CN112768909A - Back cavity circularly polarized patch antenna array with filtering function - Google Patents
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Abstract
The invention relates to a cavity-backed circularly polarized patch antenna array with a filtering function. The invention carries out the integrated design of the antenna and the filter in the single-layer single-substrate integrated waveguide cavity and passes through the TM introduced into the resonant cavity120、TM210And TM of microstrip patch10、TM01The mode enables a wider impedance bandwidth. However, the axial ratio bandwidth is much narrower than the impedance bandwidth. Therefore, in order to further widen the effective operating bandwidth of the antenna, the present invention performs an array design. By means of a rotary sequential feed mode and introduction of a second-order high-pass filter on the dielectric integrated waveguide, the axial ratio bandwidth of the antenna is widened, the antenna gain is improved, and meanwhile the filtering effect of the antenna is further optimized.
Description
Technical Field
The invention belongs to the technical field of antennas of wireless communication terminals, and relates to a cavity-backed patch circularly polarized antenna array with a filtering function, which can be used as an antenna at the radio frequency front end of a miniaturized wireless transceiver and is widely applied to wireless communication systems such as mobile communication, satellite communication, radar and the like.
Background
It is known that array antennas can be used to increase the gain of the antenna, and for circularly polarized antennas, the array mode using the rotation sequence feeding can effectively extend the axial ratio bandwidth. The circularly polarized patch antenna has a very wide application prospect in modern communication systems due to the remarkable advantages of light weight, small volume, low profile, easy integration, capability of resisting multipath interference and the like. However, the axial ratio bandwidth of such antennas is generally narrow, typically not more than 3%. Therefore, the circular polarization patch antenna is arrayed in a rotating sequence feeding mode, so that the shortage of the bandwidth can be effectively compensated. The filter antenna is a multifunctional device which is formed by integrally designing a filter and an antenna and is emerging in recent years. The filter antenna is paid attention to by researchers due to the advantages of compact structure, low loss, high efficiency and the like, and the filter antenna is rapidly developed in recent years. However, the filter antenna is more complex than a single antenna structure, which can be a great challenge for the construction of an array antenna. At present, there are three design methods for a filtering antenna: direct integration, built-in filter into the feed network of the antenna, co-design of the filter with the radiator of the antenna. The first two methods have a relatively large space occupation ratio compared with the third method, and thus the first two methods are more challenging to design for the array antenna. In fact, most of the elements used in the current filtering antenna array are based on the third filtering antenna element design method. In these only filter antenna array designs, almost all the attention is focused on the linear polarization filter antenna array, so that the research related to the circular polarization filter antenna array is still blank. It has been mentioned above that the circular polarized filter antenna array with high gain and wide bandwidth has a very wide application prospect in modern communication systems. Therefore, in this situation, it is very meaningful to perform research related to the circular polarized filter antenna array.
In summary, in order to obtain a multifunctional electromagnetic wave transceiver with wide bandwidth, high gain and a filtering function, the invention provides a cavity-backed circular polarized patch antenna array with a filtering function. The invention endows the antenna with the characteristics of filtering and circular polarization by combining a plurality of modes of the resonant cavity and the microstrip patch. And then, the array design is carried out on the basis, so that the gain and the bandwidth of the antenna are obviously improved.
Disclosure of Invention
The invention aims to provide a cavity-backed circularly polarized patch antenna array with a filtering function, and particularly provides a 2 x 2 antenna array formed by integrally designing an antenna and a filter in a single-layer substrate integrated waveguide cavity and then feeding the filtering antenna units in a rotating sequence. The antenna unit adopted by the invention has a simple structure, and only uses a single-layer dielectric substrate and a single substrate integrated waveguide resonant cavity. In addition, the feed network provided by the invention not only can meet 90-degree phase shift required by circular polarization, but also has the characteristic of a high-pass filter, so that the filtering effect of antenna gain at a low frequency position is optimized while the axial ratio bandwidth is expanded.
The technical solution for realizing the purpose of the invention is as follows:
the back cavity circularly polarized patch antenna array with the filtering function sequentially comprises a lower metal surface M1, a lower dielectric substrate S1, a middle metal surface M2, an upper dielectric substrate S2 and an upper metal surface M3 from bottom to top.
A cross-shaped power divider composed of a dielectric integrated waveguide (SIW) is arranged in the lower dielectric substrate S1; the cross-shaped power divider consists of 4 filter structures F1-F4 and 4 rectangular waveguides W1-W4 with different lengths, wherein W2 is longer than W1, W3 is longer than W2, W4 is longer than W3, the length difference is the same, and the wavelength of the medium is one eighth; 4 rectangular waveguides W1-W4 with different lengths are close to the center of the power divider to form a cross shape; 4 filter structures F1-F4 are respectively arranged outside the rectangular waveguides W1-W4.
The center of the power divider is superposed with the center of the dielectric substrate S1, and a hollow cylinder FW is arranged at the center. A row of metal column arrays Fc penetrating through the dielectric substrate S1 extend towards the center at the junctions of the 4 rectangular waveguides W1-W4.
The metal column array Fc is formed by a plurality of metal columns with the same size at equal intervals; the metal pillar array F1 makes an angle of 45 ° with the rectangular waveguide.
The upper dielectric substrate S2 is internally provided with 4 SIW cavities Ca1-Ca4, and the boundaries of two adjacent SIW cavities are overlapped, namely every two SIW cavities share a row of metal through hole walls. The 4 SIW cavities Ca1-Ca4 form a Chinese character 'tian' shape, and the center of the Chinese character 'tian' shape is superposed with the center of the upper dielectric substrate S2. The four SIW cavities Ca1-Ca4 resonate in TE120/TE210Modes for broadening the in-band bandwidth. In addition, TE can be excited in the cavity110Mode and TE220The radiation waves generated by the two modes are offset in space, so that two radiation zeros are realized out of band, and the filtering characteristic is realized.
And a notch is formed in one corner of each SIW cavity far away from the center, and the notch is outwards connected with a rectangular waveguide W5-W8 with unequal length consisting of SIWs. Wherein W6 is longer than W5, W7 is longer than W6, W8 is longer than W7, and the length difference is the same and is one eighth of the medium wavelength. The W1-W8 jointly form a sequential rotation feed network, so that the energy fed into the antenna units connected from W5 to W8 is sequentially decreased by 90 degrees, and the axial ratio bandwidth is expanded. The outer sides of the 4 rectangular waveguides W5-W8 are respectively connected with a filtering structure F5-F8 consisting of SIW.
Preferably, the 4 cavities Ca1-Ca4 are cubes and have the same size, and a pair of arc-shaped structures V1 and V2, which are composed of one or more metal through holes, are oppositely arranged in the cavities. The arc structure is used for realizing degenerate mode TE120/TE210Separate, separated TE120Mode and TE210The mode may be used to achieve circular polarization.
Preferably, the upper and lower dielectric substrates S1 and S2 have the same size and overlap each other at the center.
The SIW cavity Ca1-Ca4, the SIW rectangular waveguide W1-W8 and the SIW filter structure F1-F8 are all composed of a metalized through hole array, a dielectric substrate and upper and lower metal surfaces which are distributed periodically.
The filter structures F5-F8 in the dielectric substrate S1 are positioned right below the filter structures F1-F4 in the dielectric substrate S2, and the rectangular waveguides W5-W8 are positioned right below the rectangular waveguides W1-W4 in the dielectric substrate S2.
Preferably, the filter structures F1-F8 have the same size and the same width as the rectangular waveguides W1-W8.
The centers of the arc structures V1 and V2 in each SIW cavity Ca1-Ca4 and the center of the cavity in which the arc structures are positioned on the same straight line.
Preferably, the arcuate structures V1, V2 are immediately adjacent the sides of the cavity.
Preferably, the arcuate structure V1 is located proximate to the gap of the SIW cavity.
Preferably, the filter structures F1-F4 are the same width as the filter structures F5-F8.
Preferably, the rectangular waveguides W1-W4 correspond to the rectangular waveguides W5-W8 one by one, and the width and the length of the corresponding rectangular waveguides are the same.
Preferably, the positions of the junctions of the filter structures F1-F4 and the rectangular waveguides W1-W4 and the junctions of the filter structures F5-F8 and the rectangular waveguides W5-W8 are the same.
Preferably, the rectangular waveguides W1 to W4 are sequentially increasing in length.
The lower metal surface M1 is located on the lower surface of the lower dielectric substrate S1, and a circular hole with the same caliber as the hollow cylinder FV at the center of the lower dielectric substrate S1 is formed in the center of the lower metal surface M1.
The middle layer metal surface M2 is positioned between the upper layer medium substrate S1 and the lower layer medium substrate S2, and 4 rectangular gaps St1-St4 are etched at the position, far away from the center, of the middle layer metal surface M2; rectangular slots St1-St4 are located at the junction of the above-described filter structures F1-F4 and rectangular waveguides W1-W4.
Preferably, the 4 rectangular slits St1-St4 are all the same size.
Preferably, the long sides of the 4 rectangular slots St1-St4 are axisymmetric with respect to the center line of the rectangular waveguide.
The upper metal surface M3 is positioned on the upper surface of the upper dielectric substrate S2; four annular hollow radiation holes A1-A4 are carved at the position, close to the center, of the upper-layer metal surface M3, namely right above the 4 SIW cavities Ca1-Ca 4; each radiating hole is internally provided with a metal patch P1-P4 with a cut edge; and 4 rectangular gaps Sf1-Sf4 are arranged around each radiating hole and are used for additionally introducing a radiating zero point in the high-frequency region, so that the out-of-band rejection level of the high-frequency region is improved.
Preferably, the radiation holes A1-A4 and the metal patches P1-P4 are all square.
Preferably, the radiating holes A1-A4 and the metal patches P1-P4 are coincident with the centers of the SIW cavities respectively in which the radiating holes are located, and the four sides of the radiating holes are parallel.
Preferably, the 4 rectangular slits Sf1-Sf4 surrounding the radiating hole are identical in size and parallel to the four sides of the radiating hole.
Preferably, the edge-cutting metal patches P1-P4 are of a square structure with notches on two opposite sides.
Preferably, the two gaps of the metal patch P1-P4 and the centers of the metal patches P1-P4 are positioned on the same straight line.
The working process is as follows:
substrate integrated waveguide square cavity Ca1-Ca4 working in TM120/TM210In the mode, the arc structures V1 and V2 can make TM in the resonant cavity C by means of perturbation120Mode and TM210The mold separates. TM120Mode and TM210When the modes simultaneously excite the radiation holes A1-A4, the radiation polarizations generated by the modes are orthogonal, and when the sizes of the arc structures V1 and V2 are properly selected, a phase difference of 90 degrees exists between the two orthogonally polarized radiation waves, and then the circularly polarized waves are generated. The notches on the pair of opposite sides of the metal patches P1-P4 make the TM degenerate originally10/TM20The mold separates. TM when microstrip antenna is separated10/TM20TM with mold separated near square cavity120/TM210The mode, the impedance bandwidth and the axial ratio bandwidth can be obviously improved. TM of square cavity110The mode is a central rotationally symmetric mode, and the energy radiated through the radiation hole is cancelled in space, thereby introducing a gain zero in the low frequency region. Same principle, TM of high-frequency region of square cavity220Mode generation also occurs in the high frequency regionA radiation zero. In addition, a radiation zero is also introduced near the boundary of the high frequency operating band due to the coupling effect between the radiation hole and the metal patch. The other 4 slots surrounding the four sides of the radiation hole can generate a radiation zero point at higher frequency due to the same radiation cancellation principle.
The rectangular waveguides in the upper and lower dielectric substrates are unequal in length, and the lengths of the rectangular waveguides are sequentially increased by one eighth of the waveguide wavelength (calculated by 10 GHz) from W1 to W4 and W5 to W8. This means that the phases of the energy entering the cavities Ca1-Ca4 are sequentially different by a quarter wavelength with the cavity Ca1 as a reference point, and the arrangement of the adjacent antenna elements is orthogonal, so that the linearly polarized wave is adjusted to be a circularly polarized wave, and the axial ratio bandwidth is expanded. Furthermore, the distance from the short end of the filter structure F1-F8 to the transmission slots St1-St4 is a quarter of the waveguide wavelength (calculated at 8 GHz), so that near 8GHz the current distribution at the transmission slots St1-St4 will be almost zero and energy cannot be transmitted up through the slots. In addition, the cut-off frequency of the rectangular waveguide is set in the vicinity of 6.5GHz, and the cut-off frequency in combination with the transmission zero point will produce a low-pass filter transmission characteristic. Therefore, the upper and lower layers of filter structures and the transmission gap can be regarded as a second-order high-pass filter structure. The filtering effect of the antenna array low frequencies is thereby significantly improved.
Compared with the prior art, the invention has the following remarkable advantages:
1) the filter has the following good filter characteristics: the interference signals of low frequencies can be totally suppressed, and the high frequencies have three gain zeros, which enables the antenna to have excellent filtering characteristics at high frequencies.
2) The structure is simple: the antenna unit is a single-layer single-cavity planar structure, and compared with a multi-layer or multi-cavity design in the existing design, the structure of the antenna unit is greatly simplified; the array has simple structure, easy processing and low manufacturing cost, and the size and the section of the array are smaller than those of most of the existing cavity filter antennas.
3) Low loss antenna array: the invention relates to a circularly polarized filter antenna array which is designed based on SIW and can be used for a millimeter wave frequency band. The loss of the filter antenna array based on the microstrip technology in the millimeter wave frequency band will become larger, and the filter antenna array based on the microstrip technology still has the advantage of low loss in the millimeter wave frequency band.
4) Circular polarization filter characteristics: in an overview of the existing literature, the design of a circular polarized filter antenna array based on SIW is rarely published.
5) Wide bandwidth: the bandwidth is widened by using four modes in total of the resonant cavity and the microstrip patch.
6) High gain: the cavity-backed structure can improve the gain by suppressing surface waves, and on the basis of the cavity-backed structure, the array structure further improves the gain.
Drawings
FIG. 1 is an exploded perspective view of the present invention;
FIG. 2 is a schematic structural diagram of the lower dielectric substrate S1 and the upper metal layer M2 according to the present invention;
FIG. 3 is a schematic structural diagram of an upper metal plane M3 and a lower dielectric substrate S1 according to the present invention;
FIG. 4 is a schematic exploded perspective view of a second order high pass filter according to the present invention;
FIG. 5 is an exploded perspective view of the filtering antenna unit of the present invention;
fig. 6 is a top view of the upper metal plane of the filtering antenna unit of the present invention;
FIG. 7 is a graph of the transmission characteristics of a second order high pass filter of the present invention;
FIG. 8 is a simulation of the S-parameter curve of the present invention;
FIG. 9 is a graph of an axial ratio curve simulation of the present invention;
FIG. 10 is a simulation of the gain curve of the present invention;
FIG. 11 is a simulation of the radiation pattern of the present invention at 9.1GHz in the right-hand circular polarization operating state;
FIG. 12 is a simulated plot of the radiation pattern of the present invention at 10.0GHz in the right-hand circularly polarized operating state;
fig. 13 is a simulation of the radiation pattern of the present invention at 10.9GHz in the right-hand circularly polarized operating state.
Detailed Description
The present invention is further analyzed with reference to the following specific examples.
With reference to fig. 1, fig. 2, and fig. 3, the cavity-backed circular polarized patch antenna array with a filtering function includes two layers of Rogers5880 dielectric substrates S1 and S2 with a thickness of 1.575mm, and a lower metal plane M1, a middle metal plane M2, and an upper metal plane M3 which are the same in size as the dielectric substrates.
4 substrate integrated waveguide cavities Ca1-Ca4 which are adjacent and have the side length of 23mm and are surrounded by metallized through holes are surrounded in the dielectric substrate S2. The diameter of the metallized through hole is 1mm, which is less than one tenth of the wavelength of the air corresponding to the working center frequency of the antenna. The distance between the centers of two adjacent metallized through holes is 1.5 mm. One corner of the cavity was cut away with a gap length of 12.9 m. The cavities Ca1-Ca4 are internally provided with arc structures V1 and V2 which are oppositely arranged. The arc structures V1, V2 are offset from the notches by 45 DEG clockwise. The V1 and V2 are composed of three metal columns, wherein the central metal column is in a straight line with the center of the cavity, the distance from the central metal column to the side of the adjacent cavity is 2.3mm, the metal columns on two sides are offset from the central metal column by 1.6mm, and the distance from the metal columns to the side of the adjacent cavity is 1.5 mm. The rectangular waveguides W5-W8 are connected with the unfilled corner openings of the substrate integrated waveguide cavity and extend outwards for a certain distance. The rectangular waveguides W5-W8 have a width of 16.7mm and successively increasing lengths in increments of 3.6 mm. At the ends of the rectangular waveguides W5-W8, on the middle metal plane M1, there are transmission gaps St1-St4 each having a length of 8.6mm and a width of 0.8mm, wherein St1 is 30mm from the center of the dielectric substrate. A rectangular filter structure extends from the transmission slot St1-St4, has the same width as the rectangular waveguide, and has a length of 11 mm. Below the transmission slot St1-St4, i.e. in the dielectric substrate S1, there is also a filter structure F1-F4 and a rectangular waveguide W1-W4 in an orientation corresponding to the filter structure F5-F8 and the rectangular waveguide W5-W8. The sizes of the filter structures F1-F4 are completely the same as those of the filter structures F5-F8, and the rectangular waveguides W1-W4 are similar to the rectangular waveguides W5-W8, the widths of the rectangular waveguides W1-W4 are the same, and the lengths of the rectangular waveguides W5-W8 are increased by 3.6mm in sequence. Four metal through hole walls with equal length extend from four junctions of the rectangular waveguides W1-W4 to the center of the dielectric substrate. The distance from the wall of the metal through hole to the center of the dielectric substrate is 7.2 mm.
As shown in fig. 2, a square ring-shaped gap P2 with a gap of 2mm is carved at the center of the upper metal surface M1, a group of square patches P1 with 0.9mm square side cut from opposite sides are arranged inside the gap P2, and the side of each square patch P1 is 8.1 mm. The annular slot P2 and the microstrip patch P1 are rotated by 45 ° with respect to the dielectric substrate S and coincide with the center of the dielectric substrate S. Two rectangular slots S1 and S2 which are rotationally symmetrical about the center of the dielectric substrate are further engraved on the upper metal surface, the length of each slot is 5.3mm, the width of each slot is 1mm, and the distance between each slot and the edge of the substrate integrated waveguide cavity is 1.5 mm. The rectangular slots S1, S2 are parallel to a set of uncut sides of the microstrip patch P1 and are symmetrical with respect to two diagonal lines of the dielectric substrate.
FIG. 4 is a schematic exploded perspective view of a second order high pass filter according to the present invention;
as shown in fig. 3, 5 and 6, four square apertures a1-a4 with the side length of 11.8mm are hollowed out on the upper metal surface M3. Inside the square aperture, there are rectangular patches P1-P4 each having a side of 7.9mm in length. A set of opposing sides of the rectangular patches P1-P4 each have a notch with a side length of 0.7 mm. The square apertures a1-a4 each surrounded 4 filter slots of 5.9mm length and 1mm width. The distance of the filter slit to the center of the square aperture is 7.4 mm. The square apertures A1-A4 and the metal patches P1-P4 are coincident with the centers of the SIW cavities respectively, and the four sides of the SIW cavities are parallel. The filter slits are parallel to the four sides of the respective square aperture.
The specific structural geometric parameters are as follows:
wherein h is the thickness of the dielectric substrate, WcFor integrating the side length, W, of the waveguide cavity in the substratewGap length, W, at the corners of a substrate integrated waveguide cavitygThe width of the substrate integrated rectangular waveguide connected with the substrate integrated waveguide cavity is d, the diameter of the metalized holes forming the substrate integrated waveguide is d, and the hole distance between adjacent metalized holes is dp，dpxIs the distance from the central metal column to the side length of the adjacent cavity in the arc-shaped structure, dpx1The distance between the metal columns on the two sides of the central metal column in the arc-shaped structure and the side length of the adjacent cavity, dpy1The distance L of the metal columns at the two sides of the central metal column in the arc-shaped structure deviating from the central metal columnfIs the length of the filter structure, LpIs the side length of the microstrip patch, LaLength of side of radiation hole, /)pcFor the microstrip patch to be cut off at two opposite sidesSide length of square slice, LsAnd WsThe length and width of 4 rectangular gaps surrounding the radiation aperture on the upper metal surface, dsThe distance L from the gap to the center of the substrate integrated waveguide cavitystAnd WstThe length and width of 4 transmission gaps on the middle metal surface, Lb1-Lb4The distance from the gap to the center of the medium substrate.
Fig. 7 is a transmission curve of the proposed second order high pass filter, and it can be seen that this structure achieves good rejection at low frequencies, with | S in the desired operating band11|<-15 dB. Fig. 8 to 13 are simulation results of the cavity-backed circularly polarized patch antenna array with the filtering function. As can be seen from FIG. 8, the-10 dB | S of the antenna11The | is 21.6%. As can be seen from fig. 9, the 3dB axial ratio bandwidth of the antenna is 18.8%. As can be seen from fig. 10, the highest gain of the antenna is 13.1dBic, and a significant fast roll-off and a good out-of-band rejection effect can be seen in both operating frequency bands. Fig. 10-13 show that the antenna has stable and good directional radiation in the whole operating frequency band.
Claims (10)
1. The back cavity circularly polarized patch antenna array with the filtering function can be applied to a millimeter wave frequency band, and is characterized by sequentially comprising a lower metal surface M1, a lower dielectric substrate S1, a middle metal surface M2, an upper dielectric substrate S2 and an upper metal surface M3 from bottom to top;
a cross-shaped power divider composed of a dielectric integrated waveguide SIW is arranged in the lower dielectric substrate S1; the cross-shaped power distribution distributor consists of 4 filter structures F1-F4 and 4 rectangular waveguides W1-W4 with unequal lengths, wherein the 4 rectangular waveguides W1-W4 with unequal lengths are close to the center of the power distribution distributor to form a cross shape; 4 filter structures F1-F4 are respectively arranged outside the rectangular waveguides W1-W4;
the center of the power divider is superposed with the center of the dielectric substrate S1, and a hollow cylinder FW is arranged at the center; a row of metal column arrays Fc penetrating through the dielectric substrate S1 extend towards the center at the junctions of the 4 rectangular waveguides W1-W4;
4 SIW cavities Ca1-Ca4 are arranged in the upper-layer dielectric substrate S2, and the boundaries of two adjacent SIW cavities are overlapped, namely every two adjacent SIW cavities share a row of metal through hole walls; the 4 SIW cavities Ca1-Ca4 form a Chinese character tian shape, and the centers of the SIW cavities are superposed with the center of the upper-layer dielectric substrate S2; the four SIW cavities Ca1-Ca4 resonate in TE120/TE210A mode for broadening an in-band bandwidth; in addition, TE can be excited in the cavity110Mode and TE220The radiation waves generated by the two modes are offset in space, so that two radiation zero points are realized out of band, and the filtering characteristic is realized;
a notch is formed in one corner of each SIW cavity, which is far away from the center, and the notch is outwards connected with an unequal-length rectangular waveguide W5-W8 consisting of SIWs; the outer sides of the 4 rectangular waveguides W5-W8 are respectively connected with a filtering structure F5-F8 consisting of SIW;
the 4 cavities Ca1-Ca4 are cubes and have the same size, and a pair of arc structures V1 and V2 consisting of one or more than one metal through holes are oppositely arranged in the cavities; the arc structure is used for realizing degenerate mode TE120/TE210Separate, separated TE120Mode and TE210Modes can be used to achieve circular polarization;
the lower metal surface M1 is positioned on the lower surface of the lower dielectric substrate S1, and the center of the lower metal surface M1 is provided with a round hole with the same caliber as the hollow cylinder FV at the center of the lower dielectric substrate S1;
the middle layer metal surface M2 is positioned between the upper layer medium substrate S1 and the lower layer medium substrate S2, and 4 rectangular gaps St1-St4 are etched at the position, far away from the center, of the middle layer metal surface M2; the rectangular gaps St1-St4 are positioned at the junctions of the filter structures F1-F4 and the rectangular waveguides W1-W4;
the upper metal surface M3 is positioned on the upper surface of the upper dielectric substrate S2; four annular hollow radiation holes A1-A4 are carved at the position, close to the center, of the upper-layer metal surface M3, namely right above the 4 SIW cavities Ca1-Ca 4; each radiating hole is internally provided with a metal patch P1-P4 with a cut edge; and 4 rectangular gaps Sf1-Sf4 are arranged around each radiating hole and are used for additionally introducing a radiating zero point in the high-frequency region, so that the out-of-band rejection level of the high-frequency region is improved.
2. The array of cavity-backed circularly polarized patch antennas of claim 1, wherein the array of metal pillars Fc is formed by a plurality of metal pillars with identical size and being equally spaced; the metal pillar array F1 makes an angle of 45 ° with the rectangular waveguide.
3. The array of claim 1, wherein the lengths of the 4 rectangular waveguides W1-W4 of the cross-shaped power divider are sequentially increased by one eighth of the wavelength of the medium; the lengths of 4 rectangular waveguides W5-W8 circumscribed by the SIW cavity Ca1-Ca4 are sequentially increased in an increasing mode, and the increment is one eighth of the wavelength of a medium; the W1-W8 jointly form a sequential rotation feed network, so that the energy fed into the antenna units connected from W5 to W8 is sequentially decreased by 90 degrees, and the axial ratio bandwidth is expanded.
4. The array of claim 1, wherein the dielectric substrates S1 and S2 of the upper and lower layers have the same size and the same center.
5. The array of claim 1, wherein the SIW cavity Ca1-Ca4, the SIW rectangular waveguide W1-W8, and the SIW filter structure F1-F8 are each formed by a metalized via array, a dielectric substrate, and upper and lower metal planes, which are periodically distributed.
6. The cavity-backed circular polarized patch antenna array with the filtering function as claimed in claim 1, wherein the filtering structures F5-F8 in the dielectric substrate S1 are located right below the filtering structures F1-F4 in the dielectric substrate S2, and the rectangular waveguides W5-W8 are located right below the rectangular waveguides W1-W4 in the dielectric substrate S2; the filter structures F1-F8 are all the same size and have the same width as the rectangular waveguides W1-W8.
7. The array of claim 1, wherein the centers of the arc structures V1 and V2 in the SIW cavities Ca1-Ca4 are located on the same straight line with the center of the cavity; the arc structures V1 and V2 are close to the edge of the cavity; the arcuate structure V1 is located proximate to the gap of the SIW chamber.
8. The array of claim 1, wherein the radiating holes a1-a4, the metal patches P1-P4 are coincident with the centers of the SIW cavities, and the four sides are parallel; the 4 rectangular slits Sf1-Sf4 surrounding the radiating hole are all the same size and parallel to the four sides of the radiating hole.
9. The array of claim 1, wherein the metal patches P1-P4 are square structures with a notch on each of two opposite sides; the two gaps of the metal patches P1-P4 are positioned on the same straight line with the centers of the metal patches P1-P4.
10. The cavity-backed circularly polarized patch antenna array with filtering function as claimed in claim 1, wherein a set of filtering structures F1 and F5, F2 and F6, F3 and F7, F4 and F8 and corresponding transmission slots St1-St4 in the upper and lower dielectric substrates each constitute a second-order high-pass filter; the distance from the short-circuited end of the filter structure F1-F8 to the transmission slot St1-St4 is a quarter of a waveguide wavelength.
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