GB0009911D0 - Solution processed devices - Google Patents

Solution processed devices

Info

Publication number
GB0009911D0
GB0009911D0 GBGB0009911.9A GB0009911A GB0009911D0 GB 0009911 D0 GB0009911 D0 GB 0009911D0 GB 0009911 A GB0009911 A GB 0009911A GB 0009911 D0 GB0009911 D0 GB 0009911D0
Authority
GB
United Kingdom
Prior art keywords
solution processed
processed devices
devices
solution
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0009911.9A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cambridge University Technical Services Ltd CUTS
Original Assignee
Cambridge University Technical Services Ltd CUTS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cambridge University Technical Services Ltd CUTS filed Critical Cambridge University Technical Services Ltd CUTS
Publication of GB0009911D0 publication Critical patent/GB0009911D0/en
Priority to KR1020027008126A priority Critical patent/KR100927890B1/en
Priority to PCT/GB2000/004934 priority patent/WO2001047043A1/en
Priority to BR0016660-0A priority patent/BR0016660A/en
Priority to CNB008185808A priority patent/CN100483774C/en
Priority to EP00985664A priority patent/EP1243034A1/en
Priority to BRPI0016660A priority patent/BRPI0016660B1/en
Priority to CA2829416A priority patent/CA2829416C/en
Priority to CA002394881A priority patent/CA2394881A1/en
Priority to JP2001547677A priority patent/JP2003518754A/en
Priority to AU22066/01A priority patent/AU781584B2/en
Priority to TW90109553A priority patent/TWI229884B/en
Priority to US10/176,007 priority patent/US6905906B2/en
Priority to HK03105170.8A priority patent/HK1053012B/en
Priority to US11/135,278 priority patent/US7635857B2/en
Priority to JP2013098405A priority patent/JP5658789B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Formation Of Insulating Films (AREA)
  • Ink Jet (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Electrodes Of Semiconductors (AREA)
GBGB0009911.9A 1999-12-21 2000-04-20 Solution processed devices Ceased GB0009911D0 (en)

Priority Applications (15)

Application Number Priority Date Filing Date Title
AU22066/01A AU781584B2 (en) 1999-12-21 2000-12-21 Solution processed devices
CA2829416A CA2829416C (en) 1999-12-21 2000-12-21 Solution processed devices
CA002394881A CA2394881A1 (en) 1999-12-21 2000-12-21 Solution processed devices
BR0016660-0A BR0016660A (en) 1999-12-21 2000-12-21 Method for forming a transistor, transistor, and logic circuit and display or memory device
CNB008185808A CN100483774C (en) 1999-12-21 2000-12-21 Solution processed devices
EP00985664A EP1243034A1 (en) 1999-12-21 2000-12-21 Solution processed devices
BRPI0016660A BRPI0016660B1 (en) 1999-12-21 2000-12-21 method for forming a transistor, which includes a nonpolar semiconductor layer and a polar dielectric gate layer
KR1020027008126A KR100927890B1 (en) 1999-12-21 2000-12-21 Solution processing devices
PCT/GB2000/004934 WO2001047043A1 (en) 1999-12-21 2000-12-21 Solution processed devices
JP2001547677A JP2003518754A (en) 1999-12-21 2000-12-21 Solution-processed device
TW90109553A TWI229884B (en) 2000-04-20 2001-04-20 Solution processed devices
US10/176,007 US6905906B2 (en) 1999-12-21 2002-06-21 Solution processed devices
HK03105170.8A HK1053012B (en) 1999-12-21 2003-07-17 Semiconductor device and forming method thereof
US11/135,278 US7635857B2 (en) 1999-12-21 2005-05-24 Transistor having soluble layers
JP2013098405A JP5658789B2 (en) 1999-12-21 2013-05-08 Solution-treated device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB9930217.6A GB9930217D0 (en) 1999-12-21 1999-12-21 Solutiion processed transistors

Publications (1)

Publication Number Publication Date
GB0009911D0 true GB0009911D0 (en) 2000-06-07

Family

ID=10866760

Family Applications (5)

Application Number Title Priority Date Filing Date
GBGB9930217.6A Ceased GB9930217D0 (en) 1999-12-21 1999-12-21 Solutiion processed transistors
GBGB0009913.5A Ceased GB0009913D0 (en) 1999-12-21 2000-04-20 Integrated circuits
GBGB0009915.0A Ceased GB0009915D0 (en) 1999-12-21 2000-04-20 Solution processing
GBGB0009911.9A Ceased GB0009911D0 (en) 1999-12-21 2000-04-20 Solution processed devices
GBGB0009917.6A Ceased GB0009917D0 (en) 1999-12-21 2000-04-20 Forming interconnects

Family Applications Before (3)

Application Number Title Priority Date Filing Date
GBGB9930217.6A Ceased GB9930217D0 (en) 1999-12-21 1999-12-21 Solutiion processed transistors
GBGB0009913.5A Ceased GB0009913D0 (en) 1999-12-21 2000-04-20 Integrated circuits
GBGB0009915.0A Ceased GB0009915D0 (en) 1999-12-21 2000-04-20 Solution processing

Family Applications After (1)

Application Number Title Priority Date Filing Date
GBGB0009917.6A Ceased GB0009917D0 (en) 1999-12-21 2000-04-20 Forming interconnects

Country Status (6)

Country Link
JP (2) JP5014547B2 (en)
KR (3) KR100909481B1 (en)
BR (3) BRPI0016660B1 (en)
CA (1) CA2829416C (en)
GB (5) GB9930217D0 (en)
HK (3) HK1053012B (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4629997B2 (en) * 2003-06-02 2011-02-09 株式会社リコー Thin film transistor and thin film transistor array
JP4906934B2 (en) * 2003-06-02 2012-03-28 株式会社リコー Electronic element, electronic element array, and display device
WO2005041286A1 (en) 2003-10-28 2005-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming wiring, method for manufacturing thin film transistor and droplet discharging method
JP4666999B2 (en) * 2003-10-28 2011-04-06 株式会社半導体エネルギー研究所 Wiring and thin film transistor manufacturing method
JP4713192B2 (en) * 2004-03-25 2011-06-29 株式会社半導体エネルギー研究所 Method for manufacturing thin film transistor
JP4665545B2 (en) * 2005-02-24 2011-04-06 凸版印刷株式会社 Thin film transistor manufacturing method
JP2006261535A (en) * 2005-03-18 2006-09-28 Ricoh Co Ltd Lamination structure, electronic element using the same, electronic element array using electronic element, manufacturing method of lamination structure, and manufacturing method of electronic element
JP4556838B2 (en) * 2005-05-13 2010-10-06 セイコーエプソン株式会社 Bank forming method and film pattern forming method
KR100696555B1 (en) * 2006-02-28 2007-03-19 삼성에스디아이 주식회사 A method for preparing an organic thin film transistor, the organic thin film transistor prepared using the method and a flat panel display comprising the organic thin film transistor
KR100792407B1 (en) * 2006-10-10 2008-01-08 고려대학교 산학협력단 A top gate thin film transistor using nano particle and a method for manufacturing thereof
JP4096985B2 (en) 2006-07-14 2008-06-04 セイコーエプソン株式会社 Semiconductor device manufacturing method, semiconductor device, and electro-optical device
JP4415977B2 (en) 2006-07-14 2010-02-17 セイコーエプソン株式会社 Semiconductor device manufacturing method and transfer substrate
KR100777741B1 (en) * 2006-07-19 2007-11-19 삼성에스디아이 주식회사 A method for preparing an organic thin film transistor and a flat panel display comprising the organic thin film transistor prepared by the method
KR100792036B1 (en) * 2006-10-17 2008-01-04 한양대학교 산학협력단 Organic thin film transistor and manufacturing method thereof
KR101475097B1 (en) * 2007-04-25 2014-12-23 메르크 파텐트 게엠베하 Process for preparing an electronic device
JP2009105258A (en) * 2007-10-24 2009-05-14 Konica Minolta Holdings Inc Method for manufacturing of thin-film transistor, thin-film transistor and display unit
KR101678670B1 (en) * 2010-01-22 2016-12-07 삼성전자주식회사 Method of manufacturing TFT and array TFT
JP2011216647A (en) 2010-03-31 2011-10-27 Dainippon Printing Co Ltd Method for manufacturing pattern-formed body, method for manufacturing functional element, and method for manufacturing semiconductor element
JP5866783B2 (en) * 2011-03-25 2016-02-17 セイコーエプソン株式会社 Circuit board manufacturing method
JP6531319B2 (en) * 2016-05-16 2019-06-19 株式会社Ｎｓｃ Display device manufacturing method
JP6804082B2 (en) * 2016-09-21 2020-12-23 国立研究開発法人物質・材料研究機構 Organic transistor and its operation control method and operation control device
CN106953029B (en) * 2017-03-22 2019-08-02 京东方科技集团股份有限公司 A kind of film encapsulation method and packaging film, ink jet printing device
JP7030352B2 (en) * 2020-10-13 2022-03-07 国立研究開発法人物質・材料研究機構 Organic transistor and operation control device for organic transistor

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
FR2664430B1 (en) * 1990-07-04 1992-09-18 Centre Nat Rech Scient THIN FILM FIELD EFFECT TRANSISTOR WITH MIS STRUCTURE, IN WHICH THE INSULATION AND THE SEMICONDUCTOR ARE MADE OF ORGANIC MATERIALS.
JP2507153B2 (en) 1990-07-31 1996-06-12 松下電器産業株式会社 Organic device and manufacturing method thereof
JP3941169B2 (en) * 1997-07-16 2007-07-04 セイコーエプソン株式会社 Manufacturing method of organic EL element
WO1999010939A2 (en) * 1997-08-22 1999-03-04 Koninklijke Philips Electronics N.V. A method of manufacturing a field-effect transistor substantially consisting of organic materials
EP1027723B1 (en) * 1997-10-14 2009-06-17 Patterning Technologies Limited Method of forming an electric capacitor
WO1999021233A1 (en) 1997-10-17 1999-04-29 The Regents Of The University Of California Process for fabricating organic semiconductor devices using ink-jet printing technology and device and system employing same
CN100550472C (en) * 1998-03-17 2009-10-14 精工爱普生株式会社 The substrate of patterning thin film and surface treatment thereof
GB9808061D0 (en) * 1998-04-16 1998-06-17 Cambridge Display Tech Ltd Polymer devices
JP5167569B2 (en) * 1999-06-21 2013-03-21 ケンブリッジ・エンタープライズ・リミテッド Method for manufacturing transistor

Also Published As

Publication number Publication date
KR100872154B1 (en) 2008-12-08
GB0009913D0 (en) 2000-06-07
KR20020086870A (en) 2002-11-20
HK1053012B (en) 2010-01-15
CA2829416A1 (en) 2001-06-28
KR20020089313A (en) 2002-11-29
GB9930217D0 (en) 2000-02-09
BRPI0016660B1 (en) 2018-09-25
BRPI0016643B1 (en) 2018-04-03
GB0009915D0 (en) 2000-06-07
HK1053013A1 (en) 2003-10-03
CA2829416C (en) 2018-04-10
BRPI0016670B1 (en) 2018-09-11
JP2003518756A (en) 2003-06-10
JP5014547B2 (en) 2012-08-29
HK1053012A1 (en) 2003-10-03
JP5658789B2 (en) 2015-01-28
KR100909481B1 (en) 2009-07-28
KR20020088065A (en) 2002-11-25
JP2013211565A (en) 2013-10-10
GB0009917D0 (en) 2000-06-07
HK1053013B (en) 2008-11-28
KR100927890B1 (en) 2009-11-23
HK1053011B (en) 2008-11-28
HK1053011A1 (en) 2003-10-03

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)