CN1219614A - Method and installation for GaN growth by light radiation-heated metallic organic chemical gas-state deposition - Google Patents
Method and installation for GaN growth by light radiation-heated metallic organic chemical gas-state deposition Download PDFInfo
- Publication number
- CN1219614A CN1219614A CN98111554.3A CN98111554A CN1219614A CN 1219614 A CN1219614 A CN 1219614A CN 98111554 A CN98111554 A CN 98111554A CN 1219614 A CN1219614 A CN 1219614A
- Authority
- CN
- China
- Prior art keywords
- gan
- substrate
- growth
- epitaxial film
- atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 22
- 230000012010 growth Effects 0.000 title claims description 30
- 239000000126 substance Substances 0.000 title description 2
- 230000008021 deposition Effects 0.000 title 1
- 238000009434 installation Methods 0.000 title 1
- 238000010438 heat treatment Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 230000005855 radiation Effects 0.000 claims abstract description 21
- 239000010453 quartz Substances 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000012298 atmosphere Substances 0.000 claims abstract description 12
- AEEAZFQPYUMBPY-UHFFFAOYSA-N [I].[W] Chemical compound [I].[W] AEEAZFQPYUMBPY-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims abstract description 9
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 6
- 239000010980 sapphire Substances 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 230000003287 optical effect Effects 0.000 claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 9
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000004176 ammonification Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000000354 decomposition reaction Methods 0.000 abstract description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 87
- 229910002601 GaN Inorganic materials 0.000 description 84
- 239000010408 film Substances 0.000 description 30
- 239000000463 material Substances 0.000 description 28
- 238000002360 preparation method Methods 0.000 description 12
- 201000005630 leukorrhea Diseases 0.000 description 9
- 206010046901 vaginal discharge Diseases 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000002950 deficient Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 238000001534 heteroepitaxy Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000103 photoluminescence spectrum Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 230000018199 S phase Effects 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- KWYKSRAECRPMIS-UHFFFAOYSA-N azane;hydrazine Chemical compound N.NN KWYKSRAECRPMIS-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- -1 organo indium Chemical compound 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 238000000628 photoluminescence spectroscopy Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Images
Abstract
A process for growing GaN includes such technological steps as cleaning the surface of alpha-Al2O3 (sapphire) substrate, putting the substrate into quartz reactor of iodine-tungsten lamp radiation heating sytsem, vacuumizing, high-temp. annealing under H2 atmosphere, introducing TMG and NH3 to grow GaN buffer layer, and grow GaN epitaxial layer. As the light radiation promotes the decomposition of NH3 moleculae, the N vacancies in epitaxial GaN layer is suppressed so as to obtain nearly perfect monocrystal.
Description
The present invention relates to the method and apparatus of a kind of growing gallium nitride (GaN) material, relate in particular to the growth method and the device that utilize light radiation-heated metallic organic chemistry vapour phase deposit gallium nitride material.
III-V group nitride material (claiming the GaN sill again) based on GaN and InGaN, AlGaN alloy material is the novel semiconductor material of extremely paying attention in the world in recent years.The direct band gap of its 1.9-6.2eV continuous variable, excellent physics, chemical stability, high saturated electron drift velocity, high-performances such as high breaking down field strength and high heat conductance make it become the most preferably material of short wavelength's semiconductor photoelectronic device and high frequency, high pressure, the preparation of high temperature microelectronic device.GaN base high brightness blue light-emitting diode (LED) has appearred in the end of the year 1994 first, under the room temperature during working current 20mA, and Output optical power ImW, brightness reaches 1.2Cd: release green glow, white light LEDs again, now formed the scale operation ability.Holland Philips company, U.S. Hewlett-Packard Corporation etc. also successively release GaN base blue-ray LED and realize commercialization production.December nineteen ninety-five, Japan Ri Ya company develops first GaN based multiple quantum well blue light laser diode (LD) in the world again, under the room temperature during working current 2.3A, the pulse laser of exportable 417nm, power 2.5mW.1996 end of the year, the said firm realizes room temperature continuous wave (CW) emission of GaN base blue light LD, life-span reaches more than 20 hour, and in June, 1998, the said firm announces that the emission lifetime of its GaN base blue light LD is above 6,000 hours, the extrapolation life-span surpasses 10,000 hours, estimates for the end of the year 98 and can release commodity.
At present, the main method of preparation GaN material is to adopt metal organic chemical vapor deposition (MOCVD), at sapphire (α-Al
2O
3) or silicon carbide (SiC) substrate on hetero epitaxy GaN monocrystal thin films.The GaN sill is that nature does not exist, and fully by the novel semiconductor material of artificial preparation, mainly comprises a cube phase (zincblende lattce structure) and six sides (wurtzite structure) two kinds of structure types mutually.Cubic GaN is the metastable phase on the thermodynamics, and high temperature is unstable down.Therefore, the GaN material that is used to prepare semiconducter device mainly is six side's phases.Because the saturated N of GaN
2Air pressure is very high, and people can't resemble to draw and draw the GaN single crystal material Si and the GaAs under normal condition.Even it is not the GaN crystal diameter that draws under more than 100 normal atmosphere also has only several millimeters, practical.Therefore, up till now for this reason, practical GaN material preparation method is at dissimilar materials such as α-Al
2O
3, hetero epitaxy GaN monocrystal thin films on the substrate such as SiC.The method that is used for the GaN hetero epitaxy mainly contains: radio frequency heating (RF) metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) and halide vapor phase epitaxy (HVPE).Wherein, MOCVD is effective and the most practical epitaxy direction, has the strongest industrial application background.Just because of the end of the eighties, be used for the breakthrough of the MOCVD growth technology of GaN sill growth the beginning of the nineties, just start the research boom of GaN sill and device in the world.Chinese patent CN94105603 has provided a kind of method of quick lamp heat growth Ge-Si heterojunction, but its method can not be used directly in α-Al
2O
3Growing GaN in the substrate.
Prepare in the process of GaN film at MOCVD, the Ga source of use is high-purity H
2Or N
2The metal of gas-entrained has 0 machine material such as trimethyl-gallium (TMG) or triethyl-gallium (TEG), and the N source is high-purity ammonia (NH
3).They react under up to the temperature more than 1000 ℃, at α-Al
2O
3Or form the GaN film on the substrate such as SiC.Because now oneself reaches very high level to the MOCVD technology to the control of air pressure, flow, temperature etc., add the heteroepitaxial growth technology that has adopted the buffer layer innovation, reached the level of preliminary practicability with the GaN quality of materials of MOCVD method preparation, devices such as the GaN of preparation base short wavelength LED, LD all adopt the GaN sill of MOCVD preparation at present.
Prepare the GaN epitaxial film with radio frequency heating MOCVD and still have some difficulties, mainly comprise
(1), make dislocation desity in the GaN epitaxial film up to 10 because the lattice mismatch and the thermal mismatching of GaN and substrate material add high growth temperature
9-10
10Cm
-2Magnitude.Even people have adopted methods such as selection horizontal extension technology, multi-buffering-layer technology, dislocation desity is still 10
6Cm
-2More than.
(2) owing to NH as the N source
3The ionization energy of molecule is very high, even under the growth temperature more than 1000 ℃, and NH
3The molecular breakdown rate also is lower than 1%, makes to have a large amount of N room in the GaN epitaxial film, causes the GaN sample to be intrinsic n type.
(3) owing to Zn, the ionization energy of Mg atom in the GaN forbidden band as p type doping agent reach 200meV, make that the p type doping efficiency of GaN is very low.
(4) owing to TMG and NH as the Ga source
3Will produce parasitic reaction under lower temperature, reactant is present in the GaN epitaxial film as impurity or defective.Oneself generally acknowledge it is that the luminous spectrum of GaN epitaxial film exists the major reason of " yellowish leukorrhea " this.And " yellowish leukorrhea " emission is strong more, and the quality of expression GaN material is poor more.
The existence of above difficulty has influence on and makes high-quality material and device, has also restricted further developing of growth of GaN material and device development.
Prepare the problem that the GaN epitaxial film exists in order to solve with the MOCVD method, the scientist of countries in the world has use up very big effort.In order to lower the N room in the GaN epitaxial film, people's effort can mainly ascribe two aspects to: improve the MOCVD material growing system (1), and most typical is to form plasma body with electron cyclotron resonace (ECR) to activate NH
3Molecule can improve NH greatly
3The decomposition efficiency of molecule reduces growth temperature, not only can lower the N vacancy concentration of GaN layer, and is also helpful to reducing dislocation desity.But the ECR technology itself is a very special technology, exists shortcomings such as technical sophistication, investment is big, bulky, electromagnetic interference is serious.(2) seek new N source, as adopting hydrazine organic amino sources such as (hydrazine ammonia).The effort of this respect is not success as yet, mainly is when having improved activation N source, has brought more serious parasitism anti-.
The objective of the invention is: a kind of light radiation-heated metallic organic chemistry vapour phase deposit GaN growth method is provided, improves quality of materials, propose a kind of preparation methods that can be used for device, promote further developing of growth of GaN material and device development.
The present invention also aims to provide the growing apparatus of a kind of light radiation-heated metallic organic chemistry vapour phase deposit GaN.
Technical scheme of the present invention is to set up the optical radiation that is exclusively used in the growth of GaN material epitaxy and add thermal low (MOCVD) system.In this system, comprise that employing replaces the RF radio frequency heating of generally adopting in the general MOCVD system around the tungsten-iodine lamp optical radiation heating system of quartz reactor.Establish quartz holder in the quartz reactor, be equipped with substrate and temperature measuring equipment, quartz reactor thereon and be communicated with growth source of the gas by magnetic valve and mass flowmeter control, growth source comprises trimethyl-gallium and NH
3Gas etc.The vacuum system that total system is made of machine pump and diffusion pump guarantees vacuum and keep low pressure in the growth material process.
Processing method of the present invention is: with α-Al
2O
3(sapphire) substrate carries out surface cleaning, then substrate is entered reaction chamber and vacuumizes that (vacuum should be higher than 5.0 * 10
-5Torr); Substrate is at H
2High temperature annealing under the atmosphere (1050 ℃-1100 ℃) is then at NH
3Ammonification under the atmosphere (1000 ℃-1050 ℃) feeds TMG and NH then
3Growing GaN buffer layer (500 ℃-550 ℃), growing GaN epitaxial film (900 ℃-1050 ℃); The GaN epitaxial film is at NH
3Annealing (900 ℃-1050 ℃) under the atmosphere; Sample is taken out in cooling.
Characteristics of the present invention are: characteristics such as device of the present invention has that investment is little, equipment is simple, volume is little, no electromagnetic interference, system device are reliable and stable, controls the depth height automatically, easy to operate.Adopt this growing system, at α-Al
2O
3Prepare the GaN monocrystal thin films on the substrate.Prove all that by characterizing methods such as twin crystal X ray rocking curve, photoluminescence spectrum and hall measurements the GaN epitaxial film has very high quality.Particularly the GaN layer that grows under 950 ℃ is not at room temperature observed " yellowish leukorrhea emission ".
In the process of the optical radiation heating MOCVD systems produce GaN material that the present invention sets up, at first adopt the optical radiation heating to replace general RF radio frequency heating, have good result solving the above-mentioned the 2nd and the 4th difficulty.
On GaN material preparation mechanism, the optical radiation heating has following 2 effects:
(1) optical radiation has promoted NH
3Molecular breakdown helps suppressing the N room in the GaN epitaxial film.NH
3The bond energy of N-H key is 3.676eV in the molecule, corresponding to the UV-light of wavelength 337.3mm.Fig. 3 is the tungsten-iodine lamp luminous spectrum that we test, and can see that therefrom spectrum has comprised the photon of this part energy, even more high-octane photon.Therefore, optical radiation can improve NH
3Decomposition efficiency.
(2) suppress TMG and NH
3Between parasitic reaction, promote the decomposition of parasitic reaction thing.TMG and NH
3The parasitic reaction product is generally the impurity that contains C, becomes entrained in the GaN epitaxial film, not only as the character of impurity effect GaN, and can cause other defective, as fault etc.Therefore, if the GaN growth temperature is lower than 950 ℃, when parasitic reaction was serious, it is yellow that the GaN film is.Even the sample of preparation also can be at the peak bag that forms broad on its luminous spectrum about 550nm, i.e. " yellowish leukorrhea " down for high temperature.
We adopt the light spoke heating MOCVD material growing system that designs voluntarily, sets up at α-Al
2O
3Successfully prepared the high-quality GaN monocrystal thin films on the substrate.Experimental results show that and adopt the optical radiation heating to replace the heating of RF radio frequency, obtained extraordinary effect.Particularly when 950 ℃ of growth temperatures, prepare the GaN epitaxial film of nothing " yellowish leukorrhea " emission, this is first in the world, and is relevant with the effect of optical radiation undoubtedly.And listed one group of characterization result with the GaN epitaxial film of light radiation heating MOCVD systems produce.
But under the condition of optical radiation heating, the sample of 900 ℃ of growths just presents water white transparency, and the sample of 950 ℃ of growths does not observe " yellowish leukorrhea " emission on the luminous spectrum.And, during 1050 ℃ of growth temperatures, stronger " yellowish leukorrhea " emission is arranged also abroad with the MOCVD system Grown GaN film of RF radio frequency heating.
On mechanism, this is because optical radiation has suppressed parasitic reaction, and has promoted the decomposition of parasitic reaction thing, makes in the GaN layer impurity C atom excessive, forms CH
4Gas is discharged outside the reaction chamber.Therefore, replace the heating of RF range to have certain effect with the light radiation heating to solving above-mentioned (2) and (4) individual problem.
The invention will be further described below in conjunction with accompanying drawing with by embodiment:
Fig. 1 is a system schematic of the present invention, except having the high precision control to air pressure, flow, temperature that general MOCVD system had, the characteristics of this system's maximum are high-frequency induction (RF) heating of adopting the optical radiation heating to replace general MOCVD system to adopt.
Shown in Figure 2, (Fig. 2 a), Fig. 2 b is the well heater transverse sectional view to optical heating device structural representation of the present invention.Form by 18 tungsten-iodine lamps among the figure around quartz tube reactor, every power 1KW, its emission light intensity is by the circuit of SCR control of design voluntarily, and therefore, the temperature in luminous intensity and the reactor all can be controlled automatically by computer.
Fig. 3 is tungsten-iodine lamp luminescent spectrum figure of the present invention, and the horizontal integration coordinate is a wavelength among the figure, and ordinate is represented luminous intensity, and is a relative intensity unit.
Fig. 4 (a) is α-Al of the present invention
2O
3The X-ray diffraction spectrum of GaN epitaxial film (XRD) on the substrate is positioned at the diffraction peak of 34.0 ° and 72.7 °, comes from the diffraction of GaN (0002) and (0004) crystal face respectively.In addition, without any the diffraction peak that comes from other crystal faces, illustrate that the GaN epitaxial film has only a high preferred orientation.Fig. 4 (b) is the X ray twin crystal rocking curve of GaN (0002) diffraction peak, and its halfwidth (FWHM) is 8.7 minutes (arcmin), illustrates that the GaN epitaxial film is the very complete monocrystal thin films of crystalline structure.Abscissa is an angle of diffraction among the figure, and ordinate is a relative intensity.
Fig. 5 is the transmitted light absorption spectrum of GaN epitaxial film of the present invention, and abscissa is a wavelength, and ordinate is a transmissivity, near 365nm, can see very precipitous optical absorption edge.The GaN epitaxial film energy gap of Ce Dinging is 3.4eV in view of the above, equates with the standard value of GaN energy gap under the room temperature.
Fig. 6 is the photoluminescence spectrum (PL) that GaN epitaxial film of the present invention is measured under room temperature and low temperature respectively, abscissa is a wavelength, and ordinate is a light fluorescence relative intensity, and the emission peak that is positioned at 367nm has been represented the band edge emission of GaN, its intensity is high more, illustrates that the optical quality of GaN layer is good more.Simultaneously, we do not observe " yellowish leukorrhea " emission that is positioned at about 550nm under room temperature and low temperature, illustrate that defective relevant with " yellowish leukorrhea " in the epitaxial film or impurity density are very low.PL spectrometry presentation of results GaN epitaxial film has good optical quality.Fig. 6 (a) is at room temperature measuring, and Fig. 6 (b) is for to measure under the temperature of 10K.
Material preparation method:
1. α-Al
2O
3(sapphire) shirt carries out surface cleaning
2. substrate enters to have reacted and vacuumizes that (vacuum should be higher than 5.0 * 10
-5Torr)
3. substrate is at H
2High temperature annealing under the atmosphere (1050 ℃)
4. substrate is at NH
3Ammonification under the atmosphere (1050 ℃)
5. growing GaN buffer layer (520 ℃) is connected the Ga source, with H
2TMG or TEG are taken out of,
6. annealing (900 ℃-1050 ℃ require to change temperature rise rate and annealing temperature according to outer layer growth) heats up
7. growing GaN epitaxial film
8.GaN annealing (1050 ℃) under the epitaxial film atmosphere
9. sample is taken out in cooling
The room temperature Hall (Hall) that carries out with Van der Pauw's method measure show the GaN epitaxial film at room temperature n type concentration of background carriers be 10 * 10
18Cm
-3, hall mobility is 121.5cm
2/ V.S. said structure, optics, electrical measurement result show that all the GaN epitaxial film of the optical radiation heating MOCVD growing system preparation that designs voluntarily, sets up with us is the high quality GaN monocrystal thin films.Preparing with the MOCVD method in the process of GaN sill, adopting the optical radiation heating to replace general RF radio frequency heating to obtain good result of use.All the other measuring results all provide in the drawings.
The optical radiation that is used for the growth of GaN material epitaxy that Fig. 1 and Fig. 2 are given adds thermal low (MOCVD) device, in the embodiment of this device, comprise that employing constitutes optical radiation heating system really around the tungsten-iodine lamp 2 of quartz reactor 1, replace the RF radio frequency heating generally adopted in the general MOCVD system with this.Be provided with water coolant 13 around the tungsten-iodine lamp 2, indeformable to guarantee the stainless steel body of heater.Be provided with quartz holder 3 in the quartz reactor, be equipped with substrate 4 and temperature measuring equipment 5, quartz reactor thereon and be communicated with growth source of the gas by magnetic valve 6 and mass flowmeter 7 controls, growth source comprises trimethyl-gallium 8 and NH
3Sources of the gas 9 etc. have 4 tunnel growth sources of the gas, available organo indium source, organoaluminum source etc. among Fig. 1.The vacuum system that total system is made of machine pump 10 and diffusion pump 11 guarantees vacuum and keep low pressure in the growth material process.Machine pump 10 and diffusion pump 11 expellant gas are discharged to atmosphere again through an emission-control equipment 12.The pipeline that constitutes in addition among the figure, needle-valve, tensimeter, suspended body flowmeter etc.
Claims (2)
1, the growth method of light radiation-heated metallic organic chemistry vapour phase deposit GaN is characterized in that α-Al
2O
3(sapphire) substrate carries out surface cleaning, then substrate is entered reaction chamber and vacuumizes that (vacuum is higher than 5.0 * 10
-5Torr); Substrate is at H
2High temperature annealing under the atmosphere (1050 ℃-1100 ℃) is then at NH
3Ammonification under the atmosphere (1000 ℃-1050 ℃) feeds TMG and NH then
3Growing GaN buffer layer (500 ℃-550 ℃), growing GaN epitaxial film (900 ℃-1050 ℃); The GaN epitaxial film is at NH
3Annealing (900 ℃-1050 ℃) under the atmosphere; Sample is taken out in cooling.
2, the growing apparatus of light radiation-heated metallic organic chemistry vapour phase deposit GaN, it is characterized in that comprising that employing is provided with vacuum system that water cooling system, mechanical pump and diffusion pump constitute, it is characterized in that establishing in the quartz reactor quartz holder around tungsten-iodine lamp optical radiation heating system, the tungsten-iodine lamp skin of quartz reactor, be equipped with substrate and temperature measuring equipment thereon, also comprise source of the gas that is communicated with quartz reactor and the growth source of the gas of being controlled by magnetic valve and mass flowmeter, the growth source of the gas comprises trimethyl-gallium and NH at least
3Gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98111554A CN1077607C (en) | 1998-11-03 | 1998-11-03 | Method and installation for GaN growth by light radiation-heated metallic organic chemical gas-state deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98111554A CN1077607C (en) | 1998-11-03 | 1998-11-03 | Method and installation for GaN growth by light radiation-heated metallic organic chemical gas-state deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1219614A true CN1219614A (en) | 1999-06-16 |
| CN1077607C CN1077607C (en) | 2002-01-09 |
Family
ID=5221527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN98111554A Expired - Fee Related CN1077607C (en) | 1998-11-03 | 1998-11-03 | Method and installation for GaN growth by light radiation-heated metallic organic chemical gas-state deposition |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1077607C (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1318661C (en) * | 2003-05-08 | 2007-05-30 | 住友电气工业株式会社 | III-v compound semiconductor crystal and method for production thereof |
| CN1322596C (en) * | 2003-08-29 | 2007-06-20 | 北京大学 | Growing method for nitride multi-quantum trap LED structure |
| CN100451181C (en) * | 2006-10-16 | 2009-01-14 | 中国电子科技集团公司第五十五研究所 | Method for carrying out epitaxial growth of single crystal film of nitride by using mask in situ |
| US7553368B2 (en) | 2002-05-17 | 2009-06-30 | Gallium Enterprises Pty Ltd. | Process for manufacturing a gallium rich gallium nitride film |
| CN1928152B (en) * | 2005-09-05 | 2010-12-22 | 日本派欧尼株式会社 | Vapor phase growth device |
| CN102122936A (en) * | 2011-04-08 | 2011-07-13 | 天津理工大学 | Aluminum nitride piezoelectric membrane for surface acoustic wave (SAW) device and preparation method thereof |
| CN102122938A (en) * | 2011-04-08 | 2011-07-13 | 天津理工大学 | Piezoelectric film for high-performance surface acoustic wave (SAW) device and preparation method thereof |
| US8084281B2 (en) | 2006-03-16 | 2011-12-27 | Toyoda Gosei Co., Ltd. | Semiconductor substrate, electronic device, optical device, and production methods therefor |
| CN101410557B (en) * | 2006-03-16 | 2012-02-01 | 丰田合成株式会社 | Semiconductor substrate, electronic device, optical device, and production methods therefor |
| CN103147065A (en) * | 2013-03-29 | 2013-06-12 | 天津理工大学 | Gallium nitride film for solar cell window layer and preparation method thereof |
| CN103147064A (en) * | 2013-03-29 | 2013-06-12 | 天津理工大学 | Electronic type gallium nitride (n-GaN) thin film and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0774452B2 (en) * | 1986-11-27 | 1995-08-09 | キヤノン株式会社 | Method for forming functional deposited film by photochemical vapor deposition |
| JP3353527B2 (en) * | 1995-03-24 | 2002-12-03 | 松下電器産業株式会社 | Manufacturing method of gallium nitride based semiconductor |
-
1998
- 1998-11-03 CN CN98111554A patent/CN1077607C/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7553368B2 (en) | 2002-05-17 | 2009-06-30 | Gallium Enterprises Pty Ltd. | Process for manufacturing a gallium rich gallium nitride film |
| CN1662448B (en) * | 2002-05-17 | 2010-04-28 | 盖利姆企业私人有限公司 | Process for manufacturing a gallium rich gallium nitride film |
| CN1318661C (en) * | 2003-05-08 | 2007-05-30 | 住友电气工业株式会社 | III-v compound semiconductor crystal and method for production thereof |
| CN1322596C (en) * | 2003-08-29 | 2007-06-20 | 北京大学 | Growing method for nitride multi-quantum trap LED structure |
| CN1928152B (en) * | 2005-09-05 | 2010-12-22 | 日本派欧尼株式会社 | Vapor phase growth device |
| US8084281B2 (en) | 2006-03-16 | 2011-12-27 | Toyoda Gosei Co., Ltd. | Semiconductor substrate, electronic device, optical device, and production methods therefor |
| CN101410557B (en) * | 2006-03-16 | 2012-02-01 | 丰田合成株式会社 | Semiconductor substrate, electronic device, optical device, and production methods therefor |
| CN100451181C (en) * | 2006-10-16 | 2009-01-14 | 中国电子科技集团公司第五十五研究所 | Method for carrying out epitaxial growth of single crystal film of nitride by using mask in situ |
| CN102122936A (en) * | 2011-04-08 | 2011-07-13 | 天津理工大学 | Aluminum nitride piezoelectric membrane for surface acoustic wave (SAW) device and preparation method thereof |
| CN102122938A (en) * | 2011-04-08 | 2011-07-13 | 天津理工大学 | Piezoelectric film for high-performance surface acoustic wave (SAW) device and preparation method thereof |
| CN103147065A (en) * | 2013-03-29 | 2013-06-12 | 天津理工大学 | Gallium nitride film for solar cell window layer and preparation method thereof |
| CN103147064A (en) * | 2013-03-29 | 2013-06-12 | 天津理工大学 | Electronic type gallium nitride (n-GaN) thin film and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1077607C (en) | 2002-01-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1148810C (en) | Gallium nitride monocrystal substrate and its manufacturing method | |
| US5432808A (en) | Compound semicondutor light-emitting device | |
| US6146916A (en) | Method for forming a GaN-based semiconductor light emitting device | |
| KR20070054722A (en) | A group iii-v compound semiconductor and a method for producing the same | |
| Grudowski et al. | The effect of substrate misorientation on the photoluminescence properties of GaN grown on sapphire by metalorganic chemical vapor deposition | |
| JP3198912B2 (en) | Method for producing group 3-5 compound semiconductor | |
| CN1077607C (en) | Method and installation for GaN growth by light radiation-heated metallic organic chemical gas-state deposition | |
| JP3603598B2 (en) | Method for manufacturing group 3-5 compound semiconductor | |
| Shen et al. | Growth of wurtzite GaN films on αAl2O3 substrates using light-radiation heating metal-organic chemical vapor deposition | |
| JP2012169621A (en) | METHOD FOR GROWING AlInGaN LAYER AND, OPTOELECTRONIC, PHOTOVOLTAIC AND ELECTRONIC DEVICES | |
| KR100604617B1 (en) | Manufacturing Method of Group III-V Compound Semiconductor | |
| JPH09251957A (en) | Manufacturing method for 3-5 group compound semiconductor | |
| JPH0940490A (en) | Production of gallium nitride crystal | |
| KR101026952B1 (en) | 3-5 Group compound semiconductor, process for producing the same, and compound semiconductor element using the same | |
| CN1062917C (en) | Metallic organics gaseous phase extended growth technique for In-Ga-N monocrystal film | |
| JP2000049378A (en) | Nitride semiconductor for light emitting element and its manufacture | |
| JPH09107124A (en) | Method for manufacturing iii-v compound semiconductor | |
| JP2008260682A (en) | Semiconductor element | |
| JP3339178B2 (en) | Method for producing electrode for group 3-5 compound semiconductor | |
| JPH07283436A (en) | Iii-v compound semiconductor and light-emitting element | |
| JPH09148626A (en) | Manufacture of iii-v group compound semiconductor | |
| JP2003309074A (en) | Method for manufacturing gallium aluminum nitride layer, iii nitride semiconductor light emitting element and method for manufacturing the same | |
| JP4211201B2 (en) | Sliding member for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus | |
| JPH0529653A (en) | Semiconductor device | |
| JP2004104056A (en) | Gallium-nitride-based semiconductor light emitting element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |