CN110673420A - Integrated optical frequency comb based on micro resonant cavity - Google Patents
Integrated optical frequency comb based on micro resonant cavity Download PDFInfo
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- CN110673420A CN110673420A CN201810710628.9A CN201810710628A CN110673420A CN 110673420 A CN110673420 A CN 110673420A CN 201810710628 A CN201810710628 A CN 201810710628A CN 110673420 A CN110673420 A CN 110673420A
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- resonant cavity
- semiconductor laser
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- frequency comb
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
Abstract
The invention discloses an integrated optical frequency comb based on a micro resonant cavity, which comprises: the device comprises a semiconductor laser chip, an optical amplifier chip, a micro resonant cavity and a temperature controller; the coupling between the chips is to realize direct transverse coupling by utilizing a spot-size conversion structure; the output wavelength of the semiconductor laser chip can be tuned near the resonance wavelength of the micro-resonant cavity; the working waveband of the optical amplifier chip covers the output wavelength of the semiconductor laser chip; the semiconductor laser chip, the optical amplifier chip, the micro-resonant cavity and the temperature controller are packaged in a packaging shell; the semiconductor laser chip, the optical amplifier chip and the micro-resonant cavity are respectively provided with a temperature controller, and the temperature of the semiconductor laser chip, the temperature of the optical amplifier chip and the temperature of the micro-resonant cavity are controlled by the respective temperature controllers. The optical frequency comb has the advantages of simple structure, integration, small volume, low power consumption and the like, overcomes the defects of large volume and poor stability of the traditional optical frequency comb, expands the application range of the optical frequency comb, and can realize the optical frequency comb with large bandwidth and large repetition frequency.
Description
Technical Field
The invention relates to an optical frequency comb generation module, in particular to an integrated optical frequency comb based on a micro-resonant cavity, and belongs to the field of microwave photonics and the field of optical communication.
Background
An optical frequency comb refers to a spectrum consisting of a series of uniformly spaced frequency components with coherently stable phase relationships across the spectrum. The optical frequency comb has wide application in the fields of optical arbitrary waveform generation, multi-wavelength ultrashort pulse generation, dense wavelength division multiplexing, precision measurement and the like. The creation of an optical frequency comb with high flatness, high stability and large frequency separation is an important issue. The traditional method for generating the optical frequency comb is to use a mode-locked laser, but the optical frequency comb generating device is usually large in size, high in power consumption, not beneficial to integration, and usually low in repetition frequency. In recent years, a technique has been developed to generate optical frequency combs using the kerr nonlinear effect of microresonator having a large kerr coefficient. The energy of the signal light generated by the nonlinear effect is proportional to the energy density of the pump light, and because the whispering gallery mode of the micro-resonant cavity has extremely high energy density, very significant nonlinear effects can occur in the micro-resonant cavity, so that a series of new frequency components, namely optical frequency combs, are generated. Because the microresonator is an optical frequency comb generated by the kerr nonlinear effect that occurs with the high energy density of the whispering gallery modes, the optical frequency comb generated in this manner is also referred to as a kerr optical frequency comb. The micro-resonant cavity can be prepared by adopting a mature CMOS (complementary metal oxide semiconductor) process, and the used materials can be widely used semiconductor materials. Therefore, the optical frequency comb based on the micro-resonant cavity provides an effective solution for integration, low power consumption and miniaturization, and has important research and application prospects.
The whispering gallery mode of the optical microcavity has extremely high energy density, and can excite obvious nonlinear effects, namely four-wave mixing and cascade four-wave mixing effects, to generate a series of lights with equal frequency intervals, namely Kerr frequency combs. The Kerr optical frequency comb has large frequency interval which can reach dozens of GHz to hundreds of GHz, and the frequency interval can be adjusted by temperature or elastic deformation and the like, so that the Kerr optical frequency comb has the advantage of convenient regulation and control.
The generation of the kerr optical frequency comb needs to satisfy the following conditions: 1) the micro-resonant cavity is at an anomalous dispersion point; 2) the pump light is properly detuned from the resonant wavelength; 3) the pump power is above the threshold power. The first two conditions are usually easy to satisfy, but the third condition is often difficult to satisfy. The threshold power is related to the Q value of the micro-resonant cavity, and the larger the Q value is, the lower the threshold power is; conversely, the smaller the Q value, the greater the threshold power. The Q of the microresonator is related to its own losses, with smaller losses giving a higher Q. The key to reducing the threshold power is therefore to reduce the microresonator losses. The Q value is generally 10, subject to the current state of the art4～105The threshold power, which is typically above the wattage level, exceeds the maximum output power that can be provided by current semiconductor lasers.
The light emitted by the laser is coupled into the microcavity by connecting the light exit of the laser to the light entrance of the microresonator and by directing the light into the microresonator using an optical fiber. Not only is this approach disadvantageous for integration, but coupling losses are large and system stability is reduced. The power of the required light source will increase further due to the problem of large coupling losses, which puts higher demands and challenges to the semiconductor laser.
Disclosure of Invention
Technical problem to be solved
In order to realize an integrated optical frequency comb, solve the problems of large coupling loss and insufficient power of a semiconductor laser, and meet the requirements of the fields of high-speed optical communication, arbitrary waveform generation, precision measurement and the like on the optical frequency comb with low power consumption, low cost and small volume, the invention provides the integrated optical frequency comb based on the micro resonant cavity, wherein a semiconductor laser chip, an optical amplifier chip and the micro resonant cavity realize efficient direct coupling by using a mode spot conversion structure, and the size is reduced and the coupling efficiency is further improved by a hybrid integration mode.
(II) technical scheme
The invention is an integrated optical frequency comb based on a micro-resonant cavity, comprising: semiconductor laser chip, optical amplifier chip, micro-resonant cavity and temperature controller, wherein:
the semiconductor laser chip, the optical amplifier chip, the micro-resonant cavity and the temperature controller are mixed and integrated together and are encapsulated in an encapsulation shell;
the ports of the semiconductor laser chip, the optical amplifier chip and the micro resonant cavity are all provided with spot size conversion structures, and efficient transverse coupling is realized by utilizing the spot size conversion structures. It can be understood that the spot-size conversion structure is a tapered waveguide, and when light is transmitted in the spot-size conversion structure, the light spot becomes larger gradually, so that the light spot can be matched with the waveguide behind the spot-size conversion structure, and the coupling efficiency can be improved.
The output wavelength of the semiconductor laser chip is arranged at the micro-resonance wavelength and is tuned nearby;
the working waveband of the optical amplifier chip covers the output wavelength of the semiconductor laser chip;
the semiconductor laser chip, the optical amplifier chip and the micro-resonant cavity are respectively provided with a temperature controller, and the temperature of the semiconductor laser chip, the optical amplifier chip and the micro-resonant cavity can be independently controlled by the respective temperature controllers.
Semiconductor laser chips are laser chips with high frequency stability and narrow linewidth, low noise, including Distributed Bragg Reflector (DBR) lasers or Distributed Feedback (DFB) lasers.
The optical amplifier chip has high gain and large output power, and the output power can meet the threshold power of the micro-resonant cavity.
The micro-resonant cavity is a micro-resonant cavity with high nonlinearity, high Q value and low threshold power, and comprises a micro-ring resonant cavity or a micro-disk resonant cavity or a micro-sphere resonant cavity.
The temperature controller is a plurality of discrete temperature controllers which can respectively control the temperature of the laser chip, the optical amplifier chip and the micro-resonant cavity correspondingly, and comprises a semiconductor cooler (TEC).
(III) advantageous effects
Compared with the prior art, the invention has the following advantages:
the semiconductor laser chip, the optical amplifier chip and the micro-resonant cavity realize the integrated optical frequency comb in a hybrid integration and packaging mode, so that the size and the power consumption are reduced, and the stability is improved.
The coupling efficiency is improved by using the spot-size conversion structure among the semiconductor laser chip, the optical amplifier chip and the micro resonant cavity.
Drawings
FIG. 1 is a schematic diagram of an integrated optical frequency comb based on micro-resonators according to an embodiment of the present invention;
in the figure:
the semiconductor laser chip 1, the optical amplifier chip 2, the micro-resonant cavity chip 3, the temperature controller 4, the temperature controller 5, the temperature controller 6
FIG. 2 illustrates a spot size conversion structure used for coupling between chips according to an embodiment of the present invention;
fig. 3 is an optical frequency comb diagram obtained in an embodiment of the present invention.
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
The invention provides an integrated optical frequency comb based on a micro resonant cavity, which comprises: the device comprises a semiconductor laser chip, an optical amplifier chip, a micro resonant cavity and a temperature controller.
Referring to fig. 1, an embodiment of an optical frequency comb according to the present invention includes: the device comprises a semiconductor laser chip 1, an optical amplifier chip 2, a micro-ring resonant cavity 3, and a temperature controller 4-6.
The semiconductor laser chip, the optical amplifier chip, the micro-resonant cavity and the temperature controller are mixed and integrated together and are packaged in a packaging shell.
In this embodiment, the semiconductor laser chip 1, the optical amplifier chip 2, and the micro-ring resonator 3 are arranged in succession, and the temperature controller 4 to the temperature controller 6 respectively and independently control the semiconductor laser chip 1, the optical amplifier chip 2, and the micro-ring resonator 3, and are packaged in a package housing in this arrangement.
The semiconductor laser chip, the optical amplifier chip and the micro resonant cavity are directly and transversely coupled by a spot conversion structure.
It can be understood that the spot-size conversion structure is a tapered waveguide, and when light is transmitted in the spot-size conversion structure, the light spot becomes larger gradually, so that the light spot can be matched with the waveguide behind the spot-size conversion structure, and the coupling efficiency can be improved.
The output wavelength of the semiconductor laser chip can be tuned at and near the resonant wavelength of the microresonator.
In this embodiment, the output power of the semiconductor laser chip 1 is 100 mW. By adjusting the temperature controller 4, the output wavelength of the semiconductor laser chip 1 can be changed within a range of 1549.1nm to 1551.3nm, and the line width of the laser light is 100 kHz.
The operating band of the optical amplifier chip covers the output wavelength of the semiconductor laser chip.
In this embodiment, the output power of the optical amplifier chip 2 can reach 700mW, and the working wavelength covers the output wavelength of the semiconductor laser chip 1. The optical amplifier chip 2 has a low noise figure, a high gain, and a narrow line width.
The semiconductor laser chip, the optical amplifier chip and the micro-resonant cavity are respectively provided with a temperature controller, and the temperature of the semiconductor laser chip, the optical amplifier chip and the micro-resonant cavity can be independently controlled by the respective temperature controllers.
In this embodiment, the temperature controller 4-6 have two functions, one is to keep the temperature stable, and the other is to regulate the temperature. Whether semiconductor laser chips, optical amplifier chips, or micro-ring resonators, their operating characteristics are closely related to temperature. The temperature change affects the output wavelength of the semiconductor laser, the gain and the output power of the optical amplifier, and the resonant wavelength and the free spectral range of the micro-ring resonator.
Semiconductor laser chips are laser chips with high frequency stability and narrow linewidth, low noise, including Distributed Bragg Reflector (DBR) lasers or Distributed Feedback (DFB) lasers. The detailed description thereof is already presented in this embodiment and will not be repeated herein.
The optical amplifier chip has high gain and large output power, and the output power can meet the threshold power of the micro-resonant cavity. The detailed description thereof is already presented in this embodiment and will not be repeated herein.
The micro-resonant cavity is a micro-resonant cavity with high nonlinearity, high Q value and low threshold power, and comprises a micro-ring resonant cavity, a micro-disk resonant cavity or a micro-sphere resonant cavity.
In this embodiment, the micro-resonator is selected as a micro-ring resonator, the micro-ring resonator 3 is prepared by a standard CMOS process, and the material used is silicon nitride grown by LPCVD. The micro-ring resonator adopts a straight-through structure, the radius is 500um, the material used in the embodiment is silicon nitride but not limited to silicon nitride, high nonlinearity is required, and a relatively obvious four-wave mixing effect can occur. The resonant wavelength and the free spectral range of the micro-ring resonator 3 can be adjusted by a temperature controller. Light output by the optical amplifier chip 2 is input from an input port of the micro-ring resonant cavity 3 and is coupled into the micro-ring through evanescent waves. The excited optical frequency comb and the residual pump light are output from the output port of the micro-ring resonator 3.
In this embodiment, the ports of the semiconductor laser chip, the optical amplifier chip, and the micro-resonant cavity all have a spot-size conversion structure, so that efficient coupling can be realized. The detailed description thereof is already presented in this embodiment and will not be repeated herein.
In this embodiment, the temperature controller is a plurality of discrete temperature controllers, which can control the temperature of the laser chip, the optical amplifier chip, and the micro-resonator, respectively, and includes a semiconductor cooler (TEC). The detailed description thereof is already presented in this embodiment and will not be repeated herein.
The operation flow of the integrated optical frequency comb based on the micro-ring resonant cavity to generate the optical frequency comb provided by the invention is as follows:
firstly, supplying power to a semiconductor laser chip 1 and an optical amplifier chip 2;
and secondly, supplying power to the temperature controllers 4 and 6, and waiting for the output light power of the laser, the optical amplifier and the micro-ring to be stable:
and thirdly, slowly adjusting the control voltage of the temperature controller 4 below the semiconductor laser chip 1 to change the temperature of the semiconductor laser chip 1, thereby slowly adjusting the output wavelength of the semiconductor laser. And in the process of adjusting the temperature, monitoring the output spectrum of the micro-ring resonant cavity in real time through a spectrometer. If a series of equally spaced spectral components can be observed on the spectrometer, it indicates that the pump light is coupled into the micro-ring resonant cavity at this time, and a four-wave mixing effect occurs, so as to generate an optical frequency comb.
And fourthly, further adjusting the control voltage of the optical amplifier, so that the output power and the number of comb teeth of the optical frequency comb can be adjusted.
And fifthly, adjusting the temperature controller 6 below the micro-ring resonant cavity 3 to adjust the free spectral range, namely the frequency interval of the optical frequency comb.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. An integrated optical frequency comb based on a microresonator, the optical frequency comb comprising: semiconductor laser chip, optical amplifier chip, micro-resonant cavity and temperature controller, wherein:
the semiconductor laser chip, the optical amplifier chip, the micro resonant cavity and the temperature controller are mixed and integrated together and are packaged in a packaging shell;
the semiconductor laser chip, the optical amplifier chip and the micro resonant cavity are directly and transversely coupled by using a spot conversion structure;
the output wavelength of the semiconductor laser chip is configured at the resonance wavelength of the micro-resonant cavity and is tuned nearby;
the working waveband of the optical amplifier chip covers the output wavelength of the semiconductor laser chip;
the semiconductor laser chip, the optical amplifier chip and the micro-resonant cavity are respectively provided with a temperature controller, and the temperature of the semiconductor laser chip, the temperature of the optical amplifier chip and the temperature of the micro-resonant cavity can be respectively controlled by the corresponding temperature controllers.
2. The microresonator-based integrated optical frequency comb of claim 1, wherein the semiconductor laser chip comprises a distributed bragg reflector laser or a distributed feedback laser.
3. The microresonator-based integrated optical frequency comb of claim 1, wherein the output power of the optical amplifier chip is capable of meeting a threshold power of the microresonator.
4. The microresonator-based integrated optical frequency comb of claim 1, wherein the microresonator is a microresonator comprising a microring resonator or a microdisc resonator or a microsphere resonator.
5. An integrated microresonator-based optical frequency comb as claimed in claim 1 wherein the semiconductor laser chip, the optical amplifier chip and the microresonator have a spot size conversion structure at their ends.
6. An integrated microresonator-based optical frequency comb as claimed in claim 1 wherein the temperature controller is a plurality of discrete temperature controllers capable of providing respective temperature control of the laser chip, the optical amplifier chip and the microresonator, including a semiconductor refrigerator.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111610682A (en) * | 2020-05-19 | 2020-09-01 | 西南大学 | Rectangular optical frequency comb generation system based on silicon nitride micro-ring on chip |
| WO2023035775A1 (en) * | 2021-09-13 | 2023-03-16 | 中兴光电子技术有限公司 | Wavelength locker, tunable laser and wavelength locking control method |
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Application publication date: 20200110 |