CN115732490A - Intelligent power module and device - Google Patents
Intelligent power module and device Download PDFInfo
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- CN115732490A CN115732490A CN202211442181.4A CN202211442181A CN115732490A CN 115732490 A CN115732490 A CN 115732490A CN 202211442181 A CN202211442181 A CN 202211442181A CN 115732490 A CN115732490 A CN 115732490A
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- 239000004411 aluminium Substances 0.000 description 5
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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Abstract
The invention discloses an intelligent power module and equipment, wherein the intelligent power module comprises: the packaging structure comprises a packaging body, a control IC chip and a plurality of power chips are arranged in the packaging body, each of the plurality of power chips is electrically connected with the control IC chip, a plurality of contacts are arranged on the control IC chip, the number of at least one contact is at least two, and the contacts are electrically connected with the power chips; the power pins are led out from one side of the packaging body close to the power chip; and the control IC pin is led out from one side of the packaging body close to the control IC chip and is electrically connected with the contact. By arranging two contacts on the control IC chip layout, the power modules with the gates at different positions can be compatible, the problem of connection matching between the control IC chip and the power chip is efficiently solved, crossed wires are avoided, the compatibility of the control IC chip is improved, and the length of a bonding wire between the control IC chip and a control IC pin can be correspondingly reduced.
Description
Technical Field
The invention relates to the technical field of intelligent power modules, in particular to an intelligent power module and equipment.
Background
In the related art, when a type-selecting gate driver chip is used, it is often faced that although each function and parameter of the driver chip meets the requirement, the layout of the driver chip is mismatched with the layout of the power chip, so that the driver chip cannot be used. As shown in fig. 1, according to the design of the power module circuit, the HOx pad (high side gate driving output) of the gate driving chip is on the left side, the VSx pad (high side power supply ground) is on the right side, and the gate electrode (G pole) of the power chip is on the upper right side, the HOx of the driving chip needs to be connected to the gate electrode of the power chip, and the VSx of the driving chip needs to be connected to the emitter electrode of the power chip. Due to the mismatch problem, even if various functions and parameters of the driving chip are all met, the driving chip cannot be used, and the type selection is difficult.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention provides an intelligent power module, which can be compatible with power modules with grids at different positions by arranging two contacts on the layout of a control IC chip, effectively solves the problem of connection matching between the control IC chip and the power chip, and avoids cross lines.
The invention also provides equipment with the intelligent power module.
The intelligent power module according to the embodiment of the first aspect of the invention comprises: the packaging structure comprises a packaging body, a control IC chip and a plurality of power chips are arranged in the packaging body, each of the plurality of power chips is electrically connected with the control IC chip, a plurality of contacts are arranged on the control IC chip, the number of at least one contact is at least two, and the contacts are electrically connected with the power chips; the power pins are led out from one side of the packaging body close to the power chip, and each of the power chips is electrically connected with the corresponding power pin in the power pins through a conductive piece; and the control IC pin is led out from one side of the packaging body close to the control IC chip and is electrically connected with the contact.
According to the intelligent power module provided by the embodiment of the invention, by arranging two contacts on the layout of the control IC chip, the power module with the grid electrode at different positions can be compatible, the problem of connection matching between the control IC chip and the power chip is efficiently solved, crossed wires are avoided, the compatibility of the control IC chip is improved, and the length of a bonding wire between the control IC chip and a control IC pin can be correspondingly reduced.
According to some embodiments of the present invention, the control IC chip is a high-voltage control IC chip, the high-voltage control IC chip is provided with at least two high-side power supply ground contacts and a high-side door driving output contact, at least two high-side power supply ground contacts are disposed on two sides of the high-side door driving output contact, and at least one high-side power supply ground contact is electrically connected to the power chip; or, the control IC chip is high-pressure control IC chip, be provided with high side power supply ground contact and high side door drive output contact on the high-pressure control IC chip, high side door drive output contact is at least two, at least two high side door drive output contact set up in the both sides of high side door drive output contact, at least one high side door drive output contact with the power chip electricity is connected.
According to some embodiments of the invention, the high side power supply ground contact is two or the high side door drive output contacts are two.
According to some embodiments of the invention, the high side power supply ground contact is a three phase contact and the high side door drive output contact is a three phase contact.
According to some embodiments of the present invention, the control IC chip is a low-voltage control IC chip, the low-voltage control IC chip is provided with at least two ground contacts, and at least one of the ground contacts is electrically connected to the control IC pin.
According to some embodiments of the invention, at least two of the ground contacts are spaced apart on both sides of the low-voltage control IC chip in the longitudinal direction.
According to some embodiments of the present invention, the control IC chip is a low-voltage control IC chip, the low-voltage control IC chip is provided with at least two power supply contacts, and at least one of the power supply contacts is electrically connected to the control IC pin.
According to some embodiments of the invention, at least two power supply contacts are arranged on two adjacent sides of the low-voltage control IC chip at intervals, and a linx contact is clamped between the at least two power supply contacts.
According to some embodiments of the invention, the smart power module further comprises: a first electrical connector electrically connected between the power pin and a power chip; and, the smart power module further comprises: a second electrical connection electrically connected between the control IC chip and the control IC pin.
The device according to the embodiment of the second aspect of the invention comprises the intelligent power module and a controller, wherein the controller is electrically connected with the intelligent power module.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic structural diagram of a first embodiment of a smart power module in the prior art;
fig. 2 is a schematic structural diagram of a second embodiment of a smart power module in the prior art;
fig. 3 is a schematic structural diagram of an intelligent power module according to a first embodiment of the present invention;
FIG. 4 is a schematic diagram of a high voltage control IC chip according to a first embodiment of the present invention;
FIG. 5 is a schematic diagram of a high voltage control IC chip according to a first embodiment of the present invention;
fig. 6 is a schematic structural diagram of an intelligent power module according to a second embodiment of the invention;
fig. 7 is a schematic structural diagram of an intelligent power module according to a third embodiment of the invention;
fig. 8 is a schematic structural diagram of an intelligent power module according to a fourth embodiment of the invention;
fig. 9 is a schematic structural diagram of a low-voltage control IC chip according to a fourth embodiment of the present invention;
fig. 10 is a schematic structural diagram of a smart power module according to a fifth embodiment of the present invention;
fig. 11 is a schematic structural diagram of a low-voltage control IC chip according to a fifth embodiment of the present invention.
Reference numerals:
the prior art is as follows:
1', an intelligent power module; 200', a power chip; 300', a control IC chip;
the invention comprises the following steps:
1. an intelligent power module; 100. a package body; 200. a power chip; 300. a control IC chip; 310. a high voltage control IC chip; 311. a high side power supply ground contact; 312. a high side door driving output contact; 320. a low-voltage control IC chip; 321. a ground contact; 322. a power supply contact; 400. a power pin; 500. a control IC pin; 600. a bonding wire; 700. a second electrical connection.
Detailed Description
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", and the like, indicate orientations and positional relationships based on the orientations and positional relationships shown in the drawings, and are used merely for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the device or element so referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
In the description of the present invention, "the first feature" and "the second feature" may include one or more of the features.
In the description of the present invention, "a plurality" means two or more.
In the description of the present invention, the first feature being "on" or "under" the second feature may include the first and second features being in direct contact, and may also include the first and second features being in contact with each other not directly but through another feature therebetween.
In the description of the invention, "above", "over" and "above" a first feature in a second feature includes the first feature being directly above and obliquely above the second feature, or simply means that the first feature is higher in level than the second feature.
The following describes the smart power module 1 according to an embodiment of the present invention with reference to fig. 3-11, and the present invention also proposes an apparatus having the above-described smart power module 1.
Referring to fig. 3 to 11, the smart power module 1 according to the embodiment of the present invention includes: the package comprises a package body 100, a plurality of power pins 400 and a control IC pin 500, wherein the control IC chip 300 and the plurality of power chips 200 are arranged in the package body 100, each of the plurality of power chips 200 is electrically connected with the control IC chip 300, the plurality of power pins 400 are led out from one side of the package body 100 close to the power chips 200, each of the plurality of power chips 200 is electrically connected with the corresponding power pin 400 in the plurality of power pins 400 through a conductive piece, and the control IC pin 500 is led out from one side of the package body 100 close to the control IC chip 300.
The control IC chip 300 is provided with a plurality of contacts, at least two contacts are provided, the contacts are electrically connected with the power chip 200, and the control IC pin 500 is electrically connected with the contacts. By arranging two contacts on the layout of the control IC chip 300, the power module with the grid electrodes at different positions can be compatible, the problem of connection matching between the control IC chip 300 and the power chip 200 is efficiently solved, cross lines are avoided, the compatibility of the control IC chip 300 is improved, and the length of a bonding wire 600 between the control IC chip 300 and a control IC pin 500 can be correspondingly reduced
According to the intelligent power module 1 provided by the embodiment of the invention, power modules with gates at different positions can be compatible, the connection matching problem between the control IC chip 300 and the power chip 200 is efficiently solved, cross lines are avoided, and the compatibility of the control IC chip 300 is improved.
In the prior art, referring to fig. 1-2, in order to solve the problem of adapting the control IC chip 300', the power chip 200' is rotated 90 degrees counterclockwise to avoid the high-side gate driving output contact of the control IC chip 300 'and the gate bonding wire of the power chip 200' from crossing the high-side power supply ground contact of the control IC chip 300 'and the emitter bonding wire of the power chip 200'. However, there are two problems with the rotation of the power chip 200', the first: the bonding direction of the bonding wire (the high-side power supply ground contact of the control IC chip 300 'and the emitter bonding wire of the power chip 200') is the same as the trench gate direction of the power chip 200', which may affect the reliability of the power chip 200'; secondly, the method comprises the following steps: after the power chip 200' rotates, the emitter X direction of the power chip 200' is narrow, and the space for bonding 3 aluminum wires (12 mil or thicker) is insufficient, which cannot meet the requirement of the high-power intelligent power module 1 '.
According to the first embodiment of the present invention, referring to fig. 3-7, the control IC chip 300 is a high-voltage control IC chip 310, the high-voltage control IC chip 310 is provided with at least two high-side power supply ground contacts 311 and a high-side gate driving output contact 312, the at least two high-side power supply ground contacts 311 are disposed on two sides of the high-side gate driving output contact 312, and at least one high-side power supply ground contact 311 is electrically connected to the power chip 200. Therefore, at least two high-side power supply ground contacts 311 are arranged on the high-voltage control IC chip 310, so that when the gate of the power chip 200 is electrically connected to the high-side power supply ground contact 311 and the high-side gate drive output contact 312, the bonding wire 600 connected between the high-side power supply ground contact 311 and the power chip 200 can be selectively connected to one of the at least two high-side power supply ground contacts 311, and thus the bonding wire 600 connected between the high-side power supply ground contact 311 and the power chip 200 and the bonding wire 600 connected between the high-side gate drive output contact 312 and the power chip 200 do not intersect. Therefore, the control IC chip 300 can be matched with the power chips 200 at different grid positions, the compatibility of the control IC chip 300 is greatly improved, the direction of the power chip 200 does not need to be rotated, and the product reliability and the production efficiency are improved.
Specifically, referring to fig. 3, when the gate of the power chip 200 is on the right side, the high-side gate driving output contact 312 of the control IC chip 300 is connected to the gate of the power chip 200, and the high-side power supply ground contact 311 on the left side of the high-side gate driving output contact 312 is connected to the emitter of the power chip 200, so that the direction of the power chip 200 does not need to be rotated, the influence of the bonding force of the bonding wire 600 on the trench gate of the power chip 200 is reduced, and the reliability is improved. Meanwhile, since the rotation action of the power chip 200 is reduced, the chip mounting efficiency is improved.
And, the X direction of the emitter of the power chip 200 is wide, and three bonding wires 600 having a large diameter can be soldered.
Specifically, as shown in fig. 7, when the gate of the power chip 200 is on the left side, the high-side gate driving output contact 312 of the control IC chip 300 is connected to the gate of the power chip 200, and the high-side power supply ground contact 311 on the left side of the high-side gate driving output contact 312 is connected to the emitter of the power chip 200, and similarly, the direction of the power chip 200 does not need to be rotated, so that the control IC chip 300 has high compatibility, and when the control IC chip 300 is used for model selection, the efficiency is greatly improved, and the development time is saved.
According to the second embodiment of the present invention, referring to fig. 3-7, the control IC chip 300 is a high-voltage control IC chip 310, the high-voltage control IC chip 310 is provided with a high-side power supply ground contact 311 and high-side gate driving output contacts 312, the number of the high-side gate driving output contacts 312 is at least two, the at least two high-side gate driving output contacts 312 are disposed on two sides of the high-side power supply ground contact 311, and the at least one high-side gate driving output contact 312 is electrically connected to the power chip 200. Therefore, at least two high-side gate driving output contacts 312 are arranged on the high-voltage control IC chip 310, so that when the gate of the power chip 200 is electrically connected with the high-side power supply ground contact 311 and the high-side gate driving output contacts 312, the bonding wire 600 connected between the high-side gate driving output contacts 312 and the power chip 200 can be selectively connected to one of the at least two high-side gate driving output contacts 312, and therefore the bonding wire 600 connected between the high-side power supply ground contact 311 and the power chip 200 and the bonding wire 600 connected between the high-side gate driving output contacts 312 and the power chip 200 cannot intersect. Therefore, the control IC chip 300 can be matched with the power chips 200 at different grid positions, the compatibility of the control IC chip 300 is greatly improved, the direction of the power chip 200 does not need to be rotated, and the product reliability and the production efficiency are improved.
Specifically, referring to fig. 3, when the gate of the power chip 200 is on the right side, the high-side gate driving output contact 312 of the control IC chip 300 is connected to the gate of the power chip 200, and the high-side gate driving output contact 312 on the right side of the high-side power supply ground contact 311 is connected to the emitter of the power chip 200, so that the direction of the power chip 200 does not need to be rotated, the influence of the bonding force of the bonding wire 600 on the trench gate of the power chip 200 is reduced, and the reliability is improved. Meanwhile, since the rotation action of the power chip 200 is reduced, the chip mounting efficiency is improved.
And, the X direction of the emitter of the power chip 200 is wide, and three bonding wires 600 having a large diameter can be soldered.
Specifically, as shown in fig. 6, when the gate of the power chip 200 is on the right side, the high-side gate driving output contact 312 of the control IC chip 300 is connected to the gate of the power chip 200, and the high-side gate driving output contact 312 on the right side of the high-side power supply ground contact 311 is connected to the emitter of the power chip 200, and similarly, the direction of the power chip 200 does not need to be rotated, so that the control IC chip 300 has high compatibility, and when the control IC chip 300 is used for model selection, the efficiency is greatly improved, and the development time is saved.
Further, as shown in fig. 4, the high-side power supply ground contact 311 may be two. As such, the two high-side power supply ground contacts 311 may be disposed at both sides of the high-side gate drive output contact 312, respectively, thereby facilitating the connection between the high-side power supply ground contact 311 and the emitter of the rate chip. Of course, the number of the high-side power supply ground contacts 311 may be three, and three high-side power supply ground contacts 311 are disposed on three sides of the high-side gate drive output contact 312, so that the application range of the control IC chip 300 may be expanded, that is, the electrical connection between the high-side power supply ground contact 311 and the emitter of the power chip 200 may be more diversified.
Similarly, referring to FIG. 5, there may be two high side gate drive output contacts 312. Thus, the two high-side gate driving output contacts 312 may be respectively disposed at both sides of the high-side power supply ground contact 311, thereby facilitating the connection between the high-side gate driving output contacts 312 and the emitter of the rate chip. Of course, the number of the high-side gate driving output contacts 312 may be three, and the three high-side gate driving output contacts 312 are disposed on three sides of the high-side power supply ground contact 311, so that the application range of the control IC chip 300 may be expanded, that is, the electrical connection between the high-side gate driving output contacts 312 and the emitter of the power chip 200 may be more diversified.
The high-side power supply ground contact 311 is a three-phase contact and the high-side door drive output contact 312 is a three-phase contact. That is, the high-side power supply ground contact 311 has three types of contacts, which are a high-side power supply ground U contact, a high-side power supply ground V contact, and a high-side power supply ground W contact, respectively. Similarly, the high-side gate drive output contact 312 has three types of contacts, a high-side gate drive output U contact, a high-side gate drive output V contact, and a high-side gate drive output W contact. As such, the high-side power supply ground contact 311 has three types of contacts, and each type of high-side power supply ground contact 311 has two, so that two of each type of high-side power supply ground contacts 311 can be disposed at both sides of each type of high-side door drive output contact 312.
Referring to fig. 8 and 9, the control IC chip 300 may be a low-voltage control IC chip 320, the low-voltage control IC chip 320 is provided with at least two ground contacts 321, and at least one ground contact 321 is electrically connected to the control IC pin 500. That is to say, at least two ground contacts 321 are disposed on the low-voltage control IC chip 320, so that when the control IC chip 300 is electrically connected to the control IC pin 500, the bonding wire 600 connected between the ground contact 321 and the control IC pin 500 can be selectively connected to one of the at least two ground contacts 321, the length of the bonding wire 600 is effectively shortened, and the compatibility of the control IC chip 300 is greatly improved, that is, the control IC chip 300 can be applied to the intelligent power modules 1 with different specifications, thereby reducing the design cost and the production cost of the intelligent power module 1.
As shown in fig. 9, at least two ground contacts 321 are spaced apart from each other on both sides of the low-voltage control IC chip 320 in the longitudinal direction. That is, at least two ground contacts 321 are distributed on two sides of the low-voltage control IC chip 320, and a single ground contact 321 can be selected according to the position of the control IC pin 500, so that the length of the lead is effectively shortened, and the compatibility of the control IC chip 300 is greatly improved. And, when the control IC chip 300 is disposed on the left or right side of the smart power module 1, the ground contacts 321 on both sides of the control IC chip 300 can be electrically connected to the control IC pins 500 conveniently.
And, referring to fig. 10 and 11, the control IC chip 300 may be a low voltage control IC chip 320, the low voltage control IC chip 320 is provided with at least two power supply contacts 322, and at least one power supply contact 322 is electrically connected to the control IC pin 500. That is to say, the at least two power supply contacts 322 are disposed on the low-voltage control IC chip 320, so that when the control IC chip 300 is electrically connected to the control IC pin 500, the bonding wire 600 connected between the power supply contacts 322 and the control IC pin 500 can be selectively connected to one of the at least two power supply contacts 322, the length of the bonding wire 600 is effectively shortened, and the compatibility of the control IC chip 300 is greatly improved, that is, the control IC chip 300 can be applied to the intelligent power modules 1 with different specifications, thereby reducing the design cost and the production cost of the intelligent power module 1.
As shown in fig. 11, at least two power supply contacts 322 are disposed at intervals on two adjacent sides of the low-voltage control IC chip 320, and a linx contact is interposed between the at least two power supply contacts 322. At least two grounding contacts 321 are distributed on two sides of the low-voltage control IC chip 320, and a single grounding contact 321 can be selected according to the position of the control IC pin 500, so that the length of a lead is effectively shortened, and the compatibility of the control IC chip 300 is greatly improved. Furthermore, a linx contact is arranged between the two supply contacts 322, wherein the linx contact is a three-phase contact
Referring to fig. 3 to 11, the smart power module 1 further includes: a first electrical connection electrically connected between power pin 400 and power chip 200. As such, a first electrical connection may be provided between power pin 400 and power chip 200, and a first electrical connection may be provided between control IC chip 300 and power chip 200. The first electrical connector may be a bonding wire 600, and further, the bonding wire 600 includes, but is not limited to, a gold wire, a silver wire, a copper wire, an aluminum wire, a copper foil, and an aluminum foil.
And, as shown with reference to fig. 3-11, the smart power module 1 further includes: and a second electrical connector 700, the second electrical connector 700 being electrically connected between the control IC chip 300 and the control IC pin 500. By connecting each power pin 400 with the corresponding power chip 200 through one second electric connector 700, and forming an integral connecting structure between the corresponding power chip 200 and the power pin 400, the second electric connector 700 can be provided with a shape with a larger cross section area, the through-current capacity between the power chip 200 and the power pin 400 is stronger, and further the heat generation of the second electric connector 700 is lower.
For example, second electrical connector 700 forms a ribbon-shaped conductive strip, and second electrical connector 700 is more securely bonded to power chip 200. Compared with the welding mode of the aluminum wires, the welding area of the second electric connecting piece 700 is large, each aluminum wire is not required to be welded independently, and the welding times are reduced only by welding the whole second electric connecting piece 700 independently.
In some embodiments of the invention, the second electrical connector 700 is an aluminum tape. The welding width of the aluminum strip is large, and the welding process is relatively simple. And the aluminium strip compares the aluminium wire more reliably, and the surface that the aluminium strip contacted with power chip 200 and power pin 400 forms the plane, and the aluminium strip is more firm with power chip 200 and power pin 400 bonding, and the aluminium strip is connected the electrode of power chip 200 and power pin 400 and is formed the return circuit, can not cause the torn problem of jump point.
In other embodiments of the present invention, second electrical connector 700 is an aluminum-clad copper core conductive tape connected to power chip 200 and power pin 400. The conductive tape with the aluminum wrapped by the copper core has good welding performance, and a compact oxide film is formed on the outer peripheral surface of the copper core, so that the durability of the second electric connector 700 is improved.
An apparatus according to an embodiment of the invention is described below.
The device according to an embodiment of the present invention comprises the smart power module 1 according to the above-described embodiment of the present invention and a controller. The controller is electrically connected with the intelligent power module 1.
According to the device provided by the embodiment of the invention, the intelligent power module 1 provided by the embodiment of the invention has the advantages of strong current capacity, firm connection, high welding efficiency and the like.
Other constructions and operations of the smart power module 1 and the device according to embodiments of the invention are known to those skilled in the art and will not be described in detail here.
Other constructions and operations of the smart power module 1 and the device according to embodiments of the invention are known to those skilled in the art and will not be described in detail here.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. A smart power module, comprising:
the packaging structure comprises a packaging body, a control IC chip and a plurality of power chips are arranged in the packaging body, each of the plurality of power chips is electrically connected with the control IC chip, a plurality of contacts are arranged on the control IC chip, the number of at least one contact is at least two, and the contacts are electrically connected with the power chips;
the power pins are led out from one side of the packaging body close to the power chips, and each of the power chips is electrically connected with the corresponding power pin in the power pins through a conductive piece;
and the control IC pin is led out from one side of the packaging body close to the control IC chip and is electrically connected with the contact.
2. The intelligent power module according to claim 1, wherein the control IC chip is a high-voltage control IC chip, a high-side power supply ground contact and a high-side door driving output contact are disposed on the high-voltage control IC chip, the number of the high-side power supply ground contacts is at least two, at least two high-side power supply ground contacts are disposed on two sides of the high-side door driving output contact, and at least one high-side power supply ground contact is electrically connected with the power chip; or the like, or, alternatively,
control IC chip is high-pressure control IC chip, be provided with high side power supply ground contact and high side door drive output contact on the high-pressure control IC chip, high side door drive output contact is at least two, at least two high side door drive output contact set up in the both sides of high side door drive output contact, at least one high side door drive output contact with the power chip electricity is connected.
3. The smart power module of claim 2, wherein the high-side power supply ground contact is two or the high-side gate drive output contact is two.
4. The smart power module as recited in claim 3 wherein the high side power supply ground contact is a three phase contact and the high side door drive output contact is a three phase contact.
5. The smart power module as claimed in claim 1, wherein the control IC chip is a low voltage control IC chip, the low voltage control IC chip is provided with at least two ground contacts, and at least one of the ground contacts is electrically connected to the control IC pin.
6. The smart power module according to claim 5, wherein at least two of the ground contacts are spaced apart on both sides of the low-voltage control IC chip in a length direction.
7. The smart power module as claimed in claim 1, wherein the control IC chip is a low voltage control IC chip, the low voltage control IC chip is provided with at least two power supply contacts, and at least one of the power supply contacts is electrically connected to the control IC pin.
8. The intelligent power module as claimed in claim 7, wherein at least two of the power supply contacts are arranged on two adjacent sides of the low-voltage control IC chip at intervals, and a linx contact is clamped between the at least two power supply contacts.
9. The smart power module of claim 1, further comprising: a first electrical connection electrically connected between the power pin and a power chip; and the number of the first and second groups,
the smart power module further includes: a second electrical connection electrically connected between the control IC chip and the control IC pin.
10. An apparatus comprising the smart power module of any of claims 1-9 and a controller electrically connected to the smart power module.
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| CN202211442181.4A CN115732490B (en) | 2022-11-17 | 2022-11-17 | Intelligent power module and equipment |
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| CN202211442181.4A CN115732490B (en) | 2022-11-17 | 2022-11-17 | Intelligent power module and equipment |
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| CN115732490B (en) | 2023-11-17 |
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