CN113652745A - Cleaning reminding method and device for epitaxial equipment, electronic equipment and storage medium - Google Patents

Cleaning reminding method and device for epitaxial equipment, electronic equipment and storage medium Download PDF

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Publication number
CN113652745A
CN113652745A CN202110942705.5A CN202110942705A CN113652745A CN 113652745 A CN113652745 A CN 113652745A CN 202110942705 A CN202110942705 A CN 202110942705A CN 113652745 A CN113652745 A CN 113652745A
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epitaxial
particle diameter
equipment
cleaning
reminding
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戴科峰
唐卓睿
盛飞龙
王鑫
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Ji Hua Laboratory
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Ji Hua Laboratory
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

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  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention relates to the technical field of epitaxial growth, and particularly discloses a method and a device for reminding cleaning of epitaxial equipment, electronic equipment and a storage medium, wherein the method comprises the following steps: acquiring particle diameter information of reaction tail gas generated by epitaxial equipment; sending cleaning reminding information according to the comparison result of the particle diameter information and a preset particle diameter threshold; according to the method, the particle diameter information in the reaction tail gas generated in the operation process of the epitaxial equipment is obtained to indirectly obtain the growth condition of impurities in the reaction chamber of the epitaxial equipment, whether the reaction chamber of the epitaxial equipment needs to be cleaned can be determined based on the comparison result of the particle diameter information and the particle diameter threshold, a user can be timely reminded of cleaning the epitaxial equipment, excessive inferior products are avoided, the intelligent cleaning reminding function is realized, and the optimal maintenance time of the epitaxial equipment is determined.

Description

Cleaning reminding method and device for epitaxial equipment, electronic equipment and storage medium
Technical Field
The application relates to the technical field of epitaxial growth, in particular to a method and a device for cleaning and reminding epitaxial equipment, electronic equipment and a storage medium.
Background
The pollution problem of the epitaxial equipment is a main factor influencing the epitaxial efficiency, so that the epitaxial equipment needs to be shut down for cleaning and maintenance after running for a period of time, otherwise, a polluted reaction chamber can influence the epitaxial growth quality.
The existing epitaxial equipment generally needs to be cleaned and maintained after being continuously used for 1-2 days, the current standard for mainly judging whether the equipment needs to be maintained is growth thickness, namely, the equipment is judged by utilizing the yield of epitaxial wafers, and the main reason for adopting the judgment mode is that the running state in the equipment is judged because no good standard exists in the prior art, and only one growth thickness standard can be set according to an empirical value for judgment; however, this person lacks a direct correlation with the conditions inside the chamber for a given growth thickness standard and often fails to provide an accurate indicator to the user to clean the epitaxial equipment, resulting in product defects.
In view of the above problems, no effective technical solution exists at present.
Disclosure of Invention
An object of the embodiments of the present application is to provide a method and an apparatus for reminding cleaning of an epitaxial device, an electronic device, and a storage medium, which can remind a user of cleaning the epitaxial device in time, and implement an intelligent cleaning reminding function.
In a first aspect, an embodiment of the present application provides a method for reminding cleaning of an epitaxial apparatus, which is used for reminding that a reaction chamber of the epitaxial apparatus needs to be cleaned, and the method includes the following steps: acquiring particle diameter information of reaction tail gas generated by epitaxial equipment;
and sending cleaning reminding information according to the comparison result of the particle diameter information and a preset particle diameter threshold value.
The method for reminding cleaning of the epitaxial equipment comprises the steps of obtaining particle diameter information in reaction tail gas generated in the running process of the epitaxial equipment, indirectly obtaining the growth condition of impurities in a reaction chamber of the epitaxial equipment, namely indirectly obtaining the size data of falling objects in the reaction chamber, determining whether the reaction chamber of the epitaxial equipment needs to be cleaned or not based on the comparison result of the particle diameter information and a particle diameter threshold value, timely reminding a user of cleaning the epitaxial equipment, avoiding generation of excessive inferior products, realizing an intelligent cleaning reminding function, and determining the optimal maintenance time of the epitaxial equipment.
The epitaxial equipment cleaning reminding method comprises the following steps of:
acquiring the diameter of the largest particulate matter in the particulate matter diameter information;
comparing the size between the diameter of the largest particulate matter and a preset particulate matter diameter threshold value;
and if the diameter of the largest particulate matter is larger than or equal to the particulate matter diameter threshold value, sending out cleaning reminding information.
The cleaning reminding method for the epitaxial equipment is characterized in that the particle diameter threshold is 50-100 mu m.
The cleaning reminding method for the epitaxial equipment comprises the following steps: and if the cleaning reminding information is sent, the substrate in epitaxial growth exists in the epitaxial equipment, and the operation of the epitaxial equipment is suspended after the substrate finishes epitaxial growth.
The cleaning reminding method for the epitaxial equipment comprises the following steps of: and starting to acquire the particle diameter information of the reaction tail gas generated by the epitaxial equipment after the epitaxial equipment is started or delaying to acquire the particle diameter information of the reaction tail gas generated by the epitaxial equipment after the epitaxial equipment is started.
The cleaning reminding method for the epitaxial equipment comprises the following steps of: and continuously or discontinuously acquiring the particle diameter information of the reaction tail gas generated by the epitaxial equipment.
The cleaning reminding method for the epitaxial equipment is characterized in that the particle diameter information is obtained discontinuously, and the interval of the discontinuous obtaining of the particle diameter information is a fixed value or is gradually shortened along with the running time of the epitaxial equipment.
In a second aspect, an embodiment of the present application further provides an epitaxial device cleaning reminding device, which is used for reminding a reaction chamber of an epitaxial device that cleaning needs to be performed, and the device includes: the first acquisition module is used for acquiring the particle diameter information of reaction tail gas generated by the epitaxial equipment;
and the reminding module is used for sending out cleaning reminding information according to the comparison result of the particle diameter information and a preset particle diameter threshold value.
The utility model provides a method is reminded in epitaxial equipment washing of embodiment, particulate matter diameter threshold has been preset, utilize first acquisition module to acquire the particulate matter diameter information in the reaction tail gas that epitaxial equipment operation in-process produced, with the growth condition of indirect acquisition epitaxial equipment reaction chamber impurity, the thing size data that drops in the reaction chamber has been obtained promptly indirectly, then can confirm whether the reaction chamber of epitaxial equipment needs to be washd based on particulate matter diameter information and the comparative result of particulate matter diameter threshold through reminding the module, and in time remind the user to wash epitaxial equipment, avoid producing too much inferior product, realize intelligent washing and remind the function, with the optimal maintenance time who confirms epitaxial equipment.
In a third aspect, an embodiment of the present application further provides an electronic device, including a processor and a memory, where the memory stores computer-readable instructions, and when the computer-readable instructions are executed by the processor, the steps in the method as provided in the first aspect are executed.
In a fourth aspect, embodiments of the present application further provide a storage medium, on which a computer program is stored, where the computer program runs the steps in the method provided in the first aspect when executed by a processor.
Therefore, the embodiment of the application provides a method and a device for reminding cleaning of epitaxial equipment, electronic equipment and a storage medium, wherein the method is used for indirectly knowing the growth condition of impurities in a reaction chamber of the epitaxial equipment by acquiring the diameter information of particles in reaction tail gas generated in the operation process of the epitaxial equipment, and determining whether the reaction chamber of the epitaxial equipment needs to be cleaned or not based on the comparison result of the diameter information of the particles and the diameter threshold of the particles, so that a user can be timely reminded of cleaning the epitaxial equipment, excessive inferior products are avoided, the intelligent cleaning reminding function is realized, and the optimal maintenance time of the epitaxial equipment is determined.
Drawings
Fig. 1 is a flowchart of a method for reminding cleaning of an epitaxial device according to an embodiment of the present application.
Fig. 2 is a schematic structural diagram of an epitaxial device cleaning reminding device according to an embodiment of the present application.
Fig. 3 is a schematic structural diagram of an epitaxial apparatus according to embodiment 1 provided in this application.
Fig. 4 is a schematic structural diagram of an electronic device according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present application without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.
In a first aspect, please refer to fig. 1, fig. 1 is a method for reminding cleaning of a reaction chamber of an epitaxial apparatus, in some embodiments of the present application, where the method includes the following steps: s1, obtaining the particle diameter information of the reaction tail gas generated by the epitaxial equipment;
and S2, sending out cleaning reminding information according to the comparison result of the particle diameter information and the preset particle diameter threshold value.
The cleaning reminding method for the epitaxial equipment is suitable for CVD (chemical vapor deposition) epitaxial equipment, and is particularly suitable for CVD epitaxial equipment of silicon carbide.
The silicon carbide CVD epitaxial equipment is used for a long time, impurity silicon carbide inevitably grows in a reaction chamber of the silicon carbide CVD epitaxial equipment, when the attachment quantity of the impurity silicon carbide is excessive, the silicon carbide product growing on a substrate can generate a falling-object defect (down-fall), and the falling-object defect is caused by the falling of silicon carbide particles attached in the reaction chamber.
Specifically, the number and size of the falling objects affect the number and size of the defects of the falling objects, and the silicon carbide particles attached to the reaction chamber have enough size to generate the falling objects, wherein one part of the falling objects can cause the defects of the falling objects, and the other part of the falling objects can be separated from the reaction chamber under the flowing action of the reaction tail gas and flows to a tail gas treatment device of the epitaxial equipment along with the reaction tail gas to carry out tail gas treatment; therefore, the particle size in the reaction tail gas can reflect the generation condition of the falling object in the reaction chamber, and the epitaxial equipment cleaning reminding method provided by the embodiment of the application judges the size of the falling object in the reaction chamber according to the particle size in the reaction tail gas so as to determine whether the reaction chamber of the epitaxial equipment needs to be cleaned.
Specifically, a particle diameter threshold value is set according to the damage condition of the size of a falling object, the particle diameter threshold value is a diameter value, if the diameter of the falling object is larger than or equal to the particle diameter threshold value, obvious defect of the falling object can be generated on the silicon carbide epitaxial wafer, and the defect that the impurity in a reaction chamber of the epitaxial equipment is excessive at the moment and the epitaxial equipment needs to be cleaned; in other embodiments, the particle diameter threshold can also be a threshold value for the concentration value of a diameter particle.
More specifically, if directly set up the particle detector in the reacting chamber and can influence the temperature overall arrangement in the reacting chamber and influence carborundum epitaxial growth quality, and be the high temperature state in the reacting chamber, the particle detector can't directly use, so can't directly detect out the thing size that drops in the reacting chamber, consequently, this application embodiment carries out the detection that the thing size dropped through obtaining the particulate matter diameter information in the reaction tail gas by the reacting chamber exhaust.
Specifically, the cleaning reminding information is a message for reminding a user of cleaning the reaction chamber of the epitaxial device, and a prompt can be sent by an operation end of the epitaxial device so that the user can know that the epitaxial device needs to be cleaned.
The method for reminding cleaning of the epitaxial equipment comprises the steps of obtaining particle diameter information in reaction tail gas generated in the running process of the epitaxial equipment, indirectly obtaining the growth condition of impurities in a reaction chamber of the epitaxial equipment, namely indirectly obtaining the size data of falling objects in the reaction chamber, determining whether the reaction chamber of the epitaxial equipment needs to be cleaned or not based on the comparison result of the particle diameter information and a particle diameter threshold value, timely reminding a user of cleaning the epitaxial equipment, avoiding generation of excessive inferior products, realizing an intelligent cleaning reminding function, and determining the optimal maintenance time of the epitaxial equipment.
Specifically, the particle diameter information is particle diameter data in the reaction exhaust gas, and may be the diameter of the largest particle in a unit time or the concentration of particles exceeding a certain diameter in a time point, and accordingly, step S2 has two comparison manners.
In some preferred embodiments, the particle diameter information is a diameter of the largest particle in a unit time, and the particle diameter threshold is a diameter value, then the step S3 includes the steps of:
s21, acquiring the diameter of the largest particulate matter in the particulate matter diameter information;
s22, comparing the diameter of the largest particulate matter with the preset particulate matter diameter threshold value;
and S23, if the diameter of the largest particulate matter is larger than or equal to the particulate matter diameter threshold value, sending out cleaning reminding information.
Specifically, among the above-mentioned comparative mode, carry out threshold value diameter based on the diameter of the biggest particulate matter in the reaction tail gas and compare, can acquire the size condition of the biggest junk in the reaction chamber accurately, and then can learn the condition of the interior actual operating environment of epitaxial equipment reaction chamber more in time, in time send and wash the warning.
In some preferred embodiments, the particle diameter information is a concentration of particles exceeding a certain diameter at a time point, and the particle diameter threshold is a concentration value threshold of a set diameter particle, then step S2 includes the steps of:
s21', obtaining a set diameter value in the particulate matter diameter threshold value;
s22', obtaining the concentration of the particles exceeding the diameter value in the reaction tail gas as particle diameter information;
s23', comparing the particle diameter information with the concentration value of the preset particle diameter threshold value;
s24', if the concentration value of the particle diameter information is larger than or equal to the concentration value of the particle diameter threshold value, sending out cleaning reminding information.
Specifically, among the above-mentioned comparative mode, surpass a diameter particulate matter concentration and carry out threshold value concentration comparison based on among the reaction tail gas, can acquire the concentration condition that the diameter surpassed the falling object of diameter value among the particulate matter diameter threshold value in the reaction chamber accurately, and then can learn the condition of the interior actual operating environment of epitaxial equipment reaction chamber more in time, in time send and wash the warning.
More specifically, the first comparison mode can more accurately acquire the falling condition of the falling object with a specific size, and is applied to comparison in the growth of epitaxial products with relatively high quality requirements, but misjudgment is sometimes caused by agglomeration of particulate matters, and the second comparison mode can acquire the whole falling condition of the falling object, is applied to comparison in the growth of epitaxial products with relatively high yield requirements and relatively low quality requirements, but sometimes generates some overlarge falling objects but the concentration does not reach the cleaning reminding condition; the two comparison modes can be selected for use based on actual use requirements; in the present embodiment, the first comparison method is preferably employed.
In some preferred embodiments, the threshold particle diameter is in the range of 50 to 100 μm.
Specifically, the particle diameter threshold is set according to the size of the falling objects corresponding to a large number of falling object defects caused during the production of the epitaxial equipment, and in the existing epitaxial equipment, the falling object length corresponding to the common falling object defects is generally between 50 and 100 μm, so the particle diameter threshold is set to be 50 to 100 μm.
In some preferred embodiments, the method further comprises the steps of: and S4, if the cleaning reminding information is sent, the epitaxial device is provided with a substrate which is in epitaxial growth, and the operation of the epitaxial device is stopped after the substrate finishes the epitaxial growth.
Specifically, when the cleaning reminding information is sent, it is indicated that an overlarge drop exists in a reaction chamber of the epitaxial device, but the drop does not necessarily damage an epitaxial wafer which is being epitaxially grown at present, and a substrate of the epitaxial wafer may also be in a state of ending epitaxial growth, so that in the embodiment of the application, after the substrate finishes epitaxial growth to form an epitaxial wafer, operation of the epitaxial device is suspended, operation of the device is suspended under the condition that epitaxial wafers processed by epitaxial growth are wasted as far as possible, and the problem that workers do not stop in time under the condition that the epitaxial device needs to be cleaned, so that epitaxial growth is performed on a new substrate to produce an inferior product with the defect of the drop is solved.
In some preferred embodiments, the step of obtaining the particle diameter information of the reaction off-gas generated by the epitaxy equipment comprises: and starting to acquire the particle diameter information of the reaction tail gas generated by the epitaxial equipment after the epitaxial equipment is started or delaying to acquire the particle diameter information of the reaction tail gas generated by the epitaxial equipment after the epitaxial equipment is started.
Specifically, after the epitaxial apparatus is cleaned, there is generally no excessively large drop in a short period, and therefore, the step of obtaining the particle diameter information of the reaction exhaust gas generated by the epitaxial apparatus may be set to be started with a delay, that is, after the epitaxial apparatus is operated for a period of time, the step of obtaining the particle diameter information of the reaction exhaust gas is started to serve as a basis for sending out the cleaning reminding information, where the delay time may be set according to a time point at which the defect of the drop occurs earliest in the actual use experience, and if the time point at which the defect of the drop occurs earliest in the process of starting operation of the epitaxial apparatus after cleaning is 36 hours, the delay time may be set to be less than or equal to 36 hours, for example, 24 hours; some epitaxial devices are operated for a plurality of times in a short period and are not cleaned, the condition in the reaction chamber is difficult to predict, and the acquisition of the particle diameter information can be directly started when the epitaxial devices are started.
More specifically, the particle diameter information is acquired after the extension equipment is started in a delayed mode, and the energy consumption of the equipment can be effectively saved.
In some preferred embodiments, the step of obtaining the particle diameter information of the reaction off-gas generated by the epitaxy equipment comprises: and continuously or discontinuously acquiring the particle diameter information of the reaction tail gas generated by the epitaxial equipment.
Particularly, the size condition of the falling objects in the reaction chamber in the epitaxial equipment can be acquired more timely and accurately by continuously acquiring the diameter information of the particles, and the cleaning reminding information can be sent more accurately and timely.
Specifically, epitaxial growth belongs to a process for a long time, and energy consumption can be saved under the condition that the cleaning reminding information is ensured to be sent out timely by discontinuously acquiring the particle diameter information.
In some preferred embodiments, the particle diameter information is preferably obtained intermittently, and the interval between the intermittent acquisitions of the particle diameter information is constant or gradually shortened with the operating time of the epitaxial apparatus.
Specifically, the interval of intermittent acquisition is preferably gradually shortened along with the running time of the epitaxial equipment; along with the increase of the running time of the epitaxial equipment, the thickness of impurities in the reaction chamber can be gradually increased, and the probability of generating large-scale falling objects can be increased, so that the interval for discontinuously acquiring the particle diameter information is set to be gradually shortened along with the running time of the epitaxial equipment, and the reminding information can be ensured to be sent more timely under the condition of saving energy consumption.
In some preferred embodiments, a particle diameter change diagram with respect to time can be further drawn based on the acquired particle diameter information, and the change diagram reflects the change of the size of a falling object in the reaction chamber with respect to time, namely indirectly reflects the growing thickness of an impurity layer in the reaction chamber, so that another judgment means is provided for the cleaning reminding of the epitaxial equipment.
In a second aspect, please refer to fig. 2, fig. 2 is a device for reminding cleaning of a reaction chamber of an epitaxial apparatus, according to some embodiments of the present application, where the device includes: the first acquisition module 101 is used for acquiring particle diameter information of reaction tail gas generated by epitaxial equipment;
and the reminding module 102 is used for sending out cleaning reminding information according to the comparison result of the particle diameter information and a preset particle diameter threshold value.
The utility model provides an epitaxial equipment washs reminding device, particulate matter diameter threshold value has been preset, utilize first acquisition module 101 to acquire the particulate matter diameter information in the reaction tail gas that epitaxial equipment operation in-process produced, with indirectly learn the growth condition of impurity in the epitaxial equipment reaction chamber, the thing size data that drops in the reaction chamber has been indirectly obtained promptly, then can confirm whether the reaction chamber of epitaxial equipment needs to wash through reminding module 102 based on particulate matter diameter information and particulate matter diameter threshold value's comparison result, and in time remind the user to wash epitaxial equipment, avoid producing too much inferior product, realize intelligent washing and remind the function, with the optimal maintenance time who confirms epitaxial equipment.
Example 1
As shown in fig. 3, the horizontal CVD epitaxial apparatus for silicon carbide comprises a reaction chamber 201 for silicon carbide epitaxial growth, and an industrial personal computer 204 for controlling the operation conditions in the reaction chamber 201 to perform silicon carbide epitaxial growth on a substrate.
A particle detector 202 is disposed on an exhaust pipeline of the reaction chamber 201, and the particle detector 202 is electrically connected to the industrial personal computer 204 through a PLC control unit 203.
When the epitaxial device is used specifically, high temperature is generated in the reaction chamber 201, the reaction gas is conveyed into the reaction chamber 201 through the gas conveying device to react to realize epitaxial growth, and tail gas generated after reaction is conveyed into the tail gas treatment device through the exhaust pipeline to be treated.
Wherein, the first module 101 and the warning module 102 of acquireing among the above-mentioned epitaxial equipment washs and reminds all to be equipped with in the PLC the control unit 203, consequently the PLC the control unit 203 can acquire particulate matter diameter information from particle detector 202 to remind module 102 according to the particulate matter diameter information and the comparative result of the particulate matter diameter threshold value of predetermineeing through it, send towards industrial computer 204 and wash and remind information.
The user can input a corresponding particle diameter threshold value according to the type and the characteristics of an epitaxial growth object in the industrial personal computer 204 to enable the PLC control unit 203 to set the particle diameter threshold value, because the epitaxial equipment is used for silicon carbide reaction, the particle diameter threshold value is set to be 100 mu m, the PLC control unit 203 controls the particle detector 202 to start, the particle detector 202 continuously monitors the particle diameter information of reaction tail gas in an exhaust pipeline and reports the particle diameter information obtained by monitoring to the PLC control unit 203 in real time, the PLC control unit 203 continuously compares the maximum particle diameter data in the particle diameter information with the particle diameter threshold value in real time, when the particle diameter information has the particle diameter data larger than or equal to 100 mu m, the PLC control unit 203 generates and sends cleaning reminding information to the industrial personal computer 204, and the industrial personal computer 204 reminds the user to clean the reaction chamber 201, in addition, after the epitaxial growth of the substrate which is still undergoing epitaxial growth is completed, the industrial personal computer 204 controls the epitaxial equipment to pause, so that the user can clean the reaction chamber 201 conveniently, and the reaction chamber 201 is prevented from continuously producing inferior products.
Example 2
This example employed a silicon carbide horizontal CVD epitaxial apparatus consistent with example 1.
The user can input a corresponding particle diameter threshold value according to the type and the characteristics of an epitaxial growth object in the industrial personal computer 204 to enable the PLC control unit 203 to set the particle diameter threshold value, because the epitaxial equipment is used for silicon carbide reaction, the particle diameter threshold value is set to be 50 mu m, the PLC control unit 203 controls the particle detector 202 to start, the particle detector 202 discontinuously monitors the particle diameter information of reaction tail gas in an exhaust pipeline, the monitoring frequency is once every 5 minutes, the particle diameter information obtained by monitoring is reported to the PLC control unit 203 in real time, the PLC control unit 203 compares the maximum particle diameter data in the particle diameter information with the particle diameter threshold value in real time, when the particle diameter data is larger than or equal to 50 mu m, the PLC control unit 203 generates and sends cleaning reminding information to the industrial personal computer 204, reminding the user to carry out the cleaning of reaction chamber 201 by industrial computer 204, in addition, waiting that the substrate that still is carrying out epitaxial growth at present finishes epitaxial growth after, industrial computer 204 control epitaxial equipment halts the operation to the user carries out the cleaning of reaction chamber 201, avoids reaction chamber 201 to continue to produce inferior product.
Example 3
This example employed a silicon carbide horizontal CVD epitaxial apparatus consistent with example 1.
The user can input a corresponding particle diameter threshold value according to the type and the characteristics of an epitaxial growth object in the industrial personal computer 204 to set the particle diameter threshold value in the PLC control unit 203, because the epitaxial equipment is used for silicon carbide reaction, the particle diameter threshold value is set to be 80 mu m, the PLC control unit 203 controls the particle detector 202 to start, the particle detector 202 discontinuously monitors the particle diameter information of reaction tail gas in an exhaust pipeline, the monitoring frequency is iteratively reduced according to the use duration of the epitaxial equipment, for example, the monitoring frequency in the first day of the operation of the epitaxial equipment is once 10 minutes, the monitoring frequency in the second day of the operation of the epitaxial equipment is once 5 minutes, the detection frequency in the third day of the operation of the epitaxial equipment is once 2.5 minutes, the particle diameter information is discontinuously monitored in the same way, and the particle diameter information obtained by monitoring is reported to the PLC control unit 203 in real time, the PLC control unit 203 compares the largest particle diameter data in the particle diameter information with the particle diameter threshold value in real time, when the particle diameter data is larger than or equal to 80 mu m, the PLC control unit 203 generates and sends cleaning reminding information to the industrial personal computer 204, the industrial personal computer 204 reminds a user to clean the reaction chamber 201, in addition, after the epitaxial growth of the substrate which is still subjected to epitaxial growth at present is completed, the industrial personal computer 204 controls the epitaxial equipment to pause, so that the user can clean the reaction chamber 201, and the reaction chamber 201 is prevented from continuously producing inferior products.
In a third aspect, referring to fig. 4, fig. 4 is a schematic structural diagram of an electronic device according to an embodiment of the present application, where the present application provides an electronic device 3, including: the processor 301 and the memory 302, the processor 301 and the memory 302 being interconnected and communicating with each other via a communication bus 303 and/or other form of connection mechanism (not shown), the memory 302 storing a computer program executable by the processor 301, the processor 301 executing the computer program when the computing device is running to perform the method of any of the alternative implementations of the embodiments described above.
Specifically, the electronic device 3 may be a PLC control unit in embodiment 1.
In a fourth aspect, the present application provides a storage medium, and when being executed by a processor, the computer program performs the method in any optional implementation manner of the foregoing embodiments. The storage medium may be implemented by any type of volatile or nonvolatile storage device or combination thereof, such as a Static Random Access Memory (SRAM), an Electrically Erasable Programmable Read-Only Memory (EEPROM), an Erasable Programmable Read-Only Memory (EPROM), a Programmable Read-Only Memory (PROM), a Read-Only Memory (ROM), a magnetic Memory, a flash Memory, a magnetic disk, or an optical disk.
In summary, the embodiment of the application provides a method and a device for reminding cleaning of epitaxial equipment, electronic equipment and a storage medium, wherein the method indirectly learns the growth condition of impurities in a reaction chamber of the epitaxial equipment by acquiring particle diameter information in reaction tail gas generated in the operation process of the epitaxial equipment, and whether the reaction chamber of the epitaxial equipment needs to be cleaned can be determined based on a comparison result of the particle diameter information and a particle diameter threshold value, so that a user can be timely reminded of cleaning the epitaxial equipment, excessive inferior products are avoided, an intelligent cleaning reminding function is realized, and the optimal maintenance time of the epitaxial equipment is determined.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in other ways. The above-described embodiments of the apparatus are merely illustrative, and for example, the division of the units is only one logical division, and there may be other divisions when actually implemented, and for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection of devices or units through some communication interfaces, and may be in an electrical, mechanical or other form.
In addition, units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
Furthermore, the functional modules in the embodiments of the present application may be integrated together to form an independent part, or each module may exist separately, or two or more modules may be integrated to form an independent part.
In this document, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.
The above description is only an example of the present application and is not intended to limit the scope of the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims (10)

1. An epitaxial equipment cleaning reminding method is used for reminding a reaction chamber of epitaxial equipment of needing cleaning, and is characterized by comprising the following steps:
acquiring particle diameter information of reaction tail gas generated by epitaxial equipment;
and sending cleaning reminding information according to the comparison result of the particle diameter information and a preset particle diameter threshold value.
2. The epitaxial device cleaning and reminding method of claim 1, wherein the step of sending out the cleaning and reminding message according to the comparison result of the particle diameter message and the preset particle diameter threshold value comprises the following steps:
acquiring the diameter of the largest particulate matter in the particulate matter diameter information;
comparing the size between the diameter of the largest particulate matter and a preset particulate matter diameter threshold value;
and if the diameter of the largest particulate matter is larger than or equal to the particulate matter diameter threshold value, sending out cleaning reminding information.
3. An epitaxial device cleaning and wake-up method according to claim 1, characterized in that the threshold particle diameter is 50-100 μm.
4. An epitaxial device cleaning and wake-up method according to claim 1, characterized in that the method further comprises the steps of: and if the cleaning reminding information is sent, the substrate in epitaxial growth exists in the epitaxial equipment, and the operation of the epitaxial equipment is suspended after the substrate finishes epitaxial growth.
5. The method for cleaning and reminding epitaxial equipment according to claim 1, wherein the step of acquiring the particle diameter information of the reaction tail gas generated by the epitaxial equipment comprises the following steps: and starting to acquire the particle diameter information of the reaction tail gas generated by the epitaxial equipment after the epitaxial equipment is started or delaying to acquire the particle diameter information of the reaction tail gas generated by the epitaxial equipment after the epitaxial equipment is started.
6. The method for cleaning and reminding epitaxial equipment according to claim 1, wherein the step of acquiring the particle diameter information of the reaction tail gas generated by the epitaxial equipment comprises the following steps: and continuously or discontinuously acquiring the particle diameter information of the reaction tail gas generated by the epitaxial equipment.
7. An epitaxial device cleaning and reminding method according to claim 6, wherein the particle diameter information is obtained intermittently, and the interval of intermittent obtaining of the particle diameter information is constant or gradually shortened along with the running time of the epitaxial device.
8. The utility model provides an epitaxial equipment washs reminding device for the reaction chamber of suggestion epitaxial equipment needs to wash, a serial communication port, the device includes:
the first acquisition module is used for acquiring the particle diameter information of reaction tail gas generated by the epitaxial equipment;
and the reminding module is used for sending out cleaning reminding information according to the comparison result of the particle diameter information and a preset particle diameter threshold value.
9. An electronic device comprising a processor and a memory, said memory storing computer readable instructions which, when executed by said processor, perform the steps of the method of any of claims 1-7.
10. A storage medium having a computer program stored thereon, wherein the computer program, when executed by a processor, performs the steps of the method according to any one of claims 1-7.
CN202110942705.5A 2021-08-17 2021-08-17 Cleaning reminding method and device for epitaxial equipment, electronic equipment and storage medium Pending CN113652745A (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030147075A1 (en) * 1999-06-15 2003-08-07 Hayashi Otsuki Particle-measuring system and particle-measuring method
US20060107973A1 (en) * 2004-10-12 2006-05-25 Samuel Leung Endpoint detector and particle monitor
US20090299652A1 (en) * 2008-05-30 2009-12-03 Tokyo Electron Limited Method of presuming interior situation of process chamber and storage medium
CN107368232A (en) * 2017-06-29 2017-11-21 联想(北京)有限公司 A kind of display control method, electronic equipment and computer-readable recording medium

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030147075A1 (en) * 1999-06-15 2003-08-07 Hayashi Otsuki Particle-measuring system and particle-measuring method
US20060107973A1 (en) * 2004-10-12 2006-05-25 Samuel Leung Endpoint detector and particle monitor
US20090299652A1 (en) * 2008-05-30 2009-12-03 Tokyo Electron Limited Method of presuming interior situation of process chamber and storage medium
CN107368232A (en) * 2017-06-29 2017-11-21 联想(北京)有限公司 A kind of display control method, electronic equipment and computer-readable recording medium

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Application publication date: 20211116