JPS6414963A - Pnpn semiconductor element - Google Patents

Pnpn semiconductor element

Info

Publication number
JPS6414963A
JPS6414963A JP17152687A JP17152687A JPS6414963A JP S6414963 A JPS6414963 A JP S6414963A JP 17152687 A JP17152687 A JP 17152687A JP 17152687 A JP17152687 A JP 17152687A JP S6414963 A JPS6414963 A JP S6414963A
Authority
JP
Japan
Prior art keywords
type
diffusion
layer
gate
electrons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17152687A
Other languages
Japanese (ja)
Inventor
Kenichi Kasahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP17152687A priority Critical patent/JPS6414963A/en
Priority to US07/175,429 priority patent/US5021694A/en
Publication of JPS6414963A publication Critical patent/JPS6414963A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electronic Switches (AREA)
  • Led Devices (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To eliminate excessive holes quickly together with electrons and to make it possible to conduct a high speed turn-OFF by a method wherein p-type and n-type gate electrodes, which are connected to p-type and n-type gate regions respectively, are formed. CONSTITUTION:After selective etching has been conducted in such a manner that an n-GaAs layer 23 is cut as deep as 0.2mum or thereabout, the front of diffusion is made to reach a p<+>-GaAs layer 22 by conducting a diffusing process at 600 deg.C for 200 minutes using a CVD-SiO film as a mask and ZnAs2 as the source of diffusion. A p-type diffusion layer is formed, and a p-type gate electrode 30 is formed using AuGe-Ni on the opposite side. A gate switch 13 is closed when resetting. Also, the polarity of a power source 12 is used by reversing the setting porality. When voltage is applied, the carrier accumulated on the gate layer is brought in the state wherein the carrier is forcedly pulled out to outside together with electrons and holes, and a high speed turn-OFF can be made possible.
JP17152687A 1987-03-30 1987-07-08 Pnpn semiconductor element Pending JPS6414963A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP17152687A JPS6414963A (en) 1987-07-08 1987-07-08 Pnpn semiconductor element
US07/175,429 US5021694A (en) 1987-03-30 1988-03-30 Circuit for driving a gated p-n-p-n device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17152687A JPS6414963A (en) 1987-07-08 1987-07-08 Pnpn semiconductor element

Publications (1)

Publication Number Publication Date
JPS6414963A true JPS6414963A (en) 1989-01-19

Family

ID=15924754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17152687A Pending JPS6414963A (en) 1987-03-30 1987-07-08 Pnpn semiconductor element

Country Status (1)

Country Link
JP (1) JPS6414963A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5340998A (en) * 1991-02-28 1994-08-23 Nec Corporation Semiconductor surface light emitting and receiving heterojunction device
JPH0726305A (en) * 1993-07-12 1995-01-27 Komazawa Kinzoku Kogyo Kk Method for producing globular grain of active metal and device therefor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515748A (en) * 1974-07-03 1976-01-17 Hitachi Ltd
JPS5275278A (en) * 1975-12-19 1977-06-24 Meidensha Electric Mfg Co Ltd Semiconductor device
JPS61159775A (en) * 1985-01-04 1986-07-19 Oki Electric Ind Co Ltd Manufacture of semiconductor optical element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515748A (en) * 1974-07-03 1976-01-17 Hitachi Ltd
JPS5275278A (en) * 1975-12-19 1977-06-24 Meidensha Electric Mfg Co Ltd Semiconductor device
JPS61159775A (en) * 1985-01-04 1986-07-19 Oki Electric Ind Co Ltd Manufacture of semiconductor optical element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5340998A (en) * 1991-02-28 1994-08-23 Nec Corporation Semiconductor surface light emitting and receiving heterojunction device
JPH0726305A (en) * 1993-07-12 1995-01-27 Komazawa Kinzoku Kogyo Kk Method for producing globular grain of active metal and device therefor

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