JPS6414963A - Pnpn semiconductor element - Google Patents
Pnpn semiconductor elementInfo
- Publication number
- JPS6414963A JPS6414963A JP17152687A JP17152687A JPS6414963A JP S6414963 A JPS6414963 A JP S6414963A JP 17152687 A JP17152687 A JP 17152687A JP 17152687 A JP17152687 A JP 17152687A JP S6414963 A JPS6414963 A JP S6414963A
- Authority
- JP
- Japan
- Prior art keywords
- type
- diffusion
- layer
- gate
- electrons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electronic Switches (AREA)
- Led Devices (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To eliminate excessive holes quickly together with electrons and to make it possible to conduct a high speed turn-OFF by a method wherein p-type and n-type gate electrodes, which are connected to p-type and n-type gate regions respectively, are formed. CONSTITUTION:After selective etching has been conducted in such a manner that an n-GaAs layer 23 is cut as deep as 0.2mum or thereabout, the front of diffusion is made to reach a p<+>-GaAs layer 22 by conducting a diffusing process at 600 deg.C for 200 minutes using a CVD-SiO film as a mask and ZnAs2 as the source of diffusion. A p-type diffusion layer is formed, and a p-type gate electrode 30 is formed using AuGe-Ni on the opposite side. A gate switch 13 is closed when resetting. Also, the polarity of a power source 12 is used by reversing the setting porality. When voltage is applied, the carrier accumulated on the gate layer is brought in the state wherein the carrier is forcedly pulled out to outside together with electrons and holes, and a high speed turn-OFF can be made possible.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17152687A JPS6414963A (en) | 1987-07-08 | 1987-07-08 | Pnpn semiconductor element |
US07/175,429 US5021694A (en) | 1987-03-30 | 1988-03-30 | Circuit for driving a gated p-n-p-n device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17152687A JPS6414963A (en) | 1987-07-08 | 1987-07-08 | Pnpn semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6414963A true JPS6414963A (en) | 1989-01-19 |
Family
ID=15924754
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17152687A Pending JPS6414963A (en) | 1987-03-30 | 1987-07-08 | Pnpn semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6414963A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5340998A (en) * | 1991-02-28 | 1994-08-23 | Nec Corporation | Semiconductor surface light emitting and receiving heterojunction device |
JPH0726305A (en) * | 1993-07-12 | 1995-01-27 | Komazawa Kinzoku Kogyo Kk | Method for producing globular grain of active metal and device therefor |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS515748A (en) * | 1974-07-03 | 1976-01-17 | Hitachi Ltd | |
JPS5275278A (en) * | 1975-12-19 | 1977-06-24 | Meidensha Electric Mfg Co Ltd | Semiconductor device |
JPS61159775A (en) * | 1985-01-04 | 1986-07-19 | Oki Electric Ind Co Ltd | Manufacture of semiconductor optical element |
-
1987
- 1987-07-08 JP JP17152687A patent/JPS6414963A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS515748A (en) * | 1974-07-03 | 1976-01-17 | Hitachi Ltd | |
JPS5275278A (en) * | 1975-12-19 | 1977-06-24 | Meidensha Electric Mfg Co Ltd | Semiconductor device |
JPS61159775A (en) * | 1985-01-04 | 1986-07-19 | Oki Electric Ind Co Ltd | Manufacture of semiconductor optical element |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5340998A (en) * | 1991-02-28 | 1994-08-23 | Nec Corporation | Semiconductor surface light emitting and receiving heterojunction device |
JPH0726305A (en) * | 1993-07-12 | 1995-01-27 | Komazawa Kinzoku Kogyo Kk | Method for producing globular grain of active metal and device therefor |
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