CN103646990A - Cleavage method - Google Patents
Cleavage method Download PDFInfo
- Publication number
- CN103646990A CN103646990A CN201310611600.7A CN201310611600A CN103646990A CN 103646990 A CN103646990 A CN 103646990A CN 201310611600 A CN201310611600 A CN 201310611600A CN 103646990 A CN103646990 A CN 103646990A
- Authority
- CN
- China
- Prior art keywords
- sample
- cleavage
- suction
- certain
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003776 cleavage reaction Methods 0.000 title claims abstract description 35
- 230000007017 scission Effects 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 15
- 230000000694 effects Effects 0.000 claims abstract description 4
- 239000013078 crystal Substances 0.000 claims abstract description 3
- 238000007373 indentation Methods 0.000 claims description 2
- 238000004080 punching Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 238000001179 sorption measurement Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- OANVFVBYPNXRLD-UHFFFAOYSA-M propyromazine bromide Chemical compound [Br-].C12=CC=CC=C2SC2=CC=CC=C2N1C(=O)C(C)[N+]1(C)CCCC1 OANVFVBYPNXRLD-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a cleavage method. According to the cleavage method of the invention, a pneumatic suction force is adopted to make a chip cleaved naturally along an crystal orientation; in order to realize the suction force, a sample supporting piece of a conventional cleavage machine platform is replaced by a device with a pneumatic function; the sample supporting piece is designed into an elongated block; the interior of the elongated block is hollowed so as to form a closed chamber; a hole is formed in a side surface of the chamber through slotting, and a vacuum tube extends out from the hole; an upper surface is composed of two surfaces; a left surface is parallel to a lower surface; an angle formed between a right surface and the lower surface is smaller than eight degrees; a hole is formed in the upper surface through slotting and is used for sucking a sample; and slotting is not performed on an area with a certain width which is reserved at a region on an upper left surface, wherein the region on the upper left surface is adjacent to a common edge of an upper right surface, and the area with a certain width is adopted as a sample stage with a certain flatness in scribing. The cleavage method comprises the following steps that: the sample is provided; a gap with a certain length is cut at the front end of a cleavage slot through using a scribing command; a vacuum device is started and tightly sucks areas at the left side and right side of the sample cleavage slot, namely, suction forces with a certain strength are applied to the sample, such that the sample is cleaved along the gap under the effects of the two suction forces and one supporting force, and as a result, a naturally-cleaved end surface can be formed.
Description
Technical field
The present invention relates to a kind of method of cleavage, especially relate to a kind of cleavage method of the semi-conducting materials such as GaAs, InP.
Background technology
Along with scientific and technological development and progress, much more more and more semi-conducting material is applied in photoelectric device, materials such as GaAs, InP, in using the technique of these materials manufacture photoelectric devices, the materials such as GaAs, InP need to be carried out to cleavage, the cleavage technique of the materials such as current existing GaAs, InP, generally adopts after diamant incised notch mouth and rolls and exerted pressure to split with roller.But the mode of this cleavage is for the not withstand voltage device of some surface textures, have mechanical damage largely, the direct contact chip of roller is surperficial simultaneously, and the chip that sliver produces easily sticks on roller, can bring the possibility of the contamination sample surfaces such as chip to a certain degree for this reason.Therefore, find a kind of cleavage method of above defect of can avoiding and become at present exigence the most.
Summary of the invention
The invention provides a kind of cleavage method, adopt pneumatic suction to force chip naturally cleaved along crystal orientation, for realizing suction, the sample supporter of conventional cleavage board is changed into and has pneumatic device, sample support designs becomes one rectangular, inside hollows out into a sealing chamber, the punching of chamber side connects vacuum tube, upper surface is comprised of two faces, left surface is parallel with lower surface, right surface and lower surface angle are less than 8 °, on upper surface, punch, for adsorption sample, the region of surface, close upper right, surface, upper left common edge reserves certain width region and does not punch, the sample stage that has certain evenness during for scribing, when cleavage sample, first with scribing order, at sample cleavage front of the slot, cut out the breach of certain length, enable again vacuum plant and with suction, hold the region of sample cleavage groove the right and left, apply the suction of some strength to sample, sample is split along indentation, there under the effect of two suction and a support force, form naturally cleaved end face.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment are only not used in and limit the scope of the invention for the present invention is described.In addition should be understood that those skilled in the art can make various changes or modifications the present invention after having read the content of the present invention's instruction, these equivalent form of values fall within the application's appended claims limited range equally.
Cleavage method of the present invention and cleavage device, be applied to the cleavage technique of the fragile materials such as GaAs, InP, can realize the object of the contactless sliver of sample surfaces.The present invention is applicable to the cleavage of fragile material, for making the present invention more clear and easy to understand, below will with application the technology of the present invention preferred embodiment described in detail.
The sample that needs cleavage is fixed on to supporter top, rotating this sample aligns cleavage groove and cleavage aligning limit, diamond tool is cut the breach of a certain length at cleavage front of the slot, open chamber vacuum, produce the suction of chip back, make chip along cleavage groove season crack, realize chip front side surface non-contact type cleavage.
By using above cleavage method to make photoelectric device, its photoelectric properties are significantly improved, rate of finished products has also obtained significantly and promoted, prolongation in useful life, have played good effect.
Claims (1)
1. a cleavage method, adopt pneumatic suction to force chip naturally cleaved along crystal orientation, for realizing suction, the sample supporter of conventional cleavage board is changed into and has pneumatic device, sample support designs becomes one rectangular, inside hollows out into a sealing chamber, the punching of chamber side connects vacuum tube, upper surface is comprised of two faces, left surface is parallel with lower surface, right surface and lower surface angle are less than 8 °, on upper surface, punch, for adsorption sample, the region of surface, close upper right, surface, upper left common edge reserves certain width region and does not punch, the sample stage that has certain evenness during for scribing, when cleavage sample, first with scribing order, at sample cleavage front of the slot, cut out the breach of certain length, enable again vacuum plant and with suction, hold the region of sample cleavage groove the right and left, apply the suction of some strength to sample, sample is split along indentation, there under the effect of two suction and a support force, form naturally cleaved end face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310611600.7A CN103646990A (en) | 2013-11-28 | 2013-11-28 | Cleavage method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310611600.7A CN103646990A (en) | 2013-11-28 | 2013-11-28 | Cleavage method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103646990A true CN103646990A (en) | 2014-03-19 |
Family
ID=50252182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310611600.7A Pending CN103646990A (en) | 2013-11-28 | 2013-11-28 | Cleavage method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103646990A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1179770A (en) * | 1997-07-10 | 1999-03-23 | Yamaha Corp | Scribing device and cleavage method |
| CN101609794A (en) * | 2007-01-26 | 2009-12-23 | 硅源公司 | Temperature-controlled appliance and method during the thick-film material cleavage is handled |
| CN101661973A (en) * | 2008-08-25 | 2010-03-03 | 硅源公司 | Race track configuration and method for wafering silicon solar substrates |
| US20100055874A1 (en) * | 2008-08-28 | 2010-03-04 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled propagation |
| CN102856187A (en) * | 2012-08-16 | 2013-01-02 | 常州天合光能有限公司 | Manual splitting device of solar battery sheet |
| CN103296578A (en) * | 2013-06-04 | 2013-09-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Splitting device |
| CN103370800A (en) * | 2010-12-29 | 2013-10-23 | Gtat公司 | A method and apparatus for forming a thin lamina |
-
2013
- 2013-11-28 CN CN201310611600.7A patent/CN103646990A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1179770A (en) * | 1997-07-10 | 1999-03-23 | Yamaha Corp | Scribing device and cleavage method |
| CN101609794A (en) * | 2007-01-26 | 2009-12-23 | 硅源公司 | Temperature-controlled appliance and method during the thick-film material cleavage is handled |
| CN101661973A (en) * | 2008-08-25 | 2010-03-03 | 硅源公司 | Race track configuration and method for wafering silicon solar substrates |
| US20100055874A1 (en) * | 2008-08-28 | 2010-03-04 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled propagation |
| CN103370800A (en) * | 2010-12-29 | 2013-10-23 | Gtat公司 | A method and apparatus for forming a thin lamina |
| CN102856187A (en) * | 2012-08-16 | 2013-01-02 | 常州天合光能有限公司 | Manual splitting device of solar battery sheet |
| CN103296578A (en) * | 2013-06-04 | 2013-09-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Splitting device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104513005B (en) | Rose method | |
| TWI648231B (en) | Fragmentation method of brittle material substrate | |
| US9908806B2 (en) | Sheet glass, method for manufacturing sheet glass, and device for manufacturing sheet glass | |
| TWI542556B (en) | A glass substrate cutting apparatus, a glass substrate cutting method, and a glass substrate manufacturing method | |
| JP6364789B2 (en) | Scribing equipment | |
| SG170665A1 (en) | Method for grinding a semiconductor wafer | |
| CN103920915B (en) | A kind of thin skin Grinder and apply the method that this device carries out milling | |
| CN103296578B (en) | A kind of cleavage device | |
| TWI666182B (en) | Breaking method and processing device for brittle material substrate | |
| CN106182152B (en) | The dividing method and segmenting device of composite substrate | |
| CN104249412A (en) | Brittle material base board parting tool and brittle material base board supporting fixture | |
| KR20170004841A (en) | Substrate cutting apparatus and substrate cutting method | |
| WO2016084614A1 (en) | Method for severing brittle substrate | |
| CN103646990A (en) | Cleavage method | |
| CN105529259A (en) | Cleavage method of semiconductor material | |
| CN103730415A (en) | Cleavage device | |
| TWI613057B (en) | Substrate breaking device | |
| CN105729640B (en) | Scribing method and scribing apparatus | |
| CN104511973A (en) | Method and apparatus for breaking brittle material substrate | |
| CN106904819A (en) | A kind of glass-cutting forming method | |
| JP2014217983A (en) | Break device and break method | |
| JP2011207638A (en) | Severing apparatus | |
| JP2018051945A (en) | Diamond tool and its scribing method | |
| CN104362089A (en) | Cleavage method | |
| TWI625314B (en) | Scribing tool, manufacturing method of scribing tool, and forming method of scribing tool |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140319 |