GB2479081A - Display device having plastics substrate formed on carrier substrate with adhesive adjusting layer - Google Patents
Display device having plastics substrate formed on carrier substrate with adhesive adjusting layer Download PDFInfo
- Publication number
- GB2479081A GB2479081A GB1109811A GB201109811A GB2479081A GB 2479081 A GB2479081 A GB 2479081A GB 1109811 A GB1109811 A GB 1109811A GB 201109811 A GB201109811 A GB 201109811A GB 2479081 A GB2479081 A GB 2479081A
- Authority
- GB
- United Kingdom
- Prior art keywords
- adhesive
- layer
- display area
- substrate
- plastic substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 239
- 239000000853 adhesive Substances 0.000 title claims abstract description 143
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 143
- 239000004033 plastic Substances 0.000 title claims abstract description 137
- 229920003023 plastic Polymers 0.000 title claims abstract description 137
- 238000004519 manufacturing process Methods 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 30
- 239000010409 thin film Substances 0.000 claims abstract description 20
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims abstract description 8
- 239000003960 organic solvent Substances 0.000 claims abstract description 8
- 238000005507 spraying Methods 0.000 claims abstract description 5
- 238000005096 rolling process Methods 0.000 claims abstract description 4
- 239000007921 spray Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 67
- 238000002161 passivation Methods 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000005520 cutting process Methods 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 38
- 239000010410 layer Substances 0.000 description 166
- 229910010272 inorganic material Inorganic materials 0.000 description 34
- 239000011147 inorganic material Substances 0.000 description 34
- 239000012790 adhesive layer Substances 0.000 description 32
- 239000007769 metal material Substances 0.000 description 28
- 239000000049 pigment Substances 0.000 description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 229910021417 amorphous silicon Inorganic materials 0.000 description 20
- 239000010949 copper Substances 0.000 description 16
- 239000003990 capacitor Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000000151 deposition Methods 0.000 description 11
- 239000002775 capsule Substances 0.000 description 10
- ZPZCREMGFMRIRR-UHFFFAOYSA-N molybdenum titanium Chemical compound [Ti].[Mo] ZPZCREMGFMRIRR-UHFFFAOYSA-N 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 238000012643 polycondensation polymerization Methods 0.000 description 5
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 238000002679 ablation Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- -1 AINd) Chemical compound 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000006068 polycondensation reaction Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 229960001296 zinc oxide Drugs 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133351—Manufacturing of individual cells out of a plurality of cells, e.g. by dicing
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
- G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/1675—Constructional details
- G02F1/16755—Substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/1675—Constructional details
- G02F1/16757—Microcapsules
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/28—Adhesive materials or arrangements
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electrochemistry (AREA)
- Molecular Biology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
A method of fabricating a display device comprises forming an adhesive adjusting layer 205 of an adhesive improving material on a carrier substrate 201 having a display area DA and a non-display area NA surrounding the display area. The adhesive improving material includes an amino silane material and an organic solvent. A plastics substrate 210 is formed on the adhesive adjusting layer and a plurality of elements for displaying images are formed on the plastic substrate. The carrier substrate and the plastic substrate are cut to divide the display area and the non-display area and the carrier substrate is detached from the plastic substrate. The adhesive adjusting layer may be formed by spraying, coating or rolling and may be formed in the whole display area with a spray. The display may have an electrophoretic film 277. The plurality of elements can comprise a gate line, a data line 229 and a thin film transistor (TFT) Tr.
Description
METHOD OF FABRICATING DISPLAY DEVICE USING PLASTIC SUBSTRATE
100011 The present invention claims the benefit of Korean Patent Application No. 10-2009-0100464, filed in Korea on October 21, 2009, which is hereby incorporated by reference in its entirety.
BACKGROUND OF THE INVENTION
FIELD OF THE INVENTION
10002] The present invention relates to a method of fabricating a display device, and more particularly, to a method of fabricating a display device using a flexible plastic substrate.
DISCUSSION OF THE RELATED ART
100031 Display devices typically include liquid crystal display (LCD) devices, plasma display panel (PDP) devices and organic electroluminescent display (OELD) devices.
Recently, various display devices have been suggested to satisfy diverse users' need.
Specifically, display devices having a light weight, a thin profile and a high efficiency and providing a full color moving image have been widely researched by virtue of enhancement and portability in utilization of information.
100041 An electrophoretic display (EPD) device has been the subject of recent research due to its portability. Since the EPD device does not require a polarizing plate, a backlight unit and a liquid crystal layer, the fabrication cost of the EPD device is reduced.
I
100051 FIG. 1 is a cross-sectional view showing an electrophoretic display device according to the related art.
100061 In FIG. 1, an electrophoretic display device 1 includes first and second substrates 11 and 36 and an ink layer 57 between the first and second substrates 11 and 36. The ink layer 57 includes a plurality of capsules 63, and each capsule 63 includes a plurality of white pigments 59 and a plurality of black pigments 61. The plurality of white pigments 59 and the plurality of black pigments 61 are charged by condensation polymerization (polycondensation). For example, the plurality of white pigments 59 may be charged negatively and the plurality of black pigments 61 may be charged positively. The plurality of capsules 63 may have a uniform size through a filtering process. A plurality of pixel electrodes 28 connected to a plurality of thin film transistors (TFTs) (not shown) are formed on the first substrate 11. One of a positive voltage (+) and a negative voltage (-) is selectively supplied to each of the plurality of pixel electrodes 28 by the plurality of TFTs.
The EPD device 1 utilizes an ambient light including a natural light and an indoor light as a light source, and the plurality of pixel electrodes 28 induce the movement of the plurality of white pigments 59 and the plurality of black pigments 61, thereby displaying images or texts.
[00071 When an electric field generated by the positive voltage (+) and the negative voltage (-) is applied to the ink layer 57, the plurality of white pigments 59 and the plurality of black pigments 61 move to the plurality of pixel electrodes 28 having an opposite polarity.
For example, when the positive voltage (+) is applied to the plurality of pixel electrodes 28 in a pixel region, the plurality of white pigments 59 may move to the plurality pixel electrodes 28 and the plurality of black pigments 61 may move to the second substrate 36, thereby the pixel region displaying a black image. In addition, when the negative voltage (-) is applied to the plurality of pixel electrodes 28 in the pixel region, the plurality of black pigments 61 may move to the plurality of pixel electrodes 28 and the plurality of white pigments 59 may move to the second substrate 36, thereby the pixel region displaying a white image.
100081 The EPD device I may be fabricated through an array process and a film deposition process. The plurality of TFTs and the plurality of pixel electrodes 28 are formed on the first substrate 11 through the array process, and an electrophoretic film (not shown) is attached to the first substrate having the plurality of TFTs and the plurality of pixel electrodes 28 through the film deposition process.
100091 The EPD device may be widely used as an electronic book (e-book) or an electronic paper (e-paper) due to their low power consumption, light weight and thin profile.
Specifically, when the EPD device is used as an e-paper, flexibility is required for portability. As a result, the EPD device includes a plastic substrate having a thickness of about 1 Oj.xm to about 20011m as a base substrate for the purpose of maximizing the flexibility.
Since the plastic substrate is too flexible to have a sufficient flatness on a stage during a fabrication process for the EPD device, the fabrication process is performed to the plastic substrate attached to an additional carrier substrate and the carrier substrate is removed after the fabrication process, thereby the EPD device completed.
100101 FIGs. 2A to 2D are cross-sectional views showing a fabrication process of an array substrate for an electrophoretic display device according to the related art.
[00111 In FIG. 2A, an ablation layer 7 is formed on a carrier substrate 5 having a display area DA by depositing hydrogenated intrinsic amorphous silicon (a-Si:H). The carrier substrate 5 may be a glass substrate through which a laser beam can penetrate.
[0012] In FIG. 2B, a plastic substrate 11 is formed on the ablation layer 7 by sequentially coating and heating liquid plastics.
10013] In FIG. 2C, a plurality of gate lines (not shown), a plurality of data lines 19, a thin film transistor (TFT) Tr and a pixel electrode 28 are formed on the plastic substrate 11.
The plurality of gate lines cross the plurality of data lines 19, and the TFT Tr includes a gate electrode 14, a gate insulating layer 13, a semiconductor layer 18 including an active layer 1 8a and an ohmic contact layer I 8b, a source electrode 20 and a drain electrode 22. In addition, the pixel electrode 28 is connected to the drain electrode 22.
[00141 In FIG. 2D, a laser beam LB from a laser apparatus 99 is irradiated onto an outer surface of the ablation layer 7 through the carrier substrate 5, and hydrogen (H), such as hydrogen gas erupts from the hydrogenated intrinsic amorphous silicon of the ablation layer 7. As a result, the plastic substrate 11 having the TFT Tr is detached from the carrier substrate 5.
[0015] Although not shown, a film deposition process is performed to the plastic substrate 11 detached from the carrier substrate 5. For example, an electrophoretic film including an ink layer and a common electrode may be attached to the plastic substrate having the TFT Tr and a protecting film may be attached to the electrophoretic film through the film deposition process, thereby an electrophoretic display (EPD) device is completed.
[0016] In the fabrication process for an EPD according to the related art, however, since the laser apparatus 99 having a relatively high price is used to detach the plastic substrate 11 from the carrier substrate 5, the fabrication cost for the EPD device increases. In addition, since it may take about 10 minutes to about 30 minutes to irradiate the whole carrier substrate 5 with the laser beam LB, the productivity is reduced. Further, since irradiation of the laser beam LB causes deterioration of the TFT Tr and break of the plurality of gate lines and the plurality of data lines 19, the production yield is reduced.
SUMMARY OF THE INVENTION
10017] Accordingly, the present invention is directed to a method of fabricating a display device that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
100181 The present invention seeks to provide a method of fabricating a display device where fabrication cost is reduced and productivity and production yield are improved by detaching a plastic substrate from a carrier substrate without using a laser apparatus.
(0019] Features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. Other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
10020] To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described herein, a method of fabricating a display device comprises: forming an adhesive layer of an inorganic material on a carrier substrate having a display area and a non-display area surrounding the display area; forming a plurality of adhesive patterns of a metallic material on the adhesive layer, each of the plurality of adhesive patterns having a width and a height; forming a plastic substrate on the adhesive layer and the plurality of adhesive patterns; forming a plurality of elements for displaying images on the plastic substrate; cutting the carrier substrate and the plastic substrate to divide the display area and the non-display area; and detaching the carrier substrate from the plastic substrate, wherein the adhesive force of the adhesive layer to the carrier substrate is weaker than the adhesive force of the adhesive patterns to the carrier substrate.
[00211 Further, the carrier substrate may be made of glass, the inorganic material may include one of silicon oxide (Si02) and silicon nitride (SiNx), and the metallic material may include one of molybdenum (Mo), molybdenum tungsten (MoW), aluminum (Al), aluminum alloy, copper (Cu), molybdenum titanium (MoTi), amorphous indium-tin-oxide (a-ITO) and indium-gallium-zinc-oxide (IGZO).
100221 Further, the width may be within a range of about 1tm to about 500tm, and the height may be within a range of about 50A to about 1 50A.
100231 Further, an area ratio of the plurality of adhesive patterns to the display area may be within a range of about 1% to about 10%.
[0024] Further, an average adhesive force between the carrier substrate and the plastic substrate may be within a range of about 1 Ogf/cm2 to about 1 OOgf/cm2.
100251 Moreover, each of the plurality of adhesive patterns may have a rectangular ring shape in the non-display area to surround the display area.
100261 Further, each of the plurality of adhesive patterns may be arranged in a manner of stripe or matrix shape.
100271 Further, forming the plurality of elements may comprise: forming a gate line, a data line crossing the gate line to define a pixel region and a thin film transistor on the plastic substrate, the thin film transistor including a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode; forming a passivation layer on the thin film transistor, the passivation layer having a drain contact hole exposing the drain electrode; and forming a pixel electrode in the pixel region on the passivation layer, the pixel electrode connected to the drain electrode through the drain contact hole.
[0028] Further, forming the plurality of elements further comprises: forming an electrophoretic film on the pixel electrode; forming a color filter layer on the electrophoretic film; and forming a protecting layer on the color filter layer.
[0029] Further, the electrophoretic film may include an bonding layer on the pixel electrode, an ink layer on the bonding layer, a common electrode on the ink layer and a base film on the common electrode, the ink layer including a plurality of capsules each having a plurality of white pigments and a plurality of black pigments charged by condensation polymerization.
[00301 In another aspect, a method of fabricating a display device includes: forming an adhesive adjusting layer of an adhesive improving material on a carrier substrate having a display area and a non-display area surrounding the display area., the adhesive improving material including an amino silane material and an organic solvent; forming a plastic substrate on the adhesive adjusting layer; forming a plurality of elements for displaying images on the plastic substrate; cutting the carrier substrate and the plastic substrate to divide the display area and the non-display area; and detaching the carrier substrate from the plastic substrate.
[0031] Further, the method of fabricating a display device may further comprise drying the adhesive adjusting layer before forming the plastic substrate.
100321 Further, the adhesive improving material may include about 0.1% to about 10% by weight of the amino silane material and about 90% to about 99.9% by weight of the organic solvent.
[0033] Further, the adhesive adjusting layer may be formed in the non-display area with one process selected from spraying, coating and rolling.
[0034] Further, the adhesive adjusting layer may be formed in the whole display area with a spray.
[00351 Further, forming the plurality of elements may comprise: forming a gate line, a data line crossing the gate line to define a pixel region and a thin film transistor on the plastic substrate, the thin film transistor including a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode; forming a passivation layer on the thin film transistor, the passivation layer having a drain contact hole exposing the drain electrode; and forming a pixel electrode in the pixel region on the passivation layer, the pixel electrode connected to the drain electrode through the drain contact hole.
100361 In another aspect, a method of fabricating a display device includes: forming an inorganic material layer on a carrier substrate having a display area and a non-display area surrounding the display area; forming an adhesive pattern on the inorganic material layer, the adhesive pattern is configured to reinforce an adhesive force of the inorganic material layer to a plastic; forming a plastic substrate on the inorganic material layer and the adhesive pattern; forming a plurality of elements for displaying images on the plastic substrate; dividing the display area and the non-display area; and detaching the carrier substrate from the plastic substrate.
100371 Further, the adhesive pattern may be made of metal material.
100381 Further, the adhesive pattern may be arranged in a dot shape.
100391 Further, an area ratio of the adhesive pattern to the display area may be within a range of about 1% to about 10%.
100401 Further, the adhesive pattern may have a radius of about 1 p.m to about 500p.m.
100411 It is apparent to those skilled in the art that various modifications, variations and combinations can be made based on the above features.
[00421 It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
BRIEF DESCRIPTION OF THE DRAWINGS
[0043] The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention. In the drawings: [00441 FIG. 1 is a cross-sectional view showing an electrophoretic display device according to the related art; 10045] FIGs. 2A to 2D are cross-sectional views showing a fabrication process of an array substrate for an electrophoretic display device according to the related art; [00461 FIGs. 3A to 3K are cross-sectional views showing a method of fabricating an electrophoretic display device according to a first embodiment of the present invention; 10047] FIGs. 4A to 4C are plane views showing a plurality of adhesive patterns of an electrophoretic display device according to a first embodiment of the present invention; 100481 FIGs. 5A to 5C are cross-sectional views showing a method of fabricating an electrophoretic display device according to a second embodiment of the present invention; and 100491 FIG. 6 is a perspective view showing a method of fabricating an electrophoretic display device according to a third embodiment of the present invention.
DETAiLED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS [0050] Reference will now be made in detail to the illustrated embodiments of the present invention, which are illustrated in the accompanying drawings.
[0051] An inorganic material and a metallic material used for an adhesive adjusting layer between a carrier substrate and a plastic substrate in a method of fabricating a display device according to a first embodiment of the present invention will be illustrated hereinafter.
100521 TABLE 1 shows a contact angle at which a liquid or vapor interface meets the solid surface and an adhesive force between a plastic substrate and various materials.
[TABLE 1]
Material Contact angle (°, degree) Adhesive force (gf/cm2) silicon oxide (Si02) 52.4 3.39 silicon nitride (SiNx) 48.1 3.58 amorphous indium-tin-oxide (a-ITO) 6.2 554.68 aluminum alloy (e.g., A1Nd) 5.6 132.82 copper (Cu) 2.5 immeasurable (over 600) molybdenum titanium (MoTi) 8.7 328.54 A figure given in gram-force per centimetre-squared (gf/cm2) can be converted to Newtons per metre-squared (N/rn2) by multiplying the figure by 10 x g, g' being the local acceleration of an object due to gravity.
[00531 As shown in TABLE 1, the contact angle of the inorganic material such as silicon oxide (Si02) and silicon nitride (SiNx) with respect to the plastic substrate 110 (of FIG. 3C) is relatively great. For example, the contact angle of an inorganic material with respect to the plastic substrate 110 may be greater than about 45°. Since the inorganic material has a relatively great contact angle with respect to the plastic substrate 110, a cohesive force of the inorganic material to the plastic substrate 110 is relatively small. As a result, an adhesive force of an inorganic material to the plastic substrate 110 is smaller than about 5gflcm2.
[0054] In addition, the contact angle of the metallic material such as amorphous indium-tin-oxide (a-ITO), aluminum alloy (e.g.,A1Nd), copper (Cu) and molybdenum titanium (MoTi) with respect to the plastic substrate 110 is relatively small. For example, the contact angle of a metallic material with respect to the plastic substrate 110 may be smaller than about 100. As a result, an adhesive force of a metallic material to the plastic substrate 110 is greater than about 1 OOgf/cm2.
100551 Since the inorganic material and the metallic material have different adhesive forces to the plastic substrate 110, an adhesive adjusting layer having an optimum adhesive force to the plastic substrate 110 may be obtained by forming an inorganic material area and a metallic material area with a predetermined ratio. For example, an adhesive force between a carrier substrate 101 (of FIG. 3A) and the plastic substrate 110 may be controlled by forming an adhesive layer 102 (of FIG. 3A) and a plurality of adhesive patterns 105 (of FIG. 3B) between the carrier substrate 101 and the plastic substrate 110 with an area ratio of an inorganic material area to a metallic material area within a range of about 99:1 to about 90:10 in a display area.
100561 When the adhesive layer 102 of the inorganic material having a relatively small adhesive force to the plastic substrate 110 and the plurality of adhesive patterns 105 of the metallic material having a relatively great adhesive force to the plastic substrate 110 are formed to have an area ratio of an inorganic material area to a metallic material area within a range of about 99:1 to about 90:10 in the display area, the adhesive force between the carrier substrate 101 and the plastic substrate 110 may be within a range of about 1 Ogf/cm2 to about I OOgf/cm2. In an embodiment of the present invention, an average adhesive force between the carrier substrate 101 and the plastic substrate 110 may be about 2Ogf/cm2 by controlling the ratio of the inorganic material area to the metallic material area in the display area according to the adhesive layer 102 and the plurality of adhesive patterns 105.
[0057] As a comparison example, the adhesive force of a post-it is within a range of about 23gflcm2 to about 26gfIcm2, and an adhesive force of a magic tape is within a range of about 1 9Ogf/cm2 to about 200gf/cm2. Since the adhesive force between the carrier substrate 101 and the plastic substrate 110 is similar to the adhesive force of the post-it, peeling and separation of the plastic substrate 110 from the carrier substrate 101 are prevented during an array process, and the plastic substrate 110 is easily detached from the carrier substrate 101 by hand or other means such as a clamp after the array process.
100581 Since the carrier substrate 101 made of glass has a flat and smooth surface, the adhesive force between the carrier substrate 101 and the plastic substrate 110 without an intervening layer is within a range of about 7gf/cm2 to about 8gf/cm2. As a result, when the plurality of adhesive patterns 105 are omitted in the array process, the plastic substrate 110 may be partially separated from the carrier substrate 101 to cause deterioration of patterns and break of the plastic substrate 110.
100591 In an embodiment of the present invention, the adhesive adjusting layer including the adhesive layer 102 of the inorganic material arid the plurality of adhesive patterns 105 of the metallic material may be formed between the carrier substrate 101 and the plastic substrate 110 to have a predetermined ratio of the inorganic material area to the metallic material area in the display area. The plurality of adhesive patterns 105 of the metallic material are formed on the adhesive layer 102 and are arranged in a manner of line shape having a width of about 1 jim to about 500pm. Further, the ratio of the metallic material area by the plurality of adhesive patterns 105 to the display area of the plastic substrate 110 is less than 10%, for example, within a range of about 1% to about 10%, and the ratio of the inorganic material area by the adhesive layer 102 not overlapped with the plurality of adhesive patterns 105 to the display area is more than about 90%, for example, within a range of about 90% to about 99%. Accordingly, the average adhesive force between the carrier substrate 101 and the plastic substrate 110 may be within a range of about lOgf/cm2 to about lOOgf/cm2 due to the adhesive adjusting layer. In another embodiment, each of the plurality of adhesive patterns may have a dot shape having a diameter of about 1 p.m to about 500p.m, but the present invention is not limited to this.
100601 FIGs. 3A to 3K are cross-sectional views showing a method of fabricating an electrophoretic display device according to a first embodiment of the present invention. A fabrication process for an electrophoretic display device including a plastic substrate may be divided into an array process, a film deposition process and a cell process. A plurality of elements for displaying images such as a gate line, a data line, a thin film transistor, a pixel electrode and an electrophoretic film may be formed on the plastic substrate through the array process and the film deposition process. In addition, the plastic substrate is cut and a carrier substrate is detached from the plastic substrate through the cell process.
100611 In FIG. 3A, an adhesive layer 102 of an inorganic material is formed on a carrier substrate 101 having a display area DA displaying images and a non-display area NA surrounding the display area DA. For example, the inorganic material may include one of silicon oxide (Si02) and silicon nitride (SiNx), and the carrier substrate 101 may be made of a glass. The adhesive layer 102 may be formed on the carrier substrate 101 by depositing the inorganic material.
100621 In FIG. 3B, a plurality of adhesive patterns 105 of a metallic material are formed on the adhesive layer 1102. For example, the metallic material may include one of molybdenum (Mo), molybdenum tungsten (MoW), aluminum (Al), aluminum alloy such as aluminum neodymium (e.g. AINd), copper (Cu), molybdenum titanium (MoTi), amorphous indium-tin-oxide (a-ITO) and indium-gallium-zinc-oxide (JGZO). After a first metal layer (not shown) is formed on the adhesive layer 102 by depositing the metallic material, the first metal layer may be patterned by coating a photoresist, exposing the photoresist, etching the first metal layer and stripping the photoresist to form the plurality of adhesive patterns 105.
The plurality of adhesive patterns 105 may be arranged in a manner of stripe or matrix shape or dot shape and may constitute unevenly on the adhesive layer 102.
100631 When the plurality of adhesive patterns 105 are arranged in stripe or matrix shape, each of the plurality of adhesive patterns 105 may have a width of about I tm to about 500pm and a height of about soA to about 1 SOA. When each of the plurality of adhesive patterns 105 has a width smaller than about 1 rim, the plastic substrate 11 may be easily separated from the carrier substrate 101 during the array process because the adhesive force between the carrier substrate 101 and a plastic substrate 110 (of FIG. 3C) is too weak.
As a result, the array process may not be completed. In addition, when each of the plurality of adhesive patterns 105 has a width greater than about 500j.tm, the plastic substrate 110 may be broken while the plastic substrate 110 is detached from the carrier substrate 101 after the array process because the adhesive force between the carrier substrate 101 and the plastic substrate 110 is too strong. Since the tensile force for detaching the plastic substrate from the carrier substrate 101 should be greater than the adhesive force between the carrier substrate 101 and the plastic substrate 110, the plastic substrate 110 may be torn due to the tensile force.
[0064] In FIG. 3C, after a plastic layer (not shown) is formed on the adhesive layer 102 and the plurality of adhesive patterns 105 by coating a liquid plastic, the plastic layer is cured by a heat or an ultraviolet (UV) ray to form the plastic substrate 110. The plastic substrate 110 has a thickness of about 10tm to about lOOjim. The plastic substrate 110 functions as a base substrate for a display device such as an electrophoretic display (EPD) device.
100651 In FIG. 3D, after a second metal layer (not shown) is formed on the plastic substrate 110 by depositing a metallic material such as aluminum (Al), aluminum (Al) alloy, copper (Cu), copper (Cu) alloy, chromium (Cr) and titanium (Ti) alloy, a gate line (not shown), a gate electrode 113 connected to the gate line and a first capacitor electrode 115 are formed in the display area DA on the plastic substrate 110 by patterning the second metal layer. The first capacitor electrode 115 may be a portion of a common line (not shown) parallel to the gate line and a previous gate line. In the first embodiment, the first capacitor electrode 115 is a portion of the common line.
100661 In FIG. 3E, a gate insulating layer 120 is formed on the gate line, gate electrode 113 and the first capacitor electrode 115 by depositing an inorganic insulating material such as silicon oxide (Si02) and silicon nitride (SiNx). After an intrinsic amorphous silicon layer (not shown) and an impurity-doped amorphous silicon layer (not shown) are formed on the gate insulating layer 120 by sequentially depositing intrinsic amorphous silicon and impurity-doped amorphous silicon, an active layer 125a and an impurity-doped amorphous silicon pattern 1 25b are formed on the gate insulating layer 120 over the gate electrode 113 by patterning the impurity-doped amorphous silicon layer and the intrinsic amorphous silicon layer.
10067] In FIG. 3F, after a third metal layer (not shown) is formed on the gate insulating layer 120, the active layer 125a and the impurity-doped amorphous silicon pattern 125b by depositing a metallic material such as molybdenum (Mo), copper (Cu), titanium (Ti) alloy and aluminum (Al) alloy, a data line 129, a source electrode 130, a drain electrode 132 and a second capacitor electrode 134 are formed in the display area DA by patterning the third metal layer. The data line 129 crosses the gate line and the source electrode 130 is connected to the data line 129. The source and drain electrodes 130 and 132 are spaced apart from each other on the impurity-doped amorphous silicon pattern 125b. The second capacitor electrode 134 is connected to the drain electrode 132 and is formed on the gate insulating layer 120 to correspond to the first capacitor electrode 115. The first and second capacitor electrodes 115 and 134 and the gate insulating layer 120 between the first and second capacitor electrodes 115 and 134 constitute a storage capacitor StgC. Further, the gate electrode 113, the gate insulating layer 120, the semiconductor layer 125, the source electrode 130 and the drain electrode 132 constitute a thin film transistor (TFT) Tr.
[0068] In addition, a portion of the impurity-doped amorphous silicon pattern 125b not overlapped with the source and drain electrodes 130 and 132 is removed through a dry etching method so that the active layer 1 25a between the source and drain electrodes 130 and 132 can be exposed. As a result, an ohmic contact layer 125b contacting the source and drain electrodes 130 and 132 is formed on the active layer 125a. The active layer 125a and the ohmic contact layer 125b constitute a semiconductor layer 125.
[0069J Although the semiconductor layer 125 and the source and drain electrodes 130 and 132 are formed through a two-mask process in the first embodiment, the semiconductor layer 125 and the source and drain electrodes 130 and 132 may be formed through a one-mask process in another embodiment. For example, after an intrinsic amorphous silicon layer, an impurity-doped amorphous silicon layer and a third metal layer are sequentially formed on the gate insulating layer 120, a photoresist pattern including portions of different thicknesses may be formed on the third metal layer using a photo mask having a transmissive area, a blocking area and a half-transmissive area. The half-transmissive area may be formed by a diffraction pattern such as a slit or a halftone pattern. The intrinsic amorphous silicon layer, the impurity-doped amorphous silicon layer and the third metal layer are patterned using the photoresist pattern as an etching mask to form an active layer.
After the photoresist pattern is partially removed by an ashing method, the impurity-doped amorphous silicon layer and the third metal layer are patterned using the partially removed photoresist pattern as an etching mask to form an ohmic contact layer and source and drain electrodes. Since the semiconductor layer including the intrinsic amorphous silicon layer and the impurity-doped amorphous silicon layer and the third metal layer are patterned using the single photo mask, a semiconductor pattern is formed between a data line and the gate insulating layer 120.
10070] In FIG. 3G, a passivation layer 140 is formed on the data line 129, the source electrode 130, the drain electrode 132 and the second capacitor electrode 134 by depositing an organic insulating material such as benzocyclobutene (BCB) and acrylic resin. The passivation layer 140 may planarize the plastic substrate 110 having the data line 129, the TFT Tr and the storage capacitor StgC to have a flat top surface. Next, the passivation layer is patterned and a drain contact hole exposing the drain electrode 132 of the TFT Tr is formed in the passivation layer 140.
[00711 In another embodiment, a first auxiliary passivation layer may be formed under the passivation layer 140 by depositing an inorganic insulating material such as silicon oxide (Si02) and silicon nitride (SiNx), and a second auxiliary passivation layer may be formed on the passivation layer 140 by depositing an inorganic insulating material such as silicon oxide (Si02) and silicon nitride (SiNx). Since the contact property of the organic insulating material is poor as compared with the contact property of the inorganic insulating material, the contact between the actively layer 125a and the passivation layer 140 may degrade characteristics of the TFT Tr. Accordingly, the characteristics of the TFT Tr are improved by using the first auxiliary passivation layer between the active layer 125a and the passivation layer 140. Further, the contact property of a pixel electrode 150 (of FIG. 3H) is improved by using the second auxiliary passivation layer between the passivation layer 140 and the pixel electrode 150.
100721 In FIG. 3H, after a transparent conductive layer (not shown) is formed on the passivation layer 140 by depositing a transparent conductive material such as indium-tin-oxide (ITO), indium-zinc-oxide (IZO) and indium-tin-zinc-oxide (ITZO), a pixel electrode connected to the drain electrode 132 through the drain contact hole 142 is formed on the passivation layer 140 in the display area DA by pattering the transparent conductive layer.
100731 In FIG. 31, an electrophoretie film 177 is formed on the pixel electrode 150. The electrophoretic film 177 includes a base film 160, a common electrode 163 on the base film 160, an ink layer 173 on the common electrode 163 and an adhesive layer 175 on the ink layer 173. The base film 160 includes a flexible material such as polyethylene terephthalate (PET) and the common electrode 163 includes a transparent conductive material. The ink layer 173 includes a plurality of capsules 170, and each of the plurality of capsules 170 includes a plurality of white pigments 166 and a plurality of black pigments 168. The plurality of white pigments 166 and the plurality of black pigments 168 may be charged by condensation polymerization (polycondensation). For example, the plurality of white pigments 166 may be charged negatively and the plurality of black pigments 168 may be charged positively. The plurality of capsules 170 may have a uniform size through a filtering process. The adhesive layer 175 of the electrophoretic film 177 may be attached to the pixel electrode 150 of the plastic substrate 110 such that the ink layer 173 is disposed between the pixel electrode 150 and the common electrode 163.
100741 In FIG. 3J, the plastic substrate 110 having the electrophoretic film 177 over the carrier substrate 101 is cut along a scribing line SL (of FIG. 4A) in the non-display area NA by a cutting wheel 197 of a scribing apparatus (not shown). At a portion corresponding to the scribing line SL, since the adhesive layer 102 is disposed between the carrier substrate 101 and the plastic substrate 110 without the plurality of adhesive patterns 105, the adhesive force between the carrier substrate 101 and the plastic substrate 110 is relatively small. As a result, after the plastic substrate 110 is cut, the plastic substrate 110 may be peeled or separated from the carrier substrate 101 at the cutting surface by an external force from the cutting wheel 197.
[0075] In FIG. 3K, after the plastic substrate 110 is fixed by a vacuum or a clamp, the carrier substrate 101 is detached from the plastic substrate 110 by applying a force gradually.
In another embodiment, the detachment between the carrier substrate 101 and the plastic substrate 110 may be performed manually without using an apparatus such as clamp.
(0076] Since the detachment between the carrier substrate 101 and the plastic substrate is completed within about 20 seconds, the process time for the detachment step of the first embodiment is reduced as compared with the process time for the detachment step of the related art using a laser beam and productivity is improved.
[0077] In another embodiment, the detachment between the carrier substrate 101 and the plastic substrate 110 may be performed may be performed before the electrophoretic film 177 is formed on the pixel electrode 150 of the plastic substrate 110. In addition, after the electrophoretic film 177 is formed on the pixel electrode 150, a color filter layer and a protecting layer may be formed on the base film 160 to obtain a full color EPD device. The color filter layer may include red, green and blue color filters in a pixel region. In addition, the detachment between the carrier substrate 101 and the plastic substrate 110 may be performed after the color filter layer and the protecting layer are formed on the base film 160.
100781 FIGs. 4A to 4C are plane views showing a plurality of adhesive patterns of an electrophoretic display device according to a first embodiment of the present invention. In FIGs. 4A to 4C, a plurality of display areas DA each having a rectangular shape and a non-display area NA surrounding the plurality of display area DA are defined in a carrier substrate 101 (of FIG. 3A).
100791 In FIG. 4A, a plurality of adhesive patterns 105 each having a rectangular ring shape is formed on an adhesive layer 102 outside the plurality of display area DA and a plurality of scribing lines SL are disposed between each display area DA and each adhesive pattern 105.
100801 In FIG. 4B, a plurality of adhesive patterns 105 spaced apart from each other is formed on an adhesive layer 102 to have a stripe type. A plurality of scribing lines SL are defined to be disposed outside each display area DA.
[0081] in FIG. 4C, a plurality of adhesive patterns 105 is formed on an adhesive layer 102 to have a matrix shape, and a plurality of scribing lines SL are defined to be disposed outside each display area DA. In another embodiment, a plurality of adhesive patterns 105 may have a random dot shape.
10082] As shown in FIGs. 4A to 4C, the adhesive layer 102 is exposed out of the plurality of adhesive patterns 105. In a plane view, a total area corresponding to the exposed portion of the adhesive layer 102 of an inorganic material may be defined as an inorganic material area, and the plurality of adhesive patterns 105 of a metallic material may be defined as a metallic material area. In the first embodiment, an area ratio of the inorganic material area to the metallic material area in the display area DA may be within a range of about 99:1 to about 90:10 for an optimum adhesive force.
10083] In a method of fabricating an electrophoretic display device according to a first embodiment of the present invention, an adhesive layer 102 of an inorganic material is formed on a carrier substrate 101 and a plurality of adhesive patterns 105 having a predetermined width and a predetennined height are formed on the adhesive layer 102.
Accordingly, the plastic substrate 110 and the carrier substrate 101 are stably attached to each other during the array process, and the carrier substrate 101 is easily detached from the plastic substrate 110 by hand or means such as a clamp after the array process is completed.
100841 In another embodiment, an adhesive improving material is used for an adhesive adjusting layer to obtain an optimum adhesive force.
[00851 FIGs. 5A to 5C are cross-sectional views showing a method of fabricating an electrophoretic display device according to a second embodiment of the present invention.
[00861 In FIG. 5A, an adhesive adjusting layer 205 is formed on a carrier substrate 201 by dispensing an adhesive improving material with a syringe 298 in a spraying process. In another embodiment, the adhesive adjusting layer 205 may be formed by coating the adhesive improving material with a brush or a roller in a coating or rolling process. The adhesive adjusting layer 205 may be dried by heat and may have a predetermined pattern.
[0087] The adhesive improving material may include an amino silane material ((RO)3-Si-R-NH2) and an organic solvent such as l-methoxy-2-propanol. Further, the amino silane material may be within a range of about 0.1% to about 10% by weight and the organic solvent may be within a range of about 90% to about 99.9% by weight. In addition, an adhesive force between the carrier substrate 201 and a plastic substrate 210 (of FIG. 5C) may be within a range of about I Ogf/cm2 to about I OOgf/cm2 by the adhesive adjusting layer 205.
[0088J The carrier substrate 201 includes a display area DA and a non-display area NA surrounding the display area DA, and the adhesive adjusting layer 205 is formed to be disposed in the non-display area NA. Accordingly, the adhesive adjusting layer 205 is removed after the carrier substrate 201 is cut along a scribing line. The adhesive adjusting layer 205 may be formed in the whole non-display area NA or may be partially formed in the non-display area NA. For example, the adhesive adjusting layer 205 may have a rectangular ring shape in the non-display area NA surrounding the display area DA.
100891 In FIG. SB, a plastic substrate 210 is formed on the adhesive adjusting layer 205 and the carrier substrate 201. A gate line (not shown), a data line 229 and a thin film transistor (TFT) Tr including a gate electrode 213, a gate insulating layer 220, a semiconductor layer 225, a source electrode 230 and a drain electrode 232 are formed on the plastic substrate 210 and a passivation layer 240 is formed on the data line 229 and the TFT Ti. In addition, a pixel electrode 250 is formed on the passivation layer 240, and an electrophoretic film 277 including a base film 260, a common electrode 263, an ink layer 273 and an adhesive layer 275 is formed on the pixel electrode 250. The base film 260 includes a flexible material such as polyethylene terephthalate (PET) and the common electrode 263 includes a transparent conductive material. The ink layer 273 includes a plurality of capsules 270, and each of the plurality of capsules 270 includes a plurality of white pigments 266 and a plurality of black pigments 268. The plurality of white pigments 266 and the plurality of black pigments 268 may be charged by condensation polymerization (polycondensation). The adhesive layer 275 of the electrophoretic film 277 may be attached to and contact the pixel electrode 250 of the plastic substrate 210 such that the ink layer 273 is disposed between the pixel electrode 250 and the common electrode 263.
100901 In FIG. 5C, after the plastic substrate 210 having the electrophoretic film 277 over the carrier substrate 201 is cut along a scribing line in the non-display area NA, the plastic substrate 210 is fixed by a vacuum or a clamp, the carrier substrate 201 is detached from the plastic substrate 210 by applying a force gradually. Since the adhesive adjusting layer 205 provides an optimum adhesive force between the plastic substrate 210 and the carrier substrate 201, the plastic substrate 210 and the carrier substrate 201 are stably attached to each other during the array process, and the carrier substrate 201 is easily detached from the plastic substrate 210 by hand or means such as a clamp after the array process is completed.
[0091J When a color filter layer and a protecting layer are formed on the base film 360 to obtain a full color EPD device, the detachment between the carrier substrate 201 and the plastic substrate 210 may be performed after the color filter layer and the protecting layer are formed on the base film 360.
100921 FIG. 6 is a perspective view showing a method of fabricating an electrophoretic display device according to a third embodiment of the present invention.
[0093] In FIG. 6, an adhesive adjusting layer 207 is formed on a whole carrier substrate 201 by spraying an adhesive improving material with a spray 294. An adhesive force between the carrier substrate 201 and the plastic substrate (not shown) may be determined according to the composition ratio of the adhesive improving material and the amount of the sprayed adhesive improving material.
[00941 As in the second embodiment, the adhesive improving material may include about 0.1% to about 10% by weight of an amino silane material ((RO)3-Si-R'-NH2) and about 90% to about 99.9% by weight of an organic solvent such as 1 -methoxy-2-propanol.
In addition, the adhesive force between the carrier substrate 201 and the plastic substrate may be within a range of about 1 Ogf/cm2 to about 1 OOgf/cm2 by the adhesive adjusting layer 207. For example, when the adhesive improving material including about 1% by weight of an amino silane material ((RO)3-Si-R'-N112) and about 99% by weight of 1-methoxy-2-propanol is used for the adhesive adjusting layer 207, the adhesive force between the carrier substrate 201 and the plastic substrate may be 2Ogf/cm2.
100951 In the first to third embodiments of the present invention, an electrophoretic display device is formed on the plastic substrate attached to the carrier substrate. In another embodiment, the other display device such as a liquid crystal display (LCD) device and an organic electroluminescent display (OELD) device may be formed on the plastic substrate attached to the carrier substrate using the adhesive adjusting layer or the adhesive adjusting pattern, and the carrier substrate may be detached from the plastic substrate without using a laser apparatus after the array process is completed.
100961 A fabrication process for an LCD device including a plastic substrate may be divided into an array process, a color filter process and a cell process. A plurality of elements for displaying images such as a gate line, a data line, a thin film transistor, a pixel electrode, a common electrode, a color filter layer and a liquid crystal layer may be formed on the plastic substrate through the array process and the color filter process. In addition, the plastic substrate is cut and a carrier substrate is detached from the plastic substrate through the cell process.
100971 Further, a fabrication process for an OELD device including a plastic substrate may be divided into an array process and a cell process. A plurality of elements for displaying images such as a gate line, a data line, a thin film transistor and an organic electroluminescent diode may be formed on the plastic substrate through the array process, and the plastic substrate is cut and a carrier substrate is detached from the carrier substrate through the cell process.
10098] It will be apparent to those skilled in the art that various modifications and variations can be made in the method of fabricating a display device using a plastic substrate of the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
10099] This application discloses: 1. A method of fabricating a display device, comprising: forming an adhesive layer of an inorganic material on a carrier substrate having a display area and a non-display area surrounding the display area; forming a plurality of adhesive patterns of a metallic material on the adhesive layer, each of the plurality of adhesive patterns having a width and a height; forming a plastic substrate on the adhesive layer and the plurality of adhesive patterns; forming a plurality of elements for displaying images on the plastic substrate; cutting the carrier substrate and the plastic substrate to divide the display area and the non-display area; and detaching the carrier substrate from the plastic substrate, wherein the adhesive force of the adhesive layer to the carrier substrate is weaker than the adhesive force of the adhesive patterns to the carrier substrate.
2. A method according to paragraph 1, wherein the carrier substrate is made of glass, the inorganic material includes one of silicon oxide (Si02) and silicon nitride (SiNx), and the metallic material includes one of molybdenum (Mo), molybdenwn tungsten (MoW), aluminum (Al), aluminum alloy, copper (Cu), molybdenum titanium (MoTi), amorphous indium-tin-oxide (a-ITO) and indium-gallium-zinc-oxide (IGZO).
3. A method according to paragraph I or 2, wherein the width is within a range of about ilim to about 500tm, and the height is within a range of about 50A to about 150A.
4. A method according to paragraph 1, 2 or 3, wherein an area ratio of the plurality of adhesive patterns to the display area is within a range of about 1% to about 10%.
5. A method according to any one of paragraphs 1 to 4, wherein an average adhesive force between the carrier substrate and the plastic substrate is within a range of about 1 Ogff cm2 to about I OOgf/cm2.
6. A method according to any one of paragraphs I to 5, wherein each of the plurality of adhesive patterns has a rectangular ring shape in the non-display area to surround the display area.
7. A method according to any one of paragraphs Ito 6, wherein each of the plurality of adhesive patterns is arranged in a manner of stripe or matrix shape.
8. A method according to any one of paragraphs I to 7, wherein forming the plurality of elements comprises: forming a gate line, a data line crossing the gate line to define a pixel region and a thin film transistor on the plastic substrate, the thin film transistor including a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode; forming a passivation layer on the thin film transistor, the passivation layer having a drain contact hole exposing the drain electrode; and forming a pixel electrode in the pixel region on the passivation layer, the pixel electrode connected to the drain electrode through the drain contact hole.
9. A method according to paragraph 8, wherein forming the plurality of elements further comprises: forming an electrophoretic film on the pixel electrode; forming a color filter layer on the electrophoretic film; and forming a protecting layer on the color filter layer.
10. A method according to paragraph 9, wherein the electrophoretic film includes a bonding layer on the pixel electrode, an ink layer on the bonding layer, a common electrode on the ink layer and a base film on the common electrode, the ink layer including a plurality of capsules each having a plurality of white pigments arid a plurality of black pigments charged by condensation polymerization.
17. A method of fabricating a display device, comprising: forming an inorganic material layer on a carrier substrate having a display area and a non-display area surrounding the display area; forming an adhesive pattern on the inorganic material layer, the adhesive pattern is configured to reinforce an adhesive force of the inorganic material layer to a plastic; forming a plastic substrate on the inorganic material layer and the adhesive pattern; forming a plurality of elements for displaying images on the plastic substrate; dividing the display area and the non-display area; and detaching the carrier substrate from the plastic substrate.
18. A method according to paragraph 17, wherein the adhesive pattern is made of metal material.
19. A method according to paragraph 17 or 18, wherein the adhesive pattern has a dot shape.
20. A method according to paragraph 19, wherein an area ratio of the adhesive pattern to the display area is within a range of about 1% to about 10%.
21. A method according to paragraph 19 or 20, wherein the adhesive pattern has a radius of about ltm to about 500 Jtm.
22. A device fabricated according to a method of any one of paragraphs ito 21.
23. A method of fabricating a display device, substantially as hereinbefore described with reference to any of Figures 3A to 6 of the accompanying drawings.
24. A device fabricated according to a method substantially as hereinbefore described with reference to any of Figures 3A to 6 of the accompanying drawings.
Claims (6)
- CLAIMS: 1. A method of fabricating a display device, comprising: forming an adhesive adjusting layer of an adhesive improving material on a carrier substrate having a display area and a non-display area surrounding the display area, the adhesive improving material including an amino silane material and an organic solvent; forming a plastics substrate on the adhesive adjusting layer; forming a plurality of elements for displaying images on the plastics substrate; cutting the carrier substrate and the plastics substrate to divide the display area and the non-display area; and detaching the carrier substrate from the plastics substrate.
- 2. A method according to claim 1, further comprising drying the adhesive adjusting layer before forming the plastics substrate.
- 3. A method according to claim 1 or 2, wherein the adhesive improving material includes 0.1% to 10% by weight of the amino silane material and 90% to 99.9% by weight of the organic solvent.
- 4. A method according to claim 1, 2 or 3, wherein the adhesive adjusting layer is formed in the non-display area with one process selected from spraying, coating and rolling.
- 5. A method according to any one of claims I to 4, wherein the adhesive adjusting layer is formed in the whole display area with a spray.
- 6. A method according to any one of claims 1 to 5, wherein forming the plurality of elements comprises: forming a gate line, a data line crossing the gate line to define a pixel region and a thin film transistor on the plastics substrate, the thin film transistor including a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode; forming a passivation layer on the thin film transistor, the passivation layer having a drain contact hole exposing the drain electrode; and forming a pixel electrode in the pixel region on the passivation layer, the pixel electrode connected to the drain electrode through the drain contact hole.
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KR1020090100464A KR101617280B1 (en) | 2009-10-21 | 2009-10-21 | Methode of fabricating display device using flexible plastic substrate |
GB1011788.5A GB2474737B (en) | 2009-10-21 | 2010-07-13 | Method of fabricating display device using plastic substrate |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013082377A1 (en) * | 2011-12-01 | 2013-06-06 | Avery Dennison Corporation | Backplane for electrophoretic display |
US11444255B2 (en) | 2017-05-18 | 2022-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing display device, display device, display module, and electronic device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050023525A1 (en) * | 2000-09-14 | 2005-02-03 | Semiconductor Energy Laboratory Co. Ltd., A Japan Corporation | Semiconductor device and manufacturing method thereof |
WO2007083906A1 (en) * | 2006-01-18 | 2007-07-26 | Lg Chem, Ltd. | Pressure sensitive adhesive for transporting flexible substrate |
EP1890326A2 (en) * | 2006-08-18 | 2008-02-20 | Princo Corp. | Structure combining an IC integrated substrate and a carrier, and method of manufacturing such structure |
EP1976001A2 (en) * | 2007-03-26 | 2008-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
-
2010
- 2010-07-13 GB GB1109811.8A patent/GB2479081B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050023525A1 (en) * | 2000-09-14 | 2005-02-03 | Semiconductor Energy Laboratory Co. Ltd., A Japan Corporation | Semiconductor device and manufacturing method thereof |
WO2007083906A1 (en) * | 2006-01-18 | 2007-07-26 | Lg Chem, Ltd. | Pressure sensitive adhesive for transporting flexible substrate |
EP1890326A2 (en) * | 2006-08-18 | 2008-02-20 | Princo Corp. | Structure combining an IC integrated substrate and a carrier, and method of manufacturing such structure |
EP1976001A2 (en) * | 2007-03-26 | 2008-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
Non-Patent Citations (1)
Title |
---|
Pyralin Polyamide Coatings for Electronics VM-651 and VM-652 Adhesion Promoters, November 1997, HD MicroSystems, Available from http://www.lci.kent.edu/ipp/07/docs/MSDS_spreadsheet/Technical_Information/Polyimides/VM-65165.pdf * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013082377A1 (en) * | 2011-12-01 | 2013-06-06 | Avery Dennison Corporation | Backplane for electrophoretic display |
US10042189B2 (en) | 2011-12-01 | 2018-08-07 | Avery Dennison Retail Information Services, Llc | Backplane for electrophoretic display |
US11444255B2 (en) | 2017-05-18 | 2022-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing display device, display device, display module, and electronic device |
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GB201109811D0 (en) | 2011-07-27 |
GB2479081B (en) | 2013-09-04 |
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