CN112775539A - Laser processing method and apparatus - Google Patents
Laser processing method and apparatus Download PDFInfo
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- CN112775539A CN112775539A CN201911082658.0A CN201911082658A CN112775539A CN 112775539 A CN112775539 A CN 112775539A CN 201911082658 A CN201911082658 A CN 201911082658A CN 112775539 A CN112775539 A CN 112775539A
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- 238000003672 processing method Methods 0.000 title claims abstract description 16
- 238000005520 cutting process Methods 0.000 claims abstract description 128
- 239000002313 adhesive film Substances 0.000 claims abstract description 14
- 229910052594 sapphire Inorganic materials 0.000 claims description 39
- 239000010980 sapphire Substances 0.000 claims description 39
- 239000013078 crystal Substances 0.000 claims description 27
- 238000003384 imaging method Methods 0.000 claims description 18
- 230000010287 polarization Effects 0.000 claims description 10
- 238000003754 machining Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 238000005459 micromachining Methods 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 7
- 238000001914 filtration Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229940095676 wafer product Drugs 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/042—Automatically aligning the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention relates to the field of laser micromachining, and discloses a laser processing method, which comprises the steps of fitting a first end face of a sheet-shaped object to be processed on a transparent adhesive film fixed on a hard frame; fixing the hard frame on the processing platform, and arranging a second end face of the processed object, which is deviated from the first end face, opposite to the laser light source; cutting the processed object according to a preset cutting track by using laser with at least one focus generated by a laser light source so as to generate a plurality of cutting points on the processed object along the preset cutting track; when cutting the cutting point of the object to be processed, at least one focal point of the laser generated by the laser source acts on the second end surface. According to the laser processing method provided by the invention, the laser focus is controlled to act on the second end surface of the processed object, so that the straightness of each cut point is good, and the processing precision of the processed object is improved.
Description
Technical Field
The invention belongs to the field of laser micromachining, and particularly relates to a laser machining method and device.
Background
In the prior art, the processing of a sheet-like sapphire wafer adopts the following modes: a plurality of cutting points with similar distances are generated in the sapphire wafer through laser, cracks are formed among the cutting points, and the sapphire wafer is cut into a wafer product with a preset shape through subsequent process treatment.
However, since the sapphire wafer in a sheet shape is not a perfect plane, the laser incidence plane is not perfectly perpendicular to the incidence direction of the laser, resulting in poor straightness of a cut point generated inside the sapphire wafer, and thus, the processing accuracy of the wafer product cannot be ensured.
Disclosure of Invention
The invention aims to provide a laser processing method and a laser processing device, which are used for solving the problem that the processing precision can not be ensured due to poor straightness when a sheet-shaped sapphire wafer is processed in the prior art.
In order to achieve the purpose, the invention adopts the technical scheme that: provided is a laser processing method including:
bonding a first end face of a sheet-like object to be processed to a transparent adhesive film fixed to a rigid frame;
fixing the hard frame on a processing platform, wherein a second end face of the processed object, which is deviated from the first end face, is opposite to the laser light source; the laser light source is used for generating laser with at least one focus;
cutting the processed object according to a preset cutting track by using laser with at least one focus generated by the laser light source so as to generate a plurality of cutting points on the processed object along the preset cutting track; when the cutting point of the object to be processed is cut, at least one focal point of the laser generated by the laser light source acts on the second end face.
Optionally, the preset cutting track includes at least one linear cutting line, and the polarization direction of the laser is parallel to the cutting line.
Optionally, the object to be processed includes a sapphire crystal, and the cutting line is parallel to or perpendicular to a CH1 direction of the sapphire crystal.
Optionally, when the cutting lines are parallel to the CH1 direction of the sapphire crystal, the distance between adjacent cutting points is 4-8 μm;
when the cutting lines are perpendicular to the CH1 direction of the sapphire crystal, the distance between adjacent cutting points is 8-16 μm.
Optionally, the processing platform is a transparent stage.
Optionally, a first imaging device is disposed on a side of the processing platform opposite to the second end surface, and the first imaging device is configured to acquire a first image of the second end surface including the cut portion when the object to be processed is cut by the laser.
Optionally, a second imaging device is disposed on a side of the processing platform opposite to the first end surface, and the second imaging device is configured to acquire a second image of the first end surface including the cut portion when the object to be processed is cut by the laser.
Optionally, the rigid frame comprises a metal ring.
The invention also provides a laser processing device, which comprises a processing platform and a laser light source;
the processing platform is used for fixing the hard frame; a first end face of a sheet-like object to be processed is bonded to the transparent adhesive film fixed to the hard frame; a second end face of the object to be processed, which is far away from the first end face, is arranged opposite to the laser light source;
the laser light source is used for generating laser with at least one focus, when the laser light source is used for cutting the processed object, the laser with at least one focus generated by the laser light source cuts the processed object according to a preset cutting track, so that a plurality of cutting points are generated on the processed object along the preset cutting track; when the cutting point of the object to be processed is cut, at least one focal point of the laser generated by the laser light source acts on the second end face.
Optionally, the preset cutting track includes at least one linear cutting line, and the polarization direction of the laser is parallel to the cutting line;
the processed object comprises a sapphire crystal, and the cutting line is parallel to or perpendicular to the CH1 direction of the sapphire crystal.
The laser processing method provided by the invention has the beneficial effects that: compared with the prior art, at least one focus of laser generated by the laser light source is controlled to act on the second end face of the processed object, so that the straightness of each cut point is good, the pre-cracks formed on the cut points of the processed object are flush with the cutting lines in the preset cutting track, and the processing precision of the processed object is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic flow chart of a laser processing method according to an embodiment of the present invention;
fig. 2 is a schematic front view of a laser processing apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of each crystal face of the sapphire crystal of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
It will be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like, as used herein, refer to an orientation or positional relationship indicated in the drawings that is solely for the purpose of facilitating the description and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and is therefore not to be construed as limiting the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
As shown in fig. 1 and 2, a laser processing method according to an embodiment of the present invention will now be described. The laser processing method comprises the following steps:
s10, attaching the first end face of the sheet-like object 03 to be processed to the transparent adhesive film 042 fixed to the rigid frame 041;
s20, fixing the hard frame 041 on the processing platform 01, and arranging a second end face of the object 03 to be processed, which is away from the first end face, opposite to the laser light source 02; the laser light source 02 is used for generating laser light with at least one focus;
s30, cutting the object 03 to be processed according to a preset cutting track by using the laser beam with at least one focus generated by the laser light source 02, so as to generate a plurality of cutting points on the object 03 to be processed along the preset cutting track; when cutting the cutting point of the object 03, at least one focal point of the laser beam generated by the laser light source 02 acts on the second end face.
In this embodiment, the object 03 may be a sapphire substrate for manufacturing an LED chip, or another object to be cut that can be cut by laser, such as glass or a silicon wafer. Taking a sapphire substrate as an example, the object 03 may be in a sheet shape. The object 03 includes a first end surface and a second end surface, which are away from each other. The first end face is fitted on the transparent adhesive film 042 which has been fixed on the rigid frame 041. The rigid frame 041 refers to a structure that is not easily deformed, and allows the transparent adhesive film 042 to be completely spread out without wrinkles. This enables the object 03 to be processed to be more favorably attached to the transparent adhesive film 042.
When the object 03 is cut, the object 03 fixed to the transparent adhesive film 042 on the rigid frame 041 may be placed on the processing table 01. The laser light source 02 may be provided to face the second end face of the object 03. When the second end face of the object 03 faces upward, the laser light source 02 is disposed above the object 03. The laser light source 02 may generate laser light having at least one focal point.
The laser generated by the laser light source 02 can be used for cutting the object 03 to be processed according to a preset cutting track, so that a plurality of cutting points are generated on the object 03 to be processed along the preset cutting track. The cutting track can be set according to actual processing requirements, namely the preset cutting track. The preset cutting trajectory may be linear. The cutting points may be equidistant or approximately equidistant from each other. In particular, when forming the cutting point, at least one focal point of the laser acts on the second end face at the location of the cutting point. Other focal points of the laser beam can be set to act on the inside of the object 03 according to actual needs. If the thickness of the object 03 is small, the focal point of the laser light may act only on the second end face.
In this embodiment, since the focal point of the laser directly acts on the second end face of the object 03 to be processed, the deviation degree between the cutting point and the preset cutting position on the preset cutting track can be ensured to be within 2 μm.
Optionally, the preset cutting track includes at least one linear cutting line, and the polarization direction of the laser is parallel to the cutting line.
In this embodiment, the preset cutting track includes at least one linear cutting line. Here, the cutting line refers to a straight line formed by connecting a plurality of cutting points. If the preset cutting track comprises a plurality of cutting lines, the polarization direction of the laser is parallel to the cutting performance of the processed cutting point. The laser light generated by the laser light source 02 is linearly polarized light (may be a characteristic of the laser light source 02 itself, or may be formed by filtering an optical path). The polarization direction of the laser is parallel to the cutting line, so that the pre-crack formed on the cutting point is parallel to the cutting line when the laser is processed on the cutting point of the processed object 03.
Optionally, the object 03 to be processed includes a sapphire crystal, and the cutting line is parallel to or perpendicular to a CH1 direction of the sapphire crystal.
In this embodiment, sapphire is a crystal having a hexagonal structure and belonging to a trigonal system. As shown in FIG. 2, the facets that are commonly used include A-Plane (a Plane having a Plane index of (1120) in the sapphire crystal structure), C-Plane (a Plane having a Plane index of (0001) in the sapphire crystal structure, which is parallel to the surface of the sapphire substrate) and R-Plane (a Plane having a Plane index of (1012) in the sapphire crystal structure). Wherein the A-Plane is perpendicular to the C-Plane, i.e., the substrate surface, and the R-Plane is not perpendicular to the C-Plane, i.e., the substrate surface. The CH1 direction of the sapphire substrate is perpendicular to the c direction and parallel to the a-Plane. The CH2 direction of the sapphire substrate is perpendicular to the CH1 direction and parallel to the R-Plane. Here, the cutting line may be parallel to the CH1 direction, and may be parallel to the CH2 direction (i.e., perpendicular to the CH1 direction).
Because the cutting line is parallel to the lattice channels CH1/CH2 of the sapphire, uniform and gentle cracks are generated between adjacent cutting points, and the flatness of the edge of the processed object 03 is improved.
Optionally, when the cutting lines are parallel to the CH1 direction of the sapphire crystal, the distance between adjacent cutting points is 4-8 μm;
when the cutting lines are perpendicular to the CH1 direction of the sapphire crystal, the distance between adjacent cutting points is 8-16 μm.
In the present embodiment, when the cutting line is parallel to the CH1 direction of the sapphire crystal, the pitch between adjacent cutting points may be 4 to 8 μm. When the cutting lines are parallel to the CH2 direction of the sapphire crystal, the spacing between adjacent cutting points may be 8-16 μm. Since the sapphire crystal is easily subjected to the oblique fracture in the CH2 direction, the interval between adjacent cut points on the cut line parallel to the CH2 direction may be greater than the interval between adjacent cut points on the cut line parallel to the CH1 direction.
Optionally, the processing platform 01 is a transparent carrying platform.
In this embodiment, the processing platform 01 may be a transparent stage in order to facilitate observation of the processing quality of the object 03.
Optionally, a first imaging device 051 is arranged on one side, opposite to the second end face, of the processing platform 01, and the first imaging device 051 is used for acquiring a first image of the second end face including the cut part when the object 03 to be processed is cut by the laser.
In this embodiment, the first imaging device 051 may be disposed on the opposite side of the second end surface of the processing platform 01. The processing state of the object 03 to be processed can be observed by the first imaging device 051. The first imaging device 051 may obtain a first image of the second end face including the cut part.
Optionally, a second imaging device 052 is disposed on the machining table 01 at a side opposite to the first end surface, and the second imaging device 052 is configured to acquire a second image of the first end surface including the cut portion when the object 03 to be machined is cut by the laser beam.
In this embodiment, a second imaging device 052 may be provided on the opposite side of the processing platform 01 from the first end surface. The processing state of the object 03 to be processed can be observed by the second imaging device 052. The second imaging device 052 may obtain a second image of the first end surface including the cut portion. Here, the second imaging device 052 acquires a surface of the object 03 to be processed to which the transparent adhesive film 042 is adhered, and since the processing surface plate 01 is a transparent stage and the adhesive film is transparent, an image of the back surface (with respect to the laser light source 02) of the object 03, that is, a second image can be acquired by the second imaging device 052.
Optionally, the rigid frame 041 comprises a metal ring.
In this embodiment, the rigid frame 041 may be a ring structure, and may be made of a metal material, such as a metal ring. In particular, the rigid frame 041 may be an iron ring, a copper ring, or the like.
As shown in fig. 2, an embodiment of the present invention further provides a laser processing apparatus, which includes a processing platform 01 and a laser light source 02;
the processing platform 01 is used for fixing the hard frame 041; a first end surface of the sheet-like object 03 to be processed is attached to the transparent adhesive film 042 fixed to the rigid frame 041; a second end face of the object 03 to be processed, which is away from the first end face, is arranged opposite to the laser light source 02;
the laser light source 02 is used for generating laser with at least one focus, and when the laser light source 02 is used for cutting the object 03 to be processed, the laser with at least one focus generated by the laser light source 02 cuts the object 03 to be processed according to a preset cutting track, so that a plurality of cutting points are generated on the object 03 to be processed along the preset cutting track; when cutting the cutting point of the object 03, at least one focal point of the laser beam generated by the laser light source 02 acts on the second end face.
In this embodiment, the laser processing apparatus includes a processing platform 01 and a laser light source 02. The processing platform 01 is used for fixing the hard frame 041. The object 03 includes a first end surface and a second end surface facing away from each other. When the object 03 is processed, the first end surface of the sheet-like object 03 is bonded to the transparent adhesive film 042 fixed to the rigid frame 041. The second end face is opposed to the laser light source 02. The laser beam generated by the laser light source 02 enters the object 03 from the second end surface. The laser light source 02 may generate laser light having at least one focal point.
When the laser light source 02 is used for cutting the object 03 to be processed, the laser light generated by the laser light source 02 cuts the object 03 to be processed according to a preset cutting track, so that a plurality of cutting points are generated on the object 03 to be processed along the preset cutting track. At least one focal point of the laser is located on the second end face when cutting is performed for each cutting point.
Optionally, the preset cutting track includes at least one linear cutting line, and the polarization direction of the laser is parallel to the cutting line;
the object 03 to be processed includes a sapphire crystal, and the cutting line is parallel to or perpendicular to a CH1 direction of the sapphire crystal.
In this embodiment, the preset cutting track includes at least one linear cutting line. Here, the cutting line refers to a straight line formed by connecting a plurality of cutting points. If the preset cutting track comprises a plurality of cutting lines, the polarization direction of the laser is parallel to the cutting performance of the processed cutting point. The laser light generated by the laser light source 02 is linearly polarized light (may be a characteristic of the laser light source 02 itself, or may be formed by filtering an optical path). The polarization direction of the laser is parallel to the cutting line, so that the pre-crack formed on the cutting point is parallel to the cutting line when the laser is processed on the cutting point of the processed object 03.
The cut line may be parallel to the CH1 direction and may be parallel to the CH2 direction (i.e., perpendicular to the CH1 direction). Because the cutting line is parallel to the lattice channels CH1/CH2 of the sapphire, uniform and gentle cracks are generated between adjacent cutting points, and the flatness of the edge of the processed object 03 is improved.
For further limitations of the laser machining apparatus, reference may be made to the above limitations of the laser machining method, which are not described in detail here.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A laser processing method, comprising:
bonding a first end face of a sheet-like object to be processed to a transparent adhesive film fixed to a rigid frame;
fixing the hard frame on a processing platform, wherein a second end face of the processed object, which is deviated from the first end face, is opposite to the laser light source; the laser light source is used for generating laser with at least one focus;
cutting the processed object according to a preset cutting track by using laser with at least one focus generated by the laser light source so as to generate a plurality of cutting points on the processed object along the preset cutting track; when the cutting point of the object to be processed is cut, at least one focal point of the laser generated by the laser light source acts on the second end face.
2. The laser processing method of claim 1, wherein the predetermined cutting trajectory includes at least one linear cutting line, and the polarization direction of the laser light is parallel to the cutting line.
3. The laser processing method according to claim 2, wherein the object to be processed includes a sapphire crystal, and the cutting line is parallel or perpendicular to a CH1 direction of the sapphire crystal.
4. The laser processing method according to claim 3, wherein when the dicing lines are parallel to the CH1 direction of the sapphire crystal, a pitch between adjacent dicing points is 4 to 8 μm;
when the cutting lines are perpendicular to the CH1 direction of the sapphire crystal, the distance between adjacent cutting points is 8-16 μm.
5. The laser machining method of claim 1, wherein the machining platform is a transparent stage.
6. The laser processing method according to claim 1, wherein a first imaging device for acquiring a first image of the second end face including the portion to be cut when the object to be processed is cut by the laser is provided on a side of the processing stage opposite to the second end face.
7. The laser processing method according to claim 1, wherein a second imaging device for acquiring a second image of the first end face including the portion to be cut when the object to be processed is cut by the laser light is provided on a side of the processing stage opposite to the first end face.
8. The laser machining method of claim 1, wherein the rigid frame comprises a metal ring.
9. A laser processing device is characterized by comprising a processing platform and a laser light source;
the processing platform is used for fixing the hard frame; a first end face of a sheet-like object to be processed is bonded to the transparent adhesive film fixed to the hard frame; a second end face of the object to be processed, which is far away from the first end face, is arranged opposite to the laser light source;
the laser light source is used for generating laser with at least one focus, when the laser light source is used for cutting the processed object, the laser with at least one focus generated by the laser light source cuts the processed object according to a preset cutting track, so that a plurality of cutting points are generated on the processed object along the preset cutting track; when the cutting point of the object to be processed is cut, at least one focal point of the laser generated by the laser light source acts on the second end face.
10. The laser processing apparatus according to claim 9, wherein the predetermined cutting trajectory includes at least one linear cutting line, and the polarization direction of the laser light is parallel to the cutting line;
the processed object comprises a sapphire crystal, and the cutting line is parallel to or perpendicular to the CH1 direction of the sapphire crystal.
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CN114248003A (en) * | 2021-12-31 | 2022-03-29 | 普聚智能系统(苏州)有限公司 | Micro-part laser processing technique |
Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1190248A (en) * | 1996-12-18 | 1998-08-12 | 佳能株式会社 | Process for producing semiconductor article |
CN101100018A (en) * | 2006-07-03 | 2008-01-09 | 浜松光子学株式会社 | Laser processing method and chip |
CN101621024A (en) * | 2008-07-02 | 2010-01-06 | 楼氏电子(苏州)有限公司 | Wafer tipping machine and tipping method |
CN101835861A (en) * | 2007-12-10 | 2010-09-15 | Lg化学株式会社 | Adhesive film, dicing die bonding film and semiconductor device using the same |
CN102649199A (en) * | 2011-02-25 | 2012-08-29 | 三星钻石工业股份有限公司 | Substrate processing device and substrate processing method |
CN203390393U (en) * | 2013-05-10 | 2014-01-15 | 苏州图森激光有限公司 | Laser device used for wafer surface treatment |
CN104339088A (en) * | 2013-08-02 | 2015-02-11 | 罗芬-新纳技术公司 | System FOR PERFORMING LASER FILAMENTATION WITHIN TRANSPARENT MATERIALS |
CN104827191A (en) * | 2015-05-12 | 2015-08-12 | 大族激光科技产业集团股份有限公司 | Laser cutting method for sapphire |
CN105914267A (en) * | 2016-05-27 | 2016-08-31 | 山东浪潮华光光电子股份有限公司 | Method of preparing sapphire substrate LED chip through laser cutting |
CN106458693A (en) * | 2014-02-20 | 2017-02-22 | 康宁股份有限公司 | Methods and apparatus for cutting radii in flexible thin glass |
CN106493474A (en) * | 2016-12-19 | 2017-03-15 | 北京万恒镭特机电设备有限公司 | A kind of laser double-surface score device |
CN106536119A (en) * | 2014-07-09 | 2017-03-22 | 高质激光有限公司 | Processing of material using non-circular laser beams |
CN107452678A (en) * | 2016-05-13 | 2017-12-08 | 株式会社迪思科 | The processing method of chip |
CN107706150A (en) * | 2016-08-09 | 2018-02-16 | 株式会社迪思科 | The processing method of chip |
CN108406096A (en) * | 2018-03-22 | 2018-08-17 | 大族激光科技产业集团股份有限公司 | laser calibration method, processing method and device |
CN108788451A (en) * | 2018-09-10 | 2018-11-13 | 杭州银湖激光科技有限公司 | A kind of processing method and device of ultrafast laser transparent material |
CN110039205A (en) * | 2019-04-30 | 2019-07-23 | 大族激光科技产业集团股份有限公司 | The processing method of LED wafer |
-
2019
- 2019-11-07 CN CN201911082658.0A patent/CN112775539A/en active Pending
Patent Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1190248A (en) * | 1996-12-18 | 1998-08-12 | 佳能株式会社 | Process for producing semiconductor article |
CN101100018A (en) * | 2006-07-03 | 2008-01-09 | 浜松光子学株式会社 | Laser processing method and chip |
CN101835861A (en) * | 2007-12-10 | 2010-09-15 | Lg化学株式会社 | Adhesive film, dicing die bonding film and semiconductor device using the same |
CN101621024A (en) * | 2008-07-02 | 2010-01-06 | 楼氏电子(苏州)有限公司 | Wafer tipping machine and tipping method |
CN102649199A (en) * | 2011-02-25 | 2012-08-29 | 三星钻石工业股份有限公司 | Substrate processing device and substrate processing method |
CN203390393U (en) * | 2013-05-10 | 2014-01-15 | 苏州图森激光有限公司 | Laser device used for wafer surface treatment |
CN104339088A (en) * | 2013-08-02 | 2015-02-11 | 罗芬-新纳技术公司 | System FOR PERFORMING LASER FILAMENTATION WITHIN TRANSPARENT MATERIALS |
CN106458693A (en) * | 2014-02-20 | 2017-02-22 | 康宁股份有限公司 | Methods and apparatus for cutting radii in flexible thin glass |
CN106536119A (en) * | 2014-07-09 | 2017-03-22 | 高质激光有限公司 | Processing of material using non-circular laser beams |
US20170151632A1 (en) * | 2015-05-12 | 2017-06-01 | Han's Laser Technology Industry Group Co., Ltd. | Laser processing method, apparatus for sapphire and storage medium |
CN104827191A (en) * | 2015-05-12 | 2015-08-12 | 大族激光科技产业集团股份有限公司 | Laser cutting method for sapphire |
CN107452678A (en) * | 2016-05-13 | 2017-12-08 | 株式会社迪思科 | The processing method of chip |
CN105914267A (en) * | 2016-05-27 | 2016-08-31 | 山东浪潮华光光电子股份有限公司 | Method of preparing sapphire substrate LED chip through laser cutting |
CN107706150A (en) * | 2016-08-09 | 2018-02-16 | 株式会社迪思科 | The processing method of chip |
CN106493474A (en) * | 2016-12-19 | 2017-03-15 | 北京万恒镭特机电设备有限公司 | A kind of laser double-surface score device |
CN108406096A (en) * | 2018-03-22 | 2018-08-17 | 大族激光科技产业集团股份有限公司 | laser calibration method, processing method and device |
CN108788451A (en) * | 2018-09-10 | 2018-11-13 | 杭州银湖激光科技有限公司 | A kind of processing method and device of ultrafast laser transparent material |
CN110039205A (en) * | 2019-04-30 | 2019-07-23 | 大族激光科技产业集团股份有限公司 | The processing method of LED wafer |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114248003A (en) * | 2021-12-31 | 2022-03-29 | 普聚智能系统(苏州)有限公司 | Micro-part laser processing technique |
CN114248003B (en) * | 2021-12-31 | 2024-01-16 | 普聚智能系统(苏州)有限公司 | Micro part laser processing technique |
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