CN1619417A - Multilayer nano imprint lithography - Google Patents
Multilayer nano imprint lithography Download PDFInfo
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- CN1619417A CN1619417A CN 200410095336 CN200410095336A CN1619417A CN 1619417 A CN1619417 A CN 1619417A CN 200410095336 CN200410095336 CN 200410095336 CN 200410095336 A CN200410095336 A CN 200410095336A CN 1619417 A CN1619417 A CN 1619417A
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Abstract
An improved method for nanoimprint lithography and more specifically for providing a nano-scale pattern on a substrate is disclosed. According to the improvement, a mould ( 100 ) and a substrate ( 115 ) are provided wherein the substrate ( 115 ) is provided with a plurality of coating layers ( 120, 125, 130 ) before pressing the mould ( 100 ) and substrate ( 115 ) together for transferring a pattern from the mould ( 100 ) to the substrate ( 115 ). According to the invention, the substrate is provided with an uppermost layer ( 130 ) having a pure anti-adhesive function.
Description
Technical field
Present invention relates in general to the nano imprint lithography field, more particularly, relate to the method and apparatus that on substrate, produces the nano-scale figure.
Background technology
The quantum devices that its characteristic is influenced by the nano-scale structure formed material, for example single-electron device is following promising device electronic age.The exploitation of ultra micro manufacturing technology is absolutely necessary for the production of this class ultra micro device.In practice, handle the limit electron beam lithography of nano particle and made little structure and the figure of manufactured size form possibility to several nanometers based on the method (atomic force microscope) of AFM.Yet those technology hinder the batch manufacturing of these ultra micro lithography applications in device with serial mode work.(nanoimprint lithography NIL) has the internal potential of the promising alternative approach that becomes this class ultra micro device of collateral elaboration to nano imprint lithography.Here, can be used for duplicating in the mold pressing printing process (stamp-print approach), very be similar to compact disk (CD) production method with the die of continuous lithography, the most frequently used electron beam lithography composition.The CD production technology was introduced in 1975, had shown its good mass production capabilities.CD production has at every 6 that produces, and " the whole district of compact disk surpasses total (worst condition) productive rate of 67%.
Nano imprint lithography (NIL) is a kind of known technology that produces the nano-scale figure on substrate.Substrate can for example be a semiconductor material, silicon for example, and indium phosphide or gallium arsenide, and be used for for example producing semiconductor device.Under the situation of other application examples such as biology sensor, substrate can also be other material, for example stupalith, metal or the polymkeric substance with higher glass transition temperature.
Trend in the microelectric technique is to tend to more and more littler size.Usually, All the time in development: about per 3 years sizes are reduced to their half size.For example, produced today and had the commodity parts that size is about the structure of 130nm, but needed even further reduce size.
The ultimate principle of NIL is, is coated in the mechanically deform of the thin layer on the flat board of silicon for example.The NIL method can be compared with the production method of CD:s and can be divided for three steps described:
1. the production of model (that is template): model can be from various materials for example metal, semiconductor, pottery or from some plastics-production.In order on a surface of model, to produce three-dimensional structure, can utilize various lithographic process, depend on requirement to the size and their resolution of structure.Electron beam and X ray lithography are usually used in the physical dimension less than 300nm.Directly laser explosure and UV lithography are used to bigger structure.
The impression (imprint): with polymkeric substance for example the thin layer of polyamide be coated onto on the flat substrate of silicon.This layer is heated to certain temperature, so-called imprint temperature.Model and substrate are forced together so that the inverted structure of model is transferred on the on-chip polymeric layer.In imprint step, anti-corrosion film is heated to above the temperature of its glass transition temperature.Under this temperature, the anti-corrosion film of thermoplasticity becomes the liquid of thickness and can flow, so, can be deformed into the shape of model easily.The viscosity with temperature of anti-corrosion film raises and reduces.
3. structure shifts: in the coarctate district, kept polymer foil in polymeric layer.Final step is to remove the on-chip thin retaining layer that is somebody's turn to do.This can be at so-called " RIB " or O
2For example carry out in the active-ion-etch (RIE) in-plasma device or at anisotropic etching process.This retaining layer is thin more, and the structure that can utilize nano imprint to produce is meticulous more.
Problem about conventional NIL operation is, model can adhere on the thin layer in the pressing mold process, and this makes the reversal pattern that shifts in the thin layer not too accurate.Therefore, model has the thin adherent layer of one deck usually to avoid such adhesion.
The article of Willson etc. " Step and Flash Imprint Lithography:A NewApproach to High-Resolution Patterning ", Proc.SPIE Vol.3676,379～389 (1999) have described the polymkeric substance impression wear-resistance film layer that has integrated preventing viscosity substance in a kind of polymkeric substance.
The impression that another kind of method for stamping utilization combines with the UV exposure that makes polymer cure.Lithographic this alternative method is based on the bi-layer imprint scheme.In the method, the standard quartz mask that a slice is had the chromium surface of band figure carries out active-ion-etch, produces the high resolving power relief image on the surface.Remove remaining chromium, use the individual layer of the self assembly of fluoridizing that template is carried out surface treatment.With the gap between two surfaces of preparation importing of a kind of low viscosity, photopolymerization.Template is contacted with substrate.Make described solution (being called the etching protecting agent) photopolymerization by described quartz template dorsal part exposure.With template and substrate separation, on substrate, stay the relief structure duplicate that UV solidifies.Utilize this method for stamping to produce the picture (features) of size securely less than 40nm.A problem/shortcoming of this technology is that the large area imprinting that it is not suitable for not connecting solarization (stepping) and blocking (stamping)/post-exposure (flashing) must distribute polymkeric substance in the past in each imprint step in this case.
Several challenges relevant with the imprint lithography method are arranged.Critical aspects is the processing of carrying out next level in keeping polymeric layer in the equal resolution that shows.The formation that the metal level of figure is arranged is a purposes.There is the metal level of fine pattern to be used as interconnected in the integrated circuit.They also can be used as the catalyzer of succeeding layer growth.If subsequent metal layer is difficult for etched,, for example promote (lift-off) for example because the cause of crystallographic direction dependence etching speed needs a kind of additional method so.Yet the pure polymers layer is debatable when promoting transition diagram by metal.The non-perpendicular sidewall that is caused by coining manipulation causes tearing of metal film in the lifting process and comes off.If platen member does not have vertical sidewall, non-perpendicular sidewall just appears in the imprint lithography.Even printing machine has vertical sidewall really, also can be owing to the picture bottom from impression is removed the required descum step of residual polymer and form non-perpendicular sidewall the film of impression.Therefore, need a kind of like this technology, it will promote relevant problem with the metal of using the anti-corrosion film of individual layer and minimize.
Those stamping techniques of discussing about the inventor also have other problem, and for example, if substrate and organic material are changed, the surface adhesion characteristic just changes.This causes process limitations in polymeric material and specific for example combinations such as silicon, nickel, quartz, glass, silicon nitride of substrate material.On model, utilize release agent to be applied in the commercial production with being not enough to guarantee this process safety.
So need seek such nano imprint lithography method and apparatus, that is, for shifting even meticulousr nano-scale structure provides possibility and elimination/alleviate about the problem of model the moulding process with the substrate adhesion to substrate from model in the mode of economy.
Summary of the invention
The objective of the invention is to eliminate/alleviate above-mentioned shortcoming/problem.
So, an object of the present invention is to seek such nano imprint lithography method and apparatus, that is, and for providing possibility to substrate from model transfer even meticulousr nano-scale structure.
Another object of the present invention is to seek such nano imprint lithography method and apparatus, and they can alleviate the problem about model in the moulding process and substrate adhesion.
Another object of the present invention is to seek such nano imprint lithography method and apparatus, and they can improve the accuracy of coining pattern on the substrate.
Another object of the present invention is to seek such nano imprint lithography method and apparatus, and they improve the impression quality by reducing the adhesion and the polymkeric substance of polymkeric substance on model surface from peeling off of substrate.
Another object of the present invention is to seek such nano imprint lithography method and apparatus, and they provide the more Ultrastructural possibility of high accuracy of economic batch process.
According to an aspect of the present invention, the present invention has realized above-mentioned purpose by a kind of method that is used on substrate forming structured graphics, and wherein, described substrate is applied many layer coatings before pressing mold, and herein, each layer coating has specific effect.
According on the other hand, the present invention has realized above-mentioned purpose by a kind of method that forms structured graphics on substrate is provided, and wherein, the uppermost coating on substrate has antiseized completely effect.
According to another aspect of the invention, a kind of substrate is provided, purpose is in order to form the nano-scale figure on this substrate, wherein, described substrate is applied, and many layers have the coating of specific effect separately.
According to another aspect of the invention, substrate of the present invention has the uppermost coating of one deck, and it has antiseized completely effect.
Though preamble has been summarized the present invention, the present invention is limited by independent claims 1 and 8.Other embodiment of the present invention is limited by dependent claims 2～7,9～11.
The accompanying drawing summary
Fig. 1 has explained substrate and the model that forms the nano-scale figure by the present invention.
Fig. 2 has explained a kind of process flow diagram that the method for nano-scale figure is provided on substrate, it can be used for implementing the present invention.
Detailed description of the preferred embodiments
The present invention is based on and identify in the nano imprint lithography process about the incorporate problem/shortcoming of preventing viscosity substance in on-chip polymkeric substance impression wear-resistance film layer, article " Step and Flash Imprint Lithography:A New Approach toHigh-Resolution Patterning " as Willson etc., Proc.SPIE Vol.3676,379～389 (1999) have described the polymkeric substance impression wear-resistance film layer that has integrated preventing viscosity substance in a kind of polymkeric substance.This method does not provide best anti-adhesion characteristic fully, causes polymkeric substance to adhere on the model, and the result hinders batch economic on substrate to produce even meticulousr nano-scale figure.
Fig. 1 has explained the present invention.Model 100 has recess 105 and the projection 110 that forms the ultrastructure figure.Projection has the height of about 150nm.Model 100 can be by any suitable material preparation well known by persons skilled in the art, for example glass, silicon, perhaps metal nickel for example.According to an embodiment preferred, can be Teflon to described model coating
TMThe antiseized thin layer 190 of such form of single sheet.The thickness of thin layer 190 is about 10nm or littler and for example can obtain to die by chemical vapor deposition as is known to persons skilled in the art.Provide by any suitable material well known by persons skilled in the art substrate 115 of making of silicon (or silex glass) for example.The thin layer of adhesive 120 (being also referred to as bonding coat) that coating is made of for example 3-methacryloxypropyl-dimethylchlorosilane or hexamethyldisilane HMDS on substrate 115.This layer 120 is preferably about 10nm or thinner and can obtain by rotary coating for example.The layer that is shaped (being also referred to as the impression wear-resistance film layer) 125 is provided on layer 120 then, and it can be constituted and be had the preferred thickness of about 150nm by for example PMMA (polymethylmethacrylate).Impression PMMA layer 125 can by utilize suitable known technology for example rotary coating provide.According to the present invention, on impression wear-resistance film layer 125, provide an adherent layer 130.Adherent layer 130 can be for example by 13 fluoro-(1H, 1H, 2H, 2H) tetrahydrochysene octyl amine or the similar compound of partially or completely fluoridizing formation.As those skilled in the art understood, adherent layer 130 preferably had 10nm or littler thickness, and can impressed on the PMMA polymeric layer 125 by for example rotary coating.
With reference to figure 2, explained the process flow diagram of a nano imprint method of the present invention.In step 200, according to above having made model 100 and substrate 115 with reference to the description of figure 1.In step 210, will have three layer 120,125 and 130 substrate 115 and model 100 then and be heated to above glass transition temperature, cause the softening of layer 125.In step 220, utilize the air pressure of about 5～100 crust, preferred about 30～60 crust, according to so-called soft impression method (softimprint method), reach by model being pressed into coating substate 120,125,130＜300sec carries out figure transfer.Described soft impression method utilizes a pressure controling chamber with one deck flexible membrane, and anti-the stopping (counterstay) that described flexible membrane constitutes substrate/model is suitable for substrate and model are forced together, and acting force distributes between them equably.Soft impression method is disclosed in International Patent Application WO 01/42858 A1 of issue.Subsequently by in step 225, pressing the known way cooling and solidifying and layer 125 curing that will be shaped.In step 230, make model 100 break away from substrate 115.Like this, by the figure of structuring nano-scale is provided on substrate shifting reversal pattern on the model.
The present invention has overcome problem relevant with known technology and shortcoming by be provided at a top uppermost adherent layer that for example impresses wear-resistance film layer to substrate.Promote the even distribution of adherent layer like this, also make the homogeneity of adherent layer not too important for the accuracy and the precision of final imprint result.The present invention provides the thin individual layer of one deck as adherent layer, for example Teflon on model
TMSuch individual layer.Teflon of the present invention
TMSuch thickness in monolayer is about 10nm or littler, yet this thickness can become according to the chemical property of using.
By using stamping technique of the present invention, imprint result shows higher quality, and in fact polymkeric substance does not adhere to model surface, and polymkeric substance does not break away from from substrate.In addition, imprint result has shown that above-mentioned problem about non-perpendicular sidewall has alleviated.So, a kind of ultra micro figure method for stamping is disclosed, it provides higher accuracy, and this also makes and may produce in batches economically even meticulousr structure on substrate.
By illustrative embodiment the present invention has been described.Described figure be not draw in proportion but just to the explaination principle of work of the present invention.A lot of to those skilled in the art the modification is possible, for example about other functional layer, for example between substrate 115 and adherent layer 130, introduce so-called lifting layer (lift-off layer) etc., and can not depart from scope of the present invention by follow-up claims regulation.
Claims (11)
1. nano imprint lithography method that structuring nano-scale figure is provided on substrate (115), it is by forcing together model (100) and substrate (115) and reversal pattern being transferred on the described substrate from described model, a lot of coatings that described substrate is applied, comprise impression wear-resistance film layer (125), described method is characterised in that it comprises this step :-the uppermost coating with antiseized effect completely (130) is being provided on substrate before the pressing mold.
2. the method for claim 1, it also comprises the steps:
-bonding coat (120) that is positioned at described impression wear-resistance film layer (125) below was provided in the past at pressing mold.
3. the method for claim 1, it also comprises the steps:
-form described adherent layer (130) so that it comprises partially fluorinated compound.
4. the method for claim 1, it also comprises the steps:
-form described adherent layer (130) so that it comprises the compound of fluoridizing fully.
5. the method for claim 1, it also comprises the steps:
-form described adherent layer (130) so that it comprises 13 fluoro-(1H, 1H, 2H, 2H) tetrahydrochysene octyl amine.
6. the method for claim 1, it also comprises the steps:
-one deck adherent layer (190) is being provided on described model before the pressing mold.
7. the method for claim 1, it also comprises the steps:
-provide acting force between described substrate and model, to distribute uniformly substantially by utilizing a pressure controling chamber with one deck flexible membrane, described figure transfer is arrived in the process of described substrate (115), described substrate or model are positioned on the described flexible membrane.
8. a substrate (115), it designs in order to be printed on formation nano-scale figure on the described substrate by nano imprint, a lot of coatings that described substrate (115) is applied, comprise one deck impression wear-resistance film layer (125), it is characterized in that the uppermost coating (130) on substrate is to form by the compound that gives its antiseized effect completely.
9. the substrate of claim 8, wherein, described adherent layer (130) comprises partially fluorinated compound.
10. the substrate of claim 8, wherein, described adherent layer (130) comprises the compound of fluoridizing fully.
11. the substrate of claim 8, wherein, described adherent layer (130) comprises 13 fluoro-(1H, 1H, 2H, 2H) tetrahydrochysene octyl amine.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US48168603P | 2003-11-21 | 2003-11-21 | |
| EP03078683.4 | 2003-11-21 | ||
| US60/481,686 | 2003-11-21 | ||
| EP03078683A EP1533657B1 (en) | 2003-11-21 | 2003-11-21 | Multilayer nano imprint lithography |
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| CN1619417A true CN1619417A (en) | 2005-05-25 |
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| CN 200410095336 Pending CN1619417A (en) | 2003-11-21 | 2004-11-19 | Multilayer nano imprint lithography |
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| JP (1) | JP3892457B2 (en) |
| CN (1) | CN1619417A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100451840C (en) * | 2006-04-04 | 2009-01-14 | 吉林大学 | Method for constructing micrometre, submicrometre structural surface |
| CN102848757A (en) * | 2012-09-25 | 2013-01-02 | 深圳市杰瑞表面技术有限公司 | Rubbing method of stereoscopic pattern |
| CN103018819A (en) * | 2012-11-09 | 2013-04-03 | 浙江大学 | Method for preparing high polymer micro-nano fiber bragg grating based on nanoimprint lithography |
| CN101144977B (en) * | 2006-09-13 | 2013-07-03 | 三星电子株式会社 | Mold for nano-imprinting and method of manufacturing the same |
| CN104838046A (en) * | 2012-12-18 | 2015-08-12 | Lpkf激光电子股份公司 | Method for the metallation of a workpiece and a layer structure made up of a workpiece and a metal layer |
| CN113272685A (en) * | 2019-01-07 | 2021-08-17 | Viavi科技有限公司 | Multilayer article comprising organic layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4898820B2 (en) * | 2005-10-20 | 2012-03-21 | エージェンシー フォー サイエンス，テクノロジー アンド リサーチ | Hierarchical nanopatterns produced by nanoimprint lithography |
| ATE472508T1 (en) * | 2005-11-02 | 2010-07-15 | Ilyanok Alexander Mikhailovich | NANOLITHOGRAPHY DEVICE WITH SCANNING BEAM AND OPERATING METHOD THEREFOR |
| US7955516B2 (en) * | 2006-11-02 | 2011-06-07 | Applied Materials, Inc. | Etching of nano-imprint templates using an etch reactor |
| KR101563874B1 (en) * | 2007-02-07 | 2015-10-29 | 주식회사 에스앤에스텍 | Blank Stamp and the Stamp used for Nano Imprint Lithography |
| US8101519B2 (en) | 2008-08-14 | 2012-01-24 | Samsung Electronics Co., Ltd. | Mold, manufacturing method of mold, method for forming patterns using mold, and display substrate and display device manufactured by using method for forming patterns |
| JP5518538B2 (en) | 2009-03-26 | 2014-06-11 | 富士フイルム株式会社 | RESIST COMPOSITION, RESIST LAYER, IMPRINT METHOD, PATTERN FORMED BODY, MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD, AND MAGNETIC RECORDING MEDIUM |
| KR101708256B1 (en) | 2009-07-29 | 2017-02-20 | 닛산 가가쿠 고교 가부시키 가이샤 | Composition for forming resist underlayer film for nanoimprint lithography |
| US20220390839A1 (en) * | 2021-06-03 | 2022-12-08 | Viavi Solutions Inc. | Method of replicating a microstructure pattern |
-
2004
- 2004-11-19 CN CN 200410095336 patent/CN1619417A/en active Pending
- 2004-11-22 JP JP2004338054A patent/JP3892457B2/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100451840C (en) * | 2006-04-04 | 2009-01-14 | 吉林大学 | Method for constructing micrometre, submicrometre structural surface |
| CN101144977B (en) * | 2006-09-13 | 2013-07-03 | 三星电子株式会社 | Mold for nano-imprinting and method of manufacturing the same |
| CN102848757A (en) * | 2012-09-25 | 2013-01-02 | 深圳市杰瑞表面技术有限公司 | Rubbing method of stereoscopic pattern |
| CN103018819A (en) * | 2012-11-09 | 2013-04-03 | 浙江大学 | Method for preparing high polymer micro-nano fiber bragg grating based on nanoimprint lithography |
| CN103018819B (en) * | 2012-11-09 | 2014-05-21 | 浙江大学 | Method for preparing high polymer micro-nano fiber bragg grating based on nanoimprint lithography |
| CN104838046A (en) * | 2012-12-18 | 2015-08-12 | Lpkf激光电子股份公司 | Method for the metallation of a workpiece and a layer structure made up of a workpiece and a metal layer |
| CN113272685A (en) * | 2019-01-07 | 2021-08-17 | Viavi科技有限公司 | Multilayer article comprising organic layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3892457B2 (en) | 2007-03-14 |
| JP2005159358A (en) | 2005-06-16 |
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