CN110854300A - Display device, display panel and manufacturing method thereof - Google Patents
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- CN110854300A CN110854300A CN201911180989.8A CN201911180989A CN110854300A CN 110854300 A CN110854300 A CN 110854300A CN 201911180989 A CN201911180989 A CN 201911180989A CN 110854300 A CN110854300 A CN 110854300A
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present disclosure relates to the field of display technologies, and relates to a display panel, a method for manufacturing the display panel, and a display device, wherein the display panel includes: the display layer is arranged on one side of the substrate, the packaging layer is arranged on one side, far away from the substrate, of the display layer, the packaging layer is made of a metal material, and a hydrophobic micro-nano structure is formed on the surface of the metal layer. The display panel provided by the disclosure, the packaging layer has super-hydrophobicity, and can effectively prevent water vapor from permeating into the display panel, thereby improving the packaging effect of the display panel and prolonging the service life of the display panel.
Description
Technical Field
The disclosure relates to the technical field of display, and particularly to a display panel, a manufacturing method of the display panel and a display device.
Background
Organic Light-Emitting Diode (OLED) display devices have been classified as a next generation display technology with great development prospects because of their advantages of being thin, Light, wide viewing angle, active Light emission, continuously adjustable Light emission color, low cost, fast response speed, low energy consumption, low driving voltage, wide working temperature range, simple production process, high Light-Emitting efficiency, flexible display, etc.
The OLED device is very sensitive to external factors such as water vapor and oxygen, for example, once an oxidation reaction occurs, the stability of the OLED device is deteriorated and the service life of the OLED device is greatly reduced, so that the effective packaging structure is adopted to prevent the water vapor and the oxygen from entering the OLED device, and the service life of the OLED device can be prolonged.
It is to be noted that the information disclosed in the above background section is only for enhancement of understanding of the background of the present disclosure, and thus may include information that does not constitute prior art known to those of ordinary skill in the art.
Disclosure of Invention
The present disclosure is directed to a display panel, a method for manufacturing the display panel, and a display device, which can effectively prevent water vapor from penetrating into the display panel, thereby improving the packaging effect of the display panel and prolonging the service life of the display panel.
According to an aspect of the present disclosure, there is provided a display panel including:
a substrate;
the display layer is arranged on one side of the substrate;
the packaging layer is arranged on one side, far away from the substrate, of the display layer and made of a metal material, and a hydrophobic micro-nano structure is formed on the surface of the metal layer.
In an exemplary embodiment of the present disclosure, the micro-nano structure includes a plurality of micro-nano pillars extending from a surface of the encapsulation layer.
In an exemplary embodiment of the present disclosure, the diameter of the micro-nano column is 10nm to 1000 nm.
In an exemplary embodiment of the present disclosure, the height of the micro-nano pillar is 10nm to 1000 nm.
In an exemplary embodiment of the disclosure, a center distance between two adjacent micro-nano columns is 10nm to 500 nm.
In an exemplary embodiment of the disclosure, the infiltration angle of the micro-nano structure and water vapor is 110 to 160 °.
In an exemplary embodiment of the present disclosure, a layer thickness of the encapsulation layer is 150nm to 1000 nm.
In an exemplary embodiment of the present disclosure, the material of the encapsulation layer includes at least one of aluminum, neodymium, copper, and silver.
According to another aspect of the present disclosure, there is provided a manufacturing method of a display panel, the manufacturing method including:
providing a substrate;
forming a display layer on one side of the substrate;
forming an encapsulation layer on one side of the display layer, which is far away from the substrate, wherein the encapsulation layer is made of a metal material;
and forming a hydrophobic micro-nano structure on the surface of the packaging layer.
According to still another aspect of the present disclosure, there is provided a display device including the display panel described above.
According to the display panel, the packaging layer is made of the metal material, the hydrophobic micro-nano structure is formed on the surface of the metal material, the packaging layer with the micro-nano structure on the surface plays a packaging role, and water vapor can be effectively prevented from permeating into the display device, so that the packaging effect of the device is improved, and the service life of the device is prolonged.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure. It is to be understood that the drawings in the following description are merely exemplary of the disclosure, and that other drawings may be derived from those drawings by one of ordinary skill in the art without the exercise of inventive faculty.
Fig. 1 is a schematic cross-sectional view of a display panel according to an embodiment of the disclosure;
fig. 2 is a flowchart of a method for manufacturing a display panel according to an embodiment of the disclosure.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the disclosure. One skilled in the relevant art will recognize, however, that the subject matter of the present disclosure can be practiced without one or more of the specific details, or with other methods, steps, etc. In other instances, well-known technical solutions have not been shown or described in detail to avoid obscuring aspects of the present disclosure.
The terms "a," "an," "the," and "said" are used to indicate the presence of one or more elements/components/etc.; the terms "comprising" and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. other than the listed elements/components/etc.; the terms "first," "second," and the like are used merely as labels, and are not limiting on the number of their objects.
First, in the present exemplary embodiment, there is provided a display panel, as shown in fig. 1, including: substrate 10, display layer 30 and encapsulation layer 60, one side of substrate 10 is located to display layer 30, and encapsulation layer 60 is located one side that display layer 30 kept away from substrate 10, and encapsulation layer 60 is the metal material, is formed with hydrophobic micro-nano structure on the surface of metal level, and hydrophobic micro-nano structure can be the unevenness's that has hydrophobic characteristic surface on encapsulation layer 60.
According to the display panel, the packaging layer is made of the metal material, the hydrophobic micro-nano structure is formed on the surface of the metal material, the packaging layer with the micro-nano structure on the surface plays a packaging role, and water vapor can be effectively prevented from permeating into the display device, so that the packaging effect of the device is improved, and the service life of the device is prolonged.
Specifically, by forming the rugged micro-nano structure with super-hydrophobic property on the surface of the encapsulation layer 60, a nanoscale extremely-thin air layer is formed on the surface of the encapsulation layer 60, and when external moisture contacts the encapsulation layer 60, direct contact between the moisture and the encapsulation layer 60 can be reduced due to the air layer, so that the water and oxygen blocking capability of the encapsulation layer is improved.
As shown in fig. 1, the micro-nano structure includes a plurality of micro-nano pillars extending from a surface of the encapsulation layer 60. Wherein the diameter of the micro-nano column is 10nm to 1000nm, such as 10nm, 100nm, 200nm, 500nm, 700nm, 1000nm, etc., which are not listed; the height of the micro-nano column is 10nm to 1000nm, such as 10nm, 100nm, 200nm, 500nm, 700nm, 1000nm and the like, which are not listed; the center-to-center distance between two adjacent micro-nano columns is 10nm to 500nm, such as 10nm, 100nm, 200nm, 300nm, 400nm, 500nm, etc., which are not listed here. Of course, the diameter of the micro-nano column may also be less than 10nm or greater than 1000nm, the height of the micro-nano column may also be less than 10nm or greater than 1000nm, and the center distance between two adjacent micro-nano columns may also be less than 10nm or greater than 500nm, which is not limited in this disclosure.
In addition, the micro-nano structure may include a plurality of triangular, hemispherical, trapezoidal or other irregular nano-scale micro-nano structures extending from the surface of the encapsulation layer 60, which is not limited by the present disclosure, and all the transformations on the micro-nano structure belong to the protection scope of the present disclosure.
Specifically, the layer thickness of the encapsulation layer 60 is 150nm to 1000nm to ensure the formation of the micro-nano structure. The layer thickness of the encapsulation layer 60 can be, for example, 150nm, 200nm, 400nm, 500nm, 700nm, 1000nm, etc., which are not listed here, but of course, the layer thickness of the encapsulation layer 60 can also be less than 150nm or greater than 500nm, which is not limited by the present disclosure.
Specifically, the infiltration angle of the micro-nano structure and water vapor is 110-160 degrees, so that the micro-nano structure on the white surface of the packaging layer 60 has good hydrophobicity. The wetting angle between the micro-nano structure and the water vapor can be, for example, 110 °, 120 °, 130 °, 140 °, 150 °, 160 °, and the like, which are not listed here. Of course, the wetting angle between the micro-nano structure and the water vapor can also be less than 110 degrees or more than 160 degrees, which is not limited by the disclosure.
Wherein, the material of the encapsulation layer 60 includes at least one of aluminum, neodymium, copper and silver. The metal material is selected to form the packaging layer 60, so that a micro-nano structure can be formed on the surface of the packaging layer 60 conveniently. Of course, other metallic materials, such as zinc, are also possible, as the present disclosure is not limited in this regard.
Specifically, the substrate 10 may be a substrate of an inorganic material or a substrate of an organic material. For example, in one embodiment of the present disclosure, the material of the substrate 10 may be a glass material such as soda-lime glass (soda-lime glass), quartz glass, sapphire glass, or a metal material such as stainless steel, aluminum, nickel, or the like. In another embodiment of the present disclosure, the material of the substrate 10 may be Polymethyl methacrylate (PMMA), Polyvinyl alcohol (PVA), Polyvinyl phenol (PVP), polyether sulfone (PES), polyimide, polyamide, polyacetal, Polycarbonate (PC), Polyethylene terephthalate (PET), Polyethylene naphthalate (PEN), or a combination thereof. In another embodiment of the present disclosure, the substrate 10 may also be a flexible substrate, for example, the material of the substrate may be Polyimide (PI).
Specifically, the display layer 30 is used to implement a pattern display, and in the display layer 30, the display unit may be an Organic Light Emitting Diode (OLED), a liquid crystal display unit, a Light Emitting Diode (LED), or other feasible displayable units. It is understood that the display unit may implement autonomous light emission, such as an organic light emitting diode or a light emitting diode, or may implement light emission control by means of a backlight, such as a liquid crystal display unit may control whether light of the backlight passes through a light emitting region to implement display.
Further, the display layer 30 may further include a driving layer 20 for driving each light emitting unit 40. The driving layer 20 may include a thin film transistor and a capacitor, wherein the thin film transistor may be an LTPS-TFT (low temperature polysilicon-thin film transistor) or an oxide-TFT (oxide-thin film transistor), for example, an IGZO-TFT (indium gallium zinc oxide-thin film transistor), which is not limited in this disclosure. The thin film transistor may be a top gate type or a bottom gate type, and the disclosure is not limited thereto.
Specifically, a side of the display layer 30 away from the substrate 10 is provided with a common electrode layer 50, and the common electrode layer 50 may be a common cathode or a common anode. The material of the common electrode layer 50 may be a metal material, for example, the metal may be platinum, gold, silver, aluminum, chromium, barium, sodium, palladium, iron, manganese, or a combination thereof. That is, the package layer 60 and the common electrode layer 50 may be made of the same metal material, a metal layer may be formed as the common electrode layer 50 and the package layer 60 through a deposition process, and a micro-nano structure may be directly formed on the surface of the metal layer, so that the upper region of the metal layer is used as the package layer 60.
In addition, the display panel may further include a passivation layer and a protective film layer disposed on a side of the encapsulation layer 60 away from the substrate 10, which is not limited by the present disclosure.
The following are embodiments of the disclosed method that may be used to implement embodiments of the disclosed apparatus. For details not disclosed in the embodiments of the disclosed method, refer to the embodiments of the disclosed apparatus.
An embodiment of the present disclosure also provides a method for manufacturing a display panel, as shown in fig. 2, including:
step S100, providing a substrate;
step S200, forming a display layer on one side of a substrate;
step S300, forming a packaging layer on one side of the display layer far away from the substrate, wherein the packaging layer is made of a metal material;
and S400, forming a hydrophobic micro-nano structure on the surface of the packaging layer.
According to the display panel, the packaging layer is made of the metal material, the hydrophobic micro-nano structure is formed on the surface of the metal material, the packaging layer with the micro-nano structure on the surface plays a packaging role, and water vapor can be effectively prevented from permeating into the display device, so that the packaging effect of the device is improved, and the service life of the device is prolonged.
Next, each step of the manufacturing method of the display panel in the present exemplary embodiment will be further described.
In step S100, a substrate is provided.
Specifically, as shown in fig. 1, the substrate 10 may be formed by deposition or the like, and the material of the substrate 10 may be an inorganic material or an organic material, for example, the inorganic material may be a glass material such as soda-lime glass, quartz glass, sapphire glass, or a metal material of various metals such as stainless steel, aluminum, nickel, or an alloy thereof; the organic material may be polymethylmethacrylate, polyvinyl alcohol, polyvinyl phenol, polyethersulfone, polyimide, polyamide, or a combination thereof. The substrate 10 may be a flexible substrate.
In step S200, a display layer is formed on one side of a substrate.
Specifically, a buffer layer may be formed on one side of the substrate 10 by deposition, spraying, or the like, and the material of the buffer layer may be silicon oxide, silicon oxynitride, silicon nitride, or a combination of the above materials; next, a driving layer 20 is formed on the buffer layer, and the driving layer 20 includes a plurality of thin film transistors. Of course, the driving layer 20 may be directly formed on the substrate 10. The driving layer 20 specifically includes an active layer formed on the buffer layer on a side away from the substrate 10 by a physical vapor deposition method, a chemical vapor deposition method, a spin coating method, or a combination thereof, and the active layer partially covers the buffer layer; forming a gate insulating layer covering the buffer layer and the active layer on the side of the buffer layer away from the substrate 10 by physical vapor deposition, chemical vapor deposition, spin coating or a combination thereof, and forming a gate layer on the side of the gate insulating layer away from the substrate 10 by deposition or the like; forming an interlayer dielectric layer covering the gate insulating layer and the gate electrode layer on one side of the gate insulating layer far away from the substrate 10 by deposition and other processes; forming source and drain via holes on the interlayer dielectric layer and the gate insulating layer by exposure display, etching and other processes, wherein the source via hole and the drain via hole are respectively positioned on two sides of the gate layer and are communicated with the active layer; and forming a source electrode and a drain electrode in the source electrode through hole and the drain electrode through deposition and other processes so as to form the thin film transistor.
Forming a flat layer on one side of the interlayer dielectric layer far away from the substrate 10 by deposition and other processes; forming via holes exposing the drain electrodes on the flat layer through processes such as etching, and forming a first electrode layer on one side, far away from the substrate 10, of the flat layer through processes such as deposition, wherein the first electrode layer comprises a plurality of first electrodes, and the first electrodes are connected with the drain electrodes in a one-to-one correspondence mode through the via holes; forming a pixel defining layer on one side of the flat layer far away from the substrate 10 by deposition and other processes, forming a plurality of through holes on the pixel defining layer by etching and other processes, and exposing each first electrode layer by each through hole; forming a light emitting unit 40 on the pixel defining layer, wherein the light emitting unit 40 may include a hole injection layer, a hole transport layer, a light emitting material layer, an electron transport layer and an electron injection layer; a second electrode layer, which is a common electrode layer 50, is then formed on the side of the light emitting unit 40 away from the substrate 10 by deposition or the like, wherein the first electrode layer may be an anode layer, and the second electrode layer may be a transparent common cathode layer.
In step S300, an encapsulation layer is formed on a side of the display layer away from the substrate, where the encapsulation layer is made of a metal material.
Specifically, a metal material is adopted to form the packaging layer 60 on one side of the display layer 30 far away from the substrate 10 by a physical vapor deposition method, a chemical vapor deposition method, a spin coating method or a combination thereof, then a nano microstructure is formed on the metal surface of the packaging layer 60 by adopting a laser etching technology, the metal surface is irradiated by a raster scanning focused femtosecond laser pulse, and a plurality of hydrophobic micro-nano columns extending from the surface are formed on the metal surface. In addition, the method can also be realized by adopting a deposition method, such as physical vapor deposition and chemical vapor deposition, and the method mainly utilizes the physical and chemical process of vapor generation to form a hydrophobic metal layer on the surface, and can be used for realizing the manufacturing of a coating with a micro-nano structure, and the technologies of a bionic template, ion etching and the like. Other methods, such as anodization, can also be used by those skilled in the art to form the micro-nano structure on the surface of the encapsulation layer, which is not limited by the present disclosure.
In addition, the common electrode layer 50 may be a common cathode or a common anode. The material of the common electrode layer 50 may be a metal material, for example, the metal may be platinum, gold, silver, aluminum, chromium, barium, sodium, palladium, iron, manganese, or a combination thereof. That is to say, the encapsulation layer 60 and the common electrode layer 50 may be made of the same metal material, a metal layer may be formed as the common electrode layer 50 and the encapsulation layer 60 through a deposition process, and a micro-nano structure may be directly formed on the surface of the metal layer, so that the upper region of the metal layer may be used as the encapsulation layer 60, thereby reducing the process steps of the display panel manufacturing process, improving the display panel manufacturing efficiency, and reducing the manufacturing cost.
The rugged micro-nano structure with the super-hydrophobic property is formed on the surface of the packaging layer 60, so that a nanoscale extremely-thin air layer is formed on the surface of the packaging layer 60, and when external moisture is in contact with the packaging layer 60, the moisture can be reduced from being in direct contact with the packaging layer 60 due to the air layer, and the water-oxygen barrier capability of the packaging layer is improved.
Wherein the diameter of the micro-nano column is 10nm to 1000nm, such as 10nm, 100nm, 200nm, 500nm, 700nm, 1000nm, etc., which are not listed; the height of the micro-nano column is 10nm to 1000nm, such as 10nm, 100nm, 200nm, 500nm, 700nm, 1000nm and the like, which are not listed; the center-to-center distance between two adjacent micro-nano columns is 10nm to 500nm, such as 10nm, 100nm, 200nm, 300nm, 400nm, 500nm, etc., which are not listed here. Of course, the diameter of the micro-nano column may also be less than 10nm or greater than 1000nm, the height of the micro-nano column may also be less than 10nm or greater than 1000nm, and the center distance between two adjacent micro-nano columns may also be less than 10nm or greater than 500nm, which is not limited in this disclosure.
In addition, the micro-nano structure may include a plurality of triangular, hemispherical, trapezoidal or other irregular nano-scale micro-nano structures extending from the surface of the encapsulation layer 60, which is not limited by the disclosure, and all the transformations on the micro-nano structure belong to the protection scope of the disclosure.
Wherein the layer thickness of the packaging layer 60 is 150 nm-1000 nm to ensure the formation of the micro-nano structure. The layer thickness of the encapsulation layer 60 can be, for example, 150nm, 200nm, 400nm, 500nm, 700nm, 1000nm, etc., which are not listed here, but of course, the layer thickness of the encapsulation layer 60 can also be less than 150nm or greater than 500nm, which is not limited by the present disclosure.
The wetting angle of the micro-nano structure and water vapor is 110-160 degrees, so that the micro-nano structure on the white surface of the packaging layer 60 has good hydrophobicity. The wetting angle between the micro-nano structure and the water vapor can be, for example, 110 °, 120 °, 130 °, 140 °, 150 °, 160 °, and the like, which are not listed here. Of course, the wetting angle between the micro-nano structure and the water vapor can also be less than 110 degrees or more than 160 degrees, which is not limited by the disclosure.
Wherein, the material of the encapsulation layer 60 includes at least one of aluminum, neodymium, copper and silver. The metal material is selected to form the packaging layer 60, so that a micro-nano structure can be formed on the surface of the packaging layer 60 conveniently. Of course, other metallic materials, such as zinc, are also possible, as the present disclosure is not limited in this regard.
In addition, the manufacturing method of the display panel further includes forming a passivation layer and a protection film layer stacked on the side of the encapsulation layer 60 away from the substrate 10, and those skilled in the art may also provide more other layers, such as a cover plate, which is not limited by the present disclosure.
It should be noted that although the various steps of the methods of the present disclosure are depicted in the drawings in a particular order, this does not require or imply that these steps must be performed in this particular order, or that all of the depicted steps must be performed, to achieve desirable results. Additionally or alternatively, certain steps may be omitted, multiple steps combined into one step execution, and/or one step broken down into multiple step executions, etc.
Embodiments of the present disclosure also provide a display device including the display panel of the above embodiment. The display device can be a mobile phone, a tablet computer, a television or other terminal equipment with a display panel, and the beneficial effects of the display device can be referred to the beneficial effects of the display panel, which are not described in detail herein.
Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.
Claims (10)
1. A display panel, comprising:
a substrate;
the display layer is arranged on one side of the substrate;
the packaging layer is arranged on one side, far away from the substrate, of the display layer and made of a metal material, and a hydrophobic micro-nano structure is formed on the surface of the packaging layer.
2. The display panel of claim 1, wherein the micro-nano structure comprises a plurality of micro-nano pillars extending from a surface of the encapsulation layer.
3. The display panel according to claim 2, wherein the diameter of the micro-nano column is 10nm to 1000 nm.
4. The display panel according to claim 2, wherein the height of the micro-nano column is 10nm to 1000 nm.
5. The display panel according to claim 2, wherein a center distance between two adjacent micro-nano columns is 10nm to 500 nm.
6. The display panel of claim 1, wherein a wetting angle of the micro-nano structure and water vapor is 110-160 °.
7. The display panel according to claim 1, wherein a layer thickness of the encapsulation layer is 150nm to 1000 nm.
8. The display panel according to claim 1, wherein the material of the encapsulation layer comprises at least one of aluminum, neodymium, copper, and silver.
9. A method of manufacturing a display panel, comprising:
providing a substrate;
forming a display layer on one side of the substrate;
forming an encapsulation layer on one side of the display layer, which is far away from the substrate, wherein the encapsulation layer is made of a metal material;
and forming a hydrophobic micro-nano structure on the surface of the packaging layer.
10. A display device characterized by comprising the display panel according to any one of claims 1 to 8.
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| CN201911180989.8A CN110854300A (en) | 2019-11-27 | 2019-11-27 | Display device, display panel and manufacturing method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112261845A (en) * | 2020-10-28 | 2021-01-22 | 武汉第二船舶设计研究所(中国船舶重工集团公司第七一九研究所) | Prevent fine passageway liquid cooling system of condensation |
| WO2021155629A1 (en) * | 2020-02-07 | 2021-08-12 | 武汉华星光电半导体显示技术有限公司 | Display device and manufacturing method therefor |
| WO2021253547A1 (en) * | 2020-06-17 | 2021-12-23 | Tcl华星光电技术有限公司 | Substrate and method for preparing same, and display panel |
Citations (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1041067A (en) * | 1996-07-24 | 1998-02-13 | Matsushita Electric Ind Co Ltd | Organic electroluminescent element |
| JP2001185348A (en) * | 1999-12-27 | 2001-07-06 | Toppan Printing Co Ltd | Photoelectric conversion element and its manufacturing method |
| US20030124341A1 (en) * | 1998-04-02 | 2003-07-03 | Cambridge Display Technology Limited | Flexible substrates for organic devices |
| JP2003344640A (en) * | 2002-05-29 | 2003-12-03 | Canon Inc | Optical element and method for manufacturing the same |
| US20070048892A1 (en) * | 2005-08-26 | 2007-03-01 | Aaron Wadell | Encapsulating electrode |
| KR20070050764A (en) * | 2006-06-29 | 2007-05-16 | 주식회사 대우일렉트로닉스 | Method for fabricating oled display device |
| CN101704410A (en) * | 2009-12-03 | 2010-05-12 | 上海交通大学 | Nano superhydrophobic surface used for airplane antifreezing and deicing and preparation method thereof |
| CN101844272A (en) * | 2010-01-27 | 2010-09-29 | 长春理工大学 | Method and system for manufacturing self-cleaning surface structure by adopting laser interference photolithography technology |
| KR20110060427A (en) * | 2009-11-30 | 2011-06-08 | 엘지디스플레이 주식회사 | Organic light emitting diodde desplay device and fabricating method thereof |
| KR20110065777A (en) * | 2009-12-10 | 2011-06-16 | 엘지디스플레이 주식회사 | Flexible organic light emitting diodde desplay device and fabricating method of the same |
| CN102167280A (en) * | 2011-01-13 | 2011-08-31 | 西北工业大学 | Super-hydrophobic silicon micron-nano composite structure and preparation method thereof |
| US20110273077A1 (en) * | 2010-05-04 | 2011-11-10 | Samsung Mobile Display Co., Ltd. | Organic light emitting display device and method of manufacturing the same |
| CN102779747A (en) * | 2012-07-30 | 2012-11-14 | 江苏物联网研究发展中心 | Machining method of nano column/needle forest structure |
| CN102943246A (en) * | 2012-11-26 | 2013-02-27 | 四川材料与工艺研究所 | Method for preparing metal surface super-hydrophobicity aluminum coating |
| US20130064990A1 (en) * | 2011-09-09 | 2013-03-14 | Weixing Lu | Systems and Methods for Super-Hydrophobic and Super-Oleophobic Surface Treatments |
| CN103077993A (en) * | 2013-01-23 | 2013-05-01 | 华中科技大学 | Solar cell with double-sided heterojunction structure and preparation method for solar cell |
| CN103395739A (en) * | 2013-07-22 | 2013-11-20 | 江苏物联网研究发展中心 | Preparation method of micro-concave mirror |
| CN103738913A (en) * | 2013-12-31 | 2014-04-23 | 中山大学 | Method for manufacturing quasi-three-dimensional micron-nanometer column array |
| CN104310307A (en) * | 2014-11-03 | 2015-01-28 | 江苏物联网研究发展中心 | Method for imaging processing of nanorod/nanoneedle forest structure |
| US20150125975A1 (en) * | 2011-05-11 | 2015-05-07 | Edward Feng | Thin film encapsulation of organic light emitting diodes |
| KR20160043447A (en) * | 2014-10-13 | 2016-04-21 | 엘지디스플레이 주식회사 | Organic light emitting display device having hydrophobi bank layer and method of fanricating thereof |
| KR20160059818A (en) * | 2014-11-19 | 2016-05-27 | 엘지디스플레이 주식회사 | Organic light emitting display device |
| CN105870159A (en) * | 2016-06-07 | 2016-08-17 | 京东方科技集团股份有限公司 | Organic light-emitting diode display panel, display device and manufacturing method |
| CN106495497A (en) * | 2016-09-21 | 2017-03-15 | 华北电力大学 | A kind of preparation method of surface anti-reflection self-cleaning structure |
| CN106571430A (en) * | 2016-09-18 | 2017-04-19 | 深圳市核高基科技有限公司 | Microdisplay device packaging structure and technology |
| CN106992268A (en) * | 2017-04-28 | 2017-07-28 | 京东方科技集团股份有限公司 | A kind of organic light emitting diode device and its manufacture method, display device |
| CN207637810U (en) * | 2017-12-18 | 2018-07-20 | 长理纳米生物技术（长春）有限公司 | Silicon photrouics with superhydrophobic surface structure |
| CN109860420A (en) * | 2019-01-30 | 2019-06-07 | 京东方科技集团股份有限公司 | Encapsulate film layer and preparation method thereof, encapsulating structure, display device |
| CN109878154A (en) * | 2019-02-26 | 2019-06-14 | 闳晖实业股份有限公司 | Combined type laminate structure |
| CN109920933A (en) * | 2019-03-05 | 2019-06-21 | 京东方科技集团股份有限公司 | Display base plate and its manufacturing method, display panel, display device |
| CN109980118A (en) * | 2017-12-27 | 2019-07-05 | 宁波长阳科技股份有限公司 | A kind of water vapor rejection film |
| CN110444568A (en) * | 2019-07-31 | 2019-11-12 | 武汉华星光电半导体显示技术有限公司 | Organic LED display panel and preparation method thereof, display device |
-
2019
- 2019-11-27 CN CN201911180989.8A patent/CN110854300A/en active Pending
Patent Citations (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1041067A (en) * | 1996-07-24 | 1998-02-13 | Matsushita Electric Ind Co Ltd | Organic electroluminescent element |
| US20030124341A1 (en) * | 1998-04-02 | 2003-07-03 | Cambridge Display Technology Limited | Flexible substrates for organic devices |
| JP2001185348A (en) * | 1999-12-27 | 2001-07-06 | Toppan Printing Co Ltd | Photoelectric conversion element and its manufacturing method |
| JP2003344640A (en) * | 2002-05-29 | 2003-12-03 | Canon Inc | Optical element and method for manufacturing the same |
| US20070048892A1 (en) * | 2005-08-26 | 2007-03-01 | Aaron Wadell | Encapsulating electrode |
| KR20070050764A (en) * | 2006-06-29 | 2007-05-16 | 주식회사 대우일렉트로닉스 | Method for fabricating oled display device |
| KR20110060427A (en) * | 2009-11-30 | 2011-06-08 | 엘지디스플레이 주식회사 | Organic light emitting diodde desplay device and fabricating method thereof |
| CN101704410A (en) * | 2009-12-03 | 2010-05-12 | 上海交通大学 | Nano superhydrophobic surface used for airplane antifreezing and deicing and preparation method thereof |
| KR20110065777A (en) * | 2009-12-10 | 2011-06-16 | 엘지디스플레이 주식회사 | Flexible organic light emitting diodde desplay device and fabricating method of the same |
| CN101844272A (en) * | 2010-01-27 | 2010-09-29 | 长春理工大学 | Method and system for manufacturing self-cleaning surface structure by adopting laser interference photolithography technology |
| US20110273077A1 (en) * | 2010-05-04 | 2011-11-10 | Samsung Mobile Display Co., Ltd. | Organic light emitting display device and method of manufacturing the same |
| CN102167280A (en) * | 2011-01-13 | 2011-08-31 | 西北工业大学 | Super-hydrophobic silicon micron-nano composite structure and preparation method thereof |
| US20150125975A1 (en) * | 2011-05-11 | 2015-05-07 | Edward Feng | Thin film encapsulation of organic light emitting diodes |
| US20130064990A1 (en) * | 2011-09-09 | 2013-03-14 | Weixing Lu | Systems and Methods for Super-Hydrophobic and Super-Oleophobic Surface Treatments |
| CN102779747A (en) * | 2012-07-30 | 2012-11-14 | 江苏物联网研究发展中心 | Machining method of nano column/needle forest structure |
| CN102943246A (en) * | 2012-11-26 | 2013-02-27 | 四川材料与工艺研究所 | Method for preparing metal surface super-hydrophobicity aluminum coating |
| CN103077993A (en) * | 2013-01-23 | 2013-05-01 | 华中科技大学 | Solar cell with double-sided heterojunction structure and preparation method for solar cell |
| CN103395739A (en) * | 2013-07-22 | 2013-11-20 | 江苏物联网研究发展中心 | Preparation method of micro-concave mirror |
| CN103738913A (en) * | 2013-12-31 | 2014-04-23 | 中山大学 | Method for manufacturing quasi-three-dimensional micron-nanometer column array |
| KR20160043447A (en) * | 2014-10-13 | 2016-04-21 | 엘지디스플레이 주식회사 | Organic light emitting display device having hydrophobi bank layer and method of fanricating thereof |
| CN104310307A (en) * | 2014-11-03 | 2015-01-28 | 江苏物联网研究发展中心 | Method for imaging processing of nanorod/nanoneedle forest structure |
| KR20160059818A (en) * | 2014-11-19 | 2016-05-27 | 엘지디스플레이 주식회사 | Organic light emitting display device |
| CN105870159A (en) * | 2016-06-07 | 2016-08-17 | 京东方科技集团股份有限公司 | Organic light-emitting diode display panel, display device and manufacturing method |
| CN106571430A (en) * | 2016-09-18 | 2017-04-19 | 深圳市核高基科技有限公司 | Microdisplay device packaging structure and technology |
| CN106495497A (en) * | 2016-09-21 | 2017-03-15 | 华北电力大学 | A kind of preparation method of surface anti-reflection self-cleaning structure |
| CN106992268A (en) * | 2017-04-28 | 2017-07-28 | 京东方科技集团股份有限公司 | A kind of organic light emitting diode device and its manufacture method, display device |
| CN207637810U (en) * | 2017-12-18 | 2018-07-20 | 长理纳米生物技术（长春）有限公司 | Silicon photrouics with superhydrophobic surface structure |
| CN109980118A (en) * | 2017-12-27 | 2019-07-05 | 宁波长阳科技股份有限公司 | A kind of water vapor rejection film |
| CN109860420A (en) * | 2019-01-30 | 2019-06-07 | 京东方科技集团股份有限公司 | Encapsulate film layer and preparation method thereof, encapsulating structure, display device |
| CN109878154A (en) * | 2019-02-26 | 2019-06-14 | 闳晖实业股份有限公司 | Combined type laminate structure |
| CN109920933A (en) * | 2019-03-05 | 2019-06-21 | 京东方科技集团股份有限公司 | Display base plate and its manufacturing method, display panel, display device |
| CN110444568A (en) * | 2019-07-31 | 2019-11-12 | 武汉华星光电半导体显示技术有限公司 | Organic LED display panel and preparation method thereof, display device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021155629A1 (en) * | 2020-02-07 | 2021-08-12 | 武汉华星光电半导体显示技术有限公司 | Display device and manufacturing method therefor |
| WO2021253547A1 (en) * | 2020-06-17 | 2021-12-23 | Tcl华星光电技术有限公司 | Substrate and method for preparing same, and display panel |
| US11822173B2 (en) | 2020-06-17 | 2023-11-21 | Tcl China Star Optoelectronics Technology Co., Ltd. | Substrate and manufacturing method thereof and display panel |
| CN112261845A (en) * | 2020-10-28 | 2021-01-22 | 武汉第二船舶设计研究所(中国船舶重工集团公司第七一九研究所) | Prevent fine passageway liquid cooling system of condensation |
| CN112261845B (en) * | 2020-10-28 | 2022-06-28 | 武汉第二船舶设计研究所(中国船舶重工集团公司第七一九研究所) | Prevent fine passageway liquid cooling system of condensation |
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