CN113697761B - Resonant pressure sensitive chip probe of isolation packaging structure and packaging method thereof - Google Patents
Resonant pressure sensitive chip probe of isolation packaging structure and packaging method thereof Download PDFInfo
- Publication number
- CN113697761B CN113697761B CN202110983367.XA CN202110983367A CN113697761B CN 113697761 B CN113697761 B CN 113697761B CN 202110983367 A CN202110983367 A CN 202110983367A CN 113697761 B CN113697761 B CN 113697761B
- Authority
- CN
- China
- Prior art keywords
- pressure sensitive
- sensitive chip
- tube seat
- medium
- probe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0058—Packages or encapsulation for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00325—Processes for packaging MEMS devices for reducing stress inside of the package structure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0627—Protection against aggressive medium in general
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L27/00—Testing or calibrating of apparatus for measuring fluid pressure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M3/00—Investigating fluid-tightness of structures
- G01M3/02—Investigating fluid-tightness of structures by using fluid or vacuum
- G01M3/26—Investigating fluid-tightness of structures by using fluid or vacuum by measuring rate of loss or gain of fluid, e.g. by pressure-responsive devices, by flow detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/025—Measuring very high resistances, e.g. isolation resistances, i.e. megohm-meters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
A resonance pressure sensitive chip probe of an isolation packaging structure and a packaging method thereof relate to a probe and a packaging method thereof. The invention aims to solve the problem that the existing resonant pressure sensitive chip has low Q value, and the problem that the measurement accuracy and the long-term stability of the packaging method are reduced. The kovar alloy pins are arranged on the lead holes, the silicon resonance pressure sensitive chip is arranged on the bonding surface of the chip and is provided with a gap, and the silicon resonance pressure sensitive chip is connected with the kovar alloy pins through electrode bonding leads; the corrugated diaphragm is arranged on the contact surface of the corrugated diaphragm, the compression ring is pressed on the corrugated diaphragm, and the isolation medium is filled in a closed cavity formed among the gap, the probe medium transmission channel, the corrugated diaphragm and the sealing tube seat. The packaging method comprises the following steps: and (3) carrying out secondary packaging on the resonant layer to enable the silicon resonant pressure sensitive chip to work in an isolation medium. The invention is used for measuring pressure and packaging the pressure chip probe.
Description
Technical Field
The invention relates to a resonance pressure sensitive chip probe and a packaging method thereof, in particular to a resonance pressure sensitive chip probe with an isolation packaging structure and a packaging method thereof, belonging to the field of MEMS resonance type pressure sensors.
Background
The silicon resonance pressure sensor indirectly measures pressure by measuring the change of the natural frequency of silicon, has the accuracy higher than that of a common pressure sensor by 1-2 orders of magnitude, works reliably and has good stability and repeatability. The traditional silicon resonance pressure sensor realizes pressure measurement by directly contacting the measured pressure, and can be suitable for high-precision pressure measurement of clean gas; when the pressure of the measured pressure environment is in a highly corrosive liquid or gas environment (sea water, oil circuit, etc.), the traditional silicon resonance pressure sensor works in a corrosive state for a long time, which easily causes structural damage of the silicon resonance pressure probe and corrosion of the pressure chip, and causes performance reduction or sensor failure.
Meanwhile, the core part of the silicon resonant pressure sensor is a resonator, the Q value is a core index for evaluating the resonator, and the larger the Q value is, the better the performance of the resonator is. The stable packaging environment can ensure that the resonator works with a fixed Q value, thereby ensuring that the silicon resonant pressure sensor has high stability. Leak rate is an important parameter for the stability performance of the resonant pressure sensor chip. The most common pressure absolute measurement die seal is made by silicon-silicon bonding, silicon-glass bonding, and other crystalline material bonding.
The intensity and rigidity of the supporting beam of the existing resonance pressure sensitive chip are low, the resonance frequency is low, and therefore the core index Q value is low, and the measurement accuracy and application range of the existing resonance pressure sensitive chip are affected. Meanwhile, the existing packaging method generally adopts the absolute pressure cavity to be exposed in the atmospheric pressure range, so that the leak rate of the sealing cavity of the high-precision absolute pressure sensor is increased, the pressure in the vacuum cavity is increased, the signal output value of the sensor chip is directly influenced, and the problems of reduced measurement precision and long-term stability of the sensor chip are caused.
In summary, the existing resonant pressure sensitive chip has the problems of low Q value, and influence on the measurement accuracy and application range thereof, and the existing packaging method has the problems of reduced measurement accuracy and long-term stability.
Disclosure of Invention
The invention aims to solve the problems that the existing resonant pressure sensitive chip has low Q value and affects the measurement accuracy and the application range, and the existing packaging method has the problems of reduced measurement accuracy and long-term stability. And further provides a resonant pressure sensitive chip probe of an isolation packaging structure and a packaging method thereof.
The technical scheme of the invention is as follows: the resonance pressure sensitive chip probe of the isolation packaging structure comprises a compression ring, a corrugated membrane, a silicon resonance pressure sensitive chip, kovar alloy pins, electrode bonding leads, a probe medium transmission channel, a sealing tube seat and an isolation medium, wherein the upper end surface of the sealing tube seat is a corrugated membrane contact surface, a stepped groove is formed in the corrugated membrane contact surface, the upper stepped surface of the stepped groove is a lead hole surface, the lower stepped surface is a chip bonding surface, the probe medium transmission channel is formed in the chip bonding surface, a plurality of lead holes are vertically formed in the lead hole surface, and an annular sealing groove is formed in the middle upper part of the outer cylindrical surface of the sealing tube seat;
the kovar alloy pins are vertically arranged on lead holes of the sealing tube seat in a glass sintering mode, the silicon resonance pressure sensitive chip is arranged on a chip bonding surface of the sealing tube seat in an adhesive mode, a gap is reserved between the silicon resonance pressure sensitive chip and the side wall of the stepped groove, and the silicon resonance pressure sensitive chip is connected with the kovar alloy pins through electrode bonding leads; the corrugated diaphragm is arranged on the contact surface of the corrugated diaphragm, the compression ring is pressed on the corrugated diaphragm, and the isolation medium is filled in a closed cavity formed among the gap, the probe medium transmission channel, the corrugated diaphragm and the sealing tube seat.
The invention also provides a packaging method, which comprises the following steps:
step one: manufacturing and cleaning a sealing tube seat;
the glass slurry sinters the lead hole and the upper and lower pins in the sealing tube seat together to form a sealing pin structure, and the sealing tube seat is made of stainless steel;
respectively clamping a silk fabric cleaning sealing tube seat adhered with acetone and absolute ethyl alcohol by using stainless steel tweezers with the heads coated with polytetrafluoroethylene, cleaning the sealing tube seat for more than 20s by using absolute ethyl alcohol, and drying in a drying oven; placing the silicon resonance pressure sensitive chip into acetone and absolute ethyl alcohol in sequence, respectively carrying out ultrasonic cleaning on the sealing tube seat and the silicon resonance pressure sensitive chip for 15min, and placing the special fixture ceramic ring into acetone and absolute ethyl alcohol in sequence for ultrasonic cleaning for 15+/-3 min;
step two: gluing and bonding;
fixing a sealing tube seat on a fixture, picking 730 glue by using a toothpick or using an automatic glue dispenser to uniformly point 6 points on the sealing tube seat according to the appearance of a silicon resonance pressure sensitive chip, embedding the silicon resonance pressure sensitive chip in the sealing tube seat, tightly pressing the upper part of a chip upper cover of the silicon resonance pressure sensitive chip by using a ceramic rod to ensure that an external pressure hole on the sealing tube seat corresponds to a pressure sensing through hole of a stress isolation layer, continuously picking 730 glue by using the toothpick or using an automatic glue dispenser to carry out glue dispensing, protecting a kovar alloy pin corresponding to a through hole of a ceramic ring of a special fixture, and taking out the ceramic ring after the glue is coated;
step three: curing the glue;
placing the sealing tube seat bonded with the silicon resonance pressure sensitive chip in the second step in a constant temperature and humidity environment for curing for 20-30 hours;
step four: bonding electrode bonding wires;
step four, first: fixing the sealing tube seat on a fixture, and welding the electrode bonding lead and the extraction electrode together at a position where the diameter of the electrode bonding lead on the surface of the extraction electrode is 2.5 times as large as that of the tip of the chopper;
step four, two: welding the other end of the electrode bonding wire on the kovar alloy pin through a hot welding pen, wherein the length of the electrode bonding wire is automatically formed when two points are pressed and welded;
and step four, three: carrying out a breaking force test on the electrode bonding lead until the breaking force meets the design requirement;
step five: performing insulation test on the Kovar alloy pins and the sealing tube seat;
an insulation resistance tester is adopted to test insulation resistance between each pin of the kovar alloy pins and the sealing tube seat, and the resistance is larger than a design limit value;
step six: testing the basic performance of the silicon resonance pressure sensitive chip;
the water absorbing ball is adopted to blow the pressure guiding hole, the pressure change is less than hundreds of hertz, and meanwhile, the temperature frequency is not changed; at this time, the silicon resonance pressure sensitive chip meets the design requirement;
step seven: welding the compression ring and the corrugated diaphragm on the sealing tube seat;
fixing a sealing tube seat on a clamp, placing a corrugated diaphragm on the contact surface of the corrugated diaphragm, placing a compression ring on the corrugated diaphragm, then welding by using argon arc or electron beam, and then performing penetration test; repeating the fifth step;
step eight: oiling the sealed cavity in the sealed tube seat to carry out oil seal;
step eight, first: the BYS-II type double-chamber liquid sealing device is adopted to inject isolation medium into a closed cavity in a sealing tube seat, and the vacuum degree is less than 10 -9 Pa, wherein the isolation medium is inert organic liquid;
step eight, two: firstly sealing a medium injection hole with the diameter of 1.3mm by using a phi 2 steel ball, and then sealing and welding the medium injection hole filled with isolation medium by using energy storage welding;
thus, the packaging of the resonant pressure sensitive chip probe of the isolation packaging structure is completed;
step nine: electrically testing the resonance pressure sensitive chip probe of the packaged isolation packaging structure;
performing electrical test under constant normal pressure, and stabilizing the resonance pressure sensitive chip probe to be qualified in less than 3 seconds when the resonance pressure sensitive chip probe does not generate frequency hopping phenomenon and the frequency changes towards one direction;
step ten: performing pressure fatigue and aging tests on the resonance pressure sensitive chip probe of the packaged isolation packaging structure;
the resonance pressure sensitive chip probe is arranged on the clamp and is connected with the pneumatic fatigue machine or the hydraulic fatigue machine, the fatigue times are 5000/10000, and the temperature aging experiment is carried out in a high-low temperature test box, so that the internal stress of the resonance pressure sensitive chip probe is released together, and the output stability of the resonance pressure sensitive chip of the isolation packaging structure is improved;
step eleven: performing air tightness detection on the resonance pressure sensitive chip probe of the packaged isolation packaging structure;
connecting the resonance pressure sensitive chip probe with a pressure controller for air tightness detection, wherein the pressure change value is not more than +/-2 Pa, and the air tightness of the resonance pressure sensitive chip probe is qualified at the moment;
step twelve: and (3) performing laser marking and screening on the resonance pressure sensitive chip probe of the packaged isolation packaging structure, and transferring to the next production stage.
Compared with the prior art, the invention has the following effects:
1. the invention adopts the isolation packaging technology, the silicon resonance pressure chip is isolated from the external environment and is completely operated in an isolation medium, so that the resonance pressure sensitive chip probe can also realize high-precision pressure measurement in a severe environment, and the reliability of the resonance pressure sensitive chip probe in the complex environment is improved; the silicon resonance pressure chip is packaged in a stable isolation medium, has a fixed Q value, and meanwhile, as the isolation medium does not enter the absolute pressure chamber, the resonance pressure sensitive chip probe has very low leakage rate, and the long-term stability of the sensor is improved.
2. The invention provides a silicon resonance pressure sensitive chip probe, which is characterized in that a resonant layer is subjected to secondary packaging (wherein the primary packaging means that the resonant layer is arranged between a chip upper cover and a silicon substrate, and the secondary packaging means that the whole silicon resonance pressure sensitive chip is subjected to oil sealing), so that the silicon resonance pressure sensitive chip works in an isolation medium, high-precision pressure measurement in a corrosion environment is realized, and the reliability of the silicon resonance pressure sensitive chip probe in a severe environment is improved; meanwhile, as the isolation medium does not enter the absolute cavity, the silicon resonance pressure chip has very low leakage rate, so that the stability of the silicon resonance pressure sensor is improved.
3. The invention is based on the secondary isolation packaging of the chip probe, so that the silicon resonance pressure sensitive chip 3 realizes indirect pressure measurement through the deformation of the isolation medium 8 in a severe environment (the indirect pressure measurement refers to the transmission of pressure to the silicon resonance pressure sensitive chip 3 through the isolation medium and the indirect pressure measurement is not direct contact measurement); meanwhile, the isolation medium 8 cannot enter the resonant layer 302, so that the leakage rate of the silicon resonant pressure sensitive chip 3 can be effectively reduced.
4. According to the silicon resonance pressure sensitive probe prepared by the invention, the silicon resonance pressure sensitive chip 3 is packaged in the sealing tube seat 7 filled with the isolation medium 8, and the isolation medium 8 completely wraps the silicon resonance pressure sensitive chip 3, so that the outside of the silicon resonance pressure sensitive chip 3 is in a mechanical balance state, the connection pressure between the lower surface of the isolation layer of the stress isolation layer 303 and the chip bonding surface 702 of the sealing tube seat 7 is reduced, the packaging stress is effectively reduced, the strength of a sealing surface is increased, and the measurement range of the silicon resonance pressure sensitive probe is expanded; the invention changes the pressure sensing direction of the silicon resonance pressure sensitive probe at the same time, realizes front pressure sensing by back pressure sensing, and reduces the subsequent sensor installation difficulty.
Drawings
FIG. 1 is a full cross-sectional view of a silicon resonant pressure sensitive chip probe of the isolated package structure of the present invention;
FIG. 2 is a top view of a corrugated diaphragm; FIG. 3 is a front cross-sectional view of FIG. 2;
FIG. 4 is a front cross-sectional view of a silicon resonant pressure sensitive chip;
FIG. 5 is a front cross-sectional view of a kovar pin;
FIG. 6 is a top view of a probe medium transfer passage;
fig. 7 is a front sectional view of the seal stem 7;
fig. 8 is a top view of the resonant layer 302.
Detailed Description
The technical scheme of the invention is not limited to the specific embodiments listed below, and also comprises any reasonable combination of the specific embodiments.
The first embodiment is as follows: referring to fig. 1 to 8, a resonant pressure-sensitive chip probe of an isolation package structure according to this embodiment includes a pressure ring 1, a corrugated diaphragm 2, a silicon resonant pressure-sensitive chip 3, kovar alloy pins 4, electrode bonding wires 5, a probe medium transfer channel 6, a seal tube seat 7, and an isolation medium 8, wherein the upper end surface of the seal tube seat 7 is a corrugated diaphragm contact surface 701, a step groove is formed on the corrugated diaphragm contact surface 701, the upper step surface of the step groove is a lead hole surface 704, the lower step surface is a chip bonding surface 702, the probe medium transfer channel 6 is formed on the chip bonding surface 702, a plurality of lead holes 703 are vertically formed on the lead hole surface 704, and an annular seal groove 705 is formed at the middle upper portion of the outer cylindrical surface of the seal tube seat 7; the kovar alloy pins 4 are vertically arranged on the lead holes 703 of the sealing tube seat 7 in a glass sintering mode, the silicon resonance pressure sensitive chip 3 is arranged on the chip bonding surface 702 of the sealing tube seat 7 in an adhesive mode, a gap is reserved between the silicon resonance pressure sensitive chip 3 and the side wall of the stepped groove, and the silicon resonance pressure sensitive chip 3 and the kovar alloy pins 4 are connected through electrode bonding leads 5; the corrugated diaphragm 2 is mounted on the corrugated diaphragm contact surface 701, the compression ring 1 is pressed on the corrugated diaphragm 2, and the isolation medium 8 is filled in the closed cavity formed among the gap, the probe medium transmission channel 6, the corrugated diaphragm 2 and the seal tube seat 7.
The second embodiment is as follows: referring to fig. 4, a silicon resonance pressure sensitive chip 3 of the present embodiment includes a chip upper cover 301, a resonant layer 302, a silicon substrate 3021 and a stress isolation layer 303, where the chip upper cover 301, the resonant layer 302, the silicon substrate 3021 and the stress isolation layer 303 are sequentially connected from top to bottom and made into a whole, and an inverted trapezoidal pressure sensing groove is formed on a lower end surface of the silicon substrate 3021, where an insulating chamber is formed between the chip upper cover 301 and the silicon substrate 3021, and the resonant layer 302 is located in the insulating chamber. By the arrangement, the inverted trapezoid pressure sensing groove on the lower end face of the silicon substrate 3021 is convenient for accurately sensing medium pressure and transmitting the medium pressure to the resonant layer 302, meanwhile, an absolute pressure chamber formed between the silicon substrate 3021 and the silicon substrate 3021 is used for protecting the resonant layer 302, and resistance of other mediums received by the resonant layer 302 in a working state is avoided, so that measurement accuracy of the probe is affected. Other components and connection relationships are the same as those of the first embodiment.
And a third specific embodiment: the present embodiment will be described with reference to fig. 4, in which a pressure-sensitive through hole 3031 is formed in the middle of the stress isolation layer 303. By such arrangement, pressure is conveniently transmitted to the silicon substrate 3021 and then to the resonance layer 302, so as to achieve the purpose of pressure sensing. Other components and connection relationships are the same as those of the first or second embodiment.
The specific embodiment IV is as follows: referring to fig. 8, the resonant layer 302 of this embodiment includes four lead-out electrodes 3022, two driving electrodes 3023, a spare electrode 3024, two sensitive comb electrodes 3025, two stabilizing beams 3026, two cross beams 3027, anchor blocks 3028 and electrode passages 3029, the two driving electrodes 3023 are arranged in parallel up and down, one lead-out electrode 3022 is mounted on each of the left and right sides of each driving electrode 3023, one sensitive comb electrode 3025 is mounted on each of the opposite sides of the two driving electrodes 3023, one stabilizing beam 3026 is mounted on each of the inner sides of the two sensitive comb electrodes 3025, one cross beam 3027 is mounted on each of the inner sides of the two stabilizing beams 3026, an anchor block 3028 is mounted between the two cross beams 3027, and the anchor blocks 3028 and the spare electrode 3024 are connected through the electrode passages 3029. So set up, electrode passageway 3029 constitutes triangle-shaped stable structure, under the prerequisite of guaranteeing signal transmission, promotes the intensity that the electrode was admittedly propped up, can effectively promote the stability of resonance layer to be applicable to the deformation range that higher frequency vibration and pressure change arouse. Meanwhile, the anchor block 3028 is arranged, the side length of the force arm is increased, the torque generated by stress of the anchor block 3028 can be effectively improved, and the deformation of the rear end connected with the related stress beam is improved. Thereby improving the resonant frequency and increasing the resolution of the sensor. Other compositions and connection relationships are the same as any one of the first to third embodiments.
Fifth embodiment: the present embodiment will be described with reference to fig. 8, in which each of the tie beams 3027 has a Y-beam structure at its end. The Y-shaped beam structure with double fixed fulcrums is arranged in the way, so that a triangular stable structure is formed, the rigidity strength can be improved, and the reliability of the sensor is improved. Other compositions and connection relationships are the same as those in any one of the first to fourth embodiments.
Specific embodiment six: describing the present embodiment in conjunction with fig. 8, each stabilizing beam 3026 of the present embodiment includes two stabilizing units that are symmetrical left and right,
each stabilizing unit comprises a first connecting support beam 901, a first cable-stayed beam parallel support beam 901-1, a first cable-stayed beam vertical support beam 901-2, a first parallel support beam vertical beam 901-3, a first cable-stayed beam stabilizing beam 901-4 and a second cable-stayed beam stabilizing beam 901-5,
a trapezoid structure is formed among the first cable-stayed beam parallel support beam 901-1, the first cable-stayed beam stabilizing beam 901-4, the second cable-stayed beam stabilizing beam 901-5 and the sensitive comb electrode 3025, the first cable-stayed beam vertical support beam 901-2 and the first parallel support beam vertical beam 901-3 are vertical to the first cable-stayed beam parallel support beam 901-1, right triangles are formed between the first cable-stayed beam vertical support beam 901-2 and the first parallel support beam vertical beam 901-3 and the first cable-stayed beam stabilizing beam 901-4 and the second cable-stayed beam stabilizing beam 901-5 as well as between the first cable-stayed beam parallel support beam 901-1,
one end of the first connecting support beam 901 coincides with the intersection point of the first cable-stayed beam vertical support beam 901-2 and the first cable-stayed beam parallel support beam 901-1, and the other end of the first connecting support beam 901 coincides with the intersection point of the first parallel support beam vertical beam 901-3 and the second cable-stayed beam stabilizing beam 901-5. So set up, can form triangle bearing structure, the oblique pulling force of each supporting beam of increase syntonizing layer and sensitive broach electrode 3025 to increase mechanical vibration transmission intensity, improve chip vibration frequency, and then can effectively increase the measurement range, and reduced external disturbance, thereby promote stability. Other compositions and connection relationships are the same as those in any one of the first to fifth embodiments.
Seventh embodiment: describing the present embodiment with reference to fig. 6, the probe medium transfer passage 6 of the present embodiment includes a medium tank 601 and a medium injection hole 602,
the medium tank 601 is a linear deep tank structure, the medium tank 601 comprises a chip medium tank 6011, a first side wall medium pressure guiding tank 6012 and a second side wall medium pressure guiding tank 6013, the chip medium tank 6011 is horizontally arranged, the first side wall medium pressure guiding tank 6012 and the second side wall medium pressure guiding tank 6013 are vertically arranged, the first side wall medium pressure guiding tank 6012 and the second side wall medium pressure guiding tank 6013 are respectively connected with one end of the chip medium tank 6011 to form the medium tank 601, and the medium injection hole 602 is connected with the other end of the first side wall medium pressure guiding tank 6012.
The arrangement is convenient for plugging the isolation medium 8, and meanwhile, when the isolation medium 8 is injected, the isolation medium 8 can effectively encircle the silicon resonance pressure sensitive chip 3, so that the external medium pressure is accurately transmitted to the silicon resonance pressure sensitive chip 3, the leakage rate of the silicon resonance pressure sensitive chip 3 is reduced, and the silicon resonance pressure sensitive chip is effectively protected. Other compositions and connection relationships are the same as those in any one of the first to sixth embodiments.
Eighth embodiment: the packaging method according to the present embodiment is described with reference to fig. 1 to 8, and is characterized in that: it comprises the following steps:
step one: manufacturing and cleaning a sealing tube seat 7;
the glass slurry sinters the lead hole 703 and the upper and lower pins in the sealing tube seat 7 together to form a sealing pin structure, and the sealing tube seat 7 is made of stainless steel;
respectively clamping the silk fabric cleaning sealing tube seat 7 adhered with acetone and absolute ethyl alcohol by using stainless steel tweezers with the heads coated with polytetrafluoroethylene, then cleaning the silk fabric cleaning sealing tube seat with absolute ethyl alcohol for more than 20 seconds, and putting the silk fabric cleaning sealing tube seat into a drying oven for drying; placing the silicon resonance pressure sensitive chip 3 into acetone and absolute ethyl alcohol in sequence, respectively carrying out ultrasonic cleaning on the sealing tube seat 7 and the silicon resonance pressure sensitive chip 3 for 15min, and placing the special fixture ceramic ring into acetone and absolute ethyl alcohol in sequence for ultrasonic cleaning for 15+/-3 min;
step two: gluing and bonding;
fixing the sealing tube seat 7 on a fixture, picking 730 glue by using a toothpick or using an automatic glue dispenser to uniformly point 6 points on the sealing tube seat 7 according to the appearance of the silicon resonance pressure sensitive chip 3, embedding the silicon resonance pressure sensitive chip 3 in the sealing tube seat, tightly pressing the upper part of a chip upper cover 301 of the silicon resonance pressure sensitive chip 3 by using a ceramic rod to ensure that an external pressure hole on the sealing tube seat 7 corresponds to a pressure sensing through hole 3031 of a stress isolation layer 303, continuously picking 730 glue by using the toothpick or using an automatic glue dispenser to carry out glue dispensing, protecting the kovar alloy pins 4 by corresponding to the through holes of a ceramic ring of the special fixture, and taking out the ceramic ring after the glue is coated;
step three: curing the glue;
placing the sealing tube seat 7 bonded with the silicon resonance pressure sensitive chip 3 in the second step in a constant temperature and humidity environment for curing for 20-30 hours;
step four: bonding the electrode bonding wire 5;
step four, first: fixing the sealing tube seat 7 on a fixture, and welding the electrode bonding lead 5 and the extraction electrode 3022 together at a distance of 2.5 times the diameter of the electrode bonding lead 5 on the surface of the extraction electrode 3022 from the tip of the chopper;
step four, two: welding the other end of the electrode bonding wire 5 on the kovar alloy pin 4 through a hot welding pen, wherein the length of the electrode bonding wire 5 is automatically formed when two points are pressed and welded;
and step four, three: the electrode bonding lead 5 is subjected to a breaking force test until the breaking force meets the design requirement;
step five: performing insulation test on the Kovar alloy pins 4 and the sealing tube seat 7;
an insulation resistance tester is adopted to test insulation resistance between each pin of the kovar alloy pins 4 and the sealing tube seat 7, and the resistance is larger than a design limit value;
step six: basic performance test of the silicon resonance pressure sensitive chip 3;
the water absorbing ball is adopted to blow the pressure guiding hole, the pressure change is less than hundreds of hertz, and meanwhile, the temperature frequency is not changed; at this time, the silicon resonance pressure sensitive chip 3 satisfies the design requirement;
step seven: welding the compression ring 1 and the corrugated diaphragm 2 on the sealing tube seat 7;
fixing a sealing tube seat 7 on a clamp, placing a corrugated diaphragm 2 on the contact surface 701 of the corrugated diaphragm, placing a compression ring 1 on the corrugated diaphragm 2, then welding by argon arc or electron beam, and then performing penetration test; repeating the fifth step;
step eight: oiling the sealed cavity in the sealed tube seat 7 for oil sealing;
step eight, first: the BYS-II type double-chamber liquid sealing device is adopted to inject the isolation medium 8 into the closed cavity in the sealing tube seat 7, and the vacuum degree is less than 10 -9 Pa, the isolation medium 8 is an inert organic liquid;
step eight, two: firstly, sealing a 1.3mm medium injection hole 602 by using a phi 2 steel ball, and then sealing and welding the medium injection hole 602 filled with the isolation medium 8 by using energy storage welding;
thus, the packaging of the resonant pressure sensitive chip probe of the isolation packaging structure is completed;
step nine: electrically testing the resonance pressure sensitive chip probe of the packaged isolation packaging structure;
performing electrical test under constant normal pressure, and stabilizing the resonance pressure sensitive chip probe to be qualified in less than 3 seconds when the resonance pressure sensitive chip probe does not generate frequency hopping phenomenon and the frequency changes towards one direction;
step ten: performing pressure fatigue and aging tests on the resonance pressure sensitive chip probe of the packaged isolation packaging structure;
the resonance pressure sensitive chip probe is arranged on the clamp and is connected with the pneumatic fatigue machine or the hydraulic fatigue machine, the fatigue times are 5000/10000, and the temperature aging experiment is carried out in a high-low temperature test box, so that the internal stress of the resonance pressure sensitive chip probe is released together, and the output stability of the resonance pressure sensitive chip of the isolation packaging structure is improved;
step eleven: performing air tightness detection on the resonance pressure sensitive chip probe of the packaged isolation packaging structure;
connecting the resonance pressure sensitive chip probe with a pressure controller for air tightness detection, wherein the pressure change value is not more than +/-2 Pa, and the air tightness of the resonance pressure sensitive chip probe is qualified at the moment;
step twelve: and (3) performing laser marking and screening on the resonance pressure sensitive chip probe of the packaged isolation packaging structure, and transferring to the next production stage.
The working principle of the invention is as follows:
sealing the silicon resonance pressure sensitive chip 3 into the sealed tube seat 7 filled with the isolation medium 8, welding the lead electrode 3022 and the kovar alloy pin 4 through the electrode bonding lead 5, transmitting sensor signals, and ensuring the tightness of the whole sealed tube seat 7 by the kovar alloy pin 4; when the surface of the corrugated diaphragm 2 is subjected to recoverable deformation caused by pressure, the volume of the isolation medium 8 is changed, and the special probe medium transmission channel 6 is designed to transmit pressure change caused by the volume change to the silicon resonance pressure sensitive chip 3 to realize measurement.
Claims (8)
1. The utility model provides an isolation packaging structure's resonance pressure sensitive chip probe which characterized in that: it comprises a compression ring (1), a corrugated diaphragm (2), a silicon resonance pressure sensitive chip (3), kovar alloy pins (4), electrode bonding leads (5), a probe medium transmission channel (6), a sealing tube seat (7) and an isolation medium (8),
the upper end face of the sealing tube seat (7) is a corrugated membrane contact surface (701), a stepped groove is formed in the corrugated membrane contact surface (701), the upper stepped surface of the stepped groove is a lead hole surface (704), the lower stepped surface of the stepped groove is a chip bonding surface (702), a probe medium transmission channel (6) is formed in the chip bonding surface (702), a plurality of lead holes (703) are vertically formed in the lead hole surface (704), and an annular sealing groove (705) is formed in the middle upper portion of the outer cylindrical surface of the sealing tube seat (7);
the kovar alloy pins (4) are vertically arranged on lead holes (703) of the sealing tube seat (7) in a glass sintering mode, the silicon resonance pressure sensitive chip (3) is arranged on a chip bonding surface (702) of the sealing tube seat (7) in an adhesive mode, a gap is reserved between the silicon resonance pressure sensitive chip (3) and the side wall of the step groove, and the silicon resonance pressure sensitive chip (3) is connected with the kovar alloy pins (4) through electrode bonding leads (5); the corrugated diaphragm (2) is arranged on the contact surface (701) of the corrugated diaphragm, the compression ring (1) is pressed on the corrugated diaphragm (2), and the isolation medium (8) is filled in the airtight cavity formed among the gap, the probe medium transmission channel (6), the corrugated diaphragm (2) and the sealing tube seat (7).
2. The resonant pressure sensitive chip probe of claim 1, wherein: the silicon resonance pressure sensitive chip (3) comprises a chip upper cover (301), a resonance layer (302), a silicon-based substrate (3021) and a stress isolation layer (303), wherein the chip upper cover (301), the resonance layer (302), the silicon-based substrate (3021) and the stress isolation layer (303) are sequentially connected from top to bottom and are made into a whole, an inverted trapezoid pressure sensing groove is formed in the lower end face of the silicon-based substrate (3021), an absolute cavity is formed between the chip upper cover (301) and the silicon-based substrate (3021), and the resonance layer (302) is located in the absolute cavity.
3. The resonant pressure sensitive chip probe of claim 2, wherein: the middle part of the stress isolation layer (303) is provided with a pressure sensing through hole (3031).
4. A resonant pressure sensitive chip probe of an isolated package structure as recited in claim 3, wherein: the resonance layer (302) comprises four leading-out electrodes (3022), two driving electrodes (3023), a standby electrode (3024), two sensitive comb teeth electrodes (3025), two stable beams (3026), two transverse pull beams (3027), an anchor block (3028) and an electrode passage (3029),
two driving electrodes (3023) are arranged in parallel up and down, an extraction electrode (3022) is respectively arranged on the left side and the right side of each driving electrode (3023), a sensitive comb electrode (3025) is arranged on the opposite side of each driving electrode (3023), a stable beam (3026) is respectively arranged on the inner side of each sensitive comb electrode (3025), a transverse pulling beam (3027) is respectively arranged on the inner side of each stable beam (3026), an anchor block (3028) is arranged between each transverse pulling beam (3027), and the anchor blocks (3028) are connected with a spare electrode (3024) through an electrode passage (3029).
5. The resonant pressure sensitive chip probe of claim 4, wherein: the end of each transverse tension beam (3027) is of a Y-shaped beam structure.
6. The resonant pressure sensitive chip probe of claim 5, wherein: each stabilizing beam (3026) comprises two stabilizing units which are symmetrical left and right,
each stabilizing unit comprises a first connecting support beam (901), a first cable-stayed beam parallel support beam (901-1), a first cable-stayed beam vertical support beam (901-2), a first parallel support beam vertical beam (901-3), a first cable-stayed beam stabilizing beam (901-4) and a second cable-stayed beam stabilizing beam (901-5),
a trapezoid structure is formed among the first cable-stayed beam parallel support beam (901-1), the first cable-stayed beam stabilizing beam (901-4), the second cable-stayed beam stabilizing beam (901-5) and the sensitive comb tooth electrode (3025), the first cable-stayed beam vertical support beam (901-2) and the first parallel support beam vertical beam (901-3) are vertical to the first cable-stayed beam parallel support beam (901-1), right triangles are formed between the first cable-stayed beam vertical support beam (901-2) and the first parallel support beam vertical beam (901-3) and the first cable-stayed beam stabilizing beam (901-4) and the second cable-stayed beam stabilizing beam (901-5) as well as between the first cable-stayed beam parallel support beam (901-1),
one end of the first connecting support beam (901) coincides with an intersection point of the first cable-stayed beam vertical support beam (901-2) and the first cable-stayed beam parallel support beam (901-1), and the other end of the first connecting support beam (901) coincides with an intersection point of the first parallel support beam vertical beam (901-3) and the second cable-stayed beam stabilizing beam (901-5).
7. The resonant pressure sensitive chip probe of claim 6, wherein: the probe medium transmission channel (6) comprises a medium groove (601) and a medium injection hole (602),
the medium groove (601) is a linear deep groove structure, the medium groove (601) comprises a chip medium groove (6011), a first side wall medium pressure guiding groove (6012) and a second side wall medium pressure guiding groove (6013), the chip medium groove (6011) is horizontally arranged, the first side wall medium pressure guiding groove (6012) and the second side wall medium pressure guiding groove (6013) are vertically arranged, the first side wall medium pressure guiding groove (6012) and the second side wall medium pressure guiding groove (6013) are respectively connected with one end of the chip medium groove (6011) to form the medium groove (601), and the medium injection hole (602) is connected with the other end of the first side wall medium pressure guiding groove (6012).
8. A packaging method for a resonant pressure sensitive chip probe of an isolated packaging structure as recited in claim 7, wherein: it comprises the following steps:
step one: manufacturing and cleaning a sealing tube seat (7);
the glass slurry sinters the lead hole (703) and the upper and lower pins in the sealing tube seat (7) together to form a sealing pin structure, and the sealing tube seat (7) is made of stainless steel;
respectively clamping a silk cleaning sealing tube seat (7) adhered with acetone and absolute ethyl alcohol by using stainless steel tweezers with the heads coated with polytetrafluoroethylene, cleaning the sealing tube seat for more than 20s by using absolute ethyl alcohol, and drying the sealing tube seat in a drying oven; placing the silicon resonance pressure sensitive chip (3) into acetone and absolute ethyl alcohol in sequence, respectively carrying out ultrasonic cleaning on the sealing tube seat (7) and the silicon resonance pressure sensitive chip (3) for 15min, and placing the special fixture ceramic ring into the acetone and the absolute ethyl alcohol in sequence for ultrasonic cleaning for 15+/-3 min;
step two: gluing and bonding;
fixing a sealing tube seat (7) on a clamp, picking 730 glue by using a toothpick or using an automatic dispenser to uniformly dot 6 dots on the sealing tube seat (7) according to the appearance of a silicon resonance pressure sensitive chip (3), embedding the silicon resonance pressure sensitive chip (3) into the sealing tube seat, pressing the upper part of a chip upper cover (301) of the silicon resonance pressure sensitive chip (3) by using a ceramic rod, ensuring that an external pressure hole on the sealing tube seat (7) corresponds to a pressure sensing through hole (3031) of a stress isolation layer (303), continuously picking 730 glue by using the toothpick or using an automatic dispenser to dispense glue, protecting a kovar alloy pin (4) corresponding to a through hole of a ceramic ring of a special clamp, and taking out the ceramic ring after the glue is coated;
step three: curing the glue;
placing the sealing tube seat (7) bonded with the silicon resonance pressure sensitive chip (3) in the second step in a constant temperature and humidity environment for curing for 20-30 hours;
step four: pressure welding of the electrode bonding wire (5);
step four, first: fixing the sealing tube seat (7) on a fixture, and welding the electrode bonding wire (5) and the extraction electrode (3022) together at a position where the diameter of the tip of the chopper is 2.5 times that of the electrode bonding wire (5) on the surface of the extraction electrode (3022);
step four, two: welding the other end of the electrode bonding wire (5) on the kovar alloy pin (4) through a hot welding pen, wherein the length of the electrode bonding wire (5) is automatically formed when two points are pressed and welded;
and step four, three: carrying out a breaking force test on the electrode bonding lead (5) until the breaking force meets the design requirement;
step five: performing insulation test on the Kovar alloy pins (4) and the sealing tube seat (7);
an insulation resistance tester is adopted to test insulation resistance between each pin of the kovar alloy pins (4) and the sealing tube seat (7), and the resistance is larger than a design limit value;
step six: basic performance test of the silicon resonance pressure sensitive chip (3);
the water absorbing ball is adopted to blow the pressure guiding hole, the pressure change is less than hundreds of hertz, and meanwhile, the temperature frequency is not changed; at the moment, the silicon resonance pressure sensitive chip (3) meets the design requirement;
step seven: welding the compression ring (1) and the corrugated diaphragm (2) on the sealing tube seat (7);
fixing a sealing tube seat (7) on a clamp, placing a corrugated diaphragm (2) on a corrugated diaphragm contact surface (701), placing a compression ring (1) on the corrugated diaphragm (2), then welding by using argon arc or electron beam, and then performing penetration test; repeating the fifth step;
step eight: oiling the sealed cavity in the sealing tube seat (7) to carry out oil seal;
step eight, first: injecting an isolation medium (8) into a closed cavity in a sealing tube seat (7) by adopting a BYS-II type double-chamber liquid sealing device, wherein the vacuum degree is less than 10 -9 Pa, the isolating medium (8) is an inert organic liquid;
step eight, two: firstly sealing a medium injection hole (602) with the diameter of 1.3mm by using a phi 2 steel ball, and then sealing and welding the medium injection hole (602) filled with the isolation medium (8) by using energy storage welding;
thus, the packaging of the resonant pressure sensitive chip probe of the isolation packaging structure is completed;
step nine: electrically testing the resonance pressure sensitive chip probe of the packaged isolation packaging structure;
performing electrical test under constant normal pressure, and stabilizing the resonance pressure sensitive chip probe to be qualified in less than 3 seconds when the resonance pressure sensitive chip probe does not generate frequency hopping phenomenon and the frequency changes towards one direction;
step ten: performing pressure fatigue and aging tests on the resonance pressure sensitive chip probe of the packaged isolation packaging structure;
the resonance pressure sensitive chip probe is arranged on the clamp and is connected with the pneumatic fatigue machine or the hydraulic fatigue machine, the fatigue times are 5000/10000, and then the resonance pressure sensitive chip probe is placed in a high-low temperature test box for temperature aging experiments, so that the internal stress of the resonance pressure sensitive chip probe is released together, and the output stability of the resonance pressure sensitive chip of the isolation packaging structure is improved;
step eleven: performing air tightness detection on the resonance pressure sensitive chip probe of the packaged isolation packaging structure;
connecting the resonance pressure sensitive chip probe with a pressure controller for air tightness detection, wherein the pressure change value is not more than +/-2 Pa, and the air tightness of the resonance pressure sensitive chip probe is qualified at the moment;
step twelve: and (3) performing laser marking and screening on the resonance pressure sensitive chip probe of the packaged isolation packaging structure, and transferring to the next production stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110983367.XA CN113697761B (en) | 2021-08-25 | 2021-08-25 | Resonant pressure sensitive chip probe of isolation packaging structure and packaging method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110983367.XA CN113697761B (en) | 2021-08-25 | 2021-08-25 | Resonant pressure sensitive chip probe of isolation packaging structure and packaging method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113697761A CN113697761A (en) | 2021-11-26 |
| CN113697761B true CN113697761B (en) | 2023-07-07 |
Family
ID=78654802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110983367.XA Active CN113697761B (en) | 2021-08-25 | 2021-08-25 | Resonant pressure sensitive chip probe of isolation packaging structure and packaging method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113697761B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110745772B (en) * | 2019-10-21 | 2023-10-20 | 重庆大学 | MEMS stress isolation packaging structure and manufacturing method thereof |
| CN116878703B (en) * | 2023-09-06 | 2023-12-19 | 龙微科技无锡有限公司 | MSG pressure sensor and assembly method |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5090254A (en) * | 1990-04-11 | 1992-02-25 | Wisconsin Alumni Research Foundation | Polysilicon resonating beam transducers |
| JP3556166B2 (en) * | 2000-12-01 | 2004-08-18 | 長野計器株式会社 | Pressure sensor |
| JP2011179850A (en) * | 2010-02-26 | 2011-09-15 | Yokogawa Electric Corp | Vibration pressure sensor |
| CN102079502B (en) * | 2010-12-03 | 2014-08-13 | 华东光电集成器件研究所 | MEMS (micro electro mechanical system) device and wafer-level vacuum packaging method thereof |
| CN102322893B (en) * | 2011-05-30 | 2013-02-13 | 中国电子科技集团公司第四十九研究所 | Oil-filled temperature and pressure combined sensor |
| CN102519658B (en) * | 2011-12-31 | 2014-11-05 | 天水华天传感器有限公司 | Silicon piezoresistive pressure sensor core body and production method thereof |
| CN102928131B (en) * | 2012-10-09 | 2014-11-05 | 西安交通大学 | Quartz resonance beam type micro-pressure sensor chip |
| CN103335751B (en) * | 2013-06-05 | 2015-11-11 | 厦门大学 | A kind of double-harmonic oscillator silicon micropressure sensor and preparation method thereof |
| CN109883603B (en) * | 2019-03-13 | 2020-11-06 | 中国电子科技集团公司第四十九研究所 | Silicon micro-resonance type pressure sensitive chip resonator based on SOI |
| CN211205616U (en) * | 2020-02-24 | 2020-08-07 | 南京新力感电子科技有限公司 | MEMS pressure sensor device |
-
2021
- 2021-08-25 CN CN202110983367.XA patent/CN113697761B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN113697761A (en) | 2021-11-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113697761B (en) | Resonant pressure sensitive chip probe of isolation packaging structure and packaging method thereof | |
| CN113697760B (en) | Isolation packaging self-compensating resonance pressure sensitive chip probe and packaging method thereof | |
| CN113697762B (en) | Differential pressure resonance pressure sensitive chip probe with isolation packaging structure and packaging method | |
| CN100561156C (en) | The SOI complete silicon structure silicone-oil-filling high-temperature-resistance pressure sensor | |
| CN202382900U (en) | Absolute pressure packaging structure for strain pressure transducer and strain pressure transducer | |
| CN113816330B (en) | Resonance temperature sensitive chip probe of vacuum packaging structure and packaging method thereof | |
| CN104101456A (en) | Pressure sensor dielectric isolation packaging structure | |
| CN111076848A (en) | Pressure measuring device and method | |
| CN113697764B (en) | Resonance temperature sensitive chip probe of isolation packaging structure and packaging method thereof | |
| CN113816329B (en) | Resonance pressure sensitive chip probe of vacuum packaging structure and packaging method thereof | |
| CN203191140U (en) | Dielectric isolation packaging structure for pressure sensor | |
| CN113697763B (en) | Vacuum packaging self-compensating resonance pressure sensitive chip probe and packaging method thereof | |
| CN113697765B (en) | Vacuum packaging structure differential pressure resonance pressure sensitive chip probe and packaging method | |
| CN201852665U (en) | Gas pressure sensor | |
| CN101493367A (en) | Miniature dynamical stress sensor based on MEMS technology and method of producing same | |
| CN102661822A (en) | Silicon strain foil metallic packaging sensor | |
| CN114354033A (en) | Force sensor and manufacturing method thereof | |
| CN109490263A (en) | A kind of crack propagation piece and its application method for the measurement of steel box-girder crackle | |
| CN104964784A (en) | Core body of high-temperature and high-pressure sensor | |
| CN107014691A (en) | A kind of chip bonding strength meter and method | |
| CN209927385U (en) | Valve rod packing testing arrangement | |
| CN203364882U (en) | Temperature and pressure integrated sensitive assembly | |
| CN203858052U (en) | Pressure sensitive component adopting ceramic metal tube shell axial sintering | |
| CN115196582A (en) | High-pressure-resistant MEMS pressure sensor packaging structure and packaging method | |
| CN113313993B (en) | Cable lead sealing experiment detection device and using method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |