CN115274898A - Latticed crystal silicon BIPV building component - Google Patents
Latticed crystal silicon BIPV building component Download PDFInfo
- Publication number
- CN115274898A CN115274898A CN202210917019.7A CN202210917019A CN115274898A CN 115274898 A CN115274898 A CN 115274898A CN 202210917019 A CN202210917019 A CN 202210917019A CN 115274898 A CN115274898 A CN 115274898A
- Authority
- CN
- China
- Prior art keywords
- crystalline silicon
- power generation
- crystal silicon
- latticed
- cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 54
- 239000010703 silicon Substances 0.000 title claims abstract description 54
- 239000013078 crystal Substances 0.000 title claims abstract description 48
- 238000013084 building-integrated photovoltaic technology Methods 0.000 title claims abstract description 34
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 105
- 238000010248 power generation Methods 0.000 claims abstract description 61
- 239000011521 glass Substances 0.000 claims abstract description 9
- 239000000178 monomer Substances 0.000 claims abstract description 9
- 238000003466 welding Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 2
- 210000004027 cell Anatomy 0.000 description 31
- 238000010586 diagram Methods 0.000 description 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000002313 adhesive film Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 210000002858 crystal cell Anatomy 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- -1 notacoria Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A30/00—Adapting or protecting infrastructure or their operation
- Y02A30/60—Planning or developing urban green infrastructure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
The application provides a grid-shaped crystalline silicon BIPV building component which comprises inner-layer glass, a back film, crystalline silicon power generation units, a front film and outer-layer glass, wherein each crystalline silicon power generation unit comprises a plurality of crystalline silicon power generation monomers; the crystalline silicon power generation monomer comprises a plurality of crystalline silicon battery pieces which are distributed in a grid structure, lighting areas are formed among the crystalline silicon battery pieces which are distributed circumferentially, and the area of any lighting area is not less than one half of the area of any crystalline silicon battery piece. The utility model provides a latticed crystal silicon battery piece structure of arranging combines the regional area of daylighting satisfy with the crystal silicon battery piece area between account for than, daylighting area is big, and daylighting performance obtains showing and promotes, satisfies the daylighting demand of building. In addition, the method and the device have the advantages of good adaptability to the architectural style, good attractiveness and wide application scenes.
Description
Technical Field
The application relates to the technical field of photovoltaic building equipment, in particular to a latticed crystal silicon BIPV building component.
Background
At present, carbon reduction in the building field accounting for 51.3% of national carbon emission has an important influence on the development of high quality in China towards a low-carbon society in all directions. The integrated application of clean energy represented by photovoltaic in the building field becomes an important way for solving the high energy consumption of buildings. Thus, BIPV is increasingly used.
However, difficulties have been encountered in urban promotion due to the lighting problems of conventional BIPV building elements. At present, for BIPV building components with lighting requirements, the scheme of increasing the inter-sheet distance and inter-string distance on the basis of the original arrangement is generally adopted, the lighting problem is not obviously improved, and the attractiveness is not good.
Disclosure of Invention
The application provides a latticed crystal silicon BIPV building component, has solved the not good technical problem of above-mentioned daylighting effect.
The application provides a latticed crystal silicon BIPV building component, which comprises inner-layer glass, a back film, a crystal silicon power generation unit, a front film and outer-layer glass, wherein the crystal silicon power generation unit comprises a plurality of crystal silicon power generation monomers, and the adjacent crystal silicon power generation monomers are electrically connected; the crystalline silicon power generation monomer comprises a plurality of crystalline silicon battery pieces which are distributed in a grid structure, lighting areas are formed among the crystalline silicon battery pieces which are distributed in the circumferential direction, and the area of any lighting area is not smaller than one half of the area of any crystalline silicon battery piece.
In some embodiments, the crystalline silicon cell is a whole single cell, a half single cell, a third single cell, or an nth single cell.
In some embodiments, all the crystalline silicon power generation units comprise first crystalline silicon power generation single bodies, and each crystalline silicon cell piece of the first crystalline silicon power generation single bodies is distributed at odd-numbered positions of odd-numbered rows and even-numbered positions of even-numbered rows.
In some embodiments, the crystalline silicon power generation units all include second crystalline silicon power generation cells, and the crystalline silicon cells of the second crystalline silicon power generation cells are distributed in even-numbered positions of odd-numbered rows and odd-numbered positions of even-numbered rows.
In some embodiments, the crystalline silicon power generation unit comprises a first crystalline silicon power generation unit and a second crystalline silicon power generation unit, and the first crystalline silicon power generation unit and the second crystalline silicon power generation unit are alternately distributed in the transverse direction and the longitudinal direction.
In some embodiments, the crystalline silicon cell is embodied as a crystalline silicon cell string.
In some embodiments, the crystalline silicon battery string comprises a plurality of crystalline silicon battery pieces and a plurality of conducting welding strips, wherein the conducting welding strips are used for connecting all the crystalline silicon battery pieces in the same row in series to form the crystalline silicon battery string, and connecting the tail and the head of each crystalline silicon battery string in an adjacent row in series in sequence; or the silicon crystal battery pieces in the same row are connected in series, and then the tail ends of the silicon crystal battery strings in adjacent rows are connected in series in sequence.
In some embodiments, a decorative layer is attached to the backing film to conform to a building.
In some embodiments, the decorative layer is embodied as a triangular, and/or quadrangular, and/or polygonal structure.
The latticed crystal silicon BIPV building component that this application provided has following technical advantage:
1. the latticed crystalline silicon cell arrangement structure is combined with the lighting area to meet the occupation ratio of the area of the crystalline silicon cell, the lighting area is enlarged, the lighting performance is obviously improved, and the lighting requirement is met;
2. the structure is changed for a short time, the assembly is convenient, and the production cost is saved.
3. The latticed lighting areas formed by the battery pieces at intervals have good adaptability to the architectural style, good aesthetic property and wide application scenes.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the embodiments or the prior art descriptions will be briefly described below, it is obvious that the drawings in the following description are only the embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic diagram of a grid-type silicon BIPV building component according to a first embodiment of the present disclosure;
FIG. 2 is a schematic diagram of a lattice-type crystalline silicon BIPV building component according to a second embodiment of the present application;
FIG. 3 is a schematic diagram of a lattice-type silicon BIPV building component according to a third embodiment of the present application;
FIG. 4 is a schematic diagram of a single crystal silicon power generation unit according to a first embodiment of the present application;
FIG. 5 is a schematic diagram of a single crystal silicon power generation unit according to a second embodiment of the present application;
FIG. 6 is a schematic diagram of a single crystal silicon power generation unit according to a third embodiment of the present application;
FIG. 7 is a schematic diagram of a single crystal silicon power generation unit according to a fourth embodiment of the present application;
fig. 8 is a schematic view of the back film of fig. 5 with a decorative layer attached thereon.
The solar photovoltaic module comprises a 10-crystalline silicon power generation single body, a 101-crystalline silicon battery piece, a 102-lighting area, a 103-conduction welding strip and a 104-decoration layer.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In order to enable those skilled in the art to better understand the scheme of the present application, the present application will be described in further detail with reference to the accompanying drawings and the detailed description.
The application provides a latticed crystal silicon BIPV building element, including inlayer glass, notacoria, crystal silicon electricity generation unit, preceding membrane and outer glass, crystal silicon electricity generation unit includes a plurality of crystal silicon electricity generation monomer 10, electrical connection between each adjacent crystal silicon electricity generation monomer 10.
The single crystalline silicon power generation body 10 comprises a plurality of crystalline silicon battery pieces 101, each crystalline silicon battery piece 101 forms a grid-shaped structure, and blank areas among the crystalline silicon battery pieces 101 distributed in the circumferential direction form lighting areas 102, so that the whole crystalline silicon lighting alternate effect is achieved. The area of any lighting area 102 is not less than half of the area of any crystalline silicon cell 101.
The area ratio of the lighting region 102 to the crystalline silicon cell 101 may be designed according to lighting requirements or architectural scenes, and may be, for example, a ratio of 1.
The latticed crystal silicon BIPV building component of this application is good to the compatibility of battery piece, can be compatible the crystal silicon battery piece 101 of various sizes, reduces material cost. In addition, this application not only is applied to transparent double glass BIPV product, for example the ceiling etc. has better daylighting effect, is applied to opaque BIPV product moreover, can adjust different crystal silicon and blank area proportion according to the architectural style, has different fitment effects.
The crystalline silicon cell 101 in the present application may be a whole single cell, a half single cell, a third single cell, or an nth single cell.
The specific structure of the latticed crystal silicon BIPV building blocks in the present application is specifically described below.
Referring to fig. 1 and fig. 4, fig. 1 is a schematic diagram of a lattice-shaped crystalline silicon BIPV building component according to a first embodiment of the present application, and fig. 4 is a schematic diagram of a crystalline silicon power generation unit according to the first embodiment of the present application.
In a first specific embodiment, all the crystalline silicon power generation units include first crystalline silicon power generation single bodies, the crystalline silicon cell pieces 101 of the first crystalline silicon power generation single bodies are distributed at odd-numbered positions of odd-numbered rows and even-numbered positions of even-numbered rows, the crystalline silicon cell pieces 101 and the lighting area 102 are distributed at intervals, and the first crystalline silicon power generation single bodies are in communication connection.
Referring to fig. 2 in conjunction with fig. 5, fig. 2 is a schematic diagram of a lattice-type silicon BIPV building component according to a second embodiment of the present application; fig. 5 is a schematic diagram of a single crystal silicon power generation unit in a second embodiment of the present application.
In a second specific embodiment, all the crystalline silicon power generation units comprise second crystalline silicon power generation units, crystalline silicon cells 101 of the second crystalline silicon power generation units are distributed at even positions of odd-numbered rows and odd-numbered positions of even-numbered rows, the crystalline silicon cells 101 and the lighting area 102 are distributed at intervals, and the crystalline silicon power generation units are in communication connection with each other.
Referring to fig. 3, fig. 3 is a schematic diagram of a lattice-type silicon BIPV building component according to a third embodiment of the present application.
In a third specific embodiment, the crystalline silicon power generation unit comprises a first crystalline silicon power generation unit and a second crystalline silicon power generation unit, wherein each crystalline silicon cell 101 of the first crystalline silicon power generation unit is distributed at the odd-numbered position of the odd-numbered row and the even-numbered position of the even-numbered row, each crystalline silicon cell 101 of the second crystalline silicon power generation unit is distributed at the even-numbered position of the odd-numbered row and the odd-numbered position of the even-numbered row, and the first crystalline silicon power generation unit and the second crystalline silicon power generation unit are alternately distributed in the horizontal direction and the vertical direction.
The crystalline silicon cell 101 may be a crystalline silicon cell string, in addition to the above-described cell. The crystalline silicon battery string comprises a plurality of crystalline silicon battery pieces 101 and a plurality of conducting welding strips 103, wherein the conducting welding strips 103 are used for serially connecting all the crystalline silicon battery pieces 101 in the same row to form the crystalline silicon battery string, and sequentially serially connecting the tail ends of all the crystalline silicon battery strings in adjacent rows; or the silicon crystal cells 101 in the same row are connected in series, and then the silicon crystal cells in adjacent rows are connected in series in sequence from the end to the end.
Referring to fig. 6, fig. 6 is a schematic diagram of a single crystalline silicon power generation unit in a third embodiment of the present application.
In this embodiment, the component adopts the mode of 1/3 section to carry out the battery overall arrangement, and crystal silicon battery piece 101 is vertical to be set up, and horizontal crystal silicon battery piece 101 is connected through leading to weld the area 103, connects through leading to weld the area 103 between the adjacent row. The pure series connection mode is adopted for layout, and the area of the crystalline silicon battery area inside the solar cell is equal to the area of the lighting area 102.
Referring to fig. 7, fig. 7 is a schematic diagram of a single crystal silicon power generation unit in a fourth embodiment of the present application.
In this embodiment, the component adopts the mode of 1/2 section to carry out the battery overall arrangement, and crystal silicon battery piece 101 is vertical to be set up, and horizontal crystal silicon battery piece 101 is connected through leading to weld the area 103, connects through leading to weld the area 103 between the adjacent row. The pure series connection mode is selected for layout, and the area of the lighting area 102 is slightly smaller than that of the internal crystalline silicon battery area.
Referring to fig. 8, fig. 8 is a schematic view of the back film of fig. 5 with a decorative layer attached thereon. In order to adapt to different architectural styles and widen application scenes, a plurality of decorative layers 104 can be attached to the back film, and the decorative layers 104 can adopt back plates or adhesive films with different colors to present the appearance of the crystalline silicon and the color areas alternately, and can also adopt back plates or adhesive films with different shapes. For example, the decorative layer 104 is a colored transparent adhesive film, such as colored EVA or colored PVB, etc., which is colored red, yellow, blue, green, etc. The decoration layer 104 is matched with a building, so that the crystal silicon BIPV building component is more harmonious with the application environment, and has practicability and ornamental value.
It should be noted that, the latticed crystalline silicon BIPV building component, the arrangement mode of the crystalline silicon and the lighting phase to phase, in the present application, can be applied to all products using crystalline silicon cells, such as photovoltaic modules, crystalline silicon photovoltaic BIPV, and the like, and all fall within the protection scope of the present application.
It should be noted that in this specification, relational terms such as first and second, and the like are used solely to distinguish one entity from another entity without necessarily requiring or implying any actual such relationship or order between such entities.
The latticed crystal silicon BIPV building components provided by the present application are described in detail above. The principles and embodiments of the present application are described herein using specific examples, which are only used to help understand the method and its core idea of the present application. It should be noted that, for those skilled in the art, without departing from the principle of the present application, the present application can also make several improvements and modifications, and those improvements and modifications also fall into the protection scope of the claims of the present application.
Claims (9)
1. A latticed crystalline silicon BIPV building component comprises inner-layer glass, a back film, crystalline silicon power generation units, a front film and outer-layer glass, wherein each crystalline silicon power generation unit comprises a plurality of crystalline silicon power generation monomers (10), and every two adjacent crystalline silicon power generation monomers (10) are electrically connected; the crystalline silicon power generation single body (10) is characterized by comprising a plurality of crystalline silicon battery pieces (101) which are distributed in a grid structure, lighting areas (102) are formed among the crystalline silicon battery pieces (101) which are distributed circumferentially, and the area of any lighting area (102) is not less than one half of the area of any crystalline silicon battery piece (101).
2. The latticed crystalline silicon BIPV building component of claim 1, wherein the crystalline silicon cell (101) is a one-piece single cell, a half-piece single cell, a third-piece single cell, or a nth-piece single cell.
3. The latticed crystal silicon BIPV building component according to claim 2, wherein all the crystal silicon power generation units comprise first crystal silicon power generation cells, and the crystal silicon cells (101) of the first crystal silicon power generation cells are distributed at odd-numbered positions of odd-numbered rows and even-numbered positions of even-numbered rows.
4. The latticed crystalline silicon BIPV building component of claim 2, wherein said crystalline silicon power generation units all comprise second crystalline silicon power generation cells, and wherein crystalline silicon cells (101) of said second crystalline silicon power generation cells are distributed at even positions of odd rows and at odd positions of even rows.
5. The latticed crystal silicon BIPV building component of claim 2, wherein the crystal silicon power generation unit comprises first crystal silicon power generation cells and the second crystal silicon power generation cells, and the first crystal silicon power generation cells and the second crystal silicon power generation cells are alternately distributed in the transverse direction and the longitudinal direction.
6. Latticed crystalline silicon BIPV building component according to claim 1, wherein said crystalline silicon cell pieces (101) are embodied as strings of crystalline silicon cells.
7. The latticed crystal silicon BIPV building component of claim 6, wherein the crystal silicon cell string comprises a plurality of crystal silicon cells (101) and a plurality of conducting welding strips (103), the conducting welding strips (103) are used for connecting the crystal silicon cells (101) in the same row in series to form a crystal silicon cell string, and connecting the crystal silicon cells in adjacent columns in series end to end in sequence; or the silicon crystal battery pieces (101) in the same row are connected in series, and then the tail ends of the silicon crystal battery strings in adjacent rows are connected in series in sequence.
8. The latticed crystalline silicon BIPV building component of claim 1, wherein a decorative layer (104) is affixed to the backing film to conform to a building.
9. Latticed crystalline silicon BIPV building component according to claim 8, wherein said decorative layer (104) is embodied as a triangular, and/or quadrangular, and/or polygonal structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210917019.7A CN115274898A (en) | 2022-08-01 | 2022-08-01 | Latticed crystal silicon BIPV building component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210917019.7A CN115274898A (en) | 2022-08-01 | 2022-08-01 | Latticed crystal silicon BIPV building component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115274898A true CN115274898A (en) | 2022-11-01 |
Family
ID=83747675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210917019.7A Pending CN115274898A (en) | 2022-08-01 | 2022-08-01 | Latticed crystal silicon BIPV building component |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115274898A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100006205A (en) * | 2008-07-09 | 2010-01-19 | (주)텔리오솔라코리아 | Cigs solarcells module and manufacturing method thereof |
| JP3186560U (en) * | 2013-05-22 | 2013-10-17 | 株式会社エヌエスイー | Solar power plant |
| US20140102531A1 (en) * | 2012-10-16 | 2014-04-17 | Solexel, Inc. | Systems and methods for monolithically integrated bypass switches in photovoltaic solar cells and modules |
| JP2015208067A (en) * | 2014-04-18 | 2015-11-19 | 尾形 政徳 | Support stand for solar cell panel |
| US20170077869A1 (en) * | 2015-09-12 | 2017-03-16 | Imec Vzw | Reconfigurable Photovoltaic Module |
| JP2019134523A (en) * | 2018-01-29 | 2019-08-08 | シャープ株式会社 | Solar cell module arrangement structure and solar power generation system |
| CN114078985A (en) * | 2020-08-12 | 2022-02-22 | 湖北晶日光能科技股份有限公司 | Manufacturing method of distributed color curtain wall assembly |
| CN114171616A (en) * | 2021-09-29 | 2022-03-11 | 永臻科技股份有限公司 | Crystal silicon BIPV building component and manufacturing method thereof |
-
2022
- 2022-08-01 CN CN202210917019.7A patent/CN115274898A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100006205A (en) * | 2008-07-09 | 2010-01-19 | (주)텔리오솔라코리아 | Cigs solarcells module and manufacturing method thereof |
| US20140102531A1 (en) * | 2012-10-16 | 2014-04-17 | Solexel, Inc. | Systems and methods for monolithically integrated bypass switches in photovoltaic solar cells and modules |
| JP3186560U (en) * | 2013-05-22 | 2013-10-17 | 株式会社エヌエスイー | Solar power plant |
| JP2015208067A (en) * | 2014-04-18 | 2015-11-19 | 尾形 政徳 | Support stand for solar cell panel |
| US20170077869A1 (en) * | 2015-09-12 | 2017-03-16 | Imec Vzw | Reconfigurable Photovoltaic Module |
| JP2019134523A (en) * | 2018-01-29 | 2019-08-08 | シャープ株式会社 | Solar cell module arrangement structure and solar power generation system |
| CN114078985A (en) * | 2020-08-12 | 2022-02-22 | 湖北晶日光能科技股份有限公司 | Manufacturing method of distributed color curtain wall assembly |
| CN114171616A (en) * | 2021-09-29 | 2022-03-11 | 永臻科技股份有限公司 | Crystal silicon BIPV building component and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100472785C (en) | Solar battery LED interlayer for photoelectric curtain wall glass | |
| CN102272394A (en) | Photovoltaic tile | |
| CN113611766A (en) | Solar cell module and preparation method thereof | |
| CN100429793C (en) | Amorphous silicon solar cell doubling glass assembly | |
| CN114171616A (en) | Crystal silicon BIPV building component and manufacturing method thereof | |
| CN115274898A (en) | Latticed crystal silicon BIPV building component | |
| CN212517220U (en) | Photovoltaic and LED light-emitting component | |
| CN114078985A (en) | Manufacturing method of distributed color curtain wall assembly | |
| CN209981246U (en) | BIPV assembly | |
| CN205723567U (en) | The double glass photovoltaic curtain wall light-transmitting component of novel crystal silicon | |
| CN202142563U (en) | Light-transmitting film solar cell module | |
| CN114584049A (en) | Anti-dazzle photovoltaic tile and mounting process | |
| CN216213485U (en) | Crystal silicon BIPV building component | |
| CN111863997A (en) | Photovoltaic and LED light-emitting component | |
| CN205564773U (en) | Two glass printing opacity subassemblies | |
| CN105870231B (en) | The double glass photovoltaic curtain wall light-transmitting components of novel crystal silicon | |
| CN205050850U (en) | Colorful photovoltaic assembly | |
| CN212230443U (en) | Color photovoltaic module | |
| CN214956906U (en) | Laminated photovoltaic building integrated assembly with fully-serial side outgoing lines | |
| CN210443576U (en) | Photovoltaic module | |
| CN207265955U (en) | Frame for solar-energy photo-voltaic cell curtain wall | |
| CN220233209U (en) | Corrugated light-weight shingled photovoltaic module | |
| CN210073888U (en) | Photovoltaic assembly with odd number of strings | |
| CN208352307U (en) | A kind of high double glass imbrication components | |
| CN214410745U (en) | U type glass photovoltaic photoelectric display subassembly, assembly and decoration outer wall |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |