CN113075855A - Optical proximity correction method, mask manufacturing method and semiconductor structure forming method - Google Patents
Optical proximity correction method, mask manufacturing method and semiconductor structure forming method Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims abstract description 92
- 238000000034 method Methods 0.000 title claims abstract description 64
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000012545 processing Methods 0.000 claims abstract description 37
- 238000005070 sampling Methods 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 9
- 238000003672 processing method Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 13
- 230000007704 transition Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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Abstract
An optical proximity correction method, a manufacturing method of a mask and a forming method of a semiconductor structure comprise the following steps: providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected; grouping the layout to be corrected to obtain a plurality of graphic groups, wherein each graphic group comprises at least one graphic to be corrected; after the grouping processing, carrying out a plurality of times of first optical proximity correction on the graph to be corrected in each graph group to obtain a first corrected graph; after the first optical proximity correction, correcting the first corrected graph in each graph group to obtain a second corrected graph; and after the correction processing, carrying out a plurality of times of second optical proximity correction on each second correction pattern to obtain a third correction pattern. By the technical scheme, the graphic effect of each image to be corrected after optical proximity correction can be improved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to an optical proximity correction method, a manufacturing method of a mask and a forming method of a semiconductor structure.
Background
The photoetching technology is a vital technology in the semiconductor manufacturing technology, and can realize the transfer of a pattern from a mask to the surface of a silicon wafer to form a semiconductor product meeting the design requirement. However, optical proximity effect is often accompanied in the existing lithography technology.
In order to correct for Optical Proximity effects, an Optical Proximity Correction (OPC) is generated. The core idea of optical proximity correction is to establish an optical proximity correction model based on consideration of counteracting optical proximity effect, and design a photomask pattern according to the optical proximity correction model, so that although the optical proximity effect occurs to the photomask pattern corresponding to the photoetched photoetching pattern, the counteraction of the phenomenon is considered when the photomask pattern is designed according to the optical proximity correction model, and therefore, the photoetched photoetching pattern is close to a target pattern actually expected by a user.
However, the graphic effect after the optical proximity correction in the prior art still needs to be improved.
Disclosure of Invention
The invention provides an optical proximity correction method, a mask manufacturing method and a semiconductor structure forming method, which can effectively improve the graphic effect after optical proximity correction.
To solve the above problems, the present invention provides an optical proximity correction method, including: providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected; grouping the layout to be corrected to obtain a plurality of graphic groups, wherein each graphic group comprises at least one graphic to be corrected; after the grouping processing, carrying out a plurality of times of first optical proximity correction on the graph to be corrected in each graph group to obtain a first corrected graph; after the first optical proximity correction, correcting the first corrected graph in each graph group to obtain a second corrected graph; and after the correction processing, carrying out a plurality of times of second optical proximity correction on each second correction pattern to obtain a third correction pattern.
Optionally, the packet processing method includes: dividing the graphs to be corrected with the same shape and size in the layout to be corrected into the same group, and acquiring a plurality of initial graph groups; exposing the graph to be corrected in each initial graph group to obtain a first exposed graph corresponding to each graph to be corrected; and acquiring a first edge position error of each first exposure pattern, and dividing the patterns to be corrected corresponding to the first exposure patterns with the same first edge position error in each initial pattern group into the same group to acquire a plurality of pattern groups.
Optionally, the method for obtaining the first edge position error of each first exposure pattern includes: providing a target layout, wherein the target layout comprises a plurality of target graphs corresponding to the graph to be corrected; setting a plurality of first sampling points on each target graph; setting a plurality of second sampling points corresponding to the first sampling points on each first exposure pattern; marking a plurality of first sampling points by using serial numbers of 1-N along a first direction, wherein N is a natural number and is more than or equal to 2; and comparing the target graph with the first exposure graph, acquiring a first difference value between each first sampling point and the corresponding second sampling point, adding a plurality of first difference values, and then calculating a first average value, wherein the first average value is used as a first edge position error of the first exposure graph.
Optionally, the method of correction processing includes: providing a plurality of correction values, wherein the correction values corresponding to each graph group are different; and correcting the graphs to be corrected in each graph group according to the correction value.
Optionally, the method for performing correction processing on the first corrected graph in each graph group according to the correction value includes: correcting the first corrected graph through the correction value to obtain an intermediate graph; exposing the intermediate patterns to obtain second exposed patterns corresponding to each intermediate pattern; acquiring a second edge position error of each second exposure pattern; and correcting the intermediate graph according to the second edge position error.
Optionally, the method for obtaining the second edge position error of each second exposure pattern includes: setting a plurality of third sampling points corresponding to the first sampling points on the second exposure pattern; and comparing the target graph with the second exposure graph, acquiring a second difference value between each first sampling point and a corresponding third sampling point, adding a plurality of second difference values, and then calculating a second average value, wherein the second average value is used as a second edge position error of the second exposure graph.
Optionally, the method for performing correction processing on the intermediate graph according to the second edge position error includes: providing a first threshold; comparing the first threshold to the second edge position error; and when the second edge position error is larger than the first threshold, modifying the correction value to reduce the difference between the second edge position error and the first threshold until the second edge position error is smaller than or equal to the first threshold, and acquiring the second correction graph.
Optionally, the method for obtaining the third corrected graph includes: exposing the second corrected graphs in each graph group to obtain third exposed graphs corresponding to the second corrected graphs; acquiring a third edge position error of each third exposure pattern; and obtaining the third corrected graph according to the third edge position error.
Optionally, the method for obtaining the third edge position error of each third exposure pattern includes: setting a plurality of fourth sampling points corresponding to the first sampling points on the third exposure pattern; and comparing the target graph with the third exposure graph, acquiring a third difference value between the 1 st or Nth first sampling point and a corresponding fourth sampling point, and taking the third difference value as a third edge position error of the third exposure graph.
Optionally, the method for obtaining the third corrected graph according to the third edge position error includes: providing a second threshold; comparing the second threshold to the third edge position error; and when the third edge position error is larger than the second threshold value, performing a plurality of times of second optical proximity corrections on the second corrected graph to reduce the difference between the third edge position error and the second threshold value, and obtaining a third corrected graph until the third edge position error is smaller than or equal to the second threshold value.
Correspondingly, the invention also provides a manufacturing method of the mask, which comprises the following steps: providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected; grouping the layout to be corrected to obtain a plurality of graphic groups, wherein each graphic group comprises at least one graphic to be corrected; after the grouping processing, carrying out a plurality of times of first optical proximity correction on the graph to be corrected in each graph group to obtain a first corrected graph; after the first optical proximity correction, correcting the first corrected graph in each graph group to obtain a second corrected graph; after the correction processing, performing a plurality of times of second optical proximity correction on each second correction graph to obtain a third correction graph; and manufacturing a mask plate by using the third corrected graph.
Correspondingly, the invention also provides a method for forming the semiconductor structure, which comprises the following steps: providing a substrate, wherein the surface of the substrate is provided with a layer to be etched; providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected; grouping the layout to be corrected to obtain a plurality of graphic groups, wherein each graphic group comprises at least one graphic to be corrected; after the grouping processing, carrying out a plurality of times of first optical proximity correction on the graph to be corrected in each graph group to obtain a first corrected graph; after the first optical proximity correction, correcting the first corrected graph in each graph group to obtain a second corrected graph; after the correction processing, performing a plurality of times of second optical proximity correction on each second correction graph to obtain a third correction graph; and manufacturing a mask by using the third corrected graph, and performing a patterning process on the substrate by using the mask as a mask to form the semiconductor structure.
Compared with the prior art, the technical scheme of the invention has the following advantages:
according to the technical scheme, the graphs to be corrected are grouped to obtain a plurality of graph groups, then the graphs to be corrected in each graph group are subjected to first optical proximity correction and correction to obtain a second corrected graph, the contact ratio of a second exposed graph obtained by exposure processing of the second corrected graph and an excessive section of a target graph is improved, after correction processing, second optical proximity correction is performed on each second corrected graph for a plurality of times to obtain a third corrected graph, and the contact ratio of a third exposed graph obtained by exposure processing of the third corrected graph and an edge section of the target graph is improved, so that the graph effect of each graph to be corrected after optical proximity correction is improved.
Further, in the technical solution of the present invention, a second difference between each first sampling point and a corresponding third sampling point is obtained, a second average value is obtained after adding a plurality of second differences, and the second average value is used as a second edge position error of the second exposure pattern. And the second edge position error is used as the reference of correction processing, so that the second edge position error of the second exposure pattern and the target pattern transition section can be reduced, and the overlap ratio of the second exposure pattern and the target pattern transition section is effectively improved.
Further, in the technical solution of the present invention, a third difference between the 1 st or nth first sampling point and the corresponding fourth sampling point is obtained, and the third difference is used as a third edge position error of the third exposure pattern. And the third edge position error is used as a reference for a plurality of times of second optical proximity correction, so that the third edge position error of the third exposure pattern and the target pattern transition section can be reduced, and the coincidence degree of the third exposure pattern and the target pattern edge section is effectively improved.
Drawings
FIG. 1 is a schematic diagram of a structure in an optical proximity correction method;
FIG. 2 is a flow chart of a method of optical proximity correction according to an embodiment of the present invention;
fig. 3 to 13 are schematic structural diagrams of steps of an optical proximity correction method according to an embodiment of the present invention.
Detailed Description
As described in the background, the graphic effect after the optical proximity correction in the prior art still needs to be improved. The following detailed description will be made in conjunction with the accompanying drawings.
Referring to fig. 1, a target layout is provided, where the target layout includes a plurality of target patterns 100; providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected corresponding to the target graph; and carrying out optical proximity correction on the layout to be corrected for a plurality of times to obtain an intermediate layout, wherein the intermediate layout comprises a plurality of intermediate graphs corresponding to the graphs to be corrected.
Continuing to refer to fig. 1, performing exposure processing on the intermediate patterns to obtain an exposure pattern 101 corresponding to each intermediate pattern; comparing the exposure patterns 101 with the target pattern 100 to obtain a first edge position error of each exposure pattern 101; providing a threshold value, finishing optical proximity correction when the first edge position error is less than or equal to the threshold value, and obtaining a final corrected graph as the intermediate graph.
The method for acquiring the edge position error of each exposure pattern 101 includes: setting a plurality of first sampling points on each target graph 100; setting a plurality of second sampling points corresponding to the first sampling points on each exposure pattern 101; marking a plurality of first sampling points by using serial numbers of 1-N along a first direction, wherein N is a natural number and is more than or equal to 2; comparing the target pattern 100 with the exposure pattern 101, and acquiring a difference value between the 1 st or nth first sampling point and the corresponding second sampling point, wherein the difference value is used as a first edge position error of the exposure pattern 101.
In the above embodiment, since the 1 st or nth first sampling point, i.e., the first sampling point located at the end point, on which the edge position error depends, the overlap ratio of the edge segment a between the exposure pattern 101 and the target pattern 100 obtained in this way is high, but at the position of the 2 nd to the N-1 st first sampling point, the corresponding second edge position error is still large, which may result in poor overlap ratio of the exposure pattern 101 and the transition segment B of the target pattern 100, and thus the pattern effect after the optical proximity correction still needs to be improved.
On the basis, the invention provides an optical proximity correction method and a mask manufacturing method, wherein the to-be-corrected graphs are grouped to obtain a plurality of graph groups, then the to-be-corrected graphs in each graph group are subjected to first optical proximity correction and correction treatment to obtain second corrected graphs, the coincidence degree of a second exposure graph obtained by exposing the second corrected graphs and the transition section of a target graph is improved, after the correction treatment, second optical proximity correction is performed on each second corrected graph for a plurality of times to obtain third corrected graphs, and the coincidence degree of a third exposure graph obtained by exposing the third corrected graphs and the edge section of the target graph is improved, so that the graph effect of each to-be-corrected graph after optical proximity correction is improved.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
FIG. 2 is a flowchart of an optical proximity correction method according to an embodiment of the present invention, including:
step S21, providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected;
step S22, the layout to be corrected is processed in groups to obtain a plurality of graph groups, and each graph group comprises at least one graph to be corrected;
step S23, after the grouping processing, performing a plurality of times of first optical proximity corrections on the to-be-corrected patterns in each of the pattern groups to obtain first corrected patterns;
step S24, after the first optical proximity correction, performing correction processing on the first corrected pattern in each pattern group to obtain a second corrected pattern;
step S25, after the correction processing, performing a plurality of second optical proximity corrections on each of the second corrected patterns to obtain a third corrected pattern.
The steps of the optical proximity correction method are described in detail below with reference to the accompanying drawings.
Fig. 3 to 13 are schematic structural diagrams of steps of an optical proximity correction method according to an embodiment of the present invention.
Referring to fig. 3, a layout 202 to be corrected is provided, where the layout 202 to be corrected includes a plurality of patterns 201 to be corrected.
The layout 202 to be corrected is used for obtaining an exposure pattern and adjusting in the subsequent optical proximity correction to obtain the influence of the optical proximity effect on the pattern, and the optical proximity correction is performed by modifying the layout 202 to be corrected.
In this embodiment, the layout 202 to be corrected is consistent with a subsequently provided target layout; in other embodiments, partial optical proximity correction may also be introduced into the layout to be corrected, so as to further improve the convergence speed of the optical proximity correction.
Referring to fig. 4, the layout 202 to be corrected is grouped to obtain a plurality of graphic groups, and each graphic group includes at least one graphic 201 to be corrected.
In this embodiment, the grouping process is to divide the patterns 201 to be corrected into the same pattern group, and then perform a targeted adjustment in the subsequent correction process according to the problem of different pattern groups, so as to achieve that all the patterns 201 to be corrected can finally obtain a corresponding adjustment.
In the present embodiment, the method of packet processing specifically refers to fig. 5 and fig. 6.
Referring to fig. 5, dividing the to-be-corrected graphs 201 with the same shape and size in the to-be-corrected layout 202 into the same group, and acquiring a plurality of initial graph groups; and performing exposure processing on the graph 201 to be corrected in each initial graph group to obtain a first exposure graph 204 corresponding to each graph 201 to be corrected.
Referring to fig. 6, a first edge position error of each of the first exposure patterns 204 is obtained; and dividing the first correction patterns 203 corresponding to the first exposure patterns 204 with the same first edge position error in each initial pattern group into the same group to obtain a plurality of pattern groups.
With continued reference to fig. 6, the method for obtaining the first edge position error of each of the first exposure patterns 204 includes: providing a target layout, wherein the target layout comprises a plurality of target graphs 205 corresponding to the graphs 201 to be corrected; setting a plurality of first sampling points on each target graph 205; setting a plurality of second sampling points corresponding to the first sampling points on each first exposure pattern 204; marking a plurality of first sampling points by using serial numbers of 1-N along a first direction X, wherein N is a natural number, N is more than or equal to 2, comparing the target graph 205 with the first exposure graph 204, obtaining a first difference value between each first sampling point and a corresponding second sampling point, adding the first difference values to obtain a first average value, and taking the first average value as a first edge position error of the first exposure graph.
In this embodiment, a simulation method is used to obtain the first exposure pattern 204 corresponding to the first correction pattern 203.
Referring to fig. 7, after the grouping process, a first optical proximity correction is performed on the pattern 201 to be corrected in each of the pattern groups several times to obtain a first corrected pattern 203.
In this embodiment, the first optical proximity correction is performed on the pattern to be corrected 201 several times to obtain the first corrected pattern 203 until the edges of the first exposed pattern corresponding to the first corrected pattern 203 are converged, so as to provide a basis for the subsequent correction processing, since each of the first corrected patterns 203 has a real edge position error after the first optical proximity correction is performed several times, the correction needs to be performed according to the edge position error of each of the first corrected patterns 203 in the subsequent correction processing.
Referring to fig. 8, after the first optical proximity correction, the first corrected pattern 203 in each pattern group is corrected to obtain a second corrected pattern 206.
In this embodiment, the correction process is used to improve the overlap ratio between the second exposed pattern obtained by exposing the second corrected pattern 206 and the transition section of the target pattern 205.
The correction processing method comprises the following steps: providing a plurality of correction values n, wherein the correction values n corresponding to each graph group are different; and performing correction processing on the first correction pattern 203 in each pattern group according to the correction value n.
Please refer to fig. 9 and 10 for a method of performing the correction process on the first corrected pattern 203 in each pattern group according to the correction value n.
Referring to fig. 9, the first corrected pattern 203 is corrected by the correction value n to obtain an intermediate pattern; and performing exposure processing on the intermediate patterns to obtain a second exposure pattern 207 corresponding to each intermediate pattern.
Referring to fig. 10, a second edge position error of each of the second exposure patterns 207 is obtained; providing a first threshold value c; comparing the first threshold c to the second edge position error; when the second edge position error is greater than the first threshold c, the correction value n is modified to reduce the difference between the second edge position error and the first threshold c until the second edge position b error is less than or equal to the first threshold c, and the second correction pattern 206 is obtained.
Referring to fig. 10, the method for obtaining the second edge position error of each of the second exposure patterns 207 includes: setting a plurality of third sampling points corresponding to the first sampling points on the second exposure pattern 207; comparing the target graph 205 with the second exposure graph 207, obtaining a second difference value between each first sampling point and a corresponding third sampling point, adding a plurality of second difference values, and then obtaining a second average value, wherein the second average value is used as a second edge position error of the second exposure graph 207.
In this embodiment, a second difference between each first sampling point and a corresponding third sampling point is obtained, a plurality of second differences are added to obtain a second average value, and the second average value is used as a second edge position error of the second exposure pattern 207. By using the second edge position error as a reference for the correction process, the second edge position error of the transition segment a of the second exposed pattern 207 and the target pattern 205 can be reduced, and the overlapping ratio of the transition segment a of the second exposed pattern 207 and the target pattern 205 can be effectively improved.
Referring to fig. 11, after the correction process, a third corrected pattern 208 is obtained by performing a plurality of second optical proximity corrections on each of the second corrected patterns 206.
In this embodiment, the second optical proximity correction is performed on each of the second corrected patterns 206 for several times to improve the overlapping ratio between the third exposed pattern obtained by exposing the third corrected pattern 208 and the edge segment of the target pattern 205, so as to improve the pattern effect of each to-be-corrected pattern 201 after optical proximity correction.
Please refer to fig. 12 and 13 for a method of obtaining the third corrected graph 208.
Referring to fig. 12, the second corrected patterns 206 in each of the pattern groups are exposed to obtain third exposed patterns 209 corresponding to each of the second corrected patterns 206.
Referring to fig. 13, a third edge position error a of each of the third exposure patterns 209 is obtained; providing a second threshold e; comparing the second threshold e to the third edge position error a; when the third edge position error a is greater than or equal to the second threshold e, performing a plurality of second optical proximity corrections on the second corrected graph 206 to reduce the difference between the third edge position error a and the second threshold e, and obtaining the third corrected graph 208 until the third edge position error a is less than or equal to the second threshold e.
Referring to fig. 13, the method for obtaining the third edge position error a of each of the third exposure patterns 209 includes: setting a plurality of fourth sampling points corresponding to the first sampling points on the third exposure pattern 209; comparing the target pattern 205 with the third exposure pattern 209, obtaining a third difference value between the 1 st or nth first sampling point and the corresponding fourth sampling point, and taking the third difference value as a third edge position error a of the third exposure pattern 209.
In this embodiment, a third difference between the 1 st or nth first sampling point and the corresponding fourth sampling point is obtained, and the third difference is used as a third edge position error a of the third exposure pattern. By using the third edge position error a as a reference for a plurality of second optical proximity corrections, the third edge position error a between the third exposure pattern 209 and the edge segment B of the target pattern 205 can be reduced, thereby effectively improving the coincidence ratio between the third exposure pattern 209 and the edge segment B of the target pattern 205.
Correspondingly, the invention also provides a manufacturing method of the mask, which comprises the following steps: providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected; grouping the layout to be corrected to obtain a plurality of graphic groups, wherein each graphic group comprises at least one graphic to be corrected; after the grouping processing, carrying out a plurality of times of first optical proximity correction on the graph to be corrected in each graph group to obtain a first corrected graph; after the first optical proximity correction, correcting the first corrected graph in each graph group to obtain a second corrected graph; after the correction processing, performing a plurality of times of second optical proximity correction on each second correction graph to obtain a third correction graph; and manufacturing a mask plate by using the third corrected graph.
Correspondingly, the invention also provides a method for forming the semiconductor structure, which comprises the following steps: providing a substrate, wherein the surface of the substrate is provided with a layer to be etched; providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected; grouping the layout to be corrected to obtain a plurality of graphic groups, wherein each graphic group comprises at least one graphic to be corrected; after the grouping processing, carrying out a plurality of times of first optical proximity correction on the graph to be corrected in each graph group to obtain a first corrected graph; after the first optical proximity correction, correcting the first corrected graph in each graph group to obtain a second corrected graph; after the correction processing, performing a plurality of times of second optical proximity correction on each second correction graph to obtain a third correction graph; and manufacturing a mask by using the third corrected graph, and performing a patterning process on the substrate by using the mask as a mask to form the semiconductor structure.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (12)
1. An optical proximity correction method, comprising: .
Providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected;
grouping the layout to be corrected to obtain a plurality of graphic groups, wherein each graphic group comprises at least one graphic to be corrected;
after the grouping processing, carrying out a plurality of times of first optical proximity correction on the graph to be corrected in each graph group to obtain a first corrected graph;
after the first optical proximity correction, correcting the first corrected graph in each graph group to obtain a second corrected graph;
and after the correction processing, carrying out a plurality of times of second optical proximity correction on each second correction pattern to obtain a third correction pattern.
2. The optical proximity correction method of claim 1, wherein the grouping processing method comprises: dividing the graphs to be corrected with the same shape and size in the layout to be corrected into the same group, and acquiring a plurality of initial graph groups; exposing the graph to be corrected in each initial graph group to obtain a first exposed graph corresponding to each graph to be corrected; and acquiring a first edge position error of each first exposure pattern, and dividing the patterns to be corrected corresponding to the first exposure patterns with the same first edge position error in each initial pattern group into the same group to acquire a plurality of pattern groups.
3. The optical proximity correction method according to claim 2, wherein the method of acquiring the first edge position error of each of the first exposure patterns comprises: providing a target layout, wherein the target layout comprises a plurality of target graphs corresponding to the graph to be corrected; setting a plurality of first sampling points on each target graph; setting a plurality of second sampling points corresponding to the first sampling points on each first exposure pattern; marking a plurality of first sampling points by using serial numbers of 1-N along a first direction, wherein N is a natural number and is more than or equal to 2; and comparing the target graph with the first exposure graph, acquiring a first difference value between each first sampling point and the corresponding second sampling point, adding a plurality of first difference values, and then calculating a first average value, wherein the first average value is used as a first edge position error of the first exposure graph.
4. The optical proximity correction method of claim 3, wherein the correction processing method comprises: providing a plurality of correction values, wherein the correction values corresponding to each graph group are different; and correcting the graphs to be corrected in each graph group according to the correction value.
5. The optical proximity correction method according to claim 4, wherein the method of performing correction processing on the first corrected pattern in each of the pattern groups based on the correction value comprises: correcting the first corrected graph through the correction value to obtain an intermediate graph; exposing the intermediate patterns to obtain second exposed patterns corresponding to each intermediate pattern; acquiring a second edge position error of each second exposure pattern; and correcting the intermediate graph according to the second edge position error.
6. The optical proximity correction method according to claim 5, wherein the method of acquiring the second edge position error of each of the second exposure patterns comprises: setting a plurality of third sampling points corresponding to the first sampling points on the second exposure pattern; and comparing the target graph with the second exposure graph, acquiring a second difference value between each first sampling point and a corresponding third sampling point, adding a plurality of second difference values, and then calculating a second average value, wherein the second average value is used as a second edge position error of the second exposure graph.
7. The optical proximity correction method according to claim 5, wherein the method of performing correction processing on the intermediate pattern according to the second edge position error includes: providing a first threshold; comparing the first threshold to the second edge position error; and when the second edge position error is larger than the first threshold, modifying the correction value to reduce the difference between the second edge position error and the first threshold until the second edge position error is smaller than or equal to the first threshold, and acquiring the second correction graph.
8. The optical proximity correction method of claim 3, wherein the method of obtaining the third correction pattern comprises: exposing the second corrected graphs in each graph group to obtain third exposed graphs corresponding to the second corrected graphs; acquiring a third edge position error of each third exposure pattern; and obtaining the third corrected graph according to the third edge position error.
9. The optical proximity correction method according to claim 8, wherein the method of acquiring the third edge position error of each of the third exposure patterns comprises: setting a plurality of fourth sampling points corresponding to the first sampling points on the third exposure pattern; and comparing the target graph with the third exposure graph, acquiring a third difference value between the 1 st or Nth first sampling point and a corresponding fourth sampling point, and taking the third difference value as a third edge position error of the third exposure graph.
10. The optical proximity correction method of claim 8, wherein the method of obtaining the third correction pattern based on the third edge position error comprises: providing a second threshold; comparing the second threshold to the third edge position error; and when the third edge position error is larger than the second threshold value, performing a plurality of times of second optical proximity corrections on the second corrected graph to reduce the difference between the third edge position error and the second threshold value, and obtaining a third corrected graph until the third edge position error is smaller than or equal to the second threshold value.
11. A manufacturing method of a mask is characterized by comprising the following steps: providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected; grouping the layout to be corrected to obtain a plurality of graphic groups, wherein each graphic group comprises at least one graphic to be corrected; after the grouping processing, carrying out a plurality of times of first optical proximity correction on the graph to be corrected in each graph group to obtain a first corrected graph; after the first optical proximity correction, correcting the first corrected graph in each graph group to obtain a second corrected graph; after the correction processing, performing a plurality of times of second optical proximity correction on each second correction graph to obtain a third correction graph; and manufacturing a mask plate by using the third corrected graph.
12. A method of forming a semiconductor structure, comprising: providing a substrate, wherein the surface of the substrate is provided with a layer to be etched; providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected; grouping the layout to be corrected to obtain a plurality of graphic groups, wherein each graphic group comprises at least one graphic to be corrected; after the grouping processing, carrying out a plurality of times of first optical proximity correction on the graph to be corrected in each graph group to obtain a first corrected graph; after the first optical proximity correction, correcting the first corrected graph in each graph group to obtain a second corrected graph; after the correction processing, performing a plurality of times of second optical proximity correction on each second correction graph to obtain a third correction graph; manufacturing a mask plate by using the third corrected graph; and carrying out a patterning process on the substrate by taking the mask plate as a mask to form the semiconductor structure.
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