CN113075855B - Optical proximity correction method, mask manufacturing method and semiconductor structure forming method - Google Patents
Optical proximity correction method, mask manufacturing method and semiconductor structure forming method Download PDFInfo
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- CN113075855B CN113075855B CN202010012579.9A CN202010012579A CN113075855B CN 113075855 B CN113075855 B CN 113075855B CN 202010012579 A CN202010012579 A CN 202010012579A CN 113075855 B CN113075855 B CN 113075855B
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- 238000012937 correction Methods 0.000 title claims abstract description 227
- 230000003287 optical effect Effects 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000012545 processing Methods 0.000 claims abstract description 54
- 238000005070 sampling Methods 0.000 claims description 71
- 239000000758 substrate Substances 0.000 claims description 9
- 238000003672 processing method Methods 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 14
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- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
An optical proximity correction method, a mask manufacturing method and a semiconductor structure forming method, comprising the following steps: providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected; grouping the to-be-corrected graphs to obtain a plurality of graph groups, wherein each graph group comprises at least one to-be-corrected graph; after the grouping processing, performing first optical proximity correction on the graphics to be corrected in each graphics group for a plurality of times to obtain a first corrected graphics; after the first optical proximity correction, performing correction processing on the first correction patterns in each pattern group to obtain second correction patterns; and after the correction processing, performing a plurality of times of second optical proximity correction on each second correction pattern to obtain a third correction pattern. By the technical scheme, the image effect of each image to be corrected after optical proximity correction can be improved.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing technology, and in particular, to an optical proximity correction method, a mask manufacturing method, and a semiconductor structure forming method.
Background
Photolithography is a critical technique in semiconductor fabrication that enables transferring patterns from a reticle to a wafer surface to form a semiconductor product that meets design requirements. However, the existing photolithography technique is often accompanied by an optical proximity effect.
In order to correct for optical proximity effects, optical proximity correction (OPC: optical Proximity Correction) is generated. The core idea of the optical proximity correction is to build an optical proximity correction model based on consideration of canceling the optical proximity effect, and design a photomask pattern according to the optical proximity correction model, so that although the optical proximity effect occurs in the lithographic pattern corresponding to the photomask pattern, since cancellation of this phenomenon has been considered when designing the photomask pattern according to the optical proximity correction model, the lithographic pattern after lithography is close to the target pattern that the user actually wants.
However, the image effect after the optical proximity correction in the prior art still needs to be improved.
Disclosure of Invention
The invention solves the technical problem of providing an optical proximity correction method, a mask manufacturing method and a semiconductor structure forming method, which can effectively improve the graph effect after optical proximity correction.
In order to solve the above problems, the present invention provides an optical proximity correction method, comprising: providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected; grouping the to-be-corrected graphs to obtain a plurality of graph groups, wherein each graph group comprises at least one to-be-corrected graph; after the grouping processing, performing first optical proximity correction on the graphics to be corrected in each graphics group for a plurality of times to obtain a first corrected graphics; after the first optical proximity correction, performing correction processing on the first correction patterns in each pattern group to obtain second correction patterns; and after the correction processing, performing a plurality of times of second optical proximity correction on each second correction pattern to obtain a third correction pattern.
Optionally, the method for packet processing includes: dividing the graphics to be corrected with the same shape and size in the layout to be corrected into the same group, and obtaining a plurality of initial graphics groups; performing exposure treatment on the patterns to be corrected in each initial pattern group to obtain first exposure patterns corresponding to each pattern to be corrected; and acquiring a first edge position error of each first exposure pattern, dividing the patterns to be corrected corresponding to the first exposure patterns with the same first edge position error in each initial pattern group into the same group, and acquiring a plurality of pattern groups.
Optionally, the method for acquiring the first edge position error of each first exposure pattern includes: providing a target layout, wherein the target layout comprises a plurality of target graphs corresponding to the graph to be corrected; setting a plurality of first sampling points on each target graph; setting a plurality of second sampling points corresponding to the first sampling points on each first exposure pattern; marking a plurality of first sampling points along a first direction by serial numbers of 1-N, wherein N is a natural number, and N is more than or equal to 2; comparing the target pattern with the first exposure pattern, obtaining a first difference value between each first sampling point and a corresponding second sampling point, adding a plurality of first difference values, then obtaining a first average value, and taking the first average value as a first edge position error of the first exposure pattern.
Optionally, the method of correction processing includes: providing a plurality of correction values, wherein the correction value corresponding to each graphic group is different; and correcting the graphics to be corrected in each graphics group according to the correction value.
Optionally, the method for performing correction processing on the first correction pattern in each pattern group according to the correction value includes: correcting the first correction pattern through the correction value to obtain an intermediate pattern; performing exposure treatment on the intermediate patterns to obtain second exposure patterns corresponding to each intermediate pattern; acquiring a second edge position error of each second exposure pattern; and correcting the intermediate graph according to the second edge position error.
Optionally, the method for acquiring the second edge position error of each second exposure pattern includes: setting a plurality of third sampling points corresponding to the first sampling points on the second exposure pattern; and comparing the target pattern with the second exposure pattern, obtaining a second difference value between each first sampling point and a corresponding third sampling point, adding a plurality of second difference values, and then obtaining a second average value, wherein the second average value is used as a second edge position error of the second exposure pattern.
Optionally, the method for correcting the intermediate graph according to the second edge position error includes: providing a first threshold; comparing the first threshold with the second edge position error; and when the second edge position error is larger than the first threshold value, modifying the correction value to reduce the difference between the second edge position error and the first threshold value until the second edge position error is smaller than or equal to the first threshold value, and acquiring the second correction pattern.
Optionally, the method for obtaining the third correction pattern includes: performing exposure processing on the second correction patterns in each pattern group to obtain third exposure patterns corresponding to each second correction pattern; acquiring a third edge position error of each third exposure pattern; and acquiring the third correction graph according to the third edge position error.
Optionally, the method for acquiring the third edge position error of each third exposure pattern includes: setting a plurality of fourth sampling points corresponding to the first sampling points on the third exposure pattern; and comparing the target pattern with the third exposure pattern, obtaining a third difference value between the 1 st or the N first sampling point and the corresponding fourth sampling point, and taking the third difference value as a third edge position error of the third exposure pattern.
Optionally, the method for acquiring the third correction pattern according to the third edge position error includes: providing a second threshold; comparing the second threshold with the third edge position error; and when the third edge position error is larger than the second threshold value, performing a plurality of second optical proximity corrections on the second correction pattern to reduce the difference between the third edge position error and the second threshold value until the third edge position error is smaller than or equal to the second threshold value, and acquiring the third correction pattern.
Correspondingly, the invention also provides a manufacturing method of the mask, which comprises the following steps: providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected; grouping the to-be-corrected graphs to obtain a plurality of graph groups, wherein each graph group comprises at least one to-be-corrected graph; after the grouping processing, performing first optical proximity correction on the graphics to be corrected in each graphics group for a plurality of times to obtain a first corrected graphics; after the first optical proximity correction, performing correction processing on the first correction patterns in each pattern group to obtain second correction patterns; after the correction processing, performing a plurality of times of second optical proximity correction on each second correction pattern to obtain a third correction pattern; and manufacturing a mask plate by using the third corrected graph.
Correspondingly, the invention also provides a method for forming the semiconductor structure, which comprises the following steps: providing a substrate, wherein the surface of the substrate is provided with a layer to be etched; providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected; grouping the to-be-corrected graphs to obtain a plurality of graph groups, wherein each graph group comprises at least one to-be-corrected graph; after the grouping processing, performing first optical proximity correction on the graphics to be corrected in each graphics group for a plurality of times to obtain a first corrected graphics; after the first optical proximity correction, performing correction processing on the first correction patterns in each pattern group to obtain second correction patterns; after the correction processing, performing a plurality of times of second optical proximity correction on each second correction pattern to obtain a third correction pattern; and manufacturing a mask plate by using the third corrected graph, and performing a patterning process on the substrate by using the mask plate as a mask to form the semiconductor structure.
Compared with the prior art, the technical scheme of the invention has the following advantages:
According to the technical scheme, the patterns to be corrected are subjected to grouping processing to obtain a plurality of pattern groups, then first optical proximity correction and correction processing are performed on the patterns to be corrected in each pattern group to obtain second correction patterns, the overlapping ratio of transition sections of the second exposure patterns obtained after the second correction patterns are subjected to exposure processing to the target patterns is improved, after correction processing, second optical proximity correction is performed on each second correction pattern for a plurality of times to obtain a third correction pattern, and the overlapping ratio of edge sections of the third exposure patterns obtained after the third correction pattern is subjected to exposure processing to the target patterns is improved, so that the effect of improving the patterns of each pattern to be corrected after optical proximity correction is achieved.
Further, in the technical scheme of the invention, a second difference value between each first sampling point and a corresponding third sampling point is obtained, a plurality of second difference values are added, a second average value is obtained, and the second average value is used as a second edge position error of the second exposure pattern. The second edge position error is used as a reference for correction processing, so that the second edge position error of the transition section of the second exposure pattern and the target pattern can be reduced, and the coincidence ratio of the transition section of the second exposure pattern and the target pattern can be effectively improved.
Further, in the technical scheme of the invention, a third difference value between the 1 st or the N first sampling point and the corresponding fourth sampling point is obtained, and the third difference value is used as a third edge position error of the third exposure pattern. The third edge position error is used as a reference for a plurality of times of second optical proximity correction, so that the third edge position error of the transition section of the third exposure pattern and the target pattern can be reduced, and the coincidence ratio of the edge sections of the third exposure pattern and the target pattern can be effectively improved.
Drawings
FIG. 1 is a schematic diagram of an optical proximity correction method;
FIG. 2 is a flow chart of an optical proximity correction method according to an embodiment of the present invention;
fig. 3 to 13 are schematic structural diagrams illustrating steps of an optical proximity correction method according to an embodiment of the invention.
Detailed Description
As described in the background art, the graphic effect after the optical proximity correction in the prior art is still to be improved. The following will make a detailed description with reference to the accompanying drawings.
Referring to fig. 1, a target layout is provided, wherein the target layout comprises a plurality of target graphs 100; providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected corresponding to the target graph; and carrying out optical proximity correction on the to-be-corrected version graph for a plurality of times to obtain an intermediate graph, wherein the intermediate graph comprises a plurality of intermediate graphs corresponding to the to-be-corrected graph.
With continued reference to fig. 1, performing exposure processing on the intermediate patterns to obtain exposure patterns 101 corresponding to each intermediate pattern; comparing the exposure patterns 101 with the target patterns 100, and acquiring a first edge position error of each exposure pattern 101; and providing a threshold value, and finishing optical proximity correction when the first edge position error is smaller than or equal to the threshold value, wherein the intermediate pattern is a final correction pattern.
The method for acquiring the edge position error of each exposure pattern 101 comprises the following steps: setting a plurality of first sampling points on each target graph 100; setting a plurality of second sampling points corresponding to the first sampling points on each exposure pattern 101; marking a plurality of first sampling points along a first direction by serial numbers of 1-N, wherein N is a natural number, and N is more than or equal to 2; comparing the target pattern 100 with the exposure pattern 101, obtaining a difference value between the 1 st or the N first sampling point and the corresponding second sampling point, and taking the difference value as a first edge position error of the exposure pattern 101.
In the above embodiment, since the 1 st or nth first sampling point according to the edge position error, that is, the first sampling point located at the end position, the overlap ratio of the edge segment a between the exposure pattern 101 and the target pattern 100 is thus obtained is high, but the corresponding second edge position error is still large at the first sampling point positions from the 2 nd to the N-1 st, which results in the overlap ratio of the exposure pattern 101 and the transition segment B of the target pattern 100 being poor, so the pattern effect after the optical proximity correction is still to be improved.
On the basis, the invention provides an optical proximity correction method and a mask manufacturing method, which are characterized in that a plurality of pattern groups are obtained by grouping the patterns to be corrected, then a first optical proximity correction and correction treatment are carried out on the patterns to be corrected in each pattern group, a second correction pattern is obtained, the overlapping ratio of a transition section of the second exposure pattern obtained after the second correction pattern is subjected to exposure treatment and a target pattern is improved, after the correction treatment, a plurality of second optical proximity corrections are carried out on each second correction pattern, a third correction pattern is obtained, and the overlapping ratio of the third exposure pattern obtained after the third correction pattern is subjected to exposure treatment and the edge section of the target pattern is improved, so that the image effect of each pattern to be corrected after the optical proximity correction is improved.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention briefly described above will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings.
Fig. 2 is a flowchart of an optical proximity correction method according to an embodiment of the present invention, including:
step S21, providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected;
S22, carrying out grouping processing on the to-be-corrected graph to obtain a plurality of graph groups, wherein each graph group comprises at least one to-be-corrected graph;
step S23, after the grouping processing, performing a plurality of times of first optical proximity correction on the graphics to be corrected in each graphics group to obtain a first corrected graphics;
step S24, after the first optical proximity correction, performing correction processing on the first correction patterns in each pattern group to obtain second correction patterns;
Step S25, after the correction processing, performing a plurality of second optical proximity corrections on each of the second correction patterns, to obtain a third correction pattern.
The steps of the optical proximity correction method are described in detail below with reference to the accompanying drawings.
Fig. 3 to 13 are schematic views illustrating the structure of each step of an optical proximity correction method according to an embodiment of the invention.
Referring to fig. 3, a layout 202 to be modified is provided, and the layout 202 to be modified includes a plurality of graphs 201 to be modified.
The to-be-corrected layout 202 is used for obtaining an exposure pattern and adjusting in the subsequent optical proximity correction to obtain the influence of the optical proximity effect on the pattern, and the optical proximity correction is performed by modifying the to-be-corrected layout 202.
In this embodiment, the to-be-corrected version 202 is consistent with the target layout provided later; in other embodiments, a part of optical proximity correction may be introduced into the layout to be corrected, so as to further improve the convergence speed of the optical proximity correction.
Referring to fig. 4, the layout 202 to be modified is subjected to grouping processing, so as to obtain a plurality of graph groups, wherein each graph group comprises at least one graph 201 to be modified.
In this embodiment, the purpose of the grouping processing is to divide the to-be-corrected graphics 201 with the same type into the same graphics group, and then perform targeted adjustment in the subsequent correction processing according to the problems of different graphics groups, so as to achieve that all to-be-corrected graphics 201 can be adjusted correspondingly.
In this embodiment, the packet processing method specifically refers to fig. 5 and fig. 6.
Referring to fig. 5, the graphics to be corrected 201 with the same shape and size in the version to be corrected 202 are divided into the same groups, and a plurality of initial graphics groups are obtained; and performing exposure processing on the to-be-corrected graphs 201 in each initial graph group, and obtaining a first exposure graph 204 corresponding to each to-be-corrected graph 201.
Referring to fig. 6, a first edge position error of each of the first exposure patterns 204 is obtained; and dividing the first correction patterns 203 corresponding to the first exposure patterns 204 with the same first edge position error in each initial pattern group into the same group, and obtaining a plurality of pattern groups.
With continued reference to fig. 6, the method for obtaining the first edge position error of each of the first exposure patterns 204 includes: providing a target layout, wherein the target layout comprises a plurality of target graphs 205 corresponding to the graph 201 to be corrected; setting a plurality of first sampling points on each target graph 205; setting a plurality of second sampling points corresponding to the first sampling points on each first exposure pattern 204; marking a plurality of first sampling points with serial numbers of 1-N along a first direction X, wherein N is a natural number, and N is more than or equal to 2, comparing the target pattern 205 with the first exposure pattern 204, obtaining a first difference value between each first sampling point and a corresponding second sampling point, adding the plurality of first difference values, then obtaining a first average value, and taking the first average value as a first edge position error of the first exposure pattern.
In this embodiment, a simulation method is used to obtain a first exposure pattern 204 corresponding to the first correction pattern 203.
Referring to fig. 7, after the grouping process, the first optical proximity correction is performed on the to-be-corrected patterns 201 in each of the pattern groups several times, so as to obtain a first corrected pattern 203.
In this embodiment, the first optical proximity correction is performed on the pattern 201 to be corrected for several times, and the first corrected pattern 203 is obtained until the edges of the first exposure pattern corresponding to the first corrected pattern 203 are all converged, which aims to provide a basis for the subsequent correction process, in which correction is required according to the edge position error of each first corrected pattern 203 since each first corrected pattern 203 has a true edge position error after the several times of the first optical proximity correction are performed.
Referring to fig. 8, after the first optical proximity correction, a correction process is performed on the first correction pattern 203 in each pattern group to obtain a second correction pattern 206.
In this embodiment, the correction process is used to increase the overlap ratio of the transition segment between the second exposure pattern and the target pattern 205, which is obtained by exposing the second correction pattern 206.
The method of correction processing includes: providing a plurality of correction values n, wherein the correction values n corresponding to each graphic group are different; and performing correction processing on the first correction pattern 203 in each pattern group according to the correction value n.
The method for performing the correction processing on the first correction pattern 203 in each pattern group according to the correction value n specifically please refer to fig. 9 and 10.
Referring to fig. 9, the first correction pattern 203 is corrected by the correction value n to obtain an intermediate pattern; and performing exposure processing on the intermediate patterns to obtain second exposure patterns 207 corresponding to each intermediate pattern.
Referring to fig. 10, a second edge position error of each of the second exposure patterns 207 is obtained; providing a first threshold c; comparing the first threshold c with the second edge position error; when the second edge position error is greater than the first threshold c, the correction value n is modified to reduce the difference between the second edge position error and the first threshold c until the second edge position b error is less than or equal to the first threshold c, and the second corrected graph 206 is acquired.
With continued reference to fig. 10, the method for obtaining the second edge position error of each of the second exposure patterns 207 includes: setting a plurality of third sampling points corresponding to the first sampling points on the second exposure pattern 207; comparing the target pattern 205 with the second exposure pattern 207, obtaining a second difference value between each first sampling point and a corresponding third sampling point, adding a plurality of second difference values, and then obtaining a second average value, wherein the second average value is used as a second edge position error of the second exposure pattern 207.
In this embodiment, a second difference between each first sampling point and a corresponding third sampling point is obtained, and a second average value is obtained after adding a plurality of the second differences, and the second average value is used as a second edge position error of the second exposure pattern 207. By using the second edge position error as a reference for the correction process, the second edge position error of the transition section a of the second exposure pattern 207 and the target pattern 205 can be reduced, so as to effectively improve the contact ratio of the second exposure pattern 207 and the transition section a of the target pattern 205.
Referring to fig. 11, after the correction process, a plurality of second optical proximity corrections are performed on each of the second correction patterns 206, so as to obtain a third correction pattern 208.
In this embodiment, performing the second optical proximity correction on each of the second corrected patterns 206 several times is used to increase the contact ratio between the third exposed pattern obtained by the exposure processing of the third corrected pattern 208 and the edge section of the target pattern 205, so as to achieve the effect of increasing the pattern effect of each of the patterns 201 to be corrected after the optical proximity correction.
The method for obtaining the third correction pattern 208 is specifically shown in fig. 12 and 13.
Referring to fig. 12, the second correction patterns 206 in each pattern group are subjected to exposure processing, so as to obtain a third exposure pattern 209 corresponding to each second correction pattern 206.
Referring to fig. 13, a third edge position error a of each of the third exposure patterns 209 is obtained; providing a second threshold e; comparing the second threshold e with the third edge position error a; and when the third edge position error a is greater than the second threshold e, performing a plurality of second optical proximity corrections on the second correction pattern 206 to reduce the difference between the third edge position error a and the second threshold e until the third edge position error a is less than or equal to the second threshold e, and obtaining the third correction pattern 208.
With continued reference to fig. 13, the method for obtaining the third edge position error a of each third exposure pattern 209 includes: setting a plurality of fourth sampling points corresponding to the first sampling points on the third exposure pattern 209; and comparing the target pattern 205 with the third exposure pattern 209, and obtaining a third difference between the 1 st or the N first sampling point and the corresponding fourth sampling point, wherein the third difference is used as a third edge position error a of the third exposure pattern 209.
In this embodiment, a third difference between the 1 st or nth first sampling point and the corresponding fourth sampling point is obtained, and the third difference is used as a third edge position error a of the third exposure pattern. By using the third edge position error a as a reference for several second optical proximity corrections, the third edge position error a of the edge segment B of the third exposure pattern 209 and the target pattern 205 can be reduced, so as to effectively improve the contact ratio of the third exposure pattern 209 and the edge segment B of the target pattern 205.
Correspondingly, the invention also provides a manufacturing method of the mask, which comprises the following steps: providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected; grouping the to-be-corrected graphs to obtain a plurality of graph groups, wherein each graph group comprises at least one to-be-corrected graph; after the grouping processing, performing first optical proximity correction on the graphics to be corrected in each graphics group for a plurality of times to obtain a first corrected graphics; after the first optical proximity correction, performing correction processing on the first correction patterns in each pattern group to obtain second correction patterns; after the correction processing, performing a plurality of times of second optical proximity correction on each second correction pattern to obtain a third correction pattern; and manufacturing a mask plate by using the third corrected graph.
Correspondingly, the invention also provides a method for forming the semiconductor structure, which comprises the following steps: providing a substrate, wherein the surface of the substrate is provided with a layer to be etched; providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected; grouping the to-be-corrected graphs to obtain a plurality of graph groups, wherein each graph group comprises at least one to-be-corrected graph; after the grouping processing, performing first optical proximity correction on the graphics to be corrected in each graphics group for a plurality of times to obtain a first corrected graphics; after the first optical proximity correction, performing correction processing on the first correction patterns in each pattern group to obtain second correction patterns; after the correction processing, performing a plurality of times of second optical proximity correction on each second correction pattern to obtain a third correction pattern; and manufacturing a mask plate by using the third corrected graph, and performing a patterning process on the substrate by using the mask plate as a mask to form the semiconductor structure.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.
Claims (10)
1. An optical proximity correction method, comprising:
Providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected;
grouping the to-be-corrected graphs to obtain a plurality of graph groups, wherein each graph group comprises at least one to-be-corrected graph;
The packet processing method comprises the following steps: dividing the graphics to be corrected with the same shape and size in the layout to be corrected into the same group, and obtaining a plurality of initial graphics groups; performing exposure treatment on the patterns to be corrected in each initial pattern group to obtain first exposure patterns corresponding to each pattern to be corrected; acquiring a first edge position error of each first exposure pattern, dividing patterns to be corrected corresponding to first exposure patterns with the same first edge position error in each initial pattern group into the same group, and acquiring a plurality of pattern groups;
The method for acquiring the first edge position error of each first exposure pattern comprises the following steps: providing a target layout, wherein the target layout comprises a plurality of target graphs corresponding to the graph to be corrected; setting a plurality of first sampling points on each target graph; setting a plurality of second sampling points corresponding to the first sampling points on each first exposure pattern; marking a plurality of first sampling points along a first direction by serial numbers of 1-N, wherein N is a natural number, and N is more than or equal to 2; comparing the target pattern with the first exposure pattern, obtaining a first difference value between each first sampling point and a corresponding second sampling point, adding a plurality of first difference values, and then obtaining a first average value, wherein the first average value is used as a first edge position error of the first exposure pattern;
After the grouping processing, performing first optical proximity correction on the graphics to be corrected in each graphics group for a plurality of times to obtain a first corrected graphics;
after the first optical proximity correction, performing correction processing on the first correction patterns in each pattern group to obtain second correction patterns;
and after the correction processing, performing a plurality of times of second optical proximity correction on each second correction pattern to obtain a third correction pattern.
2. The optical proximity correction method according to claim 1, wherein the correction processing method includes: providing a plurality of correction values, wherein the correction value corresponding to each graphic group is different;
And correcting the graphics to be corrected in each graphics group according to the correction value.
3. The optical proximity correction method according to claim 2, wherein the method of performing correction processing on the first correction pattern in each of the pattern groups in accordance with the correction value includes: correcting the first correction pattern through the correction value to obtain an intermediate pattern; performing exposure treatment on the intermediate patterns to obtain second exposure patterns corresponding to each intermediate pattern; acquiring a second edge position error of each second exposure pattern; and correcting the intermediate graph according to the second edge position error.
4. The optical proximity correction method of claim 3 wherein the method of obtaining the second edge position error of each of the second exposure patterns comprises: setting a plurality of third sampling points corresponding to the first sampling points on the second exposure pattern; and comparing the target pattern with the second exposure pattern, obtaining a second difference value between each first sampling point and a corresponding third sampling point, adding a plurality of second difference values, and then obtaining a second average value, wherein the second average value is used as a second edge position error of the second exposure pattern.
5. The optical proximity correction method as set forth in claim 3, wherein the method of correcting the intermediate pattern according to the second edge position error includes: providing a first threshold; comparing the first threshold with the second edge position error; and when the second edge position error is larger than the first threshold value, modifying the correction value to reduce the difference between the second edge position error and the first threshold value until the second edge position error is smaller than or equal to the first threshold value, and acquiring the second correction pattern.
6. The optical proximity correction method of claim 1 wherein the method of obtaining a third corrected pattern comprises: performing exposure processing on the second correction patterns in each pattern group to obtain third exposure patterns corresponding to each second correction pattern; acquiring a third edge position error of each third exposure pattern; and acquiring the third correction graph according to the third edge position error.
7. The optical proximity correction method of claim 6 wherein the method of obtaining a third edge position error for each of the third exposure patterns comprises: setting a plurality of fourth sampling points corresponding to the first sampling points on the third exposure pattern; and comparing the target pattern with the third exposure pattern, obtaining a third difference value between the 1 st or the N first sampling point and the corresponding fourth sampling point, and taking the third difference value as a third edge position error of the third exposure pattern.
8. The optical proximity correction method of claim 6 wherein the method of obtaining the third corrected graph based on the third edge position error comprises: providing a second threshold; comparing the second threshold with the third edge position error; and when the third edge position error is larger than the second threshold value, performing a plurality of second optical proximity corrections on the second correction pattern to reduce the difference between the third edge position error and the second threshold value until the third edge position error is smaller than or equal to the second threshold value, and acquiring the third correction pattern.
9. A manufacturing method of a mask plate is characterized by comprising the following steps: providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected; grouping the to-be-corrected graphs to obtain a plurality of graph groups, wherein each graph group comprises at least one to-be-corrected graph; the packet processing method comprises the following steps: dividing the graphics to be corrected with the same shape and size in the layout to be corrected into the same group, and obtaining a plurality of initial graphics groups; performing exposure treatment on the patterns to be corrected in each initial pattern group to obtain first exposure patterns corresponding to each pattern to be corrected; acquiring a first edge position error of each first exposure pattern, dividing patterns to be corrected corresponding to first exposure patterns with the same first edge position error in each initial pattern group into the same group, and acquiring a plurality of pattern groups; the method for acquiring the first edge position error of each first exposure pattern comprises the following steps: providing a target layout, wherein the target layout comprises a plurality of target graphs corresponding to the graph to be corrected; setting a plurality of first sampling points on each target graph; setting a plurality of second sampling points corresponding to the first sampling points on each first exposure pattern; marking a plurality of first sampling points along a first direction by serial numbers of 1-N, wherein N is a natural number, and N is more than or equal to 2; comparing the target pattern with the first exposure pattern, obtaining a first difference value between each first sampling point and a corresponding second sampling point, adding a plurality of first difference values, and then obtaining a first average value, wherein the first average value is used as a first edge position error of the first exposure pattern; after the grouping processing, performing first optical proximity correction on the graphics to be corrected in each graphics group for a plurality of times to obtain a first corrected graphics; after the first optical proximity correction, performing correction processing on the first correction patterns in each pattern group to obtain second correction patterns; after the correction processing, performing a plurality of times of second optical proximity correction on each second correction pattern to obtain a third correction pattern; and manufacturing a mask plate by using the third corrected graph.
10. A method of forming a semiconductor structure, comprising: providing a substrate, wherein the surface of the substrate is provided with a layer to be etched; providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected; grouping the to-be-corrected graphs to obtain a plurality of graph groups, wherein each graph group comprises at least one to-be-corrected graph; the packet processing method comprises the following steps: dividing the graphics to be corrected with the same shape and size in the layout to be corrected into the same group, and obtaining a plurality of initial graphics groups; performing exposure treatment on the patterns to be corrected in each initial pattern group to obtain first exposure patterns corresponding to each pattern to be corrected; acquiring a first edge position error of each first exposure pattern, dividing patterns to be corrected corresponding to first exposure patterns with the same first edge position error in each initial pattern group into the same group, and acquiring a plurality of pattern groups; the method for acquiring the first edge position error of each first exposure pattern comprises the following steps: providing a target layout, wherein the target layout comprises a plurality of target graphs corresponding to the graph to be corrected; setting a plurality of first sampling points on each target graph; setting a plurality of second sampling points corresponding to the first sampling points on each first exposure pattern; marking a plurality of first sampling points along a first direction by serial numbers of 1-N, wherein N is a natural number, and N is more than or equal to 2; comparing the target pattern with the first exposure pattern, obtaining a first difference value between each first sampling point and a corresponding second sampling point, adding a plurality of first difference values, and then obtaining a first average value, wherein the first average value is used as a first edge position error of the first exposure pattern; after the grouping processing, performing first optical proximity correction on the graphics to be corrected in each graphics group for a plurality of times to obtain a first corrected graphics; after the first optical proximity correction, performing correction processing on the first correction patterns in each pattern group to obtain second correction patterns; after the correction processing, performing a plurality of times of second optical proximity correction on each second correction pattern to obtain a third correction pattern; manufacturing a mask plate by using the third corrected graph; and carrying out a patterning process on the substrate by taking the mask plate as a mask to form the semiconductor structure.
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