DE69631451D1 - Monolithic high frequency integrated circuit and method of manufacture - Google Patents

Monolithic high frequency integrated circuit and method of manufacture

Info

Publication number
DE69631451D1
DE69631451D1 DE69631451T DE69631451T DE69631451D1 DE 69631451 D1 DE69631451 D1 DE 69631451D1 DE 69631451 T DE69631451 T DE 69631451T DE 69631451 T DE69631451 T DE 69631451T DE 69631451 D1 DE69631451 D1 DE 69631451D1
Authority
DE
Germany
Prior art keywords
manufacture
integrated circuit
high frequency
frequency integrated
monolithic high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69631451T
Other languages
German (de)
Other versions
DE69631451T2 (en
Inventor
Julio C Costa
Wayne R Burger
Natalino Camilleri
Christopher P Dragon
Daniel J Lamey
David K Lovelace
David Q Ngo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of DE69631451D1 publication Critical patent/DE69631451D1/en
Publication of DE69631451T2 publication Critical patent/DE69631451T2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69631451T 1995-05-01 1996-04-29 Monolithic high frequency integrated circuit and method of manufacture Expired - Lifetime DE69631451T2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US431948 1995-05-01
US08/431,948 US5578860A (en) 1995-05-01 1995-05-01 Monolithic high frequency integrated circuit structure having a grounded source configuration

Publications (2)

Publication Number Publication Date
DE69631451D1 true DE69631451D1 (en) 2004-03-11
DE69631451T2 DE69631451T2 (en) 2004-12-02

Family

ID=23714111

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69631451T Expired - Lifetime DE69631451T2 (en) 1995-05-01 1996-04-29 Monolithic high frequency integrated circuit and method of manufacture

Country Status (5)

Country Link
US (1) US5578860A (en)
EP (1) EP0741413B1 (en)
JP (2) JP3709508B2 (en)
CN (1) CN1126174C (en)
DE (1) DE69631451T2 (en)

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US6075271A (en) * 1998-03-03 2000-06-13 Motorola, Inc. Semiconductor device inhibiting parasitic effects during electrostatic discharge
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US6506648B1 (en) * 1998-09-02 2003-01-14 Cree Microwave, Inc. Method of fabricating a high power RF field effect transistor with reduced hot electron injection and resulting structure
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US6725430B2 (en) * 2001-11-05 2004-04-20 Qualcomm Incorporated Process for designing high frequency circuits in multiple domains
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US6646505B2 (en) * 2002-03-26 2003-11-11 Motorola, Inc. Power amplifier array with same type predistortion amplifier
US6486017B1 (en) * 2002-06-04 2002-11-26 Chartered Semiconductor Manufacturing Ltd. Method of reducing substrate coupling for chip inductors by creation of dielectric islands by selective EPI deposition
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US7049669B2 (en) * 2003-09-15 2006-05-23 Infineon Technologies Ag LDMOS transistor
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US20060074164A1 (en) * 2003-12-19 2006-04-06 Tpl, Inc. Structured composite dielectrics
US20060074166A1 (en) * 2003-12-19 2006-04-06 Tpl, Inc. Title And Interest In An Application Moldable high dielectric constant nano-composites
US20080128961A1 (en) * 2003-12-19 2008-06-05 Tpl, Inc. Moldable high dielectric constant nano-composites
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US8384189B2 (en) 2005-03-29 2013-02-26 Megica Corporation High performance system-on-chip using post passivation process
US7875933B2 (en) * 2005-03-29 2011-01-25 Infineon Technologies Ag Lateral bipolar transistor with additional ESD implant
US7830211B2 (en) * 2005-07-29 2010-11-09 Broadcom Corporation Input inductive network for sample and hold amplifiers in high speed data converters
US7435625B2 (en) * 2005-10-24 2008-10-14 Freescale Semiconductor, Inc. Semiconductor device with reduced package cross-talk and loss
US20070090545A1 (en) * 2005-10-24 2007-04-26 Condie Brian W Semiconductor device with improved encapsulation
US7432133B2 (en) * 2005-10-24 2008-10-07 Freescale Semiconductor, Inc. Plastic packaged device with die interface layer
US7368668B2 (en) * 2006-02-03 2008-05-06 Freescale Semiconductor Inc. Ground shields for semiconductors
US7592673B2 (en) * 2006-03-31 2009-09-22 Freescale Semiconductor, Inc. ESD protection circuit with isolated diode element and method thereof
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US7915706B1 (en) * 2007-07-09 2011-03-29 Rf Micro Devices, Inc. Linearity improvements of semiconductor substrate using passivation
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Also Published As

Publication number Publication date
CN1140900A (en) 1997-01-22
EP0741413B1 (en) 2004-02-04
JPH08306874A (en) 1996-11-22
JP2003188272A (en) 2003-07-04
DE69631451T2 (en) 2004-12-02
CN1126174C (en) 2003-10-29
EP0741413A2 (en) 1996-11-06
US5578860A (en) 1996-11-26
JP3709508B2 (en) 2005-10-26
EP0741413A3 (en) 1998-12-23

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8327 Change in the person/name/address of the patent owner

Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US