JP2000031253A - Substrate processing device and method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To effectively cool down the substrate so as to keep it at a proper temperature when a diamond film is deposited on an Si substrate through a plasma CVD method, and to restrain the substrate from being deformed due to a thermal expansion difference between the substrate and the diamond film. SOLUTION: The upside 11A of a substrate support pad 11 is previously curved so as to compensate for the deformation of a substrate due to a thermal expansion difference between the substrate 13 and a diamond film. The substrate 13 is chucked by the curved support pad upside 11A and kept curved, and a diamond film is formed on the curved surface of the substrate. When the diamond film is formed on the substrate 13, a jet of temperature-controlled cooling gas or cooling liquid is made to hit at a high speed against several spots on the underside of the substrate 13 to efficiently cool down the substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention generally relates to a CV
The present invention relates to a technique for forming a film of another substance on a substrate such as Si by a method such as D or PVD, and particularly to a technique for improving the yield, quality and quality of a formed product.

[0002]

2. Description of the Related Art Japanese Patent Application Laid-Open No. Hei 8-236509 discloses that when a semiconductor substrate is subjected to plasma processing in a vacuum chamber, a heat transfer gas is interposed between the substrate and a support to improve heat conduction between the two. Thus, a technique for preventing overheating of a substrate due to plasma heat in a chamber is disclosed. And preferably, the pressure of the heat transfer gas is increased,
It is disclosed that the distance between the substrate and the support is equal to or less than the mean free path of the gas. Furthermore, the surface of the support table is designed in a convex shape in advance so that the substrate does not bend due to gas pressure and the distance to the support table changes, and stress is applied to the substrate by pressing the substrate against this convex surface. It is also disclosed that this stress can be used to counter the gas pressure.

[0003]

For example, when a diamond film is formed on the surface of a silicon substrate by thermal plasma, the plasma temperature in the chamber is as high as 2000 ° C., whereas the plasma temperature in the chamber is very high. Temperature is 1000 ° C
You need to keep it back and forth. Therefore, the substrate must be cooled to a temperature as low as about 1000 K with respect to the plasma temperature. However, if a heat transfer gas is simply interposed between the substrate and the support base as in the related art, such a cooling effect can be obtained. Difficult to get. If the heat transfer gas is not devised so as to immediately remove heat from the substrate, it is difficult to satisfy the above conditions, and problems such as red heat of the substrate, erosion, and film formation failure occur.

When a film of another material is formed on a substrate, if the coefficient of thermal expansion between the substrate material and the film material is significantly different,
When cooled to room temperature after film formation, the entire substrate bends.
For example, as shown in FIG. 1A, a diamond film 3 is formed on a flat silicon substrate 1 at a substrate temperature of 1000.degree.
It is assumed that it is formed under the condition of 00 ° C. Since the coefficient of thermal expansion of the substrate 1 is larger than that of the diamond film 3, when the product after the film formation is cooled to room temperature, as shown in FIG. The product bends. Since this bent state is a state in which a considerable stress is applied to the substrate and the film, if mechanical processing such as polishing of the film is performed in a later step, there is a problem that the film is peeled or the substrate is broken. Occurs.

[0005] A vacuum chuck or an electrostatic chuck is used as a chuck mechanism for fixing a substrate to a substrate support table. Although the electrostatic chuck has several advantages over the vacuum chuck, it is necessary to form an electrostatic chuck circuit on the support table. Heat exchange with the substrate is not sufficient.

Accordingly, an object of the present invention is to effectively cool a substrate to a desired temperature in a film forming process at a high temperature.

Another object of the present invention is to prevent the bending of a film-formed product due to a difference in thermal expansion between a film and a substrate.

Still another object of the present invention is to improve the structure and manufacturing method of the electrostatic chuck of the substrate support so that the thermal resistance is extremely small.

[0009]

According to a first aspect of the present invention, when a substrate is fixed to a substrate support for forming a film on the substrate, as shown in FIG. Then, the substrate 1 is fixed in a state of being intentionally curved. The direction (concave or convex) and the magnitude of this curvature are different from those shown in FIG. 1 due to the difference in the coefficient of thermal expansion between the substrate 1 and the film 3 when the substrate 1 is removed from the support after the film is formed and cooled to room temperature. The substrate 1 is selected so as to return to a flat shape as shown in FIG. This allows
Since unnatural stress is not applied to the product after film formation, problems such as peeling of the film and cracking of the substrate during polishing of the film do not occur.

As a means for fixing the substrate, a vacuum chuck or an electrostatic chuck can be used.

In a preferred embodiment, the magnitude of the curvature when the substrate is fixed can be adjusted optimally.

According to a second aspect of the present invention, a temperature-controlled fluid (gas or liquid) is applied to a surface opposite to a processing surface of a substrate during film formation or other processing of the substrate. ) Is applied directly or indirectly. Thus, heat can be efficiently exchanged between the fluid and the substrate, so that the substrate temperature can be easily controlled to an appropriate temperature. For example, even in a very high temperature environment such as 2000 ° C., such as when a film is formed on a substrate by plasma CVD,
The substrate can be effectively cooled to a much lower temperature, such as around 1000 ° C.

A substrate support according to a third aspect of the present invention comprises:
A base plate, a temperature control device for controlling the temperature of the base plate, and an electrostatic chuck circuit formed on the base plate are provided. According to this substrate support, the electrostatic chuck circuit is formed on the base plate whose temperature is adjusted by, for example, a film forming method such as CVD, PVD, or thermal spraying. Very thin, up to several hundred μm, and the coupling between the electrostatic chuck circuit and the base plate and the coupling between the electrode film and the insulating film in the electrostatic chuck circuit are close, so that the thermal resistance is small and the heat exchange efficiency is high Is obtained.

[0014]

FIG. 3 is a sectional view of a substrate support of a substrate processing apparatus according to a first embodiment of the present invention, and FIG. 4 is a plan view of the support.

The substrate support 11 shown in FIGS. 3 and 4 is installed in a chamber (not shown). This chamber is used for forming a polycrystalline diamond film on a silicon substrate surface by a plasma CVD method or a hot filament CVD method. Above the support base 11 in the chamber, a heat source device such as a plasma generator or a hot filament (not shown) is arranged.

The substrate support 11 has a circular plane shape,
The upper surface 11A is concavely curved as shown in FIG. The silicon substrate 13 to be processed is similarly fixed to the concavely curved upper surface 11A in a concavely curved state by vacuum suction. Then, a polycrystalline diamond film is formed on the upper surface 13A of the silicon substrate 13 curved in a concave shape. The magnitude (curvature) of the curvature of the upper surface 11A of the support base 11 is determined by the thermal expansion of the silicon substrate 13 after the diamond film is formed, when the silicon substrate 13 is cooled to room temperature in accordance with the principle shown in FIG. The difference is determined so that the substrate 13 becomes just flat. For example, (1) substrate material: Si (thickness 0.5 mm) (2) film material: polycrystalline diamond film (average film thickness 0.0
(3) Substrate temperature during film formation: 1200 ° C. (4) Room temperature: 20 ° C. (5) Substrate size: 3 inches in diameter (76.2 mm in diameter) (6) Substrate cooling gas: flat under the condition of helium When a diamond film is formed on the substrate 13, the substrate 13 is bent (projected toward the diamond film) with a difference in height between the center and the periphery of about 1.3 mm. Therefore, under these film forming conditions, the upper surface 1
The magnitude (curvature) of the curvature of 1A is determined so that the difference in height between the center and the periphery becomes 1.3 mm, which is the same as the amount of bending. As a result, the substrate 13 after film formation is supported on the support 11
It becomes flat when it is taken off and cooled to room temperature. (Generally, the magnitude of the curvature is determined mainly based on the size of the substrate and the materials of the substrate and the film. If the coefficient of thermal expansion of the film is larger than the substrate, the curvature is Conversely, it becomes convex upward.)

A vacuum chuck groove 17 for vacuum-sucking the substrate 13 is carved on the upper surface 11A of the support base 11, and the vacuum chuck groove 17 is connected to a vacuum chuck pump (not shown). A fluid passage (not shown) circulates inside the support base 11 in order to adjust the temperature of the support base 11 itself, and a fluid whose temperature has been adjusted flows through the fluid passage. It is kept at a certain temperature. A substrate cooling gas (for example, helium) is provided below the upper plate 15 that provides the upper surface 11A of the support 11.
Gas pipes 21 and 23 for circulating water are arranged. One gas pipe 21 covers the entire lower surface of the upper plate 15, and a gas flow path in the gas pipe 21 communicates with a large number of through-holes 19 formed throughout the upper plate 15. The gas pipe 21 is connected to the gas circulation pump 3 via a pipe 27.
1 is connected to the entrance. The outlet of the pump 31 is connected to the inlet of a gas temperature controller 33 for cooling the substrate cooling gas to a predetermined temperature.
Is connected through a pipe 29 to the other gas pipe 23 described above. The other gas pipe 23 is housed inside the one gas pipe 21 described above, and has many gas impingement nozzles 25. The large number of nozzles 25 are inserted into the large number of through holes 19 of the upper plate 15 of the support base 11, and the tip of the nozzle 25 is connected to the lower surface 13B
, And faces the substrate lower surface 13B. Since the outer diameter of the nozzle 25 is smaller than the inner diameter of the through hole 19, a space 35 through which gas can pass is provided between the outer surface of the nozzle 25 and the inner surface of the through hole 19.

At the time of film formation, the substrate 13 is attracted to the upper surface 11A of the support base 11, and a high temperature of about 2000 ° C. is generated above the substrate 13 by plasma heat or filament heat.
Using this high temperature, diamond CVD is performed on the upper surface of the substrate 13. At the same time, the gas circulation pump 31 and the gas temperature controller 33 are operated, and a number of gas impingement nozzles 25 move to a plurality of locations on the substrate lower surface 13B.
A jet of the substrate cooling gas is made to impinge. This gas jet collides with the substrate lower surface 13B at a high speed, instantaneously removes the heat of the substrate 13, and immediately
A escapes from the nozzle A to the gas temperature controller 33 through the space 35 between the nozzle 25 and the through hole 19 and the pipe 21. The jet of the fluid that collides with the substrate 13 in this manner is referred to as an “impingement jet” in this specification. The impinging jet of the cooling gas collides with the substrate 13 at a high speed and departs at a high speed, so that a high cooling effect is obtained. As a result, the substrate 13 is maintained at a temperature of about 1000 ° C. suitable for diamond film formation. Is done.

Using this embodiment, a polycrystalline diamond film is actually formed on the silicon substrate 13 under the specific film forming conditions described above, and after the film is cooled to room temperature,
Polishing was applied to the diamond film surface. as a result,
No damage occurred during the polishing process. On the other hand, a polycrystalline diamond film was formed on a flat silicon substrate under the same film forming conditions, and after cooling to room temperature, the surface of the diamond film was polished. In eight of the substrates, peeling of the film and cracking of the substrate occurred. Further, in the above-described embodiment, the film formation test was performed with the cooling gas interposed only between the substrate and the support for the purpose of heat transfer without using the impinging jet during the film formation. The temperature rose remarkably, the substrate glowed red or melted, and film formation failed. From these tests, the effect of the above embodiment was demonstrated.

FIG. 5 is a sectional view of a substrate support according to another embodiment of the present invention, and FIG. 6 is a plan view of the same.

In this embodiment, the substrate support 41 has an electrode 45 constituting an electrostatic chuck circuit in an upper plate 43 thereof.
The substrate 13 is attracted by the electrostatic chuck. Except for the structure of the upper plate 43, the configuration of other parts is basically the same as that of the first embodiment shown in FIGS.

Since the upper plate 43 of the support 41 has an electrostatic chuck circuit in which the electrodes 45 and 47 are sealed in an insulator, the upper plate 43 of the support 11 has heat conduction like the upper plate 15 of the support 11 of the first embodiment. Unlike those that can be made of highly conductive metals, so that the heat resistance is as low as possible and the heat exchange rate is good,
The configuration of the part of the electrostatic chuck circuit should be devised.
From this viewpoint, for example, configurations as shown in FIGS. 7 and 8, respectively, can be adopted.

The upper plate 43 shown in FIG. 7 is joined to the lower gas pipe 21 to form a ceiling wall of the gas pipe 21. 53 are formed, electrodes 45 and 47 as conductive thin films having a predetermined pattern are formed on the upper surface of the insulating film 53, and an insulating thin film 55 is formed again on the upper surfaces thereof. The thickness (film pressure) of the electrostatic chuck circuit (that is, the laminate of the insulating film 53, the electrodes 45 and 47, and the insulating film) formed by using such a film forming technique is about several tens to several hundreds of microns. Since it can be very thin, its thermal resistance is very small and a good heat exchange rate can be achieved.

The upper plate 43 shown in FIG. 8 is formed on an extremely thin high melting point metal plate 57 by an electrostatic chuck circuit (that is, the insulating film 53, the electrodes 45 and 47, and the insulating film 55) in the same manner as in FIG. The high melting point metal plate 57 is joined to the metal plate 51 having excellent thermal conductivity, which is the ceiling wall of the gas pipe 21, by a method such as brazing. is there.

FIG. 9 is a sectional view of a substrate support according to a third embodiment of the present invention, and FIG. 10 is a plan view of the support. FIG. 11 is a cross-sectional view showing the structure of a substrate support column used in the support base.

The substrate support 61 fixes the substrate 13 by vacuum suction. However, the substrate support 61 does not directly adhere to the upper surface of the upper plate 63, but is provided in a large number on the upper surface of the upper plate 63. The substrate 13 is adsorbed on the front end of the substrate support column 69. That is, the air passage 67 passes through the inside of the upper plate 63, and the air passage 67 is connected to a vacuum chuck pump (not shown). As shown in FIG. 11, each of the substrate support columns 69 is inserted into a mounting hole 63 </ b> B penetrated through the upper side wall 63 </ b> A of the upper plate 63 and reaches the inside of the air passage 67. A suction hole 71 penetrating from the upper end to the lower end of each substrate support column 69 passes through the substrate support column 69, and the suction hole 71 communicates with the air passage 67 in the upper plate 63. Therefore, each substrate support column 69
Can vacuum-suck the substrate 13 at its upper end surface. Further, each substrate support column 69 has a male screw portion 69A,
The male screw portion 69A is screwed into a nut 73 rotatably incorporated in the upper part of the mounting hole 63B of the upper plate 63. By turning the nut 73, the upper plate 63 of the substrate support column 69 is turned.
By adjusting the amount of protrusion (height) from the upper surface, the degree of curvature (curvature) of the substrate 13 during film formation can be optimized according to conditions.

The upper surface of the upper plate 63 of the substrate support 61 and the substrate 1
Although there is a gap between the nozzle 3 and the nozzle 3, the jet of the cooling gas from the nozzle 25 collides with the lower surface of the substrate 13 to take heat, and immediately escapes through the passage between the through hole 19 and the nozzle 25. This is similar to the other embodiments described above. A ring-shaped bank 65 is provided on the periphery of the upper plate 63 of the substrate support table 61.
When the substrate 13 is sucked, the bank 65
Is in close contact with the lower surface of the peripheral portion of the substrate 13 to seal the gap between the substrate 13 and the support 61 from the chamber space.

FIG. 12 is a sectional view of a substrate support provided with an electrostatic chuck according to still another embodiment of the present invention.

The substrate support 81 has a base plate 83 having high rigidity and high thermal conductivity for providing the required rigidity to the support 81, and a fluid passage 75 is provided inside the base plate 83. And the temperature-controlled fluid is passed through the fluid passage 83,
The temperature of the substrate support 81 is maintained at an appropriate temperature. Depending on the application, by flowing a temperature control fluid through the fluid passage 83, not only the substrate support 81 but also the temperature of a substrate (not shown) thereon can be controlled. But,
In applications such as diamond film formation by plasma CVD, it is desirable to provide a special temperature control mechanism (not shown) for the substrate, separately from the fluid passage 83, and in particular, to use the fluid as described in the previous embodiment. What impinges an impingement jet against a substrate is preferred.

On the upper surface of the base plate 83, an electrostatic chuck circuit 87 is formed by using a film forming method such as CVD, PVD or thermal spraying. That is, first, an insulating film 89 is formed on the upper surface of the base plate 83, and the insulating film 8 is formed.
9, electrode films 91 and 93 are formed, and an insulating film 95 is formed thereon so as to cover the electrode films 91 and 93.
When the base plate 83 is made of a conductive material such as a metal or a carbon material, and particularly when a high voltage is applied to the electrostatic chuck circuit 87, the base plate 83 is provided outside the base plate 83 in order to prevent discharge. The entire surface is covered with the insulating film 97. This base plate 83
May be formed together with the insulating films 89 and 95 in the step of forming the electrostatic chuck circuit 87, or in a separate step, a similar film forming method or a coating method. May be used.

As described above, the total thickness T of the electrostatic chuck circuit 87 formed by the film forming method is several tens μm.
m to several hundred μm, the thermal resistance is very small,
Therefore, a good heat exchange rate can be realized. In addition, since the formed electrostatic chuck circuit 87 does not contain impurities between it and the base plate 3 and between layers such as an insulating film and an electrode film in the circuit 87, it is possible to make full use of the Fidelwars force. And the bonding force is strong, and a chemical or physical reaction occurs at the boundary with the base plate 87 to form an alloy layer.
Further, since the film material enters into the irregularities on the surface of the base plate 87 and serves as an anchor, a high adhesion to the base plate 3 can be obtained. This also contributes to reducing the thermal resistance and has the effect of increasing the mechanical rigidity.

The specific materials of each part are as follows.

The base plate is desirably made of a material having good heat conductivity, mechanical strength suitable for a structural material, and high heat resistance. For example, a metal material such as aluminum, stainless steel, tungsten, molybdenum, or copper; a carbon material such as graphite or amorphous carbon; or a ceramic material such as alumina, alumina tride, silicon carbide, silicon nitride, or boronantride may be used. it can.

The electrode films 91 and 93 are formed by CVD, PVD,
A conductive material which can be formed into a film by a method such as thermal spraying and which can obtain a sufficient adhesive force at the time of film formation is desirable. For example, a metal material such as aluminum, stainless steel, tungsten, molybdenum, or copper, or a carbon material such as graphite or amorphous carbon can be used.

The insulating films 89, 95 and 97 are desirably made of a material having high heat resistance and excellent electrical insulation, for example, ceramic materials such as alumina, alumina tride, silicon carbide, silicon nitride and boronantride. .

FIG. 13 is a sectional view of a substrate support having an electrostatic chuck circuit according to still another embodiment.

The substrate support table 101 includes a base plate 103 and an electrostatic chuck circuit 107 (insulating films 109 and 115 and electrode films 111 and 113) formed on the base plate 103 by the same film forming method as described above. Having. The outer surface of the base plate 103 may be
It is covered with the insulating film 117. The substrate support 101
Is fixed to the chamber 105 using bolts and nuts, for example. The chamber 105 of the substrate support 101
A temperature-controlled fluid is sprayed on the bottom surface exposed to the outside in order to control the temperature of the substrate support 101 itself. Depending on the application, the temperature of the substrate (not shown) can be adjusted not only by the substrate support 101 but also by spraying the temperature adjusting fluid. However, in applications such as diamond film formation by plasma CVD, it is desirable to provide a special temperature control mechanism (not shown) for the substrate separately. In particular, the impingement jet of a fluid as described above is applied to the substrate. Those that collide are preferred.

FIG. 14 is a sectional view of a substrate support having an electrostatic chuck circuit according to another embodiment.

In the substrate support table 121, two layers of heater circuits 125 and 127 are first formed on the base plate 123 by a film forming method such as CVD, PVD or thermal spraying, and an electrostatic chuck circuit is formed thereon. 145 is formed. In the film forming process of the heater circuits 125 and 127,
First, the insulating film 131 is formed on the base plate 123, the first heating wire film 133 is formed thereon, and the insulating film 135 is formed so as to cover the first heating wire film 133, and the first layer is formed thereon. The second-layer heating wire film 137 is formed so as to cover the gap between the heating wire films 133, and the insulating film 139 is formed so as to cover the second heating wire film 137. Then, the electrostatic chuck circuit 129 is formed thereon by the above-described film forming process. The heating wire film 133 of the first layer and the heating wire film 137 of the second layer may be the same circuit or different circuits. The outer surface of the base plate 123 is covered with an insulating film 147 as necessary. Although not shown, a fluid circuit for adjusting the temperature of the support table 121 and the substrate thereon is also provided.

The materials of the heating wire films 133 and 137 are as follows.
A conductive material that can be formed into a film by a method such as CVD, PVD, or thermal spraying, and that can provide a sufficient adhesive force at the time of film formation is desirable. For example, a metal material such as aluminum, stainless steel, tungsten, molybdenum, or copper, or a carbon material such as graphite or amorphous carbon can be used.

The two-layer heater circuits 125 and 127 are not necessarily required.
Is not necessary, and only the heater circuit 125 of one layer may be used. The stacking order of the heater circuits 125 and 127 and the electrostatic chuck circuit 129 does not need to be as in this embodiment, but may be another order.

As described above, the heater circuit 12 is formed by the film forming method.
When the heater circuits 125 and 127 are formed, the thickness of the heater circuits 125 and 127 becomes extremely thin, and the bonding of the respective layers is also improved. Therefore, the same advantages as in the case where the electrostatic chuck circuit is formed by the film forming method can be obtained. it can.

When the heater circuits 125 and 127 are incorporated in the substrate support, the temperature can be adjusted flexibly by combining the heater circuits 125 and 127 and a fluid circuit (not shown). That is, since the output heat amounts of the heater circuits 125 and 127 can be electrically and quickly and accurately adjusted, various temperature controls as described below can be performed by using the heat amounts. For example, rapid heating can be achieved by rapidly increasing the power supplied to the heater circuits 125 and 127. In addition, the heating can be further promoted by reducing the flow rate of the fluid in the fluid circuit or purging the fluid (for example, when the fluid is a liquid, replacing it with a gas or the like). Further, from the state where both the cooling by the fluid circuit and the heating of the heater circuits 125 and 127 are performed with a large amount of heat, the heater circuits 125 and 127 are changed.
If the amount of heating is rapidly reduced, rapid cooling can be achieved.
Further, the cooling by the fluid circuit and the heater circuits 125, 127
By changing the amount of electric power supplied to the heater circuits 125 and 127 in accordance with changes in process conditions and the like while simultaneously performing the heating by heating, the temperature can be accurately and constantly maintained. In addition, while simultaneously performing cooling by the fluid circuit and heating by the heater circuits 125 and 127, the amount of heating by the heater circuits 125 and 127 is changed to be larger or smaller than the amount of cooling by the fluid circuit, thereby obtaining an overall state. Can smoothly transition from cooling to heating and from heating to cooling.

FIG. 15 is a sectional view of a substrate support provided with an electrostatic chuck according to still another embodiment.

In the substrate support 151, an electrostatic chuck circuit and a heater circuit are formed on the base layer 153 in the same layer 155 by a film forming method such as CVD, PVD or thermal spraying. That is, the base plate 15
3, an insulating film 157 is formed thereon, and electrode films 161 and 163 of the electrostatic chuck and a heating wire film 165 are formed thereon in a predetermined pattern, respectively, and the insulating film is formed thereon so as to cover them. 159 is formed. Base plate 1
The outer surface of 53 is covered with an insulating film 167 as necessary. Although not shown, a fluid circuit for adjusting the temperature of the support 151 and the substrate thereon is also provided.

Although the embodiments of the present invention have been described above, these embodiments are merely examples for describing the present invention, and are not intended to limit the present invention only to these embodiments. Therefore, the present invention can be implemented in various modes other than the above-described embodiment. For example, in order to cool the substrate, an impingement jet of a cooling liquid may be used instead of the gas. Further, the jet of cooling gas or liquid may be applied to the upper plate of the substrate support base from below without directly applying the substrate, and heat exchange between the substrate and the impingement jet may be performed through the upper plate. . Specific details such as the piping structure of the cooling gas or the cooling liquid in the substrate support, the structure of the chuck, the structure of the substrate support column, and the mechanism for adjusting the height thereof are different from those in the above embodiment. Can be adopted. In some applications, it may be necessary to heat the substrate on the substrate support, which may also use a fluid impinge jet in accordance with the principles of the present invention.

[Brief description of the drawings]

FIG. 1 is an explanatory view showing a conventional problem.

FIG. 2 is an explanatory diagram showing the principle of the present invention.

FIG. 3 is a sectional view of a substrate support of the substrate processing apparatus according to the first embodiment of the present invention.

FIG. 4 is a plan view of the support base.

FIG. 5 is a sectional view of a substrate support of the substrate processing apparatus according to the second embodiment of the present invention.

FIG. 6 is a plan view of the support base.

FIG. 7 is a cross-sectional view illustrating a configuration example of an electrostatic chuck circuit.

FIG. 8 is a sectional view showing another configuration example of the electrostatic chuck circuit.

FIG. 9 is a sectional view of a substrate support of a substrate processing apparatus according to a third embodiment of the present invention.

FIG. 10 is a plan view of the support base.

FIG. 11 is a sectional view of a support column.

FIG. 12 is a sectional view of a substrate support of a substrate processing apparatus according to a fourth embodiment of the present invention.

FIG. 13 is a sectional view of a substrate support of a substrate processing apparatus according to a fifth embodiment of the present invention.

FIG. 14 is a sectional view of a substrate support of a substrate processing apparatus according to a sixth embodiment of the present invention.

FIG. 15 is a sectional view of a substrate support of a substrate processing apparatus according to a seventh embodiment of the present invention.

[Explanation of symbols]

1, 13 Substrate 3 Polycrystalline diamond film 11, 41, 61, 81, 101, 121, 141 Substrate support 15, 43, 63 Upper plate of substrate support 17 Vacuum chuck groove 19 Through hole 21, 23 Substrate cooling gas Piping 25 Gas impingement nozzle 31 Gas circulation pump 33 Gas temperature controller 87, 107, 129, 155 Electrostatic chuck circuit 45, 47, 91, 93, 111, 113 Electrodes of electrostatic chuck circuit 53, 55, 89, 95, 109, 115, 145, 1
57, 159 Insulating film of electrostatic chuck circuit 71 Substrate support column 125, 127 Heater circuit 133, 137, 165 Heating wire of heater circuit

Claims (24)

[Claims] A substrate support having a fixing part for fixing the substrate; and a film forming mechanism for forming a film on the substrate fixed to the substrate support, wherein the fixing part of the substrate support is provided. However, when the substrate after film formation is removed from the fixing portion and cooled to room temperature, the substrate returns to a flat shape due to a difference in coefficient of thermal expansion between the substrate and a film on the substrate. A substrate processing apparatus for fixing the substrate in a curved state. 2. The substrate processing apparatus according to claim 1, wherein the fixing unit has a vacuum chuck for vacuum-sucking the substrate. 3. The substrate processing apparatus according to claim 1, wherein said fixing unit has an electrostatic chuck circuit for electrostatically attracting said substrate. 4. The substrate processing apparatus according to claim 1, wherein the fixing unit has a variable mechanism that can change a degree of curvature of the substrate. 5. The substrate processing apparatus according to claim 1, further comprising a mechanism for applying a temperature-controlled fluid impingement jet to a surface of the substrate fixed to the substrate support. 6. A substrate support having a fixing portion for fixing a substrate, a processing mechanism for performing a predetermined process on the substrate fixed to the substrate support, and a processing mechanism for fixing the substrate fixed to the substrate support. Against the surface
And a mechanism for applying a temperature-controlled fluid impingement jet. 7. A fixing unit for fixing the substrate when forming a film on the substrate, wherein the fixing unit removes the substrate after film formation from the fixing unit and cools the substrate to room temperature. A substrate supporter that fixes the substrate in a curved state so that the substrate returns to a flat shape due to a difference in thermal expansion coefficient between the substrate and a film on the substrate. 8. The substrate support according to claim 7, wherein the fixing unit has a vacuum chuck for vacuum-sucking the substrate. 9. The substrate support according to claim 7, wherein the fixing unit has an electrostatic chuck circuit for electrostatically adsorbing the substrate. 10. The substrate support according to claim 7, wherein the fixing unit has a variable mechanism that can change a degree of curvature of the substrate. 11. The fixed substrate surface,
8. The substrate support according to claim 7, further comprising a mechanism for applying an impingement jet of a fluid whose temperature has been adjusted. 12. A fixed portion for fixing the substrate when performing predetermined processing on the substrate, and a mechanism for applying an impingement jet of a temperature-controlled fluid to a surface of the fixed substrate. Substrate support. 13. While forming a film on a substrate, when the substrate after film formation is released from the fixation and cooled to room temperature, the coefficient of thermal expansion between the substrate and the film on the substrate is reduced. A method of supporting a substrate during film formation, comprising: fixing the substrate in a curved state so that the substrate returns to a flat shape due to the difference. 14. The method of claim 13, further comprising the step of varying the amount of curvature of the substrate. 15. With respect to the surface of the fixed substrate,
15. The method of claim 14, further comprising the step of applying an impingement jet of the temperature-regulated fluid. 16. A method of controlling a substrate temperature during substrate processing, comprising applying an impingement jet of a temperature-controlled fluid to a surface of the substrate when performing predetermined processing on the substrate. 17. A substrate support, comprising: a base plate; a temperature adjusting device for adjusting a temperature of the base plate; and an electrostatic chuck circuit for fixing a substrate formed on the base plate. 18. The substrate support according to claim 17, further comprising another temperature control device for controlling the temperature of the substrate. 19. The substrate support according to claim 17, wherein the temperature control device causes the temperature-controlled fluid to act on the base plate so that the fluid can exchange heat. 20. The substrate support according to claim 17, further comprising a heater circuit formed on the base plate. 21. The substrate support according to claim 20, wherein the heater circuit is formed on the base plate. 22. The substrate support according to claim 21, wherein the electrostatic chuck circuit and the heater circuit are stacked. 23. The substrate support according to claim 21, wherein said electrostatic chuck circuit and said heater circuit are formed as the same layer. 24. A method of manufacturing a substrate support, comprising: forming an electrostatic chuck circuit for fixing a substrate on a base plate; and providing a temperature adjusting device for adjusting the temperature of the base plate. .