CN116281846B - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereof Download PDFInfo
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- CN116281846B CN116281846B CN202310533505.3A CN202310533505A CN116281846B CN 116281846 B CN116281846 B CN 116281846B CN 202310533505 A CN202310533505 A CN 202310533505A CN 116281846 B CN116281846 B CN 116281846B
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00047—Cavities
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
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- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
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Abstract
The invention provides a semiconductor device and a manufacturing method thereof, wherein the method comprises the following steps: providing a sensitive material layer, wherein the sensitive material layer comprises a first surface and a second surface; forming a sacrificial layer and a side wall layer surrounding the sacrificial layer on the second surface of the sensitive material layer, wherein a release hole for connecting the sacrificial layer is formed at the top of the side wall layer, and the bottom of the side wall layer is arranged on the second surface of the sensitive material layer; sequentially etching the sensitive material layer and the side wall layer from the first surface of the sensitive material layer to form a groove penetrating the sensitive material layer and extending into the side wall layer, wherein an opening of the groove is opposite to the bottom of the side wall layer; forming a filling layer filling the groove; the sacrificial layer is removed through the release holes to form a cavity structure between the sidewall layer and the sensitive material layer. The invention can reduce the corrosion speed of the interface layer between the sensitive material layer and the side wall layer and avoid cracking between the sensitive material layer and the side wall layer.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof.
Background
MEMS (Micro-Electro-Mechanical System, microelectromechanical system) refers to a Micro system that integrates mechanical components, driving parts, optical systems, electrical control systems into one whole. The MEMS device has the advantages of small volume, low power consumption and the like, and has wide application scenes in a plurality of fields such as smart phones, tablet personal computers, game machines, automobiles, unmanned aerial vehicles and the like. Like integrated circuits, MEMS devices are also evolving towards high performance, miniaturization, and low cost and integration.
The cavity structure of the existing MEMS device is formed by removing the sacrificial layer between the sensitive material layer and the side wall layer through the release hole by using a wet etching process or a dry etching process. However, an interface layer is usually present between the sensitive material layer and the sidewall layer, and etching reaction gas or liquid corrodes the interface layer when the sacrificial layer is removed, so that the sensitive material layer and the sidewall layer are cracked, serious process problems occur, and device failure is caused.
Disclosure of Invention
In the summary, a series of concepts in a simplified form are introduced, which will be further described in detail in the detailed description. The summary of the invention is not intended to define the key features and essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
In view of the problems existing at present, an aspect of an embodiment of the present invention provides a method for manufacturing a semiconductor device, including:
providing a layer of sensitive material, the layer of sensitive material comprising a first surface and a second surface opposite the first surface;
forming a sacrificial layer and a side wall layer surrounding the sacrificial layer on the second surface of the sensitive material layer, wherein a release hole connected with the sacrificial layer is formed at the top of the side wall layer, and the bottom of the side wall layer is arranged on the second surface of the sensitive material layer;
sequentially etching the sensitive material layer and the side wall layer from the first surface of the sensitive material layer to form a groove penetrating through the sensitive material layer and extending into the side wall layer, wherein the opening position of the groove is opposite to the bottom of the side wall layer;
forming a filling layer filling the groove;
and removing the sacrificial layer through the release hole to form a cavity structure between the side wall layer and the sensitive material layer.
In some embodiments, the width of the groove tapers downwardly from the opening.
In some embodiments, the etching the sensitive material layer and the sidewall layer sequentially from the first surface of the sensitive material layer to form a recess extending through the sensitive material layer and into the interior of the sidewall layer comprises:
During the etching of the sensitive material layer and the sidewall layer, a polymer layer is deposited on the sidewalls of the recess such that the width of the recess gradually decreases from the opening down.
In some embodiments, the etching the sensitive material layer and the sidewall layer sequentially from the first surface of the sensitive material layer to form a recess extending through the sensitive material layer and into the interior of the sidewall layer comprises:
forming a photoresist layer covering the first surface of the sensitive material layer;
setting a focusing point above the center position of the photoresist layer in the thickness direction in the process of exposing the photoresist layer so as to form a photoresist pattern with the thickness gradually decreasing from outside to inside at the opening position of the groove;
and etching the sensitive material layer and the side wall layer based on the photoresist layer after exposure and development so that the width of the groove gradually decreases downwards from the opening.
In some embodiments, the etching the sensitive material layer and the sidewall layer sequentially from the first surface of the sensitive material layer to form a recess extending through the sensitive material layer and into the interior of the sidewall layer comprises:
Forming a photoresist layer covering the first surface of the sensitive material layer;
exposing and developing the photoresist layer based on a gray scale photoetching plate to form a photoresist pattern with the thickness gradually decreasing from outside to inside at the opening position of the groove;
and etching the sensitive material layer and the side wall layer based on the photoresist layer after exposure and development so that the width of the groove gradually decreases downwards from the opening.
In some embodiments, the sidewalls of the groove are formed with one or more reliefs formed at least in the sidewall layer.
In some embodiments, the concave-convex portion includes at least a first concave-convex portion and a second concave-convex portion located under the first concave-convex portion, the concave-convex portion is in a circular arc shape, and the step of forming the groove includes:
forming a first sub-groove by adopting an isotropic etching process, wherein the side wall of the first sub-groove is provided with the first concave-convex part;
depositing a polymer layer at the bottom and sidewalls of the first sub-recess;
removing the polymer layer at the bottom of the first sub-groove;
and forming a second sub-groove below the first sub-groove by adopting an isotropic etching process, wherein the width of the second sub-groove is smaller than that of the first sub-groove, and the side wall of the second sub-groove is provided with the second concave-convex part.
In some embodiments, the concavities and convexities are triangular, and the step of forming the grooves includes:
forming a first sub-groove by adopting an inclined etching process, wherein the side wall of the first sub-groove is provided with a first inclined angle;
depositing a polymer layer at the bottom and sidewalls of the first sub-recess;
removing the polymer layer at the bottom of the first sub-groove;
and forming a second sub-groove below the first sub-groove by adopting an inclined etching process, wherein the side wall of the second sub-groove is provided with a second inclined angle, and the second inclined angle is different from the first inclined angle.
In some embodiments, the width of the groove is uniform from the opening downward.
In some embodiments, the width of the groove is less than the width of the sidewall layer bottom.
In some embodiments, the providing a MEMS layer comprises: providing a first substrate, and forming the MEMS layer on the first substrate, wherein the first surface of the MEMS layer is arranged on the first substrate;
before forming the groove, the method further comprises: forming a second substrate on top of the sidewall layer;
removing the first substrate to expose the first surface of the sensitive material layer;
After forming the fill layer, the method further comprises: forming a third substrate on the first surface of the sensitive material layer;
and removing the second substrate to expose the release hole.
In some embodiments, the layer of sensitive material comprises a piezoelectric layer, the first surface of the layer of sensitive material being formed with a first electrode, the second surface of the layer of sensitive material being formed with a second electrode.
A second aspect of an embodiment of the present invention provides a semiconductor device including:
a layer of sensitive material comprising a first surface and a second surface opposite the first surface;
a sidewall layer formed on the second surface of the sensitive material layer, a bottom of the sidewall layer being disposed on the second surface of the sensitive material layer;
the groove penetrates through the sensitive material layer from the first surface of the sensitive material layer and extends into the side wall layer, the opening position of the groove is opposite to the bottom of the side wall layer, and a filling layer is filled in the groove;
and the cavity structure is arranged between the side wall layer and the sensitive material layer.
According to the manufacturing method of the semiconductor device and the semiconductor device provided by the embodiment of the invention, the actual length of the interface layer is increased and the difficulty of corrosion of the interface layer is improved by forming the groove penetrating through the interface layer and forming the filling layer in the groove, so that the effect of enhancing the integral structure of the semiconductor device is achieved.
Drawings
The following drawings are included to provide an understanding of the invention and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and their description to explain the principles of the invention. In the accompanying drawings:
fig. 1 shows a schematic cross-sectional view of a first stage of a semiconductor device obtained by sequentially carrying out steps according to a conventional method of manufacturing a semiconductor device;
fig. 2 is a schematic sectional view showing a second stage of the semiconductor device obtained by sequentially carrying out the steps according to the conventional method for manufacturing a semiconductor device;
fig. 3 is a schematic sectional view showing a third stage of the semiconductor device obtained by sequentially carrying out the steps according to the conventional method for manufacturing a semiconductor device;
fig. 4 is a schematic flow chart showing a method of manufacturing a semiconductor device according to an embodiment of the present invention;
Fig. 5 is a schematic sectional view showing a first stage of a semiconductor device obtained by sequentially carrying out steps in a method of manufacturing a semiconductor device according to an embodiment of the present invention;
fig. 6 is a schematic sectional view showing a second stage of the semiconductor device obtained by sequentially carrying out the steps of the method for manufacturing a semiconductor device according to an embodiment of the present invention;
fig. 7 is a schematic sectional view showing a third stage of the semiconductor device obtained by sequentially carrying out the steps of the method for manufacturing a semiconductor device according to an embodiment of the present invention;
fig. 8 is a schematic sectional view showing a fourth stage of the semiconductor device obtained by sequentially carrying out the steps of the method for manufacturing a semiconductor device according to an embodiment of the present invention;
fig. 9 is a schematic sectional view showing a fifth stage of the semiconductor device obtained by sequentially carrying out the steps of the method for manufacturing a semiconductor device according to an embodiment of the present invention;
fig. 10 is a schematic sectional view showing a sixth stage of the semiconductor device obtained by sequentially carrying out the steps of the method for manufacturing a semiconductor device according to an embodiment of the present invention;
fig. 11 is a schematic sectional view showing a seventh stage of the semiconductor device obtained by sequentially carrying out the steps of the method for manufacturing a semiconductor device according to an embodiment of the present invention;
FIG. 12 is a schematic diagram showing a first step of etching a recess of gradually decreasing width in accordance with an embodiment of the present invention;
FIG. 13 is a schematic diagram showing a second step of etching a groove with gradually decreasing width according to an embodiment of the present invention;
FIG. 14 is a schematic view showing a third step of etching to form grooves of gradually decreasing width according to an embodiment of the present invention;
FIG. 15 is a schematic diagram showing a fourth step of etching to form grooves of progressively smaller width in accordance with one embodiment of the present invention;
FIG. 16 is a schematic diagram showing a fifth step of etching to form grooves of gradually decreasing width according to an embodiment of the present invention;
FIG. 17 is a schematic diagram showing a first step of etching a recess of gradually decreasing width according to another embodiment of the present invention;
FIG. 18 is a schematic diagram showing a second step of etching a recess of gradually decreasing width according to another embodiment of the present invention;
FIG. 19 is a schematic view showing a first step of etching a recess having a gradually decreasing width according to still another embodiment of the present invention;
FIG. 20 is a schematic view showing a second step of etching a groove with gradually decreasing width according to still another embodiment of the present invention;
FIG. 21 shows a schematic view of a groove having a plurality of circular arc shaped concavities and convexities, according to an embodiment of the present invention;
Fig. 22 shows a schematic view of a groove having a plurality of triangular concavities and convexities according to an embodiment of the present invention.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the invention may be practiced without one or more of these details. In other instances, well-known features have not been described in detail in order to avoid obscuring the invention.
It should be understood that the present invention may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size of layers and regions, as well as the relative sizes, may be exaggerated for clarity. Like numbers refer to like elements throughout.
It will be understood that when an element or layer is referred to as being "on" … …, "" adjacent to "… …," "connected to" or "coupled to" another element or layer, it can be directly on, adjacent to, connected to or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on" … …, "" directly adjacent to "… …," "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Spatially relative terms, such as "under … …," "under … …," "below," "under … …," "above … …," "above," and the like, may be used herein for ease of description to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "under" or "beneath" other elements would then be oriented "on" the other elements or features. Thus, the exemplary terms "under … …" and "under … …" may include both an upper and a lower orientation. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatially relative descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
As shown in fig. 1, 2 and 3, in the current manufacturing method of a semiconductor device, in order to obtain a cavity structure, a sacrificial layer 303 surrounded by a sidewall layer 304 is first required to be formed on a sensitive material layer 301, wherein the sidewall layer 304 and the sacrificial layer 303 have a high etching selectivity; the sacrificial layer 303 is then removed through the release holes 305 formed in the sidewall layer 304 using a wet or dry process, thereby forming the cavity structure 106 surrounded by the sidewall layer 304.
However, an interfacial layer 306 is typically present between the sensitive material layer 301 and the sidewall layer 304, and is typically formed by oxidizing the surface of the sensitive material layer 301 when the sidewall layer 304 is formed, and is relatively difficult to remove; when the sacrificial layer 303 is removed, the etching reaction gas or liquid reacts with the interface layer 306, so that the interface layer 306 is etched, and the sensitive material layer 301 and the sidewall layer 304 connected through the interface layer 306 are cracked, so that serious process problems occur, and the device is disabled.
The main reason why the interface layer 306 is corroded laterally during the release of the sacrificial layer 303 is that the interface layer 306 is made of the same or similar material as the sacrificial layer 303, and the etchant for removing the sacrificial layer 303 reacts with the interface layer 306. If the sacrificial layer 303 is removed by using an etchant which is not likely to damage the interface layer 306, the time for releasing the sacrificial layer 303 is long, the cost is high, and the productivity of mass production is limited.
In view of the above problems, as shown in fig. 4, an embodiment of the present invention provides a method for manufacturing a semiconductor device, including the steps of:
step S210: providing a layer of sensitive material, the layer of sensitive material comprising a first surface and a second surface opposite the first surface;
step S220: forming a sacrificial layer and a side wall layer surrounding the sacrificial layer on the second surface of the sensitive material layer, wherein a release hole connected with the sacrificial layer is formed at the top of the side wall layer, and the bottom of the side wall layer is arranged on the second surface of the sensitive material layer;
step S230: sequentially etching the sensitive material layer and the side wall layer from the first surface of the sensitive material layer to form a groove penetrating through the sensitive material layer and extending into the side wall layer, wherein the opening position of the groove is opposite to the bottom of the side wall layer;
step S240: forming a filling layer filling the groove;
step S250: and removing the sacrificial layer through the release hole to form a cavity structure between the side wall layer and the sensitive material layer.
According to the manufacturing method of the semiconductor device, the groove penetrating through the interface layer is formed, and the filling layer is formed in the groove, so that the actual length of the interface layer is increased, the difficulty in corrosion of the interface layer is increased, and the effect of enhancing the integral structure of the semiconductor device is achieved.
In the following description, for the purpose of providing a thorough understanding of the present invention, detailed structures and steps are presented in order to illustrate the technical solution presented by the present invention. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other embodiments in addition to these detailed descriptions.
Next, an implementation procedure of a method for manufacturing a semiconductor device according to an embodiment of the present invention will be exemplarily described with reference to fig. 5 to 22, and fig. 5 to 22 show schematic cross-sectional views of a semiconductor device obtained by sequentially implementing steps of the method for manufacturing a semiconductor device according to an embodiment of the present invention.
First, step S210 is performed to provide a sensitive material layer, where the sensitive material layer includes a first surface and a second surface opposite to the first surface.
Illustratively, as shown in fig. 5, a first substrate (not shown) is provided, on which the sensitive material layer 301 is formed, the sensitive material layer 301 including a first surface and a second surface opposite the first surface, the first surface being disposed on the first substrate. The first substrate may be any suitable semiconductor substrate, such as a bulk silicon substrate, which may also be at least one of the materials mentioned below: si, ge, siGe, siC, siGeC, inAs, gaAs, inP or other III/V compound semiconductors, and also include multilayer structures of these semiconductors, or are silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator (S-SiGeOI), silicon-germanium-on-insulator (SiGeOI), and germanium-on-insulator (GeOI), or may be double-sided polished silicon wafers (Double Side Polished Wafers, DSP), or may be ceramic substrates such as alumina, quartz, or glass substrates, or the like.
Illustratively, prior to forming the layer 301 of sensitive material on the first substrate, the surface of the first substrate is first oxidized to form an oxide layer. After the oxide layer is formed, a first electrode (not shown) may be formed over the first substrate. In one example, a method of forming a first electrode includes: depositing a first electrode material layer to cover the first substrate, forming a patterned mask layer on the first electrode material layer, defining a pattern of the first electrode on the mask layer, etching the first electrode material layer by taking the patterned mask layer as a mask to form a first electrode, and finally removing the patterned mask layer.
In another example, a lift off process may be used to form the first electrode, i.e., a patterned mask layer is first formed on the surface of the first substrate, then a first electrode material layer covering the patterned mask layer is formed, and finally the patterned mask layer is stripped, and the first electrode material layer above the patterned mask layer is removed to obtain the first electrode.
The material of the first electrode may be a conductive material or a semiconductor material, wherein the conductive material may be a metal material having conductive properties, and the metal material may be a metal such as aluminum (Al), copper (Cu), gold (Au), platinum (Pt), or an alloy of the metal and copper. As the semiconductor material, si, ge, siGe, siC, siGeC and the like can be used.
Next, a sensitive material layer 301 is formed on the first substrate. Wherein the sensitive material layer 301 is used to implement the microelectromechanical functions of the semiconductor device, including but not limited to a piezoelectric layer. The piezoelectric layer generates a voltage when being subjected to external pressure, and conversely, if the voltage exists on both sides of the piezoelectric layer, the piezoelectric layer is slightly deformed, and the mutual conversion between the sound wave and the electric signal can be realized based on the characteristics of the piezoelectric layer.
For example, the piezoelectric material may be deposited using a deposition method such as chemical vapor deposition, physical vapor deposition, or atomic layer deposition, and a metal element including one or more of scandium, zirconium, calcium, titanium, magnesium, or the like may be doped into the piezoelectric material to form the piezoelectric layer. Illustratively, the material of the piezoelectric layer may include aluminum nitride, lead zirconate titanate, zinc oxide, etc., which the embodiments of the present invention are not limited to.
With continued reference to fig. 5, after the formation of the sensitive material layer 301, a second electrode 302 may also be formed on the sensitive material layer 301. When the sensitive material layer 301 is a piezoelectric layer, the first electrode, the piezoelectric layer, and the second electrode form a composite film, and the composite film may further include other film layers other than the above-mentioned several film layers, which may be reasonably set according to an actual device, and is not particularly limited herein.
In one example, the method of forming the second electrode 302 includes: a second electrode material layer is deposited overlying the substrate, the second electrode material layer may be a metal material layer or a semiconductor material layer. And forming a patterned mask layer on the second electrode material layer, wherein the patterned mask layer defines a pattern of the second electrode, etching the second electrode material layer by taking the patterned mask layer as a mask to form a second electrode 302, and finally removing the patterned mask layer.
In another example, the second electrode 302 may be formed by a lift off process, that is, a patterned mask layer is formed on the surface of the substrate first, then a second electrode material layer covering the patterned mask layer is formed, and finally the patterned mask layer is stripped, and the second electrode material layer above the patterned mask layer is removed, so as to obtain the second electrode.
Next, step S220 is performed to form a sacrificial layer 303 and a sidewall layer 304 surrounding the sacrificial layer 303 on the sensitive material layer 301. The sidewall layer 304 is formed at the top thereof with a release hole connecting the sacrificial layer 303, and the bottom of the sidewall layer 304 is disposed on the second surface of the sensitive material layer 301. The sidewall layer 304 is used to define the boundaries of the cavity structure.
Illustratively, first, a sacrificial layer 303 is formed on the sensitive material layer 301, a trench is formed in the sacrificial layer 303 through the sacrificial layer 303, and the bottom of the trench exposes the second surface of the sensitive material layer 301. The deposition process used to deposit the sacrificial layer 303 includes chemical vapor deposition, physical vapor deposition, and the like. After the sacrificial layer is deposited, a patterned photoresist layer is formed over sacrificial layer 303, with windows defining the trench locations therein. Thereafter, the sacrificial layer 303 is dry etched using the photoresist layer as a mask, thereby forming a trench penetrating the sacrificial layer 303. The etching of the sacrificial layer 303 is stopped at the second surface of the layer 301 of sensitive material. After the etching of the sacrificial layer 303 is completed, the photoresist layer may be removed by a photoresist ashing process or the like.
Next, a sidewall layer 304 is formed that fills the trench in the sacrificial layer and covers the surface of the sacrificial layer. I.e., the sidewall layer 304 includes a portion formed in the trench and a portion covering the surface of the sacrificial layer 303. The sidewall layer 304 may be deposited using a deposition method such as chemical vapor deposition, physical vapor deposition, or atomic layer deposition. The sidewall layer 304 and the sacrificial layer 303 have a high etching selectivity, so that the sidewall layer 304 is not affected in the process of removing the sacrificial layer 303, for example, if the material of the sacrificial layer 303 is SiO2, polysilicon may be used as the material of the sidewall layer 304.
In some embodiments, a sidewall layer covering the sensitive material layer 301 may be formed first, then a trench is etched in the sidewall layer, and then a sacrificial layer filling the trench is formed. And then, removing the sacrificial layer above the side wall layer through a chemical mechanical polishing process, and forming another part of the side wall layer covering the top of the sacrificial layer so that the side wall layer surrounds the sacrificial layer.
After forming the sidewall layer 304 surrounding the sacrificial layer 303, a release hole 305 connecting the sacrificial layer 303 is formed on top of the sidewall layer 304. Specifically, the top of sidewall layer 304 may be etched using the photoresist layer as a mask to form release holes 305 over sacrificial layer 303.
In the process of forming the sidewall layer 304, the second surface of the sensitive material layer 301 exposed at the bottom of the trench in the sacrificial layer 303 is oxidized, so that an interface layer 306 is formed between the sensitive material layer 301 and the sidewall layer 304, and the interface layer 306 is an oxide layer and is generally difficult to remove.
Since the sensitive material layer 301 needs to be etched from the first surface of the sensitive material layer 301, the first substrate needs to be removed after the release holes 305 are formed, so as to expose the first surface of the sensitive material layer 301. Wherein a second substrate may be bonded on top of the sidewall layer 304 as a temporary substrate for carrying the semiconductor device; and then, thinning the first substrate to a certain thickness, and corroding the first substrate to an oxide layer by using alkaline liquid medicine so as to remove the first substrate.
Next, step S230 is performed to etch the sensitive material layer 301 and the sidewall layer 304 sequentially from the first surface of the sensitive material layer 301 to form a recess 307 extending through the sensitive material layer 301 and into the sidewall layer 304, wherein an opening of the recess 307 is disposed opposite to a bottom of the sidewall layer 304, such that the recess 307 extends through the interface layer 306 between the sensitive material layer 301 and the sidewall layer 304.
Considering that if etching is performed downwards from the top of the sidewall layer 304, the etching difficulty is high due to the large thickness of the sidewall layer 304, so that the embodiment of the invention selects etching from the back (i.e., the first surface) of the sensitive material layer 301 to form the recess 307, at this time, only the sensitive material layer 301 needs to be etched to penetrate, and the thickness of the sensitive material layer 301 is far smaller than the thicknesses of the sacrificial layer 303 and the sidewall layer 304, so that when the recess 307 is etched, the etching required depth is small, and the process difficulty is controllable.
In some embodiments, as shown in fig. 6, the width of the recess 307 remains constant from the opening downwards, i.e. the longitudinal cross section of the recess 307 is rectangular. In this embodiment, a patterned photoresist layer may be formed on the first surface of the sensitive material layer 301, the photoresist layer having openings defining the locations of the recess openings; next, the sensitive material layer 301 and the sidewall layer 304 are anisotropically etched using the photoresist layer as a mask, thereby forming rectangular recesses 307.
Further, the width of the recess 307 is smaller than the width of the bottom of the sidewall layer 304, i.e. the edge of the recess 307 is located within the bottom of the sidewall layer 304, so that after the cavity structure is formed, the influence of the side corrosion at the interface on the anchor point of the contact between the sensitive material layer 301 and the sidewall layer 304 is reduced.
In another embodiment, as shown in fig. 9, the width of the recess 307 gradually decreases from the opening downwards, i.e. the longitudinal section of the recess 307 may approximate a triangle or trapezoid. Forming the recess 307 with a gradually decreasing width is advantageous in reducing the influence of the recess 307 on the sidewall layer 304.
As an implementation, referring to fig. 12 to 16, during etching of the first layer 401 to be etched, a polymer layer 403 is deposited on the sidewalls of the recess so that the width of the recess gradually decreases from the opening downward; the first layer to be etched 401 includes a sensitive material layer 301 and a sidewall layer 304.
Specifically, first, as shown in fig. 12, a patterned first photoresist layer 402 is formed on a first layer 401 to be etched, and an opening of a groove is defined by a window of the first photoresist layer 402; next, the first layer 401 to be etched is dry etched using the first photoresist layer 402 as a mask, and a gas generated by adding a polymer, such as fluorocarbon gas or fluorocarbon gas, is added to the etching gas. As shown in fig. 13, 14, 15 and 16, during etching, the gas added in the etching gas is deposited on the sidewall of the recess to form the polymer layer 403, and as the etching depth increases, the thickness of the polymer layer 403 gradually increases, and the window equivalent to the mask layer gradually decreases, so that the width of the recess gradually decreases.
As another implementation, a photoresist layer covering the first surface of the sensitive material layer 301 may be formed, and during exposure of the photoresist layer, a focus point is disposed above a central position of the photoresist layer, so as to form a photoresist pattern with a thickness gradually decreasing from outside to inside at an opening position of the recess; the sensitive material layer and the sidewall layer are etched based on the photoresist layer after the exposure and development, so that the width of the recess 307 formed by the etching is gradually reduced from the opening downward.
As shown in fig. 17 and 18, a second photoresist layer 502 is formed on the second layer to be etched 501 (including the sensitive material layer 301 and the sidewall layer 304), and the second photoresist layer 502 is exposed and developed. Specifically, the photoresist layer comprises resin and photosensitizer as main components, the resin has adhesive property, and for positive photoresist, the resin is relatively insoluble before exposure, and is changed from insoluble to soluble after exposure. The photosensitizer is used as a dissolution inhibitor before exposure and used for reducing the dissolution rate of the resin, and is used as a dissolution enhancer after exposure to improve the dissolution capacity of the photoresist in the developing solution. The photoresist layer subjected to the exposure treatment is changed in properties and is easily dissolved in the developer, while the photoresist layer not subjected to the exposure treatment is not dissolved in the developer. Because the focusing point is arranged above the central position of the photoresist layer in the thickness direction during exposure, the exposure area above the central position is overexposed at the moment, so that the exposure area is easier to dissolve in the developing solution, the window size is larger, the lower the exposure degree is, the less easy to dissolve in the developing solution is, the window size is gradually reduced, and an inverted triangle or inverted trapezoid photoresist pattern is formed; the grooves formed by etching the second layer to be etched 501 based on the photoresist pattern are also inverted triangular or inverted trapezoidal grooves.
In yet another implementation, a photoresist layer covering the first surface of the sensitive material layer 301 may be formed; exposing and developing the photoresist layer based on the gray-scale photoetching plate to form a photoresist pattern with the thickness gradually reduced from outside to inside at the opening position of the groove; the sensitive material layer 301 and the sidewall layer 304 are etched based on the photoresist layer after the exposure development so that the width of the recess 307 is gradually reduced from the opening downward.
As shown in fig. 19 and 20, a third photoresist layer 602 is first formed on a third layer 601 to be etched (including the sensitive material layer 301 and the sidewall layer 304), and the third photoresist layer 602 is exposed and developed using a gray scale photomask. Because the light transmittance of each position of the gray-scale photoetching plate is different, the photoresist layer corresponding to the part with high light transmittance after exposure is easier to remove, and the photoresist layer corresponding to the part with low light transmittance is relatively difficult to remove, so that a photoresist pattern with gradually reduced thickness from outside to inside is formed through the soaking treatment of the developing solution. When the third layer to be etched 601 is etched based on the photoresist pattern, the etching amount of the third layer to be etched 601 below the third photoresist layer 602 with larger thickness is smaller, and the etching amount of the third layer to be etched 601 below the third photoresist layer 602 with smaller thickness is larger, so that a groove with gradually reduced width from top to bottom is formed in the third layer to be etched 601.
Further, the side walls of the recess 307 are formed with one or more recesses and protrusions, i.e. the side walls of the recess 307 are not smooth side walls but are formed with undulations. The presence of the relief increases the length of the sidewalls of the recess 307 and thus further increases the actual length of the interface layer 306. The concave-convex portions are formed at least in the side wall layer 304, specifically, when the concave-convex portions are plural, plural concave-convex portions may be formed in the sensitive material layer 301 and the side wall layer 304, arranged from the top to the bottom of the recess 307; alternatively, the concave-convex portions may be formed only in the sidewall layer 304, not in the sensitive material layer 301, to simplify the process flow, and the concave-convex portions formed in the sidewall layer 304 may be one or more.
In one embodiment, as shown in fig. 21, the concave-convex portion has a circular arc shape. For convenience of description, two of the plurality of concave-convex portions are defined as a first concave-convex portion and a second concave-convex portion, which are located below the first concave-convex portion, and the first concave-convex portion and the second concave-convex portion may be any two adjacent concave-convex portions of the plurality of concave-convex portions. Accordingly, the groove 307 comprises a first sub-groove and a second sub-groove, the side wall of the first sub-groove having a first relief and the side wall of the second sub-groove having a second relief, the first sub-groove and the second sub-groove being two adjacent segments of the groove 307.
Assuming that the first sub-groove and the second sub-groove are formed in the sensitive material layer 301, in the process of forming the groove 307, the sensitive material layer 301 is etched by using an isotropic etching process first to form the first sub-groove, and since the etching rates of the isotropic etching process to all directions are equal, the sidewall of the first sub-groove is arc-shaped. Then, a polymer layer is deposited on the bottom and the side wall of the first sub-groove, and the step of depositing the polymer layer and the step of etching can share the same process equipment to improve efficiency. Then, the polymer layer at the bottom of the first sub-groove is removed by adopting an anisotropic etching process, the polymer layer on the side wall of the first sub-groove is reserved, and then the sensitive material layer 301 is continuously etched by adopting an isotropic etching process, so that a second sub-groove is formed below the first sub-groove. The polymer layer is formed on the side wall of the first sub-groove, so that the side wall of the first sub-groove is protected, and therefore the width of the etched second sub-groove is smaller than that of the first sub-groove, and the side wall of the second sub-groove is also arc-shaped. And so on until a plurality of sub-grooves with circular arc-shaped side walls are formed, and the widths of the plurality of sub-grooves are sequentially reduced.
In another embodiment, the relief is triangular in shape. In this embodiment, referring to fig. 22, the sensitive material layer 301 is first etched using a bevel etch process to form a first sub-recess, the sidewalls of which have a first bevel angle, wherein the bevel etch process may be any of the etch processes described with reference to fig. 12-20. Then, a polymer layer is deposited on the side wall and the bottom of the first sub-groove, and the step of depositing the polymer layer and the step of etching can share the same process equipment to improve efficiency. Then, an anisotropic etching process is used to remove the polymer layer at the bottom of the first sub-groove, and the polymer layer on the sidewall of the first sub-groove is remained, and then the sensitive material layer 301 is etched continuously to form a second sub-groove below the first sub-groove, wherein the second sub-groove also has an inclined sidewall, and the sidewall of the second sub-groove has a second inclination angle different from the first inclination angle. The side wall of the first sub-groove and the side wall of the second sub-groove form a triangular concave-convex part. The polymer layer is formed on the side wall of the first sub-groove, so that the side wall of the first sub-groove is protected, and the width of the second sub-groove formed by etching is smaller than that of the first sub-groove. Illustratively, the sub-grooves having the first inclination angle and the sub-grooves having the second inclination angle may be alternately formed, and the widths of the respective sub-grooves decrease sequentially from top to bottom until the grooves 307 as shown in fig. 22 are formed.
Next, as shown in fig. 7 or 10, step S240 is performed to form a filling layer 308 filling the recess 307. Illustratively, the fill layer 308 filling the recess 307 may be formed by a lift-off process, i.e., a photoresist layer is first formed outside the recess 307, then a fill layer material is deposited to fill the recess 307 and cover the photoresist layer, then the photoresist layer outside the recess 307 is removed along with the fill layer, and the fill layer 308 filled inside the recess 307 is left. Alternatively, the filling layer 308 may be formed by using a material having a relatively high etching selectivity to the sensitive material layer 301, after the filling layer material is deposited, the filling layer material outside the recess 307 is removed by photolithography and etching, and the filling layer 308 inside the recess 307 is remained, for example, when the sensitive material layer 301 is aluminum nitride, polysilicon or silicon oxide or the like may be selected as the material of the filling layer.
With continued reference to fig. 7 and 10, during the process of forming the filling layer 308, the sidewall of the recess 307 is oxidized, and the oxidized layer is connected with the original interface layer 306, so that the interface layer 306 is changed from the original planar structure to a structure protruding downwards, and the actual length of the interface layer 306 is increased on the premise that the projection length of the interface layer 306 is kept unchanged. Further, when the recess 307 has the rugged sidewall, the length of the oxide layer formed is longer than that of the oxide layer formed on the flat sidewall, thereby further increasing the actual length of the interface layer 306.
Next, step S250 is performed, as shown in fig. 8 or 11, to remove the sacrificial layer through the release hole 305, so as to form a cavity structure between the sidewall layer 304 and the sensitive material layer 301.
As described above, in order to expose the first surface of the sensitive material layer 301 to form the recess 307, a second substrate is first formed over the sidewall layer 304 as a temporary substrate. Accordingly, in order to expose the release hole 305 to remove the sacrificial layer, a third substrate may be first formed on the first surface of the sensitive material layer, for example, the third substrate may be formed by gluing or bonding; the second substrate is then removed to expose the release holes 305.
A release hole 305 is formed over the sacrificial layer 303 so as to expose the top of the sacrificial layer 303, and an etchant may remove the sacrificial layer 303 through the release hole 305, thereby forming a cavity structure surrounded by the sidewall layer 304 and the sensitive material layer 301. During the process of etching the sacrificial layer, the etchant will react with the interface layer 306, so that a certain degree of lateral corrosion is generated on the interface layer 306, and as the actual length of the interface layer 306 is increased and the shape thereof is changed through the grooves 307, the length, time and process difficulty of the etchant along the interface layer 306 from inside to outside are increased, and the possibility of cracking between the side wall layer 304 and the sensitive material layer 301 is reduced.
Thus far, the process steps performed by the method for manufacturing a semiconductor device according to an embodiment of the present invention are completed, and it is understood that the method for manufacturing a semiconductor device according to an embodiment of the present invention includes not only the above steps, but also other steps as needed before, during or after the above steps, which are included in the scope of the method for manufacturing a semiconductor device according to an embodiment of the present invention.
According to the manufacturing method of the semiconductor device, the groove penetrating through the interface layer is formed from the first surface of the sensitive material layer by etching, and the filling layer is formed in the groove, so that the newly formed interface layer on the side wall of the groove is connected with the original interface layer into a whole, the actual length of the interface layer is increased, the difficulty of corrosion of the interface layer is increased, and the effect of enhancing the integral structure of the semiconductor device is achieved.
As shown in fig. 8 or 11, an embodiment of the present invention also provides a semiconductor device that can be manufactured by the manufacturing method of the semiconductor device as described above. Specifically, the semiconductor device of the embodiment of the invention comprises: a layer of sensitive material 301, the layer of sensitive material 301 comprising a first surface and a second surface opposite the first surface; a sidewall layer 304 formed on the second surface of the sensitive material layer 301, the bottom of the sidewall layer 304 being disposed on the second surface of the sensitive material layer 301; a groove 307 penetrating the sensitive material layer 301 from the first surface of the sensitive material layer 301 and extending into the side wall layer 304, wherein an opening position of the groove 307 is opposite to the bottom of the side wall layer 304, and a filling layer 308 is filled in the groove 307; a cavity structure disposed between sidewall layer 304 and sensitive material layer 301. An interface layer 306 is formed between the sensitive material layer 301 and the filling layer 308 and between the sensitive material layer 301 and the sidewall layer 304, and the interface layer 306 has a shape protruding downward.
Illustratively, the width of the recess 307 tapers from the first surface to the second surface of the layer 301 of sensitive material, or the width of the recess 307 remains unchanged. Further, the sidewall of the recess 307 has one or more concavities and convexities formed at least in the sidewall layer. The concave-convex part is arc-shaped or triangular.
In some embodiments, the sensitive material layer 301 may be a piezoelectric layer; the semiconductor device further includes a first electrode (not shown) formed on a first surface of the sensitive material layer, and a second electrode 302 formed on a second surface of the sensitive material layer. The first electrode, the piezoelectric layer and the second electrode form a composite film, and the composite film can also comprise other film layers besides the above film layers, and can be reasonably arranged according to actual devices, and is not particularly limited herein.
The semiconductor device of the embodiment of the invention is provided with the groove which penetrates through the interface layer from the first surface of the sensitive material layer and extends into the side wall layer, the interface layer formed on the side wall of the groove is connected with the interface layer between the sensitive material layer and the side wall layer into a whole, the actual length of the interface layer is increased, and the difficulty of corrosion of the interface layer is improved, so that the effect of enhancing the integral structure of the semiconductor device is achieved.
The present invention has been illustrated by the above-described embodiments, but it should be understood that the above-described embodiments are for purposes of illustration and description only and are not intended to limit the invention to the embodiments described. In addition, it will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that many variations and modifications are possible in light of the teachings of the invention, which variations and modifications are within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (13)
1. A method of manufacturing a semiconductor device, the method comprising:
providing a layer of sensitive material, the layer of sensitive material comprising a first surface and a second surface opposite the first surface;
forming a sacrificial layer and a side wall layer surrounding the sacrificial layer on the second surface of the sensitive material layer, wherein a release hole connected with the sacrificial layer is formed at the top of the side wall layer, and the bottom of the side wall layer is arranged on the second surface of the sensitive material layer;
sequentially etching the sensitive material layer and the side wall layer from the first surface of the sensitive material layer to form a groove penetrating through the sensitive material layer and extending into the side wall layer, wherein the opening position of the groove is opposite to the bottom of the side wall layer;
Forming a filling layer filling the groove;
and removing the sacrificial layer through the release hole to form a cavity structure between the side wall layer and the sensitive material layer.
2. The method of manufacturing according to claim 1, wherein the width of the recess decreases gradually from the opening downward.
3. The method of manufacturing of claim 2, wherein the etching the layer of sensitive material and the sidewall layer in sequence from the first surface of the layer of sensitive material to form a recess through the layer of sensitive material and extending into the interior of the sidewall layer comprises:
during the etching of the sensitive material layer and the sidewall layer, a polymer layer is deposited on the sidewalls of the recess such that the width of the recess gradually decreases from the opening down.
4. The method of manufacturing of claim 2, wherein the etching the layer of sensitive material and the sidewall layer in sequence from the first surface of the layer of sensitive material to form a recess through the layer of sensitive material and extending into the interior of the sidewall layer comprises:
forming a photoresist layer covering the first surface of the sensitive material layer;
Setting a focusing point above the center position of the photoresist layer in the thickness direction in the process of exposing the photoresist layer so as to form a photoresist pattern with the thickness gradually decreasing from outside to inside at the opening position of the groove;
and etching the sensitive material layer and the side wall layer based on the photoresist layer after exposure and development so that the width of the groove gradually decreases downwards from the opening.
5. The method of manufacturing of claim 2, wherein the etching the layer of sensitive material and the sidewall layer in sequence from the first surface of the layer of sensitive material to form a recess through the layer of sensitive material and extending into the interior of the sidewall layer comprises:
forming a photoresist layer covering the first surface of the sensitive material layer;
exposing and developing the photoresist layer based on a gray scale photoetching plate to form a photoresist pattern with the thickness gradually decreasing from outside to inside at the opening position of the groove;
and etching the sensitive material layer and the side wall layer based on the photoresist layer after exposure and development so that the width of the groove gradually decreases downwards from the opening.
6. The method of manufacturing of claim 2, wherein the sidewall of the groove is formed with one or more concavities and convexities, the one or more concavities and convexities being formed at least in the sidewall layer.
7. The method of manufacturing according to claim 6, wherein the concave-convex portion includes at least a first concave-convex portion and a second concave-convex portion located below the first concave-convex portion, the concave-convex portion is in a circular arc shape, and the step of forming the groove includes:
forming a first sub-groove by adopting an isotropic etching process, wherein the side wall of the first sub-groove is provided with the first concave-convex part;
depositing a polymer layer at the bottom and sidewalls of the first sub-recess;
removing the polymer layer at the bottom of the first sub-groove;
and forming a second sub-groove below the first sub-groove by adopting an isotropic etching process, wherein the width of the second sub-groove is smaller than that of the first sub-groove, and the side wall of the second sub-groove is provided with the second concave-convex part.
8. The method of manufacturing according to claim 6, wherein the concave-convex portion is triangular, and the step of forming the groove includes:
forming a first sub-groove by adopting an inclined etching process, wherein the side wall of the first sub-groove is provided with a first inclined angle;
depositing a polymer layer at the bottom and sidewalls of the first sub-recess;
removing the polymer layer at the bottom of the first sub-groove;
And forming a second sub-groove below the first sub-groove by adopting an inclined etching process, wherein the side wall of the second sub-groove is provided with a second inclined angle, and the second inclined angle is different from the first inclined angle.
9. The method of manufacturing of claim 1, wherein the width of the recess remains constant from the opening down.
10. The method of manufacturing of claim 9, wherein the width of the recess is less than the width of the sidewall bottom.
11. The method of manufacturing of claim 1, wherein the providing a layer of sensitive material comprises: providing a first substrate, and forming the sensitive material layer on the first substrate, wherein the first surface of the sensitive material layer is arranged on the first substrate;
before forming the groove, the method further comprises: forming a second substrate on top of the sidewall layer;
removing the first substrate to expose the first surface of the sensitive material layer;
after forming the fill layer, the method further comprises: forming a third substrate on the first surface of the sensitive material layer;
and removing the second substrate to expose the release hole.
12. The method of manufacturing of any one of claims 1-11, wherein the layer of sensitive material comprises a piezoelectric layer, the first surface of the layer of sensitive material being formed with a first electrode, the second surface of the layer of sensitive material being formed with a second electrode.
13. A semiconductor device, the semiconductor device comprising:
a layer of sensitive material comprising a first surface and a second surface opposite the first surface;
a sidewall layer formed on the second surface of the sensitive material layer, a bottom of the sidewall layer being disposed on the second surface of the sensitive material layer;
the groove penetrates through the sensitive material layer from the first surface of the sensitive material layer and extends into the side wall layer, the opening position of the groove is opposite to the bottom of the side wall layer, and a filling layer is filled in the groove;
and the cavity structure is arranged between the side wall layer and the sensitive material layer.
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