CN111446151A - Method for transferring crystal grains to blue film in batches after crystal grains are cut - Google Patents
Method for transferring crystal grains to blue film in batches after crystal grains are cut Download PDFInfo
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- CN111446151A CN111446151A CN202010230834.7A CN202010230834A CN111446151A CN 111446151 A CN111446151 A CN 111446151A CN 202010230834 A CN202010230834 A CN 202010230834A CN 111446151 A CN111446151 A CN 111446151A
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- crystal grains
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- crystal
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- 239000013078 crystal Substances 0.000 title claims abstract description 92
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000005520 cutting process Methods 0.000 claims abstract description 37
- 238000004140 cleaning Methods 0.000 claims abstract description 25
- 239000011521 glass Substances 0.000 claims abstract description 24
- 239000000853 adhesive Substances 0.000 claims abstract description 23
- 230000001070 adhesive effect Effects 0.000 claims abstract description 23
- 239000002904 solvent Substances 0.000 claims abstract description 19
- 238000000227 grinding Methods 0.000 claims abstract description 17
- 239000000126 substance Substances 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 6
- 238000005336 cracking Methods 0.000 abstract description 3
- 238000004026 adhesive bonding Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 26
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Abstract
The invention discloses a method for transferring crystal grains to a blue film in batches after cutting the crystal grains, which comprises the following steps: bonding the front side, cutting and grinding, gluing the back side, overturning and fixing, reducing viscosity, separating grains and cleaning by a solvent. According to the invention, laser bonding is adopted, so that the viscosity of the adhesive is gradually reduced, the glass carrier plate is easier to separate from the crystal grains, and the crystal grain cracking rate and the yield are greatly reduced; after the crystal grains are separated, the crystal grains are cleaned by using a solvent or a chemical cleaning solution, so that the residual adhesive on the crystal grains is thoroughly eliminated, and the subsequent crystal grains are convenient to process and use. The problem that after a crystal grain cutting procedure in the prior art, when the crystal grain is taken down from a UV cutting blue film with strong adhesive force, the crystal grain is easy to crack is solved.
Description
Technical Field
The invention belongs to the field of wafer processing, and particularly relates to a method for transferring crystal grains to a blue film in batches after the crystal grains are cut.
Background
With the increasing popularity of semiconductor technology, the common trend of wafer thinning is that wafers, ultra-thin wafers, generally having a thickness of 20-250 μm, are used for semiconductor devices. The current process is to bond the wafer and the glass carrier plate, to use the glass carrier plate to carry out the back process such as wafer thinning, to debond the glass carrier plate, to place the glass carrier plate on the grain cutting UV film frame, to carry out the grain cutting by Diamond Saw or laser plasma.
However, in the prior art, after the wafer is thinned to less than 80 μm, the wafer is processed through the above steps and then transported to a subsequent off-site packaging test process factory, and when the wafer is to be taken off from the UV-cut blue film with strong adhesion, the wafer is very easy to crack. Therefore, it is desirable to design a method for preventing the die from cracking during the separation of the wafer after the die cutting process.
In view of the above problems, a method for transferring the die to the blue film in batch after cutting the die is designed.
Disclosure of Invention
In view of the defects of the prior art, the present invention provides a method for transferring crystal grains to a blue film in batch after cutting the crystal grains, which solves the problem in the prior art that the crystal grains are easily cracked when being taken off from a UV cut blue film with strong adhesion after the crystal grain cutting process.
The purpose of the invention can be realized by the following technical scheme:
a method for transferring crystal grains to a blue film in batch after cutting the crystal grains comprises the following steps:
s1, front bonding: bonding the wafer coated with the adhesive with the glass carrier coated with the release layer;
s2, cutting and grinding: carrying out back cutting and back grinding on the wafer to finish the grain cutting;
s3, overturning and fixing: turning the crystal grains, and placing the crystal grains on a film frame with a UV type blue film frame;
s4, bonding resolution: performing debonding through a laser or thermal decomposition mode to eliminate the viscosity of the bonding adhesive of the glass carrier plate, and performing debonding;
s5, disengaging: the glass carrier plate is separated from the crystal grains;
s6, solvent cleaning: cleaning the crystal grains by using a solvent or a chemical cleaning solution, and removing the residual adhesive on the crystal grains;
s7, facilitating subsequent operations: the silicon wafer divided by the crystal grains is arranged on the UV type blue film frame, the subsequent process can be carried out, and the problem of crystal grain breakage is avoided.
The front bonding temperature is 50-250 ℃.
The cutting and grinding controls the size of the crystal grains to be 60-80 microns.
The concentration of the solvent or the chemical cleaning liquid is controlled to be 40-70% in the solvent cleaning process.
The crystal grains after cutting and grinding are not contacted with each other.
The invention has the beneficial effects that:
1. according to the invention, laser bonding is adopted, so that the viscosity of the adhesive is gradually reduced, the glass carrier plate is easier to separate from the crystal grains, and the crystal grain cracking rate and the yield are greatly reduced;
2. the invention uses solvent or chemical cleaning liquid to clean after the crystal grains are separated, thereby thoroughly eliminating the residual adhesive on the crystal grains and being convenient for processing and using the subsequent crystal grains.
Drawings
In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present invention, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
FIG. 1 is a schematic diagram of a front side bonding configuration of an embodiment of the present invention;
FIG. 2 is a schematic view of a cutting and grinding structure according to an embodiment of the present invention;
FIG. 3 is a schematic view of a flip-flop mount structure according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a detached-die structure according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "opening," "upper," "lower," "thickness," "top," "middle," "length," "inner," "peripheral," and the like are used in an orientation or positional relationship that is merely for convenience in describing and simplifying the description, and do not indicate or imply that the referenced component or element must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be considered as limiting the present invention.
Example 1
A method for transferring crystal grains to a blue film in batch after cutting the crystal grains comprises the following steps:
s1, front bonding: bonding the wafer 1 coated with the adhesive 3 and the glass carrier plate 2 coated with the release layer 4, and controlling the temperature to be 150-200 ℃;
s2, cutting and grinding: carrying out back cutting and back grinding on the wafer 1 to finish cutting the crystal grains 5 and thinning the crystal grains 5 to 60 microns;
s3, overturning and fixing: turning the crystal grains 5 over, and placing the crystal grains 5 on a film frame 6 with a UV type blue film frame;
s4, bonding resolution: performing debonding through a laser or thermal decomposition mode to eliminate the viscosity of the bonding adhesive 3 of the glass carrier plate 2, and performing debonding;
s5, disengaging: the glass carrier plate 2 is separated from the crystal grain 5;
s6, solvent cleaning: cleaning the crystal grain 5 by using a solvent or a chemical cleaning solution with the concentration of 50%, and removing the residual adhesive 3 on the crystal grain 5;
s7, facilitating subsequent operations: the silicon wafer divided by the crystal grains 5 is placed on the UV type blue film frame, the subsequent process can be carried out, and the problem of crystal grain 5 breakage is avoided.
Example 2
A method for transferring crystal grains to a blue film in batch after cutting the crystal grains comprises the following steps:
s1, front bonding: bonding the wafer 1 coated with the adhesive 3 and the glass carrier plate 2 coated with the release layer 4, and controlling the temperature to be 50-100 ℃;
s2, cutting and grinding: carrying out back cutting and back grinding on the wafer 1 to finish cutting the crystal grains 5 and thinning the crystal grains 5 to 80 microns;
s3, overturning and fixing: turning the crystal grains 5 over, and placing the crystal grains 5 on a film frame 6 with a UV type blue film frame;
s4, bonding resolution: performing debonding through a laser or thermal decomposition mode to eliminate the viscosity of the bonding adhesive 3 of the glass carrier plate 2, and performing debonding;
s5, disengaging: the glass carrier plate 2 is separated from the crystal grain 5;
s6, solvent cleaning: cleaning the crystal grain 5 by using a solvent or a chemical cleaning solution with the concentration of 60%, and removing the residual adhesive 3 on the crystal grain 5;
s7, facilitating subsequent operations: the silicon wafer divided by the crystal grains 5 is placed on the UV type blue film frame, the subsequent process can be carried out, and the problem of crystal grain 5 breakage is avoided.
Example 3
A method for transferring crystal grains to a blue film in batch after cutting the crystal grains comprises the following steps:
s1, front bonding: bonding the wafer 1 coated with the adhesive 3 and the glass carrier plate 2 coated with the release layer 4, and controlling the temperature to be 100-150 ℃;
s2, cutting and grinding: carrying out back cutting and back grinding on the wafer 1 to finish cutting the crystal grains 5 and thinning the crystal grains 5 to 50 microns;
s3, overturning and fixing: turning the crystal grains 5 over, and placing the crystal grains 5 on a film frame 6 with a UV type blue film frame;
s4, bonding resolution: performing debonding through a laser or thermal decomposition mode to eliminate the viscosity of the bonding adhesive 3 of the glass carrier plate 2, and performing debonding;
s5, disengaging: the glass carrier plate 2 is separated from the crystal grain 5;
s6, solvent cleaning: cleaning the crystal grain 5 by using a solvent or a chemical cleaning solution with the concentration of 70%, and removing the residual adhesive 3 on the crystal grain 5;
s7, facilitating subsequent operations: the silicon wafer divided by the crystal grains 5 is placed on the UV type blue film frame, the subsequent process can be carried out, and the problem of crystal grain 5 breakage is avoided.
Example 4
A method for transferring crystal grains to a blue film in batch after cutting the crystal grains comprises the following steps:
s1, front bonding: bonding the wafer 1 coated with the adhesive 3 and the glass carrier plate 2 coated with the release layer 4, and controlling the temperature to be 200-250 ℃;
s2, cutting and grinding: carrying out back cutting and back grinding on the wafer 1 to finish cutting the crystal grains 5 and thinning the crystal grains 5 to 60 microns;
s3, overturning and fixing: turning the crystal grains 5 over, and placing the crystal grains 5 on a film frame 6 with a UV type blue film frame;
s4, bonding resolution: performing debonding through a laser or thermal decomposition mode to eliminate the viscosity of the bonding adhesive 3 of the glass carrier plate 2, and performing debonding;
s5, disengaging: the glass carrier plate 2 is separated from the crystal grain 5;
s6, solvent cleaning: cleaning the crystal grain 5 by using a solvent or a chemical cleaning solution with the concentration of 40%, and removing the residual adhesive 3 on the crystal grain 5;
s7, facilitating subsequent operations: the silicon wafer divided by the crystal grains 5 is placed on the UV type blue film frame 6, the subsequent process can be carried out, and the problem of crystal grain 5 breakage is avoided.
The specific results of the above examples are shown in the following table:
| examples | Die yield | Rate of crystal grain chipping |
| 1 | 96％ | 0.5％ |
| 2 | 97％ | 0.6％ |
| 3 | 96％ | 0.6％ |
| 4 | 95％ | 0.7％ |
In the description herein, references to the description of "one embodiment," "an example," "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed.
Claims (5)
1. A method for transferring crystal grains to a blue film in batch after cutting the crystal grains is characterized by comprising the following steps:
s1, front bonding: bonding the wafer (1) coated with the adhesive (3) with the glass carrier plate (2) coated with the release layer (4);
s2, cutting and grinding: carrying out back cutting and back grinding on the wafer (1) to finish cutting of the crystal grains (5);
s3, overturning and fixing: turning the crystal grains (5) and placing the crystal grains (5) on a film frame (6) with a UV type blue film frame;
s4, bonding resolution: debonding is carried out through a laser or thermal decomposition mode, so that the viscosity of the bonding adhesive (3) of the glass carrier plate (2) disappears, and debonding is carried out;
s5, disengaging: the glass carrier plate (2) is separated from the crystal grains (5);
s6, solvent cleaning: cleaning the crystal grains (5) by using a solvent or a chemical cleaning solution, and removing the residual adhesive (3) on the crystal grains (5);
s7, facilitating subsequent operations: the silicon circle divided by the crystal grains (5) is arranged on the UV type blue film frame, the subsequent process can be carried out, and the problem of crystal grain (5) breakage is avoided.
2. The method according to claim 1, wherein the front bonding temperature is 50-250 ℃.
3. The method of claim 1, wherein the dicing and grinding controls the size of the die (5) to be 60-80 μm.
4. The method as claimed in claim 1, wherein the solvent cleaning is performed to control the concentration of the solvent or chemical cleaning solution to be 40-70%.
5. The method of claim 1, wherein the cut and ground grains (5) are not in contact with each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010230834.7A CN111446151A (en) | 2020-03-27 | 2020-03-27 | Method for transferring crystal grains to blue film in batches after crystal grains are cut |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010230834.7A CN111446151A (en) | 2020-03-27 | 2020-03-27 | Method for transferring crystal grains to blue film in batches after crystal grains are cut |
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| CN111446151A true CN111446151A (en) | 2020-07-24 |
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| CN202010230834.7A Pending CN111446151A (en) | 2020-03-27 | 2020-03-27 | Method for transferring crystal grains to blue film in batches after crystal grains are cut |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112739003A (en) * | 2020-11-09 | 2021-04-30 | 昆山丘钛光电科技有限公司 | Method and device for dividing FPC (Flexible printed Circuit) connecting board |
| CN113764546A (en) * | 2021-08-30 | 2021-12-07 | 东莞市中麒光电技术有限公司 | Mini-LED device, LED display module and manufacturing method thereof |
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Application publication date: 20200724 |
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