CN104378724A - MEMS silicon microphone without large back acoustic cavity - Google Patents
MEMS silicon microphone without large back acoustic cavity Download PDFInfo
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- CN104378724A CN104378724A CN201410653763.6A CN201410653763A CN104378724A CN 104378724 A CN104378724 A CN 104378724A CN 201410653763 A CN201410653763 A CN 201410653763A CN 104378724 A CN104378724 A CN 104378724A
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Abstract
The invention provides an MEMS silicon microphone without a large back acoustic cavity. The MEMS silicon microphone comprises a back electrode plate silicon substrate and a vibrating diaphragm located on the back electrode plate silicon substrate. The MEMS silicon microphone is characterized in that the back electrode plate silicon substrate and the vibrating diaphragm which are good in conductivity serve as two electrode plates of a microphone capacitor; a back electrode plate metal electrode is deposited on the back electrode plate silicon substrate, and the back electrode plate metal electrode is electrically connected with the back electrode plate silicon substrate; the back electrode plate silicon substrate is provided with a plurality of TSV sound bores which are in direct communication with atmosphere; the vibrating diaphragm is provided with small bosses; a vibrating diaphragm electrode is deposited on the vibrating diaphragm, and the vibrating diaphragm electrode is electrically connected with the vibrating diaphragm; the vibrating diaphragm electrode and the back electrode plate metal electrode serve as output signal leading-out ends of the two electrode plates of the microphone capacitor and are used for being electrically connected with a CMOS signal amplification circuit; the vibrating diaphragm is supported by a silicon oxide layer and suspended above the back electrode plate silicon substrate, an air gap is formed between the vibrating diaphragm and the back electrode plate silicon substrate, and a capacitor structure is formed by the back electrode plate silicon substrate, the vibrating diaphragm and the air gap. The MEMS silicon microphone is high in sensitivity, good in consistency, high in production good quality rate and capable of being integrated with an ASIC in a packaged mode.
Description
Technical field
The present invention relates to a kind of capacitive-type silicon microphone, particularly disclose a kind of MEMS silicon microphone without the large acoustics cavity in back, belong to the technical field of silicon microphone.
Background technology
Mike's wind energy is converted into the corresponding signal of telecommunication the voice signal of people, is widely used in mobile phone, computer, telephone set, camera and video camera etc.Traditional electret capacitor microphone adopts Teflon as vibration film, and can not bear the high temperature nearly 300 degree of reflow soldering of printed circuit board technique, thus can only separate with the assembling of integrated circuit, independent hand assembled, considerably increases production cost.
The MEMS(Microelectromechanical Systems of nearly 30 years) development of technology, particularly based on the development of silicon MEMS technology, achieve microminiaturization and the low cost of many transducers (as pressure sensor, accelerometer, gyroscope etc.).MEMS silicon microphone starts industrialization, in the application of high-end handsets, replaces traditional electret capacitor microphone gradually.
MEMS microphone mainly still adopts capacitive principle, is made up of, has the spacing of several microns between vibration film and back pole plate a vibration film and back pole plate, forms capacitance structure.After high-sensitive vibration film experiences outside audio frequency sound pressure signal, change the distance between vibration film and back pole plate, thus form capacitance variations.Connect the change that cmos amplifier changes into capacitance variations voltage signal after MEMS microphone, then after amplifying, become electricity output.
The voice sound pressure signal of people is very faint, and vibration film must be very sensitive.Vibrating membrane adopts conventional semiconducter process-deposit to obtain usually, and material can adopt multiple or multilayer material to obtain (such as doped polycrystalline silicon, metal and silicon nitride composite membrane etc.).Due to thermal coefficient of expansion difference and the high-temperature technology of material, the vibration film after preparation has residual stress in various degree, greatly have impact on the sensitivity of vibration film.So, during with polysilicon as vibration film, generally can adopt additional anneal technique after the production, regulate residual stress to drop to minimum; If with silicon nitride as vibration film, in the preparation by regulating the ratio between reacting gas to reduce residual stress.But adopt little to the effect reducing residual stress in this way, and repeatability is bad, realizes also comparatively complicated.In addition, also can adopt the mechanical structure changing vibration film, general plate vibration film be changed into line film, epistasis, or on vibration film, cuts small groove, thus reach the object reducing residual Ying Li ﹑ increase sensitivity.But the method changing vibration film structure can cause complicated process of preparation, increase cost, reduce yield.
Back pole plate, except being formed except electric capacity with vibration film, also has the frequency band controlling microphone, reduces the functions such as acoustic noise.It needs to have certain rigidity, can not because of the vibration of outside or acoustic pressure and deformation.In addition, general design, in order to coordinate the packing forms of advance sound, also need prepare the acoustics cavity of a hundreds of micron on back pole plate, makes sound wave can be communicated to vibrating diaphragm better and obtain high signal to noise ratio.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of MEMS silicon microphone and preparation method thereof being suitable for carrying on the back into sound packing forms is provided, with simplified manufacturing technique, and yield and the sensitivity of capacitance type minitype silicon microphone can be improved.
The present invention is achieved in that a kind of MEMS silicon microphone without the large acoustics cavity in back, comprise back pole plate silica-based and be positioned at the vibrating diaphragm of the silica-based top of described back pole plate, it is characterized in that: back pole plate is silica-based all to conduct electricity well, as the two-plate of microphone electric capacity with vibrating diaphragm; Deposit back pole plate metal electrode on back pole plate is silica-based, the material of back pole plate metal electrode is that Al/Cu alloy or Al/Cu alloy add Au, back pole plate metal electrode and silica-based 1 electrical connection of back pole plate; Back pole plate is silica-based is provided with several TSV acoustic aperture, and TSV acoustic aperture directly communicates with air; Vibrating diaphragm is provided with small convex pillar, and the material of small convex pillar is high silicon silicon nitride, and small convex pillar stops vibrating diaphragm and back pole plate is silica-based is pulled together; Vibrating diaphragm deposits vibrating diaphragm electrode, vibrating diaphragm electrode and vibrating diaphragm electrical connection; Vibrating diaphragm electrode and back pole plate metal electrode are respectively the output signal exit of microphone electric capacity two-plate, are used for realizing being electrically connected with cmos signal amplifying circuit; Vibrating diaphragm and back pole plate is silica-based is bonded to one through Si-Si bonding process, vibrating diaphragm is supported by silicon oxide layer and is suspended from the silica-based top of back pole plate, vibrating diaphragm and back pole plate silica-based between have air gap, back pole plate is silica-based, vibrating diaphragm and air gap form capacitance structure.
Described vibrating diaphragm and back pole plate silica-based between air gap formed by wet etching silica, vibrating diaphragm thickness is 1 ~ 7 μm, and the silica-based thickness of back pole plate is 400 μm.The described MEMS silicon microphone without back large acoustics cavity adopts the silica-based TSV acoustic aperture of through whole back pole plate to realize being communicated with between vibrating diaphragm with ambient atmosphere, and described TSV acoustic aperture is provided with 50 ~ 150, and single aperture is 20 ~ 40 μm.
The silica-based conduction of back pole plate of the present invention is as a pole of electric capacity, and vibration film conduction is as another pole of electric capacity.The silica-based TSV acoustic aperture be provided with of back pole plate is positioned at immediately below vibration film, and it is silica-based that TSV acoustic aperture runs through whole back pole plate.Vibration film is positioned at the top of TSV acoustic aperture and covers whole TSV acoustic aperture face, obtains after vibration film is thinning by monocrystalline silicon piece.Silicon oxide layer for supporting vibration film can realize vibration film and the silica-based electric insulation of back pole plate, and vibration film and back pole plate silica-based between the air gap degree of depth also determined by this silicon oxide layer thickness.Vibration film and back pole plate is silica-based above all deposits metal pad, be respectively vibrating diaphragm electrode and back pole plate metal electrode, metal pad is used for realizing being electrically connected with cmos signal amplifying circuit.
The invention has the beneficial effects as follows: back pole plate of the present invention is silica-based is provided with vibration film, it is legal in back pole plate Bonded on Silicon Substrates by Si prediction, and conductive diaphragm and back pole plate form capacitance structure; To be that monocrystalline silicon piece is thinning form conductive diaphragm, and its conductivity is good, and as a pole of electric capacity, and its residual stress is little and consistency good, thus can improve sensitivity and the yield of microphone.Vibrating diaphragm is provided with small convex pillar, and small convex pillar can reduce the possibility of vibrating diaphragm and the silica-based adhesive of back pole plate, further increases the yield of microphone.The silica-based conductivity of back pole plate is good, as another pole of electric capacity, silica-based being provided with of back pole plate runs through the silica-based TSV acoustic aperture of whole back pole plate, and sound acts on vibrating diaphragm, can change the capacitance variations that causes thus export corresponding voice signal by external cmos circuit by detecting vibrating diaphragm.Product microphone production technology of the present invention is simple, highly sensitive, cost is low, consistency good, yield is high, is highly suitable for carrying on the back into sound packing forms.
Accompanying drawing explanation
Fig. 1 is Total Product structural representation of the present invention.
Fig. 2 is that the A-A of Fig. 1 is to sectional structure schematic diagram.
Fig. 3 is the stereogram of Fig. 2.
In figure: 1, back pole plate is silica-based; 2, vibrating diaphragm; 3, TSV acoustic aperture; 4, air gap; 5, back pole plate metal electrode; 6, silicon oxide layer; 7, small convex pillar; 8, vibrating diaphragm electrode.
Embodiment
With reference to the accompanying drawings 1, accompanying drawing 2 and accompanying drawing 3, the present invention includes that back pole plate is silica-based 1, vibrating diaphragm 2, TSV acoustic aperture 3, air gap (polar plate spacing) 4, back pole plate metal electrode 5, silicon oxide layer (insulating medium layer) 6, small convex pillar 7, vibrating diaphragm metal electrode 8.
Vibrating diaphragm 2 forms by monocrystalline silicon is thinning, is positioned at the top of back pole plate silica-based 1, and back pole plate silica-based 1 and vibrating diaphragm 2 all conduct electricity well, as the two-plate of microphone electric capacity.Back pole plate silica-based 1 deposits back pole plate metal electrode 5, back pole plate metal electrode 5 and silica-based 1 electrical connection of back pole plate.Silica-based several TSV acoustic aperture 3, the TSV acoustic aperture 3 that are provided with of back pole plate run through whole back pole plate silica-based 1, and are uniformly distributed in below vibrating diaphragm 2, and TSV acoustic aperture 3 directly communicates with air.Vibrating diaphragm 2 is provided with small convex pillar 7, and the material of small convex pillar 7 is high silicon silicon nitride, and small convex pillar 7 stops vibrating diaphragm 2 and back pole plate silica-based 1 to be pulled together.Vibrating diaphragm 2 deposits vibrating diaphragm electrode 8, vibrating diaphragm electrode 8 and vibrating diaphragm 2 are electrically connected.The material of the metal level of back pole plate metal electrode 5 and vibrating diaphragm electrode 8 is that Al/Cu alloy or Al/Cu alloy add Au, adopt first depositing metal layers, then dry etching goes out the capable one-tenth of required figure.Vibrating diaphragm electrode 8 and back pole plate metal electrode 5 are respectively the output signal exit of microphone electric capacity two-plate, are used for realizing being electrically connected with cmos signal amplifying circuit; Vibrating diaphragm 2 and back pole plate silica-based 1 are bonded to one through Si-Si bonding process, vibrating diaphragm 2 is supported the top being suspended from back pole plate silica-based 1 by silicon oxide layer 6, air gap 4 is formed between vibrating diaphragm 2 and back pole plate silica-based 1, the thickness of silicon oxide layer 6 determines the degree of depth of air gap 4, simultaneously the insulation property of described silicon oxide layer 6 ensure that the electric insulation of vibrating diaphragm 2 and back pole plate silica-based 1, and back pole plate is silica-based 1, vibrating diaphragm 2 and air gap 4 form capacitance structure.
Air gap 4 between vibrating diaphragm 2 and back pole plate silica-based 1 is formed by wet etching silica, and vibrating diaphragm 2 thickness is 1 ~ 7 μm, and the silica-based thickness of back pole plate is 400 μm.Product microphone of the present invention adopts the TSV acoustic aperture 3 of through whole back pole plate silica-based 1 to realize vibrating diaphragm 2 and being communicated with between ambient atmosphere, the size of TSV acoustic aperture 3, quantity and position can set on demand, generally be provided with 50 ~ 150, single aperture is 20 ~ 40 μm, is as the criterion with lower acoustic noise can obtain required bandwidth.
During product work of the present invention, between vibrating diaphragm 2 and back pole plate silica-based 1, form capacitance structure.When there is sound outside, sound can produce active force to vibrating diaphragm 2, and the surface of vibrating diaphragm 2 is subject to active force and can produces corresponding deformation.When deformation occurs vibrating diaphragm 2, also can there is corresponding change in the capacitance structure formed between vibrating diaphragm 2 with back pole plate silica-based 1, can detect corresponding voice signal by external cmos signal amplifying circuit.
For the function of back pole plate in prior art, the present invention is realized by back pole plate silica-based 1, and the diameter design of TSV acoustic aperture 3 is about 20 ~ 40 μm, and TSV acoustic aperture 3 directly communicates with air, decreases processing step.Vibrating diaphragm 2 forms by single crystal silicon substrate is thinning, simplifies manufacture craft and reduces the stress of vibrating membrane, the consistency that improve product and yield.The two poles of the earth of electric capacity are taken on by back pole plate silica-based 1 and vibrating diaphragm 2, further simplify technique.Silicon oxide layer 6 ensure that the electric insulation of vibrating diaphragm 2 and back pole plate silica-based 1, simultaneous oxidation silicon layer 6 supports vibrating diaphragm 2 and is suspended from back pole plate silica-based 1, the thickness of air gap 4 is determined by the thickness of silicon oxide layer 6, and air gap 4 is obtained by etching oxidation silicon 9 and silica 10, and technique is simple.Vibrating diaphragm 2 is provided with small convex pillar 7, and small convex pillar 7 can reduce the possibility that vibrating diaphragm 2 and back pole plate silica-based 1 are pulled together.The manufacture craft of product of the present invention all adopts ripe technique, and technical process is simple.Product sensitivity of microphone of the present invention is high, consistency good and production acceptance rate is high, can be packaged as a whole with ASIC, uses SMT technique to carry out follow-up printed circuit board (PCB) attachment.
Claims (4)
1. the MEMS silicon microphone without the large acoustics cavity in back, comprise back pole plate silica-based (1) and be positioned at the vibrating diaphragm (2) above described back pole plate silica-based (1), it is characterized in that: back pole plate silica-based (1) and vibrating diaphragm (2) all conduct electricity well, as the two-plate of microphone electric capacity; Silica-based (1) deposits back pole plate metal electrode (5) to back pole plate, and the material of back pole plate metal electrode is that Al/Cu alloy or Al/Cu alloy add Au, back pole plate metal electrode (5) and back pole plate silica-based (1) electrical connection; Back pole plate silica-based (1) is provided with several TSV acoustic aperture (3), and TSV acoustic aperture (3) directly communicates with air; Vibrating diaphragm (2) is provided with small convex pillar (7); Vibrating diaphragm (2) deposits vibrating diaphragm electrode (8), vibrating diaphragm electrode (8) and vibrating diaphragm (2) electrical connection; Vibrating diaphragm electrode (8) and back pole plate metal electrode (5) are respectively the output signal exit of microphone electric capacity two-plate, are used for realizing being electrically connected with cmos signal amplifying circuit; Vibrating diaphragm (2) and back pole plate silica-based (1) are bonded to one through Si-Si bonding process, vibrating diaphragm (2) is supported the top being suspended from back pole plate silica-based (1) by silicon oxide layer (6), have air gap (4) between vibrating diaphragm (2) and back pole plate silica-based (1), back pole plate silica-based (1), vibrating diaphragm (2) and air gap (4) form capacitance structure.
2. according to a kind of MEMS silicon microphone without the large acoustics cavity in back described in claim 1, it is characterized in that: the small convex pillar (7) that described vibrating diaphragm (2) is provided with is high silicon silicon nitride layer, small convex pillar (7) stops vibrating diaphragm (2) and back pole plate silica-based (1) to be pulled together.
3. according to a kind of MEMS silicon microphone without the large acoustics cavity in back described in claim 1, it is characterized in that: the air gap (4) between described vibrating diaphragm (2) and back pole plate silica-based (1) is formed by wet etching silica, vibrating diaphragm (2) thickness is 1 ~ 7 μm, and the thickness of back pole plate silica-based (1) is 400 μm.
4. according to a kind of MEMS silicon microphone without the large acoustics cavity in back described in claim 1, it is characterized in that: the described MEMS silicon microphone without back large acoustics cavity adopts the TSV acoustic aperture (3) of through whole back pole plate silica-based (1) to realize vibrating diaphragm (2) and being communicated with between ambient atmosphere, described TSV acoustic aperture (3) is provided with 50 ~ 150, and single aperture is 20 ~ 40 μm.
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| CN201410653763.6A CN104378724A (en) | 2014-11-18 | 2014-11-18 | MEMS silicon microphone without large back acoustic cavity |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016161670A1 (en) * | 2015-04-08 | 2016-10-13 | 上海微联传感科技有限公司 | Mems silicon microphone and manufacturing method therefor |
| CN106372019A (en) * | 2015-07-20 | 2017-02-01 | 深圳市中兴微电子技术有限公司 | Processing method for response timeout of system bus equipment and timeout processor |
| CN106921923A (en) * | 2015-12-24 | 2017-07-04 | 北京卓锐微技术有限公司 | Mems microphone |
| CN107360526A (en) * | 2016-05-09 | 2017-11-17 | 上海微联传感科技有限公司 | Silicon microphone and its manufacture method |
| CN108622843A (en) * | 2017-03-22 | 2018-10-09 | 中芯国际集成电路制造(上海)有限公司 | MEMS microphone and forming method thereof |
| CN111918188A (en) * | 2020-07-10 | 2020-11-10 | 瑞声科技（南京）有限公司 | MEMS loudspeaker and manufacturing process thereof |
| CN114513730A (en) * | 2022-04-20 | 2022-05-17 | 苏州敏芯微电子技术股份有限公司 | Microphone assembly and electronic equipment |
| CN114513731A (en) * | 2022-04-20 | 2022-05-17 | 苏州敏芯微电子技术股份有限公司 | Microphone assembly and electronic equipment |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100090298A1 (en) * | 2008-10-09 | 2010-04-15 | United Microelectronics Corp. | Mems diaphragm |
| CN201657310U (en) * | 2010-03-08 | 2010-11-24 | 瑞声微电子科技(常州)有限公司 | Mems microphone |
| CN102333254A (en) * | 2011-09-13 | 2012-01-25 | 华景传感科技（无锡）有限公司 | MEMS silicon microphone longitudinally integrated with CMOS circuit, and manufacturing method for the same |
| CN102611975A (en) * | 2012-01-20 | 2012-07-25 | 缪建民 | MEMS silicon microphone employing eutectic bonding and SOI silicon slice and method for producing the same |
| CN103139691A (en) * | 2013-02-22 | 2013-06-05 | 上海微联传感科技有限公司 | Micro-electromechanical system (MEMS) silicon microphone utilizing multi-hole signal operation instruction (SOI) silicon bonding and manufacturing method thereof |
| CN204231666U (en) * | 2014-11-18 | 2015-03-25 | 缪建民 | A kind of MEMS silicon microphone without the large acoustics cavity in back |
-
2014
- 2014-11-18 CN CN201410653763.6A patent/CN104378724A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100090298A1 (en) * | 2008-10-09 | 2010-04-15 | United Microelectronics Corp. | Mems diaphragm |
| CN201657310U (en) * | 2010-03-08 | 2010-11-24 | 瑞声微电子科技(常州)有限公司 | Mems microphone |
| CN102333254A (en) * | 2011-09-13 | 2012-01-25 | 华景传感科技（无锡）有限公司 | MEMS silicon microphone longitudinally integrated with CMOS circuit, and manufacturing method for the same |
| CN102611975A (en) * | 2012-01-20 | 2012-07-25 | 缪建民 | MEMS silicon microphone employing eutectic bonding and SOI silicon slice and method for producing the same |
| CN103139691A (en) * | 2013-02-22 | 2013-06-05 | 上海微联传感科技有限公司 | Micro-electromechanical system (MEMS) silicon microphone utilizing multi-hole signal operation instruction (SOI) silicon bonding and manufacturing method thereof |
| CN204231666U (en) * | 2014-11-18 | 2015-03-25 | 缪建民 | A kind of MEMS silicon microphone without the large acoustics cavity in back |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016161670A1 (en) * | 2015-04-08 | 2016-10-13 | 上海微联传感科技有限公司 | Mems silicon microphone and manufacturing method therefor |
| CN106372019A (en) * | 2015-07-20 | 2017-02-01 | 深圳市中兴微电子技术有限公司 | Processing method for response timeout of system bus equipment and timeout processor |
| CN106372019B (en) * | 2015-07-20 | 2019-04-30 | 深圳市中兴微电子技术有限公司 | A kind of processing method and timeout treatment device of system bus devices response timeout |
| CN106921923A (en) * | 2015-12-24 | 2017-07-04 | 北京卓锐微技术有限公司 | Mems microphone |
| CN107360526A (en) * | 2016-05-09 | 2017-11-17 | 上海微联传感科技有限公司 | Silicon microphone and its manufacture method |
| CN108622843A (en) * | 2017-03-22 | 2018-10-09 | 中芯国际集成电路制造(上海)有限公司 | MEMS microphone and forming method thereof |
| CN111918188A (en) * | 2020-07-10 | 2020-11-10 | 瑞声科技（南京）有限公司 | MEMS loudspeaker and manufacturing process thereof |
| CN114513730A (en) * | 2022-04-20 | 2022-05-17 | 苏州敏芯微电子技术股份有限公司 | Microphone assembly and electronic equipment |
| CN114513731A (en) * | 2022-04-20 | 2022-05-17 | 苏州敏芯微电子技术股份有限公司 | Microphone assembly and electronic equipment |
| CN114513731B (en) * | 2022-04-20 | 2022-06-21 | 苏州敏芯微电子技术股份有限公司 | Microphone assembly and electronic equipment |
| CN114513730B (en) * | 2022-04-20 | 2022-08-23 | 苏州敏芯微电子技术股份有限公司 | Microphone assembly and electronic equipment |
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