CN116646326B - Intelligent power module and electronic equipment with same - Google Patents

Intelligent power module and electronic equipment with same Download PDF

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Publication number
CN116646326B
CN116646326B CN202310482754.4A CN202310482754A CN116646326B CN 116646326 B CN116646326 B CN 116646326B CN 202310482754 A CN202310482754 A CN 202310482754A CN 116646326 B CN116646326 B CN 116646326B
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China
Prior art keywords
power
side frame
reverse
area
voltage
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CN202310482754.4A
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Chinese (zh)
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CN116646326A (en
Inventor
李正凯
成章明
周文杰
谢地林
刘剑
岑锦升
别清峰
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Hisense Home Appliances Group Co Ltd
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Hisense Home Appliances Group Co Ltd
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Priority to CN202310482754.4A priority Critical patent/CN116646326B/en
Publication of CN116646326A publication Critical patent/CN116646326A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49565—Side rails of the lead frame, e.g. with perforations, sprocket holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Combinations Of Printed Boards (AREA)

Abstract

The invention discloses an intelligent power module and an electronic device with the same, wherein the intelligent power module comprises: the substrate is provided with a conductive area and a jumper area which are spaced from each other; the frame comprises a control side frame, a power side frame and a connecting rod, wherein the control side frame and the power side frame are respectively arranged on two opposite sides of the substrate, the conducting area and the jumper area are arranged between the power side frame and the control side frame, the jumper area is arranged close to the power side frame relative to the control side frame and is electrically connected with the power side frame, and the connecting rod is connected with the substrate; the reverse conduction type power chip is arranged on the conductive area and is positioned on one side of the connecting rod, which is opposite to the power side frame, and the reverse conduction type power chip is respectively and electrically connected with the jumper area and the driving chip of the control side frame. According to the intelligent power module provided by the embodiment of the invention, the position interference of the conductive piece and the connecting rod between the reverse-conduction type power chip and the power side frame can be avoided while the flash on the surface of the module is avoided, and the short circuit or the open circuit is avoided.

Description

Intelligent power module and electronic equipment with same
Technical Field
The invention relates to the technical field of intelligent power modules, in particular to an intelligent power module and electronic equipment with the same.
Background
The intelligent power module in the related art generally comprises a substrate, a control side frame, a power side frame, a connecting rod, a power chip and a free-wheeling diode, wherein the connecting rod is used for pressing the substrate in the manufacturing process, plastic package material is prevented from overflowing on the surface of the substrate to generate substrate surface flash defects, the power chip is electrically connected with a driving chip of the control side frame, and the power chip is electrically connected with the power side frame through the free-wheeling diode, but the power chip and the free-wheeling diode are large in integral area, high in cost and thermal resistance, high in junction temperature fluctuation and the like.
As shown in fig. 12, some intelligent power modules 11 use a reverse conducting power chip 12 that integrates a power chip and a flywheel diode, so that the area of the chip can be reduced, and the cost, thermal resistance and junction temperature fluctuation can be reduced, but when the connecting rod 13 is connected with the substrate 14, the conducting element 16 between the reverse conducting power chip 12 and the power side frame 15 can interfere with the connecting rod 13 in position, and the conducting element 16 between the reverse conducting power chip 12 and the power side frame 15 can be damaged and deformed, so that the situations such as short circuit or open circuit can occur.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, an object of the present invention is to provide an intelligent power module, which can avoid position interference between a conductive member and a connecting rod between a reverse conduction type power chip and a power side frame and avoid short circuit or disconnection while avoiding flash on the surface of the module.
The invention further provides electronic equipment with the intelligent power module.
In order to achieve the above object, according to a first aspect of the present invention, an embodiment provides an intelligent power module, including: the circuit comprises a substrate, a first electrode and a second electrode, wherein the substrate is provided with a conductive area and a jumper area which are spaced from each other; the frame comprises a control side frame, a power side frame and a connecting rod, wherein the control side frame and the power side frame are respectively arranged on two opposite sides of the substrate, the conducting area and the jumper area are positioned between the power side frame and the control side frame, the jumper area is more adjacent to the power side frame relative to the control side frame and is electrically connected with the power side frame, and the connecting rod is connected with the substrate; the reverse conduction type power chip is arranged in the conductive area and is positioned on one side of the connecting rod, which is opposite to the power side frame, and the reverse conduction type power chip is respectively and electrically connected with the jumper area and the driving chip of the control side frame.
According to the intelligent power module provided by the embodiment of the invention, the position interference of the conductive piece and the connecting rod between the reverse-conduction type power chip and the power side frame can be avoided while the flash on the surface of the module is avoided, and the short circuit or the open circuit is avoided.
According to some embodiments of the invention, the control side frame and the power side frame are disposed on opposite sides of the substrate in a first direction; the connecting rods are connected to two opposite sides of the substrate in a second direction perpendicular to the first direction; and on a plane perpendicular to the first direction, the orthographic projection of at least one part of the jumper area and the orthographic projection of the connecting rod are staggered in the second direction, and the at least one part of the jumper area is electrically connected with the reverse-conduction power chip.
According to some embodiments of the invention, the reverse conducting power chips are plural and are arranged at intervals along the second direction, the substrate is provided with plural conducting areas and at least one jumper area, and each conducting area is provided with at least one reverse conducting power chip; wherein at least one of the reverse conducting power chips closest to the conductive region of the link is electrically connected to the jumper region.
According to some embodiments of the invention, the plurality of reverse conducting power chips includes a low voltage reverse conducting power chip and a high voltage reverse conducting power chip; the plurality of conductive areas comprise a low-voltage conductive area and a high-voltage conductive area, the low-voltage reverse-conduction type power chip is arranged in the low-voltage conductive area, and the high-voltage reverse-conduction type power chip is arranged in the high-voltage conductive area; and the low-voltage reverse conducting type power chip closest to the low-voltage conducting area of the connecting rod is electrically connected with the jumper area.
According to some embodiments of the invention, a low voltage conductive area closest to the link is provided with a notch, and the jumper area is located in the notch.
According to some embodiments of the invention, a side of the low-voltage conductive area closest to the connecting rod in the second direction is provided with an avoidance port for avoiding the connecting rod, and the notch is communicated with the avoidance port.
According to some embodiments of the invention, the notch penetrates through a side of the low voltage conductive area facing the connecting rod in the second direction and/or the notch penetrates through a side of the low voltage conductive area facing the power side frame in the first direction.
According to some embodiments of the invention, the sidewalls of the notch are joined together.
According to some embodiments of the present invention, the low-voltage reverse-conduction power chips are plural, the low-voltage conductive areas are plural, and the plural low-voltage reverse-conduction power chips are mounted in the plural low-voltage conductive areas in a one-to-one correspondence manner; and each low-voltage conductive area is provided with a notch, each notch is internally provided with a jumper area, and the low-voltage reverse-conduction power chip is electrically connected with the jumper area of the low-voltage conductive area.
According to some embodiments of the invention, the high-voltage reverse-conduction power chips are multiple, the high-voltage conductive area is one and the high-voltage reverse-conduction power chips are all installed in the high-voltage conductive area; the high-voltage conductive area is provided with a plurality of gaps, the gaps are distributed at intervals along the second direction, and the number of the gaps is the same as that of the high-voltage reverse-conduction power chips.
According to some embodiments of the invention, the sidewalls of the notch are joined together.
According to some embodiments of the present invention, the number of the low-voltage reverse-conduction power chips is three, the number of the low-voltage conductive areas is three, and the three low-voltage reverse-conduction power chips are correspondingly arranged in the three low-voltage conductive areas one by one; the number of the high-voltage reverse-conduction type power chips is three, the number of the high-voltage conductive areas is one, and the three high-voltage reverse-conduction type power chips are all arranged in the high-voltage conductive areas.
According to some embodiments of the invention, the jumper area is located on a side of the link opposite the control side frame.
According to some embodiments of the invention, the smart power module further comprises: the substrate, the frame and the reverse conducting power chip are packaged in the plastic package body, one surface of the substrate, which is opposite to the reverse conducting power chip, is flush with the surface of the plastic package body and is exposed out of the plastic package body, the control side frame is provided with a control side pin, the power side frame is provided with a power side pin, and the control side pin and the power side pin extend out of the plastic package body; the control side pins are connected with a circuit board, the driving chip is mounted on the circuit board, and the driving chip is packaged in the plastic package body; or the control side pin is connected with an integrally formed base island, the driving chip is mounted on the base island, and the driving chip is packaged in the plastic package body.
According to some embodiments of the invention, the power side frame is connected to the substrate; the substrate comprises a conducting layer, an insulating layer and a radiating layer, wherein the conducting layer and the radiating layer are respectively arranged on the surfaces of two sides of the insulating layer, the jumper area and the conducting area are arranged on the conducting layer, the connecting rod is connected to the conducting layer, the radiating layer is exposed from the plastic package body, or the substrate comprises the conducting layer and the insulating radiating layer, the jumper area and the conducting area are arranged on the conducting layer, the insulating radiating layer is arranged on one surface of the conducting layer, which is opposite to the reverse-conduction power chip, the connecting rod is connected to the conducting layer, and the insulating radiating layer is exposed from the plastic package body.
According to a second aspect of the present invention, an electronic device is provided, comprising an intelligent power module according to an embodiment of the first aspect of the present invention.
According to the electronic device of the second aspect of the embodiment of the invention, by using the intelligent power module according to the first aspect of the embodiment of the invention, the position interference of the conductive piece and the connecting rod between the reverse-conduction power chip and the power side frame can be avoided while avoiding the flash on the surface of the module, so that the short circuit or the open circuit is avoided.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
fig. 1 is a schematic diagram of a configuration of an intelligent power module according to an embodiment of the present invention.
Fig. 2 is a schematic structural view of a substrate of a smart power module according to an embodiment of the present invention.
Fig. 3 is a schematic structural view of another view of a substrate of a smart power module according to an embodiment of the present invention.
Fig. 4 is a schematic structural diagram of an intelligent power module according to another embodiment of the present invention.
Fig. 5 is a schematic structural diagram of a substrate of a smart power module according to another embodiment of the present invention.
Fig. 6 is a schematic structural diagram of a smart power module according to still another embodiment of the present invention.
Fig. 7 is a schematic structural view of a substrate of a smart power module according to still another embodiment of the present invention.
Fig. 8 is a schematic structural diagram of a smart power module according to still another embodiment of the present invention.
Fig. 9 is a schematic structural view of a substrate of a smart power module according to still another embodiment of the present invention.
Fig. 10 is a cross-sectional view of a smart power module according to an embodiment of the present invention.
Fig. 11 is a cross-sectional view of a smart power module according to another embodiment of the present invention.
Fig. 12 is a schematic diagram of a prior art smart power module.
Reference numerals:
1. an intelligent power module;
100. a substrate; 110. a conductive region; 111. a low voltage conductive region; 112. a notch; 113. an avoidance port; 114. a high voltage conductive region; 120. a jumper region; 130. a conductive layer; 140. an insulating layer; 150. a heat dissipation layer; 160. an insulating heat dissipation layer;
200. a frame; 210. a control side frame; 211. a driving chip; 212. a control side pin; 220. a power side frame; 221. a power side pin; 230. a connecting rod;
300. a reverse-conducting power chip; 310. a low voltage reverse conducting power chip; 320. a high voltage reverse conducting power chip;
400. a plastic package body; 500. a circuit board; 600. and a conductive member.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and to simplify the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
In the description of the invention, a "first feature" or "second feature" may include one or more of such features.
In the description of the invention, "a plurality" means two or more, and "a number" means one or more.
The following describes the intelligent power module 1 (Intelligent Power Module, IPM) according to an embodiment of the present invention with reference to the accompanying drawings.
As shown in fig. 1 to 10, the smart power module 1 according to an embodiment of the present invention includes a substrate 100, a frame 200, and a reverse-conducting power chip 300.
The substrate 100 is provided with a conductive area 110 and a jumper area 120 which are spaced apart from each other, the frame 200 comprises a control side frame 210, a power side frame 220 and a connecting rod 230, the control side frame 210 and the power side frame 220 are respectively arranged on two opposite sides of the substrate 100, the conductive area 110 and the jumper area 120 are arranged between the power side frame 220 and the control side frame 210, the jumper area 120 is arranged close to the power side frame 220 relative to the control side frame 210 and is electrically connected with the power side frame 220, the connecting rod 230 is connected with the substrate 100, a reverse-conduction power chip 300 is arranged on the conductive area 110 and is positioned on one side of the connecting rod 230, which is opposite to the power side frame 220, and the reverse-conduction power chip 300 is electrically connected with the jumper area 120 and a driving chip 211 of the control side frame 210 respectively.
Wherein. The substrate 100 may be a two-sided copper-clad ceramic substrate 100 (Direct Copper Bond, DBC), and the shape of the jumper region 120 may not be limited, for example, the shape of the jumper region 120 may be a band, a saw tooth, a rectangle, or the like.
For example, when the frame 200 is manufactured, the control side frame 210, the power side frame 220, and the link 230 may be integrally connected to each other, and after the frame 200 and the substrate 100 are connected and the intelligent power module 1 is packaged, the connection structure between the control side frame 210, the power side frame 220, and the link 230 is removed, and at this time, the control side frame 210, the power side frame 220, and the link 230 may be separated from each other.
In addition, the control side frame 210 and the driving chip 211 may be connected by a material having a small resistivity, for example, the control side frame 210 and the driving chip 211 may be connected by gold wires or copper wires, or the driving chip 211 may be adhered to the control side frame 210 by silver paste or other adhesive materials.
In addition, the reverse conducting power chip 300 is electrically connected with the driving chip 211 of the control side frame 210, which includes that the reverse conducting power chip 300 is directly electrically connected with the driving chip 211 through the conductive member 600, and also includes that the reverse conducting power chip 300 is electrically connected with the control side frame 210 through the conductive member 600, and the control side frame 210 is electrically connected with the driving chip 211 through the conductive structure to realize indirect electrical connection between the reverse conducting power chip 300 and the driving chip 211.
In addition, the control side frame 210 is separately disposed from the substrate 100, the power side frame 220 may be pre-fixed to the substrate 100 by means of solder paste printing or laser welding, and the reverse-conduction power chip 300 may be connected to the substrate 100 by means of solder paste printing, and the connecting rod 230 is disposed between the control side frame 210 and the power side frame 220, and the connecting rod 230 is used for pressing the substrate 100 during the manufacturing process, so as to avoid overflow of molding compound on the surface of the substrate 100, and thus the probability of occurrence of flash defect on the surface of the substrate 100 is low.
It should be noted that, the jumper area 120 is closer to the power side frame 220 than the control side frame 210 means that the distance between the jumper area 120 and the power side frame 220 is smaller than the distance between the jumper area 120 and the control side frame 210, that is, the distance between the jumper area 120 and the power side frame 220 may be smaller. The reverse-conduction power chip 300 is mounted on the conductive area 110 and located on a side of the link 230 facing away from the power side frame 220, and a side of the link 230 facing away from the power side frame 220 is a side of the link 230 facing the control side frame 210, that is, the reverse-conduction power chip 300 is located between the link 230 and the control side frame 210.
For example, as shown in fig. 2, 3, 5, 7 and 9, the substrate 100 is provided with a first boundary line L1, a second boundary line L2 and a center line X, the first boundary line L1, the second boundary line L2 and the center line X extend along the second direction of the substrate 100, the distances from the center line X to opposite sides of the first direction of the substrate 100 are the same, the first boundary line L1 is located between the center line X and the control side frame 210, the second boundary line L2 is located between the center line X and the power side frame 220, the dimension of the substrate 100 in the first direction is assumed to be D1, i.e., the width of the substrate 100 is D1, the distance between the first boundary line L1 and the center line X is D2, the distance between the second boundary line L2 and the center line X is D2, wherein D2 is 1/8 of D1, and the link 230 is located between the first boundary line L1 and the second boundary line L2 in the first direction of the substrate 100. In other words, the link 230 is located in the central region of the substrate 100 in the first direction of the substrate 100, and the reverse-conduction power chip 300 is located in the region between the first boundary line L1 and the control-side frame 210 in the first direction of the substrate 100.
In this way, the pressure of the link 230 against the substrate 100 can be uniformly dispersed in the first direction, and the length of the conductive member 600 between the reverse-conduction type power chip 300 and the driving chip 211 of the control side frame 210 is not increased.
According to the intelligent power module 1 of the embodiment of the invention, the substrate 100 is provided with the conductive area 110 and the jumper area 120 which are spaced from each other, the frame 200 comprises the control side frame 210, the power side frame 220 and the connecting rod 230, the connecting rod 230 is connected with the substrate 100, wherein the connecting rod 230 can be welded with the substrate 100 through solder paste so as to pre-position the frame 200 and the substrate 100, the control side frame 210 and the power side frame 220 are respectively arranged on two opposite sides of the substrate 100, the conductive area 110 and the jumper area 120 are positioned between the power side frame 220 and the control side frame 210, the reverse-conduction power chip 300 is mounted on the conductive area 110 and positioned on one side of the connecting rod 230 which is opposite to the power side frame 220, and the reverse-conduction power chip 300 is electrically connected with the driving chip 211 of the control side frame 210. In this way, the conductive region 110 of the substrate 100 may be used to position and mount the reverse-conducting power chip 300 and make electrical connection with the reverse-conducting power chip 300.
The intelligent power module 1 has the advantages of small chip area and thermal resistance, low cost, low junction temperature fluctuation and the like by adopting the reverse conducting type power chip 300 integrated with the power chip (Insulated Gate Bipolar Transistor, IGBT) and the flywheel diode (FRD).
In addition, since the reverse conducting type power chip 300 is located at one side of the link 230 opposite to the power side frame 220, the reverse conducting type power chip 300 can be electrically connected with the control side frame 210 through the conductive member 600, and the conductive member 600 can be a lead wire or copper bonding, since the reverse conducting type power chip 300 is located between the link 230 and the control side frame 210, the conductive member 600 for connecting the reverse conducting type power chip 300 and the control side frame 210 does not extend to the position of the link 230, the conductive member 600 between the reverse conducting type power chip 300 and the control side frame 210 is not easy to interfere with the link 230 in position, thereby being capable of avoiding the occurrence of the conditions such as the conductive member 600 being crushed, deformed, broken or short-circuited, and being beneficial to improving the electricity safety.
In addition, the jumper region 120 is disposed more adjacent to the power side frame 220 than the control side frame 210 and is electrically connected to the power side frame 220, and the reverse-conduction type power chip 300 is electrically connected to the jumper region 120, so that the reverse-conduction type power chip 300 can be electrically connected between the conductive member 600 and the jumper region 120 after being assembled in place, and the jumper region 120 is disposed more adjacent to the power side frame 220 than the control side frame 210 and is electrically connected to the driving chip 211 of the power side frame 220.
In this way, the reverse conducting power chip 300 can be electrically connected with the jumper area 120 through the conductive piece 600, and the jumper area 120 is electrically connected with the power side frame 220 through the conductive piece 600, so that the extending direction of the conductive piece 600 between the reverse conducting power chip 300 and the power side frame 220 can be changed by utilizing the jumper area 120, and when the reverse conducting power chip 300 and the power side frame 220 can be normally electrically conducted, the position interference between the conductive piece 600 between the reverse conducting power chip 300 and the power side frame 220 and the connecting rod 230 can be avoided, and the situations of the conductive piece 600 being pressed, deformed, broken or short-circuited are further avoided, so that the electricity safety is improved.
Moreover, the jumper region 120 may be closer to the power side frame 220, and a distance between a side of the jumper region 120 close to the power side frame 220 and the power side frame 220 may be closer than a distance between the link 230 and the power side frame 220, and the conductive member 600 for connecting the power side frame 220 and the jumper region 120 only needs to extend to the jumper region 120 without extending to the link 230, so that the conductive member 600 connected to the power side frame 220 and the jumper region 120 does not interfere with the link 230 in position, thereby achieving electrical connection of the jumper region 120 and the power side frame 220.
In this way, the intelligent power module 1 according to the embodiment of the invention can avoid the position interference of the conductive member 600 and the connecting rod 230 between the reverse conduction type power chip 300 and the power side frame 220 and avoid short circuit or disconnection while avoiding the flash on the surface of the module.
In some embodiments of the present invention, as shown in fig. 1, 4, 6 and 8, the control side frame 210 and the power side frame 220 are disposed at opposite sides of the substrate 100 in a first direction, and the link 230 is connected to opposite sides of the substrate 100 in a second direction perpendicular to the first direction.
It should be noted that, the first direction may be a length direction of the intelligent power module 1, and the second direction may be a width direction of the intelligent power module 1. The direction indicated by the arrow a is a first direction, and the direction indicated by the arrow B is a second direction.
In this way, the link 230 may be connected to opposite sides of the substrate 100 in the second direction so that the substrate 100 and the frame 200 may be fixed together without the link 230 being positionally interfered with the control side frame 210 or the power side frame 220.
In addition, in a plane perpendicular to the first direction, the front projection of at least a portion of the jumper region 120 and the front projection of the link 230 are offset in the second direction, and at least a portion of the jumper region 120 is electrically connected to the reverse-conducting power chip 300.
That is, the portion of the jumper area 120, which is staggered from the connecting rod 230 in the second direction, is electrically connected with the reverse conducting power chip 300, and it should be noted that the reverse conducting power chip 300 and the jumper area 120 are arranged along the first direction, that is, the conductive member 600 for connecting the reverse conducting power chip 300 and the jumper area 120 needs to extend along the first direction, so that the conductive member 600 for connecting the reverse conducting power chip 300 and the jumper area 120 may be staggered from the connecting rod 230 in the second direction, thereby avoiding the position interference between the conductive member 600 for connecting the reverse conducting power chip 300 and the jumper area 120 and the connecting rod 230, effectively avoiding the occurrence of the situations such as the conductive member 600 is pressed, deformed, broken or shorted by the connecting rod 230, more reliably improving the safety and stability of the electrical connection, and more stable operation of the intelligent power module 1.
In some embodiments of the present invention, as shown in fig. 1-9, the reverse conducting power chips 300 are plural and arranged at intervals along the second direction, the substrate 100 is provided with plural conductive areas 110 and at least one jumper area 120, and each conductive area 110 is provided with at least one reverse conducting power chip 300. Wherein at least one reverse conducting power chip 300 closest to the conductive region 110 of the link 230 is electrically connected to the jumper region 120.
Wherein at least one reverse-conducting power chip 300 closest to the conductive region 110 of the link 230 is electrically connected to the jumper region 120, meaning that the reverse-conducting power chip 300 in the conductive region 110 closest to the link 230 or the reverse-conducting power chips 300 in the plurality of conductive regions 110 are electrically connected to the jumper region 120.
That is, the reverse-conducting power chip 300 in the at least one conductive region 110 closest to the link 230 is required to be electrically connected through the jumper region 120 and then electrically connected through the jumper region 120 and the power side frame 220 in the second direction, it is understood that the reverse-conducting power chip 300 in the conductive region 110 closest to the link 230 is closest to the link 230, and the conductive element 600 is most likely to interfere with the link 230 when electrically connected to the power side frame 220 through the conductive element 600, so that by electrically connecting the reverse-conducting power chip 300 in the at least one conductive region 110 closest to the link 230 to the jumper region 120, the conductive element 600 between the reverse-conducting power chip 300 and the power side frame 220, which is closer to the link 230, is prevented from being interfered by the link 230, and thus, the occurrence of the situation that the conductive element 600 is broken, deformed, broken or shorted, etc. is prevented.
In some embodiments of the present invention, as shown in fig. 1-9, the plurality of reverse conducting power chips 300 includes a low voltage reverse conducting power chip 310 and a high voltage reverse conducting power chip 320, the plurality of conductive regions 110 includes a low voltage conductive region 111 and a high voltage conductive region 114, the low voltage reverse conducting power chip 310 is mounted on the low voltage conductive region 111, and the high voltage reverse conducting power chip 320 is mounted on the high voltage conductive region 114. Wherein the low voltage reverse conducting power chip 310 closest to the low voltage conductive region 111 of the link 230 is electrically connected to the jumper region 120.
The low voltage conductive area 111 and the high voltage conductive area 114 may be arranged along a length direction (i.e., a second direction) of the intelligent power module 1, so that the low voltage reverse conductive power chip 310 and the high voltage reverse conductive power chip 320 may be arranged along the length direction (i.e., the second direction) of the intelligent power module 1, thereby improving a space utilization rate of the intelligent power module 1 and reducing a volume of the intelligent power module 1, and the low voltage jumper area 120 is connected with the low voltage reverse conductive power chip 310, and the high voltage jumper area 120 is connected with the high voltage reverse conductive power chip 320, so that the intelligent power module 1 may implement normal functions, for example, the intelligent power module 1 may perform conversion between ac and dc.
In addition, the low voltage reverse conducting power chip 310 closest to the low voltage conductive area 111 of the connecting rod 230 is electrically connected with the jumper area 120, so that the low voltage reverse conducting power chip 310 in the low voltage conductive area 111 closest to the connecting rod 230 can be electrically connected with the jumper area 120 first and then electrically connected with the power side frame 220 through the jumper area 120, thereby avoiding the position interference between the conductive piece 600 and the connecting rod 230 between the low voltage reverse conducting power chip 310 in the low voltage conductive area 111 closest to the connecting rod 230 and the power side frame 220, and better avoiding the conductive piece 600 from being broken or deformed, and further avoiding the occurrence of the conditions such as open circuit or short circuit.
In some embodiments of the present invention, as shown in fig. 1-9, the low voltage conductive area 111 closest to the link 230 is provided with a notch 112, and the jumper area 120 is located within the notch 112. In this way, the layout of the jumper region 120 and the low-voltage conductive region 111 is more compact, which is beneficial to reducing the overall size of the jumper region 120 and the low-voltage conductive region 111, so that the size of the substrate 100 can be reduced, which is beneficial to reducing the volume of the intelligent power module 1.
In some embodiments of the present invention, as shown in fig. 1-7, the low-voltage conductive area 111 closest to the connecting rod 230 is provided with the escape opening 113 for escaping the connecting rod 230 at one side in the second direction, and the notch 112 penetrates through the low-voltage conductive area 111 and is toward the escape opening 113 in the first direction, that is, the notch 112 is communicated with the escape opening 113.
That is, the avoidance port 113 closest to the low-voltage conductive area 111 of the connecting rod 230 is used for avoiding the connecting rod 230, and the connecting rod 230 can extend into the avoidance port 113 and cannot interfere with the notch 112, so that the connecting rod 230 cannot interfere with the jumper area 120 in the notch 112, the probability of interference between the connecting rod 230 and the jumper area 120 is further reduced, and further the problems of open circuit or short circuit and the like are avoided.
Moreover, the notch 112 penetrates through the low-voltage conductive area 111 to face one side of the avoidance port 113 in the first direction, that is, the notch 112 and the avoidance port 113 can be communicated, so that the notch 112 and the avoidance port 113 can form a communicated structure, the structure of the notch 112 and the avoidance port 113 is facilitated to be simplified, the notch 112 and the avoidance port 113 are conveniently machined in the low-voltage conductive area 111, and the machining process is simpler.
In some embodiments of the present invention, as shown in fig. 1-5, the notch 112 extends through the low voltage conductive region 111 on a side of the second direction toward the link 230. In this way, the notch 112 may penetrate through the edge of the low-voltage conductive area 111 facing the connecting rod 230 in the second direction, which is beneficial to simplifying the structure of the notch 112, so that when the notch 112 is processed, the edge of the low-voltage conductive area 111 facing the connecting rod 230 in the second direction can be processed in a direction away from the connecting rod 230, so that the notch 112 is constructed, that is, the side of the notch 112, which is close to the connecting rod 230 in the second direction, may not be provided with a side edge, the structure of the notch 112 is simpler, and the processing steps of the notch 112 are simplified, which is beneficial to improving the production efficiency of the intelligent power module 1.
In some embodiments of the present invention, as shown in fig. 6 and 7, the notch 112 penetrates a side of the low voltage conductive region 111 that is facing the power side frame 220 in the first direction.
Therefore, the notch 112 may penetrate through an edge of the low-voltage conductive area 111 facing the power side frame 220 in the first direction, so that the structure of the notch 112 is further simplified, and when the notch 112 is processed, the notch 112 may be further formed by processing along the edge of the low-voltage conductive area 111 facing the power side frame 220 in the first direction in a direction away from the power side frame 220, i.e. a side of the notch 112 near the power side frame 220 in the first direction may not be provided with a side edge, so that the structure of the notch 112 is simpler, the processing steps of the notch 112 are further simplified, and the production efficiency of the intelligent power module 1 is higher.
In some embodiments of the present invention, as shown in fig. 6 and 7, the notch 112 may penetrate through both a side of the low voltage conductive region 111 facing the power side frame 220 in the first direction and a side of the low voltage conductive region 111 facing the link 230 in the second direction.
In other embodiments of the present invention, as shown in fig. 8 and 9, the sidewalls of the notch 112 are joined and closed to each other. For example, the notch 112 may be disposed between the connecting rod 230 and the power side frame 220 in the first direction, and the notch 112 is disposed at an interval from a side of the low voltage conductive area 111 facing the connecting rod 230, and the notch 112 is not communicated with the avoiding opening 113 in the second direction, so that the notch 112 may be configured as a structure with side walls closed to each other, which is beneficial to improving structural strength of the notch 112, avoiding deformation of the notch 112, so as to facilitate arrangement of the jumper area 120, and the notch 112 may better keep an interval with the connecting rod 230, further avoiding position interference between the connecting rod 230 and the jumper area 120, effectively avoiding position interference between the connecting rod 230 and the conductive member 600, and further avoiding occurrence of pressure break, deformation, disconnection or short circuit of the conductive member 600 by the connecting rod 230.
In some embodiments of the present invention, as shown in fig. 8 and 9, the number of the low-voltage reverse-conduction power chips 310 is plural, the number of the low-voltage conductive areas 111 is plural, and the plurality of the low-voltage reverse-conduction power chips 310 are installed in the plurality of the low-voltage conductive areas 111 in a one-to-one correspondence manner, wherein each of the low-voltage conductive areas 111 is provided with a notch 112, each notch 112 is internally provided with a jumper area 120, and the low-voltage reverse-conduction power chips 310 are electrically connected with the jumper areas 120 of the low-voltage conductive areas 111.
In this way, the low-voltage reverse-conduction power chips 310 are all electrically connected with the power side frame 220 through the jumper areas 120, so that interference between the conductive members 600 of the low-voltage reverse-conduction power chips 310 and the jumper areas 120 of the adjacent low-voltage conductive areas 111 can be avoided, and the reliability of electrical connection is improved.
In some embodiments of the present invention, as shown in fig. 8 and 9, the high voltage conductive region 114 is provided with a notch 112, and a jumper region 120 is provided in the notch 112, and the high voltage reverse conductive power chip 320 is electrically connected to the jumper region 120.
That is, in some embodiments of the present invention, not only the notch 112 may be disposed in the low voltage conductive region 111 to arrange the notch 112 in the low voltage conductive region 111, so as to facilitate the electrical connection between the low voltage reverse conducting power chip 310 and the jumper region 120 in the low voltage conductive region 111, and then the electrical connection between the jumper region 120 and the power side frame 220, so as to avoid the position interference between the conductive member 600 and the connecting rod 230 for connecting the low voltage reverse conducting power chip 310 and the power side frame 220, but also the notch 112 may be disposed in the high voltage conductive region 114, so as to arrange the notch 112 in the high voltage conductive region 114, thereby facilitating the electrical connection between the high voltage reverse conducting power chip 320 and the jumper region 120 in the high voltage conductive region 114, and then the electrical connection between the jumper region 120 and the power side frame 220, so as to avoid the position interference between the conductive member 600 and the connecting the low voltage reverse conducting power chip 310 and the power side frame 220, and the conductive member 600 for connecting the high voltage reverse conducting power chip 320 and the power side frame 220, so as to avoid the position interference between the conductive member 600 and the power side frame 220.
Further, as shown in fig. 8 and 9, the side walls of the notch 112 are connected to each other to be closed. In this way, the structural strength of the notch 112 is improved, deformation of the notch 112 is avoided, so that the jumper region 120 is arranged in the notch 112 of the high-voltage conductive region 114, the notch 112 and other components are better kept at intervals, and the occurrence of the conditions of the conductive member 600 such as being crushed, deformed, broken or short-circuited is more effectively avoided.
In some embodiments of the present invention, as shown in fig. 1-9, the high voltage reverse conducting power chips 320 are plural, the high voltage conductive area 114 is one, and the plural high voltage reverse conducting power chips 320 are all mounted on the high voltage conductive area 114. In this way, the difficulty in arranging the high-voltage conductive areas 114 can be reduced, the substrate 100 only needs to be provided with one high-voltage conductive area 114, the high-voltage conductive areas 114 corresponding to the high-voltage reverse-conduction power chips 320 are not required to be arranged, the processing difficulty of the substrate 100 is greatly reduced, the production cost is reduced, and the circuit performance of the intelligent power module 1 is also optimized.
In addition, the high-voltage conductive area 114 is provided with a plurality of notches 112, the notches 112 are arranged at intervals along the second direction, and the number of the notches 112 is the same as the number of the high-voltage reverse-conduction power chips 320, so that each high-voltage reverse-conduction power chip 320 can be electrically connected with the power side frame 220 through one jumper area 120, and each high-voltage reverse-conduction power chip 320 can be reliably connected with the power side frame 220.
In some embodiments of the present invention, as shown in fig. 8, the substrate 100 is provided with a plurality of jumper areas 120, and a plurality of reverse-conducting power chips 300 are connected to the plurality of jumper areas 120 in a one-to-one correspondence.
The reverse conducting power chips 300 are connected with the jumper areas 120 in a one-to-one correspondence manner, so that each reverse conducting power chip 300 can be electrically connected with the power side frame 220 through one jumper area 120, each reverse conducting power chip 300 can be reliably connected with the power side frame 220, the electric connection stability of the intelligent power module 1 is improved, and the operation is more reliable.
In some embodiments of the present invention, as shown in fig. 1, 4, 6 and 8, the number of the low-voltage reverse-conduction power chips 310 is three, the number of the low-voltage conductive areas 111 is three, and the three low-voltage reverse-conduction power chips 310 are mounted on the three low-voltage conductive areas 111 in a one-to-one correspondence. Three high voltage reverse conducting power chips 320 are provided, the number of the high voltage conducting areas 114 is one, and all three high voltage reverse conducting power chips 320 are installed in the high voltage conducting areas 114.
For example, three low-voltage reverse-conducting power chips 310 may be arranged along the length direction (i.e., the second direction) of the intelligent power module 1, and three high-voltage reverse-conducting power chips 320 may be arranged along the length direction (i.e., the second direction) of the intelligent power module 1. In this way, the intelligent power module 1 can form a three-phase bridge circuit, and the low-voltage reverse-conduction type power chip 310 and the high-voltage reverse-conduction type power chip 320 are more convenient to be connected with the driving chip 211 respectively, so that the layout of the intelligent power module 1 is convenient.
In some embodiments of the present invention, as shown in fig. 1, 4, 6, and 8, the jumper section 120 is located on a side of the link 230 facing away from the control side frame 210.
In this way, the jumper section 120 may be closer to the power side frame 220, i.e., the distance between the side of the jumper section 120 close to the power side frame 220 and the power side frame 220 may be closer than the distance between the link 230 and the power side frame 220, so that the conductive member 600 for connecting the power side frame 220 and the jumper section 120 only needs to extend to the side of the jumper section 120 facing away from the control side frame 210, and does not need to extend to the link 230, and thus the conductive member 600 for connecting the power side frame 220 and the jumper section 120 does not interfere with the link 230 in position, and the occurrence of the situation that the conductive member 600 for connecting the power side frame 220 and the jumper section 120 is crushed, deformed, broken or shorted is better avoided.
In some embodiments of the present invention, as shown in fig. 10 and 11, the smart power module 1 further includes a plastic package 400.
The substrate 100, the frame 200 and the reverse conducting power chip 300 are packaged in the plastic package 400, one surface of the substrate 100 facing away from the reverse conducting power chip 300 is flush with the surface of the plastic package 400 and is exposed out of the plastic package 400, the control side frame 210 is provided with a control side pin 212, the power side frame 220 is provided with a power side pin 221, and the control side pin 212 and the power side pin 221 extend out of the plastic package 400.
The control-side pins 212 may be plural, the power-side pins 221 may be plural, the control-side pins 212 are electrically connected to the low-voltage reverse-conduction type power chip 310 and the high-voltage reverse-conduction type power chip 320 through the driving chip 211, the control-side pins 212 extend out of the molding body 400 from one of two opposite sides in the first direction, the power-side pins 221 are electrically connected to the low-voltage reverse-conduction type power chip 310 and the high-voltage reverse-conduction type power chip 320, and the power-side pins 221 extend out of the molding body 400 from the other of two opposite sides of the molding body 400 in the first direction.
The plurality of control side pins 212 and the plurality of power side pins 221 may be made of metal copper or copper alloy, or the plurality of control side pins 212 and the plurality of power side pins 221 may be made of other materials having good electrical conductivity. The plastic package body 400 can be made of an epoxy resin material, the epoxy resin material has certain compressive strength and insulativity, the epoxy resin material can provide physical and electrical protection to prevent the chip from being impacted by external environment, and the plastic package body 400 can be made of other materials with high compressive strength and good insulativity.
Therefore, the plastic package 400 is provided to package the driving chip 211, the low-voltage reverse-conduction type power chip 310, the high-voltage reverse-conduction type power chip 320 and the substrate 100, so that the driving chip 211, the low-voltage reverse-conduction type power chip 310, the high-voltage reverse-conduction type power chip 320 and the substrate 100 can be positioned and fixed, damage to the driving chip 211, the low-voltage reverse-conduction type power chip 310, the high-voltage reverse-conduction type power chip 320 and the substrate 100 is avoided, and electrical conduction between the driving chip 211, the low-voltage reverse-conduction type power chip 310, the high-voltage reverse-conduction type power chip 320 and the substrate 100 and the outside is prevented, thereby being beneficial to improving circuit safety.
In addition, the control side pins 212 and the power side pins 221 extend out of the plastic package body 400, the control side frame 210 can connect the driving chip 211 with external electrical components through the plurality of control side pins 212, and the power side frame 200 can connect the driving chip 211 with external electrical components through the plurality of power side pins 221, so that connection is more convenient.
In some embodiments of the present invention, as shown in fig. 1, 4, 6 and 8, the control side pins 212 are connected to the circuit board 500, the driving chip 211 is mounted on the circuit board 500, the driving chip 211 is packaged in the plastic package 400, and by disposing the circuit board 500, a plurality of control side pins 212 may be soldered on the circuit board 500 to electrically connect with the driving chip 211, and the circuit integration of the circuit board 500 is higher.
In other embodiments of the present invention, the control side pins 212 are connected with an integrally formed base island, the driving chip 211 is mounted on the base island, the driving chip 211 is encapsulated in the plastic package 400, and by providing the base island, the control side pins 212 can be electrically connected with the driving chip 211 through the base island, and the base island can be integrally formed with the control side frame 210, so that the integration level of the base island and the control side frame 210 can be improved, and the mounting is more convenient and faster.
In some embodiments of the present invention, as shown in fig. 10, a power side frame 220 is connected to a substrate 100, and the substrate 100 includes a conductive layer 130, an insulating layer 140, and a heat dissipation layer 150.
The conductive layer 130 and the heat dissipation layer 150 are respectively disposed on two side surfaces of the insulating layer 140, the jumper region 120 and the conductive region 110 are disposed on the conductive layer 130, the jumper region 120 and the conductive region 110 can be manufactured on the conductive layer 130 through etching, bonding, sintering and other processes, the connecting rod 230 is connected to the conductive layer 130, and the heat dissipation layer 150 is exposed from the plastic package 400.
Wherein, the conductive layer 130 and the heat dissipation layer 150 can be made of metal, such as metal copper or copper alloy, of course, the conductive layer 130 and the heat dissipation layer 150 are not limited to metal, the conductive layer 130 and the heat dissipation layer 150 can be made of other materials, for example, the conductive layer 130 can be made of material with good electrical conductivity and thermal conductivity, the heat dissipation layer 150 can be made of material with good thermal conductivity, the insulating layer 140 can be made of insulating material with good thermal conductivity, such as ceramic, of course, the insulating layer 140 can also be made of other materials with insulating property, such as AL 2 O 3 AlN is also possible.
Therefore, the conductive layer 130 of the substrate 100 can be used for bearing the reverse conduction type power chip 300 and connecting the control side frame 210 and the power side frame 220, and by arranging the insulating layer 140, the insulating layer 140 can separate the conductive layer 130 and the heat dissipation layer 150, and avoid electric connection between the heat dissipation layer 150 and the substrate 100, so that the reverse conduction type power chip 300 can be prevented from being electrically conducted with the outside through the heat dissipation layer 150, the electric safety of the intelligent power module 1 is improved, in addition, the heat dissipation layer 150 can dissipate heat of the substrate 100 and the reverse conduction type power chip 300, the temperature of the substrate 100 and the reverse conduction type power chip 300 is reduced, and further, when the intelligent power module 1 is prevented from running, the reverse conduction type power chip 300 generates heat accumulation, and the safety is ensured.
In some embodiments of the present invention, as shown in fig. 11, the power side frame 220 is connected to the substrate 100, the substrate 100 includes a conductive layer 130 and an insulating heat dissipation layer 160, the substrate 100 includes the conductive layer 130 and the insulating heat dissipation layer 160, the jumper region 120 and the conductive region 110 are disposed on the conductive layer 130, the insulating heat dissipation layer 160 is disposed on a surface of the conductive layer 130 away from the reverse conducting power chip 300, the connecting rod 230 is connected to the conductive layer 130, and the insulating heat dissipation layer 160 is exposed from the plastic package 400.
The conductive layer 130 may be metal, such as copper or copper alloy, however, the conductive layer 130 is not limited to metal, and the conductive layer 130 may be made of other materials, for example, the conductive layer 130 may be made of a material having good electrical conductivity and thermal conductivity. The insulating heat dissipation layer 160 can be of heat conductionGood insulating materials, such as ceramics, although insulating heat dissipation layer 160 may be made of other insulating materials, such as AL 2 O 3 AlN is also possible.
Therefore, the conductive layer 130 of the substrate 100 can be used for bearing the reverse conduction type power chip 300 and connecting the control side frame 210 and the power side frame 220, and the insulating layer 140 can isolate the conductive layer 130 by arranging the insulating heat dissipation layer 160, so that the conductive layer 130 is prevented from being electrically connected with the outside, the electrical safety of the intelligent power module 1 is improved, in addition, the insulating heat dissipation layer 160 can dissipate heat of the substrate 100 and the reverse conduction type power chip 300, the temperature of the substrate 100 and the reverse conduction type power chip 300 is reduced, and further, the reverse conduction type power chip 300 is prevented from generating heat accumulation and the safety is ensured when the intelligent power module 1 operates.
An electronic device according to an embodiment of the present invention, including the intelligent power module 1 according to the above-described embodiment of the present invention, is described below with reference to the accompanying drawings.
According to the electronic device of the embodiment of the present invention, by using the intelligent power module 1 according to the above-described embodiment of the present invention, it is possible to avoid the occurrence of position interference between the conductive member 600 and the link 230 between the reverse-conduction type power chip 300 and the power side frame 220 while avoiding the flash on the module surface, thereby avoiding the short circuit or the open circuit.
Other constructions and operations of the intelligent power module 1 and the electronic device having the same according to the embodiment of the present invention are known to those of ordinary skill in the art, and will not be described in detail herein.
In the description herein, reference to the term "particular embodiment," "particular example," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.

Claims (16)

1. An intelligent power module, comprising:
the circuit comprises a substrate, a first electrode and a second electrode, wherein the substrate is provided with a conductive area and a jumper area which are spaced from each other;
the frame comprises a control side frame, a power side frame and a connecting rod, wherein the control side frame and the power side frame are respectively arranged on two opposite sides of the substrate, the conducting area and the jumper area are positioned between the power side frame and the control side frame, the jumper area is more adjacent to the power side frame relative to the control side frame and is electrically connected with the power side frame, and the connecting rod is connected with the substrate;
the reverse conduction type power chip is arranged in the conductive area and is positioned on one side of the connecting rod, which is opposite to the power side frame, and the reverse conduction type power chip is respectively and electrically connected with the jumper area and the driving chip of the control side frame.
2. The intelligent power module according to claim 1, wherein the control side frame and the power side frame are disposed on opposite sides of the substrate in a first direction;
the connecting rods are connected to two opposite sides of the substrate in a second direction perpendicular to the first direction;
And on a plane perpendicular to the first direction, the orthographic projection of at least one part of the jumper area and the orthographic projection of the connecting rod are staggered in the second direction, and the at least one part of the jumper area is electrically connected with the reverse-conduction power chip.
3. The intelligent power module according to claim 2, wherein the reverse-conduction power chips are plural and are arranged at intervals along the second direction, the substrate is provided with plural conductive areas and at least one jumper area, and each conductive area is provided with at least one reverse-conduction power chip;
wherein at least one of the reverse conducting power chips closest to the conductive region of the link is electrically connected to the jumper region.
4. The intelligent power module of claim 3, wherein the plurality of reverse-conducting power chips comprises a low voltage reverse-conducting power chip and a high voltage reverse-conducting power chip;
the plurality of conductive areas comprise a low-voltage conductive area and a high-voltage conductive area, the low-voltage reverse-conduction type power chip is arranged in the low-voltage conductive area, and the high-voltage reverse-conduction type power chip is arranged in the high-voltage conductive area;
and the low-voltage reverse conducting type power chip closest to the low-voltage conducting area of the connecting rod is electrically connected with the jumper area.
5. The intelligent power module according to claim 4, wherein a low voltage conductive area closest to the link is provided with a notch, and the jumper area is located in the notch.
6. The intelligent power module according to claim 5, wherein a side of the low-voltage conductive area closest to the connecting rod in the second direction is provided with an avoidance port for avoiding the connecting rod, and the notch is communicated with the avoidance port.
7. The intelligent power module according to claim 6, wherein the notch penetrates through a side of the low voltage conductive area facing the connecting rod in the second direction and/or the notch penetrates through a side of the low voltage conductive area facing the power side frame in the first direction.
8. The smart power module of claim 5 wherein the sidewalls of the notch are closed by being connected to each other.
9. The intelligent power module according to claim 5, wherein the plurality of low-voltage reverse-conduction power chips are provided, the plurality of low-voltage conductive areas are provided, and the plurality of low-voltage reverse-conduction power chips are arranged in the plurality of low-voltage conductive areas in a one-to-one correspondence manner;
and each low-voltage conductive area is provided with a notch, each notch is internally provided with a jumper area, and the low-voltage reverse-conduction power chip is electrically connected with the jumper area of the low-voltage conductive area.
10. The intelligent power module according to claim 4, wherein the plurality of high voltage reverse conducting power chips are provided, the high voltage conducting area is one and the plurality of high voltage reverse conducting power chips are all arranged in the high voltage conducting area;
the high-voltage conductive area is provided with a plurality of gaps, the gaps are distributed at intervals along the second direction, each gap is internally provided with a jumper area, the number of the gaps is the same as that of the high-voltage reverse-conduction power chips, and each high-voltage reverse-conduction power chip is electrically connected with the corresponding jumper area.
11. The smart power module of claim 10 wherein the sidewalls of the notch are closed by being connected to each other.
12. The intelligent power module according to any one of claims 4-11, wherein the number of the low-voltage reverse-conduction power chips is three, the number of the low-voltage conductive areas is three, and the three low-voltage reverse-conduction power chips are installed in the three low-voltage conductive areas in a one-to-one correspondence manner;
the number of the high-voltage reverse-conduction type power chips is three, the number of the high-voltage conductive areas is one, and the three high-voltage reverse-conduction type power chips are all arranged in the high-voltage conductive areas.
13. The intelligent power module according to any one of claims 1-11, wherein the jumper section is located on a side of the link that faces away from the control side frame.
14. The smart power module of any one of claims 1-11 further comprising:
the substrate, the frame and the reverse conducting power chip are packaged in the plastic package body, one surface of the substrate, which is opposite to the reverse conducting power chip, is flush with the surface of the plastic package body and is exposed out of the plastic package body, the control side frame is provided with a control side pin, the power side frame is provided with a power side pin, and the control side pin and the power side pin extend out of the plastic package body;
the control side pins are connected with a circuit board, the driving chip is mounted on the circuit board, and the driving chip is packaged in the plastic package body; or alternatively
The control side pin is connected with an integrally formed base island, the driving chip is mounted on the base island, and the driving chip is packaged in the plastic package body.
15. The smart power module of claim 14 wherein the power side frame is connected to the substrate;
The substrate comprises a conducting layer, an insulating layer and a radiating layer, wherein the conducting layer and the radiating layer are respectively arranged on the surfaces of two sides of the insulating layer, the jumper area and the conducting area are arranged on the conducting layer, the connecting rod is connected to the conducting layer, the radiating layer is exposed from the plastic package body, or the substrate comprises the conducting layer and the insulating radiating layer, the jumper area and the conducting area are arranged on the conducting layer, the insulating radiating layer is arranged on one surface of the conducting layer, which is opposite to the reverse-conduction power chip, the connecting rod is connected to the conducting layer, and the insulating radiating layer is exposed from the plastic package body.
16. An electronic device comprising an intelligent power module according to any of claims 1-15.
CN202310482754.4A 2023-04-28 2023-04-28 Intelligent power module and electronic equipment with same Active CN116646326B (en)

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CN110176451A (en) * 2019-05-13 2019-08-27 珠海格力电器股份有限公司 Power module and its packaging method
CN214176033U (en) * 2021-01-15 2021-09-10 无锡华润安盛科技有限公司 Semiconductor packaging structure
CN115732490A (en) * 2022-11-17 2023-03-03 海信家电集团股份有限公司 Intelligent power module and device

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JP6261309B2 (en) * 2013-12-02 2018-01-17 三菱電機株式会社 Power module

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Publication number Priority date Publication date Assignee Title
CN106558567A (en) * 2015-09-29 2017-04-05 比亚迪股份有限公司 SPM and preparation method thereof
CN110176451A (en) * 2019-05-13 2019-08-27 珠海格力电器股份有限公司 Power module and its packaging method
CN214176033U (en) * 2021-01-15 2021-09-10 无锡华润安盛科技有限公司 Semiconductor packaging structure
CN115732490A (en) * 2022-11-17 2023-03-03 海信家电集团股份有限公司 Intelligent power module and device

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