CN113191110B - DDR4 address control line mapping and Ball arrangement method for T-shaped topological structure - Google Patents

DDR4 address control line mapping and Ball arrangement method for T-shaped topological structure Download PDF

Info

Publication number
CN113191110B
CN113191110B CN202110495221.0A CN202110495221A CN113191110B CN 113191110 B CN113191110 B CN 113191110B CN 202110495221 A CN202110495221 A CN 202110495221A CN 113191110 B CN113191110 B CN 113191110B
Authority
CN
China
Prior art keywords
address
delay
group
control line
pcb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110495221.0A
Other languages
Chinese (zh)
Other versions
CN113191110A (en
Inventor
梁冬梅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lusheng Technology Co ltd
Original Assignee
Lusheng Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lusheng Technology Co ltd filed Critical Lusheng Technology Co ltd
Priority to CN202110495221.0A priority Critical patent/CN113191110B/en
Publication of CN113191110A publication Critical patent/CN113191110A/en
Application granted granted Critical
Publication of CN113191110B publication Critical patent/CN113191110B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00Computer-aided design [CAD]
    • G06F30/30Circuit design
    • G06F30/39Circuit design at the physical level
    • G06F30/392Floor-planning or layout, e.g. partitioning or placement
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00Computer-aided design [CAD]
    • G06F30/30Circuit design
    • G06F30/39Circuit design at the physical level
    • G06F30/394Routing
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00Computer-aided design [CAD]
    • G06F30/30Circuit design
    • G06F30/39Circuit design at the physical level
    • G06F30/398Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2115/00Details relating to the type of the circuit
    • G06F2115/12Printed circuit boards [PCB] or multi-chip modules [MCM]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P90/00Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
    • Y02P90/02Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]

Abstract

The invention provides a DDR4 address control line mapping and Ball arrangement method aiming at a T-shaped topological structure, which meets the requirements of signal quality and time sequence margin. The mapping and arrangement method of the present invention is characterized in that: according to the arrangement of the via holes, the adjacent address/control lines of the via holes are distributed in a group when mapped; i.e. sharing a delay configuration when configuring the DDR controller. The point-to-point signals are allocated in a group corresponding to the same memory. The pins of the DDR controller are arranged, and the arrangement positions of the pins in the same group are adjacent to ensure similar delay. Address/control signals within the same group are routed in the same inner layer. The comprehensive eye diagram is optimal in quality, and the difficulty of winding the PCB by equal length can be reduced while the time sequence margin is maximized. The method has the advantages that the maximization of the address/control line time sequence margin is met while special PCB equal-length processing is not needed, the PCB design is simplified, the wiring area is reduced, and meanwhile, the consistency of the hardware design is ensured.

Description

DDR4 address control line mapping and Ball arrangement method for T-shaped topological structure
Technical Field
The invention relates to the field of system-on-chip (SOC) packaging arrangement and address mapping, in particular to a DDR4 address control line mapping and Ball arrangement method aiming at a T-shaped topological structure.
Background
With the increase of the main frequency of the system, the application of high-definition cameras and more algorithm applications, such as face recognition, mobile phones and intelligent camera systems, have become higher and higher. The DDR memory rate used in the system is also increased, and the number of memories is also increased. With the signal integrity problem caused by the rate improvement, the topology structure of the multiple memories also makes the signal extremely deteriorated, and two address/control topologies commonly used in the industry have advantages and disadvantages:
the T-topology, a scheme commonly used for two-chip memories, is not suitable for multiple chips. The Fly-by structure is mostly used for a multi-chip scheme, the more the number of chips is, the more obvious the signal degradation is, the special design is required for the impedance of the branch and the main line to meet the impedance matching, and meanwhile, the influence of the length of the branch on the speed is obvious. The scheme of the T-shaped topology discussed herein is mostly used for driving two memories simultaneously, and the layout wiring area of the T-shaped structure is smaller than that of the Fly-by structure. The method has the defects that in a high-speed application scene, the delay difference from the bifurcation point of the T-shaped structure to the two memories affects the quality of an eye diagram and establishes the margin of the holding time. In order to ensure that the design meets the requirements of signal quality and timing margin, delay such as branch control is needed, delay difference of a plurality of signal lines in a control group is also needed, and the design requirement on the PCB strictly leads to enlarged wiring area. Meanwhile, the method is easy to neglect, and due to different wiring delays of the unit length of the outer layer and the unit length of the inner layer of the PCB, equal-length wiring can be caused, the actual delays are not consistent, and the requirement of signal quality control is delivered to a customer to have uncontrollable factors.
Disclosure of Invention
The invention provides a DDR4 address control line mapping and Ball arrangement method aiming at a T-shaped topological structure, which meets the requirements of signal quality and time sequence margin.
The technical problems to be solved by the invention are realized by the following technical scheme:
the invention provides a DDR4 address control line mapping and Ball arrangement method aiming at a T-shaped topological structure, which is characterized in that: according to the arrangement of the via holes, the adjacent address/control lines of the via holes are distributed in a group when mapped; i.e. sharing a delay configuration when configuring the DDR controller.
Preferably, the point-to-point signals are allocated within a group corresponding to the same memory.
Preferably, the pins of the DDR controller are arranged, and the arrangement positions of the pins in the same group are adjacent to each other so as to ensure similar delay.
Preferably, address/control signals within the same group are routed in the same inner layer.
The invention has the beneficial effects that: the comprehensive eye diagram is optimal in quality, the difficulty of PCB winding with equal length can be reduced while the maximization of time sequence margin is realized, and the wiring area of the PCB is reduced. The method has the advantages that the maximization of the address/control line time sequence margin is met while special PCB equal-length processing is not needed, the PCB design is simplified, the wiring area is reduced, and meanwhile, the consistency of the hardware design is ensured.
Drawings
FIG. 1 is a DDR4 address control line mapping and Ball alignment method application case for a T-type topology of the present invention;
FIG. 2 is a T-topology for which the DDR4 address control line mapping and Ball alignment method of the present invention is directed.
Detailed Description
The present invention will be described in further detail with reference to the following examples in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Fig. 1 is a diagram showing an application case of the DDR4 address control line mapping and Ball arrangement method for the T-type topology of the present embodiment. A and B are two address/control signals in the same group, and the delay of each segment is shown in the following chart, and for convenience of discussion, it is assumed that branches after T type are equal, namely T a3 =ta4,t b3 =tb4. At the receiving end of any one memory, the delay of the address control line satisfies the formula 1. From the previous discussion, the delay of the signals within the same group, network a, network B, will affect the size of the sampling window. For maximum timing margin, |t A -t B The i should be less than the delay adjustment step of the controller, or less. To meet this requirement, it is necessary to control |t on the PCB trace A -t B | a. The invention relates to a method for producing a fibre-reinforced plastic composite. Because of the fixed location of memory addresses in the JEDEC protocol, t a3 ,t b3 It is clear that t a2 ,t a3 ,t b2 ,t b3 The position of the Ball corresponding to the DDR controller is related, and if the network a and the network B are relatively far away from the DDR controller, delay compensation needs to be performed on the PCB trace to satisfy the delay deviation. Thus, the wiring difficulty and the wiring area of the PCB are increased.
The scheme provided by the invention is from the ball map arrangement and address/control signal mapping scheme, and the optimal timing margin is satisfied without additional PCB wiring compensation.
Equation 1:
t A =t a1 +t a2 +t a3
t B =t b1 +t b2 +t b3
the address Ball location of DDR4 memory, except for individual address signals such as RAS, CAS, BG1, is fixed because of the different number of pages, banks of memory. When a T-shaped mechanism is used, the two memories are in a back-to-back scheme, and the signal fanout mode is relatively fixed.
The principles of address mapping and pin distribution and PCB routing are as follows:
according to the arrangement of the via locations, the adjacent addresses/control lines of the via are allocated in a group when mapped. I.e. sharing a delay configuration when configuring the DDR controller.
The pins of the DDR controller are arranged, and the arrangement positions of the pins in the same group are adjacent to ensure that the delays are similar, and the delay adjustment is satisfied without additional routing with equal length
Address/control signals in the same group are routed in the same inner layer, so that signal delay differences in the same group caused by inconsistent via lengths can be avoided.
CS, ODT, CKE point-to-point signals, corresponding to one group of the same memory group
According to the three principles, the controller address remapping, pin arrangement and PCB wiring can meet the maximization of the address/control line time sequence margin without special PCB equal-length processing, simplify the PCB design, reduce the wiring area and ensure the consistency of hardware design.
The JESD79-4A protocol requires that the timing requirements for the DDR memory address signals meet certain setup hold times at the receiving end of the address signals, i.e., the input end of the memory. In practical applications, the address signal and the clock signal have delay adjustment mechanisms, which can adjust the delay of the clock and the address/control signal, i.e. adjust the signal sampling point, at least within one UI (unit time interval). The signal integrity simulation is no longer concerned with the specific setup hold time, but rather with the effective sampling window of the signal, i.e., the signal eye width. Considering the signal eye width, in addition to the sampling window of the memory itself, DDR controller clock jitter, power-induced signal jitter, and delay differences for the same set of address/control lines are also required.
It should be noted that, in the configuration of the DDR controller, the same group of address/control signals shares a delay configuration, which means that signal lines in the same group need to control delay differences between signal packages and PCBs in the group, which is smaller than a step of delay adjustment, so as to ensure delay adjustment of clocks and address/control signals, and to ensure effective setup and hold time within a minimum signal eye width. To meet the timing requirement, the signals CA1, CA2 in the same group are stepped by an additional delay of t=n. During the adjustment, CA1 and CA2 add additional sampling window requirements due to the fixed existence of delay delta t of the PCB due to the packaging. It is therefore necessary for address/control signal lines to be concerned about the delay difference of a plurality of signal lines within the same delay configuration group, in addition to the eye width.
Fig. 2 is a T-type topology for which the DDR4 address control line mapping and Ball arrangement method for T-type topology of the present embodiment is directed. After the DDR address/control line is routed to the surface layer for fanning out, the DDR address/control line passes through the branch point from the inner layer to the T-shaped structure, and then passes through the top layer and the bottom layer to the two memories respectively from the branch point, wherein the positions of the two memories are opposite. In order to analyze the influence of branching, a T-type topology is modeled in simulation software, the length from a controller to a branching point is fixed to l1=15 mm, the length of a trace from the branching point to a first memory is L2, and the length of a trace from the branching point to a second memory is L3. The following simulation cases adjust for the change in the length eye pattern of L2, L3.
L1=15mm, l2=5mm, l3=3mm, 4mm,5mm,6mm,7mm,8mm,9mm were fixed. From the simulation results, it can be seen that the eye patterns of memory 1 and memory 2 are identical when the lengths of the branches are equal. When the lengths of the branches are not equal, the memory reception eye pattern of the branch short is deteriorated, and as the difference in the branch lengths becomes larger, the eye pattern is further deteriorated. Fixing the eye patterns l1=15mm, l2=l3=5 mm and l2=l3=12 mm, it can be seen that the eye pattern of the signal deteriorates as the absolute length of the branches becomes longer. In practical application, due to crosstalk, as the length of the wiring is longer, crosstalk signal coupling is increased, and the eye diagram of the long branch is more obviously deteriorated.
To analyze the delay impact of vias, modeling was as follows: 6 a stacked layer structure, net a, fans out from the top layer through the vias to the fourth layer and then from the vias to the top layer. Network B fans out from the top layer through vias to the third layer and then through Kong Daoding layers of network. The length of each section is equal, the third layer and the fourth layer are complete, and the wiring length and the time delay are equal. In other words, the delay of the two networks varies, only from top layer to third layer, and from top layer to layer 4.
The delay results are as follows: the difference in via length from top layer to third layer and top layer to layer 4 resulted in a delay of 28.3ps depending on the stack. The adjustment of the address/control lines steps with respect to the delay difference of the tracks, which delay difference is already not negligible. This presents a problem when the thickness of the trace stack, i.e. the via length, is not fixed and the delays per unit length of the outer microstrip line and the inner microstrip line are not uniform in the actual trace. This results in delay control that is difficult to control by the length of the PCB trace. Even looking at equal length traces, the delays are not equal. The delays within the group cannot be known and controlled without simulation. Even the same wiring can lead to different delay introduced by different layers of through holes due to different thicknesses of the PCB, thereby causing inconsistent hardware and uncontrollable customer design scheme.
The above simulations are combined to conclude that: layout of two memories for T-shape
When the branch lengths are equal, the signal quality is the best.
The short branch signal eye degradation is more pronounced when the branch lengths are unequal.
Also, in the case of equal branch lengths, the shorter the branches, the better the branches, the length of which affects the eye width.
If the branch length is too long, or if the difference in trace lengths of the branches is large, the width of the eye pattern and thus the rate of address/control lines may be affected.
The vias introduce additional delay, for example, the same trace, due to the different layers in which the trace is located, signal delay differences within the same set of signals.
The above simulations are based on an evaluation of a single signal line, and in a practical system, eye closure will be more pronounced due to the effects of inter-line crosstalk.
The proposal of the pin arrangement in the invention is to adjust the address/control line mapping scheme of the controller according to the fixed address signal distribution of the DRAM, and control the group delay difference of the same group of address/control lines by using the simplest PCB wiring.

Claims (1)

1. A DDR4 address control line mapping and Ball arrangement method for a T-shaped topological structure is characterized in that: according to the arrangement of the via holes, the adjacent address/control lines of the via holes are distributed in a group when mapped; namely, when the DDR controller is configured, sharing a delay configuration; the pins of the DDR controller are arranged, and the arrangement positions of the pins in the same group are adjacent to ensure that the delays are similar, and the delay adjustment is satisfied without additional routing with equal length; address/control signals in the same group are routed in the same inner layer, so that signal delay difference in the same group, which is caused by inconsistent via lengths, can be avoided; the point-to-point signals correspond to the same memory group; and satisfies the formula:
t A =t a1 +t a2 +t a3
t B =t b1 +t b2 +t b3
CN202110495221.0A 2021-05-07 2021-05-07 DDR4 address control line mapping and Ball arrangement method for T-shaped topological structure Active CN113191110B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110495221.0A CN113191110B (en) 2021-05-07 2021-05-07 DDR4 address control line mapping and Ball arrangement method for T-shaped topological structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110495221.0A CN113191110B (en) 2021-05-07 2021-05-07 DDR4 address control line mapping and Ball arrangement method for T-shaped topological structure

Publications (2)

Publication Number Publication Date
CN113191110A CN113191110A (en) 2021-07-30
CN113191110B true CN113191110B (en) 2023-08-11

Family

ID=76984017

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110495221.0A Active CN113191110B (en) 2021-05-07 2021-05-07 DDR4 address control line mapping and Ball arrangement method for T-shaped topological structure

Country Status (1)

Country Link
CN (1) CN113191110B (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7266488B1 (en) * 2003-03-05 2007-09-04 Advanced Micro Devices, Inc. Programmable pattern generation for dynamic bus signal integrity analysis
CN110428856A (en) * 2019-07-29 2019-11-08 珠海市一微半导体有限公司 It is a kind of for reading and writing the delay parameter optimization method and system of DDR memory
CN111045955A (en) * 2019-12-16 2020-04-21 瓴盛科技有限公司 Storage device with dynamically configured architecture, operation method thereof and electronic equipment
CN111683373A (en) * 2020-06-11 2020-09-18 电子科技大学 Block chain auxiliary access control-based organization network secure communication method
CN112286844A (en) * 2020-10-30 2021-01-29 烽火通信科技股份有限公司 DDR4 control method and device capable of adapting to service address mapping

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4662474B2 (en) * 2006-02-10 2011-03-30 ルネサスエレクトロニクス株式会社 Data processing device
US20180107591A1 (en) * 2011-04-06 2018-04-19 P4tents1, LLC System, method and computer program product for fetching data between an execution of a plurality of threads

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7266488B1 (en) * 2003-03-05 2007-09-04 Advanced Micro Devices, Inc. Programmable pattern generation for dynamic bus signal integrity analysis
CN110428856A (en) * 2019-07-29 2019-11-08 珠海市一微半导体有限公司 It is a kind of for reading and writing the delay parameter optimization method and system of DDR memory
CN111045955A (en) * 2019-12-16 2020-04-21 瓴盛科技有限公司 Storage device with dynamically configured architecture, operation method thereof and electronic equipment
CN111683373A (en) * 2020-06-11 2020-09-18 电子科技大学 Block chain auxiliary access control-based organization network secure communication method
CN112286844A (en) * 2020-10-30 2021-01-29 烽火通信科技股份有限公司 DDR4 control method and device capable of adapting to service address mapping

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
高速信号时延及过孔对信号完整性影响的研究;刘欢等;《工业控制计算机》;20170225(第02期);8-10 *

Also Published As

Publication number Publication date
CN113191110A (en) 2021-07-30

Similar Documents

Publication Publication Date Title
JP3455040B2 (en) Source clock synchronous memory system and memory unit
EP1723654B1 (en) Interchangeable connection arrays for double-sided dimm placement
US8760901B2 (en) Semiconductor device having a control chip stacked with a controlled chip
US7095661B2 (en) Semiconductor memory module, memory system, circuit, semiconductor device, and DIMM
US9076500B2 (en) Memory module including plural memory devices and data register buffer
US9373384B2 (en) Integrated circuit device having programmable input capacitance
US20130138898A1 (en) Memory module including plural memory devices and command address register buffer
KR20040018215A (en) Memory system and data transmission method
US7323789B2 (en) Multiple chip package and IC chips
US9330218B1 (en) Integrated circuits having input-output circuits with dedicated memory controller circuitry
US8053911B2 (en) Semiconductor device and data processor
US8036011B2 (en) Memory module for improving signal integrity and computer system having the same
US20090154212A1 (en) Memory module
US8441872B2 (en) Memory controller with adjustable width strobe interface
CN113191110B (en) DDR4 address control line mapping and Ball arrangement method for T-shaped topological structure
US7375971B2 (en) Memory module with an electronic printed circuit board and a plurality of semiconductor chips of the same type
JP4173970B2 (en) Memory system and memory module
CN109997187B (en) Crosstalk cancellation transmission bridge
JP2008153288A (en) Semiconductor device
US20080205113A1 (en) Inter-transmission multi memory chip, system including the same and associated method
US20040076002A1 (en) Memory controller
US7106613B2 (en) Memory module and a method of arranging a signal line of the same
US20110302385A1 (en) Memory device synchronization
JP2000148282A (en) Semiconductor device and module loading the semiconductor device
CN109154923A (en) Circuit board based on memory

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant