CN110911950A - High-speed high-linearity silicon-lithium niobate external cavity frequency modulation laser - Google Patents
High-speed high-linearity silicon-lithium niobate external cavity frequency modulation laser Download PDFInfo
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- CN110911950A CN110911950A CN201911179230.8A CN201911179230A CN110911950A CN 110911950 A CN110911950 A CN 110911950A CN 201911179230 A CN201911179230 A CN 201911179230A CN 110911950 A CN110911950 A CN 110911950A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
- H01S3/0637—Integrated lateral waveguide, e.g. the active waveguide is integrated on a substrate made by Si on insulator technology (Si/SiO2)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
Abstract
A high-speed high-linearity silicon-lithium niobate external cavity frequency modulation laser is characterized in that a reflection type semiconductor optical amplifier of the external cavity laser is connected to a phase shifter through a silicon-based light spot size converter, the output end of the phase shifter is connected with the input end of a first micro-ring filter, the output end of the first micro-ring filter is connected with the input end of a second micro-ring filter, and the output end of the second micro-ring filter is connected with the input end of a reflector. And then bonding a lithium niobate thin film above the silicon waveguide. The invention forms a filtering structure by the vernier effect of the two micro-ring filters, and can obtain the laser with wide tuning range and narrow line width. By utilizing the advantages of low loss, strong linear electro-optic effect and high modulation speed of the lithium niobate thin film, the line width of the laser can be further compressed, the output laser power is improved, and high-speed linear frequency modulation is realized.
Description
Technical Field
The invention relates to a frequency modulation laser, in particular to a high-speed high-linearity silicon-lithium niobate external cavity frequency modulation laser.
Background
The development of silicon optical technology has made many breakthroughs and achievements on photoelectric devices such as light sources, modulators, waveguides, detectors and the like. The silicon-based material has low cost and good ductility, can be used for manufacturing optical devices by utilizing a mature silicon CMOS process, and is convenient to integrate with other existing components. Meanwhile, the silicon waveguide has excellent optical transmission performance, is transparent to a communication waveband of 1.1-1.6um, and opens another gate for high-speed and large-capacity communication in the future.
On the existing processing platform, the loss of the silicon waveguide is 2-3dB/cm, and the linear electro-optic effect is weak due to the crystal lattice characteristic of silicon centrosymmetry, so that the optical modulation in silicon mainly depends on the free carrier dispersion effect. However, due to the intrinsic absorption and non-linear nature of free carrier dispersion, the amplitude of the optical modulation is reduced and signal distortion may result when advanced modulation formats are used. This allows silicon optical modulators to exhibit either lower optical bandwidth or higher operating voltage.
Compared with the silicon waveguide, the lithium niobate material has lower loss as the optical waveguide compared with the silicon waveguide, and the transmission loss of 1dB/cm can reduce energy consumption to a great extent. The Pockels coefficient is large, and only the electric field action exists in the crystal, and the transport process of a current carrier does not exist, so that the crystal has an excellent first-order Pockels linear electro-optic effect, a modulator with low power consumption and high speed is easier to realize, and the high-performance optical modulator is still an excellent choice. However, the conventional lithium niobate modulator is formed by a low refractive index contrast waveguide with weak optical confinement, which causes that an optical mode is not well confined in the lithium niobate waveguide, and a microwave electrode must be placed far away from the optical mode to reduce absorption loss as much as possible, for which, the thickness of a cladding must be increased, which causes that the volume of the lithium niobate modulator is too large and the driving voltage is also increased, and the length of a modulation arm must be increased in order to reduce the modulation voltage, which causes that the device volume is larger and the modulation efficiency cannot be improved better.
With the improvement of the process level, the preparation of the ultrathin lithium niobate film becomes possible. The hybrid silicon/lithium niobate material system combines the scalability of silicon photons with the excellent modulation performance of thin film lithium niobate, and is expected to realize a high performance on-chip modulator that simultaneously satisfies low loss, low driving voltage, large bandwidth, high linearity, small footprint, and low manufacturing cost. In recent years, many scholars at home and abroad prove the operability of bonding the lithium niobate thin film to the silicon platform on the insulator, and the combination of the thin film lithium niobate without patterns or the thin film lithium niobate etched into the waveguide makes up the defect of the modulation capability of the silicon waveguide, and utilizes the characteristics of good expandability and low cost of the silicon optical platform. In 2019, a research team of Zhongshan university published in Nature Photonics, the research result of a silicon/lithium niobate Mach-Zehnder modulator based on a heterostructure shows that the on-off keying (OOK) excellent modulation performance of the modulator has the insertion loss of 2.5dB, the voltage-length product of 2.2V-cm, the electro-optical bandwidth of at least 70Hz, and the modulation rates of 112Gb/s and 100Gb/s under the operation of single driving voltage.
Disclosure of Invention
The invention provides a high-speed high-linearity silicon-lithium niobate external cavity frequency modulation laser, which is applied to an external cavity laser by means of a heterogeneous integration technology of a lithium niobate thin film and a silicon waveguide so as to obtain a high-speed high-linearity frequency modulation laser. Through the heterogeneous integration of the lithium niobate thin film and the silicon waveguide, the optical mode partially enters or completely enters the lithium niobate waveguide through the vertical adiabatic coupler, so that the phase of the optical waveguide can be adjusted through the linear electro-optic effect of the lithium niobate material. The laser fully combines the advantages of good integration performance of a silicon optical device and strong linear electro-optic effect of the lithium niobate film, so that the external cavity laser is more excellent in indexes such as line width, linearity, modulation speed and energy consumption.
The technical solution of the invention is as follows:
a high-speed high-linearity silicon-lithium niobate external cavity frequency modulation laser is characterized by comprising a reflection type semiconductor optical amplifier, a light spot size converter, a phase shifter, a first micro-ring filter, a second micro-ring filter and a reflector; the output end of the reflection-type semiconductor optical amplifier is connected with the input end of the light spot size converter, the output end of the light spot size converter is connected with the phase shifter, the output end of the phase shifter is connected with the input end of the first micro-ring filter, the output end of the first micro-ring filter is connected with the input end of the second micro-ring filter, the output end of the second micro-ring filter is connected with the reflector, the output end of the reflector is the output end of the laser, and the phase shifter, the first micro-ring filter, the second micro-ring filter and the reflector are formed by heterogeneous integration of a silicon waveguide and a lithium niobate thin film.
One end of the reflection type semiconductor optical amplifier is provided with high reflectivity (the reflectivity is more than or equal to 90%), the other end of the reflection type semiconductor optical amplifier is provided with low reflectivity (the reflectivity is less than or equal to 0.005%), and the low reflectivity end is the output end of the reflection type semiconductor optical amplifier; the gain wavelength of the reflection-type semiconductor optical amplifier is in a communication waveband and can be realized by using III-V quantum well or quantum dot materials.
The light spot size converter is realized by adopting structures such as an inverted cone coupler or a suspended waveguide mode spot converter.
The reflector adopts a Sagnac (Sagnac) reflection ring or Bragg grating structure, and the reflectivity of the reflector is about 40%.
The lithium niobate thin film can be bonded with the silicon waveguide by using polymer auxiliary bonding, selective oxide group bonding, wafer bonding and other modes, and can be a flat plate layer without etching or a ridge waveguide structure.
The semiconductor optical amplifier and the silicon chip can be aligned through end face butt coupling.
The silicon waveguide can be replaced by a silicon nitride waveguide or a silicon oxide waveguide according to actual requirements.
On the basis of the technical scheme, the mode selection is realized by adjusting the phase shifter, the first micro-ring filter and the second micro-ring filter and aligning the Fabry-Perot cavity of the laser with the resonance wavelength of the vernier effect, and the output wavelength of the laser can be continuously adjustable.
Based on the above technical solution, the size of the first micro-ring filter is slightly different from the size of the second micro-ring filter, so that the vernier effect of the two micro-rings can be used to expand the free frequency spectrum range of the cascade filter.
Compared with the prior art, the invention has the following beneficial effects:
the lithium niobate thin film has small loss, can increase the Q value of a micro-ring, so that the longitudinal mode energy fed back to the III-V gain medium cavity is increased, the single-mode output of the laser is stabilized, the power of the emitted single-mode laser is improved, and the linewidth of the emitted laser is reduced.
The lithium niobate thin film has strong electro-optic effect and good linearity, and can realize higher frequency modulation linearity and higher frequency modulation speed compared with a silicon-based external cavity laser.
Drawings
FIG. 1 is a schematic diagram of an embodiment of a flat thin film lithium niobate-bonded SOI waveguide platform, including a schematic cross-sectional phase shifter.
Fig. 2 is a schematic diagram of an embodiment of bonding a lithium niobate thin film etched into a ridge waveguide on an insulator silicon waveguide platform, which includes a schematic diagram of a phase shifter cross section and a schematic diagram of light entering the lithium niobate ridge waveguide through a vertical adiabatic coupler.
Detailed Description
To further clarify the objects, technical solutions and core advantages of the present invention, the present invention will be described in further detail with reference to the accompanying drawings and examples. The following specific examples are for illustrative purposes only and are not intended to limit the invention.
As shown in fig. 1 and fig. 2, the high-speed and high-linearity silicon-lithium niobate external cavity frequency modulation laser of the present invention includes a reflective semiconductor optical amplifier 101, a spot size converter 102, a phase shifter 103, a first micro-ring filter 104, a second micro-ring filter 105, and a mirror 106; the output end of the reflective semiconductor optical amplifier 101 is connected to the input end of the spot size converter 102, the output end of the spot size converter 102 is connected to the phase shifter 103, the output end of the phase shifter 103 is connected to the input end of the first micro-ring filter 104, the output end of the first micro-ring filter 104 is connected to the input end of the second micro-ring filter 105, the output end of the second micro-ring filter 105 is connected to the mirror 106, the output end of the mirror 106 is the output end of the laser, and the phase shifter 103, the first micro-ring filter 104, the second micro-ring filter 105 and the mirror 106 are formed by heterointegration of a silicon waveguide and a lithium niobate thin film.
In the embodiment shown in fig. 1 and 2, one end of the reflective semiconductor optical amplifier 101 is set to have a high reflectivity (reflectivity ≥ 90%), the other end is set to have a low reflectivity (reflectivity ≤ 0.005%), and the low reflectivity end is connected to the spot-size converter 102.
In the embodiments illustrated in fig. 1 and 2, the spot size converter 102 is implemented by using an inverted cone coupler or a suspended waveguide template converter.
In the embodiments shown in fig. 1 and fig. 2, the first micro-ring filter 104 and the second micro-ring filter 105 may also have other structures with filtering functions. In the embodiment shown in fig. 1 and 2, the reflector 106 is a Sagnac reflective ring with a reflectivity of about 40%, and in an actual implementation process, other reflective structures such as bragg gratings may also be used.
The phase shifter 103, the first micro-ring filter 104, the second micro-ring filter 105 and the mirror 106 in the external cavity structure of fig. 1 are all based on a lithium niobate and silicon hybrid integrated waveguide, and the high-speed adjustment of the waveguide phase is realized through the linear electro-optic effect of lithium niobate.
In the embodiment illustrated in fig. 1, the lithium niobate thin film is bonded to the silicon waveguide by a DVS-BCB adhesive. The optical mode exists in the silicon and lithium niobate composite waveguide in a supermode state.
In the embodiments shown in fig. 1 and 2, the silicon waveguide can be replaced by a silicon nitride waveguide or a silicon oxide waveguide according to practical requirements.
In the embodiment illustrated in fig. 2, light enters the upper lithium niobate thin film ridge waveguide through a vertical adiabatic coupler.
The cross-sectional perspective view in the embodiment depicted in fig. 2 illustrates the entry of light into the lithium niobate ridge waveguide through a vertical adiabatic coupler using the simplest inverted tapered adiabatic coupler structure.
In the embodiments shown in fig. 1 and 2, the remaining components except the reflective semiconductor optical amplifier 101 are implemented by a silicon-lithium niobate composite waveguide. The reflection-type semiconductor optical amplifier 101 and the silicon-lithium niobate external cavity chip are aligned in a butt coupling mode.
In the embodiment shown in fig. 1 and 2, the free spectral ranges of the first micro-ring filter 104 and the second micro-ring filter 105 are shown
Where λ is the resonant wavelength of the microring, Δ λ is the wavelength spacing between adjacent resonant peaks, ngRefractive index of waveguide group, L, being a microringrThe perimeter of the microring. Free spectral range FSR of the first micro-ring filter 104 and the second micro-ring filter 1051And FSR2With small phase difference, a vernier effect filter can be formed, the free spectral range of which
The resonance wavelength of the second micro-ring filter and the center wavelength of the first micro-ring filter can be respectively adjusted through respective phase shifters.
In the embodiment shown in fig. 1 and 2, the mode selection is realized by adjusting the phase shifter 103, the first micro-ring filter 104 and the second micro-ring filter 105, and the Fabry-Perot cavity of the laser is aligned with the resonant wavelength of the vernier effect, so that the output wavelength of the laser can be continuously adjusted.
In the embodiment illustrated in fig. 1, laser light from the reflective semiconductor optical amplifier 101 is coupled into the silicon-lithium niobate external cavity chip through the spot-size converter 102, and the optical mode exists in both silicon and lithium niobate materials in a supermode form, with most of the energy existing in the silicon waveguide. Light is input from the input end of the first micro-ring filter 104 through the phase shifter 103, output from the output end of the first micro-ring filter 104, input through the input end of the second micro-ring filter 105, output from the output end of the second micro-ring filter 105, enter the mirror 106, and is partially transmitted and partially fed back. The micro-ring Q value is improved due to the low loss characteristic of the lithium niobate film, the longitudinal mode energy selected by the vernier effect is strengthened, and the whole resonant cavity Q value is improved, so that the line width of the finally emitted laser is reduced, and the output power is increased; the laser has the advantages of high linear electro-optic coefficient and high modulation speed due to the benefit of the lithium niobate film, and the laser can have higher frequency modulation speed in the frequency modulation process and ensure the frequency modulation linearity.
In the embodiment shown in fig. 2, laser light emitted from the reflective semiconductor optical amplifier 101 is coupled into the silicon-lithium niobate external cavity chip through the spot size converter 102, the optical mode is coupled into the lithium niobate waveguide from the silicon waveguide through the vertical adiabatic coupler, and most of the energy exists in the lithium niobate waveguide. Light is input from the input end of the first micro-ring filter 104 through the phase shifter 103, output from the output end of the first micro-ring filter 104, input through the input end of the second micro-ring filter 105, output from the output end of the second micro-ring filter 105, enter the mirror 106, and is partially transmitted and partially fed back. The micro-ring Q value is improved due to the low loss characteristic of the lithium niobate film, the longitudinal mode energy selected by the vernier effect is strengthened, and the whole resonant cavity Q value is improved, so that the line width of the finally emitted laser is reduced, and the output power is increased; the laser has the advantages of high linear electro-optic coefficient and high modulation speed due to the benefit of the lithium niobate film, and the laser can have higher frequency modulation speed in the frequency modulation process and ensure the frequency modulation linearity.
The present invention is not limited to the above-described embodiments, and it will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the principle of the present invention, and such modifications and improvements are also considered to be within the scope of the present invention. Details not described in this specification are within the skill of the art that are well known to those skilled in the art.
Claims (7)
1. A high-speed high-linearity silicon-lithium niobate external cavity frequency modulation laser is characterized by comprising a reflection type semiconductor optical amplifier (101), a spot size converter (102), a phase shifter (103), a first micro-ring filter (104), a second micro-ring filter (105) and a reflector (106); the output end of the reflection type semiconductor optical amplifier (101) is connected with the input end of the spot size converter (102), the output end of the spot size converter (102) is connected with the phase shifter (103), the output end of the phase shifter (103) is connected with the input end of the first micro-ring filter (104), the output end of the first micro-ring filter (104) is connected with the input end of the second micro-ring filter (105), the output end of the second micro-ring filter (105) is connected with the reflector (106), the output end of the reflector (106) is the output end of the laser, and the phase shifter (103), the first micro-ring filter (104), the second micro-ring filter (105) and the reflector (106) are formed by heterogeneous integration of a silicon waveguide and a lithium niobate thin film.
2. The high-speed high-linearity silicon-lithium niobate external cavity frequency modulation laser of claim 1, wherein: one end of the reflection type semiconductor optical amplifier (101) is provided with high reflectivity (the reflectivity is more than or equal to 90%), the other end of the reflection type semiconductor optical amplifier is provided with low reflectivity (the reflectivity is less than or equal to 0.005%), and the low reflectivity end is the output end of the reflection type semiconductor optical amplifier (101); the gain wavelength of the reflection-type semiconductor optical amplifier (101) is in a communication waveband and can be realized by using III-V quantum well or quantum dot materials.
3. The high-speed high-linearity silicon-lithium niobate external cavity frequency modulation laser according to claim 1, wherein the spot size converter (103) is realized by using an inverted cone coupler or a suspended waveguide mode spot converter or other structures.
4. The high-speed high-linearity silicon-lithium niobate external cavity frequency modulation laser of claim 1, wherein: the reflector (106) adopts a Sagnac (Sagnac) reflection ring or Bragg grating structure, and the reflectivity of the reflector is about 40%.
5. The high-speed high-linearity silicon-lithium niobate external cavity frequency modulation laser of claim 1, wherein: the lithium niobate thin film can be bonded with the silicon waveguide by using polymer auxiliary bonding, selective oxide group bonding, wafer bonding and other modes, and can be a flat plate layer without etching or a ridge waveguide structure.
6. The high-speed high-linearity silicon-lithium niobate external cavity frequency modulation laser of claim 1, wherein: the semiconductor optical amplifier and the silicon-lithium niobate chip can be aligned through end face butt coupling.
7. The high-speed high-linearity silicon-lithium niobate external cavity frequency-modulated laser of claim 1, wherein the silicon waveguide can be replaced by a silicon nitride waveguide or a silicon oxide waveguide in combination with actual requirements.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112444912A (en) * | 2020-10-22 | 2021-03-05 | 中国电子科技集团公司第五十五研究所 | High-speed integrated adjustable light delay line and preparation method thereof |
| CN113540063A (en) * | 2021-07-14 | 2021-10-22 | Nano科技(北京)有限公司 | Silicon optical integrated chip compatible with germanium-silicon detector and thin-film lithium niobate modulator |
| CN113809634A (en) * | 2021-08-31 | 2021-12-17 | 中山大学 | Hybrid integrated external cavity tunable laser based on lithium niobate photonic waveguide |
| CN114024193A (en) * | 2021-10-27 | 2022-02-08 | 华中科技大学 | High-speed linear frequency modulation external cavity laser based on thin-film lithium niobate |
| WO2022100096A1 (en) * | 2020-11-10 | 2022-05-19 | 华为技术有限公司 | Optical waveguide device and manufacturing method therefor, and electro-optic modulator |
| WO2022109982A1 (en) * | 2020-11-26 | 2022-06-02 | 苏州易锐光电科技有限公司 | Bragg grating chip |
| CN115220151A (en) * | 2022-07-19 | 2022-10-21 | 欧梯恩智能科技(苏州)有限公司 | Silicon-based optical waveguide demodulation device and method based on vernier effect of micro-ring resonant cavity |
| WO2023273565A1 (en) * | 2021-06-29 | 2023-01-05 | 华为技术有限公司 | Frequency-tunable semiconductor laser |
| CN117096722A (en) * | 2023-09-08 | 2023-11-21 | 之江实验室 | Hybrid integrated narrow linewidth laser |
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| CN113540063B (en) * | 2021-07-14 | 2024-03-05 | Nano科技(北京)有限公司 | Silicon optical integrated chip compatible with germanium-silicon detector and thin film lithium niobate modulator |
| CN113540063A (en) * | 2021-07-14 | 2021-10-22 | Nano科技(北京)有限公司 | Silicon optical integrated chip compatible with germanium-silicon detector and thin-film lithium niobate modulator |
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| CN114024193A (en) * | 2021-10-27 | 2022-02-08 | 华中科技大学 | High-speed linear frequency modulation external cavity laser based on thin-film lithium niobate |
| CN114024193B (en) * | 2021-10-27 | 2024-03-19 | 华中科技大学 | High-speed linear frequency modulation external cavity laser based on film lithium niobate |
| CN115220151A (en) * | 2022-07-19 | 2022-10-21 | 欧梯恩智能科技(苏州)有限公司 | Silicon-based optical waveguide demodulation device and method based on vernier effect of micro-ring resonant cavity |
| CN115220151B (en) * | 2022-07-19 | 2023-11-14 | 欧梯恩智能科技(苏州)有限公司 | Silicon-based optical waveguide demodulation device and method based on micro-ring resonant cavity vernier effect |
| CN117096722A (en) * | 2023-09-08 | 2023-11-21 | 之江实验室 | Hybrid integrated narrow linewidth laser |
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Application publication date: 20200324 |