CN111359934A - Wafer cleaning device and wafer cleaning method - Google Patents
Wafer cleaning device and wafer cleaning method Download PDFInfo
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- CN111359934A CN111359934A CN202010287785.0A CN202010287785A CN111359934A CN 111359934 A CN111359934 A CN 111359934A CN 202010287785 A CN202010287785 A CN 202010287785A CN 111359934 A CN111359934 A CN 111359934A
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/14—Wipes; Absorbent members, e.g. swabs or sponges
- B08B1/143—Wipes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/20—Cleaning of moving articles, e.g. of moving webs or of objects on a conveyor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
A cleaning device and a cleaning method for a wafer are disclosed, which comprises a base; the carrier assembly is movably arranged at the bottom of the base, and a carrier for placing a wafer is rotatably arranged at the upper end of the carrier assembly; the wiping component is arranged on the moving path of the carrier component and comprises an automatic feeding material wiping mechanism, a displaceable wiping head mechanism and a titration mechanism which is positioned at the rear end of the wiping head mechanism relative to the moving direction of the carrier component; the atmospheric pressure plasma device is arranged at the tail end of the moving path of the carrier assembly; the wiping component and the atmospheric pressure plasma device are arranged above the carrier, the wiping head mechanism is pressed against the wafer on the carrier when moving, and the carrier rotates or moves relative to the wiping head to clean the wafer. The device is used for cleaning the wafer, so that the water drop angle can be reduced, the cleanliness and the light transmittance are improved, and the problem that film tearing and piece picking are difficult after rear-end film pasting cutting is performed is solved.
Description
Technical Field
The present invention relates to the field of wafer surface cleaning technology, and in particular, to a wafer cleaning apparatus and a wafer cleaning method.
Background
The surface cleanliness of the wafers directly affects the process and product yield, and therefore, the wafers are continuously inspected and cleaned during storage and processing to maintain their cleanliness.
At present, the wafer cleaning method mainly comprises the following two methods:
1. the personnel place the wafer on the desk, and is fixed on one hand, uses dustless cloth to dip in organic solvent on one hand and wipes the wafer surface and try to wipe surperficial foreign matter, embodies through water droplet angle measuring instrument measurement value, and water droplet angle value is big more, and the cleanliness factor is poor more. The water drop angle value of the manual wiping mode is too large, and although the film tearing and picking piece (PP one-time passing rate) after the film pasting and cutting on the surface of the rear-end wafer is not influenced, the surface cleanliness is poor, and the light transmission and the cleanliness of the product are seriously influenced.
2. The vacuum cavity type plasma non-contact cleaning can reduce the water drop angle to 15 degrees or below, namely the surface cleanliness is good, the light transmittance of the product is improved, but the problem that the operation of tearing and picking the film (PP one-time passing rate) after the film is pasted and cut on the surface of the rear-end wafer is difficult is caused.
Disclosure of Invention
The invention provides a wafer cleaning device and a wafer cleaning method, which are used for solving the technical problems that a water drop angle is too large and the cleanliness is poor during cleaning and the influence on the film tearing and sheet picking operation after a film is pasted on the surface of a rear-end wafer is large in the prior art.
The invention provides a cleaning device for a wafer, which comprises a base;
the carrier assembly is movably arranged at the bottom of the base, and a carrier for placing a wafer is rotatably arranged at the upper end of the carrier assembly;
the wiping component is arranged on the moving path of the carrier component and comprises an automatic feeding material wiping mechanism, a displaceable wiping head mechanism and a titration mechanism which is positioned at the rear end of the wiping head mechanism relative to the moving direction of the carrier component;
the atmospheric pressure plasma device is arranged at the tail end of the moving path of the carrier assembly;
the wiping component and the atmospheric pressure plasma device are arranged above the carrier, the wiping head mechanism is pressed against the wafer on the carrier when moving, and the carrier rotates or moves relative to the wiping head to clean the wafer.
Preferably, the stage assembly further includes an X-axis servo module, a Z-axis servo module and a rotation servo module for controlling rotation of the stage. By means of the X-axis servo module and the Z-axis servo module of the carrier assembly and the rotary servo module for controlling the carrier to rotate, various motion modes of the carrier can be realized.
Further preferably, the cleaning moving speed of the X-axis servo module is in the range of 30mm/s-60 mm/s. The moving speed can ensure the cleaning effect of the surface of the wafer.
Preferably, the material wiping mechanism comprises a dust-free cloth feeding and winding module and a tensioning module, wherein the dust-free cloth feeding and winding module is arranged in front of and behind the carrier assembly in the moving direction, and the tensioning module is used for forming a cleaning surface with tension on the dust-free cloth above the wafer. The material wiping mechanism can realize automatic recovery and feeding of the dust-free cloth, and the dust-free cloth is ensured to be clean when cleaned every time.
Preferably, the wiping head mechanism comprises a wiping head and a second Z-axis servo module for controlling Z-axis displacement of the wiping head, and the second Z-axis servo module comprises an air cylinder and a servo motor. The overpressure height can be accurately cleaned through the servo module, and the cylinder can realize wiping operation of constant pressure of the wiping head through the analog quantity electric module.
Preferably, the atmospheric pressure plasma device comprises an atmospheric pressure plasma generating host and a strip-shaped spray head, wherein the strip-shaped spray head is arranged above the wafer. By means of the arrangement of the atmospheric pressure plasma device, the surface of the wafer can be covered, and the cleaning effect is ensured.
Further preferably, the output power of the atmospheric pressure plasma device is taken in the range of 600W to 800W, and the atmospheric pressure is taken in the range of 0.2MPa to 0.5 MPa. By means of the setting of the parameters, the cleanliness of the product can be improved, and the water drop angle is effectively reduced.
According to another aspect of the present invention, a method for cleaning a wafer is provided, which includes:
s1: fixing the wafer on a carrying platform, moving the carrying platform to the position below a wiping component, pre-wetting the wiping material by a titration mechanism of the wiping component, then pressing the wiping material to the surface of the wafer by a wiping head mechanism, and moving or rotating the carrying platform relative to the wiping head mechanism to finish the pre-cleaning of the wafer;
s2: the carrying platform continuously moves to the position below the atmospheric pressure plasma device, the surface of the wafer glass after pre-cleaning is cleaned in a non-contact mode by the atmospheric pressure plasma device, and the material wiping mechanism automatically recovers the pre-wetted material;
s3: the carrier returns to the lower part of the wiping component, the wiping head mechanism is utilized to press the wiping material to the surface of the wafer, the carrier rotates relative to the wiping head mechanism to clean the surface residues of the wafer, and the wiping head mechanism and the carrier reset to finish the cleaning work of the wafer.
Preferably, step S2 specifically includes adjusting the height of the showerhead of the atmospheric pressure plasma apparatus and the wafer, which is taken within a range of 10mm to 30mm, using a Z-axis servo module that controls the stage. By adjusting the distance between the carrying platform and the spray head of the atmospheric pressure plasma device, the atmospheric pressure plasma cleaning effect can be better.
Preferably, the wiping mechanism comprises an automatic dust-free cloth feeding and winding module, and the step S2 automatically recycles 10mm-15mm of dust-free cloth by using the automatic dust-free cloth feeding and winding module. The automatic feeding winding module can ensure that the dustless cloth wiped after plasma cleaning is clean every time.
According to the cleaning device for the wafer, the dust-free cloth stained with the organic solvent is used for pre-cleaning and wiping, dirt on the surface of the wafer is effectively removed, the photoresist which is difficult to wipe cleanly is pre-wetted, organic matters on the surface of the product are decomposed under high pressure by using the atmospheric pressure plasma device, after decomposition is finished, the carrying platform module moves back to the clean dust-free cloth cleaning module, and residues on the wafer product are wiped and cleaned again. The device and the cleaning method can control the water drop angle of the wafer product within the range of 30-60 degrees, effectively improve the light transmittance of the product and avoid the problem that the film-sticking, cutting, film-tearing and sheet-picking operation at the rear end is difficult.
Drawings
The accompanying drawings are included to provide a further understanding of the embodiments and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments and together with the description serve to explain the principles of the invention. Other embodiments and many of the intended advantages of embodiments will be readily appreciated as they become better understood by reference to the following detailed description. The elements of the drawings are not necessarily to scale relative to each other. Like reference numerals designate corresponding similar parts.
Fig. 1 is a schematic structural diagram of an apparatus for cleaning a wafer according to an embodiment of the present invention;
FIG. 2 is a front view of an apparatus for cleaning a wafer according to an embodiment of the present invention;
FIG. 3 is a top view of an apparatus for cleaning a wafer according to an embodiment of the present invention;
fig. 4 is a flowchart illustrating a method for cleaning a wafer according to an embodiment of the invention.
Detailed Description
In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology, such as "top," "bottom," "left," "right," "up," "down," etc., is used with reference to the orientation of the figures being described. Because components of embodiments can be positioned in a number of different orientations, the directional terminology is used for purposes of illustration and is in no way limiting. It is to be understood that other embodiments may be utilized and logical changes may be made without departing from the scope of the present invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.
Fig. 1 is a schematic structural diagram illustrating a wafer cleaning apparatus according to an embodiment of the present invention. As shown in fig. 1, the wafer cleaning device includes a stage assembly 1, a wiping assembly 2, an atmospheric pressure plasma device 3, and a base 4, where the stage assembly 1, the wiping assembly 2, and the atmospheric pressure plasma device 3 are all disposed on the base 4, the base 4 includes a portal frame 41 disposed in the middle, a slide rail 42 disposed at the bottom, and an atmospheric pressure plasma device fixing frame 43 disposed at one end, the stage assembly 1 is slidably disposed on the slide rail 42, the wiping assembly 2 includes a wiping material feeding end 21, a wiping head mechanism 22, and a wiping material receiving end 23, the wiping head mechanism 22 is fixed at the top of the portal frame 41, and the atmospheric pressure plasma device 3 is fixed on the atmospheric pressure plasma device fixing frame 43. The back and forth movement of stage assembly 1 on slide rails 42 of base 4 allows stage assembly 1 to be positioned under wiping head mechanism 22 and under atmospheric plasma device 3 to facilitate cleaning of wafers on stage assembly 1 by wiping head mechanism 22 and atmospheric plasma device 3.
Fig. 2 is a front view of a wafer cleaning apparatus according to an embodiment of the present invention. As shown in fig. 2, the stage assembly 1 includes a stage 11, a rotation servo module 12, a Z-axis servo module 13, and an X-axis servo module 14. The rotation servo module 12 controls the stage 11 so that the stage 11 can rotate freely, the X-axis servo module 14 controls the stage 11 so that it can move back and forth along the slide rail 42, and the Z-axis servo module 13 is used for adjusting the distance between the stage 11 and the atmospheric pressure plasma device 3 or the wiping head mechanism 22, so that different degrees of cleaning effects can be achieved.
In a specific embodiment, the wiping assembly 2 further includes a feeding end tensioning mechanism 24 and a receiving end tensioning mechanism 25 for tensioning the wiping material, the wiping material is generally a dust-free cloth, and is fixed on the wiping material feeding end 21 and the wiping material receiving end 23 by reeling, the dust-free cloth sequentially passes through the feeding end tensioning mechanism 24 and the receiving end tensioning mechanism 25 and is finally wound on the wiping material receiving end 23, and the automatic feeding and recovering operation of the dust-free cloth is realized by the servo motor arranged on the wiping material receiving end 23, so that the waste phenomenon of the dust-free cloth in the using process can be avoided. Preferably, the rotating mechanism of the wiping material feeding end 21 is provided with a damping mechanism, so as to prevent the dust-free cloth on the wiping material feeding end 21 from being loosened due to rotation under inertia or other conditions, which is not beneficial to cleaning, and also beneficial to tensioning the dust-free cloth by the tensioning mechanism.
In a specific embodiment, the wiping head mechanism 22 specifically includes a wiping head 221, an air cylinder 222, a second Z-axis servo motor 223, and a titration head mechanism 224, the wiping head 221 is fixed on a wiping head fixing seat at the bottom of the air cylinder 222, and the wiping head 221 can be fixed on the fixing seat through a bolt.
In a preferred embodiment, the wiping head 221 is made of a fluororubber material, which has high chemical stability, is the best medium-resistant one of all elastomers at present, is resistant to most organic and inorganic solvents, has excellent heat resistance, oxidation resistance, oil resistance, corrosion resistance and atmospheric aging resistance, can improve the service life, and has certain elasticity, so that the wafer cannot be damaged when the wiping head is pressed against the surface of the wafer. Further preferably, the hardness of the fluororubber is selected to be better in shore 90 ° cleaning effect and service life according to multiple tests of the inventor.
In a specific embodiment, the wiping head 221 is a strip-shaped structure, a cleaning contact surface of the bottom of the wiping head 221 and the wafer is slightly larger than the surface of the wafer, specifically, the contact surface has a length of × and a width of 310mm × 10mm, it should be appreciated that the wiping head 221 is a replaceable part, covers the size of all wafers at present (maximum size of 12 inches), and the wiping head 221 is wear-resistant, corrosion-resistant, and does not need to be replaced frequently, and suitable sizes can be selected according to the size of the wafer to meet the requirements of cleaning wafers with different sizes.
In a specific embodiment, the wiping head 221 is above the clean cloth, the second Z-axis servo motor 223 controls the cylinder 222 to push the wiping head 221 to move toward the surface of the wafer to be cleaned, and the second Z-axis servo motor 223 pushes the clean cloth to press against the clean cloth, so that the rotation servo module 12 or the X-axis servo module 14 of the stage assembly 1 moves or rotates the stage 11 relative to the wiping head 221 to perform the wiping operation. The wiping work of this structure can guarantee that the power of wiping is even, compares artifical abluent mode cleaning performance more balanced.
The rear end of the wiping head 221 relative to the movement direction of the dust-free cloth is provided with the titration mechanism 224, the titration mechanism 224 moves up and down under the driving of the air cylinder 222 along with the wiping head 221, and the setting height of the titration mechanism 224 is higher than that of the wiping head 221, so that the situation that the titration effect is influenced or the dust-free cloth is damaged when the dust-free cloth is touched in the falling process can be prevented. Preferably, the titration solvent is an organic solvent, and the organic solvent can be used to dissolve some organic compounds (such as grease, wax, resin, rubber, dye, photoresist, and the like) which are insoluble in water, so that the surface of the wafer can be cleaned more cleanly.
Fig. 3 is a plan view of a wafer cleaning apparatus according to an embodiment of the present invention, and as shown in fig. 3, the atmospheric pressure plasma apparatus 3 is disposed at the extreme end of the travel direction of the stage 11, and although two stage assemblies 1 are shown in fig. 1 to 3, it should be understood that the two illustrated stage assemblies 1 are two states of the stage assembly 1, that is, two position states representing the travel of the stage assembly 1 on the base 4.
Preferably, through a plurality of tests of the applicant of the present invention, the output power of the atmospheric pressure plasma device is set to be 600w-800w, the atmospheric pressure is set to be 0.2Mpa-0.5Mpa, the Z-axis servo module 13 of the stage assembly 1 adjusts the height of the plasma nozzle 31 from the product to be 10mm-30mm, the speed of the X-axis servo module 14 of the stage assembly 1 is set to be 30mm/s-60mm/s, the water drop angle of the wafer product can be controlled to be within the range of 30-60 °, and meanwhile, the light transmittance of the product can be improved and the problem of difficult operation of film cutting and film tearing (PP one-time pass rate) at the rear end can be avoided.
Table 1 shows the corresponding relationship between the output power of the atmospheric pressure plasma device, the atmospheric pressure, the height from the plasma nozzle to the wafer, the speed of the X-axis servo module 14, the water droplet angle of the cleaned wafer product, and the one-time pass rate of PP, which are obtained through a plurality of experiments by the inventor of the present application:
table 1:
with continued reference to fig. 4, fig. 4 illustrates a method for cleaning a wafer according to an embodiment of the present invention, utilizing the cleaning apparatus as shown in fig. 1-3, comprising the steps of:
s401: after the wafer is fixed on the stage 11, the stage 11 moves to the lower part of the wiping component 2, the titration mechanism 224 of the wiping component 2 pre-wets the wiping material, the wiping material is pressed to the surface of the wafer by the wiping head 221, and the stage 11 moves or rotates relative to the wiping head mechanism 22 to finish the pre-cleaning of the wafer.
In a specific embodiment, the titration mechanism 224 is used to pre-wet the dust-free cloth, the second Z-axis servo motor 223 controls the cylinder 222 to push the wiping head 221 to move towards the surface of the wafer to be cleaned, and the second Z-axis servo motor 223 pushes the dust-free cloth against the surface of the wafer to be cleaned, and the X-axis servo module 14 of the stage assembly 1 moves the wafer on the stage 11 relative to the wiping head 221 to achieve pre-cleaning. The precleaning may utilize an organic solvent to clean contaminants such as photoresist on the surface of the wafer.
S402: the stage 11 is moved further to a position below the atmospheric pressure plasma device 3, the titrating solvent of the wafer after the pre-cleaning is removed by the atmospheric pressure plasma device 3, and the material wiping mechanism automatically recovers the pre-wetted material. After the pre-cleaning is completed, the carrying platform 11 carries the wafer and continues to be driven by the X-axis servo module 14 to move to the position below the atmospheric pressure plasma device 3, and the organic matter on the surface of the wafer is decomposed by the atmospheric pressure plasma device 3, wherein the cleaning mode of the atmospheric pressure plasma device 3 is non-contact cleaning, and the non-contact cleaning can avoid damage to the surface of the wafer.
In a specific embodiment, the Z-axis servo module 13 of the stage assembly 1 adjusts the height of the plasma nozzle 31 from the product to be within a range of 10mm to 30mm, and meanwhile, the output power of the atmospheric pressure plasma device is set to be 600w to 800w, and the atmospheric pressure is set to be 0.2Mpa to 0.5Mpa, so that a better cleaning effect can be achieved.
In a specific embodiment, after the pre-cleaning operation is completed, the cleaned dust-free cloth is recovered by the dust-free cloth under the action of the material wiping and receiving end 23, preferably, the recovered size is 10mm to 15mm, so that the cleanness of the dust-free cloth cleaned next time can be ensured.
S403, after the carrier 11 returns to the position below the wiping component 2, the wiping head 221 is used for pressing the clean wiping material to the surface of the wafer, and the carrier 11 rotates relative to the wiping head 221 to clean residues on the surface of the wafer, the wiping head 221 and the carrier 11 reset to complete the cleaning work of the wafer, after plasma cleaning, the clean dust-free cloth which is not wetted by the organic solvent is used for further cleaning the surface 5 of the wafer in the specific embodiment, the carrier 11 returns to the position below the wiping head 221 under the action of the X-axis servo motor 14, the second Z-axis servo motor 223 controls the air cylinder 222 to push the wiping head 221 to move towards the surface of the wafer to be cleaned, the dust-free cloth is abutted against the dust-free cloth and is pressed towards the surface of the wafer, the dust-free cloth at this moment is dry clean dust-free cloth which is not wetted by the titration mechanism 224, the rotation servo module 12 of the carrier component 1 enables the wafer on the carrier 11 to rotate relative to complete the pre-cleaning work, the residues on the surface of the wafer can be effectively cleaned through the relative rotation, and the rotation of the carrier 11 can.
In a specific embodiment, in the whole cleaning process, the speed of the X-axis servo module 14 of the stage assembly 1 is set to be 30mm/s to 60mm/s, the moving speed can ensure that the wafer is sufficiently cleaned, the cleaning efficiency is also ensured, and the situation that the cleaning effect is poor due to an excessively fast moving speed or the cleaning efficiency is too low due to an excessively slow moving speed is avoided.
After the cleaning is carried out by the method, the water drop angle of the wafer can be controlled within the range of 30-60 degrees, the light transmittance of the product is effectively improved, and the problem that the operation of sticking a film, cutting the film, tearing the film and picking the sheet (PP one-time passing rate) at the rear end is difficult is solved.
It will be apparent to those skilled in the art that various modifications and variations can be made to the embodiments of the present invention without departing from the spirit and scope of the invention. In this way, if these modifications and changes are within the scope of the claims of the present invention and their equivalents, the present invention is also intended to cover these modifications and changes. The word "comprising" does not exclude the presence of other elements or steps than those listed in a claim. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage. Any reference signs in the claims shall not be construed as limiting the scope.
Claims (10)
1. An apparatus for cleaning a wafer, comprising:
a base;
the carrier assembly is movably arranged at the bottom of the base, and a carrier for placing the wafer is rotatably arranged at the upper end of the carrier assembly;
the wiping component is arranged on the moving path of the carrier component and comprises an automatic feeding material wiping mechanism, a displaceable wiping head mechanism and a titration mechanism which is positioned at the rear end of the wiping head mechanism relative to the moving direction of the carrier component;
the atmospheric pressure plasma device is arranged at the tail end of the moving path of the carrier assembly;
the wiping component and the atmospheric pressure plasma device are arranged above the carrying platform, the wiping head mechanism is pressed against the wafer on the carrying platform when moving, and the carrying platform rotates or moves relative to the wiping head to clean the wafer.
2. The apparatus of claim 1, wherein the stage assembly further comprises an X-axis servo module, a Z-axis servo module, and a rotation servo module for controlling rotation of the stage.
3. The apparatus for cleaning wafer as claimed in claim 2, wherein the cleaning moving speed of the X-axis servo module is taken from the range of 30mm/s-60 mm/s.
4. A device for cleaning a wafer as claimed in claim 1, wherein the material wiping mechanism comprises a dust-free cloth feeding and winding module arranged back and forth along the moving direction of the carrier assembly, and a tensioning module for forming the dust-free cloth into a cleaning surface with tension above the wafer.
5. The wafer cleaning device of claim 1, wherein the wiping head mechanism comprises a wiping head and a second Z-axis servo module for controlling Z-axis displacement of the wiping head, and the second Z-axis servo module comprises an air cylinder and a servo motor.
6. The apparatus of claim 1, wherein the atmospheric plasma device comprises an atmospheric plasma generating main machine and a strip-shaped nozzle, and the strip-shaped nozzle is disposed above the wafer.
7. The apparatus of claim 1 or 6, wherein the output power of the atmospheric pressure plasma device is in the range of 600W-800W, and the atmospheric pressure is in the range of 0.2Mpa-0.5 Mpa.
8. A method for cleaning a wafer, using the apparatus for cleaning a wafer according to any one of claims 1 to 7, comprising:
s1: fixing the wafer on the carrying platform, moving the carrying platform to the position below the wiping component, pre-wetting a wiping material by a titration mechanism of the wiping component, then pressing the wiping material to the surface of the wafer by the wiping head mechanism, and moving or rotating the carrying platform relative to the wiping head mechanism to finish pre-cleaning of the wafer;
s2: the carrying platform continuously moves to the position below an atmospheric pressure plasma device, the atmospheric pressure plasma device is used for removing the titration solvent of the wafer after the pre-cleaning, and the material wiping mechanism automatically recovers the pre-wetted material wiping;
s3: the carrying platform returns to the lower part of the wiping component, the wiping head mechanism is utilized to press the wiping material to the surface of the wafer, the carrying platform rotates relative to the wiping head mechanism to clean the surface residues of the wafer, and the wiping head mechanism and the carrying platform reset to finish the cleaning work of the wafer.
9. The method as claimed in claim 8, wherein the step S2 further comprises adjusting a height between a showerhead of the atmospheric pressure plasma apparatus and the wafer by a Z-axis servo module for controlling the stage, wherein the height is within a range of 10mm-30 mm.
10. A method for cleaning a wafer according to claim 8, wherein the material wiping mechanism comprises an automatic feeding and winding module for clean cloth, and the clean cloth of 10mm-15mm is automatically recycled by the automatic feeding and winding module for clean cloth in step S2.
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| CN202010287785.0A CN111359934A (en) | 2020-04-10 | 2020-04-10 | Wafer cleaning device and wafer cleaning method |
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| CN202010287785.0A CN111359934A (en) | 2020-04-10 | 2020-04-10 | Wafer cleaning device and wafer cleaning method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112864058A (en) * | 2021-03-04 | 2021-05-28 | 山东才聚电子科技有限公司 | Wafer glass powder wiping device |
| CN113013066A (en) * | 2021-03-01 | 2021-06-22 | 昆山基侑电子科技有限公司 | Automatic recovery device for wafer cleaning |
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| CN114850113B (en) * | 2022-04-26 | 2024-01-09 | 中环领先半导体材料有限公司 | Cleaning method of thinning carrier |
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