DE102014213967A1 - Apparatus for the Hydophilization of Dental Implants - Google Patents

Abstract

The invention relates to a device (1) for the hydrophilization of dental implants (Z) comprising • a high-frequency source (HF), • a dielectric support body (SK) for at least partially receiving a dental implant (Z), wherein the dielectric support body (SK) at least one Winding of an electrically conductive material (L1) on a side facing away from the dental implant (Z) of the dielectric support body (SK), wherein in operation the high frequency source (HF) is in electrical contact with the at least one turn (L1) to form a dielectric to cause hindered plasma discharge (P) on the inside of the dielectric support body, so that the resulting cold plasma hydrophilizes the surface of a dental implant (Z) introduced into the plasma area of action. Furthermore, the invention relates to a use of a device (1) for generating a dielectrically impeded plasma discharge for the hydrophilization of implants for the human or animal body, in particular for the hydophilization of dental implants made of titanium.

Description

background

In many fields of technology there is a need to process surfaces for specific applications or processing steps on their surface.

Particularly in medicine, there is a need for surfaces of e.g. Before implantation in the body, treat implants so that they become hydrophilic or even germ-free, so that ingrowth takes place quickly and safely

For this purpose, great efforts have been made in the past, e.g. should lead to the desired success by means of suitable coatings.

However, the challenges are enormous, as the biocompatibility of such implants must be preserved. This requires a high degree of care in the production, which can thus lead to a huge increase in costs.

Furthermore, with implants, the number of germs or the absence of germs is of great importance.

Therefore, a great deal of effort had to be made in the past to make implants as germ-free as possible, or to process them after production in such a way that ingrowth takes place quickly and safely.

It should be noted, for example, that on the way from production to use in the body may be found many intermediate stations, which may lead to contamination with germs. Therefore, either an enormous effort in the packaging must be operated so that the implants arrive germ-free or the implants must be made germ-free on site. However, this is not always and everywhere in the same quality cost possible.

It would therefore be desirable to provide a device that inexpensively provides for machining the surface of implants such that implant ingrowth is rapid and secure, and the surface of the implants has better biocompatibility.

Brief description of the invention

The object is achieved by a device for the hydrophilization of dental implants. The device has a high-frequency source and a dielectric support body for at least partially receiving a dental implant, wherein the dielectric support body has at least one turn of an electrically conductive material on a side remote from the dental implant of the dielectric support body, wherein in operation, the high-frequency source with the at least one turn in electrical contact is made to cause a dielectric barrier plasma discharge on the inside of the dielectric support body, so that the resulting cold plasma hydrophilizes the surface of a implant inserted into the plasma area of action dental implant.

This can provide a simple inexpensive and simple device that can be used in any (dental) doctor's office. Thus, the cost of a costly germ-free transport can be saved and also a sterility is made possible at the place of use. Furthermore, the surface of the implants can be processed so that they allow a rapid and safe ingrowth in which the hydrophobic surface is frequently hyrdophiliert and thus allow better attachment of water and / or blood and / or cells and / or proteins. As a result, an improved, because faster osteointegration of the implants can be achieved.

In an advantageous embodiment of the invention, the high-frequency source to a Teslagenerator.

According to one development of the invention, the dielectric support body SK has a material selected from the group comprising plastics, ceramics or glass.

In yet another embodiment of the invention, the space of the dielectric plasma discharge substantially room atmosphere.

According to a further embodiment of the invention, the dielectric support body has at least one further turn of an electrically conductive material on a side facing away from the dental implant of the dielectric support body, wherein in operation, the high frequency source is in electrical contact with the at least one further turn.

In yet another embodiment of the invention, the dental implant has an electrical potential such that the dielectric impeded plasma discharge terminates on the dental implant.

In an alternative embodiment, the dielectrically impeded plasma discharge is effected between the first turn and the further turn.

According to one embodiment of the invention, the support body is removable and autoclavable.

In a further embodiment of the invention, the dental implant can be displaced relative to the support body or relative to the first turn, wherein the intensity of the dielectrically impeded plasma discharge is changed depending on the position of the dental implant relative to the support body.

In accordance with yet another embodiment of the invention, the device also has a time control.

In yet another embodiment, the device further comprises a power supply unit.

Furthermore, the object is achieved by the use of a device for generating a dielectrically impeded plasma discharge for the hydrophilization of implants for the human or animal body, in particular for the hydophilization of dental implants made of titanium.

Other objects, advantages, features and applications of the present invention will become apparent from the following description of exemplary embodiments with reference to the drawings. All described and / or illustrated features alone or in any meaningful combination form the subject matter of the present invention, also independent of their summary in the claims or their dependency.

Brief description of the figures

Hereinafter, the invention will be described in more detail with reference to the figures. In these shows:

1 a first schematic representation of embodiments of the invention,

2 a further schematic representation of further embodiments of the invention,

3 a further schematic representation of other further embodiments of the invention, and

4 Yet another schematic representation of other further embodiments of the invention.

Detailed description

As far as the same or similar reference numerals are used below in the description and in the reference to the figures, the description is to be understood in this case for all figures, unless explicitly described otherwise.

Furthermore, as far as the singular is specified below, so it is, as far as technically not necessarily otherwise or unless a single element is explicitly required, always includes the plural.

It is further noted that any subsequent aspect may be used in all embodiments, unless the description presents them as an alternative. That Aspects of an embodiment described below can also be used in other embodiments without the need for an explicit description.

In the 1 to 4 are different embodiments of a device according to the invention 1 shown.

The device is suitable for the hydrophilization of implants of any kind. However, only the use in relation to dental implants Z, in particular those made of titanium, will be described below, but the device is 1 as well as your use is not limited to dental implants Z, but can be used for any form of implant use. This means that other implants such as joints, screws, washers or nails can be processed in a corresponding manner.

In this case, the device 1 in all embodiments, a high-frequency source HF and a dielectric support body SK for at least partially receiving a dental implant Z, wherein the dielectric support body SK at least one turn of an electrically conductive material L ₁ on a tooth implant Z side facing away from the dielectric support body SK, wherein in operation the high-frequency source HF is in electrical contact with the at least one turn L ₁ to cause a dielectric impeded plasma discharge P on the inside of the dielectric support body, so that the resulting cold plasma hydrophilizes the surface of a dental implant Z inserted into the plasma circulating area.

Insofar as subsequently electrically conductive materials are described for one or more windings, so are in particular copper or silver-containing materials. Furthermore, can the respective electrically conductive material also be embedded in the support body SK, or be pushed onto the support body. As a result, for example, a better handling or protection against manipulation of the device can be provided. Furthermore, the respective electrical connections shown schematically in the figures can easily be made detachable.

Cold plasma is generated in a so-called silent electrical discharge, also known in the English language as a dielectric barrier discharge. In this case, a space between insulating coated electrodes can be ionized or reaches a plasma state when an alternating voltage at the electrodes in the room through the insulation generates a sufficient field strength. By displacement currents, the discharge is maintained through the insulation and it can be continuously transmitted electrical power into the plasma. The field strength is inversely proportional to the dielectric constant and therefore always higher in the gas than in the dielectric.

The high frequency source may be any form of high frequency source, i. Both semiconductor-based high-frequency sources, tube-based high-frequency sources or Teslageneratoren can be used as an example.

The use of a Tesla generator allows a particularly simple embodiment of the high-frequency source. Tieslageneratoren allow a favorable for the creation of cold plasma pulsed operation, since in pulsed operation, a continuous cold plasma can be obtained. In this case, the winding of an electrically conductive material L _{1 is connected} to the secondary winding of a Tesla coil, in which a damped high-frequency high-voltage oscillation is generated. An exemplary (damped) high-voltage oscillation has, for example, a frequency of a few 10 kHz, in particular 40-50 kHz, at about 1000 pulses per second.

Depending on the frequency used, it may be prescribed that the device 1 is to be designed so that there is no unauthorized emission of electromagnetic waves. On the other hand, if, for example, the high frequency is in one of the so-called ISM bands (Industrial, Scientific and Medical Band), interference from other institutions can be accepted.

In principle, any dielectric material can be selected for the dielectric support body SK. However, it should have the mechanical stability to be able to support the winding of the electrically conductive material L ₁ . Plastics, ceramics or glass have proven to be particularly advantageous. In particular, plastics and glass allow visual control of the implants during the process of hydrophilization to be observed for reasons of transparency, for example, to detect malfunctions early on. In addition, the dielectric constants are adjustable over a wide range, by the choice of the appropriate materials. In particular, however, the use of glass is particularly preferred, since this is particularly stable compared to the emissions resulting from a plasma discharge.

It should be noted that the interior of the support body SK, which receives the implant Z, ie the space of the dielectric plasma discharge P, can remain substantially in the room atmosphere. That is, although the internal space may have a different atmospheric pressure and / or atmospheric composition than the room air, this is not required for the operation of the invention. In this respect, here are no further cost-driving facilities for the device 1 whereby the total cost of acquisition as well as the continuous operation can be kept low.

In relation to 1 are now different variants of the device can be displayed.

For example, it is possible to provide only a single turn L ₁ (shown with a dashed line), so that only this one turn is used to generate a cold plasma P.

Then, the implant Z, which has a certain electrical conductivity, is connected to the earth or ground potential. If high frequency is now applied to produce a cold plasma, then the desired cold plasma is formed between the surface of the support body SK and the implant Z, and the surface of the implant Z is rendered hydrophilic and germ-free.

If only one turn or a few turns L ₁ are used, it is possible that the cold plasma can not completely hydrophilize the desired surface. Then, for example, a displacement device can be provided, which move the implant Z and the one or the few turns L ₁ relative to each other, as indicated by the arrow.

The implant Z may e.g. used in a suitable holder and be electrically contacted as necessary.

For example, the support body SK can be open at the top as shown. Then, the implant can be inserted into a holder and, for example be held by spring force. The retainer may also provide electrical contacting to a predetermined potential if desired.

On the other hand, several turns L ₁ can be provided - according to the solid compound in 1 or the 2 ,

For example, To better control the effect of the cold plasma, it may be necessary to be able to control individual sections of the implant differently.

This can e.g. be achieved in that individual sections have a different winding density, or the individual section are controlled in chronological order or that the respective residence time of a portion of the implant Z in the cold plasma P is controlled by a displacement device.

Of course, mixed forms of the aforementioned measures can also be used.

For example, in the upper area of the figures, the winding density could be lower, since the implant Z has a smaller distance from the support body SK, while in the lower area of the figures the winding density can be higher, since here the implant Z has a greater distance from the support body SK. Then, for example, be treated with a single pass the entire located in the plasma region P portion of the implant Z, wherein the plasma is adapted to the respective distance. That the high-frequency source HF could work with the same power.

In another example, e.g. If only a single or a few turns L1 are provided, then in the process of the implant Z, the radio-frequency source HF and / or the displacement device would be triggered in such a way that the plasma P leads to the corresponding effect, i. that either the strength of the plasma or the residence time of each section is controlled so that the desired effect occurs consistently.

For example, the implant Z is displaced relative to the support body SK, wherein the intensity of the dielectrically impeded plasma discharge is changed depending on the position of the dental implant Z relative to the support body SK or the first turn L ₁ .

In yet a further example, however, a plurality of windings L ₁ L _{2, which} can each be controlled independently of one another, can also be correspondingly used 1 to be available. For example, in one step, the lower region is hydrophilized in accordance with the dashed line, while in a further step, only an upper region corresponding to the dot-dashed lines is activated. It can also be provided that, for example, one area is activated less long than another area.

It should be noted that depending on the configuration of the device 1 it can come to an immediate cold plasma effect P, if, for example, the plasma as in 1 . 2 and 4 shown on the implant Z ends. That is, the implant Z has a corresponding electrical (ground or ground) potential, so that the dielectric barrier plasma discharge ends on the implant Z.

However, the device can also be designed so that two or more turns L ₁ and L ₂ as in 3 are shown connected to the high-frequency source HF, so that the cold plasma P substantially only the implant Z brushes, ie the plasma does not end on the implant Z. In this case, it is also not necessary that the implant Z is grounded, but it is also possible that the implant is also non-conductive, for example, ceramic. That is, the dielectrically impeded plasma discharge is effected between the first turn L ₁ and the other turn L ₂ .

It goes without saying that in these two cases mentioned above, in turn, a displacement device can be provided.

The in the 3 and 4 shown embodiment, depending on the wiring of the high voltage source with respect to the first and second Windunge (n) L ₁ and L ₂ and the implant Z provide both a grazing plasma and a plasma directly ending on the implant and is thus particularly universal used.

Of particular advantage is that the support body SK of the device 1 removable and autoclavable. As a result, even the strictest hygiene requirements as well as approval requirements can be fulfilled without significantly higher costs.

Both the control of the time residence time, the strength of the plasma discharge, the selection of corresponding first and second windings L ₁ and L ₂ can be provided by a suitable controller, in particular a timer uC. This time control may include, for example, a relatively simply designed timing control or a complicated control, which performs a specific control, for example, based on the respective implant Z. Furthermore, it can also be provided that feedback is provided via the measuring devices (not shown) via the course of the hydrophilization of the implant Z for the further activation or for the production of corresponding protocols. In this respect, the uC control can also be microprocessor-based.

Of particular advantage is that the device 1 may further comprise a power supply unit EVE. Since the energy required for the hydrophilization of a small implant, in particular a dental implant is comparatively low, for example, a suitable (rechargeable) battery can be used. Thus, even in countries with an insufficient or unstable energy supply situation, the devices of the invention 1 for use, ie for generating a dielectrically impeded plasma discharge for the hydrophilization of implants for the human or animal body, in particular for the hydophilization of dental implants made of titanium.

Due to the embodiments according to the invention, even with irregularly shaped implants Z, a substantially uniform hydrophilization can be achieved. In particular, when substantially more uniform, implants Z, such as e.g. Dental implants, allows the almost constant distance between the dielectric support body SK and the implant Z a uniform hydrophilization, in which case a simple time control or control of the displacement device is essentially sufficient. It should be noted that dental implants have substantially no cylindrical shape but a rather frustoconical shape.

Without further ado, the device according to the invention 1 be substantially united in a housing, but it is advantageous if the holder and / or the support body are designed to be removable, for example, to be able to autoclave these components.

As far as a potential connection for the implant Z is provided above, this can be done at any point. However, a substantially central contact with respect to the support body SK is particularly advantageous. That a contact can be made from above (not shown) or below.

Furthermore, it is possible to rotate the implant Z relative to the support body SK or relative to the at least one turn of the electrically conductive material L ₁ . This is shown in the figures by a left- or right-handed arrow below the implant Z. For this purpose, for example, the implant Z can be rotatably mounted in a holder. By means of rotation of the implant Z relative to the at least one turn of the electrically conductive material L _{1, it} can be achieved that (possible) inhomogeneities in the plasma effect range are compensated and thus the result of the hydrophosphing becomes more uniform.

By means of the presented invention it is now also possible to subsequently process inexpensive and possibly not germ-free and / or germ-free transported implants, while at the same time achieving the desired sterility by means of the hydrophobization. Thus, it no longer requires an expensive transport in germ-free packaging. Also, only no monitoring of the packaging and / or the storage times of germ-free packaging longer necessary. This results in significant cost advantages.

LIST OF REFERENCE NUMBERS

1

 Device for hydrophilization

Z

 (Tooth) implant

HF

RF source

SK

dielectric support body

L ₁ , L ₂

 (a) turn of an electrically conductive material

P

 dielectrically impeded plasma discharge

EVE

Power supply unit

Claims (13)

Contraption ( 1 ) for the hydrophilization of dental implants (Z), comprising • a high-frequency source (HF), • a dielectric support body (SK) for at least partially receiving a dental implant (Z), wherein the dielectric support body (SK) at least one turn of an electrically conductive material (L ₁ ) on a side facing away from the dental implant (Z) of the dielectric support body (SK), wherein in operation the high frequency source (HF) is in electrical contact with the at least one turn (L ₁ ) to form a dielectric impeded plasma discharge (P) to effect on the inside of the dielectric support body, so that the resulting cold plasma hydrophilizes the surface of a dental implant (Z) introduced into the plasma area of action. Contraption ( 1 ) according to claim 1, characterized in that the high-frequency source (HF) has a Teslagenerator. Contraption ( 1 ) according to claim 1 or 2, characterized in that the dielectric support body (SK) is a material selected from the Group having plastics, ceramics or glass. Contraption ( 1 ) according to one of the preceding claims, characterized in that the space of the dielectric plasma discharge has substantially room atmosphere. Contraption ( 1 ) according to one of the preceding claims, characterized in that the dielectric support body (SK) has at least one further turn (L ₂ ) of an electrically conductive material on a side facing away from the dental implant of the dielectric support body, wherein in operation the high frequency source (HF) with the at least one further turn is in electrical contact. Contraption ( 1 ) according to one of the preceding claims, characterized in that the dental implant has an electrical potential, so that the dielectric barrier plasma discharge ends on the dental implant (Z). Contraption ( 1 ) according to claim 5, characterized in that the dielectrically impeded plasma discharge between the first winding (L ₁ ) and the further winding (L ₂ ) is effected. Contraption ( 1 ) according to one of the preceding claims, characterized in that the supporting body (SK) is removable and autoclavable. Contraption ( 1 ) according to one of the preceding claims, characterized in that the dental implant (Z) relative to at least one turn (L ₁ ) can be moved, wherein depending on the position of the dental implant (Z) relative to the at least one turn (L ₁ ) Intensity of the dielectric barrier plasma discharge is changed. Contraption ( 1 ) according to one of the preceding claims, characterized in that the device further comprises a timer (uC). Contraption ( 1 ) according to one of the preceding claims, characterized in that the device further comprises a power supply unit (EVE). Device according to one of the preceding claims, characterized in that the dental implant (Z) is rotatably mounted to the support body (SK) and / or to at least one turn (L ₁ ). Use ( 1 ) a device ( 1 ) for generating a dielectrically impeded plasma discharge for the hydrophilization of implants for the human or animal body, in particular for the hydophilization of dental implants made of titanium.

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