CN116666290A - Correction method of grain transfer equipment and grain transfer equipment - Google Patents

Correction method of grain transfer equipment and grain transfer equipment Download PDF

Info

Publication number
CN116666290A
CN116666290A CN202310883160.4A CN202310883160A CN116666290A CN 116666290 A CN116666290 A CN 116666290A CN 202310883160 A CN202310883160 A CN 202310883160A CN 116666290 A CN116666290 A CN 116666290A
Authority
CN
China
Prior art keywords
tip
camera
thimble
platform
upper platform
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310883160.4A
Other languages
Chinese (zh)
Inventor
刘敦
陈思
焦锐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kunshan Hongyi Precision Technology Co ltd
Original Assignee
Kunshan Hongyi Precision Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kunshan Hongyi Precision Technology Co ltd filed Critical Kunshan Hongyi Precision Technology Co ltd
Priority to CN202310883160.4A priority Critical patent/CN116666290A/en
Publication of CN116666290A publication Critical patent/CN116666290A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67271Sorting devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02ATECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
    • Y02A40/00Adaptation technologies in agriculture, forestry, livestock or agroalimentary production
    • Y02A40/10Adaptation technologies in agriculture, forestry, livestock or agroalimentary production in agriculture
    • Y02A40/51Adaptation technologies in agriculture, forestry, livestock or agroalimentary production in agriculture specially adapted for storing agricultural or horticultural products

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manipulator (AREA)

Abstract

The invention discloses a correction method of grain transfer equipment and the grain transfer equipment, wherein the grain transfer equipment comprises a machine table, an upper platform, a lower platform and a thimble extending along the vertical direction. When the equipment is corrected, the thimble arranged on the machine table is utilized to correspondingly pierce the first hole and the second hole in the first base material and the second base material respectively, the first camera and the second camera fixed on the machine table are utilized to respectively acquire the image of the first hole and the image of the second hole, then the coordinate relation among the thimble, the upper platform and the lower platform along the horizontal direction is established according to the coordinates of the first hole and the coordinates of the second hole, and when the crystal grains to be transferred on the first base material are transferred to the target area on the second base material in the follow-up process, the movement amount of the upper platform and the lower platform along the X direction and the Y direction can be accurately controlled according to the coordinate relation, so that the thimble, the crystal grains to be transferred and the target area are accurately aligned along the horizontal direction, and high-precision crystal grain transfer processing is realized.

Description

Correction method of grain transfer equipment and grain transfer equipment
Technical Field
The present invention relates to the field of semiconductor manufacturing technology, and in particular, to a method for calibrating a die transfer apparatus, and a die transfer apparatus.
Background
After chips are cut to form grains, the grains with the quantity of thousands or tens of thousands are usually adhered to a blue film, and the blue film is used as a carrier, so that the grains can be transferred under the condition of orderly arrangement. However, some dies need to be classified before being put into use, and after the test classification is completed, the dies cut on the same chip need to be separated into different blue film carriers.
At present, the crystal grains adhered to the blue film are pushed by the ejector pins, so that the crystal grains are separated from the blue film and further transferred to another Zhang Lan film, and the crystal grains are transferred and sorted. The crystal grain transferring equipment for realizing the method needs high-precision matching among the positions of the crystal grain to be transferred, the target area and the pushing end of the thimble in the X direction, the Y direction and the Z direction, and needs to correct the position of the equipment. In addition, the pushing end of the thimble needs to be replaced after being worn, and the position correction is needed after the replacement of the thimble. Since the size of the crystal grain is extremely small, a great test is put forward on the accuracy of actual correction. In view of this, it is necessary to provide a correction method capable of achieving high-precision position calibration.
Disclosure of Invention
The invention aims to provide a correction method of grain transfer equipment, so as to improve the grain transfer precision.
In order to achieve the above purpose, the invention adopts the following technical scheme: the utility model provides a correction method of grain transfer equipment, grain transfer equipment includes board, upper platform, lower platform and along vertical orientation extension thimble, upper platform and lower platform from top to bottom sets gradually, wherein, the thimble only can set up on the board along Z orientation lift, the thimble has the pointed end that is located the bottom, upper platform, lower platform respectively can locate on the board along X orientation and Y orientation translational motion, upper platform has first coordinate system in the horizontal direction, lower platform has second coordinate system in the horizontal direction;
the first base material is fixedly arranged on the upper platform and is provided with a first face facing downwards, and the crystal grains to be transferred are attached to the first face; the second substrate has an upwardly facing second face with a target area thereon for receiving the die to be transferred,
the correction method at least comprises a positioning step in the horizontal direction, and the positioning step in the horizontal direction comprises the following steps:
s1, penetrating the tip of the thimble into the first substrate along the vertical direction to obtain a first hole, and recording coordinates (Xa, ya) of the upper platform at the moment;
the tip of the thimble is penetrated into the second base material along the vertical direction to obtain a second hole, and the coordinates (Xb, yb) of the lower platform at the moment are recorded;
s2, moving the upper platform to enable the first hole to be located right above the center of the first camera, and recording coordinates (X1, Y1) of the upper platform in the horizontal direction at the moment to obtain the relative position of the upper platform and the center of the first camera, wherein the first camera is fixedly arranged on the machine table;
moving the lower platform to enable the second hole to be located right above the center of the second camera, and recording coordinates (X2, Y2) in the horizontal direction of the lower platform at the moment to obtain the relative position of the center of the lower platform and the center of the second camera, wherein the second camera is fixedly arranged on the machine table;
s3, acquiring relative offset (X3, Y3) between the upper platform and the tip, wherein X3 = X1-Xa and Y3 = Y1-Ya;
obtaining a relative offset (X4, Y4) between the lower platform and the tip, wherein x4=x2-Xb, y4=y2-Yb;
s4, positioning the position of the crystal grain to be transferred on the first surface by adopting the first camera, and acquiring the distance to be moved by the upper platform in the first coordinate system according to the relative offset (X3, Y3) so that the crystal grain to be transferred reaches the position right below the tip;
and positioning the position of the target area on the second surface by adopting the second camera, and acquiring the distance required to move by the lower platform in the second coordinate system according to the relative offset (X4, Y4) so that the target area reaches the position right below the tip.
In some embodiments, the correction method further includes a thimble calibration step after replacing the thimble, wherein after replacing the thimble, a positional deviation (Δx, Δy) of the thimble is obtained through the thimble calibration step as an additional compensation amount when the upper platform and the lower platform move in the horizontal direction in the step S4.
In some embodiments, the thimble calibration step comprises:
before replacing the thimble, moving the upper platform to enable an alignment sensor fixedly arranged on the upper platform to move to the position right below the tip, obtaining the position coordinate of the tip, recording as (X5, Y5),
after the thimble is replaced, the position of the tip is re-measured by the alignment sensor to obtain the position coordinates of the tip as (X5 'and Y5',
the positional deviation (Δx, Δy) is obtained, wherein Δx=x5 '-X5, Δy=y5' -Y5.
In some embodiments, in the step S2: the upper platform is moved firstly, so that the first hole falls into the shooting range of the first camera, then the first hole is shot and positioned, the controller calculates a first relative position of the first hole and the center of the first camera, and then the upper platform is moved according to the first relative position, so that the first hole is positioned right above the center of the first camera.
In some embodiments, in the step S2: the lower platform is moved firstly, so that the second hole falls into the shooting range of the second camera, then the second hole is shot and positioned, the controller calculates a second relative position of the second hole and the center of the second camera, and then the lower platform is moved according to the second relative position, so that the second hole is positioned right above the center of the second camera.
In some embodiments, in the step S4, after positioning the position of the die to be transferred on the first surface using the first camera, the controller calculates the position of the die from the center of the first camera, recorded as (X6, Y6); the upper platform is arranged according to relative coordinates (X Upper part ,Y Upper part ) Moving the crystal grains to be transferred to the position right below the tip, wherein X Upper part =X1+X3+X6,Y Upper part =Y1+Y3+Y6。
In some embodiments, after locating the location of the target area on the second side with the second camera, the controller calculates the location of the target area from the center of the second camera, recorded as (X7, Y7); the lower platform is arranged according to relative coordinates (X Lower part(s) ,Y Lower part(s) ) Moving the target area to a position just below the tip, wherein X Lower part(s) =X2+X4+X7,Y Lower part(s) =Y2+Y4+Y7。
In some embodiments, the second substrate has a positioning point thereon, and the relative coordinates of the target area on the second substrate with respect to the positioning point are preset values (Xc, yc), and in step S4, the position coordinates (Xd, yd) of the positioning point with respect to the center of the second camera are obtained by photographing with the second camera, thereby obtaining the position (X7, Y7) of the target area from the center of the second camera, where x7=xc+xd, y7=yc+yd.
In some embodiments, the correction method further comprises a vertical positioning step for correcting the relative positions of the upper stage, the lower stage, and the tip in the Z direction, the vertical positioning step comprising:
placing the upper platform at a certain initial height;
measuring the actual height of the upper surface of the first substrate on the upper platform by using a laser altimeter, wherein the laser altimeter is constantly arranged on the machine table along a Z-direction coordinate;
measuring the actual height of the upper surface of the second substrate on the lower platform by using the laser altimeter;
positioning the tip of the thimble to the upper surface of the first substrate with an auxiliary vision sensor as a starting reference position of the tip;
the position of the lower platform along the Z direction is kept fixed, and the positions of the upper platform and the tip along the vertical direction are adjusted by means of a precise adjusting mechanism, so that the distances among the tip, the upper platform and the lower platform from top to bottom are adjusted to be preset values.
In some embodiments, the vertical positioning step further includes a tip positioning step of repositioning the tip after the tip wears or the thimble is replaced, the tip positioning step including:
before the tip is worn or the thimble is replaced, detecting by a height sensor fixed on the upper platform to obtain a distance Z1 between the tip and the height sensor;
detecting by the height sensor to obtain a distance Z2 between the tip and the height sensor after the tip is worn or the thimble is replaced;
and obtaining a deviation value DeltaZ=Z1-Z2 of the tip in the vertical direction, and taking the deviation value DeltaZ=Z1-Z2 as a compensation value of displacement in the vertical direction when the thimble ascends and descends in the vertical direction to realize grain transfer.
Another object of the present invention is to provide a die-transfer apparatus, which adopts the correction method of the die-transfer apparatus as described above, wherein the die-transfer apparatus includes a machine table, an upper platform, a lower platform, and a thimble extending in a vertical direction, the thimble, the upper platform, and the lower platform are sequentially disposed from top to bottom, wherein the thimble can be disposed on the machine table only in a lifting manner along a Z direction, the thimble has a tip located at a bottom, the upper platform and the lower platform are respectively disposed on the machine table in a translational motion along an X direction and a Y direction, a first camera and a second camera are fixedly disposed on the machine table, and the first camera and the second camera are both disposed below the lower platform, and the die-transfer apparatus further includes a laser altimeter, which is constantly disposed on the machine table in a Z direction coordinate and is horizontally disposed.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages: according to the grain transfer equipment provided by the embodiment of the invention, during correction, the thimble arranged on the machine table is utilized to correspondingly pierce the first base material and the second base material to obtain the first hole and the second hole, the first camera and the second camera fixed on the machine table are utilized to respectively obtain the image of the first hole and the image of the second hole, then the coordinate relation among the thimble, the upper platform and the lower platform along the horizontal direction is established according to the coordinates of the first hole and the coordinates of the second hole, and when the grains to be transferred on the first base material are transferred to the target area on the second base material, the movement amount of the upper platform and the lower platform along the X direction and the Y direction can be accurately controlled according to the coordinate relation, so that the thimble, the grains to be transferred and the target area can be accurately aligned along the horizontal direction, and high-precision grain transfer processing is realized.
Drawings
FIG. 1 is a schematic diagram showing an overall structure of a die-transferring apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic layout of the upper platform, lower platform and pins of the die transfer apparatus of FIG. 1;
FIG. 3 is a schematic diagram of the positional relationship between the upper and lower platforms and the first and second cameras;
FIG. 4 is a schematic diagram of the transfer of grains from a first side to a second side;
FIG. 5 is a schematic view of the upper and lower stages of the die transfer apparatus of FIG. 1 positioned in a horizontal direction;
FIG. 6 is a schematic diagram of the die transfer apparatus of FIG. 1 in which the upper and lower stages are positioned in a horizontal direction;
FIG. 7 is a schematic view of the horizontal position adjustment of the upper and lower stages after the upper and lower stages are positioned, when the die is transferred to the target area;
FIG. 8 is a schematic view of the structure of the upper platform, lower platform and tip positioned in the vertical direction;
FIG. 9 is a schematic diagram of the positioning of the upper platform, lower platform and tip in the vertical direction;
wherein: 1. a machine table; 2. a top platform; 3. a lower platform; 4. a thimble; 41. a tip;
5. a first camera; 50. a first light source; 6. a second camera; 60. a second light source;
7. a height sensor; 8. a laser altimeter;
10. a first substrate; 10a, a first face; 20. a second substrate; 20a, a second face; 30. a crystal grain; 40. a target area.
Detailed Description
The technical scheme of the invention is further described below with reference to the attached drawings and the optimal embodiment.
Referring to fig. 1 to 4, the present embodiment provides a die transfer apparatus for transferring a plurality of dies 30 attached to one surface of a first substrate 10 to one surface of a second substrate 20, wherein the first substrate 10 has a first face 10a on which the dies 30 are disposed, and the second substrate 20 has a second face 20a for receiving the dies 30, and the second face 20a has a plurality of target areas 40 disposed thereon. The plurality of crystal grains 30 on the first surface 10a are required to be in one-to-one correspondence with the plurality of target areas 40, so that the crystal grains 30 are arranged on the second surface 20a according to a certain rule, and the transfer and the sorting of the crystal grains 30 are realized. The first surface 10a and the second surface 20a are both adhesive and attachable surfaces.
Referring to fig. 1 to 3, the die transferring apparatus includes a machine 1, an upper platform 2, a lower platform 3, and a thimble 4, wherein the thimble 4 can be only arranged on the machine 1 in a lifting manner along a Z direction, the upper platform 2 and the lower platform 3 can be respectively arranged on the machine 1 in a translational manner along an X direction and a Y direction, a guide rail assembly (not labeled in the drawing) for guiding translational movement of the upper platform 2 and the lower platform 3 along the X direction and the Y direction is further arranged on the machine 1, and the upper platform 2 can also be arranged in a position-adjusting manner along a vertical direction (i.e., Z direction). The machine table 1 is also provided with a lifting driving mechanism for driving the thimble 4 to lift along the vertical direction, an upper platform adjusting mechanism for adjusting the positions of the upper platform 2 along the X direction, the Y direction and the Z direction, and a lower platform adjusting mechanism for adjusting the positions of the lower platform 3 along the X direction and the Y direction.
The upper platform 2 is provided with a through hole penetrating along the up-down direction, the lower platform 3 is provided with a supporting plane, the supporting plane is the upper surface of the lower platform 3, when the crystal grain transfer is carried out, the first substrate 10 is fixedly arranged on the upper platform 2, the first surface 10a faces downwards, and the crystal grain 30 to be transferred is positioned in the through hole of the upper platform 2; the second substrate 20 is disposed on the supporting plane 3 of the lower platform 3, the second surface 20a faces upward, the ejector pin 4 is disposed above the upper platform 2 and pushes the die 30 downward in the process of moving from top to bottom, so that the die 30 is separated from the first surface 10a and transferred onto the second surface 20a, a tip 41 is disposed at the lower portion of the ejector pin 4, and the cross-sectional area of the tip 41 is smaller than that of the die 30.
The die transferring apparatus further comprises a first camera 5, a second camera 6, a first light source 50 arranged below the first camera 5, and a second light source 60 arranged below the second camera 6, wherein the first camera 5 and the second camera 6 are fixedly arranged on the machine table 1, and the first camera 5 and the second camera 6 are arranged below the lower platform 3, wherein the first camera 5 is configured to capture and acquire an image of the first substrate 10, and the second camera 6 is configured to capture and acquire an image of the second substrate 20.
The die transfer apparatus further includes a height sensor 7 fixedly provided on the upper stage 2, a laser altimeter 9 provided on the machine 1, an alignment sensor (not shown in the figure), and a controller (not shown in the figure), wherein the coordinates of the laser altimeter 9 in the Z direction on the machine 1 are constant; the controller is in communication connection with the first camera 5, the second camera 6, the lifting driving mechanism, the upper platform adjusting mechanism, the lower platform adjusting mechanism, the height sensor 7, the laser altimeter 9 and the alignment sensor, and is used for assisting the thimble 4, the upper platform 2 and the lower platform 3 in position adjustment, so that the tip 41 of the thimble 4, the crystal grain 30 to be transferred on the upper platform 2 and the target area 40 on the lower platform 3 can be aligned along the left-right direction, and the stroke of the thimble 4 along the vertical direction is controlled within a preset range, thereby enabling the thimble 4 to push the crystal grain 30 downwards in the descending process along Z and accurately transferring the crystal grain 30 from the first surface 10a to the target area 40 on the second surface 20 a.
Before the die transfer is performed by using the die transfer device, the device needs to be calibrated in advance, and the die transfer device at least comprises a positioning step along the horizontal direction, so as to obtain the coordinate relationship between the upper platform 2 and the tip 41 of the thimble 4, and the coordinate relationship between the lower platform 3 and the tip 41, specifically, the positions of the upper platform 2, the lower platform 3 and the tip 41 of the thimble 4 along the horizontal direction are aligned, wherein the upper platform 2 has a first coordinate system 100 along the horizontal direction, and the lower platform 3 has a second coordinate system 200 along the horizontal direction.
In the present embodiment, as shown in fig. 5 to 7, the positioning step in the horizontal direction includes the steps of:
s1, horizontally moving the upper platform 2 to enable the first base material 10 to be located right below the ejector pins 4, enabling the ejector pins 4 to descend downwards along Z, enabling the tip 41 of the ejector pins to penetrate into the first base material 10 along the vertical direction to obtain a first hole A, and recording coordinates (Xa, ya) of the upper platform 2 at the moment;
horizontally moving the lower platform 3 so that the second substrate 20 is positioned right below the thimble 4, the thimble 4 descends along Z, the tip 41 of the thimble penetrates into the second substrate 20 along the vertical direction to obtain a second hole B, and the coordinates (Xb, yb) of the lower platform 3 are recorded at the moment;
s2, moving the upper platform 2 so that the first hole A falls right above the center of the first camera 5, and recording coordinates (X1, Y1) of the upper platform 2 in the horizontal direction at the moment, wherein the obtained relative position of the upper platform 2 and the center of the first camera 5 is;
moving the lower stage 3 so that the second hole B is located right above the center of the second camera 6, recording coordinates (X2, Y2) in the horizontal direction of the lower stage 3 at this time, and obtaining the relative position of the lower stage 3 and the center of the second camera 6;
s3, acquiring relative offset (X3, Y3) between the upper platform 2 and the tip 41, wherein X3 = X1-Xa and Y3 = Y1-Ya;
acquiring a relative offset (X4, Y4) between the lower stage 3 and the tip 41, wherein x4=x2-Xb, y4=y2-Yb;
s4, when transferring the crystal grain 30 on the first surface 10a to the target area 40 on the second surface 20a, positioning the position of the crystal grain 30 to be transferred on the first surface 10a by adopting the first camera 5, and acquiring the distance to be moved by the upper platform 2 in the first coordinate system 100 according to the relative offset (X3, Y3) obtained in the step S3, so that the crystal grain 30 to be transferred reaches the position right below the tip 41; the second camera 6 is used to locate the position of the target area 40 on the second face 20a and, based on the relative offsets (X4, Y4) obtained in step S3, the distance the lower stage 3 needs to move within the second coordinate system 100 is acquired such that the target area 40 reaches directly under the tip 41. In this way, the positions of the tip 41, the die 30 to be transferred and the target area 40 in the horizontal direction are corresponding, and the die 30 can be pushed down onto the corresponding target area 40 in the process of downward movement of the ejector pin 4.
Specifically, in the above step S2, referring to fig. 6, the upper stage 2 is moved so that the first hole a falls within the photographing range of the first camera 5, the first hole a is photographed and positioned, the controller calculates a first relative position of the first hole a and the center of the first camera 5, and then, the upper stage 2 is moved in the first coordinate system 100 according to the above first relative position so that the first hole a is located directly above the center of the first camera 5. Similarly, in step S2, the lower stage 3 is also moved so that the second hole B falls within the shooting range of the second camera 6, the second hole B is positioned by shooting, the controller calculates a second relative position of the second hole B and the center of the second camera 6, and then the lower stage 3 is moved according to the second relative position so that the second hole B is located directly above the center of the second camera 6.
The steps S1 to S3 described above need to be performed only when the first operation is performed after the installation of the apparatus, and after the completion of the steps described above, step S4 can be continuously performed to effect the transfer of the die 30.
In step S4, specifically, referring to fig. 7, after positioning the position of the die 30 to be transferred on the first face 10a with the first camera 5, the controller calculates the position of the die 30 from the center of the first camera 5, recorded as (X6, Y6); the upper stage 2 is arranged according to relative coordinates (X Upper part ,Y Upper part ) Move so that the crystal grain 30 to be transferred reaches the position right below the tip 41, wherein X Upper part =X1+X3+X6,Y Upper part =y1+y3+y6, that is to say, the coordinates of the upper stage 2 moving in the horizontal direction within its own first coordinate system 100Is (X) Upper part ,Y Upper part ) The die 30 to be transferred can be moved to just below the tip 41, achieving alignment in the horizontal direction.
Similarly, after locating the location of the target area 40 on the second side 20a with the second camera 6, the controller calculates the location of the target area 40 from the center of the second camera 6, recorded as (X7, Y7); the lower platform 3 is arranged according to the relative coordinates (X Lower part(s) ,Y Lower part(s) ) Move so that the target area 40 reaches just below the tip 41, where X Lower part(s) =X2+X4+X7,Y Lower part(s) =y2+y4+y7. That is, the coordinates of the lower stage 3 moving in the horizontal direction within the own second coordinate system 200 are (X Lower part(s) ,Y Lower part(s) ) The target area 40 can be moved directly under the tip 41.
In this embodiment, the second substrate 20 is typically a specific product, and each target area 40 is a preset position on the product, so, based on the positioning point P set on the second substrate 20, the positioning point P may also be referred to as a mark point, the relative coordinates of the target area 40 on the second substrate 20 with respect to the positioning point P are preset values (Xc, yc), and in step S4, only the position coordinates (Xd, yd) of the positioning point P with respect to the center of the second camera 6 need to be obtained by photographing with the second camera 6, so that the position (X7, Y7) of the target area 40 from the center of the second camera 6 can be obtained, where x7=xc+xd, y7=yc+yd. In this way, the second camera 6 needs to take a photograph only once, and the position coordinates (Xd, yd) of the anchor point P with respect to the center of the second camera 6 are obtained, so that the positions (X7, Y7) of all the target areas 40 on the second substrate 20 from the center of the second camera 6 can be obtained, thereby obtaining the movement coordinates of the stage 3 at each time of performing the die transfer operation, and greatly reducing the amount of calculation.
The above positions of the die 30 and the target region 40 refer to the center position of the die 30 and the center position of the target region 40.
After replacing the thimble 4, the tip 41 of the thimble 4 is shifted to a smaller position in the horizontal direction, and in order to improve the machining precision, the correction method of the embodiment further includes a thimble calibration step after replacing the thimble 4, whichAfter the thimble 4 is replaced, the positional deviation (Δx, Δy) of the thimble 4 is obtained through the thimble calibration step, and is used as an additional compensation amount when the upper platform 2 and the lower platform 3 move in the horizontal direction in the step S4, that is, the coordinates moving in the horizontal direction in the first coordinate system 100 are (X 'during the alignment of the upper platform 2 in the horizontal direction after the thimble 4 is replaced' Upper part ,Y’ Upper part ) Wherein X 'is' Upper part =X Upper part +△X,Y’ Upper part =Y Upper part A + [ delta ] Y; in the process of achieving alignment in the horizontal direction of the lower stage 3, the coordinates moving in the horizontal direction in the second coordinate system 200 are (X' Lower part(s) ,Y’ Lower part(s) ) Wherein X 'is' Lower part(s) =X Lower part(s) +△X,Y’ Lower part(s) =Y Lower part(s) +△Y。
Specifically, the thimble calibration step includes: before replacing the thimble 4, the upper platform 2 is moved, so that an alignment sensor (not shown in the figure) fixed on the upper platform 2 moves to the position right below the tip 41, the position coordinates of the tip are obtained, the position coordinates are recorded as (X5, Y5), after replacing the thimble 4, the position of the tip 41 after replacing the thimble is re-measured by using the alignment sensor, the position coordinates of the tip 41 are obtained as (X5 ', Y5'), and the position deviation (Δx, Δy) is obtained, wherein Δx=x5 '-X5, Δy=y5' -Y5. The alignment sensor may specifically be a piezoelectric sensor, and when the tip 41 of the thimble 4 is pressed against the alignment sensor, the alignment between the alignment sensor and the tip 41 is achieved. The above (X5, Y5) is measured and recorded only once, and is obtained once again (X5', Y5 ") after each replacement of the thimble 4.
The calibration method of the die-transferring apparatus of the present embodiment further includes a vertical positioning step for calibrating the relative positions of the upper stage 2, the lower stage 3, and the tip 41 along the Z direction, so that the distance between the first surface 10a and the second surface 20a, and the distance between the ejector pins 4 along the vertical direction are reduced to achieve precise and controllable stroke of die-transferring.
The vertical direction positioning step specifically comprises the following steps: placing the upper platform 2 at a certain initial height; measuring the actual height of the upper surface of the first substrate 10 on the upper platform 2 by using the laser altimeter 9, and measuring the actual height of the upper surface (namely the second surface 20 a) of the second substrate 20 on the lower platform 3 by using the laser altimeter 9; positioning the tip 41 of the thimble 4 to the upper surface of the first substrate 10 with an auxiliary vision sensor as a starting reference position of the tip 41; subsequently, the position of the lower stage 3 in the Z direction is kept fixed, and the positions of the upper stage 2 and the tip 41 in the vertical direction are adjusted by means of a fine adjustment mechanism, so that the distances of the tip 41, the upper stage 2, and the lower stage 3 from top to bottom are adjusted to a preset value.
The die-transfer apparatus of the present embodiment, the correction method thereof further includes a positioning step of repositioning the tip 41 after the wear of the tip 41 has been performed for a long period of time or after the replacement of the thimble 4, the tip positioning step including: detecting by a height sensor 8 fixed on the upper platform 2 before the tip 41 is worn or the thimble 4 is replaced to obtain a distance Z1 between the tip 41 and the height sensor 8; after the tip 41 is worn or the thimble 4 is replaced, detecting by the height sensor 8 to obtain the distance Z2 between the tip 41 and the height sensor 8; subsequently, a deviation value Δz=z1-Z2 of the tip 41 in the vertical direction is obtained as a compensation value for displacement in the vertical direction when the ejector pin is lifted in the vertical direction to realize grain transfer.
In summary, the die transferring apparatus according to the embodiment of the present invention can calibrate the positions of the upper platform 2, the lower platform 3 and the ejector pins 4 in the apparatus by the above-mentioned calibration method, so that the upper platform 2, the lower platform 3 and the ejector pins 4 can be precisely matched, and the dies 30 disposed on the first substrate 10 are precisely transferred to each target area 40 of the second substrate 20 one by one, thereby improving the die transferring precision.
The above embodiments are only for illustrating the technical concept and features of the present invention, and are intended to enable those skilled in the art to understand the content of the present invention and to implement the same, but are not intended to limit the scope of the present invention, and all equivalent changes or modifications made according to the spirit of the present invention should be included in the scope of the present invention.

Claims (11)

1. A method of calibrating a particle transfer apparatus, comprising: the grain transfer equipment comprises a machine table, an upper platform, a lower platform and a thimble extending along the vertical direction, wherein the thimble, the upper platform and the lower platform are sequentially arranged from top to bottom, the thimble can be only arranged on the machine table in a lifting manner along the Z direction, the thimble is provided with a tip end positioned at the bottom, the upper platform and the lower platform can be respectively arranged on the machine table in a translational movement along the X direction and the Y direction, the upper platform is provided with a first coordinate system along the horizontal direction, and the lower platform is provided with a second coordinate system along the horizontal direction;
the first base material is fixedly arranged on the upper platform and is provided with a first face facing downwards, and the crystal grains to be transferred are attached to the first face; the second substrate has an upwardly facing second face with a target area thereon for receiving the die to be transferred,
the correction method at least comprises a positioning step in the horizontal direction, and the positioning step in the horizontal direction comprises the following steps:
s1, penetrating the tip of the thimble into the first substrate along the vertical direction to obtain a first hole, and recording coordinates (Xa, ya) of the upper platform at the moment;
the tip of the thimble is penetrated into the second base material along the vertical direction to obtain a second hole, and the coordinates (Xb, yb) of the lower platform at the moment are recorded;
s2, moving the upper platform to enable the first hole to be located right above the center of the first camera, and recording coordinates (X1, Y1) of the upper platform in the horizontal direction at the moment to obtain the relative position of the upper platform and the center of the first camera, wherein the first camera is fixedly arranged on the machine table;
moving the lower platform to enable the second hole to be located right above the center of the second camera, and recording coordinates (X2, Y2) in the horizontal direction of the lower platform at the moment to obtain the relative position of the center of the lower platform and the center of the second camera, wherein the second camera is fixedly arranged on the machine table;
s3, acquiring relative offset (X3, Y3) between the upper platform and the tip, wherein X3 = X1-Xa and Y3 = Y1-Ya;
obtaining a relative offset (X4, Y4) between the lower platform and the tip, wherein x4=x2-Xb, y4=y2-Yb;
s4, positioning the position of the crystal grain to be transferred on the first surface by adopting the first camera, and acquiring the distance to be moved by the upper platform in the first coordinate system according to the relative offset (X3, Y3) so that the crystal grain to be transferred reaches the position right below the tip;
and positioning the position of the target area on the second surface by adopting the second camera, and acquiring the distance required to move by the lower platform in the second coordinate system according to the relative offset (X4, Y4) so that the target area reaches the position right below the tip.
2. The correction method of a die transfer apparatus according to claim 1, characterized in that: the correction method further comprises a thimble calibration step after replacing the thimble, wherein after replacing the thimble, the position deviation (delta X, delta Y) of the thimble is obtained through the thimble calibration step and is used as an additional compensation amount when the upper platform and the lower platform move along the horizontal direction in the step S4.
3. The correction method of a die transfer apparatus according to claim 2, characterized in that: the thimble calibration step comprises the following steps:
before replacing the thimble, moving the upper platform to enable an alignment sensor fixedly arranged on the upper platform to move to the position right below the tip, obtaining the position coordinate of the tip, recording as (X5, Y5),
after the thimble is replaced, the position of the tip is re-measured by the alignment sensor to obtain the position coordinates of the tip as (X5 'and Y5',
the positional deviation (Δx, Δy) is obtained, wherein Δx=x5 '-X5, Δy=y5' -Y5.
4. The correction method of a die transfer apparatus according to claim 1, characterized in that: in the step S2: the upper platform is moved firstly, so that the first hole falls into the shooting range of the first camera, then the first hole is shot and positioned, the controller calculates a first relative position of the first hole and the center of the first camera, and then the upper platform is moved according to the first relative position, so that the first hole is positioned right above the center of the first camera.
5. The correction method of a die transfer apparatus according to claim 1, characterized in that: in the step S2: the lower platform is moved firstly, so that the second hole falls into the shooting range of the second camera, then the second hole is shot and positioned, the controller calculates a second relative position of the second hole and the center of the second camera, and then the lower platform is moved according to the second relative position, so that the second hole is positioned right above the center of the second camera.
6. The correction method of a die transfer apparatus according to claim 1, characterized in that: in the step S4, after the first camera is used to locate the position of the die to be transferred on the first surface, the controller calculates the position of the die from the center of the first camera, and records the position as (X6, Y6); the upper platform is arranged according to relative coordinates (X Upper part ,Y Upper part ) Moving the crystal grains to be transferred to the position right below the tip, wherein X Upper part =X1+X3+X6,Y Upper part =Y1+Y3+Y6。
7. The correction method of a die transfer apparatus according to claim 1, characterized in that: after locating the location of the target area on the second side with the second camera, the controller calculates the location of the target area from the center of the second camera, recorded as (X7, Y7); the lower platform is arranged according to relative coordinates (X Lower part(s) ,Y Lower part(s) ) Moving the target area to a position just below the tip, wherein X Lower part(s) =X2+X4+X7,Y Lower part(s) =Y2+Y4+Y7。
8. The correction method of a die transfer apparatus according to claim 7, characterized in that: the second base material is provided with a positioning point, the deviation of the target area on the second base material relative to the positioning point is a preset value (Xc, yc), in the step S4, the second camera is used for photographing to obtain the position coordinates (Xd, yd) of the positioning point relative to the center of the second camera, so as to obtain the position (X7, Y7) of the target area from the center of the second camera, wherein x7=xc+xd, y7=yc+yd.
9. The correction method of a grain transfer apparatus according to any one of claims 1 to 8, characterized in that: the correction method further includes a vertical direction positioning step for correcting the relative positions of the upper stage, the lower stage, and the tip in the Z direction, the vertical direction positioning step including:
placing the upper platform at a certain initial height;
measuring the actual height of the upper surface of the first substrate on the upper platform by using a laser altimeter, wherein the laser altimeter is constantly arranged on the machine table along a Z-direction coordinate;
measuring the actual height of the upper surface of the second substrate on the lower platform by using the laser altimeter;
positioning the tip of the thimble to the upper surface of the first substrate with an auxiliary vision sensor as a starting reference position of the tip;
the position of the lower platform along the Z direction is kept fixed, and the positions of the upper platform and the tip along the vertical direction are adjusted by means of a precise adjusting mechanism, so that the distances among the tip, the upper platform and the lower platform from top to bottom are adjusted to be preset values.
10. The correction method of a die transfer apparatus according to claim 9, characterized in that: the vertical direction positioning step further includes a tip positioning step of repositioning the tip after the tip is worn or the thimble is replaced, the tip positioning step including:
before the tip is worn or the thimble is replaced, detecting by a height sensor fixed on the upper platform to obtain a distance Z1 between the tip and the height sensor;
detecting by the height sensor to obtain a distance Z2 between the tip and the height sensor after the tip is worn or the thimble is replaced;
and obtaining a deviation value DeltaZ=Z1-Z2 of the tip in the vertical direction, and taking the deviation value DeltaZ=Z1-Z2 as a compensation value of displacement in the vertical direction when the thimble ascends and descends in the vertical direction to realize grain transfer.
11. A grain transfer apparatus characterized in that: the die transfer apparatus adopts the correction method of the die transfer apparatus according to any one of claims 1 to 10, wherein the die transfer apparatus comprises a machine table, an upper platform, a lower platform and a thimble extending in a vertical direction, the thimble, the upper platform and the lower platform are sequentially arranged from top to bottom, wherein the thimble can be arranged on the machine table only in a lifting manner along a Z direction, the thimble is provided with a tip end positioned at the bottom, the upper platform and the lower platform are respectively arranged on the machine table in a translational movement along an X direction and a Y direction,
the die transfer device comprises a lower platform, and is characterized in that a first camera and a second camera are fixedly arranged on the platform, the first camera and the second camera are both positioned below the lower platform, the die transfer device further comprises a laser altimeter, and the laser altimeter is arranged on the platform in a translation mode along the Z-direction coordinate constantly and along the horizontal direction.
CN202310883160.4A 2023-07-19 2023-07-19 Correction method of grain transfer equipment and grain transfer equipment Pending CN116666290A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310883160.4A CN116666290A (en) 2023-07-19 2023-07-19 Correction method of grain transfer equipment and grain transfer equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310883160.4A CN116666290A (en) 2023-07-19 2023-07-19 Correction method of grain transfer equipment and grain transfer equipment

Publications (1)

Publication Number Publication Date
CN116666290A true CN116666290A (en) 2023-08-29

Family

ID=87715489

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310883160.4A Pending CN116666290A (en) 2023-07-19 2023-07-19 Correction method of grain transfer equipment and grain transfer equipment

Country Status (1)

Country Link
CN (1) CN116666290A (en)

Similar Documents

Publication Publication Date Title
US20170148759A1 (en) Bonding apparatus and bonding method
JP6928134B2 (en) Electronic component mounting equipment and mounting method, and package component manufacturing method
KR101153053B1 (en) Component mounting apparatus and component mounting method
KR101972363B1 (en) Mounting device and measurement method
JP7325965B2 (en) Element mounting apparatus, adjustment method for element mounting apparatus, and element mounting method
CN107976875B (en) Substrate alignment device and alignment method
CN101662926B (en) Method for controlling device for mounting electronic component
JP2014060363A (en) Electronic component mounting device
KR20050029689A (en) Method for aligning the bondhead of a die bonder
JP5113406B2 (en) Electronic component mounting equipment
JP4824641B2 (en) Parts transfer device
JP4855347B2 (en) Parts transfer device
KR101617806B1 (en) Method for Setting Position of Picker Head for Semiconductor Manufacturing Device
KR20190110026A (en) Die bonding apparatus and manufacturing method of semiconductor device
JP2009016673A5 (en)
JP7293477B2 (en) Mounting equipment
CN116666290A (en) Correction method of grain transfer equipment and grain transfer equipment
CN112218517B (en) Mounting device
CN112867386B (en) Automatic chip mounting device, suction nozzle thereof and automatic chip mounting method
CN112331582A (en) Chip mounting device and method for manufacturing semiconductor device
CN218584923U (en) Test needle pressure compensation system
CN114823414A (en) Chip mounting device and method for manufacturing semiconductor device
JPH11307615A (en) Alignment of work
CN113871319A (en) Mounting device and mounting method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information

Country or region after: China

Address after: 215000 No. 2, zengshan Road, Lujia Town, Kunshan City, Suzhou City, Jiangsu Province

Applicant after: Kunshan Hongyi Precision Technology Co.,Ltd.

Address before: No. 9, Hefeng Jinzhu Road, Lujia Town, Kunshan City, Suzhou City, Jiangsu Province 215331

Applicant before: Kunshan Hongyi Precision Technology Co.,Ltd.

Country or region before: China

CB02 Change of applicant information