CN1239316A

CN1239316A - Member separating apparatus and processing apparatus

Info

Publication number: CN1239316A
Application number: CN99104710A
Authority: CN
Inventors: 坂口清文; 米原隆夫; 近江和明; 柳田一隆; 都川岁一
Original assignee: Canon Inc
Current assignee: Canon Inc
Priority date: 1998-04-01
Filing date: 1999-04-01
Publication date: 1999-12-22
Also published as: KR20030008197A; KR100440242B1; EP0948032A3; US6540861B2; KR100408605B1; EP0948032A2; TW434731B; KR100401449B1; KR20030008196A; KR100452518B1; KR20030011267A; US20010001975A1; KR20030007369A; KR19990082853A; US20030089455A1; KR100413146B1

Abstract

This invention is to prevent a substrate from dropping when it is transferred/received to/from a separating apparatus. The support surfaces of substrate holding portions (22, 23) are made horizontal, and a substrate (21) to be separated is mounted on one substrate holding portion (22) in a horizontal state (2A). The substrate holding portions (22, 23) are pivoted about rotary shafts (26, 27), respectively, to make the support surfaces of the substrate holding portions (22, 23) vertical so that the substrate (21) is sandwiched by the substrate holding portions (22, 23) (2B).

Description

Member separating apparatus and processing unit (plant)

The present invention relates to member separating apparatus and processing unit (plant), member separation method and Semiconductor substrate manufacture method.

Substrate (SOI substrate) with SOI (silicon-on-insulator) structure promptly has the substrate of monocrystalline silicon layer on insulating barrier.Adopt the device of this soi structure to have many advantages that common silicon substrate can't obtain.The example of these advantages is as follows:

(1) because dielectric isolation can improve integrated level easily.

(2) can improve capability of resistance to radiation.

(3) can improve the operating rate of device because parasitic capacitance is little.

(4) do not need the trap step.

(5) can prevent locking.

(6) can make the field-effect transistor that exhausts fully with the film manufacture method.

Because soi structure has above-mentioned various advantage, so carried out various researchs to its manufacture method nearly decades.

As a kind of SOI technology, known already with SOS (silicon on sapphire) technology of CVD (chemical vapor deposition) method heteroepitaxial growth silicon on the monocrystalline sapphire substrate.This SOS technology once was considered to the most ripe SOI technology.But because for example the lattice mismatch in the interface between silicon layer and the below Sapphire Substrate produces a large amount of crystal defects, the aluminium of forming Sapphire Substrate is mingled in the silicon layer, substrate costliness and be difficult to obtain big area, the SOS technology fails to obtain practical application so far.

After the SOS technology, various SOI technology have appearred.For these SOI technology,, various methods had been inquired in order to reduce lattice defect and manufacturing cost.The example of these methods is as follows.First method is that oxonium ion is injected substrate to form buried oxide layer.Second method is by two wafers of oxidation film bonding and polishes or corrode one of them wafer so that stay monocrystalline silicon layer on oxide-film.The third method be with hydrogen ion be injected into the following desired depth of the surface of silicon that has oxide-film, with this substrate bonding to another substrate, on oxide-film, stay monocrystalline silicon layer, peel off this bonded substrate (another substrate) again with the method for heat treatment and so on.

The applicant discloses a kind of new SOI technology in Japan Patent No.5-21338.In this technology, by means of first substrate that obtains having making nonporous monocrystalline layer on the single crystal semiconductor substrate of porous layer, by insulating barrier (SiO ₂) be bonded to second substrate.Separate two substrates again at the porous layer place, thereby the nonporous monocrystalline layer is transferred to second substrate.The advantage of this technology is that soi layer has excellent film gauge uniformity, can reduce the defect concentrations in crystals in the soi layer, this soi layer has high surface smoothness, do not need expensive special manufacturing equipment, and the SOI substrate that has the soi film of approximately hundreds of dust to 10 μ of thickness m can be made with same equipment.

The applicant also discloses a kind of technology in Japan Patent No.7-302889, this technology is with first and second substrate bondings, first substrate is not destroyed first substrate from second substrate separation, surface to first substrate separated flattens, and makes porous layer once more so that reuse first substrate.In this technology, do not waste first substrate, but thereby can reduce manufacturing cost and simplified manufacturing technique greatly.

For the ease of carrying out large-scale production, must reduce the factor that reduces rate of finished products as far as possible with above-mentioned technology.For example, separate in the series of processes of bonded substrate stack at the porous layer place, the danger of avoiding substrate to fall is very important.

Consider above-mentioned situation, proposed the present invention, its objective is provides a kind of separator and method that is suitable for the member of separate substrate and so on, a kind of processing unit (plant) of the member that is suitable for process substrate and so on and the Semiconductor substrate manufacture method that adopts this separation method is provided.

According to the present invention, a kind of member separating apparatus is provided, it is characterized in that comprising the control device that is used for changing member first type surface direction and come the separator of separating member with fluid stream, control device wherein has control member makes first type surface direction function consistent with first direction and control member make the function of first type surface direction and second direction unanimity.

In this separator, control device preferably receives its first type surface direction member consistent with first direction, making first type surface direction and second direction unanimity and member is moved to separator can be to its position that processes, and makes the direction of first type surface of at least one member in the member that separated device separates consistent with first direction.

In this separator, control device preferably receives its first type surface direction member consistent with first direction, making first type surface direction and second direction unanimity and member is moved to separator can be to its position that processes, and makes the direction of first type surface of the member that separated device separates consistent with first direction.

In this separator, first direction and second direction be perpendicular each other preferably.

In this separator, first direction preferably member first type surface is in the direction of level basically.

In this separator, member to be processed preferably comprises planar plate members, and separator cuts planar plate members along in-plane, thereby this member is separated into two planar plate members.

In this separator, second direction preferably member first type surface is in vertical direction basically, and separator vertically sprays a fluid into planar plate members, thereby this planar plate members is separated into two planar plate members

In this separator, first direction preferably planar plate members first type surface is in the direction of level basically.

In this separator, control device preferably comprises and a pair ofly from two face side member is clipped in the middle and the fixture of fixed flat planar member when separator separating plate member.

In this separator, each fixture preferably comprises the Acetabula device that is used for holding planar plate members.

In this separator, control device preferably comprises at least one whirligig around the rotating shaft rotation of the chuck surface that is parallel to Acetabula device that is used for making in a pair of fixture, and changes the direction of planar plate members first type surface with whirligig.

In this separator, control device preferably comprises and is used for making the whirligig of a pair of fixture around the rotating shaft rotation of the chuck surface that is parallel to Acetabula device, and changes the direction of planar plate members first type surface with whirligig.

In this separator, preferably be placed in the position of a pair of fixture non-interference as the rotating shaft of fixture pivot.

This separator preferably also comprises and is used for making member to wind whirligig perpendicular to the rotating shaft rotation of first type surface.

In this separator, whirligig preferably comprises the device that is used for making the member rotation when the separator separating member.

In this separator, the most handy flow of liquid of separator is come separating member, and whirligig preferably comprises at least one member rotation that is used for making separated device to separate, so that remove the device that sticks to the liquid on the member.

Separator preferably also comprises at least one that be used for making in a pair of fixture and winds whirligig perpendicular to the rotating shaft rotation of fixed surface.

In this separator, when the separator separating member, whirligig preferably makes the fixture rotation.

In this separator, the most handy flow of liquid of separator is come separating member, and at the separated device after separating of member, whirligig preferably makes the fixture rotation, so that remove the liquid that sticks on the fixing member of the device that is fixed.

This separator preferably also comprises the operating room that is used for covering this device.

In this separator, the operating room preferably has can open/close gate.

This separator preferably also comprises the conveyer that is used for that member to be processed is sent to control device and receives separated member from control device, this conveyer is positioned in operating room outside, and member is sent to control device under the situation that gate is opened or from the control device receiving member.

In this separator, when the separated device of member separated, gate was preferably closed at least.

This separator preferably also comprises and is used for making member to be processed with respect to the control device positioning means for positioning.

In this separator, member to be separated preferably has the frangible layer as separating layer, and frangible layer is arranged essentially parallel to the first type surface of member.

According to the present invention, a kind of member processing unit (plant) also is provided, it is characterized in that comprising the control device that is used for changing member first type surface direction, be used for making member to wind the whirligig that rotates perpendicular to the rotating shaft of first type surface, and be used for the processing unit (plant) under the situation of whirligig rotating member, member processed, control device wherein receives its first type surface direction member consistent with first direction, make the first type surface direction consistent with second direction, and member is moved to processing unit (plant) can be to its position that processes, and make the first type surface of the finished member of processed device consistent with first direction.

In this processing unit (plant), first direction and second direction be perpendicular each other preferably.

In this processing unit (plant), first direction preferably member first type surface is in the direction of level basically.

In this processing unit (plant), the most handy liquid of processing unit (plant) comes tool member, and after the processing of the processed device of member, and whirligig makes the member rotation stick to liquid on the member with removing.

According to the present invention, a kind of processing unit (plant) also is provided, it is characterized in that comprising the fixture that is used for fixing member, be used for changing the control device of direction of the fixed surface of fixture, be used for processing unit (plant) that the member that fixture is fixed is processed, and just be used at processing unit (plant) in tool member and/or make when having processed member the fixing member of fixture wind whirligig perpendicular to the rotating shaft rotation of fixed surface, when control device wherein will receive member to be processed in fixture, make the direction of fixed surface consistent with first direction, after fixture receives and secures member, make the direction of fixed surface of fixture consistent with second direction, and fixture moved to the position that processing unit (plant) can be processed member, and after finishing processing, make the direction of fixed surface of fixture consistent with first direction with processing unit (plant).

According to the present invention, a kind of member separation method is provided, has it is characterized in that comprising the controlled step of the receiving step, the first type surface direction that makes member and the second direction unanimity that receive its first type surface direction member consistent and with the separating step of fluid flow point from member with first direction.

This separation method preferably also comprises direction second controlled step consistent with first direction of the first type surface that makes at least one separated in separating step member.

This separation method preferably also comprises direction second controlled step consistent with first direction of the first type surface that makes member separated in separating step.

In this separation method, first direction and second direction be perpendicular each other preferably.

In this separation method, first direction preferably member first type surface is in the direction of level basically.

In this separation method, member to be processed preferably comprises planar plate members, and separating step comprises along in-plane cutting planar plate members, thereby this member is separated into two planar plate members.

In this separation method, second direction preferably planar plate members first type surface is in vertical direction basically, and separating step comprises and vertically spray a fluid into planar plate members, thereby planar plate members is separated into two planar plate members.

In this separation method, first direction preferably planar plate members first type surface is in the direction of level basically.

In this separation method, separating step preferably comprises from two face side member is clipped in the middle and the fixed flat planar member.

In this separation method, separating step preferably is included in member to be processed is wound under the situation of rotating perpendicular to the rotating shaft of first type surface, comes separating member with fluid stream.

In this separation method, separating step preferably comprises uses the fluid separation applications member, and the method preferably also comprises, and after member is separated in separating step, rotates a member of separated mistake at least, so that remove the liquid that sticks on the member.

In this separation method, be preferably in and carry out separating step in the operating room to prevent liquid-scattering.

In this separation method, member to be processed preferably has the frangible layer as separating layer, and frangible layer is arranged essentially parallel to the first type surface of member.

In this separation method, frangible layer preferably comprises porous layer.

In this separation method, frangible layer preferably comprises the layer with microvoid hole.

In this separation method, the most handy method that is bonded to few two planar plate members prepares member to be processed, and at least one comprises Semiconductor substrate in two planar plate members.

In this separation method, Semiconductor substrate preferably comprises monocrystalline substrate.

In this separation method, the most handy method that is bonded to few two planar plate members prepares member to be processed, and at least one comprises dielectric substrate in two planar plate members.

In this separation method, dielectric substrate preferably comprises quartz substrate.

In this separation method, the most handy method that is bonded to few two planar plate members prepares member to be processed, and at least one comprises transparent substrates in two planar plate members.

In this separation method, the most handy first substrate that will inwardly have non-porous layer and porous layer from the surface in succession prepares member to be processed via the method that non-porous layer is bonded to second substrate.

In this separation method, non-porous layer preferably has monocrystalline silicon layer.

In this separation method, non-porous layer preferably has the insulating barrier on the monocrystalline silicon layer.

In this separation method, insulating barrier is preferably made by silica.

In this separation method, second substrate preferably comprises dielectric substrate.

In this separation method, second substrate preferably comprises transparent substrates.

In this separation method, second substrate preferably comprises quartz substrate.

In this separation method, porous layer is the most handy to carry out anodised method to monocrystalline substrate and makes.

In this separation method, the most handy have the method for first substrate of microvoid hole layer to prepare member to be processed to combination second substrate bonding.

In this separation method, the most handy method that ion is injected among the monocrystalline substrate prepares microvoid hole layer.

In this separation method, preferably water is as fluid.

According to the present invention, a kind of manufacture method of Semiconductor substrate is provided, it is characterized in that comprising the following step: the preparation combination has first substrate of porous layer or microvoid hole layer, with first substrate bonding to second substrate with the preparation bonded substrate stack, with any method in the above-mentioned separation method, as the Disengagement zone, bonded substrate stack is separated into first substrate side and second substrate side with porous layer or microvoid hole layer, and removes porous layer or the microvoid hole layer of staying on second substrate side.

This Semiconductor substrate manufacture method preferably also is included in bonded substrate stack and removes the porous layer stay on first substrate side or microvoid hole layer after separated so that reuse the step of first substrate.

In this Semiconductor substrate manufacture method, the most handy double conductive substrate carried out anodised method and made porous layer.

In this Semiconductor substrate manufacture method, preferably be used in the method for injecting ion in the Semiconductor substrate and make microvoid hole layer.

From the following detailed description of reference accompanying drawing to the embodiment of the invention, further purpose of the present invention, characteristics and advantage will become obvious.

Figure 1A-1E has explained according to the present invention each step in the SOI substrate manufacture process of most preferred embodiment;

Fig. 2 A-2C shows the principle of the separator of most preferred embodiment according to the present invention;

Fig. 3 schematic diagram has illustrated first kind of arrangement of separator;

Fig. 4 schematic diagram has illustrated first kind of arrangement of separator;

Fig. 5 schematic diagram has illustrated first kind of arrangement of separator;

Fig. 6 schematic diagram has illustrated first kind of arrangement of separator;

Fig. 7 schematic diagram has illustrated first kind of arrangement of separator;

Fig. 8 shows first kind of arrangement of the adjusting mechanism that is used for adjusting the spacing between the substrate standing part;

Fig. 9 shows second kind of arrangement of the adjusting mechanism that is used for adjusting the spacing between the substrate standing part;

Figure 10 schematic diagram has illustrated second kind of arrangement of automatic separating apparatus;

Figure 11 schematic diagram has illustrated second kind of arrangement of automatic separating apparatus;

Figure 12 schematic diagram has illustrated second kind of arrangement of automatic separating apparatus;

Figure 13 schematic diagram has illustrated second kind of arrangement of automatic separating apparatus;

Most preferred embodiment of the present invention is described with reference to the accompanying drawings.

Figure 1A-1E has explained according to the present invention each step in the SOI substrate manufacture process of most preferred embodiment.

In the step shown in Figure 1A, prepared monocrystalline substrate 11, and on substrate surface, made porous silicon layer 12 with the method for anodic oxidation and so on.In the step shown in Figure 1B, on porous silicon layer 12, make nonporous monocrystalline silicon layer 13 with epitaxial growth method.Then oxidation is carried out to form SiO in the surface ₂Layer 15.Make first substrate 10 with this operation.

In the step shown in Fig. 1 C, prepared second substrate of forming by monocrystalline silicon 20.First substrate 10 and second substrate 20 are in contact with one another, make second substrate 20 face insulating barrier 15.Then, with anode linkage, pressurization, heating or their combination, make first substrate 10 and second substrate, 20 bondings.Insulating barrier 15 can be produced on the nonporous monocrystalline silicon layer 13 as mentioned above, or on second substrate 20, or on the two, as long as when first and second substrates are contacted with each other, obtain the state shown in Fig. 1 C.

In the step shown in Fig. 1 D, two the substrate of bonding is separated at porous silicon layer 12 places each other.Thereby go up in second substrate side (10 "+20) form by porous silicon layer 12 ", the sandwich construction formed of monocrystalline silicon layer 13, insulating barrier 15 and monocrystalline substrate 20.On first substrate side (10 '), porous layer 12 ' is produced on the monocrystalline substrate 11.

At after separating, the porous silicon layer of staying on first substrate 12 ' is eliminated, and just substrate surface is flattened if needed, thereby first substrate is used as the monocrystalline substrate 11 of making first substrate 10 again.

After bonded substrate is separated, in the step shown in Fig. 1 E, second substrate side (10 "+20) lip-deep porous layer 12 " optionally removed.Obtain the sandwich construction formed by monocrystalline silicon layer 13, insulating barrier 15 and monocrystalline substrate 20 with this operation, that is had the substrate of soi structure.

Not only monocrystalline substrate, and dielectric substrate (for example quartz substrate) or transparent substrates (for example quartz substrate) all can be used as second substrate.

In the present embodiment, for the ease of two substrate bondings are separated them then, in the Disengagement zone, made porous layer 12 with fragile structures.For example also can making, microvoid hole layer replaces porous layer.Can make microvoid hole layer with the method that ion is injected among the Semiconductor substrate.

In the present embodiment, in the step shown in Fig. 1 D, that is in the operation of the substrate (hereinafter referred to as bonded substrate stack) that separates the method preparation of using two substrates of bonding, the Disengagement zone that highly pressurised liquid or gas (fluid) are injected into bonded substrate stack to be breaking up porous layer, thereby bonded substrate stack is separated into two substrates.

[principle of separator]

The principle of the separator of most preferred embodiment according to the present invention is at first described.The separator of this embodiment adopts the water jet method.Usually, the water jet method is incited somebody to action the water flow jet of high speed, high pressure to object, so that for example process, remove from the surface coated film or clean surface (seeing " WaterJet ", Vol.1, No.1, p4, (1984)).

This separator is ejected into the porous layer (separated region) of bonded substrate stack along the substrate surface direction with the liquid or gas (fluid) stream of high speed and high pressure, so that optionally break up porous layer, thereby separates substrate stack at the porous layer place.Below liquid stream is called " jet ".The liquid or the gas (fluid) that form jet are called " jet media ".The gas of the alkali of the acid of the organic solvent of water, ethanol and so on, hydrofluoric acid or nitric acid and so on, NaOH and so on, other alkali, air, nitrogen, carbonic acid gas, rare gas or etchant gas or other gas and so on all might be used as jet media.

Fig. 2 A-2C shows the principle of the separator of most preferred embodiment of the present invention.This separator has a pair of

substrate standing part

22 and 23 that is used for supporting

substrate.Rotating shaft

24 and 25 is connected to substrate standing part 22 and 23.

Substrate standing part

22 and 23 is supported respectively so that 26 and 27 rotations freely around the shaft.

For bonded substrate stack 21 being separated into two

substrate

21a and 21c, at first, shown in Fig. 2 A, make substrate standing part 22 become level with 23 substrate support surface.Bonded substrate stack 21 is installed in the precalculated position on the substrate standing part 22 and holds on the substrate support surface.

Then, shown in Fig. 2 B,

substrate standing part

22 and 23 is 26 and 27 rotations around the shaft respectively, make it toward each other, so bonded substrate stack 21 is clipped in the middle by

substrate standing part

22 and 23 and fixes.At this moment, substrate standing part 22 is vertical with 23 substrate support surface.

At this moment, under the situation of bonded substrate stack 21 24 and 25 rotations around the shaft, jet media (for example water) 29 sprays and injects the Disengagement zone (porous region) of bonded substrate stack 21 from nozzle 28.In this way, bonded substrate stack 21 is separated into two substrate 21a and 21c.In this separation process, can be without vacuum cup fixing bonded substrate stack 21.

Shown in Fig. 2 C,

substrate standing part

22 and 23 is 26 and 27 rotations around the shaft respectively, become level until the substrate support surface.In this operating process, substrate 21a is held by substrate standing part 22, and substrate 21c is held by substrate standing part 23.

Use liquid such as water as jet media then, separated

substrate

21a and 21c can be with 24 and 25 high speed rotating

substrate standing parts

22 and 23 method are come dry around the shaft respectively.

In the state shown in Fig. 2 B, that is when bonded substrate stack is clipped in the middle by

substrate standing part

22 and 23, in order to prevent the interference between

substrate standing part

22 and 23, rotating

shaft

26 and 27 must be outside the outstanding vertically surperficial formed space of bonded substrate stack 21 (outstanding space) 30.But be used for along continuous straight runs and move one or two mechanism in

substrate standing part

22 and 23 if settled, then

substrate standing part

22 and 23 can be positioned among the outstanding space 30.

Utilize above-mentioned separator, can under level, bonded substrate stack 21 be sent to separator, and can under level, receive separated

substrate

21a and 21c from separator.In the arrangement that substrate can transmit, can support substrate from downside under level.Therefore reduced the danger that substrate falls in transfer or the transport process.

The concrete arrangement of the separator of most preferred embodiment of the present invention is described below.

[first kind of arrangement of separator]

Fig. 3-7 schematic diagram has illustrated first kind of arrangement of separator.Separator 100 comprises a pair of

substrate control section

150 and 160 that is used for controlling substrate.

Substrate control section

150 and 160 has the

substrate standing part

108 and 109 that is used for supporting substrate respectively.

Substrate standing part

108 and 109 has

vacuum cup groove

108a and 109a as the mechanism that holds

substrate.Sucker

108a and 109a are communicated with respectively with by rotating

shaft

106 and 107 vacuum pipes that extend.Vacuum pipe is connected in the external vacuum pipeline by the rotation vacuum adapter.

Bonded substrate stack 101 combinations to be processed have porous layer 101b as the fragile structures part, and are separated into two

substrate

101a and 101c at porous layer 101b place.

In order to separate bonded substrate stack 101, as shown in Figure 5, bonded substrate stack 101 is clipped in the middle by

substrate standing part

108 and 109 and vertically supports.

In this separator 100, for example bonded substrate stack is configured to make substrate 101a on first substrate side (10 '), and on second substrate side (10 '+20) of substrate 101c in Fig. 1 D.

Substrate standing part 108 is connected in by rotating shaft and supports the end of part 102 by the bearing 104 axial rotating shafts of rotatably supporting 106.The other end of rotating shaft 106 is connected in drive source 114.For example motor is suitable for as drive source 114.In separation process, bonded substrate stack 101 is driven the revolving force rotation of sending in source 114.Drive source 114 is rotating shaft 106 with the rotary speed of determining according to the order that comes the self-controller (not shown).

On the other hand, substrate standing part 109 is connected in by rotating shaft and supports the end of part 103 by the bearing 105 axial rotating shafts of rotatably supporting 107.The other end of rotating shaft 107 is connected in drive source 115.For example motor is suitable for as drive source 115.In separation process, bonded substrate stack 101 is driven the revolving force rotation of sending in source 115.Drive source 115 according to the order that comes the self-controller (not shown) and with rotating shaft 106 rotating shaft 107

synchronously.Rotating shaft

106 and 107 is rotated synchronously with one another to prevent bonded substrate stack 101 distortions.

Independently drive source can be connected to

rotating shaft

106 and 107 as mentioned above.But adopt single drive source, the revolving force that drive source produces can be distributed to rotating shaft 106 and 107.At this moment,

rotating shaft

106 and 107 can rotation easily synchronized with each other.

As an alternative, can only drive in

rotating shaft

106 and 107 one.For example, when only arranging to be used for driving the drive source 114 of rotating shaft 106, before bonded substrate stack 101 was separated, rotating shaft 106, substrate standing part 108, bonded substrate stack 101, substrate standing part 109 and rotating shaft 107 were rotated together.When bonded substrate stack 101 was separated into two substrates, the member on rotating shaft 107 sides stopped the rotation.

Rotating shaft on rotating shaft 107 sides supports part 103 to have to be used for the spring 111 of para-linkage substrate stack 101 pressurizations.Therefore, bonded substrate stack 101 is subjected to being pressed towards along substrate 101a the power of the direction (negative direction of X-axis) of substrate 101c.As a result, after bonded substrate stack 101 was separated into two

substrate

101a and 101c by the jet from nozzle 110, even two

substrate

101a and 101c are not held by

substrate standing part

109 and 108 vacuum respectively,

substrate

101a and 101c can not fall yet.

In this embodiment, spring 111 applies the power that is pressed towards the direction (negative direction of X-axis) of substrate 101c along substrate 101a.But by means of the position that changes spring, this power also can be applied by the direction of separating from substrate 101c along substrate 101a.At this moment, when bonded substrate stack 101 physically was separated into two

substrate

101a and 101c by the jet from nozzle 110, substrate 101a just separated from substrate 101c.

Separator 100 has the adjusting mechanism that is used for adjusting the spacing between substrate standing part 108 and 109.The object lesson of adjusting mechanism is described below.

Fig. 8 shows first kind of arrangement of adjusting mechanism.Adjusting mechanism shown in Figure 8 uses cylinder 122.Cylinder 122 is fixed in rotating shaft supports part 103.When piston rod 121 was contracted (driving), drive source (for example motor) 115 was pulled.When the driving of piston rod 121 was undone, the power of spring 111 can act in the rotating shaft 107 to pressurize to substrate.

Fig. 9 shows second kind of arrangement of adjusting mechanism.Adjusting mechanism shown in Figure 9 uses eccentric cam 131 and motor.Eccentric cam 131 is connected in the motor (not shown).Adjust spacing between

substrate standing part

108 and 109 by means of moving the drive plate 132 be connected in drive source 115 rear ends.The power of spring 111 along the directive effect of substrate pressurized in rotating shaft 107.Be separated into two substrates for fixing bonded substrate stack 101 and with it, eccentric cam 131 is along cancelling its direction to the restriction of drive plate 132, that is rotates along the direction that forms the gap between eccentric cam 131 and drive plate 132.With this operation, the pressure of spring 111 can act on the bonded substrate stack 101.

Even arrange to replace spring 111, also need to be used for adjusting the adjusting mechanism of the spacing between

substrate standing part

108 and 109 along the spring of bonded substrate stack 101 tension directive effects.At this moment, adjusting mechanism is used to push away substrate standing part 109, until contacting with bonded substrate stack 101, so that bonded substrate stack 101 is held on the substrate support surface of substrate standing part 109.

Separator 100 has and is used for

rotating shaft

112 and 113 drive sources (for example motor) 151 and 161 with rotation

substrate control section

150 and 160 respectively.Drive

source

151 and 161 is fixed in for example main body frame of separator 100.

As shown in Figure 3, in separator 100,

substrate control section

150 and 160 can be by means of

drive source

151 and 161 and 112 and 113 rotations around the shaft, make substrate standing part 108 become level with 109 substrate support surface respectively or become vertical.

Can arrange a single drive source to replace being respectively

substrate control section

150 and 160 and prepare two drive sources.At this moment, the output of drive source is assigned to drive

substrate control section

150 and 160.

In separator 100, when bonded substrate stack 101 was clipped in the middle (vertically supporting) by

substrate standing part

108 and 109,

rotating shaft

112 and 113 was positioned at outside, outstanding vertically bonded substrate stack 101 formed spaces (outstanding space).In addition,

rotating shaft

112 and 113 is arranged along the direction (Y direction) of the substrate support surface that is parallel to substrate standing part 108 and 109.Therefore,

substrate control section

150 and 160 work are not disturbed mutually, and bonded substrate stack 101 is not damaged separated

substrate

101a and 101c.

Even rotating

shaft

112 and 113 is positioned at outstanding space,, also can avoid the interference between

substrate control section

150 and 160 by means of strengthening the backway of substrate standing part 109 to rotating shaft support part 103 sides.

The series of steps of separating bonded substrate stack with separator 100 is described below.

At first, as shown in Figure 3, drive

substrate control sections

150 and 160, make substrate standing part 108 become level respectively with 109 substrate support surface with drive source 151 and 161.As shown in Figure 3, with the adjusting mechanism shown in Fig. 8 or 9 substrate standing part 109 being withdrawn into rotating shaft supports in the part 103.At this moment, bonded substrate stack 101 is installed on the substrate standing part 108, and the pressure among the reduction groove 108a is so that hold bonded substrate stack 101 on the substrate support surface.Bonded substrate stack 101 preferably is mounted to the center that makes bonded substrate stack on substrate standing part 108 consistent with the center of substrate standing part 108.

Then, as shown in Figure 4,, make substrate standing part 108 become vertical respectively with 109 substrate support surface with

drive source

151 and 161 rotation

substrate control sections

150 and 160.

As shown in Figure 5, substrate standing part 109 is supported part 103 to push open by the effect of spring 111 from rotating shaft, so bonded substrate stack 101 is by 109 pressurizations of substrate standing part.When the arrangement shown in employing Fig. 8 or 9, the restriction by means of cancelling cylinder 122 or eccentric cam 131 countershafts 107 can realize this operation.

At this moment, bonded substrate stack 101 can be held by one or two vacuum in substrate standing part 108 and 109.When the pressure of spring 111 is enough, can only the needing no vacuum sucker fixes bonded substrate stack 101 with pressure.

Then, simultaneous

operation drive source

114 and 115 is with rotation bonded substrate stack 101.Jet media (for example water) is compressed and be fed to nozzle 110 with the high-pressure pump (not shown), so that vertically jet is injected among the porous layer 101b as the Disengagement zone of bonded substrate stack 101.When the situation of rotation bonded substrate stack 101 is made a bet into jet, bonded substrate stack 101 is separated into two

substrate

101a and 101c.

After bonded substrate stack 101 physically is separated into two substrates, as shown in Figure 6, with the adjusting mechanism shown in Fig. 8 or 9

substrate standing part

108 and 109 is returned to rotating shaft and support part 103 sides.Use this operation, two substrate 101a that physically separate and 101c are by apart.When

substrate

101a and 101c are not held by

substrate standing part

109 and 108 respectively, in the process of separating bonded substrate stack 101, before substrate standing part 109 returns to rotating shaft support part 103 sides, need

hold substrate

101a and 101c with

substrate standing part

109 and 108 respectively.

As shown in Figure 7, make

substrate control section

150 and 160 112 and 113 rotations around the shaft, make substrate standing part 108 become level respectively with 109 substrate support surface with drive source 151 and 161.

Substrate

101a and 101c are by horizontal fixed.

When executing separation process with liquid as jet media, jet media is stayed on separated the substrate 101a and 101c.Preferably remove the jet media that sticks on substrate 101a and the 101c with dry substrate (Rotary drying) by means of rotate

substrate standing part

108 and 109 respectively with drive source 114 and 115.For Rotary drying, be preferably in and insert a barricade that is used for shielding the jet media scattering between two

substrate control sections

150 and 160.

Substrate

101a and 101c can be sent to and go to carry out drying in another drying device.When one of substrate will be scrapped, it is dry that the substrate that scrap is not necessarily wanted.

As mentioned above, separator 100 is carried out separation process under the situation of vertical fixing bonded substrate stack.An one reason is that the track of jet is owing to gravity is bent downwardly when not vertically during jetting stream, and this just is difficult to jet is injected into the desirable position (Disengagement zone) of bonded substrate stack.Another reason is, when the release surface (porous layer) of bonded substrate stack when being parallel to jet direction, jet can act on the release surface effectively, so can improve the efficient of separation process.

According to separator 100 with

substrate control section

150 and 160, can under the situation of vertical fixing bonded substrate stack 101, carry out separation process, in addition, bonded substrate stack can be sent to separator under level, and can receive separated substrate in level.Owing in the substrate transport process, can support substrate, so can reduce the danger that substrate falls from downside.On the other hand, as if the mechanism that receives separated substrate under mechanism that under the employing plumbness bonded substrate stack is sent to separator or the plumbness, then substrate may fall.

In addition, according to this separator, when the substrate support surface of

substrate standing part

108 and 109 is configured to level, on the substrate support surface, can guarantee wide space.This has just made things convenient for the transmission or the reception of substrate.

[second kind of arrangement of separator]

Present embodiment relates to the automatic separating apparatus of separator 100 that combination has first kind of arrangement, and it automatically carries out a series of operation: take out the bonded substrate stack that is stored in the wafer case, send it to separator 100, in separator 100, separate bonded substrate stack 101 and with separated substrate stores in another wafer case.

Figure 10-13 schematic diagram has illustrated second kind of arrangement of automatic separating apparatus.Or rather, Figure 10 plane graph schematically shows bonded substrate stack 101 and is positioned in state in the separator 100, Figure 11 is the side view of arrangement shown in Figure 10, the state that Figure 12 plane graph schematically shows bonded substrate stack will separate the time, and Figure 13 is the side view of arrangement shown in Figure 12.

The automatic separating apparatus of present embodiment comprises the separator 100 of first kind of arrangement and is used for transmitting bonded substrate stack and the conveyer 500 of separated substrate.

Separator 100 preferably is placed in the operating room 400, and settles a gate 503 between operating room 400 and conveyer 500.When bonded substrate stack 101 will be placed in maybe will take out separated substrate in the separator 100 time, gate 503 is preferably opened, and preferably closes in separation process.Use this arrangement, can prevent jet media (for example water) 400 scatterings from the operating room in separation process.

Conveyer 500 comprises the transfer robot 501 that is used for transmitting bonded substrate stack 101 and separated substrate and is used for making the positioning unit 507 of bonded substrate stack 101 with respect to substrate standing part 108 location.

In order to carry out separation process, the negative crystal film magazine 505 and 506 that stores the wafer case 504 of one or more bonded substrate stack 101 and be used for storing separated

substrate

101a and 101c is placed in pre-position in the conveyer 500.Wafer case 504 be positioned to make bonded substrate stack by fixing and opening portion flatly towards transfer robot 501.Wafer case 505 and 506 be positioned to separated substrate can be stored under level and its opening portion towards transfer robot 501.

The formality of carrying out separation process with automatic separating apparatus is described below.

The staff will store the wafer case 504 of bonded substrate stack 101 and negative crystal film magazine 505 and 506 and be placed in pre-position in the conveyer 500.When the staff began separation process by the order of control panel (not shown), automatic separating apparatus just began following a series of process operations.

At first, shown in Figure 10 and 11, separator 100 rotation

substrate control sections

150 and 160 make the substrate support surface become level.

The mechanical arm 502 that transfer robot 501 will have a sucking disc mechanism is inserted into corresponding bonded substrate stack 101 belows in the wafer case 504, the lower surface of bonded substrate stack held, and mobile bonded substrate stack 101.

Transfer robot 501 is installed in the bonded substrate stack 101 that holds on the support table top of positioning unit 507 and cancels suction.Positioning unit 507 utilizes two director elements respect to one another that the center of bonded substrate stack 101 is aimed at the reference position.Transfer robot 501 holds the lower surface that positioning unit 507 is supported the bonded substrate stack 101 on the table top, mechanical arm 502 is stretched to the substrate standing part 108 of separator 100, and bonded substrate stack 101 is placed in pre-position on the substrate standing part 108.By means of positioning unit 507, can be with bonded substrate stack 101 with respect to substrate standing part 108 location.

When transfer robot 501 will be placed in bonded substrate stack 101 on the substrate standing part 108, gate 503 was opened.

By means of each bonded substrate stack 101 being positioned, each bonded substrate stack 101 can be placed in the proper position on the substrate standing part 108 with positioning unit 507.Because the center of bonded substrate stack 101 can be consistent with the central shaft of rotating shaft 106, thus bonded substrate stack 101 be rotated with separating process in, the distance between nozzle 110 and bonded substrate stack 101 side surfaces remains unchanged.Therefore, jet is acted on equably along the whole periphery of bonded substrate stack 101.

When finishing the arrangement of bonded substrate stack 101 on substrate standing part 108, transfer robot 501 makes mechanical arm 502 withdrawals, and closed shutter 503 then.

In separator 100, with

drive source

151 and 161 rotation

substrate control sections

150 and 160, make 101 one-tenth of bonded substrate stack vertical respectively, being clipped in the middle bonded substrate stack 101 also with

substrate standing part

108 and 109 again, vacuum holds.

Separator 100 is carried out separation process.More particularly, in separator 100, bonded substrate stack 101 is driven source 114 and 115 ' rotation, simultaneously, and from nozzle 110 jetting streams and be injected into the Disengagement zone (porous region 101b) of bonded substrate stack 101.Use this separation process, bonded substrate stack 101 is separated into two substrate 101a and 101c.Drive source 115 ' not only comprises above-mentioned drive source 115, and comprises the adjusting mechanism shown in Fig. 8 or 9.

When bonded substrate stack 101 was separated into two

substrate

101a and 101c, the above-mentioned adjusting mechanism of separator 100 usefulness separated two substrate 101a and 101c.Then, with

drive source

151 and 161 rotation

substrate control sections

150 and 160, make the substrate support sector of

substrate standing part

108 and 109 be divided into level respectively.

By means of using drive source 114 and 115 ' high speed rotating

substrate standing part

108 and 109, the jet media that sticks on the separated substrate is eliminated (Rotary drying).

Then, open the sluices 503.Transfer robot 501 stretches to substrate 101c below on the substrate standing part 108 with mechanical arm 502, the stationary substrate 101c by means of holding its lower surface, and substrate 101c is stored in the wafer case 505.Use the same method, transfer robot 501 stretches to substrate 101a below on the substrate standing part 109 with mechanical arm 502, the stationary substrate 101a by means of holding its lower surface, and substrate 101a is stored in the wafer case 506.

Use said process, finished the separation process of a bonded substrate stack.Repeat said process by means of bonded substrate stack that all had not been processed, this automatic separating apparatus all bonded substrate stack in can separating wafer box 504.

According to this automatic separating apparatus, when wafer case and two negative crystal film magazines of storing bonded substrate stack are prepared and are placed in the conveyer 500, and during the command execution separation process, separation process just automatically performs, and two substrates separated and that be dried optionally are stored in two storage wafer case.

As mentioned above, even when automatically performing separation process, the arrangement that can transmit substrate under level between conveyer and separator also has tangible advantage.

The arrangement of comparing that transmits substrate under plumbness between conveyer and separator, this advantage is readily appreciated that.At this moment, unless transfer robot is sent to the substrate standing part with substrate under the situation of vertical fixing bonded substrate stack exactly, otherwise the substrate standing part is difficult to hold bonded substrate stack reliably, and bonded substrate stack may be fallen sometimes.The situation that receives substrate separated with manipulator also is like this.If the substrate fixed surface of mechanical arm inaccurately is parallel to substrate, then mechanical arm is difficult to hold reliably substrate.

[example application of separator]

As the example application of above-mentioned separator, the method for making the SOI substrate is described below with reference to Figure 1A-1E.

Preparation thickness is that 625 μ m, diameter are that 5 inches and resistivity are that the p type of 0.01 Ω cm or n type (100) monocrystalline substrate are as monocrystalline substrate 11.This monocrystalline substrate 11 is dipped into HF solution, and to carry out anodic oxidation be the porous silicon layer 12 (Figure 1A) of 12 μ m to form thickness.Anodic oxidation condition is as follows.

Current density	????????7mA/cm ²
Current density	????????7mA/cm ²	Anodic oxidation solution	?HF∶H ₂O∶C ₂H ₅OH＝1∶1∶1
Processing time	????????11min	Anodic oxidation solution	?HF∶H ₂O∶C ₂H ₅OH＝1∶1∶1

This substrate is heated to 400 ℃ in oxygen atmosphere, to its oxidation 1 hour.Use this process, the inwall in the hole in the porous silicon layer 12 is covered by heat oxide film.Then, be the monocrystalline silicon layer 13 of 0.3 μ m with CVD method epitaxial growth thickness on porous silicon layer 12.The epitaxial growth condition is as follows.Before this process, can in the nitrogen atmosphere of epitaxial furnace, cure substrate.

Source gas	?????SiH ₄
Source gas	?????SiH ₄	Carrier gas	??????H ₂
Temperature	?????850℃	Carrier gas	??????H ₂
Temperature	?????850℃	Pressure	???1×10 _-2Torr
Growth rate	???3.3nm/sec	Pressure	???1×10 _-2Torr

Making thickness on monocrystalline silicon layer (silicon epitaxial layers) 13 is the SiO of 0.2 μ m ₂Layer 15 (Figure 1B).Prepare monocrystalline substrate 20 in addition.Silicon dioxide layer 15 and monocrystalline substrate 20 are in contact with one another.Then, under 1100 ℃ of temperature, carry out 1 hour heat treatment so that two substrates of bonding (Fig. 1 C).

Be stored in this bonded substrate stack in the wafer case 504 and be arranged in the conveyer 500 of automatic separating apparatus of second kind of arrangement, and carry out separation process (Fig. 1 D).Pure water is used as jet media.The diameter of jet is set to 0.2mm, and the pressure of the water of injection is set at 350Kgf/cm ²The fixed-site of jet nozzle is being carried out separation process under the situation above next-door neighbour's bonded interface.Bonded substrate stack is with the speed rotation of about 8rpm.

Most of bonded substrate stack are just separated after approximately changeing 5 circles fully.But consider the difference between the substrate, automatic separating apparatus is set in the about 2 minutes situation of rotation bonded substrate stack and makes a bet into jet.

Even after bonded substrate stack is separated into two substrates, because the effect of spring 111, two substrates still are in contact with one another.After the bonded substrate stack separation process began to carry out the scheduled time, a substrate standing part 109 was withdrawn into rotating shaft support part 103 sides so that separate two substrates that physically separated on the space.This substrate does not have crackle, breaks or damages.

Separate and be stored in substrate in the wafer case 505 (10 "+20) being removed, and use HF/H ₂O ₂/ H ₂O base corrosive agent is the porous silicon layer on the corrosion surface optionally.Because the corrosion rate of monocrystalline silicon is very low, so use for reality, the porous silicon layer of side can be ignored under the etching extent ratio of monocrystalline substrate.Use this corrosion process, can on silicon dioxide film 15, make and have the SOI substrate (Fig. 1 E) that thickness is about the monocrystalline silicon layer 13 of 0.2 μ m.

Verified, the surface of the SOI substrate that obtains, that is the surface of monocrystalline silicon layer 13 does not have defective.With transmission electron microscope the observation that the section of monocrystalline silicon layer 13 carries out is shown, do not increase crystal defect etc. in the operation after epitaxial growth, kept satisfied crystallinity.

If on monocrystalline silicon layer (epitaxial loayer) 13 side surfaces, do not make silicon dioxide film, even when 1) not on monocrystalline silicon layer 13 side surfaces and on the monocrystalline substrate side of making separately, make silicon dioxide film, or 2) all make silicon dioxide film in monocrystalline silicon layer 13 sides with on the two surface of the monocrystalline substrate side of making in addition, also can make satisfied soi structure.

By means of removing lip-deep porous silicon layer and the surface being flattened, the substrate (monocrystalline substrate 11) that is manufactured with porous silicon layer on it can be used as first or second substrate once more.

As most preferred embodiment of the present invention, the substrate separation apparatus and method that are suitable for making the SOI substrate described above.Separator of the present invention and method also can be used for separating or cut any other member.Member to be separated preferably has the porous layer as frangible Disengagement zone.

According to the present invention, can reduce the danger that the member of substrate and so on for example falls.

The present invention is not limited to the various embodiments described above, can make various changes and correction within design of the present invention and scope.Therefore, in order to declare scope of the present invention, the following claim of special proposition.

Claims

1. one kind is used for the separator of separating member, and it comprises:

Be used for changing the control device of member first type surface direction; And

Come the separator of separating member with fluid stream,

Wherein said control device has the function of the control member first type surface direction function consistent with first direction and control member first type surface direction and second direction unanimity.

2. according to the device of claim 1, wherein said control device receives its first type surface direction member consistent with first direction, make the first type surface direction consistent with second direction, and member is moved to described separator can be to its position that processes, and make the direction of first type surface of at least one member that is separated by described separator consistent with first direction.

3. according to the device of claim 1, wherein said control device receives its first type surface direction member consistent with first direction, make the first type surface direction consistent with second direction, and member is moved to described separator can be to its position that processes, and make the direction of first type surface of the member that is separated by described separator consistent with first direction.

4. according to any one device among the claim 1-3, first direction and second direction perpendicular each other wherein.

5. according to any one device among the claim 1-4, wherein first direction is the direction that the member first type surface is in level basically.

6. according to any one device among the claim 1-4, member wherein to be processed comprises planar plate members, and described separator cuts planar plate members along in-plane, thereby this member is separated into two planar plate members.

7. according to the device of claim 6, wherein second direction is that the member first type surface is in vertical direction basically, and described separator vertically sprays a fluid into planar plate members, thereby planar plate members is separated into two planar plate members.

8. according to the device of claim 7, wherein first direction is the direction that the planar plate members first type surface is in level basically.

9. according to any one device among the claim 6-8, wherein said control device comprises and a pair ofly from two face side planar plate members is clipped in the middle and the fixture of fixed flat planar member when described separator separating plate member.

10. according to the device of claim 9, wherein each described fixture comprises the Acetabula device that is used for holding planar plate members.

11. device according to claim 10, wherein said control device comprises at least one whirligig around the rotating shaft rotation of the chuck surface that is parallel to described Acetabula device that is used for making in the described a pair of fixture, and changes the direction of planar plate members first type surface with described whirligig.

12. device according to claim 10, wherein said control device comprises and is used for making the whirligig of described a pair of fixture around the rotating shaft rotation of the chuck surface that is parallel to described Acetabula device, and changes the direction of planar plate members first type surface with described whirligig.

13., wherein be placed in the position of described a pair of fixture non-interference as the rotating shaft of described fixture pivot according to the device of claim 11 or 12.

14., also comprise and be used for making member to wind whirligig perpendicular to the rotating shaft rotation of first type surface according to any one device among the claim 1-13.

15. according to the device of claim 14, wherein said whirligig is used for making the device of member rotation when being included in described separator separating member.

16. according to the device of claim 14 or 15, wherein said separator comes separating member with flow of liquid, and described whirligig comprises and be used for making at least one member rotation that is separated by described separator, so that remove the device that sticks to the liquid on the member.

17., also comprise at least one that be used for making described a pair of fixture and wind whirligig perpendicular to the rotating shaft rotation of fixed surface according to any one device among the claim 9-13.

18. according to the device of claim 17, wherein said whirligig makes described fixture rotation when described separator separating member.

19. device according to claim 17 or 18, wherein said separator comes separating member with flow of liquid, and at member by described separator after separating, described whirligig makes the rotation of described fixture, so that remove the liquid that sticks to by on the fixing member of described fixture.

20., also comprise the operating room that is used for covering described device according to any one device among the claim 1-19.

21. according to the device of claim 20, wherein said operating room has can open/close gate.

22. device according to claim 21, also comprise the conveyer that is used for that member to be processed is sent to described control device and receives separated member from described control device, described conveyer is positioned in outside, described operating room, and member is sent to described control device under the situation that gate is opened or from described control device receiving member.

23. according to the device of claim 21 or 22, wherein said gate is closed when member is separated by described separator at least.

24., also comprise and be used for making member to be processed with respect to described control device positioning means for positioning according to the device of claim 22 or 23.

25. according to any one device among the claim 1-24, member wherein to be separated has the frangible layer as separating layer, and frangible layer is arranged essentially parallel to the first type surface of member.

26. a processing unit (plant) that is used for tool member, it comprises:

Be used for changing the control device of member first type surface direction;

Be used for making member to wind the whirligig that rotates perpendicular to the rotating shaft of first type surface; And

Be used for the processing unit (plant) under the situation of described whirligig rotating member, member processed,

Wherein said control device receives its first type surface direction member consistent with first direction, make the first type surface direction consistent with second direction, and member is moved to described processing unit (plant) can be to its position that processes, and make consistent with first direction by the first type surface direction of the finished member of described processing unit (plant).

27. according to the device of claim 26, first direction and second direction perpendicular each other wherein.

28. according to the device of claim 26 or 27, wherein first direction is the direction that the member first type surface is in level basically.

29. according to any one device among the claim 26-28, wherein said processing unit (plant) comes tool member with liquid, and after member is by the processing of described processing unit (plant), described whirligig makes the member rotation stick to liquid on the member with removing.

30. a processing unit (plant) that is used for tool member, it comprises:

Be used for fixing the fixture of member;

Be used for changing the control device of direction of the fixed surface of described fixture;

Be used for processing unit (plant) that the member that described fixture is fixed is processed; And

Just be used at described processing unit (plant) in tool member and/or make when having processed member the fixing member of described fixture wind whirligig perpendicular to the rotating shaft rotation of fixed surface,

When wherein said control device will receive member to be processed in described fixture, make the direction of fixed surface consistent with first direction, after described fixture receives and secures member, make the direction of fixed surface of described fixture consistent with second direction, and described fixture moved to the position that described processing unit (plant) can be processed member, and after finishing processing, make the direction of fixed surface of described fixture consistent with first direction with described processing unit (plant).

31. according to the device of claim 30, first direction and second direction perpendicular each other wherein.

32. according to the device of claim 30 or 31, wherein first direction is the direction that the member first type surface is in level basically.

33. according to this any one device of claim 30-32, wherein said processing unit (plant) comes tool member with liquid, and after member is by the processing of described processing unit (plant), described whirligig makes the member rotation stick to liquid on the member with removing.

34. the separation method of a separating member, it comprises:

Receive the receiving step of its first type surface direction member consistent with first direction;

Make the first type surface direction controlled step consistent of member with second direction; And

With the separating step of fluid flow point from member.

35., also comprise direction second controlled step consistent of the first type surface that makes at least one separated in separating step member with first direction according to the method for claim 34.

36., also comprise direction second controlled step consistent of the first type surface that makes member separated in separating step with first direction according to the method for claim 34.

37. according to any one method among the claim 34-36, first direction and second direction perpendicular each other wherein.

38. according to any one method among the claim 34-37, wherein first direction is the direction that the member first type surface is in level basically.

39. according to any one method among the claim 34-36, member wherein to be processed comprises planar plate members, and separating step comprises along in-plane cutting planar plate members, thereby this member is separated into two planar plate members.

40. according to the method for claim 39, wherein second direction is that the member first type surface is in vertical direction basically, and separating step comprises and vertically spray a fluid into planar plate members, thereby planar plate members is separated into two planar plate members.

41. according to the method for claim 40, wherein first direction is the direction that the planar plate members first type surface is in level basically.

42. according to any one method among the claim 39-41, wherein separating step comprises from two face side member is clipped in the middle and the fixed flat planar member.

43. according to any one method among the claim 34-42, wherein separating step is included in member to be processed is wound under the situation of rotating perpendicular to the rotating shaft of first type surface, comes separating member with fluid stream.

44. according to any one method among the claim 34-43, wherein separating step comprises and uses the fluid separation applications member, and the method also comprises, after member is separated in separating step, at least rotate a member of separated mistake, so that remove the liquid that sticks on the member.

45., wherein in the operating room, carry out separating step in case the fluid stopping volume scattering according to any one method among the claim 34-44.

46. according to any one method among the claim 34-45, member wherein to be processed has the frangible layer as separating layer, and frangible layer is arranged essentially parallel to the first type surface of member.

47. according to the method for claim 46, wherein frangible layer comprises porous layer.

48. according to the method for claim 46, wherein frangible layer comprises the layer with microvoid hole.

49. according to the method for claim 46, wherein the method with at least two planar plate members of bonding prepares member to be processed, and at least one comprises Semiconductor substrate in two planar plate members.

50. according to the method for claim 49, wherein Semiconductor substrate comprises monocrystalline substrate.

51. according to the method for claim 46, wherein the method with at least two planar plate members of bonding prepares member to be processed, and at least one comprises dielectric substrate in two planar plate members.

52. according to the method for claim 51, wherein dielectric substrate comprises quartz substrate.

53. according to the method for claim 46, wherein the method with at least two planar plate members of bonding prepares member to be processed, and at least one comprises transparent substrates in two planar plate members.

54., wherein prepare member to be processed via the method that non-porous layer is bonded to second substrate with first substrate that will inwardly have non-porous layer and porous layer in succession from the surface according to the method for claim 47.

55. according to the method for claim 54, wherein non-porous layer has monocrystalline silicon layer.

56. according to the method for claim 55, wherein non-porous layer has the insulating barrier on the monocrystalline silicon layer.

57. according to the method for claim 56, wherein insulating barrier is made by silica.

58. according to the method for claim 54, wherein second substrate comprises dielectric substrate.

59. according to the method for claim 54, wherein second substrate comprises transparent substrates.

60. according to the method for claim 54, wherein second substrate comprises quartz substrate.

61. according to any one method among the claim 54-60, wherein the porous layer utilization is carried out anodised method to monocrystalline substrate and is made.

62. according to the method for claim 48, wherein using has the method on surface of first substrate of microvoid hole layer to prepare member to be processed to combination second substrate bonding.

63., wherein use the method that ion is injected among the monocrystalline substrate to prepare microvoid hole layer according to the method for claim 62.

64. according to any one method among the claim 34-63, wherein water is as fluid.

65. the manufacture method of a Semiconductor substrate, it comprises the following step:

The preparation combination has first substrate of porous layer or microvoid hole layer;

With first substrate bonding to second substrate with the preparation bonded substrate stack;

With any one separation method among the claim 34-45, as the Disengagement zone, bonded substrate stack is separated into first substrate side and second substrate side with porous layer or microvoid hole layer; And

Porous layer or the microvoid hole layer on second substrate side stayed in removing.

66. according to the method for claim 65, also be included in bonded substrate stack separated after, remove the porous layer stay on first substrate side or microvoid hole layer so that reuse the step of first substrate.

67., wherein use and Semiconductor substrate is carried out anodised method make porous layer according to the method for claim 65.

68., wherein be used in the method for injecting ion in the Semiconductor substrate and make microvoid hole layer according to the method for claim 65.

69. Semiconductor substrate of making of any one method among the claim 65-68.