CN203279172U - MEMS (Micro-Electro-Mechanical System) microphone - Google Patents
MEMS (Micro-Electro-Mechanical System) microphone Download PDFInfo
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- CN203279172U CN203279172U CN 201320236653 CN201320236653U CN203279172U CN 203279172 U CN203279172 U CN 203279172U CN 201320236653 CN201320236653 CN 201320236653 CN 201320236653 U CN201320236653 U CN 201320236653U CN 203279172 U CN203279172 U CN 203279172U
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- back pole
- pole plate
- insulating barrier
- supporting layer
- vibrating diaphragm
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- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000004888 barrier function Effects 0.000 claims description 64
- 238000000034 method Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008520 organization Effects 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003534 oscillatory effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
The utility model provides an MEMS microphone which comprises a substrate, back pole plates, a diaphragm, insulating layers, supporting layers and electrodes. The back pole plates comprise a first back pole plate and a second back pole plate, the insulating layers comprise a first insulating layer, a second insulating layer and a third insulating layer, and the supporting layers comprise a first supporting layer and a second supporting layer. The first insulating layer is arranged between the substrate and the first back pole plate, and the second insulating layer is arranged over the first back pole plate; the first supporting layer is arranged between the second insulating layer and the diaphragm, and the second supporting layer is arranged between the diaphragm and the third insulating layer; the second back pole plate is arranged on the third insulating layer; and the electrodes which connect an internal circuit of the MEMS microphone with an external circuit are respectively arranged on the first and second back pole plates. The MEMS microphone provided by the utility model can solve problems of the microphone including low linearity, low harmonic distortion value and short circuit.
Description
Technical field
The utility model relates to MEMS microphone techniques field, more specifically, relates to and a kind ofly can reduce the linear distortion of MEMS microphone, reduces the MEMS microphone of total harmonic distortion value.
Background technology
Along with the progress of society and the development of technology, in recent years, the electronic product such as mobile phone, notebook computer volume constantly reduces, people are also more and more higher to the performance requirement of these portable electronic products, thereby require also with it that the volume of supporting electronic component constantly reduces, performance and consistency improve constantly.MEMS(Micro-Electro-Mechanical-System, abbreviation MEMS) the integrated MEMS microphone of technique begins to be applied in batches in the electronic products such as mobile phone, notebook computer, its encapsulation volume is less than traditional electret microphone, therefore is subject to most of microphone manufacturer's favor.
At present, microphone structure mostly is the design of single vibrating diaphragm merchandiser back pole plate combination, Fig. 1 for existing MEMS microphone diaphragm under, back pole plate is at upper structural representation; As shown in Figure 1, back pole plate 1 is provided with supporting layer 3 between back pole plate 1 and vibrating diaphragm 2 above vibrating diaphragm 2.Fig. 2 for existing MEMS microphone diaphragm upper, back pole plate under structural representation; As shown in Figure 2, vibrating diaphragm 2 is provided with supporting layer 3 between vibrating diaphragm 2 and back pole plate 1 above back pole plate 1.In existing microphone structure, be provided with supporting layer between single vibrating diaphragm and single back pole plate, the linearity characteristic of microphone is low, and the THD Value(Total Harmonic Distortion of MEMS microphone, is called again the total harmonic distortion value) larger.
The utility model content
In view of the above problems, the purpose of this utility model is to provide a kind of MEMS microphone, hangs down and the low problem of harmonic wave distortion value to solve microphone linearity degree.
The MEMS microphone that the utility model provides comprises substrate, back pole plate, vibrating diaphragm, insulating barrier, supporting layer and electrode; Back pole plate comprises the first back pole plate and the second back pole plate; Insulating barrier comprises the first insulating barrier, the second insulating barrier and the 3rd insulating barrier; Supporting layer comprises the first supporting layer and the second supporting layer; Wherein, the first insulating barrier is arranged between substrate and the first back pole plate, and the second insulating barrier is arranged on the top of the first back pole plate; The first supporting layer is arranged between the second insulating barrier and vibrating diaphragm, and the second supporting layer is arranged between vibrating diaphragm and the 3rd insulating barrier; The second back pole plate is arranged on above the 3rd insulating barrier; Be used for electrode that MEMS microphone internal circuit is communicated with external circuit respectively at the first back pole plate and the second back pole plate.
In addition, preferred structure is to be provided with a plurality of through holes on the first back pole plate and described the second back pole plate; Through hole on first back pole plate the second back pole plate respectively with the first insulating barrier and the second insulating barrier on through hole corresponding one by one.
In addition, preferred structure is, is arranged between vibrating diaphragm and the second insulating barrier and the 3rd insulating barrier between the first supporting layer and the second supporting layer and forms respectively the air gap that vibrating diaphragm shakes.
From top technical scheme as can be known, MEMS microphone of the present utility model, adopt the structure of two back pole plates, and vibrating diaphragm is arranged between the back pole plate of up and down, this project organization is by the mutual compensation between vibrating diaphragm and up and down back pole plate distance, can reduce the linear distortion of MEMS microphone, and reduce MEMS microphone total harmonic distortion value; Due to the increase of insulating barrier, can avoid vibrating diaphragm and back pole plate to be short-circuited, affect the realization of acoustic-electric conversion.
Description of drawings
By the content of reference below in conjunction with the description of the drawings and claims, and along with understanding more comprehensively of the present utility model, other purpose of the present utility model and result will be understood and easy to understand more.In the accompanying drawings:
Fig. 1 for existing MEMS microphone diaphragm under, back pole plate is at upper structural representation;
Fig. 2 for existing MEMS microphone diaphragm upper, back pole plate under structural representation;
Fig. 3 is the MEMS microphone structure schematic diagram according to the utility model embodiment.
Reference numeral wherein comprises: back pole plate 1, vibrating diaphragm 2, supporting layer 3, substrate 4, the first insulating barrier 5, the first back pole plate 6, the second insulating barrier 7, the first supporting layer 8, the second supporting layer 9, the 3rd insulating barrier 10, the second back pole plate 11, electrode 12, through hole 13 and air gap 14.
Label identical in institute's drawings attached is indicated similar or corresponding feature or function.
Embodiment
Below with reference to accompanying drawing, specific embodiment of the utility model is described in detail.
Fig. 3 is the MEMS microphone structure schematic diagram according to the utility model embodiment, as shown in Figure 3, the MEMS microphone that the utility model provides is followed successively by from the bottom up: substrate 4, the first insulating barrier 5, the first back pole plate 6, the second insulating barrier 7, the first supporting layer 8, vibrating diaphragm 2, the second supporting layer 9, the 3rd insulating barrier 10, the second back pole plate 11 and electrode 12.
Wherein, back pole plate comprises the first back pole plate 6 and the second back pole plate 11; Insulating barrier comprises the first insulating barrier 5, the second insulating barrier 7 and the 3rd insulating barrier 10; Supporting layer comprises the first supporting layer 8 and the second supporting layer 9.
The first insulating barrier 5 is arranged between substrate 4 and the first back pole plate 6, and the second insulating barrier 7 is arranged on the top of the first back pole plate 6.
The first supporting layer 8 is arranged between the second insulating barrier 7 and vibrating diaphragm 2, and the second supporting layer 9 is arranged between vibrating diaphragm 2 and the 3rd insulating barrier 10.
The 3rd insulating barrier 10 is arranged on the second back pole plate 11 belows; Electrode 12 is arranged on the first back pole plate 6 and the second back pole plate 11, is used for the first back pole plate 6 and is connected with external circuit with the second back pole plate 11.
Be provided with a plurality of through holes 13 on the first back pole plate 6 and the second back pole plate 11, and corresponding one by one with through hole (not marking in Fig. 3) on the second insulating barrier 7 and the 3rd insulating barrier 10.
Be arranged on the air gap 14 that forms respectively the vibrating diaphragm vibration between vibrating diaphragm 2 between the first supporting layer 8 and the second supporting layer 9 and the second insulating barrier 7 and the 3rd insulating barrier 10.
Wherein, the through hole at substrate 4 middle parts is in order to form the back of the body chamber of MEMS microphone chip, make voice signal can pass through this through hole, through hole 13 through back pole plate and insulating barrier, arrive air gap 14, act on to vibrating diaphragm 2, make vibrating diaphragm 2 produce vibration, thereby with the first back pole plate 6 and the second back pole plate 11 1 generation signal of telecommunication that works, realize sound-electric conversion.
Can find out, above-mentioned vibrating diaphragm is arranged on the MEMS microphone of the structure (i.e. the first back pole plate 6 and the second back pole plate 11) of the two back pole plates between the back pole plate of up and down, can by the mutual compensation of distance between vibrating diaphragm and up and down back pole plate distance, reduce the linear distortion of MEMS microphone.
In embodiment of the present utility model, the thin layer that electrode 12 is made for the gold element material, gold thin film is arranged between the first back pole plate 6 and the second back pole plate 11 by the method for evaporation, is connected with external circuit with the second back pole plate 11 in order to the first back pole plate 6.
In an embodiment of the present utility model, adopt the polyethylene oxide material to make supporting layer, be used for supporting vibrating diaphragm and two back pole plates.
Wherein, substrate 4 is made for polycrystalline silicon material, is provided with in the inside of substrate 4 through hole that sound enters, and this through hole can for square or circular, be determined according to the specific requirement of MEMS microphone products flexibly.
The first insulating barrier 5 by thermal oxidation, makes silicon and the oxidant generation silicon dioxide that reacts for substrate 4; Oxidant is by the adsorption of substrate 4, and diffusion in basad 4 generates new silicon dioxide in the contact interface reaction of silicon dioxide and silicon, and contact interface produces to the deep layer iterative method.
The first back pole plate 6 is arranged on the first insulating barrier 5 tops, the second insulating barrier 7 is arranged on above the first back pole plate, then, the method of polyethylene oxide by chemical deposition forms the first supporting layer 8, and polyethylene oxide simultaneously also deposition be filled in the through hole of the second insulating barrier 7 and the first back pole plate 6.
Then, deposition vibrating diaphragm 2 above supporting layer, and the vibrating diaphragm 2 of deposition is carried out etching, form two holes, a macropore and an aperture.
Then, deposition layer of polyethylene oxide supports 9 as second on vibrating diaphragm 2, simultaneously polyethylene oxide is also deposited in the macropore and aperture of two etchings formation that are filled on vibrating diaphragm 2.
Then, support on 9 second the 3rd insulating barrier 10 and the second back pole plate 11 are set, and at vibrating diaphragm 2 macropore place one ends, the second insulating barrier 7, the first supporting layer 8, the second supporting layer 9, the 3rd insulating barrier 10 and the second back pole plate 11 are carried out photoetching or etching, form a large hole and be connected with the first back pole plate 6.
Then, at the method depositing electrode 12 of the second back pole plate 11 use evaporations, the while also is deposited on the first back pole plate 6 that is connected with hole with the method for evaporation; The metallic element of electrode 12 is gold, in order to the second back pole plate 11 be connected back pole plate 6 and be connected with external circuit.
At last, etching is carried out in substrate 4 and the first insulating barrier 5, formed the through hole that voice signal passes through; Simultaneously also two supporting layers are carried out etching, form air gap 14 between vibrating diaphragm and two insulating barriers; Supporting layer is carried out the etched while, also vibrating diaphragm 2 two supporting layers corresponding to aperture place's end are being carried out etching, forming two holes that communicate, then corroding release, so just completing the making of the two back pole plate structures of MEMS microphone.
The embodiment of above-mentioned manufacture craft has described the technological process of production of the MEMS microphone of two back pole plate structures that the utility model provides more meticulously, vibrating diaphragm is set with the variable in distance defective between vibrating diaphragm and back pole plate in the MENS microphone that improves single back pole plate structure between two back pole plates, reduces the THD value of MEMS microphone.
In addition, (the first back pole plate 6 tops are provided with the second insulating barrier 7 to the insulating barrier that arranges between two back pole plates, the second back pole plate 11 belows are provided with the 3rd insulating barrier 10) can prevent that also the first back pole plate 6 and the second back pole plate 11 are short-circuited with vibrating diaphragm 2, avoid affecting the realization of acoustic-electric conversion.
In embodiment of the present utility model, voice signal can pass through through hole, through the through hole 13 of back pole plate and insulating barrier, arrive air gap 14, act on to vibrating diaphragm 2, make vibrating diaphragm 2 produce vibration, when vibrating diaphragm 2 produces violent oscillatory motion, can touch two back pole plates, the increase of two insulating barriers avoids back pole plate directly to be connected with vibrating diaphragm, and phenomenon can not be short-circuited, the generation signal of telecommunication thereby vibrating diaphragm 2 and the first back pole plate 6 and the second back pole plate 11 1 work is realized sound-electric conversion.
Can find out by above-mentioned execution mode, the MEMS microphone that the utility model provides, adopt the structure of two back pole plates, vibrating diaphragm is arranged between the back pole plate of up and down, this project organization has reduced the distance between vibrating diaphragm and up and down back pole plate, can reduce the linear distortion of MEMS microphone, and reduce MEMS microphone total harmonic distortion value; And due to the increase of insulating barrier, can avoid vibrating diaphragm and two back pole plates to be short-circuited, to guarantee the realization of acoustic-electric conversion.
As above described according to the MEMS microphone that the utility model proposes in the mode of example with reference to accompanying drawing.But, it will be appreciated by those skilled in the art that the MEMS microphone that proposes for above-mentioned the utility model, can also make various improvement on the basis that does not break away from the utility model content.Therefore, protection range of the present utility model should be determined by the content of appending claims.
Claims (3)
1. a MEMS microphone, comprise substrate, back pole plate, vibrating diaphragm, insulating barrier, supporting layer and electrode; It is characterized in that,
Described back pole plate comprises the first back pole plate and the second back pole plate; Described insulating barrier comprises the first insulating barrier, the second insulating barrier and the 3rd insulating barrier; Described supporting layer comprises the first supporting layer and the second supporting layer; Wherein,
Described the first insulating barrier is arranged between described substrate and described the first back pole plate, and described the second insulating barrier is arranged on the top of described the first back pole plate;
Described the first supporting layer is arranged between described the second insulating barrier and described vibrating diaphragm, and described the second supporting layer is arranged between described vibrating diaphragm and described the 3rd insulating barrier;
Described the second back pole plate is arranged on above described the 3rd insulating barrier;
Be used for described electrode that MEMS microphone internal circuit is communicated with external circuit respectively at described the first back pole plate and described the second back pole plate.
2. MEMS microphone as claimed in claim 1, is characterized in that,
Be provided with a plurality of through holes on described the first back pole plate and described the second back pole plate;
Through hole on described the first back pole plate and described the second back pole plate respectively with described the first insulating barrier and described the second insulating barrier on through hole corresponding one by one.
3. MEMS microphone as claimed in claim 1, is characterized in that, is arranged on the air gap that forms respectively described vibrating diaphragm vibration between described vibrating diaphragm between described the first supporting layer and described the second supporting layer and described the second insulating barrier and the 3rd insulating barrier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320236653 CN203279172U (en) | 2013-05-03 | 2013-05-03 | MEMS (Micro-Electro-Mechanical System) microphone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320236653 CN203279172U (en) | 2013-05-03 | 2013-05-03 | MEMS (Micro-Electro-Mechanical System) microphone |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203279172U true CN203279172U (en) | 2013-11-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320236653 Expired - Lifetime CN203279172U (en) | 2013-05-03 | 2013-05-03 | MEMS (Micro-Electro-Mechanical System) microphone |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104113810A (en) * | 2014-07-18 | 2014-10-22 | 瑞声声学科技(深圳)有限公司 | MEMS microphone and preparation method thereof and electronic device |
| CN107360526A (en) * | 2016-05-09 | 2017-11-17 | 上海微联传感科技有限公司 | Silicon microphone and its manufacture method |
| CN108600928A (en) * | 2018-04-20 | 2018-09-28 | 杭州士兰集成电路有限公司 | MEMS device and its manufacturing method |
| CN113949978A (en) * | 2020-07-17 | 2022-01-18 | 通用微(深圳)科技有限公司 | Sound collection device, sound processing device and method, device and storage medium |
| CN114205722A (en) * | 2020-09-17 | 2022-03-18 | 通用微(深圳)科技有限公司 | Silicon-based microphone device and electronic equipment |
| CN114205721A (en) * | 2020-09-17 | 2022-03-18 | 通用微(深圳)科技有限公司 | Silicon-based microphone device and electronic equipment |
| WO2022135213A1 (en) * | 2020-12-25 | 2022-06-30 | 歌尔微电子股份有限公司 | Mems sensor chip, microphone, and electronic device |
| CN108600928B (en) * | 2018-04-20 | 2024-05-31 | 杭州士兰集成电路有限公司 | MEMS device and method of manufacturing the same |
-
2013
- 2013-05-03 CN CN 201320236653 patent/CN203279172U/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104113810A (en) * | 2014-07-18 | 2014-10-22 | 瑞声声学科技(深圳)有限公司 | MEMS microphone and preparation method thereof and electronic device |
| CN107360526A (en) * | 2016-05-09 | 2017-11-17 | 上海微联传感科技有限公司 | Silicon microphone and its manufacture method |
| CN108600928A (en) * | 2018-04-20 | 2018-09-28 | 杭州士兰集成电路有限公司 | MEMS device and its manufacturing method |
| CN108600928B (en) * | 2018-04-20 | 2024-05-31 | 杭州士兰集成电路有限公司 | MEMS device and method of manufacturing the same |
| CN113949978A (en) * | 2020-07-17 | 2022-01-18 | 通用微(深圳)科技有限公司 | Sound collection device, sound processing device and method, device and storage medium |
| CN114205722A (en) * | 2020-09-17 | 2022-03-18 | 通用微(深圳)科技有限公司 | Silicon-based microphone device and electronic equipment |
| CN114205721A (en) * | 2020-09-17 | 2022-03-18 | 通用微(深圳)科技有限公司 | Silicon-based microphone device and electronic equipment |
| WO2022135213A1 (en) * | 2020-12-25 | 2022-06-30 | 歌尔微电子股份有限公司 | Mems sensor chip, microphone, and electronic device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee after: Goertek Inc. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: Goertek Inc. |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20200616 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: GOERTEK Inc. |
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| TR01 | Transfer of patent right | ||
| CX01 | Expiry of patent term |
Granted publication date: 20131106 |
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| CX01 | Expiry of patent term |