DE69225632T2 - Optoelektronische Schaltervorrichtung - Google Patents
Optoelektronische SchaltervorrichtungInfo
- Publication number
- DE69225632T2 DE69225632T2 DE69225632T DE69225632T DE69225632T2 DE 69225632 T2 DE69225632 T2 DE 69225632T2 DE 69225632 T DE69225632 T DE 69225632T DE 69225632 T DE69225632 T DE 69225632T DE 69225632 T2 DE69225632 T2 DE 69225632T2
- Authority
- DE
- Germany
- Prior art keywords
- switch device
- optoelectronic switch
- optoelectronic
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005693 optoelectronics Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
- H01L33/0016—Devices characterised by their operation having p-n or hi-lo junctions having at least two p-n junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18302—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] comprising an integrated optical modulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3475491A JP2710171B2 (ja) | 1991-02-28 | 1991-02-28 | 面入出力光電融合素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69225632D1 DE69225632D1 (de) | 1998-07-02 |
DE69225632T2 true DE69225632T2 (de) | 1999-02-25 |
Family
ID=12423110
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69225632T Expired - Fee Related DE69225632T2 (de) | 1991-02-28 | 1992-02-13 | Optoelektronische Schaltervorrichtung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5340998A (de) |
EP (1) | EP0501246B1 (de) |
JP (1) | JP2710171B2 (de) |
CA (1) | CA2061349C (de) |
DE (1) | DE69225632T2 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5729566A (en) * | 1996-06-07 | 1998-03-17 | Picolight Incorporated | Light emitting device having an electrical contact through a layer containing oxidized material |
JP2000056281A (ja) * | 1998-08-07 | 2000-02-25 | Mitsubishi Electric Corp | 光変調器とその製造方法 |
JP2001189526A (ja) * | 2000-01-05 | 2001-07-10 | Nippon Sheet Glass Co Ltd | 自己走査型面発光レーザアレイ |
US6674785B2 (en) | 2000-09-21 | 2004-01-06 | Ricoh Company, Ltd. | Vertical-cavity, surface-emission type laser diode and fabrication process thereof |
US6479844B2 (en) * | 2001-03-02 | 2002-11-12 | University Of Connecticut | Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit |
JP3760235B2 (ja) * | 2003-04-04 | 2006-03-29 | 独立行政法人 宇宙航空研究開発機構 | 半導体レーザ及び半導体レーザの発振方法 |
US7772615B2 (en) * | 2007-08-10 | 2010-08-10 | Connector Optics | Anti stark electrooptic medium and electrooptically modulated optoelectronic device based thereupon |
JP4595012B2 (ja) * | 2008-03-26 | 2010-12-08 | 株式会社沖データ | 半導体発光装置、光プリントヘッド、および画像形成装置 |
JP5665504B2 (ja) * | 2010-11-24 | 2015-02-04 | キヤノン株式会社 | 垂直共振器型面発光レーザおよび垂直共振器型面発光レーザアレイ |
JP2012204677A (ja) * | 2011-03-25 | 2012-10-22 | Fuji Xerox Co Ltd | 発光サイリスタ、光源ヘッド、及び画像形成装置 |
JP7216270B2 (ja) * | 2018-09-28 | 2023-02-01 | 日亜化学工業株式会社 | 半導体発光素子 |
CN113381297B (zh) * | 2020-03-09 | 2022-07-01 | 济南晶正电子科技有限公司 | 一种集成光学复合基板 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2273371B1 (de) * | 1974-05-28 | 1978-03-31 | Thomson Csf | |
FR2396419A1 (fr) * | 1977-06-27 | 1979-01-26 | Thomson Csf | Diode capable de fonctionner en emetteur et detecteur de lumiere de la meme longueur d'onde alternativement |
US4216485A (en) * | 1978-09-15 | 1980-08-05 | Westinghouse Electric Corp. | Optical transistor structure |
US4450567A (en) * | 1979-07-12 | 1984-05-22 | Xerox Corporation | Optical repeater integrated lasers |
JPH0738457B2 (ja) * | 1986-07-18 | 1995-04-26 | 株式会社東芝 | 光・電子双安定素子 |
JPS6373688A (ja) * | 1986-09-17 | 1988-04-04 | Mitsubishi Electric Corp | 半導体発光装置 |
JPS63200131A (ja) * | 1987-02-17 | 1988-08-18 | Nec Corp | 光論理素子 |
JPS6414963A (en) * | 1987-07-08 | 1989-01-19 | Nec Corp | Pnpn semiconductor element |
JPS6488518A (en) * | 1987-09-30 | 1989-04-03 | Hitachi Ltd | Semiconductor device for controlling beam of light |
US5038356A (en) * | 1989-12-04 | 1991-08-06 | Trw Inc. | Vertical-cavity surface-emitting diode laser |
JP2898347B2 (ja) * | 1990-04-23 | 1999-05-31 | イーストマン・コダックジャパン株式会社 | 発光ダイオードアレイ |
US5068868A (en) * | 1990-05-21 | 1991-11-26 | At&T Bell Laboratories | Vertical cavity surface emitting lasers with electrically conducting mirrors |
US5063569A (en) * | 1990-12-19 | 1991-11-05 | At&T Bell Laboratories | Vertical-cavity surface-emitting laser with non-epitaxial multilayered dielectric reflectors located on both surfaces |
-
1991
- 1991-02-28 JP JP3475491A patent/JP2710171B2/ja not_active Expired - Fee Related
-
1992
- 1992-02-13 DE DE69225632T patent/DE69225632T2/de not_active Expired - Fee Related
- 1992-02-13 EP EP92102438A patent/EP0501246B1/de not_active Expired - Lifetime
- 1992-02-17 CA CA002061349A patent/CA2061349C/en not_active Expired - Fee Related
- 1992-02-28 US US07/843,212 patent/US5340998A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0501246B1 (de) | 1998-05-27 |
EP0501246A2 (de) | 1992-09-02 |
US5340998A (en) | 1994-08-23 |
DE69225632D1 (de) | 1998-07-02 |
EP0501246A3 (en) | 1993-01-20 |
JP2710171B2 (ja) | 1998-02-10 |
CA2061349A1 (en) | 1992-08-29 |
JPH07240506A (ja) | 1995-09-12 |
CA2061349C (en) | 1996-11-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |