CN1744343A - Method for making organic film transistor by high-precision printing - Google Patents
Method for making organic film transistor by high-precision printing Download PDFInfo
- Publication number
- CN1744343A CN1744343A CN 200410073657 CN200410073657A CN1744343A CN 1744343 A CN1744343 A CN 1744343A CN 200410073657 CN200410073657 CN 200410073657 CN 200410073657 A CN200410073657 A CN 200410073657A CN 1744343 A CN1744343 A CN 1744343A
- Authority
- CN
- China
- Prior art keywords
- organic
- layer
- otft
- printing
- high accuracy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The method includes steps of forming following layers: gate on base plate, insulator layer on the base plate, wire electrode film on the insulator layer, an organic intermediate layer, an organic semiconductor layer on the organic intermediate layer, macromolecule defined channel width layer on the organic intermediate layer, an organic electrode film, and an organic protective layer. Methods for forming the said layers are includes as following: Inject Printing, Screen Printing, Blade Coating, Roller Coating, Nano imprinting, Micro Contact Printing or Spin Coating etc. printing modes in high precision.
Description
Technical field
The present invention provides a kind of method of making organic film transistor by high-precision printing, refers to a kind of mode of utilizing the high accuracy printing especially, integrates the intermediate layer technology, makes the method for OTFT.
Background technology
OTFT is by organic conjugate polymer or the made transistor of oligothiophene molecule material, with traditional inorganic transistors by comparison, OTFT can be made at low temperatures, therefore can adopt light, thin and cheap plastics to replace glass in the selection of substrate.In addition, the technology of OTFT is also comparatively simple, with the direct patterning organic film of printing technology, light shield be can reduce and number and vacuum evaporation equipment used, and owing to be fit to plastic base, therefore to roller transmission (roll to roll) processing compatibility height in the future, has very big benefit to reducing manufacturing cost.
OTFT (OTFT) the driving EPD display that solubility pentacene (pentacene) is made has been delivered in 2003 international display collection of thesis (International Display Workshop) in the Philip, with the OTFT establishment of component on plastic base, it is bottom contact-bottom grid (Bottom-Contact/Bottom-Gate) formula structure, grid wherein, the material of source electrode and drain electrode is Au, and utilize the hot evaporation mode of shielding windows (shadow mask) to make, and semiconductor layer is finished in solubility pentacene (pentacene) coating with spin-coating method (Spin Coating).
Take a broad view of the above, there is following shortcoming at least in the manufacture method of the OTFT of prior art:
One, the manufacture method of the OTFT of prior art, the coating of its electrode production method and semiconductor layer, its technology is comparatively complicated and consuming time, increases manufacturing cost, influences the market competitiveness.
Two, the manufacture method of the OTFT of prior art is made electrode in shielding windows evaporation mode, and lead resolution can't be promoted, short circuit easily, lead difficult design etc.
Three, the manufacture method of the OTFT of prior art, it uses the solubility pentacene to have environmental issue, because its employed solvent is the chloroform (chloroform) of industry forbidding.
Summary of the invention
Because the shortcoming of prior art, the object of the present invention is to provide a kind of method of making organic film transistor by high-precision printing, be to use hot evaporation mode to deposit pentacene, and integration intermediate layer (Interlayer) technology, utilize the mode of printing directly to print required figure, reduce manufacturing cost to simplify technology, increase the market competitiveness.
Another object of the present invention is to provide a kind of method of making organic film transistor by high-precision printing, use the required graphic making electrode of the direct patterning of mode of printing, can promote lead resolution, avoid short circuit, with the complexity of simplifying the lead design.
A further object of the present invention is to provide a kind of method of making organic film transistor by high-precision printing, need not use the solvent of chloroform (chloroform) as pentacene, so there is not environmental issue.
For reaching above-mentioned purpose, in the preferred embodiment of the method for making organic film transistor by high-precision printing of the present invention, mainly include the following step: (a) form grid (Gate) on a substrate; (b) form an insulating barrier (Insulator layer) on this substrate and grid; (c) form a lead electrode film on this insulating barrier; (d) form an organic intermediate layer on insulating barrier not by covering place of lead electrode film; (e) form an organic semiconductor layer on this organic intermediate layer; (f) form macromolecule definition channel width layer on this organic semiconductor layer; (g) form an organic electrode film; (h) on organic electrode film and macromolecule definition channel width layer, form an organic protection layer.
The material of described organic semiconductor layer can be semiconducting polymer's material and organic small molecule material is wherein a kind of; Wherein this macromolecule definition channel width layer can be aqueous high molecular and the oiliness macromolecule is wherein a kind of; Organic electrode film can be conductive organic matter and conducts electricity organic wherein a kind of with inorganic mixture; This organic protection layer can include: a polyvinyl alcohol layer (PVA), a polyvinyl phenol layer (PVP) and a polyimide layer (PI).
Wherein, step (a) to the formation method of step (h) can be used ink jet printing method (InjectPrinting), screen painting method (Screen Printing), scraper rubbing method (BladeCoating), rolling method (Roller Coating), nano impression method (Nanoimprinting), micro-contact-printing (Micro Contact Printing) or spin-coating method (Spin Coating) or the like.
Description of drawings
Figure 1A to Fig. 1 H is the preferable of the high accuracy printing of the present invention method of making OTFT
The embodiment schematic diagram.
Drawing reference numeral explanation: 100 substrates; 101 grids; 102 insulating barriers; 103 lead electrode films; 104 organic intermediate layers; 105 organic semiconductor layers; 106 macromolecules definition channel width layer; 107 organic electrode films; 108 organic protection layers.
Embodiment
For can to feature of the present invention, purpose and function have further cognitive with understand, now conjunction with figs. describe in detail as after.
Please refer to Figure 1A to Fig. 1 H, it is the preferred embodiment schematic diagram of the method for making organic film transistor by high-precision printing of the present invention.
Shown in Figure 1A, one plastic base 100 is provided, certainly plastic base 100 must clean earlier, after removing organic substance and fine particles, utilize vacuum evaporation and photoengraving technology, chromium (Cr) or tin indium oxide electric conducting materials such as (ITO) are plated on the plastic base 100, and patterning forms grid (Gate) 101 on substrate 100.
Shown in Figure 1B, the insulating barrier (Insulator layer) 102 that is coated with a high-k with rolling method (Roller Coating) or spin-coating method modes such as (Spin Coating) is on this substrate 100, and wherein the material of this insulating barrier 102 can be selected organic solvent, inorganic solvent or organic material that mixes with inorganic solvent for use.
Shown in Fig. 1 C, utilize vacuum evaporation and photoengraving technology, chromium (Cr) or tin indium oxide electric conducting materials such as (ITO) are plated on the insulating barrier 102, and patterning forms a lead electrode film 103 on this insulating barrier 102.
Shown in Fig. 1 D, mode with ink jet printing method (Inject Printing) or dry ecthing (dryetching) collocation shielding windows (shadow mask), patterning forms an organic intermediate layer (Interlayer) 104, this organic intermediate layer 104 is light alignment polyimides (Photo alignmentpolyimide), in the OTFT channel region, can be so that the crystallite dimension of micromolecule organic material promotes, when making the OTFT operation preferable carrier mobility is arranged, reach the purpose of improving component characteristic and circuit design requirement.
Shown in Fig. 1 E, with hot evaporation (thermal evaporation) or vapour deposition modes such as (vapor phasedeposition), semiconducting polymer's material or organic small molecule material pentacene etc. is plated on this organic intermediate layer 104, form an organic semiconductor layer 105, this organic intermediate layer 104 can make the crystal grain of this organic semiconductor layer 105 strengthen, so can obtain preferable electrical organic semiconductor layer 105, that is promote the electrical of OTFT simultaneously.
Shown in Fig. 1 F, with rolling method (Roller Coating), screen painting method (ScreenPrinting) or spin-coating method high accuracy mode of printings such as (Spin Coating) coating one deck macromolecule layer, form macromolecule definition channel width layer 106 on this organic semiconductor layer 105 with Exposure mode one patterned macromolecule layer again, certainly these macromolecule definition channel width layer 106 visual demands are used aqueous high molecular or oiliness macromolecule, and the thickness of macromolecule definition channel width layer 106 is about the twice of these organic semiconductor layer 105 thickness.
Shown in Fig. 1 G, form an organic electrode film 107 with ink jet printing method (Inject Printing), screen painting method (ScreenPrinting) or the coating of spin-coating method high accuracy mode of printings such as (Spin Coating), as the source electrode (Source) and the drain electrode (Drain) of OTFT, and this organic electrode film 107 can or conduct electricity organic and inorganic mixture with conductive organic matter.
In this preferred embodiment, why with the data line (data line of OTFT, macromolecule definition channel width layer 106) separates with source/drain electrodes (organic electrode film 107) and be manufactured with two reasons, one, last contact (Top contact) structure electrode must be coated on the organic semiconductor layer 105, if with necessary after metal or the conductive oxide deposition through photoengraving technology, and the soup in the photoengraving technology can destroy the structure of organic semiconductor layer 105, makes the component characteristic forfeiture.They are two years old, because of the conductance of existing organic conductive material on the low side, if as data line (data line), then the pressure drop of data line will cause assembly to move, still earlier make data line and raise with the resistance of avoiding data line with metal or conductive oxide, with the high accuracy mode of printing the direct patterning of organic conductive material is formed source/drain electrodes again.
Shown in Fig. 1 H; similarly; with ink jet printing method (Inject Printing); screen painting method (Screen Printing); scraper rubbing method (Blade Coating); rolling method (RollerCoating); nano impression method (Nanoimprinting); micro-contact-printing (MicroContact Printing) or spin-coating method high accuracy mode of printings such as (Spin Coating); form organic protection layer 108; for making OTFT can be subjected to preferable protection; this organic protection layer 108 comprises three-decker: at first be coated with layer of polyethylene alcohol (PVA); be coated with layer of polyethylene phenol (PVP) film again; cover one deck low temperature light alignment polyimides (PI) film at last again; the OTFT of the structure of so, last contact/following grid (Top contact/Bottom gate) is just finished.
In sum, the method of OTFT is made in high accuracy printing of the present invention, integrate intermediate layer technology, utilize the required figure of the direct patterning of mode of printing, can promote lead resolution, avoid short circuit, and simplify the complexity of lead design, to increase carrier mobility, promote the electrical of OTFT; The above person, it only is preferred embodiment of the present invention, it is the structure of last contact/following grid (Topcontact/Bottom gate), can not limit the scope of the invention with it, association obtains easily, such as: use last contact/on grid (Top contact/Top gate), following contact/go up in the structure of grid (Bottomcontact/Top gate) or following contact/following grid (Bottom contact/Bottom gate) or the like, be familiar with this art person after comprehension spirit of the present invention, all can expect changing enforcement, promptly the equalization of doing according to claim of the present invention generally changes and modifies, will not lose main idea of the present invention place, also do not break away from the spirit and scope of the present invention, all should be considered as further enforcement situation of the present invention.
Claims (10)
1, a kind of method of making organic film transistor by high-precision printing is characterized in that its step comprises:
(a) form grid on a substrate;
(b) form an insulating barrier on this substrate and grid;
(c) form a lead electrode film on this insulating barrier;
(d) form an organic intermediate layer on insulating barrier not by covering place of lead electrode film;
(e) form an organic semiconductor layer on this organic intermediate layer;
(f) form macromolecule definition channel width layer on this organic semiconductor layer;
(g) form an organic electrode film;
(h) form an organic protection layer on organic electrode film and macromolecule definition channel width layer.
2, the method for OTFT is made in high accuracy printing as claimed in claim 1, and wherein this substrate can be plastic base.
3, the method for OTFT is made in high accuracy printing as claimed in claim 1, and wherein this grid can be chromium (Cr) and tin indium oxide (ITO) is wherein a kind of.
4, the method for OTFT is made in high accuracy printing as claimed in claim 1, wherein the material of this insulating barrier can be organic solvent, inorganic solvent and organic mix with inorganic solvent wherein a kind of.
5, the method for OTFT is made in high accuracy printing as claimed in claim 1, and wherein this lead electrode film can be chromium (Cr) and tin indium oxide (ITO) is wherein a kind of.
6, the method for OTFT is made in high accuracy printing as claimed in claim 1, and wherein this organic intermediate layer can be light alignment polyimides.
7, the method for OTFT is made in high accuracy printing as claimed in claim 1, and wherein the material of this organic semiconductor layer can be semiconducting polymer's material and organic small molecule material is wherein a kind of.
8, the method for OTFT is made in high accuracy printing as claimed in claim 1, and wherein this macromolecule definition channel width layer can be aqueous high molecular and the oiliness macromolecule is wherein a kind of.
9, the method for OTFT is made in high accuracy printing as claimed in claim 1, and wherein this organic electrode film can be conductive organic matter and conducts electricity organic wherein a kind of with inorganic mixture.
10, the method for OTFT is made in high accuracy printing as claimed in claim 1, and wherein this organic protection layer can include: a polyvinyl alcohol layer (PVA), a polyvinyl phenol layer (PVP) and a polyimide layer (PI).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100736577A CN100499200C (en) | 2004-09-02 | 2004-09-02 | Method for making organic film transistor by high-precision printing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100736577A CN100499200C (en) | 2004-09-02 | 2004-09-02 | Method for making organic film transistor by high-precision printing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1744343A true CN1744343A (en) | 2006-03-08 |
| CN100499200C CN100499200C (en) | 2009-06-10 |
Family
ID=36139628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100736577A Expired - Fee Related CN100499200C (en) | 2004-09-02 | 2004-09-02 | Method for making organic film transistor by high-precision printing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100499200C (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100544053C (en) * | 2006-05-31 | 2009-09-23 | 中国科学院微电子研究所 | A kind of method of preparing anisotropic organic field effect tube combined with stamp technology |
| CN101806973A (en) * | 2010-03-17 | 2010-08-18 | 宜宾盈泰光电有限公司 | Manufacturing method of segment liquid crystal display (LCD) with high contrast |
| CN101840996A (en) * | 2009-03-20 | 2010-09-22 | 德晶电子(江苏)有限公司 | Printed semiconductor transistor and forming method thereof |
| CN104488104A (en) * | 2012-08-01 | 2015-04-01 | 索尼公司 | Semiconductor device, display unit, and electronic apparatus |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2813428B2 (en) * | 1989-08-17 | 1998-10-22 | 三菱電機株式会社 | Field effect transistor and liquid crystal display device using the field effect transistor |
| US6740900B2 (en) * | 2002-02-27 | 2004-05-25 | Konica Corporation | Organic thin-film transistor and manufacturing method for the same |
| JP2004103638A (en) * | 2002-09-05 | 2004-04-02 | Konica Minolta Holdings Inc | Organic transistor element |
| CN1186822C (en) * | 2002-09-23 | 2005-01-26 | 中国科学院长春应用化学研究所 | Organic film transistor and preparing method |
-
2004
- 2004-09-02 CN CNB2004100736577A patent/CN100499200C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100544053C (en) * | 2006-05-31 | 2009-09-23 | 中国科学院微电子研究所 | A kind of method of preparing anisotropic organic field effect tube combined with stamp technology |
| CN101840996A (en) * | 2009-03-20 | 2010-09-22 | 德晶电子(江苏)有限公司 | Printed semiconductor transistor and forming method thereof |
| CN101806973A (en) * | 2010-03-17 | 2010-08-18 | 宜宾盈泰光电有限公司 | Manufacturing method of segment liquid crystal display (LCD) with high contrast |
| CN104488104A (en) * | 2012-08-01 | 2015-04-01 | 索尼公司 | Semiconductor device, display unit, and electronic apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100499200C (en) | 2009-06-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8502228B2 (en) | Thin film transistor array, method for manufacturing the same, and active matrix type display using the same | |
| US7700403B2 (en) | Manufacturing method of semiconductor device | |
| US7601279B2 (en) | Organic semiconductor composition containing cis-decalin | |
| WO2005024956A1 (en) | Electrode substrate, thin-film transistor, display, and its production method | |
| US20120070945A1 (en) | Organic semiconductor device, manufacturing method of same, organic transistor array, and display | |
| EP2218096B1 (en) | Organic transistor, organic transistor array and display apparatus | |
| US7632705B2 (en) | Method of high precision printing for manufacturing organic thin film transistor | |
| KR100770729B1 (en) | Method of manufacturing semiconductor device and method of manufacturing electronic apparatus | |
| CN103283026B (en) | Electronic device | |
| CN100499200C (en) | Method for making organic film transistor by high-precision printing | |
| WO2010034815A1 (en) | Method for forming self-aligned electrodes | |
| JP2010080896A (en) | Field effect transistor, its manufacturing method, and image display | |
| JP2007227595A (en) | Method for fabricating organic thin film transistor element | |
| CN107534056B (en) | Thin film transistor array forming substrate, manufacturing method thereof, and substrate for image display device | |
| JP5103735B2 (en) | Composition for organic semiconductor layer, method for producing thin film transistor, method for producing active matrix device, method for producing electro-optical device, and method for producing electronic apparatus | |
| JP2016163029A (en) | Thin film transistor array, thin film transistor array manufacturing method and pixel display device | |
| JP5181586B2 (en) | Organic semiconductor device, organic semiconductor device manufacturing method, organic transistor array, and display | |
| CN105580121A (en) | Thin film transistor array and production method therefor | |
| JP5685933B2 (en) | THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THIN FILM TRANSISTOR | |
| GB2435717A (en) | Organic active matrix display device | |
| JP6428126B2 (en) | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY MANUFACTURING METHOD, AND IMAGE DISPLAY DEVICE | |
| JP6197306B2 (en) | Thin film transistor manufacturing method | |
| JP2020031100A (en) | Organic thin film transistor, manufacturing method therefor, and electronic device | |
| JP2018182114A (en) | Thin film transistor array, manufacturing method of the same, and image display device | |
| Lee et al. | P‐15: OTFT Backplane for Electrophoretic Display Fabricated by Combined Printing Technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090610 Termination date: 20180902 |