DE102010048043A1 - Apparatus and method for processing wafers - Google Patents
Apparatus and method for processing wafers Download PDFInfo
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- DE102010048043A1 DE102010048043A1 DE102010048043A DE102010048043A DE102010048043A1 DE 102010048043 A1 DE102010048043 A1 DE 102010048043A1 DE 102010048043 A DE102010048043 A DE 102010048043A DE 102010048043 A DE102010048043 A DE 102010048043A DE 102010048043 A1 DE102010048043 A1 DE 102010048043A1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G47/00—Article or material-handling devices associated with conveyors; Methods employing such devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
Abstract
Die Erfindung betrifft eine Vorrichtung zur Prozessierung von Substraten, insbesondere Wafern (15), mit mindestens einem Vorbehandlungsmodul (9), mindestens einem Nachbehandlungsmodul (11) und mindestens einem Hauptbehandlungsmodul (10), wobei das Vorbehandlungsmodul (9) und das Nachbehandlungsmodul (11) als Schleuse für das Hauptbehandlungsmodul (10) schaltbar sind, sowie ein korrespondierendes Verfahren zur Prozessierung von Substraten, insbesondere Wafern.The invention relates to a device for processing substrates, in particular wafers (15), with at least one pretreatment module (9), at least one aftertreatment module (11) and at least one main treatment module (10), the pretreatment module (9) and the aftertreatment module (11) can be switched as a lock for the main treatment module (10), and a corresponding method for processing substrates, in particular wafers.
Description
Die Erfindung betrifft eine Vorrichtung zur Prozessierung von Substraten oder Substratpaaren, insbesondere Wafern als Waferpaaren, gemäß Patentanspruch 1 und ein korrespondierendes Verfahren gemäß Patentanspruch 8.The invention relates to a device for processing substrates or substrate pairs, in particular wafers as wafer pairs, according to
Prozessanlagen beziehungsweise -vorrichtungen der Halbleitertechnologie sind meist modular aufgebaut. Sie bestehen üblicherweise aus unterschiedlichen Kammern, in denen verschiedene Prozessschritte durchgeführt werden. So kommen beispielsweise zur Vorbehandlung von Wafern Prozessschritte wie Nassreinigung, Plasmabehandlung, Ätzen oder Heizen in Frage, während für die Hauptbehandlung eines Wafers Bonden, Belacken, Imprinten, Embossing und Belichtung in Frage kommen. Bei bekannten Prozessanlagen werden die Wafer oder Waferstapel mit Kassetten zwischen den Prozessanlagen oder Modulen von Prozessanlagen transportiert.Process systems or devices of semiconductor technology are usually modular. They usually consist of different chambers in which different process steps are performed. For example, process steps such as wet cleaning, plasma treatment, etching or heating are suitable for the pretreatment of wafers, while for the main treatment of a wafer, bonding, coating, imprints, embossing and exposure are possible. In known process plants, the wafers or wafer stacks are transported with cassettes between the process plants or modules of process plants.
Während des Transports kann es zur Kontamination, Beschädigung, Verunreinigung oder Oxidation und damit zur Beeinflussung weiterer Prozessschritte kommen.During transport, contamination, damage, contamination or oxidation can occur and thus influence further process steps.
Auch eine Kontamination der Hauptbehandlungskammer zwischen den Behandlungen aufeinanderfolgender Wafer, also beim Be- und Entladen der Wafer, ist problematisch.Contamination of the main treatment chamber between the treatments of successive wafers, that is to say when loading and unloading the wafers, is also problematic.
Weiterhin ist es in zeitlicher Hinsicht kritisch, dass bei der Hauptbehandlung große Druckdifferenzen von Atmosphärendruck bis hin zu sehr niedrigeren Drücken von 10–6 bar oder weniger überwunden werden müssen.Furthermore, it is critical in terms of time that in the main treatment large pressure differences from atmospheric pressure to very low pressures of 10 -6 bar or less must be overcome.
Aufgabe der vorliegenden Erfindung ist es daher, die Prozessierung von Substraten sowohl vom Ablauf her zu optimieren, als auch eine Kontamination, Beschädigung, Verunreinigung oder Oxidation möglichst zu vermeiden.The object of the present invention is therefore to optimize the processing of substrates from the point of view as well as to avoid contamination, damage, contamination or oxidation as far as possible.
Diese Aufgabe wird mit den Merkmalen der Patentansprüche 1 und 8 gelöst. Vorteilhafte Weiterbildungen der Erfindung sind in den Unteransprüchen angegeben. In den Rahmen der Erfindung fallen auch sämtliche Kombinationen aus zumindest zwei von in der Beschreibung, den Ansprüchen und/oder den Figuren angegebenen Merkmalen. Bei angegebenen Wertebereichen sollen auch innerhalb der genannten Grenzen liegende Werte als Grenzwerte offenbart und in beliebiger Kombination beanspruchbar sein.This object is achieved with the features of
Der Erfindung liegt der Gedanke zu Grunde, ein Hauptbehandlungsmodul mit mindestens einem Vorbehandlungsmodul und mindestens einem Nachbehandlungsmodul derart zu koppeln, dass mindestens eines der Vorbehandlungsmodule und mindestens eines der Nachbehandlungsmodule und/oder das Hauptbehandlungsmodul jeweils als vakuumdichte Schleusen für ein benachbartes Vorbehandlungs-, Hauptbehandlungs- oder Nachbehandlungsmodul wirken. Gleichzeitig ist es erfindungsgemäß in einer Ausführungsform der Erfindung vorgesehen, dass mindestens eines der Vorbehandlungsmodule und/oder das Hauptbehandlungsmodul und/oder mindestens eines der Nachbehandlungsmodule eigenständig beziehungsweise unabhängig von einem benachbarten Modul mit Druck, Vakuum insbesondere, beaufschlagbar und/oder temperierbar, insbesondere beheizbar, ist.The invention is based on the idea of coupling a main treatment module with at least one pretreatment module and at least one aftertreatment module in such a way that at least one of the pretreatment modules and at least one of the aftertreatment modules and / or the main treatment module are each in the form of vacuum-tight locks for an adjacent pretreatment, main treatment or After-treatment module act. At the same time it is provided according to the invention in one embodiment that at least one of the pretreatment modules and / or the main treatment module and / or at least one of the aftertreatment modules independently or independently of an adjacent module with pressure, vacuum in particular, acted upon and / or tempered, in particular heated, is.
Auf diese Weise wird trotz eines flexiblen Aufbaus der Prozessanlage gemäß der erfindungsgemäßen Vorrichtung eine zeitlich optimierte, sogar parallele, Prozessierung von mehreren Substraten innerhalb der erfindungsgemäßen Vorrichtung vorgesehen, bei der auf Grund der schleusenartigen Kupplung der einzelnen Prozessmodule eine Kontamination, Beschädigung, Verunreinigung oder Oxidation durch Entkopplung der Substrate von Außeneinflüssen, insbesondere beim Be- und Entladen der einzelnen Module, gelöst wird.In this way, despite a flexible structure of the process plant according to the device according to the invention, a temporally optimized, even parallel, processing of multiple substrates within the device according to the invention provided in the due to the lock-like coupling of the individual process modules contamination, damage, contamination or oxidation Decoupling of the substrates from external influences, in particular during loading and unloading of the individual modules, is solved.
Besonders vorteilhaft ist es, wenn das Hauptbehandlungsmodul ausschließlich über Schleusen be- und entladbar ist. Dies wird erfindungsgemäß gelöst, indem sowohl ein mit dem Hauptbehandlungsmodul schleusenartig gekoppeltes Vorbehandlungsmodul als auch ein mit dem Hauptbehandlungsmodul schleusenartig gekoppeltes Nachbehandlungsmodul vorgesehen ist. Durch diese Maßnahme findet die meist besonders kritische und unter oft extremen Bedingungen stattfindende Hauptbehandlung der Substrate beziehungsweise Wafer zu keinem Zeitpunkt der Prozessierung und auch nicht während des Be- und Entladens des Hauptbehandlungsmoduls mit Kontakt zur Umgebung statt. Das Hauptbehandlungsmodul ist demnach vollständig von der Umgebung entkoppelt, so dass eine Kontamination, Beschädigung, Verunreinigung oder Oxidation während der Hauptbehandlung der Substrate praktisch ausgeschlossen ist. Weiterhin besteht der Vorteil, dass die Hauptbehandlung vor- und nachbereitende Schritte in das Vorbehandlungs- und das Nachbehandlungsmodul ausgelagert werden können, insbesondere eine zumindest teilweise Druck- und/oder Temperaturbeaufschlagung. Im Hauptbehandlungsmodul ist in Folge dessen nur eine geringere Druck- und/oder Temperaturdifferenz zu überwinden als vom Umgebungs-/Atmosphärendruck pATM.It is particularly advantageous if the main treatment module can be loaded and unloaded exclusively via locks. This is achieved according to the invention by providing both a pre-treatment module coupled to the main treatment module in the manner of a lock and a post-treatment module coupled to the main treatment module in the manner of a lock. As a result of this measure, the main treatment of the substrates or wafers, which is usually particularly critical and takes place under often extreme conditions, does not take place at any time during the processing and also during the loading and unloading of the main treatment module with contact with the environment. Thus, the main treatment module is completely decoupled from the environment so that contamination, damage, contamination or oxidation during the main treatment of the substrates is virtually eliminated. Furthermore, there is the advantage that the main treatment pre- and post-processing steps can be outsourced to the pretreatment and the post-treatment module, in particular an at least partial pressure and / or temperature. As a result, only a lower pressure and / or temperature difference must be overcome in the main treatment module than the ambient / atmospheric pressure p ATM .
Gemäß einer vorteilhaften Ausführungsform der Erfindung ist vorgesehen, dass die Hauptbehandlungskammer beim Be- und Entladen der Substrate als Schleuse schaltbar ist. Somit kann beim Beladen der Hauptbehandlungskammer gleichzeitig eine Nachbehandlung des vorher in der Hauptbehandlungskammer bearbeiteten Substrats erfolgen. Beim Entladen der Hauptbehandlungskammer kann dagegen gleichzeitig eine Vorbehandlung des nächsten, in der Hauptbehandlungskammer zu bearbeitenden Substrats in der Vorbehandlungskammer erfolgen.According to an advantageous embodiment of the invention it is provided that the main treatment chamber during loading and unloading of the substrates is switchable as a lock. Thus, when loading the main treatment chamber at the same time an aftertreatment of the previously in the Main treatment chamber processed substrate. On the other hand, when the main treatment chamber is being unloaded, a pretreatment of the next substrate to be processed in the main treatment chamber in the pretreatment chamber can take place simultaneously.
In einer weiteren, vorteilhaften Ausführungsform ist vorgesehen, dass die Vorbehandlungskammer und/oder die Hauptbehandlungskammer und/oder die Nachbehandlungskammer, insbesondere separat, mittels einer Heizeinrichtung heizbar sind. Besonders vorteilhaft ist es dabei, wenn die Vorbehandlungskammer und/oder die Hauptbehandlungskammer und/oder die Nachbehandlungskammer vollständig wärmegedämmt sind. Auf diese Weise ist eine genaue Temperatursteuerung bei geringst möglichem Wärmeverlust möglich.In a further, advantageous embodiment it is provided that the pretreatment chamber and / or the main treatment chamber and / or the aftertreatment chamber, in particular separately, can be heated by means of a heating device. It is particularly advantageous if the pretreatment chamber and / or the main treatment chamber and / or the aftertreatment chamber are completely thermally insulated. In this way, a precise temperature control with the least possible heat loss is possible.
Soweit dem Vorbehandlungsmodul weitere, korrespondierend ausgebildete Vorbehandlungsmodule als Schleusen vorschaltbar sind und/oder dem Nachbehandlungsmodul weitere, korrespondierend ausgebildete Nachbehandlungsmodule als Schleusen nachschaltbar sind, kann der Verfahrensablauf weiter unterteilt werden, so dass sich eine Optimierung der Durchlaufzeiten im Prozessablauf ergibt. Dabei ist es erfindungsgemäß denkbar, dass mit einem Vorbehandlungsmodul gleichzeitig mehrere Vorbehandlungsmodule über Schleusentore direkt gekoppelt sind. Auf diese Weise können zeitintensive Vorbehandlungsschritte parallel und entsprechend zeitversetzt in den vorgeschalteten Vorbehandlungsmodulen ablaufen. Dies gilt analog für korrespondierende Nachbehandlungsmodule.As far as the pretreatment module further, correspondingly trained pretreatment modules are vorschaltbar as locks and / or the aftertreatment module further, correspondingly trained aftertreatment modules are connected downstream as locks, the process flow can be further subdivided, so that there is an optimization of throughput times in the process flow. In this case, it is conceivable according to the invention that a plurality of pretreatment modules are simultaneously directly coupled via sluice gates with a pretreatment module. In this way, time-consuming pretreatment steps can take place in parallel and correspondingly time-delayed in the upstream pretreatment modules. This applies analogously for corresponding aftertreatment modules.
Indem die Schleusen als Druck- und/oder Temperaturschleusen ausgebildet sind, ist es erfindungsgemäß möglich, den Druck und/oder die Temperatur durch entsprechende Schaltung der Vorbehandlungsmodule und/oder der Nachbehandlungsmodule zu steuern.By the locks are designed as pressure and / or temperature locks, it is possible according to the invention to control the pressure and / or the temperature by appropriate switching of the pretreatment modules and / or the aftertreatment modules.
Zum Be- und Entladen ist erfindungsgemäß eine Be- und Entladeeinrichtung, insbesondere mindestens ein Roboterarm, vorgesehen. Dieser wird zum Be- und Entladen der Substrate in die/aus der Hauptbehandlungskammer und/oder der Vorbehandlungskammer und/oder der Nachbehandlungskammer eingesetzt, wobei zur parallelen Handhabung mehrere, im Prozessablauf befindliche Substrate/Wafer erfindungsgemäß mehrere Roboterarme vorgesehen sein können. So kann beispielsweise in jeder Vorbehandlungskammer und/oder jeder Nachbehandlungskammer genau ein Roboterarm vorgesehen sein, der in die jeweils benachbarte Vorbehandlungs- oder Hauptbehandlungskammer zu Be- und Entladen der jeweils benachbarten Kammern eingreifen kann, wenn das jeweilige Schleusentor geöffnet ist.For loading and unloading according to the invention a loading and unloading, in particular at least one robot arm is provided. This is used for loading and unloading of the substrates in / from the main treatment chamber and / or the pre-treatment chamber and / or the aftertreatment chamber, wherein for parallel handling several, in the process flow substrates / wafer according to the invention may be provided more robot arms. Thus, for example, exactly one robot arm can be provided in each pretreatment chamber and / or each aftertreatment chamber, which can engage in the respectively adjacent pretreatment or main treatment chamber for loading and unloading the respectively adjacent chambers when the respective floodgate is open.
Gemäß einer besonders vorteilhaften Ausführungsform der Erfindung ist vorgesehen, dass die Hauptbehandlungskammer gleichzeitig von der Vorbehandlungskammer be- und in die Nachbehandlungskammer entladbar ist und/oder die Vorbehandlungskammer und die Nachbehandlungskammer gleichzeitig über das erste Schleusentor be- und über das zweite Schleusentor entladbar sind.According to a particularly advantageous embodiment of the invention, it is provided that the main treatment chamber can be simultaneously discharged from the pretreatment chamber and into the aftertreatment chamber and / or the pretreatment chamber and the aftertreatment chamber can be simultaneously discharged via the first lock gate and discharged via the second lock gate.
Weitere Vorteile, Merkmale und Einzelheiten der Erfindung ergeben sich aus der nachfolgenden Beschreibung bevorzugter Ausführungsbeispiele sowie anhand der Zeichnungen; diese zeigen in:Further advantages, features and details of the invention will become apparent from the following description of preferred embodiments and from the drawings; these show in:
In den Figuren sind gleiche Bezugszeichen für korrespondierende Bauteile vorgesehen.In the figures, the same reference numerals for corresponding components are provided.
In der in
Das Vorbehandlungsmodul
Zum Beladen des Vorbehandlungsmoduls
Das erste Schleusentor
Weiterhin weist die Vorbehandlungskammer
Durch Steuerung des ersten Schleusentors
Das Hauptbehandlungsmodul
Gegenüberliegend zum ersten Hauptschleusentor
Das Nachbehandlungsmodul
Über das zweite Schleusentor
Das Nachbehandlungsmodul
Das zweite Schleusentor
Die Ausführungsform gemäß
In einer weiteren Ausführungsform der Erfindung könnte in der Ausführungsform gemäß
Ein erfindungsgemäßer Verfahrensablauf, dessen Druck- und Temperaturverlauf in
Das erste Hauptschleusentor
The first
Über das geöffnete erste Schleusentor
Vor oder nach beziehungsweise während des Vorbehandlungsschritts kann der Vorbehandlungsraum
Vor dem Öffnen des ersten Hauptschleusentors
Durch ein internes Transportsystem, beispielsweise einen Roboterarm, wird der Wafer
Anschließend wird das erste Hauptschleusentor
Nach dem Schließen des ersten Hauptschleusentors
Nach der Hauptbehandlung des Wafers
Anschließend findet eine Nachbehandlung des Wafers
Nach Abschluss der Nachbehandlung des Wafers
Vor jedem Öffnen des Hauptschleusentors
Gemäß einer besonders vorteilhaften Ausführungsform der vorbeschriebenen Erfindung ist der Wafer
Die Hauptbehandlung erfolgt bei einem im Vergleich zur Vorbehandlung höheren Vakuum, also niedrigerem Druck pmin, wie es in
Die Nachbehandlung, die in
Die Vorbehandlung des Waferpaars kann gemäß einer Ausführungsform derart erfolgen, dass ein erstes Vorbehandlungsmodul für eine Vorbehandlung des ersten Wafers oder Waferpaares und ein zweites Vorbehandlungsmodul für eine Vorbehandlung des zweiten Wafers oder Waferpaars vorgesehen ist. Der erste und der zweite Wafer sind über separate Schleusentore in die Hauptbehandlungskammer ladbar.The pretreatment of the wafer pair can, according to one embodiment, take place such that a first pretreatment module for a pretreatment of the first wafer or wafer pair and a second pretreatment module for a pretreatment of the second wafer or wafer pair are provided. The first and second wafers can be loaded into the main treatment chamber via separate lock gates.
Die Kammern
Bei der in
Der Prozessfluss ist durch Pfeile in
Die Hauptschleusentore
BezugszeichenlisteLIST OF REFERENCE NUMBERS
- 1, 1'1, 1 '
- Vorrichtungcontraption
- 2, 2'2, 2 '
- Vorbehandlungskammerpretreatment chamber
- 3, 3'3, 3 '
- HauptbehandlungskammerMain treatment chamber
- 4, 4'4, 4 '
- Nachbehandlungskammertreatment chamber
- 55
- erstes Schleusentorfirst floodgate
- 66
- erstes Hauptschleusentorfirst main lock gate
- 77
- zweites Hauptschleusentorsecond main lock gate
- 88th
- zweites Schleusentorsecond lock gate
- 99
- Vorbehandlungsmodulpretreatment module
- 1010
- HauptbehandlungsmodulMain treatment module
- 1111
- Nachbehandlungsmodulpost-treatment module
- 1212
- Vorbehandlungsraumpre-treatment room
- 1313
- HauptbehandlungsraumMain treatment room
- 1414
- Nachbehandlungsraumpost-treatment room
- 1515
- Waferwafer
- 1616
- erster Roboterarmfirst robot arm
- 1717
- zweiter Roboterarmsecond robot arm
- 1818
- erste Stirnseitefirst end face
- 1919
- zweite Stirnseitesecond end face
Claims (9)
Priority Applications (15)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010048043A DE102010048043A1 (en) | 2010-10-15 | 2010-10-15 | Apparatus and method for processing wafers |
US13/878,570 US9751698B2 (en) | 2010-10-15 | 2011-10-05 | Device and method for processing wafers |
CN201180049666.0A CN103168350B (en) | 2010-10-15 | 2011-10-05 | Apparatus and method for handling chip |
EP13174234.8A EP2645410B1 (en) | 2010-10-15 | 2011-10-05 | Device for processing wafers |
CN201711338294.9A CN107978544A (en) | 2010-10-15 | 2011-10-05 | Apparatus and method for handling chip |
JP2013533151A JP2013542602A (en) | 2010-10-15 | 2011-10-05 | Devices and methods for processing wafers |
SG2013024666A SG189240A1 (en) | 2010-10-15 | 2011-10-05 | Device and method for processing of wafers |
PCT/EP2011/067405 WO2012049058A1 (en) | 2010-10-15 | 2011-10-05 | Device and method for processing wafers |
KR1020137010581A KR20130122628A (en) | 2010-10-15 | 2011-10-05 | Device and method for processing wafers |
KR1020187020824A KR101993106B1 (en) | 2010-10-15 | 2011-10-05 | Device and method for processing wafers |
CN201310387123.0A CN103531438A (en) | 2010-10-15 | 2011-10-05 | Device for processing substrate or substrate pair |
KR1020137019497A KR20130114218A (en) | 2010-10-15 | 2011-10-05 | Device and method for processing wafers |
EP11764566.3A EP2609619B1 (en) | 2010-10-15 | 2011-10-05 | Device and method for processing wafers |
US13/948,478 US9771223B2 (en) | 2010-10-15 | 2013-07-23 | Device and method for processing of wafers |
JP2013153406A JP5635162B2 (en) | 2010-10-15 | 2013-07-24 | Devices and methods for processing wafers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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DE102010048043A DE102010048043A1 (en) | 2010-10-15 | 2010-10-15 | Apparatus and method for processing wafers |
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DE102010048043A1 true DE102010048043A1 (en) | 2012-04-19 |
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DE102010048043A Ceased DE102010048043A1 (en) | 2010-10-15 | 2010-10-15 | Apparatus and method for processing wafers |
Country Status (8)
Country | Link |
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US (2) | US9751698B2 (en) |
EP (2) | EP2645410B1 (en) |
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CN108842143A (en) * | 2018-07-09 | 2018-11-20 | 上海新昇半导体科技有限公司 | Epitaxial furnace cooling system and cooling means |
CN109378287A (en) * | 2018-11-15 | 2019-02-22 | 中芯长电半导体(江阴)有限公司 | Semiconductor encapsulation device |
CN112501574B (en) * | 2020-10-27 | 2022-10-25 | 东兴华鸿光学科技有限公司 | Coating equipment for sunglass lens |
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Also Published As
Publication number | Publication date |
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JP2013542602A (en) | 2013-11-21 |
US9771223B2 (en) | 2017-09-26 |
SG189240A1 (en) | 2013-05-31 |
CN107978544A (en) | 2018-05-01 |
KR20130122628A (en) | 2013-11-07 |
US20130309046A1 (en) | 2013-11-21 |
US20130240113A1 (en) | 2013-09-19 |
CN103531438A (en) | 2014-01-22 |
EP2645410A1 (en) | 2013-10-02 |
CN103168350B (en) | 2018-02-13 |
KR20180085071A (en) | 2018-07-25 |
EP2609619B1 (en) | 2020-05-27 |
CN103168350A (en) | 2013-06-19 |
EP2645410B1 (en) | 2021-03-03 |
JP5635162B2 (en) | 2014-12-03 |
KR101993106B1 (en) | 2019-06-25 |
US9751698B2 (en) | 2017-09-05 |
JP2013225706A (en) | 2013-10-31 |
EP2609619A1 (en) | 2013-07-03 |
WO2012049058A1 (en) | 2012-04-19 |
KR20130114218A (en) | 2013-10-16 |
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