observed near m. In addition, this sample was subjected to secondary ion mass spectrometry (Secondary Ion).
As a result of analysis using Mass Spectroscopy (SIMS), a large amount of I was found in the ZnCdSe layer.
It has been clarified that n is diffused and causes light emission from a deep level near 750 nm. Such diffusion of In into the II-VI compound semiconductor thin film is not desirable for application, and causes an increase in device resistance and a decrease in luminous efficiency. Next, the MBE method is used to obtain In
FIG. 14 shows an example of the layer structure of the II-VI compound semiconductor thin film grown on the As substrate. When ZnSe _0.1 Te _0.9 is grown on an InAs substrate by MBE, first, InA is grown in a III-V compound semiconductor growth chamber connected to a II-VI compound semiconductor growth chamber via a vacuum transfer mechanism.
removing the native oxide film on the surface of the s substrate 13 under the As molecular beam;
Then, in order to restore the flatness of the substrate surface, InA
The s buffer layer 14 is grown. Next, the InAs substrate 1
3 was transported to the II-VI compound semiconductor growth chamber, and the substrate temperature was stabilized at about 280 ° C., and then the ZnSe _0.1 Te _0.9 layer 1 was transferred.
6 had grown. (For example, J. Cryst. Growth)
159, 54, 1995). For ZnSeTe on InAs, ZnC on the InP substrate is also used.
As in the case of dSe, it has been reported that In is easily diffused into the ZnSeTe layer.
ZnSe _0.1 Te _0.9 thin film 16 formed on As substrate 13
When the PL spectrum at room temperature was measured, emission from a deep level near 720 nm was observed in addition to the band edge emission near 570 nm. In addition, as a result of analyzing this sample using the SIMS method, a large amount of I was found in the ZnSeTe layer 16.
It was clarified that n was diffused and caused light emission from a deep level near 720 nm. Such diffusion of In into the II-VI compound semiconductor thin film is not desirable for application, and increases the device resistance, lowers the luminous efficiency,
This may cause the reliability to deteriorate.

[0004] The present invention has been made in view of the above-mentioned circumstances, and has been developed in view of the fact that the II-V compound semiconductor layer containing In contains
It is an object of the present invention to provide a semiconductor device having a high-quality II-VI compound semiconductor thin film by eliminating In diffusion into a -VI compound semiconductor thin film layer. Still another object is to provide a semiconductor device having low element resistance, high efficiency, and long life.

[0005]

To achieve the above object, the present invention employs the following constitution. The semiconductor device according to claim 1, wherein the III-V compound semiconductor layer containing In, the II-VI compound semiconductor thin film layer, and the II-VI compound containing Te formed between these semiconductor layers. A substrate including an In diffusion preventing layer made of a semiconductor is provided. The semiconductor device according to claim 2 includes In containing II.
A group IV-compound semiconductor layer, a group II-VI compound semiconductor thin film, and a layer formed between these semiconductor layers;
and a semiconductor surface layer made of a group III-V compound semiconductor containing a. The semiconductor device according to claim 3, wherein the group III-V compound semiconductor layer containing In, the group II-VI compound semiconductor thin film layer, and the group III-V containing no In are formed between these semiconductor layers. And a substrate including a semiconductor surface layer made of a compound semiconductor. The semiconductor device according to claim 4 is characterized in that:
A III-V compound semiconductor layer containing, a II-VI compound semiconductor thin film layer, and Sb formed between these semiconductor layers.
And a semiconductor surface layer made of a group III-V compound semiconductor containing: The semiconductor device according to claim 5, wherein a III-V compound semiconductor layer containing In, a II-VI compound semiconductor thin film layer, and a semiconductor formed between the semiconductor layers and made of a III nitride semiconductor. And a substrate including the layer. Claim 6
In the semiconductor device described in (1), the surface of the III-V compound semiconductor layer containing In on the side of the II-VI compound semiconductor thin film layer is a slightly inclined surface. 8. The semiconductor device according to claim 7, wherein the surface of the III-V compound semiconductor layer containing In that faces the II-VI compound semiconductor thin film layer is (111).
It is characterized in that it is the B side. The method of manufacturing a semiconductor device according to claim 8, wherein the surface of the In-containing III-V compound semiconductor layer is cleaned using a molecular beam containing a group V element and atomic hydrogen. A semiconductor device according to any one of claims 1 to 5 is manufactured.

[0006]

Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 shows a basic layer structure of a main part of the first embodiment according to the present invention. The semiconductor thin film of the present embodiment is obtained by forming a semiconductor substrate (a III-V compound semiconductor layer containing In) 1 in a III-V compound semiconductor growth chamber.
A III-V compound semiconductor 2 containing In is deposited thereon, transferred to a II-VI compound semiconductor growth chamber through a vacuum transfer mechanism, and a II-VI compound semiconductor containing Te is deposited thereon. It is obtained by inserting at least one In diffusion preventing layer 3 and then laminating a II-VI group compound semiconductor thin film layer 4. According to the study of the present inventors, in a semiconductor layer containing Te, compared to a semiconductor layer not containing Te,
It was found that the diffusion rate of In was significantly reduced. Therefore, after depositing the In diffusion preventing layer 3 made of the II-VI compound containing Te on the III-V compound semiconductor buffer layer 2 containing In, the II-VI compound semiconductor thin film layer 4 is formed.
Are laminated, the I-VI compound semiconductor thin film layer 4
The n concentration is greatly reduced, and the crystal quality is improved as compared with the conventional II-VI compound semiconductor thin film.

FIG. 2 shows the structure of the semiconductor laser according to the second embodiment. An n-type semiconductor layer 23 made of a III-V compound containing In, an In diffusion prevention layer 8 made of a II-VI compound containing Te, and an n-type made of a II-VI compound semiconductor on an n-type semiconductor substrate 22 Cladding layer 24, active layer 25 made of II-VI compound semiconductor, p-layer made of II-VI compound semiconductor
A mold clad layer 26 and a p-type contact layer 27 made of a II-VI group compound semiconductor are sequentially formed. The semiconductor layer is
Crystal growth can be performed by the MBE method. An insulating film 28 made of SiO ₂ having a stripe-shaped opening is formed on the p-type contact layer 27, and the p-electrode 2 in contact with the p-type contact layer 27 through the opening is formed on the insulating film 28.
9 are provided. An n-electrode 21 is provided on the back surface of the n-type semiconductor substrate 22. After forming the electrodes, a laser cavity surface is formed by cleavage. n-type II
The -VI compound semiconductor layer is obtained by doping with chlorine or the like. The p-type II-VI group compound semiconductor layer can be obtained by doping with nitrogen or the like. The structure of the semiconductor laser according to the present embodiment is such that the II-VI compound semiconductor layer 4 of the first embodiment is partially replaced by an n-type cladding layer 24 made of a II-VI compound semiconductor and an active layer made of a II-VI compound semiconductor. The layer 25 is replaced with a p-type cladding layer 26 made of a II-VI compound semiconductor and a p-type contact layer 27 made of a II-VI compound semiconductor.
1 and the like. According to the study of the present inventors, in a semiconductor layer containing Te, Te
It was found that the diffusion rate of In was significantly lower than that in the semiconductor layer containing no. Therefore, when the In diffusion preventing layer 3 made of the II-VI compound containing Te is deposited on the n-type semiconductor layer 23 made of the III-V compound containing In, the II-VI compound semiconductor , An active layer 25 made of a II-VI compound semiconductor, a p-type clad layer 26 made of a II-VI compound semiconductor, and a p-type contact layer 27 made of a II-VI compound semiconductor. The In concentration is greatly reduced. Accordingly, the II-VI compound semiconductor laser of the present invention
-Compared with Group VI compound semiconductor lasers, it has improved electrical characteristics and operates at low voltage, has improved luminous efficiency of the active layer, has a low threshold and high output, and suppresses generation and growth of defects for a long time. Stable operation was achieved. In the present embodiment, as an example, the active layer is a single-layer II-VI compound semiconductor layer. However, the present invention is not limited to this, and a quantum well, a strained quantum well, or the like may be used. Further, a light guide layer may be provided between the active layer and the clad layer. Further, in the present embodiment, the II-VI compound semiconductor laser has been described as an example. However, even when applied to other optical devices and electronic devices such as light-emitting diodes, optical modulators, light-receiving elements, and transistors, the electrical characteristics can be improved or improved. There are effects such as higher efficiency and longer life. Further, the present invention can be applied to a case where a II-VI compound semiconductor is used as a buried layer of an optical device or an electronic device made of a III-V compound semiconductor, and has effects such as improvement in voltage-current characteristics.

FIG. 3 shows an example of a layer structure of a main part of the semiconductor device of the third embodiment. First, in a III-V compound semiconductor growth chamber, an InP substrate (In
(III-V compound semiconductor layer containing), the native oxide film on the surface was removed, and then an InP buffer layer 6 was grown. The substrate is transferred to a group II-VI compound semiconductor growth chamber via a vacuum transfer mechanism, a ZnCdSe buffer layer 7 having a thickness of about 10 nm is deposited, and an In diffusion preventing layer 8 made of ZnSeTe is laminated thereon. Then, a Zn _0.48 Cd _0.52 Se layer (II-VI compound semiconductor thin film layer) 9 having a thickness of about 1 μm and lattice-matched to InP was grown. According to the inventor's research,
In a semiconductor layer containing Te and Be or Mg or Zn, a semiconductor layer containing no Te or containing Te but containing Be or M
It was found that the diffusion rate of In was significantly lower than in the semiconductor layer containing no g or Zn. Therefore, ZnS
Since the diffusion rate of In is extremely slow in the In diffusion preventing layer 8 made of eTe, the amount of In diffusion into the ZnCdSe layer 9 laminated thereon can be greatly reduced. Also, In
When a mixed crystal containing Te is formed on the P buffer layer 6, In
And Te are easily combined to form a three-dimensional nucleus, so that a ZnCdSe buffer layer 7 is effective for obtaining a film with good flatness. Considering the crystal quality of the II-VI group compound semiconductor layer laminated thereon, the thickness of the ZnCdSe buffer layer 7 is desirably equal to or less than the critical thickness determined by the amount of lattice mismatch with the InP substrate. Most preferably, the composition is Zn _0.48 Cd _0.52 Se which lattice-matches with the substrate. Further, an In diffusion preventing layer 8 made of ZnSeTe
Considering the crystal quality of the II-VI group compound semiconductor layer laminated thereon, it is desirable that the layer thickness is not more than the critical thickness determined by the amount of lattice mismatch with respect to the InP substrate.
Most preferably, the composition is ZnSe _0.54 Te _0.46 which lattice-matches with the P substrate. Note that ZnCdSe and ZnSe
The critical film thickness of Te changes depending on the magnitude of the lattice mismatch with the InP substrate, for example, Matthews and Blak.
It can be calculated by the mechanical equilibrium theory published in J. Cryst. Growth, vol. 27, p. 118, 1974, studied by Eslee. When the PL spectrum at room temperature of the ZnCdSe layer 9 on the InP substrate manufactured in this manner was measured, the emission intensity at the band edge near 590 nm was about 10% lower than that of ZnCdSe manufactured on the InP substrate using the conventional technique. The light emission from a deep level near 750 nm decreased by a factor of five. Further, as a result of analyzing this sample using the SIMS method, it was found that the amount of In diffused into the ZnCdSe layer 9 was reduced to about 1/10 of the conventional level, and the crystal quality was improved. .

FIG. 4 shows the structure of a semiconductor laser according to a fourth embodiment. On an n-type InP substrate 30, an n-type InP buffer layer 31, a ZnCdSe buffer layer, an In diffusion preventing layer 8 made of ZnSeTe, an n-type MgZnCdSe cladding layer 32, a ZnCdSe active layer 33, a p-type MgZnCdS
e clad layer 34, p-type ZnSeTe contact layer 35
Are sequentially formed. The semiconductor layer can be grown by MBE. This p-type ZnSeTe contact layer 3
An insulating film 28 made of SiO ₂ having a stripe-shaped opening is formed on 5, and a p-electrode 29 in contact with the p-type ZnSeTe contact layer 35 through the opening is provided on the insulating film 28. . Further, the n-type InP substrate 2
An n-electrode 21 is provided on the back surface of 2. After forming the electrodes, a laser cavity surface is formed by cleavage. n
Type MgZnCdSe is obtained by doping with chlorine or the like, and p-type MgZnCdSe is obtained by doping with nitrogen or the like. The structure of the semiconductor laser of the present embodiment is the same as that of the third embodiment, that is, Zn _0.48 Cd _0.52 S
The part of the e layer 9 is made of a II-VI compound semiconductor thin film n-type MgZn
CdSe cladding layer 32, ZnCdSe active layer 33, p
MgZnCdSe cladding layer 34, p-type ZnSeTe
Replaced with contact layer 35, insulating film 28, p electrode 2
9, a structure obtained by forming the n-electrode 21 and the like. According to the study of the present inventor, in a semiconductor layer containing Te and Be or Mg or Zn, compared to a semiconductor layer not containing Te or a semiconductor layer containing Te but not containing Be, Mg or Zn. , In diffusion rate was significantly reduced. Therefore, since the diffusion rate of In in the In diffusion preventing layer 8 made of ZnSeTe is extremely low, the n-type MgZnCdSe cladding layer 32, the ZnCdSe active layer 32, and the p-type MgZnSeTe
The diffusion of In into the cladding layer 34 and the p-type ZnSeTe contact layer 35 is greatly reduced. When a mixed crystal containing Te is formed on the InP buffer layer 6, the combination of In and Te easily forms a three-dimensional nucleus. Therefore, the ZnCdSe buffer layer 7 is effective for obtaining a film with good flatness. is there. Considering the crystal quality of the II-VI compound semiconductor layer laminated thereon, the thickness of the ZnCdSe buffer layer 7 is desirably equal to or less than the critical thickness determined by the amount of lattice mismatch with the InP substrate. Most preferably, the composition is Zn0.48Cd0.52Se which lattice-matches with the substrate. Also, considering the crystal quality of the II-VI group compound semiconductor layer stacked thereon, the thickness of the In diffusion preventing layer 8 made of ZnSeTe should be equal to or less than the critical thickness determined by the amount of lattice mismatch with the InP substrate. It is most desirable that the composition be ZnSe _0.54 Te _0.46 which has a lattice matching with the InP substrate. Note that ZnCdSe and ZnSeTe
Varies depending on the magnitude of lattice mismatch with the InP substrate, for example, Matthews and Blakes
J. Cryst. Growth, 27, reviewed by Lee
Page 118 It can be calculated by the mechanical equilibrium theory published in 1974. The II-VI compound semiconductor laser of the present invention having the above-described structure has improved electric characteristics and operates at a lower voltage than the conventional II-VI compound semiconductor laser, and has improved light emission efficiency of the active layer. The threshold and high output were obtained, and the generation and growth of defects were suppressed, and stable operation was possible for a long time. In the present embodiment, as an example, the active layer is formed of a single-layer Zn.
Although the CdSe layer was used, the present invention is not limited to this.
Other II-VI compound semiconductors such as dSe, ZnCdSe / MgZnCdSe quantum well, strained quantum well, and MgZnSeTe may be used. Further, a light guide layer may be provided between the active layer and the clad layer. In the present embodiment,
As an example, a group II-VI compound semiconductor laser has been described. However, even when applied to other optical devices and electronic devices such as light-emitting diodes, optical modulators, light-receiving elements, transistors, and the like, the electrical characteristics can be improved, the efficiency can be improved, and This has the effect of extending the life. The present invention is also applicable to the case where a II-VI group compound semiconductor is used as a buried layer of an optical device or an electronic device made of a III-V group compound semiconductor, and has effects such as improvement in voltage-current characteristics.

In the fifth embodiment, the In diffusion preventing layer 8 in the third embodiment is changed from ZnSeTe to BeZnT.
e. According to the study of the present inventors, Te and Be
Alternatively, it has been found that the effect of suppressing the In diffusion of the semiconductor layer containing Mg or Zn increases as the content of Mg is larger than that of Zn and the content of Be is larger than that of Mg. Therefore, when BeZnTe is used as the In diffusion preventing layer, Z in the second embodiment can be reduced.
Compared to the case where nSeTe is used as the In diffusion preventing layer,
The diffusion of In into the II-VI compound semiconductor thin film formed on the In diffusion preventing layer can be further reduced. Also, BeZ
Considering the crystal quality of the II-VI compound semiconductor layer laminated thereon, the thickness of the In diffusion prevention layer 8 made of nTe
It is desirable that the thickness be equal to or less than the critical film thickness determined by the amount of lattice mismatch with the InP substrate, and it is most desirable that the composition be Be _0.49 Zn _0.51 Te that lattice-matches with the InP substrate.
The critical film thickness of BeZnTe changes depending on the magnitude of lattice mismatch with the InP substrate.
ws and Blakeslee, J. Cryst. Gro.
wth) Volume 27, page 118, can be calculated by the mechanical equilibrium theory published in 1974. When the PL spectrum of the ZnCdSe layer 9 on the InP substrate thus manufactured was measured at room temperature, the emission intensity at the band edge near 590 nm was Z.
It increased about three times compared with nCdSe, and the emission intensity from a deep level near 750 nm decreased to 1/10. Also,
As a result of analyzing this sample using the SIMS method, ZnCd
The amount of In diffused into the Se layer 9 is about 1/30 of the conventional amount.
And the crystal quality was improved.

In the sixth embodiment, the In diffusion preventing layer 8 in the third embodiment is changed from ZnSeTe to BeMg.
Changed to Te. As described above, according to the study of the present inventors, the effect of suppressing the In diffusion of a semiconductor layer containing Te and Be or Mg or Zn is as follows.
It was found that the effect was increased as the content of the compound was increased. Therefore, if BeMgTe is used as the In diffusion preventing layer,
II-VI compound semiconductor thin film formed on the In diffusion prevention layer, compared with the case where ZnSeTe of the embodiment is used as the In diffusion prevention layer or the case where BeZnTe of the third embodiment is used as the In diffusion prevention layer. Diffusion of In can be further reduced. In addition, considering the crystal quality of the II-VI group compound semiconductor layer laminated thereon, the thickness of the In diffusion preventing layer made of BeMgTe should be equal to or less than the critical thickness determined by the amount of lattice mismatch with the InP substrate. It is desirable that the composition should be Be _0.7 Mg _0.3 Te which lattice-matches with the InP substrate. Note that the critical film thickness of BeMgTe changes depending on the magnitude of lattice mismatch with the InP substrate. For example, Journal of Crystal Growth (J. Cryst. Growth), Vol. It can be calculated by the dynamic equilibrium theory described. ZnCdS on the InP substrate thus manufactured
The PL spectrum of the e-layer 9 at room temperature was measured.
The emission intensity at the band edge near 90 nm increased about 5 times as compared with ZnCdSe formed on the InP substrate using the conventional technique, and the emission intensity from a deep level near 750 nm decreased to 1/20. Further, as a result of analyzing this sample by using the SIMS method, it was found that the amount of In diffused into the ZnCdSe layer 9 was reduced to about 1/100 of the conventional one, and the crystal quality was improved. . The above first to sixth
In an embodiment of the invention, the compound I comprises a II-VI compound containing Te.
ZnSeTe, BeZnTe, B
The case where eMgTe is used has been described.
Instead of II-VI compound semiconductors, Be,
Containing Mg, Zn, Cd, etc., containing Te as a group VI element and simultaneously containing S, Se, etc., for example, MgZnSeTe, M
Similar effects can be obtained by using gZnSTe or the like.

In a seventh embodiment, a case where the In diffusion preventing layer made of a II-VI compound containing Te is a superlattice will be described. As a specific embodiment of the present invention, Be
The layer structure of a II-VI compound semiconductor thin film on an InP substrate using a Te / ZnTe superlattice layer as an In diffusion preventing layer is as follows.
This is completed by replacing the In diffusion preventing layer 8 made of ZnSeTe in FIG. 2 with an In diffusion preventing layer made of a BeTe / ZnTe superlattice layer. First, the natural oxide film on the surface of the InP substrate 5 was removed under a P molecular beam irradiation in a group III-V compound semiconductor growth chamber, and then an InP buffer layer 6 was grown. This substrate is transferred to the II-
Transferred to group VI compound semiconductor growth chamber, Z of about 10 nm thickness
After depositing the nCdSe buffer layer 7, the BeTe /
An In diffusion preventing layer 8 made of a ZnTe superlattice was laminated, and a Zn _0.48 Cd _0.52 Se layer 9 having a thickness of about 1 μm was grown _thereon . According to the study of the present inventor, when the In diffusion preventing layer made of the II-VI group compound containing Te is formed of a superlattice, the diffusion rate of In is further reduced as compared with the case of a single film. I understood. The thickness and the number of periods of the In diffusion preventing layer 8 made of a BeTe / ZnTe superlattice are determined by the amount of lattice mismatch with the InP substrate in consideration of the crystal quality of the II-VI group compound semiconductor layer stacked thereon. It is desirable that the thickness be equal to or less than the critical film thickness, and it is most desirable that the lattice constant of the InP substrate and the average lattice constant of the superlattice layer be equal. Specifically, in the case of a BeTe / ZnTe superlattice, there is a -4.18% lattice mismatch between BeTe and InP, while +4.0 between ZnTe and InP.
Since there is a lattice mismatch of 1%, it is desirable that both of the film thicknesses in this case be 1 nm or less. Further, for example, when BeTe is 0.5 nm and ZnTe is 5, BeT
The average strain amount of the e / ZnTe superlattice is about -0.09%, and the superlattice does not exceed the critical film thickness if the number of periods is at most about 150 periods. The critical thickness of each layer and the critical thickness of the entire superlattice vary depending on the magnitude of lattice mismatch with the InP substrate. For example, Matthews and Blake
It can be calculated by the theory of mechanical equilibrium published in J. Cryst. Growth, vol. 27, p. 118, 1974, studied by Slee. When the PL spectrum of the ZnCdSe layer 9 on the InP substrate thus manufactured was measured at room temperature, the emission intensity at the band edge near 590 nm was about 7 times that of the ZnCdSe formed on the InP substrate using the conventional technique. The emission intensity from a deep level near 750 nm decreased to 1/30. In addition, this sample was
As a result of analysis using the method, it was found that the amount of In diffused into the ZnCdSe layer 9 was reduced to about 1/200 of the conventional one, and the crystal quality was improved. In the above-described embodiment, the case where a BeTe / ZnTe superlattice is used as the In diffusion prevention layer made of a II-VI compound containing Te made of a superlattice layer has been described.
Containing Mg, Zn, Cd, etc., and S, Se,
A superlattice layer containing at least one layer containing Te and containing Te, for example, a ZnSe / ZnTe superlattice or BeT
The same effect is obtained by using the e / MgTe superlattice. Also, each layer of the superlattice does not need to be a binary compound, for example Be
It may be a ternary or higher mixed crystal such as ZnTe or BeMgZnTe.

FIG. 5 shows a basic layer structure of a main part of the semiconductor device of the eighth embodiment. The semiconductor thin film of the present embodiment is obtained by forming In on a semiconductor substrate (a III-V compound semiconductor layer containing In) 1 in a III-V compound semiconductor growth chamber.
Is deposited, and at least one semiconductor surface layer 10 containing Al or Ga is further formed thereon, and then transferred to a II-VI compound semiconductor growth chamber via a vacuum transfer mechanism, and -It is obtained by laminating the group VI compound semiconductor thin film layer 4. According to the inventor's research,
Since the bonding force between the group III element and the group V element tends to increase in the order of In <Ga <Al, at least one semiconductor surface layer containing Al or Ga is provided on the III-V compound semiconductor containing In. In this case, in the semiconductor surface layer containing Al or Ga, the bonding of elements is hard to be broken, and the diffusion rate of In becomes extremely slow, compared with the case where the conventional semiconductor surface layer containing Al or Ga is not provided. It was found that the diffusion amount of In into the II-VI compound semiconductor thin film laminated thereon was significantly reduced. Further, Al or G
a when the semiconductor surface layer containing a contains In.
Alternatively, the bond between In and the group V element tends to be difficult to be broken due to the presence of Ga, and this tendency becomes stronger as the composition ratio of Al or Ga to In in the semiconductor surface layer becomes higher, and the upper layer II It was found that the amount of In diffused into the group-VI compound semiconductor thin film was reduced. Therefore, on the semiconductor surface layer containing Al or Ga, II-VI
When the group IV compound semiconductor thin film 4 is laminated, the In concentration in the group II-VI compound semiconductor thin film 4 is greatly reduced, and the conventional II-VI compound semiconductor thin film 4 is removed.
The crystal quality was improved compared to group VI compound semiconductor thin films.

FIG. 6 shows an example of the layer structure of the main part of the semiconductor device of the ninth embodiment. First, in a III-V compound semiconductor growth chamber, an InP substrate (In
(III-V compound semiconductor layer containing GaN) 5) The natural oxide film on the surface was removed, an InP buffer layer 6 was grown, and a semiconductor surface layer 11 made of AlGaInAs was deposited thereon. The substrate was transferred to a II-VI compound semiconductor growth chamber via a vacuum transfer mechanism, and a Zn-containing layer having a thickness of about 1 μm was placed thereon.
_0.48 Cd _0.52 2Se layer (II-VI group compound semiconductor thin film layer)
9 grew. According to the study of the present inventor, since the bonding force between the group III element and the group V element tends to increase in the order of In <Ga <Al, Al or Ga is formed on the III-V compound semiconductor containing In. In the case where at least one semiconductor surface layer containing Al or Ga is provided, the bonding of elements is hard to be cut in the semiconductor surface layer containing Al or Ga, and the diffusion rate of In becomes extremely slow. II-VI to be stacked on top compared to when not provided
It was found that the amount of In diffused into the group III compound semiconductor thin film was significantly reduced. Further, also when the semiconductor surface layer containing Al or Ga contains In, the bond between In and the group V element tends to be hard to be cut off due to the presence of Al or Ga, and this tendency is found in the semiconductor surface layer. It was found that the higher the composition ratio of Al or Ga to In, the higher the intensity, and the lower the diffusion amount of In into the overlying II-VI compound semiconductor thin film. Further, as the semiconductor surface layer for suppressing the diffusion of In, it is more effective not to include In and P at the same time, because the bonding force between the group III element and the group V element is strengthened. Therefore, when at least one semiconductor surface layer made of AlGaInAs is provided on the III-V group compound semiconductor containing In, the semiconductor layer is stacked thereon as compared with the case where the conventional semiconductor surface layer made of AlGaInAs is not provided. It was found that the diffusion amount of In into the II-VI compound semiconductor thin film was significantly reduced. Also, AlG
Considering the crystal quality of the II-VI compound semiconductor layer laminated thereon, the thickness of the semiconductor surface layer 11 made of aInAs is desirably equal to or less than the critical thickness determined by the amount of lattice mismatch with the InP substrate 5. the composition is lattice-matched to InP _{Al x Ga y in 1-xy} as ( where x, y are, 0 ≦ x ≦ 1,
0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1, 6.77x + 6.9y = 3.23. ) Is most desirable. AlGa on InP
The critical film thickness of InAs changes depending on the magnitude of lattice mismatch with the InP substrate, for example, Matthews and Bl.
J. Cryst. Growth reviewed by Akeslee
27, page 118, can be calculated by the mechanical equilibrium theory published in 1974. When the PL spectrum at room temperature of the ZnCdSe layer 9 on the InP substrate manufactured in this manner was measured, the emission intensity at the band edge near 590 nm showed that the ZnCdSe layer 9 on the InP substrate was manufactured using the conventional technique.
And the emission from a deep level near 750 nm decreased to 1/5. In addition, this sample was
As a result of analysis using the method, it was found that the amount of In diffused into the ZnCdSe layer 9 was reduced to about 1/10 of the conventional level, and the crystal quality was improved.

In the tenth embodiment, the semiconductor surface layer 11 containing Al or Ga in the ninth embodiment is
GaInAs was changed to AlInAs. As described above, according to the study of the present inventor, the bonding force between the group III element and the group V element tends to increase in the order of In <Ga <Al, and the bonding force of the semiconductor surface layer containing Al or Ga tends to increase. It was found that the effect of preventing the diffusion of Al was stronger as the composition ratio of Al was larger. Therefore, when AlInAs is used as the semiconductor surface layer provided on the group III-V compound semiconductor containing In, the AlGaInAs layered on the semiconductor surface layer is more thicker than when AlGaInAs of the seventh embodiment is used as the semiconductor surface layer. -The diffusion amount of In into the group VI compound semiconductor thin film could be further reduced. Further, considering the crystal quality of the II-VI compound semiconductor layer laminated thereon, the thickness of the semiconductor surface layer 10 made of AlInAs should be equal to or less than the critical thickness determined by the amount of lattice mismatch with the InP substrate. Desirably, a composition Al _0.48 In _0.52 A lattice-matched with InP.
s is most desirable. AlInAs on InP
Varies depending on the magnitude of lattice mismatch with the InP substrate, for example, Matthews and Blakes
J. Cryst. Growth, 27, reviewed by Lee
Page 118 It can be calculated by the mechanical equilibrium theory published in 1974. Z on the InP substrate thus manufactured
When the PL spectrum of the nCdSe layer 9 at room temperature was measured, the emission intensity at the band edge near 590 nm was increased about twice as large as that of ZnCdSe formed on the InP substrate using the conventional technique, and the deep level near 750 nm was obtained. The emission from was reduced to 1/10. In addition, as a result of analyzing this sample using the SIMS method, it was found that the amount of In diffused into the ZnCdSe layer 9 was reduced to about 1/20 of the conventional one, and the crystal quality was improved. .

In the eleventh embodiment, a case where a semiconductor surface layer containing no In is used will be described. As a specific embodiment of the present invention, the layer structure of the group II-VI compound semiconductor thin film on the InP substrate provided with the semiconductor surface layer made of AlP is such that the semiconductor surface layer 11 made of AlGaInAs in FIG. It is completed by changing to a semiconductor surface layer. First of all, III-
In a group V compound semiconductor growth chamber, under P molecular beam irradiation, In
The natural oxide film on the surface of the P substrate (III-V compound semiconductor layer containing In) 5 was removed, an InP buffer layer 6 was grown, and a semiconductor surface layer made of AlP was deposited thereon. The substrate was transferred to a II-VI compound semiconductor growth chamber via a vacuum transfer mechanism, and a Zn-containing layer having a thickness of about 1 μm was placed thereon.
_0.48 Cd _0.52 Se layer (II-VI compound semiconductor thin film layer) 9
Grew. According to the study of the present inventor, III containing In
When at least one semiconductor surface layer containing no In is provided on the group V compound semiconductor, the semiconductor layer is stacked on the semiconductor surface layer as compared with the case where the conventional semiconductor surface layer containing no In is not provided. It was found that the diffusion of In into the II-VI compound semiconductor thin film was significantly reduced. Further, considering the crystal quality of the II-VI compound semiconductor layer laminated thereon, the thickness of the semiconductor surface layer 10 made of AlP should be equal to or less than the critical thickness determined by the amount of lattice mismatch with the InP substrate. desirable. However, in the case of AlP, there is a lattice mismatch of about -6.9% with InP. In this case, the critical film thickness is 0.3 nm or less, that is, 1 atomic layer or less. There is a possibility that it will not function as a semiconductor surface layer for suppressing diffusion. Therefore, it is desirable that the practical AlP layer thickness be about 1 nm. When the PL spectrum at room temperature of the ZnCdSe layer 9 on the InP substrate manufactured in this manner was measured, the emission intensity at the band edge near 590 nm showed that the ZnCdSe layer 9 on the InP substrate was manufactured using the conventional technique.
The light emission from a deep level near 750 nm was reduced by a factor of about 10 as compared with the case of FIG. In addition, this sample was
As a result of analysis using the S method, it was found that the amount of In diffused into the ZnCdSe layer 9 was reduced to about 1/30 of the conventional level, and the crystal quality was improved. In the above embodiment, the semiconductor surface layer containing no In is made of Al
Although the case where P was used was described, AlP was used instead of AlP.
As, AlSb, GaP, GaAs, GaSb, AlA
sSb, GaAsSb, AlPSb, GaPSb, Ga
AlAs, GaAlP, AlAsP, GaAsP, Ga
AlAsSb, GaAlPSb, GaAlAsP or the like may be used, and the diffusion of In is suppressed as in the above embodiment.

FIG. 7 shows a basic layer structure of a main part of the twelfth embodiment. The semiconductor thin film of the present embodiment has a III-
A buffer layer 2 containing In is deposited on a semiconductor substrate (a III-V compound semiconductor layer containing In) 1 in a group V compound semiconductor growth chamber, and at least one semiconductor surface layer 12 containing Sb is further formed thereon. After that, this is transferred to a II-VI compound semiconductor growth chamber via a vacuum transfer mechanism,
It is obtained by laminating II-VI compound semiconductor thin film layers 4. Rioux et al. Reported that Z grown on an InP substrate.
The diffusion of In into nSe was examined, and it was found that when Sb was supplied on the InP substrate by several atomic layers and ZnSe was grown thereon, the amount of In diffused into ZnSe decreased. It has been reported that the lattice constant of the InP substrate surface supplied with Sb changes, and a large number of crystal defects are generated in ZnSe, so that high quality ZnSe cannot be grown (Journal of Electron Spectroscopy and Relevant Phenomena).
(J. Electron Spectroscopy
and Related Phenomena) 6
8, p. 719, 1994). The inventor has made numerous studies and completed the present invention. According to the study of the present inventor, it has been found that Sb is contained on a III-V compound semiconductor containing In and the lattice constant in the interface direction is III containing In.
-Forming at least one semiconductor surface layer corresponding to the group V compound semiconductor, and depositing a II-VI compound semiconductor thin film thereon, the lattice constant of the II-VI compound semiconductor thin film also contains In It has been found that since the lattice constant of the III-V compound semiconductor coincides with that of the III-V compound semiconductor, the generation of crystal defects is small, good crystallinity can be maintained, and the diffusion of In into the II-VI compound semiconductor thin film decreases. Therefore, III- containing the Sb of the present invention and having a lattice constant in the interface direction containing In.
When the II-VI compound semiconductor thin film 4 is laminated on the semiconductor surface coincident with the group V compound semiconductor, the diffusion of In is significantly reduced without generating crystal defects in the II-VI compound semiconductor thin film 4. As a result, the crystal quality was dramatically improved as compared with the conventional II-VI compound semiconductor thin film.

FIG. 8 shows an example of the layer structure of the main part of the thirteenth embodiment. First, a natural oxide film on the surface of an InAs substrate (a III-V compound semiconductor layer containing In) 13 is removed in a III-V compound semiconductor growth chamber under As molecular beam irradiation, and then an InAs buffer layer 14 is grown. Then, a semiconductor surface layer 15 made of InPSb was deposited thereon. The substrate is transferred to a II-VI compound semiconductor growth chamber via a vacuum transfer mechanism, and an InAs layer having a thickness of about 1 μm is placed thereon.
A ZnSe _0.1 Te _0.9 layer (II-VI compound semiconductor thin film layer) 16 lattice-matched to the substrate was grown. According to the study of the present inventor, when at least one semiconductor surface layer containing Sb is provided on a III-V group compound semiconductor containing In, compared with the conventional case where the semiconductor surface layer containing Sb is not provided. And the diffusion amount of In into the II-VI compound semiconductor thin film laminated thereon is reduced, and Rioux et al. Disclose a journal of electron spectroscopy and related phenomena (J. Elect.).
ron Spectroscopy and Rela
ted Phenomena) 68 pages 719 pages 1
It was found that the occurrence of crystal defects as reported in 994 was reduced. Also, considering the crystal quality of the II-VI compound semiconductor layer laminated thereon, the thickness of the semiconductor surface layer 15 made of InPSb should be equal to or less than the critical thickness determined by the amount of lattice mismatch with the InAs substrate. Most preferably, the composition is InP _0.69 Sb _0.31 which lattice-matches with InAs. The critical thickness of InPSb on InAs varies depending on the magnitude of lattice mismatch with the InAs substrate, for example, Matthews and Blakesl.
Journal of Crystal reviewed by ee
Grouse (J. Cryst. Growth) 27 Vol. 1
Page 18 It can be calculated by the mechanical equilibrium theory published in 1974. Z on the InAs substrate thus manufactured
When the PL spectrum of the nSeTe layer 16 at room temperature was measured, the emission intensity at the band edge near 570 nm increased about twice as large as that of ZnSeTe formed on the InAs substrate by using the conventional technique, and the deep level near 720 nm. The emission from was reduced to about 1/10. In addition, this sample was
As a result of analysis using the method, it was found that the amount of In diffused into the ZnSeTe layer 16 was reduced to 1/20 of that of the conventional method, and that the crystal quality was greatly improved.

In the fourteenth embodiment, the semiconductor surface layer 15 of the thirteenth embodiment is formed from InPSb to GaAs.
Changed to Sb. According to the research of the present inventors, when the semiconductor surface layer containing Sb contains Al or Ga, the effect of reducing the diffusion of In into the II-VI compound semiconductor thin film laminated thereon is greatly increased. , Rioux et al., Journal of Electron Spectroscopy and Related Phenomena (J. Electron)
Spectroscopy andRelated
Phenomena) 68, p. 719 It was found that the occurrence of crystal defects as reported in 1994 was reduced. The thickness of the semiconductor surface layer 15 made of GaAsSb should be equal to or less than the critical thickness determined by the amount of lattice mismatch with the InAs substrate in consideration of the crystal quality of the II-VI compound semiconductor layer laminated thereon. Desirably, I
Most preferably, the composition is GaAs _0.08 Sb _0.92 which lattice-matches with nAs. The critical film thickness of GaAsSb on InAs varies depending on the magnitude of the lattice mismatch with the InAs substrate, for example, Matthews and Blakesle.
e, Journal of Crystal Growth 27, 11
Page 8 It can be calculated by the mechanical equilibrium theory published in 1974. Zn on the InAs substrate thus manufactured
When the PL spectrum of the SeTe layer 16 at room temperature was measured, the emission intensity at the band edge near 570 nm was increased about 10 times as compared with ZnSeTe formed on the InAs substrate using the conventional technique, and the deep level near 720 nm was obtained. From the light was reduced to about 1/100. In addition, this sample was
As a result of analysis using the S method, it was found that the amount of In diffused into the ZnSeTe layer 16 was reduced to 1/1000 of the conventional level, and that the crystal quality was significantly improved. In the above embodiment, the case where GaAsSb is used as an example of a semiconductor surface layer containing Al or Ga and Sb has been described. However, instead of GaAsSb, Al, Ga, and In are included as Group III elements, and as Group V elements. Is P, As,
AlAsSb, AlPSb, AlInAs containing Sb and containing at least either Al or Ga and Sb
Sb, AlInPSb, GaPSb, GaInPSb,
GaInAsSb, AlGaPSb, AlGaAsSb
May be used, and the diffusion of In is suppressed as in the above embodiment. Further, considering the crystal quality of the II-VI group compound semiconductor layer laminated thereon, the thickness of the semiconductor surface layer containing Al, Ga and Sb is determined by the critical thickness determined by the amount of lattice mismatch with respect to the InAs substrate. The composition is desirably set to the following, and most desirably, the composition is lattice matched with the InAs substrate. In addition, the above Al or Ga and In on InAs
The critical film thickness of the semiconductor surface layer containing b varies depending on the magnitude of lattice mismatch between the semiconductor surface layer and the InAs substrate.
hews and Blakeslee, the Journal of Crystal Grouse (J. Cryst.
(Growth) Vol. 27, page 118, can be calculated by the mechanical equilibrium theory published in 1974.

FIG. 9 shows an example of the layer structure of the main part of the fifteenth embodiment. First, in a III-V compound semiconductor growth chamber, an InP substrate (III containing In) was irradiated under P molecular beam irradiation.
-V group compound semiconductor layer) 5 Remove the natural oxide film on the surface,
Subsequently, an InP buffer layer 6 is grown, and GaI
A semiconductor surface layer 17 of nPSb was deposited. The substrate was transferred to a II-VI compound semiconductor growth chamber via a vacuum transfer mechanism, and a Zn _0.48 Cd _0.52 layer having a thickness of about 1 μm was placed thereon.
An Se layer (II-VI compound semiconductor thin film layer) 9 was grown.
According to the study of the present inventors, when at least one semiconductor surface layer containing Al or Ga and containing Sb is provided on a III-V compound semiconductor containing In, conventional Al or G
The diffusion amount of In into the II-VI group compound semiconductor thin film laminated thereon is significantly reduced as compared with the case where the semiconductor surface layer containing a and Sb is not provided, and
Rioux et al. Published the Journal of Electron Spectroscopy and Relaunched Phenomena
(J. Electron Spectroscopy
and Related Phenomena) 6
8, page 719, it was found that the occurrence of crystal defects as reported in 1994 was reduced. In addition, GaI
Considering the crystal quality of the II-VI group compound semiconductor layer laminated thereon, the thickness of the semiconductor surface layer 17 made of nPSb is desirably not more than the critical thickness determined by the amount of lattice mismatch with the InP substrate. Composition Ga _x In _1−x P _y Sb _1−y (where x and y are 0 ≦ x ≦ 1, 0 ≦
It is most preferable that y ≦ 1, y = (10.4−6.53x) / (10.4 + 0.59x). GaI on InP
The critical film thickness of nPSb varies depending on the magnitude of lattice mismatch between the nPSb and the InP substrate.
J. Cryst. Growth reviewed by Akeslee
27, page 118, can be calculated by the mechanical equilibrium theory published in 1974. When the PL spectrum at room temperature of the ZnCdSe layer 9 on the InP substrate manufactured in this manner was measured, the emission intensity at the band edge near 590 nm showed that the ZnCdSe layer 9 on the InP substrate was manufactured using the conventional technique.
And the emission intensity from a deep level near 750 nm decreased to 1/20. Further, as a result of analyzing this sample using the SIMS method, it was found that the amount of In diffused into the ZnCdSe layer was reduced to about 1/100, and the crystal quality was significantly improved. Also,
In the above embodiment, the case where GaInPSb is used as the semiconductor surface layer containing Al, Ga and Sb has been described. However, the same effect as in the above embodiment can be obtained by using AlInPSb or the like instead of GaInPSb.

In the sixteenth embodiment, the semiconductor surface layer 17 of the fifteenth embodiment is changed from GaInPSb to Ga
Changed to PSb. According to the study of the inventor, the above Sb
In the case where the semiconductor surface layer containing In does not contain In, the effect of reducing the diffusion of In into the II-VI compound semiconductor thin film laminated thereon is dramatically increased, and Rioux et al.
Of Electron Spectroscopy and Relativized Phenomena (J. Electron
Spectroscopy and Related
Phenomena) 68, p. 719. It was also found that there was no generation of crystal defects as reported in 1994. Further, considering the crystal quality of the II-VI compound semiconductor layer laminated thereon, the thickness of the semiconductor surface layer made of GaPSb is desirably not more than the critical thickness determined by the amount of lattice mismatch with the InP substrate. , InP, the composition is most preferably GaP _0.35 Sb _0.65 . The critical film thickness of GaPSb on InP changes depending on the magnitude of the lattice mismatch with the InP substrate.
journals of Crystal Grouse (J. Crys) reviewed by Thews and Blakeslee.
t. (Growth) Vol. 27, page 118, can be calculated by the mechanical equilibrium theory published in 1974. When the PL spectrum of the ZnCdSe layer 9 on the InP substrate thus manufactured was measured at room temperature, the emission intensity at the band edge near 590 nm was about 10 times that of the ZnCdSe formed on the InP substrate using the conventional technique. 750n
Light emission from a deep level near m was not observed. In addition, as a result of analyzing this sample using the SIMS method, Zn
The amount of In diffused into the CdSe layer was below the detection limit, and it was found that the crystal quality was significantly improved. In the above embodiment, the case where GaPSb is used as the semiconductor surface layer containing Al or Ga and Sb has been described. However, instead of GaPSb, AlPSb, Al
AsSb, GaAsSb, AlGaPSb, AlGaAs
sSb or the like may be used, and diffusion of In is suppressed as in the above embodiment. AlPSb, AlAsSb, G
The thickness of the semiconductor surface layer made of aAsSb, AlGaPSb, AlGaAsSb, or the like is not more than the critical thickness determined by the amount of lattice mismatch with the InP substrate in consideration of the crystal quality of the II-VI compound semiconductor layer stacked thereon. And a composition AlP0.4Sb0.6 lattice-matched to InP,
AlAs _0.56 Sb _0.44 , GaAs _0.51 Sb _0.49 , Al _x
Ga _{1-x Py} Sb _1-y (where x and y are 0 ≦ x ≦ 1, 0 ≦ y ≦
1, y = (0.67x + 3.87) / (0.47x + 10.99)), AlxGa1-xAsySb1-y (where x and y are 0
≤x≤1, 0≤y≤1, y = (0.67x + 3.87) / (0.54x + 7.5
It is most preferable to satisfy 4)). AlPSb, AlAsSb, GaAsS on InP
The critical film thickness of b, AlGaPSb, AlGaAsSb, etc. changes depending on the magnitude of the lattice mismatch with the InP substrate. For example, Journal of Crystal Growth, Vol. It can be calculated by the mechanical equilibrium theory published on page 1974.

In a seventeenth embodiment, a case where the semiconductor surface layer is a super lattice will be described. As a specific embodiment of the present invention, II- on an InP substrate using a GaAs / GaSb superlattice layer as an In diffusion prevention layer.
The layer structure of the group VI compound semiconductor thin film is represented by GaI in FIG.
The semiconductor surface layer 17 made of nPSb is formed of GaAs / GaS
It is completed by replacing with a semiconductor surface layer composed of a b superlattice layer. First, the natural oxide film on the surface of the InP substrate 5 is removed under P molecular beam irradiation in a group III-V compound semiconductor growth chamber, and then an InP buffer layer 6 is grown, on which a GaAs / GaSb super lattice semiconductor A surface layer was deposited. The substrate was transferred to a II-VI compound semiconductor growth chamber via a vacuum transfer mechanism, and a Zn _0.48 Cd _0.52 Se layer 9 having a thickness of about 1 μm was grown thereon. According to the study of the present inventor, when the semiconductor surface layer 17 is formed of a superlattice, the diffusion amount of In into the II-VI group compound semiconductor thin film laminated thereon is smaller than that of a single film. It was found that the crystal quality of the II-VI group compound semiconductor thin film was further improved as well as further reduced. In addition, each layer thickness and the number of periods of the In diffusion preventing layer composed of a GaAs / GaSb superlattice are
In consideration of the crystal quality of the II-VI compound semiconductor layer laminated thereon, it is desirable that the thickness be equal to or less than the critical film thickness determined by the amount of lattice mismatch with the InP substrate. Most preferably, the lattice constants are equal. Specifically, in the case of a GaAs / GaSb superlattice, there is a -3.67% lattice mismatch between GaAs and InP, while +3.
Since there is a lattice mismatch of 87%, it is desirable that both of the film thicknesses in this case be 1 nm or less. When GaAs is 0.5 nm and GaSb is 0.5 nm, the average strain of the GaAs / GaSb superlattice is + 0.1%.
When the number of periods of the superlattice is up to about 150, the critical film thickness is not exceeded. The critical film thickness of each layer and the critical film thickness of the entire superlattice change depending on the magnitude of lattice mismatch between the InP substrate and, for example, Matthews and B.
The journal of which was considered by Lakeslee
Crystal Grouse (J. Cryst. Growth)
h) Volume 27, page 118, can be calculated by the mechanical equilibrium theory published in 1974. In thus prepared
When the PL spectrum of the ZnCdSe layer 9 on the P substrate at room temperature was measured, the emission intensity at the band edge near 590 nm showed that the ZnCdSe layer 9 was formed on the InP substrate using the conventional technique.
Light emission from a deep level near 750 nm, which is about 20 times as large as that of Se, was not observed. In addition, this sample
As a result of analysis using the IMS method, the amount of In diffused into the ZnCdSe layer 9 was below the detection limit, and it was clear that the crystal quality was improved. In the above embodiment, Ga is used as the semiconductor surface layer composed of the superlattice layer.
The case where an As / GaSb superlattice is used has been described, but a superlattice layer containing Al, Ga, In, or the like as a group III element and containing P, As, or Sb as a group V element, for example, G
Superlattice such as aP / GaSb, AlP / AlSb, Ga
Similar effects can be obtained by using a superlattice such as As / InSb or AlP / GaSb. Each layer of the superlattice does not need to be a binary compound, and may be a ternary or higher mixed crystal such as AlGaAs or AlGaSb.

In the eighteenth embodiment, III-
The semiconductor surface layer and an In diffusion preventing layer made of a II-VI compound containing Te are provided on the group V compound semiconductor, and an average lattice constant a _{0 of the} III-V compound semiconductor containing In is provided. The average lattice constant a ₁ of the semiconductor surface layer and the T
The average lattice constant a _{2 of the} In diffusion preventing layer made of a II-VI group compound containing e is a ₁ ≦ a ₀ ≦ a ₂ or a ₁ ≧ a ₀ ≧ a ₂
A description will be given of the case where FIG. 10 shows, as a specific embodiment of the present invention, InP when the semiconductor surface layer is made of GaAs and the In diffusion prevention layer is ZnTe.
1 shows a layer structure of a II-VI compound semiconductor thin film on a substrate. First, the natural oxide film on the surface of the InP substrate 5 is removed under P molecular beam irradiation in a group III-V compound semiconductor growth chamber, and then the InP buffer layer 6 is grown. Deposited. This substrate is transferred to a II-VI compound semiconductor growth chamber via a vacuum transfer mechanism,
First, an In diffusion preventing layer 19 made of ZnTe is deposited,
A Zn _0.48 Cd _0.52 Se layer 9 having a thickness of about 1 μm was grown _thereon . According to the study of the present inventors, III-V containing In
The semiconductor surface layer and the In diffusion prevention layer are provided on the group III compound semiconductor, and the average lattice constant a0 of the III-V compound semiconductor containing In and the average lattice constant a1 of the semiconductor surface layer and the Te are determined. group II-VI compound a lattice constant a ₂ average of in diffusion preventing layer made of, including _{the, a 1 ≦ a 0 ≦ a} 2, or, if a relation of _{a 1 ≧ a 0 ≧ a 2} , including the in III
The diffusion amount of In into the II-VI group compound semiconductor thin film is further reduced as compared with the case where only one of the semiconductor surface layer and the In diffusion preventing layer is provided on the -V group compound semiconductor. At the same time, it was found that the crystal quality of the II-VI group compound semiconductor thin film was further improved. Also, Ga
The semiconductor surface layer made of As and the In layer made of ZnTe
Considering the crystal quality of the II-VI group compound semiconductor layer laminated thereon, the thickness of each layer of the diffusion prevention layer and the sum of the thicknesses of the respective layers are not more than the critical thickness determined by the amount of lattice mismatch with respect to the InP substrate. The average value of the lattice constants of both the semiconductor surface layer and the In diffusion preventing layer is preferably
Most preferably, it is equal to the lattice constant of a group III-V compound semiconductor containing. Specifically, there is a -3.67% lattice mismatch between GaAs and InP, while ZnTe
Since there is a + 4.01% lattice mismatch between InP and InP, it is preferable that both of the film thicknesses in this case be 1 nm or less. Also, for example, GaAs is 9 °, ZnTe
Is 0.8 nm, the average value of the strain amount of the semiconductor surface layer and the In diffusion preventing layer is as very small as −0.06%, and the II-VI group compound semiconductor thin film laminated thereon is It is hardly affected by distortion, and crystallinity is improved. The critical thickness of each layer and the critical thickness when the thickness of both the semiconductor surface layer and the In diffusion preventing layer are combined vary depending on the magnitude of lattice mismatch between the InP substrate and, for example, Matt.
hews and Blakeslee, the Journal of Crystal Grouse (J. Cryst. G.
row) 27, p. 118, can be calculated by the mechanical equilibrium theory published in 1974. When the PL spectrum of the ZnCdSe layer 9 on the InP substrate thus manufactured was measured at room temperature, the emission intensity at the band edge near 590 nm was about 10 times that of the ZnCdSe formed on the InP substrate using the conventional technique. The emission intensity from a deep level near 750 nm was reduced by a factor of 20. In addition, as a result of analyzing this sample using the SIMS method, Zn
The amount of In diffused into the CdSe layer was reduced to about 1/200, and it became clear that the crystal quality was greatly improved. Further, in the above embodiment, the case where GaAs is used as the semiconductor surface layer and ZnTe is used as the In diffusion prevention layer, but all the semiconductor surface layers of the present invention are used as the semiconductor surface layer and the In diffusion prevention layer, The same effect as in the above embodiment can be obtained by the combination of the In diffusion preventing layer composed of all the Te-containing II-VI compounds of the present invention.

In a nineteenth embodiment, the semiconductor surface layer is made of an II-VI compound containing Te.
A II-VI compound semiconductor thin film in which an n-diffusion preventing layer is formed on a vicinal substrate (a vicinal surface) will be described. As a specific embodiment of the present invention, <11
An In diffusion prevention layer made of ZnSeTe is provided on a (001) InP tilted substrate inclined at 2 degrees in the 0> direction.
The case where the II-VI compound semiconductor thin film layer is formed will be described. The layer structure of the main part of this embodiment is such that the InP substrate 5 in FIG. 3 is tilted twice in the <110> direction (001).
It is completed by replacing the substrate with a slightly inclined InP substrate.
In the III-V compound semiconductor growth chamber, the natural oxide film on the surface of the (001) vicinal substrate tilted twice in the <110> direction under P molecular beam irradiation was removed, and then the InP buffer layer 6 was grown. . This substrate is transferred via a vacuum transfer mechanism II
-Transfer to a group VI compound semiconductor growth chamber, deposit a ZnCdSe buffer layer 7 having a thickness of about 10 nm,
An In diffusion preventing layer 8 made of Te is laminated, and Zn _0.48 Cd _0.52 Se lattice-matched with InP having a thickness of about 1 μm is formed thereon.
A layer (II-VI compound semiconductor thin film layer) 9 was grown. The vicinal substrate has an effect of suppressing the desorption of the group V element from the substrate surface. According to the study of the present inventors, the effect of the semiconductor surface layer and the In diffusion prevention layer is more significant on the vicinal substrate. It turned out to be stronger. Therefore, (001) In
It was formed on a P slightly inclined substrate. In made of ZnSeTe
The diffusion rate of In in the diffusion prevention layer 8 becomes further slower than that on the (001) InP substrate having almost no inclination, and the diffusion rate of In into the ZnCdSe layer 9 stacked thereon is increased.
The diffusion amount of n was significantly reduced. When a mixed crystal containing Te is formed on the InP buffer layer 6, the combination of In and Te easily forms a three-dimensional nucleus. Therefore, the ZnCdSe buffer layer 7 is effective for obtaining a film with good flatness. is there.
The layer thickness of the ZnCdSe buffer layer 7 depends on the crystal quality of the II-VI group compound semiconductor layer laminated thereon.
It is desirable that the thickness be equal to or less than the critical film thickness determined by the amount of lattice mismatch with the nP substrate, and it is most desirable that the composition be Zn _0.48 Cd _0.52 Se that lattice-matches with the InP substrate. Further, the thickness of the In diffusion preventing layer 8 made of ZnSeTe is also
Given the crystal quality of the Group II-VI compound semiconductor layer stacked thereon, it is desirable to below the critical thickness determined by the lattice mismatch amount for InP substrate, also, ZnSe composition matching the InP substrate and lattice _0.54 Te Most preferably, it is _0.46 . Note that the critical film thickness of ZnCdSe and ZnSeTe changes depending on the magnitude of lattice mismatch with the InP substrate. For example, Matthews and Blakesle
e, Journal of Crystal Growth 27, 11
Page 8 It can be calculated by the mechanical equilibrium theory published in 1974. . Zn on the InP substrate thus manufactured
When the PL spectrum of the CdSe layer 9 at room temperature was measured, the emission intensity at the band edge near 590 nm was increased about three times as compared with ZnCdSe formed on the InP substrate using the conventional technique, and the deep level near 750 nm was obtained. Light emission from 1
/ 10 decrease. In addition, as a result of analyzing this sample using the SIMS method, it was found that In diffused in the ZnCdSe layer 9.
Was reduced to about 1/30 of the conventional amount, and it became clear that the crystal quality was improved. In this embodiment, <1
The case where the (001) InP slightly tilted substrate tilted two degrees in the 10> direction has been described. However, other tilt angles and tilt directions may be used.
The same effect can be obtained by using As, GaAs, GaP or the like. In this embodiment, the case where InP is used as the buffer layer has been described.
The same effect can be obtained when aInAs or GaInAsP is used as the buffer layer. Although the case where ZnSeTe is used as the In diffusion preventing layer has been described, the same effect is obtained when all the In diffusion preventing layers of the present invention are used, and all the semiconductor surface layers of the present invention are used. Also in this case, there is an effect that the diffusion amount of In into the II-VI group compound semiconductor thin film is further reduced.

In the twentieth embodiment, the semiconductor surface layer or the In diffusion preventing layer made of a II-VI compound containing Te is formed on the (111) B plane of the III-V compound semiconductor layer containing In. A semiconductor device characterized by the following will be described. As a specific embodiment of the present invention, ZnSeT is formed on an InP substrate (111) B surface.
A case will be described in which an In diffusion preventing layer made of e is provided, and a II-VI compound semiconductor thin film layer is formed thereon. The layer structure of the main part of this embodiment is completed by replacing the InP substrate 5 in FIG. 2 with an InP (111) B plane substrate. P in the III-V compound semiconductor growth chamber
Under the molecular beam irradiation, the natural oxide film on the surface of the InP substrate (111) B was removed, and then the InP buffer layer 6 was grown. The substrate is transferred to a II-VI compound semiconductor growth chamber via a vacuum transfer mechanism, and a ZnCdSe buffer layer 7 having a thickness of about 10 nm is deposited.
An n-diffusion prevention layer 8 is laminated, and an In 1 having a thickness of about 1 μm
A Zn _0.48 Cd _0.52 Se layer (II-VI compound semiconductor) 9 lattice-matched with P was grown. On the (111) B plane, the topmost group V atom is bonded to four group III atoms, so that V
It is difficult for elimination of group atoms to occur, and according to the study of the present inventors, on the (111) B plane, the semiconductor surface layer or In
It became clear that the effect of the diffusion preventing layer became stronger. Therefore, ZnS formed on the InP (111) B surface
In the In diffusion preventing layer 8 made of eTe, the diffusion rate of In becomes slower than that on the InP (001) plane, and the In diffusion into the ZnCdSe layer 9 stacked thereover is slower.
Was significantly reduced. When a mixed crystal containing Te is formed on the InP buffer layer 6, the combination of In and Te easily forms a three-dimensional nucleus. Therefore, the ZnCdSe buffer layer 7 is effective for obtaining a film with good flatness. is there. Considering the crystal quality of the II-VI group compound semiconductor layer laminated thereon, the thickness of the ZnCdSe buffer layer 7 is In.
It is desirable that the thickness be equal to or less than the critical film thickness determined by the amount of lattice mismatch with the P substrate, and it is most desirable that the composition be Zn _0.48 Cd _0.52 Se that lattice-matches with the InP substrate. Further, the thickness of the In diffusion preventing layer 8 made of ZnSeTe is also
Given the crystal quality of the Group II-VI compound semiconductor layer stacked thereon, the critical thickness it is desirable to below and composition ZnSe _0.54 Te _0.46 to InP substrate and lattice-matched determined by lattice mismatch amount for InP substrate Is most desirable. Note that the critical film thickness of ZnCdSe and ZnSeTe varies depending on the magnitude of lattice mismatch between the InP substrate and, for example, Matthews and Blakeslee.
Journal of Crystal Growth 27, 118
Page It can be calculated by the mechanical equilibrium theory published in 1974. . ZnC on the InP substrate thus manufactured
When the PL spectrum of the dSe layer 9 at room temperature was measured, the emission intensity at the band edge near 590 nm was about 5 times smaller than that of ZnCdSe formed on the InP substrate using the conventional technique.
Light emission from a deep level near 750 nm is 1 /
Decreased by 20. Further, as a result of analyzing this sample by using the SIMS method, it was found that the amount of In diffused into the ZnCdSe layer 9 was reduced to about 1/100 of the conventional one, and the crystal quality was improved. . In this embodiment, the case where the InP (111) B plane is used as the substrate has been described. However, other than InP, such as InAs, GaAs,
The same effect can be obtained by using aP or the like as the substrate. In this embodiment, the case where InP is used as the buffer layer has been described.
The same effect is obtained when As or GaInAsP is used as the buffer layer. Alternatively, Zn as an In diffusion preventing layer
Although the case where SeTe is used has been described, a similar effect can be obtained when all the In diffusion preventing layers of the present invention are used.
Further, when all the semiconductor surface layers of the present invention were used, II-
This has the effect of further reducing the amount of In diffused into the group VI compound semiconductor thin film.

In the twenty-first embodiment, I
A semiconductor device in which at least one semiconductor layer made of a group III nitride is provided on a group III-V compound semiconductor containing n will be described. FIG. 11 shows an example of a specific embodiment of the present invention.
The case where an N layer is provided as one layer and a II-VI group compound semiconductor thin film is formed thereon will be described. First, the InP substrate 5 is irradiated with a P molecular beam in a III-V compound semiconductor growth chamber.
The surface natural oxide film is removed, and then the InP buffer layer 6 is removed.
Was grown, and the surface was irradiated with atomic nitrogen using an RF plasma gun to form a semiconductor layer of InN for about one atomic layer. The substrate is transferred to a II-VI compound semiconductor growth chamber via a vacuum transfer mechanism, and a Z-layer having a thickness of about 1 μm is placed thereon.
n _0.48 Cd _0.52 Se layer (II-VI compound semiconductor thin film layer)
9 grew. According to the study of the present inventor, the bonding force between N and a group III element is much larger than the bonding force between another group V element such as As, P or Sb and a group III element. Therefore, when a semiconductor layer made of a group III nitride is formed on the surface of a group III-V compound semiconductor containing In, desorption of a group V element hardly occurs, and a conventional semiconductor layer made of a group III nitride is formed. To be stacked on it compared to the case without
It was found that the amount of In diffused into the group-VI compound semiconductor thin film was significantly reduced. The thickness of the semiconductor layer made of InN has a very large lattice mismatch of about 15% with that of the InP substrate. Therefore, considering the crystal quality of the II-VI compound semiconductor layer laminated thereon, the layer is as thin as possible. It is desirable that the thickness be as thick as possible, and even with about one atomic layer, the effect of suppressing the diffusion of In is sufficient. InP produced in this way
When the PL spectrum of the ZnCdSe layer 9 on the substrate was measured at room temperature, the emission intensity at the band edge near 590 nm showed that the ZnCdSe layer 9 was formed on the InP substrate using the conventional technique.
The light emission from a deep level near 750 nm was increased by a factor of about 2 as compared with e, and decreased by 1/5. In addition, this sample was
As a result of analysis using the S method, it was found that the amount of In diffused into the ZnCdSe layer 9 was reduced to about 1/10 of that of the conventional technique, and the crystal quality was improved. In this embodiment, the case where InP is used as the substrate has been described. However, other than InP, for example, InAs, GaAs, Ga
Use of P or the like as a substrate has the same effect. Also,
In this embodiment, the case where InP is used as the buffer layer has been described. However, for example, GaInAs other than InP may be used.
The same effect is obtained when GaInAsP is used as the buffer layer. In this embodiment, an RF plasma gun is used to supply atomic nitrogen onto InP, but other ECR plasma guns or the like may be used.
The effect of preventing the diffusion of In into the II-VI compound semiconductor thin film formed on the III-V compound semiconductor formed on the III-V compound semiconductor containing I do not.

In the present embodiment, the semiconductor surface layer or In made of a II-VI compound containing Te is used.
A semiconductor device in which a diffusion prevention layer is provided on a semiconductor layer made of a group III nitride will be described. FIG. 12 shows a specific embodiment of the present invention, In
On an InN layer (semiconductor layer made of group III nitride) formed on a P (III-V compound semiconductor layer containing In) substrate, an In diffusion prevention layer made of ZnSeTe is provided, and
A case where a II-VI compound semiconductor thin film is formed will be described. In the III-V compound semiconductor growth chamber, the natural oxide film on the surface of the InP substrate is removed under P molecular beam irradiation, and then the InP buffer layer 6 is grown, and the surface is irradiated with atomic nitrogen using an RF plasma gun. Then, a semiconductor layer made of InN was formed for about one atomic layer. This substrate is transferred to a II-VI compound semiconductor growth chamber via a vacuum transfer mechanism, a ZnCdSe buffer layer 7 having a thickness of about 10 nm is deposited, and an In diffusion prevention layer 8 made of ZnSeTe is laminated.
On top of this, Zn _0.48 lattice-matched with about 1 μm thick InP
A Cd _0.52 Se layer 9 was grown. According to the study of the present inventors, it has been clarified that the effects of the semiconductor surface layer and the In diffusion preventing layer are stronger on the semiconductor layer made of the group III nitride. In the In diffusion preventing layer 8 made of ZnSeTe formed on the semiconductor layer made of the group III nitride, the diffusion rate of In is further reduced as compared with the case where the semiconductor layer made of the group III nitride is not provided. The diffusion amount of In into the ZnCdSe layer 9 laminated thereon could be significantly reduced. When a mixed crystal containing Te is formed on the InP buffer layer 6, In and Te are easily combined to form a three-dimensional nucleus. Therefore, in order to obtain a film with good flatness, ZnCdSe is required.
The buffer layer 7 is effective. Considering the crystal quality of the II-VI group compound semiconductor layer laminated thereon, the thickness of the ZnCdSe buffer layer 7 is desirably equal to or less than the critical thickness determined by the amount of lattice mismatch with the InP substrate. Most preferably, the composition is Zn _0.48 Cd _0.52 Se which lattice-matches with the substrate. Also, considering the crystal quality of the II-VI group compound semiconductor layer laminated thereon, the thickness of the In diffusion preventing layer 8 made of ZnSeTe should be equal to or less than the critical thickness determined by the amount of lattice mismatch with the InP substrate. And a composition ZnSe that lattice-matches with the InP substrate.
Most preferably, it is _0.54 Te _0.46 . Note that ZnC
The critical film thickness of dSe and ZnSeTe changes depending on the magnitude of the lattice mismatch with the InP substrate.
hews and Blakeslee, the Journal of Crystal Grouse (J. Cryst.
(Growth) Vol. 27, page 118, can be calculated by the mechanical equilibrium theory published in 1974. . The P at room temperature of the ZnCdSe layer 9 on the InP substrate thus manufactured
When the L spectrum was measured, the emission intensity at the band edge near 590 nm was increased about 4 times as compared with ZnCdSe formed on the InP substrate using the conventional technique, and the emission from the deep level near 750 nm was 1/10. Diminished. In addition, as a result of analyzing this sample using the SIMS method, ZnCdS
The amount of In diffused into the e-layer 9 was reduced to about 1/40 of the conventional level, and it was found that the crystal quality was improved. In this embodiment, the case where InP is used as the substrate has been described.
The same effect can be obtained by using s, GaAs, GaP or the like as the substrate. In this embodiment, the buffer layer is I
Although the case where nP is used has been described, the same effect can be obtained when GaInAs or GaInAsP other than InP is used as the buffer layer. In this embodiment, an RF plasma gun is used to supply atomic nitrogen to InP. However, other ECR plasma guns may be used, and an RF plasma gun may be formed on a III-V compound semiconductor containing In. The effect of preventing diffusion of In into the II-VI compound semiconductor thin film formed on the group III nitride,
It does not depend on the method of supplying atomic nitrogen. Alternatively, the case where ZnSeTe is used as the In diffusion preventing layer has been described.
The use of the diffusion prevention layer has an effect, and the use of the semiconductor surface layer also has the effect of further reducing the amount of In diffused into the II-VI group compound semiconductor thin film.

In the twenty-third embodiment, V
Containing In using molecular beam containing atomic group element and atomic hydrogen II
After cleaning the surface of the group IV-compound semiconductor substrate, the semiconductor surface layer or an In-diffusion preventing layer made of a group II-VI compound containing Te is provided, and a group II-VI compound semiconductor thin film is formed thereon. A method for manufacturing a semiconductor device, which is characterized by being formed, will be described. If the surface of a III-V compound semiconductor substrate containing In is cleaned while supplying only a conventional molecular beam containing a Group V element, very small In droplets and surface roughness are likely to be generated. Even when the group V compound semiconductor buffer layer is laminated, the In droplet and the surface roughness are not easily erased from the surface, which is one of the causes of diffusion of In into the II-VI compound semiconductor thin film laminated thereon. The inventor has conducted various experiments, and as a result, has completed the method for producing a II-VI compound semiconductor thin film of the present invention. That is, in the method for producing a group II-VI compound semiconductor thin film of the present invention, V
Containing In using molecular beam containing atomic group element and atomic hydrogen II
After cleaning the surface of the group IV-compound semiconductor substrate, the semiconductor surface layer or an In diffusion preventing layer made of a group II-VI compound containing Te is provided, and a group II-VI compound semiconductor thin film is formed thereon. I do. By using this method, the cleaned In
Is almost completely in the surface of the III-V compound semiconductor substrate containing
Since there is no generation of droplets and extremely good flatness, the semiconductor surface layer provided thereon or the II-VI containing Te
The effect of suppressing the diffusion of In by the In diffusion preventing layer made of a Group compound is increased, and a high-quality Group II-VI compound semiconductor thin film can be obtained. In the present embodiment, the method for manufacturing a II-VI compound semiconductor thin film has been described. However, in the case of a method for manufacturing a II-VI compound semiconductor laser, which is an example of the method for manufacturing a semiconductor device of the present invention, a group V element is used. After cleaning the surface of the III-V compound semiconductor substrate containing In using the molecular beam containing hydrogen and atomic hydrogen, the semiconductor surface layer or II containing Te is cleaned.
Providing an In diffusion prevention layer comprising a -VI compound, an n-type cladding layer comprising a II-VI compound semiconductor, an active layer comprising a II-VI compound semiconductor, a p-type cladding layer comprising a II-VI compound semiconductor, A p-type contact layer 27 made of a II-VI compound semiconductor is sequentially formed, and thereafter, an insulating film 28, a p-electrode 29, an n-electrode 21, and the like are formed. According to this method, since the surface of the cleaned III-V compound semiconductor substrate containing In hardly generates In droplets and has extremely good flatness, the semiconductor surface layer or the Te layer provided thereon may be used. In-diffusion preventing layer made of a II-VI compound containing C increases the effect of suppressing the diffusion of In, improves the electrical characteristics as compared with the conventional II-VI compound semiconductor laser, operates at a lower voltage, and has an active property. A II-VI compound semiconductor laser that has a low threshold value and a high output with improved luminous efficiency of the layer, suppresses generation and growth of defects, and operates stably for a long time can be manufactured.

Next, as a twenty-fourth embodiment, a specific embodiment of the method for manufacturing a semiconductor device of the present invention will be described. After cleaning the surface of the InP substrate using P and atomic hydrogen, an In diffusion prevention layer made of ZnSeTe is provided on the InP substrate, and a II-VI group compound semiconductor thin film or a semiconductor device is formed thereon. Will be described. Removing a natural oxide film on the surface of the InP substrate while irradiating atomic hydrogen generated by using a P molecular beam and an ECR plasma gun in a group III-V compound semiconductor growth chamber;
Subsequently, the InP buffer layer 6 is grown. The substrate is transferred to a group II-VI compound semiconductor growth chamber via a vacuum transfer mechanism, a ZnCdSe buffer layer 7 having a thickness of about 10 nm is deposited, and an In diffusion preventing layer 8 made of ZnSeTe is laminated thereon. A Zn _0.48 Cd _0.52 Se layer 9 lattice-matched with InP having a thickness of about 1 μm, or an n-type MgZnCd
Se clad layer 32, ZnCdSe active layer 33, p-type M
A gZnCdSe cladding layer 34 and a p-type ZnSeTe contact layer were grown. In the case of the method for manufacturing a semiconductor device according to the present invention, an insulating film 28, a p-electrode 29, an n-electrode 21 and the like are formed thereafter, and a laser cavity surface is formed by cleavage. According to the method of manufacturing a group II-VI compound semiconductor thin film and the method of forming a semiconductor device of the present invention, In
When the surface of the P substrate is cleaned, the surface of the cleaned InP substrate is less likely to generate minute droplets of In and has extremely excellent flatness as compared with the conventional case, and an InP buffer layer is formed thereon. When stacked, the In droplet almost disappears, and the I-diffusion prevention layer 8 made of ZnSeTe formed on this
In n, the diffusion rate of In becomes slower than when the surface of the InP substrate is cleaned by the conventional method, and the ZnCdSe layer 9 or n-type Mg
ZnCdSe cladding layer 32, ZnCdSe active layer 3
3, p-type MgZnCdSe cladding layer 34, p-type ZnS
The diffusion amount of In into the eTe contact layer 35 was significantly reduced. When a mixed crystal containing Te is formed on the InP buffer layer 6, In and Te are easily bonded to form a three-dimensional nucleus.
The Se buffer layer 7 is effective. Considering the crystal quality of the II-VI group compound semiconductor layer laminated thereon, the thickness of the ZnCdSe buffer layer 7 is desirably not more than the critical thickness determined by the amount of lattice mismatch with the InP substrate.
The composition Zn _0.48 Cd _0.52 S lattice-matched to the InP substrate
e is most desirable. In addition, the thickness of the In diffusion preventing layer 8 made of ZnSeTe also depends on the II-
Considering the crystal quality of the group VI compound semiconductor layer, it is desirable that the thickness be equal to or less than the critical film thickness determined by the amount of lattice mismatch with the InP substrate.
e _0.54 Te _0.46 is most desirable. Note that Zn
The critical film thickness of CdSe and ZnSeTe changes depending on the magnitude of the lattice mismatch with the InP substrate.
the Journals of Crystal Grouse, reviewed by Thews and Blakeslee (J. Cryst.
(Growth) Vol. 27, page 118, can be calculated by the mechanical equilibrium theory published in 1974. PL of the ZnCdSe layer 9 on the InP substrate thus manufactured at room temperature
When the spectrum was measured, the emission intensity at the band edge near 590 nm increased about 5 times as compared with ZnCdSe formed on the InP substrate using the conventional technique, and the emission from the deep level near 750 nm decreased 1/20. did. In addition, as a result of analyzing this sample using the SIMS method, ZnCdSe
The amount of In diffused into the layer 9 was reduced to about 1/100 of the conventional level, and it became clear that the crystal quality was improved. In addition, the II-VI compound semiconductor laser fabricated in this manner has improved electric characteristics, operates at a lower voltage, and has improved luminous efficiency of the active layer, as compared with the conventional II-VI compound semiconductor laser. It has a low threshold and a high output, and suppresses the generation and proliferation of defects, and operates stably for a long time. In addition,
In this embodiment, the case where InP is used as the substrate has been described. However, other than InP, such as InAs and GaIn
The same effect can be obtained by using As, InSb, or the like as a substrate and cleaning the substrate surface while supplying a molecular beam containing a group V atom such as As or Sb together with atomic hydrogen instead of P. In this embodiment, the buffer layer is I
Although the case where nP is used has been described, the same effect can be obtained when GaInAs or GaInAsP other than InP is used as the buffer layer. The molecular beam containing a group V element can be obtained by sublimating a simple substance or a compound of P, As, or Sb, cracking it at a higher temperature, or cracking a hydrogenated group V gas at a high temperature. The effect of suppressing the generation of In droplets and the effect of improving the flatness of the surface do not depend on the method of supplying a molecular beam containing a group V element. In the present embodiment, I
Although an ECR plasma gun was used to supply atomic hydrogen on nP, other EF plasma guns may be used to improve the effect of suppressing the generation of In droplets and the surface flatness. The effect does not depend on the method of supplying atomic hydrogen. Alternatively, the case where ZnSeTe is used as the In diffusion prevention layer has been described, but other materials containing Te may be used.
The use of an In diffusion prevention layer made of a -VI compound is also effective, and the use of the semiconductor surface layer and the use of the II
The use of a semiconductor layer made of a group I nitride also has the effect of further reducing the amount of In diffused into the group II-VI compound semiconductor thin film and into each group II-VI compound semiconductor layer forming the semiconductor device.

As a twenty-fifth embodiment,
The semiconductor laser will be described. According to the second embodiment, the portion of the II-VI compound semiconductor layer 4 in the eighth embodiment or the twelfth embodiment is replaced with an n-type cladding layer 24 made of a II-VI compound semiconductor, II-VI. An active layer 25 made of a group III compound semiconductor, a p-type cladding layer 26 made of a group II-VI compound semiconductor, and a p-type contact layer 27 made of a group II-VI compound semiconductor are replaced with an insulating film 28, a p-electrode 29, and an n-electrode 21. The structure of a II-VI group compound semiconductor laser, which is an example of the semiconductor device of the present invention, can be obtained by forming the above-described structure. As in the case of the eighth or twelfth embodiment, A
On the semiconductor surface layer 10 containing l or Ga or the semiconductor surface layer 12 containing Sb, an n-type cladding layer 24 made of a II-VI compound semiconductor, an active layer 25 made of a II-VI compound semiconductor, a II-VI group Since the diffusion of In into the p-type cladding layer 26 made of a compound semiconductor and the p-type contact layer 27 made of a II-VI compound semiconductor is largely suppressed, the II-VI compound semiconductor laser of the present invention is Compared with II-VI compound semiconductor lasers, the electric characteristics are improved, the device operates at a low voltage, the luminous efficiency of the active layer is improved, the threshold value is high and the output is high, and the occurrence and growth of defects are suppressed. It can operate stably for a long time. In this embodiment, as an example, a single II-VI compound semiconductor layer is used for the active layer.
-The group VI compound semiconductor laser has been described, but the present invention is not limited to this.
The same effect is obtained with a -VI compound semiconductor laser. Further, a light guide layer may be provided between the active layer and the clad layer. Further, in the present embodiment, the II-VI compound semiconductor laser has been described as an example, but the improvement of the electrical characteristics can be achieved even when applied to other optical devices and electronic devices such as light emitting diodes, optical modulators, light receiving elements, and transistors. And
There are effects such as higher efficiency and longer life. Also II
The present invention can be applied to a case where a II-VI group compound semiconductor is used as a buried layer of an optical device or an electronic device composed of an IV group compound semiconductor, and has effects such as improvement in voltage-current characteristics.

As a twenty-sixth embodiment,
The semiconductor laser will be described. According to the fourth embodiment, the sixth, seventh, ninth, tenth, eleventh, and first
5, 17th, 18th, 19th, 20th, 21st, 22nd
In this embodiment, the portion of the Zn _0.48 Cd _0.52 Se layer 9 is replaced with an n-type MgZnCdSe cladding layer 32, a ZnCdSe active layer 33, a p-type MgZnCdSe cladding layer 34, and a p-type ZnSeTe contact layer 35, and the insulating film 2 is formed.
8, when the p-electrode 29, the n-electrode 21, and the like are formed, a structure of a II-VI compound semiconductor laser, which is an example of the semiconductor device of the present invention, can be obtained. The sixth, seventh, ninth, tenth, first
1, 15th, 17th, 18th, 19th, 20th, 2nd
1. In the 22nd embodiment, similarly to the case where the diffusion of In into the Zn _0.48 Cd _0.52 Se layer 9 was suppressed, the II-
In the group VI compound semiconductor laser structure, n-type MgZnCdS
e clad layer 32, ZnCdSe active layer 33, p-type Mg
Since the diffusion of In into the ZnCdSe cladding layer 34 and the p-type ZnSeTe contact layer 35 is greatly suppressed, the II-VI group compound semiconductor laser of the present invention is a conventional II-VI compound semiconductor laser.
Compared to group-compound semiconductor lasers, they have improved electrical characteristics and operate at lower voltages, improved luminous efficiency of the active layer, have lower threshold and higher output, and have a longer operation stability with less generation and proliferation of defects. can do. In the present embodiment, a II-VI compound semiconductor laser using a single II-VI compound semiconductor layer as an active layer has been described as an example. However, the present invention is not limited to this. The same effect can be obtained with II-VI group compound semiconductor lasers using the same.
Further, a light guide layer may be provided between the active layer and the clad layer. Further, in the present embodiment, the II-VI compound semiconductor laser has been described as an example, but the improvement of the electrical characteristics can be achieved even when applied to other optical devices and electronic devices such as light emitting diodes, optical modulators, light receiving elements, and transistors. And
There are effects such as higher efficiency and longer life. Also II
The present invention can be applied to a case where a II-VI group compound semiconductor is used as a buried layer of an optical device or an electronic device composed of an IV group compound semiconductor, and has effects such as improvement in voltage-current characteristics.

As a twenty-seventh embodiment,
The semiconductor laser will be described. N-type M of the fourth embodiment
gZnCdSe cladding layer 32, ZnCdSe active layer 3
3, p-type MgZnCdSe cladding layer 34, p-type ZnS
The eTe contact layers 35 are each made of n-type MgZnSe.
Te clad layer, ZnSeTe active layer, p-type MgZnS
An eTe clad layer and a p-type ZnSeTe contact layer were used, and these were applied to the ZnSe _0.1 Te _0.9 layer 16 of the thirteenth or fourteenth embodiment to form an insulating film 28, a p-electrode 29, an n-electrode 21, and the like. When formed, a structure of a II-VI compound semiconductor laser, which is an example of the semiconductor device of the present invention, is obtained. Similarly to the case where the diffusion of In into the ZnSe _0.1 Te _0.9 layer 16 was suppressed in the thirteenth or fourteenth embodiment, the n-type MgZnSeTe cladding layer, the ZnSeTe
Active layer, p-type MgZnSeTe cladding layer, p-type ZnS
Since the diffusion of In into the eTe contact layer is largely suppressed, the II-VI compound semiconductor laser of the present invention has improved electrical characteristics and a lower voltage than the conventional II-VI compound semiconductor laser. It operates, has a low threshold value and high output with improved luminous efficiency of the active layer, and is capable of stable operation for a long time by suppressing generation and proliferation of defects. In the present embodiment, a II-VI group compound semiconductor laser using a single ZnSeTe layer as an active layer has been described as an example. However, the present invention is not limited to this, and ZnSeTe / MgZnSeTe is used as an active layer.
An II-VI compound semiconductor laser using a quantum well, a strained quantum well, or the like has the same effect. Further, a light guide layer may be provided between the active layer and the clad layer. In the present embodiment, the II-VI compound semiconductor laser has been described as an example. However, even when applied to other optical devices and electronic devices such as light-emitting diodes, optical modulators, light-receiving elements, and transistors, the electrical characteristics can be improved. Also, there are effects such as higher efficiency and longer life. In addition, as a buried layer of an optical device or an electronic device comprising a III-V compound semiconductor,
The present invention can be applied to the case where a group III compound semiconductor is used, and has effects such as improvement in voltage-current characteristics.

In the above embodiment, as a substrate, an InP and InAs substrate, and a III-V substrate containing In
Buffer layer and InAs as group III compound semiconductors
The case where the buffer layer is used has been described.
II-VI group compound semiconductor thin films and semiconductor devices II
The effect of suppressing the diffusion of In into the group-VI compound semiconductor layer is due to the other substrates, for example, GaAs, GaP, In.
Other III-V compound semiconductor substrates such as GaAs;
And InAs as III-V group compound semiconductors containing
Other than GaInAs, GaInAsP, AlIn
As, AlInAsP, AlGaInAs, AlGaI
Similar effects can be obtained when a III-V group compound semiconductor layer containing In such as nP is used. In the above embodiment, T
The formation of the In diffusion preventing layer made of a II-VI compound containing e was performed in a II-VI compound semiconductor growth chamber, but provided with an apparatus capable of supplying a raw material of a group II element and a group VI element III.
After forming the In diffusion preventing layer in the -V compound semiconductor growth chamber, the layer may be transferred to the II-VI compound semiconductor growth chamber. In the above embodiment, the ZnC is used as a II-VI compound semiconductor thin film on the III-V compound semiconductor containing In.
When a single layer of dSe or ZnSeTe is formed, or as a II-VI compound semiconductor layer forming a semiconductor device, ZnCdS
e, ZnSeTe, MgZnCdSe, MgZnSeT
e has been described in the case of forming a multilayer structure made of e, but other II-VI compound semiconductors such as Be, Mg, Z
Similar effects can be obtained when a group II-VI compound semiconductor comprising a group II element such as n and Cd and a group VI element such as S, Se and Te is formed. Further, in the above embodiment, the case where the II-VI compound semiconductor thin film or the semiconductor device is formed by the MBE method has been described.
Metalorganic Vap
or Phase Epitaxy (MOVPE) method. The effect of the present invention is that
This is effective regardless of the conduction type of the group III-V compound semiconductor containing. Furthermore, in the above embodiments of the present invention, a case where a II-VI compound semiconductor thin film is formed on a flat substrate has been described, but a part of the substrate is covered with an insulating film,
The same effect is obtained when a substrate on which an arbitrary pattern is formed by etching or the like is used.

According to the first aspect, the present invention can further take the following aspects. (1) The case where the In diffusion preventing layer made of a II-VI compound containing Te contains at least one of Be, Zn, and Mg. (2) The case where the In diffusion preventing layer made of a II-VI group compound containing Te is a superlattice.

According to the second aspect of the present invention, the present invention can further take the following aspects. (3) III containing Al or Ga
-The case where the semiconductor surface layer made of the group V compound does not contain In and P at the same time. (4) III-V containing Al or Ga
The case where the semiconductor surface layer made of a group III compound does not contain In and Ga at the same time.

According to the fourth aspect, the present invention can further take the following aspects. (5) At least one semiconductor surface layer made of a III-V compound containing Sb is provided, and the lattice constant of the semiconductor surface layer made of a III-V compound containing Sb has a lattice constant of III-V containing In. When they match with the compound semiconductor in the interface direction. (6) Claim 2 or (1)
Or the case where the semiconductor surface layer according to (2) contains Sb.
(7) The case where the semiconductor surface layer according to claim 4 or (5) or (6) is a superlattice.

The present invention can further take the following aspects.
(8) In according to claim 1 or (1) or (2),
The diffusion preventing layer is formed on the semiconductor surface layer according to any one of claims 2 to 4, or (3) to (7), and the average lattice constant of the In diffusion preventing layer. a ₂ and said group III-V group III-V compound lattice constant a ₀ of the semiconductor comprising the lattice constants a ₁ and in average the semiconductor surface layer, a
₁ ≦ a ₀ ≦ a ₂ or a ₁ ≧ a ₀ ≧ a ₂ .

According to the fifth aspect, the present invention can further take the following aspects. (9) The case where the semiconductor layer made of a group III nitride semiconductor is included in any one of the semiconductor devices according to any one of claims 1 to 4, and any one of the semiconductor devices according to any one of (1) to (8).

According to the sixth aspect of the present invention, the present invention can further take the following aspects. (10) In the semiconductor device according to any one of (1) to (9), the surface of the III-V compound semiconductor layer containing In on the side of the II-VI compound semiconductor thin film layer is slightly inclined.

According to the seventh aspect, the present invention can further take the following aspects. (11) In the semiconductor device according to any one of (1) to (9), the surface of the III-V compound semiconductor layer containing In on the side of the II-VI compound semiconductor thin film layer is (11).
1) In the case of B side.

[0041]

As described above in detail, according to the semiconductor device and the method of manufacturing the same of the present invention, the following effects can be obtained. On the III-V compound semiconductor layer containing In, an In diffusion preventing layer made of a II-VI compound containing Te, or a semiconductor surface layer made of a III-V compound semiconductor containing Al or Ga, or In. Not including II
A semiconductor surface layer composed of an IV group compound semiconductor, or
A semiconductor comprising a substrate having a II-VI group compound semiconductor thin film layer formed on any one of a semiconductor surface layer made of a group III-V compound semiconductor containing Sb and a semiconductor layer made of a group III nitride semiconductor. In the device, the diffusion of In into the II-VI compound semiconductor thin film layer is reduced, so that the II-VI compound semiconductor thin film has high quality, low element resistance, excellent electrical characteristics, and high efficiency and high performance. can get. The effect of suppressing the diffusion of In described above was further enhanced by using the In-containing III-V compound semiconductor layer having a slightly inclined surface or its (111) B plane. Further, when P and atomic hydrogen are simultaneously supplied to the surface of the InP substrate to clean the surface, the generation of minute droplets of In is suppressed, and the surface flatness is also improved.
The effect of suppressing the diffusion of In described above was further enhanced.

[Brief description of the drawings]

FIG. 1 is a diagram showing a layer structure of a main part of a first embodiment of a semiconductor device of the present invention.

FIG. 2 is a diagram showing a layer structure of a main part of a second embodiment of the semiconductor device of the present invention.

FIG. 3 is a diagram showing a layer structure of a main part of a third embodiment of the semiconductor device of the present invention.

FIG. 4 is a diagram showing a layer structure of a main part of a fourth embodiment of the semiconductor device of the present invention.

FIG. 5 is a diagram showing a layer structure of a main part of an eighth embodiment of a semiconductor device of the present invention.

FIG. 6 is a diagram showing a layer structure of a main part of a ninth embodiment of the semiconductor device of the present invention;

FIG. 7 is a diagram showing a layer structure of a main part of a twelfth embodiment of a semiconductor device of the present invention.

FIG. 8 is a diagram showing a layer structure of a main part of a thirteenth embodiment of a semiconductor device of the present invention.

FIG. 9 is a diagram showing a layer structure of a main part of a fifteenth embodiment of the semiconductor device of the present invention.

FIG. 10 is a diagram showing a layer structure of a main part of an eighteenth embodiment of the semiconductor device of the present invention.

FIG. 11 is a diagram showing a layer structure of a main part of a semiconductor device according to a twenty-first embodiment of the present invention.

FIG. 12 is a diagram showing a layer structure of a main part of a semiconductor device according to a twenty-second embodiment of the present invention.

FIG. 13 is a diagram showing a layer structure of a main part of a conventional semiconductor device.

FIG. 14 is a diagram showing a layer structure of a main part of a conventional semiconductor device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Semiconductor substrate (III-V compound semiconductor layer containing In) 3 In-diffusion prevention layer which consists of II-VI compound containing Te 4 II-VI compound semiconductor thin film layer 5 InP substrate (III-V group containing In) Compound semiconductor layer) 8 In diffusion preventing layer made of ZnSeTe 9 Zn _0.48 Cd _0.52 Se layer (II-VI compound semiconductor thin film layer) 10 Semiconductor surface layer containing Al or Ga 11 Semiconductor surface layer made of AlGaInAs 12 Semiconductor containing Sb Surface layer 13 InAs substrate 14 InAs buffer layer 15 Semiconductor surface layer composed of InPSb 16 ZnSe _0.1 Te _0.9 layer 17 Semiconductor surface layer composed of GaInPSb 18 Semiconductor surface layer composed of GaAs 19 In diffusion prevention layer composed of ZnTe 20 InN layer (Group III) Semiconductor layer made of nitride semiconductor)

Claims (8)

[Claims] An In diffusion comprising a III-V compound semiconductor layer containing In, a II-VI compound semiconductor thin film layer, and a II-VI compound semiconductor containing Te formed between the semiconductor layers. A semiconductor device comprising: a prevention layer. 2. A III-V compound semiconductor layer containing In, a II-VI compound semiconductor thin film layer, and a III-V compound semiconductor containing Al or Ga formed between these semiconductor layers. A semiconductor device comprising: a semiconductor surface layer. 3. A semiconductor comprising a group III-V compound semiconductor layer containing In, a group II-VI compound semiconductor thin film layer, and a group III-V compound semiconductor not containing In and formed between the semiconductor layers. A semiconductor device comprising a surface layer. 4. A III-V compound semiconductor layer containing In, a II-VI compound semiconductor thin film layer, and a semiconductor surface formed between these semiconductor layers and made of a III-V compound semiconductor containing Sb. And a semiconductor device. 5. A semiconductor device comprising: a group III-V compound semiconductor layer containing In; a group II-VI compound semiconductor thin film layer; and a semiconductor layer formed between the semiconductor layers and made of a group III nitride semiconductor. A semiconductor device characterized by the above-mentioned. 6. The device according to claim 1, wherein a surface of the III-V compound semiconductor layer containing In on the side of the II-VI compound semiconductor thin film layer is a slightly inclined surface. Semiconductor device. 7. A surface of the III-V compound semiconductor layer containing In which faces the II-VI compound semiconductor thin film layer on the side of (11)
1) The B-side surface.
3. The semiconductor device according to claim 1. 8. The method according to claim 1, wherein the surface of the In-containing III-V compound semiconductor layer is cleaned using a molecular beam containing a group V element and atomic hydrogen. A method for manufacturing a semiconductor device, comprising manufacturing a semiconductor device.