GB2211991B - Electrical isolation of regions within semiconductor bodies - Google Patents
Electrical isolation of regions within semiconductor bodiesInfo
- Publication number
- GB2211991B GB2211991B GB8825311A GB8825311A GB2211991B GB 2211991 B GB2211991 B GB 2211991B GB 8825311 A GB8825311 A GB 8825311A GB 8825311 A GB8825311 A GB 8825311A GB 2211991 B GB2211991 B GB 2211991B
- Authority
- GB
- United Kingdom
- Prior art keywords
- regions
- electrical isolation
- semiconductor bodies
- bodies
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26533—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically inactive species in silicon to make buried insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB878725497A GB8725497D0 (en) | 1987-10-30 | 1987-10-30 | Isolation of silicon |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8825311D0 GB8825311D0 (en) | 1988-11-30 |
GB2211991A GB2211991A (en) | 1989-07-12 |
GB2211991B true GB2211991B (en) | 1991-02-20 |
Family
ID=10626199
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB878725497A Pending GB8725497D0 (en) | 1987-10-30 | 1987-10-30 | Isolation of silicon |
GB8825311A Expired - Fee Related GB2211991B (en) | 1987-10-30 | 1988-10-28 | Electrical isolation of regions within semiconductor bodies |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB878725497A Pending GB8725497D0 (en) | 1987-10-30 | 1987-10-30 | Isolation of silicon |
Country Status (1)
Country | Link |
---|---|
GB (2) | GB8725497D0 (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6146979A (en) | 1997-05-12 | 2000-11-14 | Silicon Genesis Corporation | Pressurized microbubble thin film separation process using a reusable substrate |
US6291326B1 (en) | 1998-06-23 | 2001-09-18 | Silicon Genesis Corporation | Pre-semiconductor process implant and post-process film separation |
US6291313B1 (en) | 1997-05-12 | 2001-09-18 | Silicon Genesis Corporation | Method and device for controlled cleaving process |
US6486041B2 (en) | 1997-05-12 | 2002-11-26 | Silicon Genesis Corporation | Method and device for controlled cleaving process |
US6500732B1 (en) | 1999-08-10 | 2002-12-31 | Silicon Genesis Corporation | Cleaving process to fabricate multilayered substrates using low implantation doses |
US6513564B2 (en) | 1999-08-10 | 2003-02-04 | Silicon Genesis Corporation | Nozzle for cleaving substrates |
US6548382B1 (en) | 1997-07-18 | 2003-04-15 | Silicon Genesis Corporation | Gettering technique for wafers made using a controlled cleaving process |
US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
US8101503B2 (en) | 1996-05-15 | 2012-01-24 | Commissariat A L'energie Atomique | Method of producing a thin layer of semiconductor material |
US8329557B2 (en) | 2009-05-13 | 2012-12-11 | Silicon Genesis Corporation | Techniques for forming thin films by implantation with reduced channeling |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2681472B1 (en) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | PROCESS FOR PRODUCING THIN FILMS OF SEMICONDUCTOR MATERIAL. |
FR2714524B1 (en) * | 1993-12-23 | 1996-01-26 | Commissariat Energie Atomique | PROCESS FOR MAKING A RELIEF STRUCTURE ON A SUPPORT IN SEMICONDUCTOR MATERIAL |
US7148119B1 (en) | 1994-03-10 | 2006-12-12 | Canon Kabushiki Kaisha | Process for production of semiconductor substrate |
JP3352340B2 (en) * | 1995-10-06 | 2002-12-03 | キヤノン株式会社 | Semiconductor substrate and method of manufacturing the same |
EP0703608B1 (en) * | 1994-09-23 | 1998-02-25 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe | Method for forming buried oxide layers within silicon wafers |
FR2756847B1 (en) | 1996-12-09 | 1999-01-08 | Commissariat Energie Atomique | METHOD FOR SEPARATING AT LEAST TWO ELEMENTS OF A STRUCTURE IN CONTACT WITH THEM BY ION IMPLANTATION |
US20070122997A1 (en) | 1998-02-19 | 2007-05-31 | Silicon Genesis Corporation | Controlled process and resulting device |
EP0889505B1 (en) * | 1997-07-03 | 2005-06-08 | STMicroelectronics S.r.l. | Process for cutting trenches in a single crystal substrate |
FR2773261B1 (en) | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | METHOD FOR THE TRANSFER OF A THIN FILM COMPRISING A STEP OF CREATING INCLUSIONS |
FR2774510B1 (en) * | 1998-02-02 | 2001-10-26 | Soitec Silicon On Insulator | PROCESS FOR TREATING SUBSTRATES, ESPECIALLY SEMICONDUCTORS |
FR2823596B1 (en) | 2001-04-13 | 2004-08-20 | Commissariat Energie Atomique | SUBSTRATE OR DISMOUNTABLE STRUCTURE AND METHOD OF MAKING SAME |
FR2823599B1 (en) | 2001-04-13 | 2004-12-17 | Commissariat Energie Atomique | DEMOMTABLE SUBSTRATE WITH CONTROLLED MECHANICAL HOLDING AND METHOD OF MAKING |
JP4277481B2 (en) * | 2002-05-08 | 2009-06-10 | 日本電気株式会社 | Semiconductor substrate manufacturing method and semiconductor device manufacturing method |
JP2004063730A (en) * | 2002-07-29 | 2004-02-26 | Shin Etsu Handotai Co Ltd | Manufacturing method for soi wafer |
US8187377B2 (en) | 2002-10-04 | 2012-05-29 | Silicon Genesis Corporation | Non-contact etch annealing of strained layers |
FR2848336B1 (en) | 2002-12-09 | 2005-10-28 | Commissariat Energie Atomique | METHOD FOR PRODUCING A STRESS STRUCTURE FOR DISSOCIATING |
FR2849017B1 (en) * | 2002-12-20 | 2005-11-18 | Michel Bruel | METHOD FOR PROCESSING A STRUCTURE FOR OBTAINING INTERNAL SPACE AND STRUCTURE HAVING INTERNAL SPACE |
FR2856844B1 (en) | 2003-06-24 | 2006-02-17 | Commissariat Energie Atomique | HIGH PERFORMANCE CHIP INTEGRATED CIRCUIT |
FR2857953B1 (en) | 2003-07-21 | 2006-01-13 | Commissariat Energie Atomique | STACKED STRUCTURE, AND METHOD FOR MANUFACTURING THE SAME |
FR2861497B1 (en) | 2003-10-28 | 2006-02-10 | Soitec Silicon On Insulator | METHOD FOR CATASTROPHIC TRANSFER OF A FINE LAYER AFTER CO-IMPLANTATION |
FR2889887B1 (en) | 2005-08-16 | 2007-11-09 | Commissariat Energie Atomique | METHOD FOR DEFERING A THIN LAYER ON A SUPPORT |
FR2891281B1 (en) | 2005-09-28 | 2007-12-28 | Commissariat Energie Atomique | METHOD FOR MANUFACTURING A THIN FILM ELEMENT |
DE102006004870A1 (en) * | 2006-02-02 | 2007-08-16 | Siltronic Ag | Semiconductor layer structure and method for producing a semiconductor layer structure |
US9362439B2 (en) | 2008-05-07 | 2016-06-07 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled shear region |
US8993410B2 (en) | 2006-09-08 | 2015-03-31 | Silicon Genesis Corporation | Substrate cleaving under controlled stress conditions |
US8293619B2 (en) | 2008-08-28 | 2012-10-23 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled propagation |
US7811900B2 (en) | 2006-09-08 | 2010-10-12 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a thick layer transfer process |
FR2910179B1 (en) | 2006-12-19 | 2009-03-13 | Commissariat Energie Atomique | METHOD FOR MANUFACTURING THIN LAYERS OF GaN BY IMPLANTATION AND RECYCLING OF A STARTING SUBSTRATE |
FR2925221B1 (en) | 2007-12-17 | 2010-02-19 | Commissariat Energie Atomique | METHOD FOR TRANSFERRING A THIN LAYER |
US8330126B2 (en) | 2008-08-25 | 2012-12-11 | Silicon Genesis Corporation | Race track configuration and method for wafering silicon solar substrates |
FR2947098A1 (en) | 2009-06-18 | 2010-12-24 | Commissariat Energie Atomique | METHOD OF TRANSFERRING A THIN LAYER TO A TARGET SUBSTRATE HAVING A THERMAL EXPANSION COEFFICIENT DIFFERENT FROM THAT OF THE THIN LAYER |
-
1987
- 1987-10-30 GB GB878725497A patent/GB8725497D0/en active Pending
-
1988
- 1988-10-28 GB GB8825311A patent/GB2211991B/en not_active Expired - Fee Related
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8101503B2 (en) | 1996-05-15 | 2012-01-24 | Commissariat A L'energie Atomique | Method of producing a thin layer of semiconductor material |
US6528391B1 (en) | 1997-05-12 | 2003-03-04 | Silicon Genesis, Corporation | Controlled cleavage process and device for patterned films |
US7759217B2 (en) | 1997-05-12 | 2010-07-20 | Silicon Genesis Corporation | Controlled process and resulting device |
US6391740B1 (en) | 1997-05-12 | 2002-05-21 | Silicon Genesis Corporation | Generic layer transfer methodology by controlled cleavage process |
US6458672B1 (en) | 1997-05-12 | 2002-10-01 | Silicon Genesis Corporation | Controlled cleavage process and resulting device using beta annealing |
US6486041B2 (en) | 1997-05-12 | 2002-11-26 | Silicon Genesis Corporation | Method and device for controlled cleaving process |
US6146979A (en) | 1997-05-12 | 2000-11-14 | Silicon Genesis Corporation | Pressurized microbubble thin film separation process using a reusable substrate |
US6291313B1 (en) | 1997-05-12 | 2001-09-18 | Silicon Genesis Corporation | Method and device for controlled cleaving process |
US6558802B1 (en) | 1997-05-12 | 2003-05-06 | Silicon Genesis Corporation | Silicon-on-silicon hybrid wafer assembly |
US6548382B1 (en) | 1997-07-18 | 2003-04-15 | Silicon Genesis Corporation | Gettering technique for wafers made using a controlled cleaving process |
US6291326B1 (en) | 1998-06-23 | 2001-09-18 | Silicon Genesis Corporation | Pre-semiconductor process implant and post-process film separation |
US6513564B2 (en) | 1999-08-10 | 2003-02-04 | Silicon Genesis Corporation | Nozzle for cleaving substrates |
US6500732B1 (en) | 1999-08-10 | 2002-12-31 | Silicon Genesis Corporation | Cleaving process to fabricate multilayered substrates using low implantation doses |
US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
US8389385B2 (en) | 2009-02-04 | 2013-03-05 | Micron Technology, Inc. | Semiconductor material manufacture |
US8329557B2 (en) | 2009-05-13 | 2012-12-11 | Silicon Genesis Corporation | Techniques for forming thin films by implantation with reduced channeling |
Also Published As
Publication number | Publication date |
---|---|
GB8825311D0 (en) | 1988-11-30 |
GB2211991A (en) | 1989-07-12 |
GB8725497D0 (en) | 1987-12-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19981028 |