CN111244758A - Silicon-based narrow-linewidth high-power external cavity laser based on transverse magnetic mode - Google Patents
Silicon-based narrow-linewidth high-power external cavity laser based on transverse magnetic mode Download PDFInfo
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- CN111244758A CN111244758A CN202010073025.XA CN202010073025A CN111244758A CN 111244758 A CN111244758 A CN 111244758A CN 202010073025 A CN202010073025 A CN 202010073025A CN 111244758 A CN111244758 A CN 111244758A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0655—Single transverse or lateral mode emission
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Abstract
A silicon-based narrow-linewidth high-power external cavity laser based on a transverse magnetic mode comprises a reflection-type semiconductor optical amplifier, a light spot size converter, a phase shifter, a first micro-ring filter, a second micro-ring filter, a Sagnac reflector and a mode converter. By utilizing the advantages of small line width enhancement factor of the transverse magnetic mode in the semiconductor optical amplifier, small transmission loss in the silicon waveguide and high upper limit of power, the line width of the laser can be further compressed, the output laser power is improved, and meanwhile, the silicon optical passive device based on the transverse magnetic mode also has larger process tolerance. The transverse magnetic mode is converted into the transverse electric mode by the mode converter at the laser emitting end, and the transverse magnetic mode can be integrated with other optical signal processing devices based on the transverse electric mode.
Description
Technical Field
The invention relates to the field of integrated optics of optical communication, in particular to a silicon-based narrow-linewidth high-power external cavity laser based on a transverse magnetic mode.
Background
The general technical idea for realizing the narrow linewidth high-power silicon-based laser at the present stage is as follows: the III-V group semiconductor optical amplifier and the silicon-based external cavity form a laser in a hybrid integration or heterogeneous integration mode, and the narrow linewidth advantage is provided by two dimensions of an external cavity optical feedback loop and the optical amplifier self-process. Light is transmitted in transverse electric field mode throughout the reflective cavity.
In the semiconductor optical amplifier, the transverse magnetic field mode has smaller line width enhancement factor, and the value of the mathematical relation between the line width and the line width enhancement factor is that Deltav is (1+ α)2) x, where Δ v is the linewidth, α is the linewidth enhancement factor,
(wherein: rwIs a light confinement factor; rspSpontaneous emission rate) while the linewidth enhancement factor of the transverse magnetic mode is much lower than that of the transverse electric mode.
In the silicon waveguide, a two-photon absorption effect and a free carrier absorption effect exist, and the limiting factor of a transverse magnetic mode in the silicon waveguide is smaller than that of a transverse electric mode, which means that light propagating in the form of the transverse magnetic mode has lower transmission loss in a conventional 220nm high single-mode silicon waveguide, so that the upper limit of optical power in the optical waveguide can be improved.
Meanwhile, the optical field energy of the transverse magnetic mode is more concentrated on the upper surface and the lower surface of the waveguide, the optical field energy of the transverse electric mode is more concentrated on two sides of the waveguide, the upper surface and the lower surface of the silicon waveguide are smoother, and the two walls have certain roughness due to plasma etching, so that the transverse magnetic mode has smaller transmission loss compared with the transverse electric mode in the process of transmitting light along the waveguide.
Therefore, it is necessary to provide a silicon-based narrow linewidth high-power external cavity laser based on transverse magnetic mode to solve the above problems.
Disclosure of Invention
The invention provides a narrow linewidth high-power external cavity laser based on a transverse magnetic mode, which selects a semiconductor optical amplifier and an external cavity optical waveguide based on transverse magnetic mode transmission, further reduces the linewidth of laser on the existing basis and improves the output laser power.
The technical solution of the invention is as follows:
a silicon-based narrow-linewidth high-power external cavity laser based on transverse magnetic mode is characterized by comprising a reflection-type semiconductor optical amplifier, a light spot size converter, a phase shifter, a first micro-ring filter, a second micro-ring filter, a Sagnac reflector and a mode converter, wherein the output end of the reflection-type semiconductor optical amplifier is connected with the input end of the light spot size converter, the output end of the light spot size converter is connected with one end of the phase shifter, the other end of the phase shifter is coupled with the first micro-ring filter and the second micro-ring filter, the first micro-ring filter and the second micro-ring filter are slightly different in size to form a vernier filtering effect, the second micro-ring filter is coupled with a port waveguide of the adjustable Sagnac reflector, and the other port of the Sagnac reflector is the emergent end of laser, the laser output end is connected with a mode converter to convert the mode from transverse magnetic mode to transverse electric mode, and the output end of the mode converter can be connected with any transverse electric mode processing device in series.
One end of the reflection type semiconductor optical amplifier is provided with high reflectivity (the reflectivity is more than or equal to 90%), the other end of the reflection type semiconductor optical amplifier is provided with low reflectivity (the reflectivity is less than or equal to 0.005%), and the low reflectivity end is the output end of the reflection type semiconductor optical amplifier; the gain wavelength of the reflection-type semiconductor optical amplifier is in a communication waveband and can be realized by using III-V quantum well or quantum dot materials.
The light spot size converter is realized by an inverted cone coupler or a suspended waveguide coupler.
The phase shifter adopts a thermo-optic phase shifter or an electro-optic phase shifter.
The Sagnac reflector is formed by connecting a Mach-Zehnder interferometer and a U-shaped waveguide, a phase shifter is arranged on one arm of the Mach-Zehnder interferometer, and the coupling ratio of an input end and an output end is 50%.
The mode converter can convert a transverse magnetic mode into a transverse electric mode so as to be integrated with a conventional silicon-based photonic device based on the transverse electric mode.
The remaining components, except for the reflective semiconductor optical amplifier, were realized with a conventional size silicon waveguide (500 nm wide and 220nm thick). The reflective semiconductor optical amplifier and the silicon chip may be aligned by butt coupling.
On the basis of the technical scheme, the phase shifter, the first micro-ring filter and the second micro-ring filter are adjusted, the Fabry-Perot cavity of the laser is aligned with the resonant wavelength of the vernier effect to realize mode selection, and the output wavelength of the laser can be continuously adjusted.
Compared with the prior art, the invention has the following beneficial effects:
1. the optical transverse magnetic mode has a lower line width enhancement factor in the inner cavity of the reflection type semiconductor optical amplifier, and can obtain higher gain in the semiconductor optical amplifier;
2. the optical transverse magnetic mode has small transmission loss in the silicon waveguide and high upper limit of power;
3. the mode converter added behind the reflector can convert high-power and narrow-linewidth laser transmitted in a transverse magnetic mode into more universal laser transmitted based on a transverse electric mode, so that the laser can be integrated with other devices based on the transverse electric mode.
Drawings
FIG. 1 is a schematic diagram of a transverse magnetic mode-based silicon-based narrow-linewidth high-power external cavity laser.
Fig. 2 is a cross-sectional optical mode field distribution diagram of transverse electric and magnetic modes propagating in a silica-based optical waveguide, where a is the transverse electric mode and b is the transverse magnetic mode.
Detailed Description
To further clarify the objects, technical solutions and core advantages of the present invention, the present invention will be described in further detail with reference to the accompanying drawings and examples. The following specific examples are for illustrative purposes only and are not intended to limit the invention.
As shown in fig. 1, the silicon-based narrow linewidth high-power external cavity laser based on transverse magnetic mode of the present invention includes a reflective semiconductor optical amplifier 101, a spot size converter 102, a phase shifter 103, a first micro-ring filter 104, a second micro-ring filter 105, a sagnac mirror 106 and a mode converter 107. The output end of the reflective semiconductor optical amplifier 101 is connected to the input end of the spot size converter 102, the output end of the spot size converter 102 is connected to one end of the phase shifter 103, the other end of the phase shifter 103 is coupled to a micro-ring resonator formed by the first micro-ring filter 104 and the second micro-ring filter 105, wherein the first micro-ring filter 104 and the second micro-ring filter 105 have slightly different sizes to form a vernier filtering effect, the second micro-ring filter 105 is coupled to a port waveguide of the adjustable sagnac reflector 106, and the other port of the sagnac reflector 106 is a laser output end. The laser output is further connected to a mode converter 107 for converting the mode from the transverse magnetic mode to the transverse electric mode, and the output of the mode converter 107 can be connected in series with any transverse electric mode processing device.
In the embodiment shown in fig. 1, one end of the reflective semiconductor optical amplifier 101 is set to have a high reflectivity (reflectivity ≥ 90%) and the other end is set to have a low reflectivity (reflectivity ≤ 0.005%), and the low reflectivity end is connected to the spot-size converter 102. In order to meet the requirement of transmitting transverse magnetic modes, the thickness of the active layer can be adjusted, so that the waveguide of the active region supports low-loss transmission of the transverse magnetic modes.
In the embodiment shown in fig. 1, the spot-size converter 102 is an inverse taper coupler, and in an actual implementation process, other structures having a spot-size conversion function may also be used.
In the embodiment shown in fig. 1, the first micro-ring filter 104 and the second micro-ring filter 105 are narrow-pass-band filters and are micro-ring resonators, and in an actual implementation process, other structures having a filtering function may also be adopted.
In the embodiment shown in fig. 1, the reflecting mirror 106 is composed of a mach-zehnder interferometer and a U-shaped waveguide, and the splitting ratio of the input end and the output end is designed to be uniform, that is, 50: a split ratio of 50.
In the embodiment of fig. 1, the mode converter 107 supports low-loss conversion of the transverse magnetic mode to the transverse electric mode.
In the embodiment illustrated in fig. 1, the remaining components, except for the reflective semiconductor optical amplifier 101, are implemented as 220nm thick, 500nm wide silicon waveguides. The reflective semiconductor optical amplifier 101 and the silicon chip are aligned by butt coupling.
In the embodiment shown in fig. 1, the free spectral ranges of the first micro-ring filter 104 and the second micro-ring filter 105 are
Where λ is the resonant wavelength of the microring, Δ λ is the wavelength spacing between adjacent resonant peaks, ngRefractive index of waveguide group, L, being a microringrThe perimeter of the microring. The first micro-ring filter 104 and the second micro-ring filter 105 are narrow-band filters with free spectral ranges FSR1And FSR2With small phase difference, a vernier effect filter can be formed, the free spectral range of which
The filter resonant wavelengths can be individually tuned by respective phase shifters.
In the embodiment shown in fig. 1, the mode selection is realized by adjusting the phase shifter 103, the first micro-ring filter 104 and the second micro-ring filter 105, and the fabry-perot cavity of the laser is aligned with the resonant wavelength of the vernier effect, so that the output wavelength of the laser can be continuously adjusted.
In the embodiment illustrated in fig. 1, the optical route is: laser transmitted in a transverse magnetic mode form by the reflective semiconductor optical amplifier 101 is coupled into a silicon-based optical path through the spot size converter 102, is coupled into the first micro-ring filter 104 after passing through the phase shifter 103, is coupled into the second micro-ring filter 105, and is finally coupled into one input waveguide of the sagnac reflector 106, and after the light is reflected by the sagnac reflector 106, part of the light is reversely transmitted to form an external cavity of the laser, and part of the light is output from the other waveguide. The coupling of the Sagnac reflector is formed by a Mach-Zehnder interferometer, wherein a thermal phase shifter is arranged on one arm, and the phase of one path of light is adjusted to interfere with the other path of light, so that the coupling strength of the coupler can be adjusted, and the reflectivity of the Sagnac reflector is adjusted. Laser light is output from the sagnac mirror and converted into transverse magnetic mode and transverse electric mode by a mode converter 107, so that integration with other optical signal processing devices based on transverse electric mode can be realized.
The present invention is not limited to the above-described embodiments, and it will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the principle of the present invention, and such modifications and improvements are also considered to be within the scope of the present invention. Details not described in this specification are within the skill of the art that are well known to those skilled in the art.
Claims (6)
1. A silicon-based narrow linewidth high-power external cavity laser based on a transverse magnetic mode is characterized by comprising a reflection type semiconductor optical amplifier (101), a light spot size converter (102), a phase shifter (103), a first micro-ring filter (104), a second micro-ring filter (105), a Sagnac reflector (106) and a mode converter (107); the output end of the reflection type semiconductor optical amplifier (101) is connected with the input end of the spot size converter (102), the output end of the spot size converter (102) is connected with one end of the phase shifter (103), the other end of the phase shifter (103) is connected with the first micro-ring filter (104), and the second micro-ring filter (105) is coupled with the first micro-ring filter (104). The first micro-ring filter (104) and the second micro-ring filter (105) are slightly different in size to form a vernier filtering effect, the second micro-ring filter is coupled with a port waveguide of the adjustable Sagnac reflector (106), the other port of the Sagnac reflector is a laser emitting end, the laser emitting end is connected with the mode converter (107) to convert the mode from a transverse magnetic mode to a transverse electric mode, and the output end of the mode converter (107) can be connected with any transverse electric mode processing device in series.
2. A silicon-based narrow linewidth high power external cavity laser based on transverse magnetic mode as claimed in claim 1 wherein: one end of the reflection type semiconductor optical amplifier (101) is provided with high reflectivity (the reflectivity is more than or equal to 90%), the other end of the reflection type semiconductor optical amplifier is provided with low reflectivity (the reflectivity is less than or equal to 0.005%), and the low reflectivity end is the output end of the reflection type semiconductor optical amplifier (101); the gain wavelength of the reflection-type semiconductor optical amplifier (101) is in a communication waveband and can be realized by using III-V quantum well or quantum dot materials.
3. The silicon-based narrow linewidth high-power external cavity laser based on transverse magnetic mode as claimed in claim 1, wherein the spot size converter (102) is implemented by using an inverted cone coupler or a suspended waveguide coupler.
4. The Si-based narrow linewidth high-power external cavity laser based on transverse magnetic mode as claimed in claim 1, wherein the phase shifter (103) is a thermo-optic phase shifter or an electro-optic phase shifter.
5. A silicon-based narrow linewidth high power external cavity laser based on transverse magnetic mode as claimed in claim 1 wherein: the Sagnac reflector (106) is composed of a Mach-Zehnder interferometer and a U-shaped waveguide, a phase shifter is arranged on one arm of the Mach-Zehnder interferometer, and the coupling ratio of an input coupler and an output coupler is 50: 50.
6. a silicon-based narrow linewidth high power external cavity laser based on transverse magnetic mode as claimed in claim 1 wherein: except for the reflection-type semiconductor optical amplifier, other components can be realized by silicon waveguides, transverse magnetic mode transmission is supported, and the reflection-type semiconductor optical amplifier and a silicon chip can be aligned through butt coupling.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220085575A1 (en) * | 2020-09-17 | 2022-03-17 | Inphi Corporation | Silicon-photonics-based semiconductor optical amplifier with n-doped active layer |
| CN114256722A (en) * | 2020-09-23 | 2022-03-29 | 中国科学院半导体研究所 | On-chip integrated narrow linewidth laser |
| CN114745057A (en) * | 2022-04-11 | 2022-07-12 | 上海交通大学 | Universal silicon-based integrated optical frequency transmission chip |
| CN114899705A (en) * | 2022-07-12 | 2022-08-12 | 安徽至博光电科技股份有限公司 | Adjustable external cavity laser |
| EP4102657A1 (en) * | 2021-06-09 | 2022-12-14 | Honeywell International Inc. | Systems and methods for a tunable radio frequency synthesizer utilizing optical frequency combs |
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