CN117305819A - Special gas safety control device - Google Patents
Special gas safety control device Download PDFInfo
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- CN117305819A CN117305819A CN202311269903.5A CN202311269903A CN117305819A CN 117305819 A CN117305819 A CN 117305819A CN 202311269903 A CN202311269903 A CN 202311269903A CN 117305819 A CN117305819 A CN 117305819A
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- 238000000034 method Methods 0.000 claims abstract description 89
- 230000008569 process Effects 0.000 claims abstract description 62
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims abstract description 10
- 239000006227 byproduct Substances 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 abstract description 231
- 230000006378 damage Effects 0.000 abstract description 10
- 238000013461 design Methods 0.000 abstract description 6
- 208000027418 Wounds and injury Diseases 0.000 abstract description 4
- 208000014674 injury Diseases 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 12
- 239000000126 substance Substances 0.000 description 10
- 238000012545 processing Methods 0.000 description 8
- 238000004590 computer program Methods 0.000 description 7
- 238000009835 boiling Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000007800 oxidant agent Substances 0.000 description 5
- 231100000331 toxic Toxicity 0.000 description 5
- 230000002588 toxic effect Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000002485 combustion reaction Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 231100000647 material safety data sheet Toxicity 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 206010003497 Asphyxia Diseases 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 208000009043 Chemical Burns Diseases 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 206010038776 Retching Diseases 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- YGTSMYMNDOTCEI-UHFFFAOYSA-N [W].FOF Chemical compound [W].FOF YGTSMYMNDOTCEI-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- -1 inflammable Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000009965 odorless effect Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
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- 230000000750 progressive effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910021487 silica fume Inorganic materials 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 235000019605 sweet taste sensations Nutrition 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Abstract
The embodiment of the invention provides a special gas safety control method and semiconductor process equipment, wherein the method comprises the following steps: acquiring a pressure value of the cavity; when the pressure value is larger than a preset pressure threshold value, when the second gas valve and the third gas valve are required to be opened, the first circuit is controlled to be disconnected, the second circuit and the third circuit are connected, and the first gas valve is closed, and the second gas valve and the third gas valve are opened; when the first gas valve needs to be opened, the first circuit is controlled to be closed, the second circuit and the third circuit are disconnected, and the first gas valve is opened, and the second gas valve and the third gas valve are closed. Through adding the valve interlocking into the circuit design, the first gas and the second gas and the third gas valves are not simultaneously opened respectively, so that the risk of software control failure is avoided, the generation of byproducts through chemical reaction between special gases is prevented, the damage of hardware and the injury of personnel are avoided, the potential safety hazard is avoided, and the safety of a system and personnel is protected.
Description
The application is a divisional application of patent application with the application date of 2022, 7, 29, the application number of 202210905961.1 and the invention of 'a special gas safety control method and semiconductor process equipment'.
Technical Field
The invention relates to the technical field of semiconductors, in particular to a special gas safety control method and semiconductor process equipment.
Background
CVD technique (Chemical Vapor Deposition) is a method by which substances can be plated on the surface of a substrate in the form of an atomic film. With the development of microelectronic and deep submicron chip technology, the device and material are required to be reduced in size, the aspect ratio in the device is increased, the advantages of CVD in filling are more and more obvious, and the process is more and more favored by the semiconductor industry.
One feature of the CVD process is that a variety of process gases are introduced into the chamber. When the chamber environment is ready, the process gases simultaneously enter the chamber and adhere to the wafer (wafer) where they react to form the desired film. And a vacuum pump is required to continuously pump away byproducts and residual reactants. The CVD process gas contains various special gases, such as inflammable, explosive, toxic and corrosive gases such as H 2 、WF 6 、5％B 2 H 6 /95％N 2 、NF 3 、SiH 4 。
In the prior art, the interlocking between valves is controlled by a software program according to the interlocking condition of the special gas valve, but the software has failure risk and potential safety hazard.
Disclosure of Invention
In view of the foregoing, embodiments of the present invention have been developed to provide a specialty gas safety control method and corresponding semiconductor processing apparatus that overcome, or at least partially solve, the foregoing problems.
In order to solve the above problems, an embodiment of the present invention discloses a safety control method for a special gas, which is applied to a semiconductor process device, the semiconductor process device includes: a process chamber, a control circuit; the control circuit comprises a first circuit for controlling the on-off of a valve corresponding to first gas, a second circuit for controlling the on-off of a valve corresponding to second gas and a third circuit for controlling the on-off of a valve corresponding to third gas, and the method comprises the following steps:
acquiring a pressure value of the process chamber;
when the pressure value is larger than a preset pressure threshold value, when the second gas corresponding valve and the third gas corresponding valve are required to be opened, the first circuit is controlled to be disconnected, and the second circuit is controlled to be connected with the third circuit so that the first gas corresponding valve is closed, and the second gas corresponding valve and the third gas corresponding valve are opened;
when the first gas corresponding valve needs to be opened, the first circuit is controlled to be closed, and the second circuit and the third circuit are controlled to be opened, so that the first gas corresponding valve is opened, and the second gas corresponding valve and the third gas corresponding valve are closed.
Optionally, the method further comprises:
and under the condition that the pressure value is smaller than or equal to the preset pressure threshold value, controlling the first circuit, the second circuit and the third circuit to be connected so as to open the first gas corresponding valve, the second gas corresponding valve and the third gas corresponding valve.
Optionally, the control circuit further includes: the first relay, the second relay, and the third relay, the method further comprising:
acquiring a pressure value of the process chamber, and controlling the second relay to be connected and the third relay to be disconnected through the first relay when the pressure value is larger than the preset pressure threshold value so that the second relay controls the on-off of the first circuit, the second circuit and the third circuit;
when the pressure value is smaller than or equal to the preset pressure threshold value, the first relay is used for controlling the second relay to be disconnected and the third relay to be connected, so that the third relay is used for controlling the on-off of the first circuit, the second circuit and the third circuit.
Optionally, the first relay includes a first pair of normally closed contacts and a first pair of normally open contacts; when the pressure value is greater than the preset pressure threshold, the second relay is controlled to be on and the third relay is controlled to be off through the first relay, so that the second relay controls the on-off of the first circuit, the second circuit and the third circuit, and the method comprises the following steps:
When the pressure value is larger than the preset pressure threshold value, the first pair of normally open contacts are controlled to be kept in an open state through the first relay so as to control the third relay to be opened, and the first pair of normally closed contacts are controlled to be kept in a closed state through the first relay so as to control the second relay to be turned on, so that the second relay controls the on-off of the first circuit, the second circuit and the third circuit.
Optionally, the second relay includes a second pair of normally closed contacts, a second pair of normally open contacts, and a third pair of normally open contacts; when the pressure value is greater than a preset pressure threshold, when the second gas corresponding valve and the third gas corresponding valve need to be opened, the first circuit is controlled to be disconnected, and the second circuit and the third circuit are controlled to be connected so that the first gas corresponding valve is closed, the second gas corresponding valve and the third gas corresponding valve are opened, including:
the second pair of normally-closed contacts is controlled to be opened through the second relay, the first circuit is controlled to be opened, the second pair of normally-open contacts and the third pair of normally-open contacts are controlled to be closed through the second relay, and the second circuit and the third circuit are controlled to be closed so that the first gas corresponding valve is closed, and the second gas corresponding valve and the third gas corresponding valve are opened.
Optionally, when the first gas corresponding valve needs to be opened, controlling the first circuit to be closed, and controlling the second circuit to be opened and the third circuit to be opened, so that the first gas corresponding valve is opened, the second gas corresponding valve and the third gas corresponding valve are closed, including:
the second relay is used for controlling the second pair of normally-closed contacts to keep a closed state, controlling the first circuit to be connected, and controlling the second pair of normally-open contacts and the third pair of normally-open contacts to keep an open state, and controlling the second circuit and the third circuit to be disconnected, so that the first gas corresponding valve is opened, and the second gas corresponding valve and the third gas corresponding valve are closed.
Optionally, when the pressure value is less than or equal to the preset pressure threshold, the first relay controls the second relay to be turned off and the third relay to be turned on, so that the third relay controls the on-off of the first circuit, the second circuit and the third circuit, and the method includes:
when the pressure value is smaller than or equal to the preset pressure threshold value, the first pair of normally-closed contacts are controlled to be opened through the first relay, the second relay is controlled to be opened, the first pair of normally-open contacts are controlled to be closed through the first relay, and the third relay is controlled to be closed, so that the third relay controls the on-off of the first circuit, the second circuit and the third circuit.
Optionally, the third relay includes a fourth pair of normally open contacts, a fifth pair of normally open contacts, and a sixth pair of normally open contacts; and when the pressure value is less than or equal to the preset pressure threshold value, controlling the first circuit, the second circuit and the third circuit to be connected so as to open the first gas corresponding valve, the second gas corresponding valve and the third gas corresponding valve, including:
and controlling the fourth pair of normally open contacts, the fifth pair of normally open contacts and the sixth pair of normally open contacts to be closed through the third relay, and controlling the first circuit, the second circuit and the third circuit to be connected so as to enable the first gas corresponding valve, the second gas corresponding valve and the third gas corresponding valve to be opened.
Optionally, the first gas is NF 3 The second gas is H 2 The third gas is SiH 4 。
The embodiment of the invention also discloses a semiconductor process device, which comprises: a process chamber, a control circuit; the control circuit comprises a first circuit for controlling the on-off of a valve corresponding to the first gas, a second circuit for controlling the on-off of a valve corresponding to the second gas and a third circuit for controlling the on-off of a valve corresponding to the third gas, and the semiconductor process equipment further comprises:
A controller for acquiring a pressure value of the process chamber; when the pressure value is larger than a preset pressure threshold value, when the second gas corresponding valve and the third gas corresponding valve are required to be opened, the first circuit is controlled to be disconnected, and the second circuit is controlled to be connected with the third circuit so that the first gas corresponding valve is closed, and the second gas corresponding valve and the third gas corresponding valve are opened; when the first gas corresponding valve needs to be opened, the first circuit is controlled to be closed, and the second circuit and the third circuit are controlled to be opened, so that the first gas corresponding valve is opened, and the second gas corresponding valve and the third gas corresponding valve are closed.
Optionally, the controller is further configured to control the first circuit, the second circuit, and the third circuit to be turned on when the pressure value is less than or equal to the preset pressure threshold, so that the first gas corresponding valve, the second gas corresponding valve, and the third gas corresponding valve are opened.
Optionally, the control circuit further includes: the controller is further used for acquiring a pressure value of the process chamber, and when the pressure value is larger than the preset pressure threshold value, the first relay is used for controlling the second relay to be connected and the third relay to be disconnected, so that the second relay is used for controlling the on-off of the first circuit, the second circuit and the third circuit; when the pressure value is smaller than or equal to the preset pressure threshold value, the first relay is used for controlling the second relay to be disconnected and the third relay to be connected, so that the third relay is used for controlling the on-off of the first circuit, the second circuit and the third circuit.
Optionally, the first relay includes a first pair of normally closed contacts and a first pair of normally open contacts; and the controller is used for controlling the first pair of normally open contacts to keep an open state through the first relay, controlling the third relay to be open and controlling the first pair of normally closed contacts to keep a closed state through the first relay when the pressure value is larger than a preset pressure threshold value, and controlling the second relay to be on so that the second relay controls the on-off of the first circuit, the second circuit and the third circuit.
Optionally, the second relay includes a second pair of normally closed contacts, a second pair of normally open contacts, and a third pair of normally open contacts; the controller is used for controlling the second pair of normally-closed contacts to be opened through the second relay, controlling the first circuit to be opened, controlling the second pair of normally-open contacts to be closed through the second relay and controlling the second circuit to be closed through the third pair of normally-open contacts, and controlling the second circuit to be closed through the third circuit so that the first gas corresponding valve is closed, the second gas corresponding valve is opened, and the third gas corresponding valve is opened.
Optionally, the controller is configured to control, through the second relay, the second pair of normally-closed contacts to keep a closed state, control the first circuit to be turned on, and control, through the second relay, the second pair of normally-open contacts to keep an open state, and control the second circuit to be turned off, and the third circuit to be turned off, so that the first gas corresponding valve is opened, and the second gas corresponding valve and the third gas corresponding valve are closed.
Optionally, the controller is configured to control, when the pressure value is less than or equal to the preset pressure threshold, the first pair of normally closed contacts to be opened through the first relay, the second relay to be opened, and the first pair of normally open contacts to be closed through the first relay, and the third relay to be closed, so that the third relay controls on/off of the first circuit, the second circuit and the third circuit.
Optionally, the third relay includes a fourth pair of normally open contacts, a fifth pair of normally open contacts, and a sixth pair of normally open contacts; the controller is used for controlling the fourth pair of normally open contacts, the fifth pair of normally open contacts and the sixth pair of normally open contacts to be closed through the third relay and controlling the first circuit, the second circuit and the third circuit to be connected so as to enable the first gas corresponding valve, the second gas corresponding valve and the third gas corresponding valve to be opened.
Optionally, the first gas is NF 3 The second gas is H 2 The third gas is SiH 4 。
The embodiment of the invention has the following advantages:
in the embodiment of the invention, the pressure value of the process chamber is obtained; when the pressure value is larger than a preset pressure threshold value, when the second gas corresponding valve and the third gas corresponding valve are required to be opened, the first circuit is controlled to be disconnected, and the second circuit is controlled to be connected with the third circuit so that the first gas corresponding valve is closed, and the second gas corresponding valve and the third gas corresponding valve are opened; when the first gas corresponding valve needs to be opened, the first circuit is controlled to be closed, and the second circuit and the third circuit are controlled to be opened, so that the first gas corresponding valve is opened, and the second gas corresponding valve and the third gas corresponding valve are closed. Through adding the valve interlocking into circuit design, when making process chamber pressure reach the default threshold value, first gas and second gas valve can not open simultaneously, and first gas and third gas valve can not open simultaneously to avoided the risk that software control became invalid, prevented taking place the chemical reaction between the special gas and produced the accessory product, caused the damage of hardware and injury of personnel, stopped the potential safety hazard, protection system and personnel safety.
Drawings
FIG. 1 is a flow chart of steps of a safety control method for a special gas according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of safety control of a special gas according to an embodiment of the present invention;
fig. 3 is a block diagram of a semiconductor processing apparatus according to an embodiment of the present invention.
Detailed Description
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
The embodiment of the invention takes a tungsten metal chemical vapor deposition process (CVD W process) as an example, and the CVD W process is mainly used for depositing a W metal film of 28-14nm technology generation. The special gases in the process gas used by the CVD W equipment can comprise: h 2 、WF 6 、5％B 2 H 6 /95％N 2 、NF 3 、SiH 4 . Each gas MSDS (Material Safety Data Sheet, chemical safety instructions) is as follows:
1.H 2 ：
hazard overview: hydrogen is stored in a high-pressure gas cylinder and is colorless, odorless and inflammable compressed gas. When the hydrogen content in the air is >4%, a fire or explosion may occur at any time.
Molecular weight: 2.016.
boiling point: (1 atm) -423.0F (-252.8C).
Chemical stability: stable.
Incompatibility: an oxidizing agent.
2.B 2 H 6 ：
Hazard overview: colorless, highly toxic, extremely flammable gas sold in admixture with argon, helium, hydrogen or nitrogen, which has a retching sweet taste. Inhalation or absorption through the skin can cause death.
Molecular weight: 27.67.
boiling point: (1 atmosphere) -135.1F (-92.8C).
Chemical stability: unstable.
Incompatibility: oxidizing agents, aluminum, lithium, halides and metal oxides.
3.WF 6 ：
Hazard overview: toxic, corrosive nonflammable liquefied gas, and is hydrolyzed to generate corrosive hydrofluoric acid after contacting with moisture. If inhaled or contacted with the skin, serious chemical burns can result.
Molecular weight: 297.8.
boiling point: (1 atm) 62.7F (17.2C).
Chemical stability: and (3) stability.
The reactivity is that hydrofluoric acid and tungsten oxyfluoride are generated by hydrolysis.
4.NF 3 ：
Hazard overview: toxic, nonflammable compressed gases. It is an oxidizing agent that causes or promotes the combustion of metallic and non-metallic materials.
Molecular weight: 71.0.
boiling point: (1 atmosphere) -200.3F (-129.1C).
Chemical stability: and (3) stability.
Incompatibility: oil, grease, hydrocarbon.
5.SiH 4 ：
Hazard overview: silane is a colorless, air-reactive gas that causes asphyxiation. The gas typically contacts the air causing combustion and giving off a very dense white amorphous silica fume.
Molecular weight: 32.12.
boiling point: (1 atmosphere) -169.0F (-111.7C).
Chemical stability: spontaneous combustion occurs when the material is exposed to air.
Incompatibility: air, other oxidants, and moisture.
It can be seen that in CVD W tools, the design of gas safety is an important part.
In the special gas used by the CVD W machine, H 2 SiH (SiH) 4 Has reducibility, NF 3 Is an oxidant, NF 3 The chemical bond energy of (C) is weak and not stable enough, under certain conditions, NF 3 Can be combined with H 2 The chemical reaction occurs, and the chemical equation is:
NF 3 +3H 2 ＝NH 3 +6HF
NF 3 can be combined with SiH 4 The chemical reaction occurs, and the chemical equation is:
8NF 3 +3SiH 4 ＝4N 2 +3SiF 4 +12HF
reaction product SiF 4 、NH 3 The chamber and the pipeline are polluted, and one of the reactant HF is toxic and corrosive, so that the damage of hardware and the hidden danger of safety are caused. Because the concentration of the gas is proportional to the space pressure, when the pressure of the chamber is smaller than a certain value (such as 10 Torr), the concentration of the gas is low, gas molecules are not active, chemical reaction is not easy to occur, and electrical interlocking is not needed.
When the process chamber pressure reaches a certain value (e.g., greater than 10 Torr), the chemical reaction must be prevented from occurring. Preventing NF 3 And H is 2 The valves are opened simultaneously to prevent NF 3 With SiH 4 The valve is simultaneously opened.
In the prior art, according to preset interlocking conditions, the switch of the special gas valve is controlled through software, for example, when one or more of the conditions of closing the upper cover of the chamber, ensuring that the pressure difference between the gas cabinet and the environment is greater than an alarm value, closing the gas cabinet door of the chamber and the like are not met, the special gas valve is not allowed to be opened, and leakage of the special gas into the air can be avoided; when one or more of the cooling liquid leakage alarm, the chamber over-temperature sensor alarm, the smoke sensor alarm and the like are detected, the special air valve is closed, so that the special air circulation can be forbidden in time when the abnormal condition occurs, and the occurrence of more serious harm is prevented.
While the interlocking between valves is done by software programs in current designs, the software is at risk of failure and this function needs to be added to the electrical design.
One of the core ideas of the embodiment of the invention is to provide a novel special gas valve control mode, wherein the switch of the special gas valve is controlled by a circuit, so that when the pressure of a process chamber is greater than a preset pressure threshold value, the first gas valve and the second gas valve are not opened simultaneously, and the first gas valve and the third gas valve are not opened simultaneously, thereby avoiding the risk of software control failure, preventing chemical reaction between the special gases from generating byproducts, causing damage of hardware and injury of personnel, avoiding potential safety hazards, and protecting the safety of a system and personnel.
Referring to fig. 1, a step flow chart of a special gas safety control method provided by an embodiment of the invention is shown and applied to semiconductor process equipment, wherein the semiconductor process equipment comprises: a process chamber, a control circuit; the control circuit comprises a first circuit for controlling the on-off of a valve corresponding to the first gas, a second circuit for controlling the on-off of a valve corresponding to the second gas and a third circuit for controlling the on-off of a valve corresponding to the third gas, and the method specifically comprises the following steps:
Step 101, obtaining a pressure value of the process chamber;
illustratively, in an embodiment of the present invention, a controller (PLC, programm Logic Controller) may be included in the control circuit for acquiring the pressure value signal of the process chamber and outputting a level signal to the control circuit.
In one embodiment of the present invention, the control circuit further includes: the first relay, the second relay, and the third relay, the method further comprising: acquiring a pressure value of the process chamber, and controlling the second relay to be connected and the third relay to be disconnected through the first relay when the pressure value is larger than the preset pressure threshold value so that the second relay controls the on-off of the first circuit, the second circuit and the third circuit; when the pressure value is smaller than or equal to the preset pressure threshold value, the first relay is used for controlling the second relay to be disconnected and the third relay to be connected, so that the third relay is used for controlling the on-off of the first circuit, the second circuit and the third circuit.
As an example, in the embodiment of the present invention, the on/off of the second relay and the third relay may be controlled by the first relay; and controlling the on-off of the first circuit, the second circuit and the third circuit through the second relay and/or the third relay.
For example, the PLC may transmit a control signal to the first relay to control the corresponding contacts of the first relay to close or open, thereby controlling the corresponding contacts of the second relay and the third relay to close or open. When the pressure value of the process chamber is larger than a preset pressure threshold value, the second relay can be controlled to be switched on through the first relay, and the third relay is controlled to be switched off, so that the second relay controls the on-off of the first circuit, the second circuit and the third circuit; when the pressure value is smaller than or equal to a preset pressure threshold value, the second relay can be controlled to be disconnected and the third relay can be controlled to be connected through the first relay, so that the third relay can control the on-off of the first circuit, the second circuit and the third circuit.
And 102, when the pressure value is larger than a preset pressure threshold value, controlling the first circuit to be disconnected and controlling the second circuit to be connected with the third circuit so as to enable the first gas corresponding valve to be closed and the second gas corresponding valve to be opened and the third gas corresponding valve to be opened when the second gas corresponding valve and the third gas corresponding valve are required to be opened.
The control circuit may include a first circuit, a second circuit, and a third circuit, for example. The first circuit can control the on-off of the first gas valve, the second circuit can control the on-off of the second gas valve, and the third circuit can control the on-off of the third gas valve.
For example, if the pressure value of the process chamber is greater than the preset pressure threshold, it indicates that the concentration of the special gas in the process chamber is high, and the special gas is easy to react with each other to pollute the process chamber and the pipeline. When the second gas valve and the third gas valve need to be opened, the first circuit can be controlled to be opened, and the second circuit and the third circuit can be controlled to be closed so that the first gas valve is closed, and the second gas valve and the third gas valve are opened.
In one embodiment of the invention, the first relay includes a first pair of normally closed contacts and a first pair of normally open contacts; when the pressure value is larger than the preset pressure threshold value, the first pair of normally open contacts are controlled to be kept in an open state through the first relay so as to control the third relay to be opened, and the first pair of normally closed contacts are controlled to be kept in a closed state through the first relay so as to control the second relay to be turned on, so that the second relay controls the on-off of the first circuit, the second circuit and the third circuit.
The first relay may include a first pair of normally closed contacts and a first pair of normally open contacts, for example. When the pressure value of the process chamber is larger than a preset pressure threshold value, the PLC can output a low-level signal to the first relay, the first relay receives the low-level signal, the first pair of normally open contacts can be controlled to be kept in an open state so as to enable the third relay to be opened, the first pair of normally closed contacts can be controlled to be kept in a closed state so as to enable the second relay to be connected, and the second relay can control the on-off of the first circuit, the second circuit and the third circuit under the connected state.
For example, as shown in fig. 2, a schematic diagram of safety control of a special gas provided by an embodiment of the present invention is shown, where KA01 is a first relay, KA02 is a second relay, and KA03 is a third relay; the first relay KA01 comprises a first pair of normally closed contacts 11 and 12 for controlling the on-off of the second relay KA02 and a first pair of normally open contacts 13 and 14 for controlling the on-off of the third relay KA 03. When the pressure value of the process chamber is greater than the preset pressure threshold value of 10Torr, the PLC outputs a low level to the 0 contact of the first relay KA01, at the moment, the normally open contacts 13 and 14 of the first relay KA01 are opened, the normally closed contacts 11 and 12 are closed, the third relay KA03 is opened, the second relay KA02 is closed, and at the moment, the on-off of a circuit is controlled by the KA02 relay.
In one embodiment of the invention, the second relay includes a second pair of normally closed contacts, a second pair of normally open contacts, and a third pair of normally open contacts; the second relay is used for controlling the second pair of normally-closed contacts to keep a closed state, controlling the first circuit to be connected, and controlling the second pair of normally-open contacts and the third pair of normally-open contacts to keep an open state, and controlling the second circuit and the third circuit to be disconnected, so that the first gas corresponding valve is closed, the second gas corresponding valve and the third gas corresponding valve are opened.
The second relay may include a second pair of normally closed contacts, a second pair of normally open contacts, and a third pair of normally open contacts, for example. When the pressure value of the process chamber is larger than a preset pressure threshold value, the first relay controls the second relay to be switched on and the third relay to be switched off, the second relay can keep a closed state by controlling the second pair of normally-closed contacts, controls the first circuit to be switched on, and controls the second pair of normally-open contacts and the third pair of normally-open contacts to keep a switched-off state, and controls the second circuit and the third circuit to be switched off so as to enable the first gas valve to be closed, and the second gas valve and the third gas valve to be switched on.
In one embodiment of the present invention, the first gas is NF 3 The second gas is H 2 The third gas is SiH 4 。
As an example, the first gas may be NF 3 The second gas may be H 2 The third gas may be SiH 4 。
For example, as shown in fig. 2, which is a schematic diagram of safety control of a special gas according to an embodiment of the present invention, the second relay KA02 includes a second pair of normally-closed contacts 21, 22, and NF can be controlled by controlling on/off of the first circuit 3 The on-off of the valve; comprising a second pair of normally open contacts 23, 24, which can be controlled by controlling the on-off of a second circuit to control H 2 The on-off of the valve; comprising a third pair of normally open contacts 25, 26, the SiH can be controlled by controlling the switching of a third circuit 4 And the valve is opened and closed. Under the condition that the pressure of the process chamber is greater than 10Torr, the KA02 relay is used for controlling the on-off of the circuit, and when H needs to be opened 2 、SiH 4 When in valve, PLCNF 3 And H is 2 、SiH 4 The switching signal of the valve can output a high level signal, the KA02 relay receives the high level signal and can control the contacts 23 and 24 and the contacts 25 and 26 of the KA02 to be closed and the contacts 21 and 22 to be opened, and then the H is controlled 2 Valve and SiH 4 The circuit of the valve is connected to control NF 3 The circuit of the valve is disconnected, H 2 Valve and SiH 4 The valve being allowed to open, NF 3 The valve is closed.
And 103, when the first gas corresponding valve needs to be opened, controlling the first circuit to be closed, and controlling the second circuit and the third circuit to be opened so as to open the first gas corresponding valve, and close the second gas corresponding valve and the third gas corresponding valve.
For example, if the pressure value of the process chamber is greater than the preset pressure threshold, when the first gas valve needs to be opened, the first circuit may be controlled to be closed, and the second circuit and the third circuit may be controlled to be opened, so that the first gas valve is opened, the second gas valve and the third gas valve are closed, and thus the first gas and the second gas valve are not opened at the same time, and the first gas and the third gas valve are not opened at the same time.
In one embodiment of the present invention, the second pair of normally-closed contacts is controlled to be kept in a closed state by the second relay, the first circuit is controlled to be turned on, and the second pair of normally-open contacts and the third pair of normally-open contacts are controlled to be kept in an opened state by the second relay, and the second circuit and the third circuit are controlled to be turned off, so that the first gas corresponding valve is opened, and the second gas corresponding valve and the third gas corresponding valve are closed.
Illustratively, in the event that the second relay is on, the NF is turned on when needed 3 When the valve is in the valve, the second relay can control the second pair of normally-closed contacts to keep the closed state so as to enable the first circuit to be switched on, and control the second pair of normally-open contacts and the third pair of normally-open contacts to keep the second circuit and the third circuit to be switched off so as to control the NF 3 Valve opening, H 2 Valve and SiH 4 The valve is closed.
For example, in the case of KA02 relay on, when NF needs to be turned on 3 NF of PLC when valve 3 And H is 2 、SiH 4 The switching signal of the valve can output a low-level signal, the KA02 relay receives the low-level signal, the normally open contacts 23 and 24 and the normally open contacts 25 and 26 of the KA02 can be controlled to be opened, the normally closed contacts 21 and 22 are controlled to be closed, and at the moment, the H is controlled 2 Valve and SiH 4 The circuit of the valve is disconnected to control NF 3 The circuit of the valve is connected, H 2 Valve and SiH 4 Valve closure, NF 3 The valve is allowed to open.
In one embodiment of the present invention, the first, second and third circuits are controlled to be turned on to open the first, second and third gas corresponding valves when the pressure value is less than or equal to the preset pressure threshold.
For example, if the pressure value of the process chamber is less than or equal to the preset pressure threshold, it indicates that the concentration of the special gas in the process chamber is low, the gas molecules are inactive, chemical reaction is not easy to occur, electrical interlocking is not needed, and the first circuit, the second circuit and the third circuit can be controlled to be turned on to enable NF 3 Valve, H 2 Valve and SiH 4 The valve is opened.
In one embodiment of the present invention, when the pressure value is less than or equal to the preset pressure threshold, the first pair of normally closed contacts is controlled to be opened by the first relay, the second relay is controlled to be opened, the first pair of normally open contacts is controlled to be closed by the first relay, and the third relay is controlled to be closed, so that the third relay controls the on-off of the first circuit, the second circuit and the third circuit.
For example, when the pressure value of the process chamber is less than or equal to the preset pressure threshold, the PLC may output a high level signal to the first relay, the first relay may receive the high level signal, may control the first pair of normally closed contacts to open the second relay, and control the first pair of normally open contacts to close the third relay, thereby controlling the third relay to control the on-off of the first circuit, the second circuit, and the third circuit.
For example, when the pressure value of the process chamber is less than or equal to 10Torr, the PLC may output a high level signal to the first relay KA01, KA01 may receive the high level signal, may control the normally closed contacts 11, 12 to open the second relay KA02, and control the normally open contacts 13, 14 to close the third relay KA03, and the on/off of the circuit is controlled by KA 03.
In one embodiment of the present invention, the third relay controls the fourth pair of normally open contacts, the fifth pair of normally open contacts, and the sixth pair of normally open contacts to be closed, and controls the first circuit, the second circuit, and the third circuit to be turned on so that the first gas corresponding valve, the second gas corresponding valve, and the third gas corresponding valve are opened.
For example, in the case where the third relay is on, the third relay may control the fourth, fifth and sixth pairs of normally open contacts to be closed to cause the first, second and third circuits to be on, thereby controlling NF 3 Corresponding valve, H 2 Corresponding valve and SiH 4 The corresponding valve is opened.
For example, as shown in fig. 2, which is a schematic diagram of safety control of a special gas according to an embodiment of the present invention, the third relay KA03 includes a fourth pair of normally open contacts 31 and 32, and NF can be controlled by controlling on/off of the first circuit 3 The on-off of the valve, including the fifth pair of normally open contacts 33, 34, can be controlled by controlling the on-off of the second circuit to control H 2 The on-off of the valve, including the sixth pair of normally open contacts 35, 36, can control SiH by controlling the on-off of the third circuit 4 And the valve is opened and closed.
When the pressure of the process chamber is less than 10Torr, the PLC can output a high-level signal to the 0 contact of the relay KA01, at the moment, the normally open contacts 13 and 14 of the relay KA01 are closed, the normally closed contacts 11 and 12 of the relay KA01 are opened, so that the KA02 can not obtain a high level, the KA02 is opened, and the 0 contact of the KA03 is obtained24V high level signal, in this case by KA03 control circuit. H when normally open contacts 31, 32, normally open contacts 33, 34, and normally open contacts 35, 36 of KA03 relay control KA03 are closed 2 、NF 3 、SiH 4 The signal of valve opening is connected, and the valve is opened. At this time, when the chamber pressure is lower than 10Torr, H 2 、NF 3 、SiH 4 The valves do not electrically repel each other.
In the embodiment of the invention, the pressure value of the process chamber is obtained; when the pressure value is larger than a preset pressure threshold value, when the second gas corresponding valve and the third gas corresponding valve are required to be opened, the first circuit is controlled to be disconnected, and the second circuit is controlled to be connected with the third circuit so that the first gas corresponding valve is closed, and the second gas corresponding valve and the third gas corresponding valve are opened; when the first gas corresponding valve needs to be opened, the first circuit is controlled to be closed, and the second circuit and the third circuit are controlled to be opened, so that the first gas corresponding valve is opened, and the second gas corresponding valve and the third gas corresponding valve are closed. Through adding the valve interlocking into circuit design, when making process chamber pressure reach the default threshold value, first gas and second gas valve can not open simultaneously, and first gas and third gas valve can not open simultaneously to avoided the risk that software control became invalid, prevented taking place the chemical reaction between the special gas and produced the accessory product, caused the damage of hardware and injury of personnel, stopped the potential safety hazard, protection system and personnel safety.
It should be noted that, for simplicity of description, the method embodiments are shown as a series of acts, but it should be understood by those skilled in the art that the embodiments are not limited by the order of acts, as some steps may occur in other orders or concurrently in accordance with the embodiments. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred embodiments, and that the acts are not necessarily required by the embodiments of the invention.
Referring to fig. 3, a block diagram of a semiconductor processing apparatus according to an embodiment of the present invention is shown, where the semiconductor processing apparatus 301 includes: a process chamber, a control circuit; the control circuit comprises a first circuit for controlling the on-off of a valve corresponding to the first gas, a second circuit for controlling the on-off of a valve corresponding to the second gas and a third circuit for controlling the on-off of a valve corresponding to the third gas, and the semiconductor process equipment further comprises:
a controller 3011 for acquiring a pressure value of the process chamber; when the pressure value is larger than a preset pressure threshold value, when the second gas corresponding valve and the third gas corresponding valve are required to be opened, the first circuit is controlled to be disconnected, and the second circuit is controlled to be connected with the third circuit so that the first gas corresponding valve is closed, and the second gas corresponding valve and the third gas corresponding valve are opened; when the first gas corresponding valve needs to be opened, the first circuit is controlled to be closed, and the second circuit and the third circuit are controlled to be opened, so that the first gas corresponding valve is opened, and the second gas corresponding valve and the third gas corresponding valve are closed.
In an optional embodiment of the present invention, the controller is further configured to control the first circuit, the second circuit, and the third circuit to be turned on so that the first gas corresponding valve, the second gas corresponding valve, and the third gas corresponding valve are opened when the pressure value is less than or equal to a preset pressure threshold.
In an alternative embodiment of the present invention, the above circuit further comprises: the controller is further used for acquiring a pressure value of the process chamber, and when the pressure value is larger than a preset pressure threshold value, the first relay is used for controlling the second relay to be on and the third relay to be off so that the second relay can be used for controlling the on and off of the first circuit, the second circuit and the third circuit; when the pressure value is smaller than or equal to a preset pressure threshold value, the first relay is used for controlling the second relay to be switched off and the third relay to be switched on, so that the third relay is used for controlling the on-off of the first circuit, the second circuit and the third circuit.
In an alternative embodiment of the present invention, the first relay includes a first pair of normally closed contacts and a first pair of normally open contacts; and the controller is used for controlling the first pair of normally open contacts to keep an open state through the first relay and controlling the third relay to be open and controlling the first pair of normally closed contacts to keep a closed state through the first relay when the pressure value is larger than a preset pressure threshold value and controlling the second relay to be closed so as to enable the second relay to control the on-off of the first circuit, the second circuit and the third circuit.
In an alternative embodiment of the present invention, the second relay includes a second pair of normally closed contacts, a second pair of normally open contacts, and a third pair of normally open contacts; the controller is configured to control the second pair of normally-closed contacts to be opened through the second relay, control the first circuit to be opened, and control the second pair of normally-open contacts to be closed through the second relay, and control the second circuit to be closed through the third circuit, so that the first gas corresponding valve is closed, the second gas corresponding valve is opened, and the third gas corresponding valve is opened.
In an alternative embodiment of the present invention, the controller is configured to control the second pair of normally-closed contacts to be kept closed by the second relay, control the first circuit to be turned on, and control the second pair of normally-open contacts to be kept open by the second relay, and control the second circuit to be turned off and the third circuit to be turned on, so that the first gas corresponding valve is opened, and the second gas corresponding valve and the third gas corresponding valve are closed.
In an optional embodiment of the present invention, the controller is configured to control, when the pressure value is less than or equal to a preset pressure threshold, the first pair of normally-closed contacts to open via the first relay, the second relay to open, and the first pair of normally-open contacts to close via the first relay, and the third relay to close, so that the third relay controls on/off of the first circuit, the second circuit, and the third circuit.
In an alternative embodiment of the present invention, the third relay includes a fourth pair of normally open contacts, a fifth pair of normally open contacts, and a sixth pair of normally open contacts; and the controller is used for controlling the fourth pair of normally open contacts, the fifth pair of normally open contacts and the sixth pair of normally open contacts to be closed through the third relay and controlling the first circuit, the second circuit and the third circuit to be connected so as to enable the first gas corresponding valve, the second gas corresponding valve and the third gas corresponding valve to be opened.
In an alternative embodiment of the present invention, the first gas is NF 3 The second gas is H 2 The third gas is SiH 4 。
For the device embodiments, since they are substantially similar to the method embodiments, the description is relatively simple, and reference is made to the description of the method embodiments for relevant points.
In this specification, each embodiment is described in a progressive manner, and each embodiment is mainly described by differences from other embodiments, and identical and similar parts between the embodiments are all enough to be referred to each other.
It will be apparent to those skilled in the art that embodiments of the present invention may be provided as a method, apparatus, or computer program product. Accordingly, embodiments of the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, embodiments of the invention may take the form of a computer program product on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) having computer-usable program code embodied therein.
Embodiments of the present invention are described with reference to flowchart illustrations and/or block diagrams of methods, terminal devices (systems), and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flowchart illustrations and/or block diagrams, and combinations of flows and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing terminal device to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing terminal device, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiment and all such alterations and modifications as fall within the scope of the embodiments of the invention.
Finally, it is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article or terminal device comprising the element.
The above description of the invention provides a special gas safety control method and a semiconductor process device, and specific examples are applied to illustrate the principle and implementation of the invention, and the above examples are only used to help understand the method and core idea of the invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
Claims (7)
1. The special gas safety control device is characterized by being applied to semiconductor process equipment, wherein the semiconductor process equipment comprises a process chamber; the control device comprises a control circuit and a controller which are electrically connected;
the control circuit includes:
the first circuit is used for controlling the on-off of the valve corresponding to the first gas;
the second circuit is used for controlling the on-off of the valve corresponding to the second gas;
the third circuit is used for controlling the on-off of the valve corresponding to the third gas;
the controller is used for:
acquiring a pressure value signal of the process chamber;
when the pressure value is larger than a preset pressure threshold value, when the second gas corresponding valve and the third gas corresponding valve are required to be opened, the first circuit is controlled to be disconnected, and the second circuit is controlled to be connected with the third circuit so that the first gas corresponding valve is closed, and the second gas corresponding valve and the third gas corresponding valve are opened; when the first gas corresponding valve needs to be opened, the first circuit is controlled to be closed, and the second circuit and the third circuit are controlled to be opened, so that the first gas corresponding valve is opened, and the second gas corresponding valve and the third gas corresponding valve are closed; when the pressure value of the process chamber is larger than the preset pressure threshold value, the first gas corresponding valve and the second gas corresponding valve are not opened simultaneously, and the first gas corresponding valve and the third gas corresponding valve are not opened simultaneously, so that chemical reaction among the first gas, the second gas and the third gas is prevented from generating byproducts.
2. The control device according to claim 1, wherein,
the controller is further configured to: and under the condition that the pressure value is smaller than or equal to the preset pressure threshold value, controlling the first circuit, the second circuit and the third circuit to be all connected so as to open the first gas corresponding valve, the second gas corresponding valve and the third gas corresponding valve.
3. The control device according to claim 2, characterized in that the control circuit further comprises: the first relay, the second relay and the third relay; the first relay is electrically connected with the second relay and the third relay respectively; the controller is used for:
when the pressure value is larger than the preset pressure threshold value, the first relay is controlled to be switched on and the third relay is controlled to be switched off, so that the second relay controls the on-off of the first circuit, the second circuit and the third circuit;
when the pressure value is smaller than or equal to the preset pressure threshold value, the first relay is controlled to be switched off and the third relay is controlled to be switched on, so that the third relay controls the on-off of the first circuit, the second circuit and the third circuit.
4. A control device according to claim 3, wherein the first relay comprises a first pair of normally closed contacts and a first pair of normally open contacts;
the first pair of normally-open contacts are electrically connected with the third relay, and the first pair of normally-closed contacts are electrically connected with the second relay; the controller is specifically used for:
when the pressure value is greater than the preset pressure threshold: controlling the first pair of normally open contacts to maintain an open state to control the third relay to open; controlling the first pair of normally-closed contacts to keep a closed state so as to control the second relay to be switched on, so that the second relay controls the on-off of the first circuit, the second circuit and the third circuit;
when the pressure value is less than or equal to the preset pressure threshold value: controlling the first pair of normally open contacts to keep a closed state so as to control the third relay to be switched on, so that the third relay controls the on-off of the first circuit, the second circuit and the third circuit; and controlling the first pair of normally-closed contacts to keep an open state so as to control the second relay to be opened.
5. The control device of claim 4, wherein the second relay comprises a second pair of normally closed contacts, a second pair of normally open contacts, and a third pair of normally open contacts;
The second pair of normally-closed contacts is electrically connected with the first circuit, the second pair of normally-open contacts is connected with the second circuit, and the third pair of normally-open contacts is connected with the third circuit; the controller is specifically used for:
when the pressure value is larger than a preset pressure threshold value, when the second gas corresponding valve and the third gas corresponding valve need to be opened: the second pair of normally-closed contacts are controlled to keep an open state so as to control the first circuit to be opened, and the valve corresponding to the first gas is closed; controlling the second pair of normally open contacts to keep a closed state so as to control the second circuit to be connected and enable the second gas corresponding valve to be opened; controlling the third pair of normally open contacts to keep a closed state so as to control the third circuit to be connected and enable the third gas corresponding valve to be opened;
when the pressure value is larger than a preset pressure threshold value, when the corresponding valve of the first gas needs to be opened: controlling the second pair of normally-closed contacts to keep a closed state so as to control the first circuit to be connected and enable the valve corresponding to the first gas to be opened; controlling the second pair of normally open contacts to keep an open state so as to control the second circuit to be opened and enable the second gas corresponding valve to be closed; and controlling the third pair of normally open contacts to keep an open state so as to control the third circuit to be opened and enable the third gas corresponding valve to be closed.
6. The control device of claim 4, wherein the third relay comprises a fourth pair of normally open contacts, a fifth pair of normally open contacts, and a sixth pair of normally open contacts;
the fourth pair of normally open contacts is electrically connected with the first circuit, the fifth pair of normally open contacts is electrically connected with the second circuit, and the sixth pair of normally open contacts is electrically connected with the third circuit; the controller is specifically used for:
and in the case that the pressure value is less than or equal to the preset pressure threshold value: controlling the fourth pair of normally open contacts to keep a closed state so as to control the first circuit to be connected and enable the valve corresponding to the first gas to be opened; controlling the fifth pair of normally open contacts to keep a closed state so as to control the second circuit to be connected and enable the second gas corresponding valve to be opened; and controlling the sixth pair of normally open contacts to keep a closed state so as to control the third circuit to be connected and enable the third gas corresponding valve to be opened.
7. According to the weightsThe control device of claim 1, wherein the first gas is NF 3 The second gas is H 2 The third gas is SiH 4 。
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| US20020160620A1 (en) * | 2001-02-26 | 2002-10-31 | Rudolf Wagner | Method for producing coated workpieces, uses and installation for the method |
| US20070012402A1 (en) * | 2003-07-08 | 2007-01-18 | Sundew Technologies, Llc | Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement |
| CN100541736C (en) * | 2003-11-11 | 2009-09-16 | 东京毅力科创株式会社 | Substrate processing method using same |
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-
2022
- 2022-07-29 CN CN202311269903.5A patent/CN117305819A/en active Pending
- 2022-07-29 CN CN202210905961.1A patent/CN115354312B/en active Active
-
2023
- 2023-07-25 WO PCT/CN2023/109090 patent/WO2024022327A1/en unknown
- 2023-07-25 TW TW112127802A patent/TW202405239A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024022327A1 (en) | 2024-02-01 |
| TW202405239A (en) | 2024-02-01 |
| CN115354312A (en) | 2022-11-18 |
| CN115354312B (en) | 2023-10-13 |
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