EP2659521A4 - A method and apparatus for forming a thin lamina - Google Patents

A method and apparatus for forming a thin lamina

Info

Publication number
EP2659521A4
EP2659521A4 EP11854117.6A EP11854117A EP2659521A4 EP 2659521 A4 EP2659521 A4 EP 2659521A4 EP 11854117 A EP11854117 A EP 11854117A EP 2659521 A4 EP2659521 A4 EP 2659521A4
Authority
EP
European Patent Office
Prior art keywords
forming
thin lamina
lamina
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11854117.6A
Other languages
German (de)
French (fr)
Other versions
EP2659521A2 (en
Inventor
Adam Kell
Robert Clark-Phelps
Joseph D Gillespie
Gopal Prabhu
Takao Sakase
Theodore H Smick
Steve Zuniga
Steve Bababyan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GTAT Corp
Original Assignee
GTAT Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/980,424 external-priority patent/US8173452B1/en
Application filed by GTAT Corp filed Critical GTAT Corp
Publication of EP2659521A2 publication Critical patent/EP2659521A2/en
Publication of EP2659521A4 publication Critical patent/EP2659521A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
EP11854117.6A 2010-12-29 2011-12-20 A method and apparatus for forming a thin lamina Withdrawn EP2659521A4 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US12/980,424 US8173452B1 (en) 2010-12-29 2010-12-29 Method to form a device by constructing a support element on a thin semiconductor lamina
US201161510476P 2011-07-21 2011-07-21
US201161510477P 2011-07-21 2011-07-21
US201161510478P 2011-07-21 2011-07-21
US201161510475P 2011-07-21 2011-07-21
PCT/US2011/066195 WO2012092026A2 (en) 2010-12-29 2011-12-20 A method and apparatus for forming a thin lamina

Publications (2)

Publication Number Publication Date
EP2659521A2 EP2659521A2 (en) 2013-11-06
EP2659521A4 true EP2659521A4 (en) 2015-05-13

Family

ID=46383810

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11854117.6A Withdrawn EP2659521A4 (en) 2010-12-29 2011-12-20 A method and apparatus for forming a thin lamina

Country Status (6)

Country Link
EP (1) EP2659521A4 (en)
JP (1) JP2014506008A (en)
KR (1) KR20140004120A (en)
CN (1) CN103370800A (en)
TW (1) TWI552205B (en)
WO (1) WO2012092026A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2920668B1 (en) * 2012-11-14 2021-11-03 GTAT Corporation A mobile electronic device comprising an ultrathin sapphire cover plate
WO2015040907A1 (en) 2013-09-17 2015-03-26 株式会社村田製作所 Method for manufacturing vertical-cavity surface-emitting laser
CN103646990A (en) * 2013-11-28 2014-03-19 青岛蓝图文化传播有限公司市南分公司 Cleavage method
KR102437397B1 (en) * 2014-11-19 2022-08-30 코닝 인코포레이티드 Apparatus and method of peeling a multi-layer substrate
JP6687829B2 (en) * 2015-08-17 2020-04-28 シンフォニアテクノロジー株式会社 Induction heating device
TWI632982B (en) * 2017-07-03 2018-08-21 陽程科技股份有限公司 Plate retaining device
CN111244015B (en) * 2020-01-20 2023-07-21 杭州立昂东芯微电子有限公司 Wafer bonding-releasing auxiliary carrier disc, bonding-releasing machine and bonding-releasing method
TWI749783B (en) * 2020-09-24 2021-12-11 鴻績工業股份有限公司 Air chamber suction module

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030216008A1 (en) * 2002-05-02 2003-11-20 Walter Schwarzenbach Process for dataching layers of material
US20070277874A1 (en) * 2006-05-31 2007-12-06 David Francis Dawson-Elli Thin film photovoltaic structure
EP2117053A2 (en) * 2008-05-07 2009-11-11 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US20100159630A1 (en) * 2008-12-18 2010-06-24 Twin Creeks Technologies, Inc. Method for making a photovoltaic cell comprising contact regions doped through a lamina

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JPH07176482A (en) * 1991-05-31 1995-07-14 At & T Corp Method and apparatus for epitaxial growth
JPH08254392A (en) * 1995-03-17 1996-10-01 Fujitsu Ltd Method and apparatus for heat treatment of substrate
JPH10223496A (en) * 1997-02-12 1998-08-21 Ion Kogaku Kenkyusho:Kk Single-crystal wafer and manufacture thereof
JP2000077287A (en) * 1998-08-26 2000-03-14 Nissin Electric Co Ltd Manufacture of crystal thin-film substrate
JP4452789B2 (en) * 1999-09-01 2010-04-21 独立行政法人 日本原子力研究開発機構 Method for producing silicon crystal thin plate and method for producing substrate for photoelectric conversion element
CN100579333C (en) * 2003-01-23 2010-01-06 东丽株式会社 The manufacture method of member for circuit board, circuit substrate and the manufacturing installation of circuit substrate
TW200607023A (en) * 2004-08-04 2006-02-16 Tien-Hsi Lee A method to fabricate a thin film on a substrate
CN101467245A (en) * 2006-05-31 2009-06-24 康宁股份有限公司 Thin film photovoltaic structure and fabrication
JP2008062476A (en) * 2006-09-06 2008-03-21 Disco Abrasive Syst Ltd Machining apparatus and chuck table
JP5065748B2 (en) * 2007-04-27 2012-11-07 信越化学工業株式会社 Manufacturing method of bonded wafer
JP2008294080A (en) * 2007-05-22 2008-12-04 Sanyo Electric Co Ltd Solar cell and manufacturing method of same
JP5248994B2 (en) * 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 Method for manufacturing photoelectric conversion device
US8481845B2 (en) * 2008-02-05 2013-07-09 Gtat Corporation Method to form a photovoltaic cell comprising a thin lamina
JP2009283582A (en) * 2008-05-21 2009-12-03 Shin Etsu Handotai Co Ltd Bonded wafer manufacturing method and bonded wafer
KR101311652B1 (en) * 2009-02-06 2013-09-25 아사히 가라스 가부시키가이샤 Method for manufacturing electronic device and separation apparatus used therefor
JP2010244864A (en) * 2009-04-07 2010-10-28 Shin-Etsu Chemical Co Ltd Substrate heating structural body

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030216008A1 (en) * 2002-05-02 2003-11-20 Walter Schwarzenbach Process for dataching layers of material
US20070277874A1 (en) * 2006-05-31 2007-12-06 David Francis Dawson-Elli Thin film photovoltaic structure
EP2117053A2 (en) * 2008-05-07 2009-11-11 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US20100159630A1 (en) * 2008-12-18 2010-06-24 Twin Creeks Technologies, Inc. Method for making a photovoltaic cell comprising contact regions doped through a lamina

Also Published As

Publication number Publication date
CN103370800A (en) 2013-10-23
JP2014506008A (en) 2014-03-06
TW201246301A (en) 2012-11-16
WO2012092026A3 (en) 2012-10-11
EP2659521A2 (en) 2013-11-06
WO2012092026A2 (en) 2012-07-05
KR20140004120A (en) 2014-01-10
TWI552205B (en) 2016-10-01

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DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20150414

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 21/265 20060101ALI20150408BHEP

Ipc: H01L 31/0224 20060101ALI20150408BHEP

Ipc: H01L 21/67 20060101ALI20150408BHEP

Ipc: H01L 21/683 20060101ALI20150408BHEP

Ipc: H01L 31/056 20140101ALI20150408BHEP

Ipc: H01L 31/18 20060101AFI20150408BHEP

Ipc: H01L 21/762 20060101ALI20150408BHEP

Ipc: H01L 31/042 20140101ALI20150408BHEP

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