CN115332743B - Terahertz reconfigurable filter with planar mask structure and preparation method - Google Patents
Terahertz reconfigurable filter with planar mask structure and preparation method Download PDFInfo
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- CN115332743B CN115332743B CN202210899470.0A CN202210899470A CN115332743B CN 115332743 B CN115332743 B CN 115332743B CN 202210899470 A CN202210899470 A CN 202210899470A CN 115332743 B CN115332743 B CN 115332743B
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 59
- 229910052751 metal Inorganic materials 0.000 claims abstract description 59
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000001914 filtration Methods 0.000 claims abstract description 17
- 238000009826 distribution Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 7
- 239000003989 dielectric material Substances 0.000 claims abstract description 6
- 238000009434 installation Methods 0.000 claims abstract description 5
- 230000000149 penetrating effect Effects 0.000 claims abstract description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 24
- 239000004973 liquid crystal related substance Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 11
- 230000001105 regulatory effect Effects 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 230000010354 integration Effects 0.000 claims description 2
- 238000007711 solidification Methods 0.000 claims 1
- 230000008023 solidification Effects 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 8
- 230000008901 benefit Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000004891 communication Methods 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 9
- 230000001276 controlling effect Effects 0.000 description 8
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 238000011160 research Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/2002—Dielectric waveguide filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/007—Manufacturing frequency-selective devices
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The application relates to the technical field of terahertz, and particularly discloses a terahertz reconfigurable filter with a planar mask structure and a preparation method thereof, wherein the filter comprises a metal waveguide, and an installation slot penetrating through the side surface of the metal waveguide is formed along the length direction of the waveguide; the filtering structure is inserted into the waveguide through the mounting seam to divide the inner cavity of the metal waveguide into two parts, and comprises a semiconductor substrate, a mask circuit and an adjustable medium which are sequentially arranged on one side of the semiconductor substrate, wherein the semiconductor substrate is provided with a through hole, and the mask circuit is connected with the metal waveguide through the through hole; the center frequency and passband bandwidth of the filter are adjusted by adjusting the dielectric constant distribution of the tunable dielectric material. The metal structure low-loss semiconductor structure processing technology has the advantages of being low in loss and high in semiconductor structure processing technology, and good tolerance is also shown for equipment precision. Through proper regulation and control, the filter realized by the method can realize the reconstruction of the center frequency and the bandwidth, and has wide application prospect.
Description
Technical Field
The application relates to a terahertz frequency band reconfigurable filter, in particular to a filter with reconfigurable center frequency and bandwidth, and belongs to the technical field of terahertz.
Background
The terahertz frequency band has rich frequency spectrum resources, and the terahertz signals are used as carrier waves for communication, so that broadband, high-speed and safe data transmission service can be developed. Terahertz communication is one of the preferred technical approaches for today's human demand for mass data transmission. The broadband characteristic of terahertz communication not only can provide a large amount of high-speed data rapid transmission capability, but also provides enough frequency band resources for flexible and safe regulation and control of communication frequency bands, so that terahertz communication can be subjected to long-term evolution in the fields of safe and reliable communication and variable-rate flexible communication service, such as frequency hopping communication and deep spread spectrum communication.
When the terahertz frequency hopping communication is carried out, the advantages of terahertz wide frequency hopping are required to be exerted, and meanwhile, the system is required to be ensured to have enough sensitivity, which means that the instantaneous bandwidth of the communication system is required to be restrained. Therefore, a large number of researchers in the field are attracted to develop the technical research of the terahertz frequency band reconfigurable filter, and the aim of controlling the pass band of the system to adjust the center frequency along with the frequency hopping pattern is achieved. The reported terahertz reconfigurable filter mainly has technical schemes of super-surface, MEMS, graphene coating and the like, is limited by the mechanical processing technology and the loss characteristics of high frequency bands of organic materials, and has the bad performances of high insertion loss, limited regulation and control range and the like.
Disclosure of Invention
The technical problems solved by the application are as follows: the utility model provides a solve the not enough of prior art, this patent discloses a terahertz of plane mask structure reconfigurable filter, has realized the nimble reconfiguration of terahertz frequency channel filter's center frequency and passband bandwidth. Meanwhile, the high-precision semiconductor micromachining process and the low-loss metal guided wave structure are combined, so that the parameters of the filter are accurate and controllable, the transmission is low in insertion loss and excellent in performance, and the center frequency and the passband bandwidth of the high-precision semiconductor micromachining device can be regulated and controlled in a large range through proper parameter adjustment.
The application adopts the following technical scheme:
a terahertz reconfigurable filter of a planar mask structure includes
The metal waveguide is provided with a mounting seam penetrating through the side surface of the metal waveguide along the length direction of the waveguide;
the filtering structure is inserted into the waveguide through the mounting seam and divides the inner cavity of the metal waveguide into two parts, and comprises a semiconductor substrate, a mask circuit and an adjustable medium which are sequentially arranged on one side of the semiconductor substrate, wherein the semiconductor substrate is provided with a through hole, and the mask circuit is connected with the metal waveguide through the through hole;
the center frequency and passband bandwidth of the filter are adjusted by adjusting the dielectric constant distribution of the tunable dielectric material.
The mask circuit is a metal layer formed of a plurality of sheet metals attached to the semiconductor substrate at intervals.
The single sheet metal of the metal layer is rectangular.
The metal layer is made of gold.
The through holes are opposite to the mounting seams of the metal waveguides.
One side of the adjustable medium, which is away from the mask circuit, is provided with a control electrode array circuit, the control electrode array circuit is arranged on the supporting plate, and the dielectric constant distribution of the adjustable medium material is regulated and controlled through the control electrode array circuit.
The surfaces of the mask circuit and the control electrode array circuit are respectively provided with a light-operated orientation agent layer.
The thickness of the photo-alignment agent layer is hundred micrometers.
The semiconductor substrate and the supporting plate are made of the same material.
A preparation method of a terahertz reconfigurable filter with a planar mask structure comprises the following steps:
preparing a filtering structure: preparing a mask circuit on a semiconductor substrate, preparing a control electrode array circuit on a supporting plate, preparing a coated photo-alignment agent on the surfaces of the mask circuit and the control electrode array circuit, forming a photo-alignment agent layer after curing, leading the two photo-alignment agent layers to be opposite, filling a liquid crystal material between the two photo-alignment agent layers, and sealing edges to form a filtering structure of a five-layer structure of the semiconductor substrate-the mask circuit-the liquid crystal-the control electrode-the semiconductor substrate;
preparing a metal waveguide with an installation slot in the middle;
and inserting the filter structure into the metal waveguide from the mounting seam for integration to obtain the reconfigurable filter.
In summary, the application at least comprises the following beneficial technical effects:
(1) The application can realize the double structure of the center frequency and the passband bandwidth of the terahertz filter. The center frequency and passband bandwidth can be adjusted with almost no loss of the performance of the filter by adjusting and controlling the dielectric constant distribution of the adjustable dielectric material;
(2) The processing precision requirement is reduced, the problems that the processing precision requirement is too high and the realization is difficult when the terahertz filter is processed by adopting an all-metal structure in the traditional scheme are effectively overcome, the problem of high transmission loss when the terahertz filter is processed by adopting an all-solid-state process is solved, and the transmission performance of the filter is improved;
(3) The terahertz filter fully plays the high-precision processing advantage of the semiconductor and the low-loss advantage of the metal guided wave structure, and has good tolerance performance and lower transmission loss.
Drawings
FIG. 1 is a schematic diagram of a terahertz reconfigurable filter scheme;
FIG. 2 is a terahertz reconfigurable filter electromagnetic model;
FIG. 3 is a terahertz reconfigurable filter planar mask circuit model;
FIG. 4 is a flow chart of the implementation of the planar mask circuit of the terahertz reconfigurable filter;
fig. 5 terahertz reconfigurable filter center frequency reconfigurable result.
Reference numerals illustrate: 1. a metal waveguide; 11. a mounting seam;
2. a filtering structure; 21. a semiconductor substrate; 22. a mask circuit; 221. sheet metal; 23. a liquid crystal; 24. a control electrode array circuit; 25. a support plate;
3. a photo-alignment agent layer.
Detailed Description
The application is described in further detail below with reference to the drawings and the specific embodiments.
In this embodiment, the tunable medium is exemplified by liquid crystal, and the semiconductor substrate is exemplified by quartz, and the specific implementation method is as follows.
The embodiment of the application discloses a terahertz reconfigurable filter with a planar mask structure and a preparation method thereof. Referring to fig. 1-3, the terahertz reconfigurable filter of the planar mask structure comprises a metal waveguide 1 provided with a mounting slot 11 and a filtering structure 2, wherein the mounting slot 11 penetrates through the side surface of the metal waveguide 1, and the filtering structure 2 penetrates through the mounting slot 11 to be inserted into the waveguide and divides the interior of the metal waveguide 1 into two chambers.
Referring to fig. 4, the filtering structure 2 includes a semiconductor substrate 21, a mask circuit 22 disposed on one side of the semiconductor substrate 21, a photo-alignment agent layer 3, and an adjustable medium including a liquid crystal 23, a photo-alignment agent layer 3, a control electrode array circuit 24, and a support plate 25 disposed in this order, the semiconductor substrate 21 is provided with a through hole, and the mask circuit 22 is connected to the metal waveguide 1 through the through hole. The semiconductor substrate 21 and the support plate 25 are both made of quartz, so that the loss of the filter to electromagnetic waves is reduced. The thickness of the photo-alignment agent layer 3 is in the order of hundred microns.
Referring to fig. 3, the mask circuit 22 is a metal layer formed by a plurality of sheet-shaped metals 221 embedded in the semiconductor substrate 21 at intervals, the metal layer is made of gold, and a single sheet-shaped metal 221 of the metal layer is rectangular. I.e. a right angle parallel stripe design, as shown in fig. 4. Specific: and (3) embedding sheet-shaped gold on the surface of the quartz substrate, wherein the gold of each embedded part is rectangular, and a plurality of rectangular gold are sequentially arranged to form a strip-shaped arranged metal layer. By controlling the bandwidth and spacing of the strips, mask circuit 22 can determine filter reference performance, including bandwidth and center frequency characteristics. Under the arrangement of the metal layer, the processing technology is simpler.
The dielectric constant distribution of the tunable dielectric material is regulated by controlling the electrode array circuit 24, and the center frequency and passband bandwidth of the filter are regulated by controlling the dielectric constant distribution of the tunable dielectric material.
By setting the structure of the filter, the Q value of the filter can reach hundreds to thousands, and the loss of the filter is lower.
The embodiment also discloses a preparation method of the terahertz reconfigurable filter with the planar mask structure, which comprises the following steps:
the first step: preparing a filter structure 2, referring to fig. 4, firstly, constructing a filter mask circuit 22 on one surface of a semiconductor substrate 21, manufacturing a through hole on the semiconductor substrate 21, and coating an photo-alignment agent on the mask circuit 22 to form a photo-alignment agent layer 3; then a control electrode array circuit 24 is constructed on the supporting plate 25, and the photo-alignment agent layer 3 is formed after the photo-alignment agent is coated on the control electrode array circuit 24 and solidified. And stacking the photo-alignment agent layers 3 of the two quartz substrates, filling a liquid crystal 23 material into the middle layers of the two photo-alignment agent layers 3, and sealing the edges. A five-layer structure filter structure 2 of a semiconductor substrate 21-mask circuit 22-liquid crystal 23-control electrode array circuit 24-support plate 25 is formed. The semiconductor substrate 21 and the support plate 25 are both quartz substrates. The mask circuit 22 is a metal layer formed of a plurality of sheet-shaped metals 221 embedded at intervals on the semiconductor substrate 21.
And a second step of: a standard metal waveguide 1 with an installation slot 11 in the middle is prepared, the transmission main mode of the metal waveguide 1 is TE10 mode, and the length is the standard that more than 3 wavelengths are reserved on two sides of a mask circuit 22.
And a third step of: the filtering structure 2 and the metal waveguide 1 are integrated, as shown in fig. 1 and 2, the filtering structure 2 is embedded into the metal waveguide 1 from the mounting seam 11, the filtering structure 2 is parallel to the length propagation direction of electromagnetic waves in the metal waveguide 1, the filtering structure 2 divides a cavity in the metal waveguide 1 into two parts, the through hole of the filtering structure 2 is opposite to the mounting seam 11 of the metal waveguide 1, and good contact between the through hole of the filtering structure 2 and the metal waveguide 1 ensures that the mask circuit 22 is stably connected with the metal waveguide 1 through the through hole.
The reconstruction of the filter center frequency can be realized by controlling the overall applied voltage of the control electrode array circuit 24, regulating and controlling the control voltage of the liquid crystal 23 material and changing the dielectric constant thereof. By controlling the local applied voltages of the various array regions of the control electrode array circuit 24, the dielectric constant distribution of the various regions of the liquid crystal 23 material is controlled, and a reconstruction of different bandwidths and a compensation of the center frequency can be achieved.
Specifically, the applied voltage of the control electrode array circuit 24 of the filter of this embodiment is adjusted to obtain 3 frequency-amplitude curves in fig. 5, the center position of the platform width of each curve of the 3 curves is the center frequency, the dielectric constants of the 3 curves are different, and it can be seen that the center frequencies of the 3 curves are different. It can be seen that as the dielectric constant of the tunable medium increases, the filter center frequency changes to the low frequency side.
The implementation principle of the application is as follows: electromagnetic waves enter from a wave inlet at one end of the metal waveguide 1, are transmitted along a cavity in the metal waveguide 1, and when the electromagnetic waves pass through the filtering structure 2, the filter mask circuit enables the waveguide cavity to present discontinuous change of electromagnetic wave transmission impedance, so that the waveguide cavity is provided with a plurality of frequency resonance points in the mask circuit action space, frequency selection can be completed, and the effect of the band-pass filter is finally achieved.
When the center frequency and passband bandwidth of the filter are reconstructed, the whole applied voltage of the control electrode array circuit 24 is controlled, the control voltage of the liquid crystal 23 material is regulated and controlled, the dielectric constant of the liquid crystal is changed, and the reconstruction of the center frequency of the filter is realized. The local applied voltages of the different array areas of the control electrode array circuit 24 are controlled, the dielectric constant distribution of the different areas of the liquid crystal 23 material is controlled, and the reconstruction of different bandwidths and the compensation of the center frequency are realized.
The application combines the advantages of low loss of the metal structure and high processing technology of the semiconductor structure, and also shows good tolerance for equipment precision. Through proper regulation and control, the filter realized by the method can realize low loss, reconfigurable center frequency and reconfigurable bandwidth, and has wide application prospect.
It will be appreciated by those of ordinary skill in the art that the examples described herein are intended to aid the reader in understanding the principles of the application and that the scope of the application is not limited to such specific statements and embodiments. Those of ordinary skill in the art can make various other specific modifications and combinations from the teachings of the present disclosure without departing from the scope of the application.
Claims (9)
1. A terahertz reconfigurable filter with a planar mask structure is characterized in that: comprising
A metal waveguide (1) provided with an installation slot (11) penetrating through the side surface of the metal waveguide (1);
the filtering structure (2) is inserted into the waveguide through the mounting seam (11) and divides the inner cavity of the metal waveguide (1) into two parts, and comprises a semiconductor substrate (21), a mask circuit (22) arranged on one side of the semiconductor substrate (21), a light-operated orientating agent layer (3) and an adjustable medium, wherein the adjustable medium comprises a liquid crystal (23), the light-operated orientating agent layer (3), a control electrode array circuit (24) and a supporting plate (25) which are sequentially arranged, the semiconductor substrate (21) is provided with a through hole, and the mask circuit (22) is connected with the metal waveguide (1) through the through hole;
the mask circuit (22) is a metal layer formed by a plurality of sheet-shaped metals (221) which are adhered to the semiconductor substrate (21) at intervals;
the center frequency and passband bandwidth of the filter are adjusted by adjusting the dielectric constant distribution of the tunable dielectric material.
2. The terahertz reconfigurable filter of claim 1, wherein: the individual sheet metal (221) of the metal layer is rectangular.
3. The terahertz reconfigurable filter of claim 1, wherein: the metal layer is made of gold.
4. The terahertz reconfigurable filter of claim 1, wherein: the through holes are opposite to the mounting seam (11) of the metal waveguide (1).
5. The terahertz reconfigurable filter of claim 1, wherein: one side of the adjustable medium, which is away from the mask circuit (22), is provided with a control electrode array circuit (24), the control electrode array circuit (24) is arranged on a supporting plate (25), and the dielectric constant distribution of the adjustable medium material is regulated and controlled through the control electrode array circuit (24).
6. The terahertz reconfigurable filter of claim 5, wherein: the surfaces of the mask circuit (22) and the control electrode array circuit (24) are respectively provided with a light-operated orientation agent layer (3).
7. The terahertz reconfigurable filter of claim 6, wherein: the thickness of the photo-control orientation agent layer (3) is in the order of hundred micrometers.
8. The terahertz reconfigurable filter of claim 5, wherein: the semiconductor substrate (21) and the support plate (25) are made of the same material.
9. The method for preparing the terahertz reconfigurable filter with the planar mask structure according to any one of claims 1 to 8, wherein the method is characterized by comprising the following steps: comprising
Preparing a filter structure (2): preparing a mask circuit (22) on a semiconductor substrate (21), preparing a control electrode array circuit (24) on a supporting plate (25), then preparing and coating photo-alignment agents on the surfaces of the mask circuit (22) and the control electrode array circuit (24), forming a photo-alignment agent layer (3) after solidification, leading the two photo-alignment agent layers (3) to be opposite, filling a liquid crystal (23) material between the two photo-alignment agent layers (3), and sealing edges to form a filtering structure (2) of a five-layer structure of the semiconductor substrate (21) -the mask circuit (22) -the liquid crystal (23) -the control electrode array circuit (24) -the supporting plate (25);
preparing a metal waveguide (1) with an installation slot (11) in the middle;
the filter structure (2) is inserted into the metal waveguide (1) from the mounting seam (11) for integration to obtain the reconfigurable filter.
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| CN202210899470.0A CN115332743B (en) | 2022-07-28 | 2022-07-28 | Terahertz reconfigurable filter with planar mask structure and preparation method |
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| CN202210899470.0A CN115332743B (en) | 2022-07-28 | 2022-07-28 | Terahertz reconfigurable filter with planar mask structure and preparation method |
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