CN110379868A - The manufacturing method of solar cell and solar cell - Google Patents
The manufacturing method of solar cell and solar cell Download PDFInfo
- Publication number
- CN110379868A CN110379868A CN201910670414.8A CN201910670414A CN110379868A CN 110379868 A CN110379868 A CN 110379868A CN 201910670414 A CN201910670414 A CN 201910670414A CN 110379868 A CN110379868 A CN 110379868A
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- Prior art keywords
- solar cell
- bus electrode
- glass
- electrode
- solder
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910000679 solder Inorganic materials 0.000 claims description 70
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 28
- 238000010304 firing Methods 0.000 claims description 27
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052742 iron Inorganic materials 0.000 claims description 14
- 229910052720 vanadium Inorganic materials 0.000 claims description 8
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052788 barium Inorganic materials 0.000 claims description 7
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 7
- 238000002604 ultrasonography Methods 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 239000006071 cream Substances 0.000 claims 2
- 239000005368 silicate glass Substances 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 abstract description 31
- 239000004332 silver Substances 0.000 abstract description 31
- 239000005355 lead glass Substances 0.000 abstract description 15
- 239000000203 mixture Substances 0.000 abstract description 2
- 238000003466 welding Methods 0.000 description 76
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 17
- 229910020816 Sn Pb Inorganic materials 0.000 description 12
- 229910020922 Sn-Pb Inorganic materials 0.000 description 12
- 229910008783 Sn—Pb Inorganic materials 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 238000005245 sintering Methods 0.000 description 11
- 239000003795 chemical substances by application Substances 0.000 description 10
- 238000005476 soldering Methods 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 229910020836 Sn-Ag Inorganic materials 0.000 description 8
- 229910020988 Sn—Ag Inorganic materials 0.000 description 8
- 238000012546 transfer Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 238000010422 painting Methods 0.000 description 5
- 229910020994 Sn-Zn Inorganic materials 0.000 description 4
- 229910009069 Sn—Zn Inorganic materials 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000012752 auxiliary agent Substances 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012144 step-by-step procedure Methods 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- WQEVDHBJGNOKKO-UHFFFAOYSA-K vanadic acid Chemical compound O[V](O)(O)=O WQEVDHBJGNOKKO-UHFFFAOYSA-K 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to the manufacturing methods of a kind of solar cell and solar cell, and its object is to reduce the usage amount of silver and reduce or eliminate the usage amount of lead (lead glass).Composition of the invention, it is while manufacturing to generate the region of high electron concentration in irradiation light on substrate etc., the insulating film of transmitted ray etc. is formed on the area, and is had from the solar cell for being formed by the bus electrode that electronics outlet takes out electronics in the insulating film；In order to form bus electrode, conductive glass is mixed into as frit using weight ratio 20% to 70% in conductive paste and is fired and forms bus electrode, to reduce the usage amount of conductive paste.
Description
The application is application No. is 201610371213.4, and the applying date is on May 30th, 2016, the entitled " sun
The divisional application of the Chinese patent application of the manufacturing method of battery and solar cell ".
Technical field
The present invention relates to the manufacturing method of a kind of solar cell and solar cell, whens being produced on irradiation light etc. on substrate
While generating the region of high electron concentration, the insulating film of transmitted ray etc. is formed on region, and is had from being formed in insulation
The electronics outlet of film takes out the bus electrode (bus electrode) of electronics.
Background technique
It in the past, is using the semiconductor technology of the leading role in 20th century as base using the solar cell of one of renewable energy
Plinth and carry out its exploitation.It is the important exploitation for influencing the global level of human survival.The exploitation project is not only the sun
Light is converted into the efficiency of electric energy, is also in progress while facing and reducing manufacturing cost and non-harmful project.Realize these mesh
, the usage amount for reducing or eliminating the silver used in electrode (Ag) and lead (pb) is especially important.
In general, the construction of solar cell, as shown in the plan view of Fig. 7 (a) and 7 (b) sectional view, by following element structure
At: the sunlight energy is converted into electric energy by N-type/p-type silicon substrate 43；Silicon nitride 45 prevents the surface reflection of silicon substrate 43
It and is insulator film；Finger electrode (finger electrode) 42 takes out the generated electronics in silicon substrate 43；Bus
Electrode (bus bar electrode) 41 collects taken out electronics with finger electrode 42；And draw lead electrode (lead
Electrode) 47, it takes out collecting to the electronics of bus electrode 41 to outside.
Wherein, preferably in bus electrode 41 and finger electrode 42 using silver and lead (lead glass), the usage amount of silver is reduced
And the usage amount of lead (lead glass) is reduced or eliminated, and be formed as inexpensive and nuisanceless.
Summary of the invention
(the invention project to be solved)
In the constituent element of the solar cell of previous Fig. 7 described above, (made in finger electrode 42 is equal using silver and lead
For the lead glass of binder), it reduces the usage amount of silver and reduces or eliminates the usage amount of lead (lead glass), make the system of solar cell
It causes this reduction and becomes non-harmful project.
(to the means to solve the problem)
The present invention is in order to reduce the usage amount of silver and reduce or eliminate the usage amount of lead (lead glass), to form the sun
The bus electrode etc. of the constituent element of battery is mixed into vanadate glass (hereinafter referred to as electric conductivity NTA glass, NTA in silver paste
For Japan registration trade mark 5009023) it is fired as sintering aid, and the use of silver and lead (lead glass) can be reduced or eliminated
Amount.
Therefore, the present invention is a kind of solar cell, and the solar cell production has the generation in irradiation light on substrate etc.
The region of high electron concentration, and the insulating film for being formed with transmitted ray on the area etc., and have from being formed in the insulating film
Electronics outlet take out electronics bus electrode, wherein in order to form bus electrode, conductive paste with weight ratio 20% to
70% is mixed into conductive glass as frit and is fired and forms bus electrode, to reduce the usage amount of conductive paste.
At this point, conductive glass is set as at least vanadic acid glass containing vanadium or vanadium and barium.
Also, the time for the step of being mixed into conductive glass and being fired, longest is also within 1 minute and more than the several seconds.
Moreover, conductive glass is set as no Pb.
Lead electrode is provided with also, being formed by bus electrode in firing.
(invention effect)
The present invention and being mixed into electric conductivity NTA glass in silver paste as auxiliary agent is fired as described above, be fired, energy
It enough reduces usage amount silver-colored in previous silver paste and reduces or eliminates the utilization of lead (lead glass).Whereby, there is following spies
Sign.
First is to use the NTA of the vanadate glass of electric conductivity to form the bus electrode of solar cell (silver electrode)
Sintering aid of the glass (Japan registration trade mark the 5009023rd, Japanese Patent Publication No. 5333976) as silver paste, can be reduced
The usage amount of Ag and the usage amount for reducing or eliminating lead (lead glass).
Second is that the weight rate for occupying the NTA glass of sintering aid in silver paste is set as 20%~70% range and makes
With.The efficiency that will not be reduced the sunlight energy and be converted into electronic energy is able to confirm that out by experiment, and is played and be used as bus
The electrode of the effect of electrode is formed.Through investigating, this target can be realized and NTA glass is formed as following persons: (1) having
Electric conductivity；(2) silver is separated and is collected from glass and being mixed into silver paste, electric conductivity can be improved；(3) inhibit previous glass
Acicular crystal growth and electric conductivity can be improved with Ag；(4) it in using the sintering aid formed in bus electrode, uses
Do not generate the NTA glass of sintering (firing) phenomenon and the reduction (referring to following thirds, the 4th) of transfer efficiency can be eliminated etc..
Third be contactless silver particles etc. NTA glass formed high resistance crystal sintering process condition in be sintered.
When forming high resistance crystal (such as described acicular crystal), when passing through bus electrode from finger electrode, the movement of electronics can not be fitted
Locality carries out and reduces the transfer efficiency of the energy, but thinks by complete in the short time (even if such as longer also within 1 minute)
A kind of gimmick at sintering step as the generation for reducing high resistance crystal, and be able to solve.
4th from it is previous different, be to form different glass using containing the formation and bus electrode for making finger electrode
The silver paste of material.In the past, in the formation of finger electrode, it is necessary to generate and be referred to as the phenomenon that being sintered.By using the burning as silver
The effect for tying the component molecules in the frit of auxiliary agent, the lead molecule in such as lead glass, so as to be formed in silicon substrate surface layer
The mode of finger electrode is broken through and formed to the insulating layer of silicon nitride film, and efficiently collects the electronics generated in silicon substrate.But
For forming bus electrode, it is not necessary to as sintering phenomenon.It was that bus electrode is also contained to the lead glass of lead composition as sintering in the past
Auxiliary agent and be sintered, the road so the different bus electrode of construction and silicon substrate formation electrically conduct and reduce transfer efficiency.It is logical
It crosses and is forming sintering aid used in bus electrode, conversion effect can be eliminated using the NTA glass for not generating sintering phenomenon
The reduction of rate.
5th is to have the problem of (raw material expense is high) at high cost using solar cell caused by silver powder powder material.Also, due to
The problem of needing also to emerge material scheduling of ag material surplus.Think the containing ratio of the NTA glass even with electro-conductive glass
It significantly increases to 20% to 70% and reduces its silver paste for corresponding to silver content, transfer efficiency will not be reduced and the sun can be manufactured
Battery generates great influence to industrial circle.
6th forms used lead glass without using previous bus electrode for (5), can become unleaded.Whereby,
It is capable of the environmental problem of absolutely not lead public hazards.
Detailed description of the invention
Fig. 1 shows one embodiment of the invention structure chart (the completion figures of step: sectional view).
Fig. 2 is action specification flow chart of the invention.
Fig. 3 is step-by-step procedures figure (its 1) of the invention.
Fig. 4 is step-by-step procedures figure (its 2) of the invention.
Fig. 5 is detailed description of the invention figure (bus electrode detailed).
Fig. 6 is explanatory diagram (bus electrode) of the invention.
Fig. 7 is the explanatory diagram of the prior art.
Fig. 8 is other embodiments of the invention flow chart.
Fig. 9 is solder/conducting wire schematic structural diagram on bus electrode of the invention.
Figure 10 is bus electrode and the experimental results example of bonding (Nian Jie) property of solder of NTA glass of the invention.
Figure 11 is the welding photo (A) of Sn-Ag solder of the invention.
Figure 12 is the welding photo (B) of Sn-Ag solder of the invention.
Figure 13 is the welding photo (C) of Sn-Zn solder of the invention.
Figure 14 is the welding photo (D) of Sn-Pb solder (fluxing agent) of the invention.
Figure 15 is the welding photo (E) of Sn-Pb solder (fluxing agent) of the invention.
Figure 16 is the welding photo (F) of Sn-Pb solder (flux-free) of the invention.
Symbol description
11 silicon substrates
12 high electron concentration regions (diffusing, doping)
13 insulating films (silicon nitride film)
14 electronics outlets (finger electrode)
15 bus electrodes
16 rear electrodes
17 conducting wires
41 bus electrodes
42 finger electrodes
43 silicon substrates
44 N/P diffusion layers
45 silicon nitride films
46 rear electrodes
47 draw lead electrode
171 bronze medals
172 solders
S1~S10 step
S21~S24 step.
Specific embodiment
[embodiment 1]
Fig. 1 shows one embodiment of the invention structure chart (the completion figure of step: sectional view).
In Fig. 1, silicon substrate 11 is well-known silicon semiconductor substrate.
High electron concentration region (diffusing, doping layer) 12 is to form the layer of required p-type/N-shaped by diffusing, doping etc.
Well-known region (layer) made of on silicon substrate 11 in the figure, when from upper direction incidence sunlight, produces in silicon substrate 11
Raw electronics (power generation) and the region for putting aside the electronics.Here, the electronics put aside passes through electronics outlet (finger electrode (silver))
14 are upwardly-directed removed (referring to invention effect).
Insulating film (silicon nitride film) 13 is to pass through sunlight and make bus electrode 15 and high electron concentration region 14 electrically
The well-known film of insulation (referring to invention effect).
Electronics outlet (finger electrode (silver)) 14 is will to put aside through the hole for being formed in insulating film 13 in high electronics
The mouth (finger electrode) that electronics in concentration range 12 takes out (referring to invention effect).
Bus electrode (electrode 1 (silver)) 15 is the electrode for being electrically connected multiple electronics outlets (finger-like strip electrode) 14, and
It is the electrode for cutting down the object of usage amount of Ag (referring to invention effect).
Rear electrode (electrode 2 (aluminium)) 16 is formed in the well-known electrode below silicon substrate 11.
Conducting wire (solder is formed) 17 is to be electrically connected the taking out electronics (electric current 1) to external of multiple bus electrodes 15 to lead
Line.
Based on the construction of above Fig. 1, from top to bottom when direction irradiation sunlight, sunlight passes through no conducting wire 17 and electronics
The part of outlet 14 and insulating film 13, are incident to silicon substrate 11 and generate electronics.Then, savings is in high electron concentration region 12
Electronics, via electronics outlet (finger electrode) 14, bus electrode 15, conducting wire 17 and be taken out to outside.At this point, such as rear
Fig. 2 is stated into Fig. 6, NTA glass (conductive glass) is mixed into silver paste as frit and is fired and forms bus electricity
Pole 15 can reduce the usage amount of Ag.Hereinafter, successively explaining in detail.
Fig. 2 shows that action specification flow chart of the invention, Fig. 3 and Fig. 4 show the detailed configuration of each step.
In Fig. 2, S1 is to prepare silicon substrate.
S2 is to be cleaned.Shown in S1, S2 such as Fig. 3 (a), the face of the silicon substrate 11 prepared in S1 (is formed into high electronics
The face of concentration range 12) it cleans well.
S3 is to be diffused doping.It is such as shown in Fig. 3 (b), many institutes are carried out on the silicon substrate 11 after Fig. 3 (a) is cleaned
Known diffusing, doping forms high electron concentration region 12.
S4 is to form anti-reflective film (silicon nitride film).As shown in Fig. 3 (c), in the high electron concentration area for being formed with Fig. 3 (b)
Behind domain 12, forming such as silicon nitride film as anti-reflective film by well-known method (passes through sunlight, and as far as possible
Reduce the film of surface reflection).
S5 is screen painting finger electrode.As shown in Fig. 3 (d), after the silicon nitride film 13 for forming Fig. 3 (c), net is carried out
The pattern of version printing formation finger electrode 14.Printing material is, for example, silver is mixed into lead glass as frit (frit).
S6 is to be fired finger electrode and make it through flame.This be Fig. 3 (d) by carry out screen painting after finger
Shape electrode 14 pattern (be mixed into silver and lead glass frit and winner) be fired, as shown in Fig. 3 (e), make silicon nitride
Film 13 is formed in the finger electrode 14 for being formed with silver-colored (electric conductivity) by flame.
S7 is to carry out screen painting bus electrode (electrode 1).As shown in Fig. 3 (f), in the finger electrode for being formed with Fig. 3 (e)
After 14, the pattern that screen painting is formed by bus electrode 15 is carried out.Printing material uses, for example, being mixed into NTA gas in silver
(20% to 70%) it is used as frit.
S8 is to be fired bus electrode.This is by the pattern of the bus electrode 15 after Fig. 3 (f) carries out screen painting
(be mixed into silver and NTA glass (20% to 70%) frit) be fired (even if the firing time it is longer also 1 minute with
It is interior, fire 2~3 seconds or more), as shown in Fig. 4 (g), bus electrode 15 is formed in top layer.
S9 is to form rear electrode (electrode 2).Such as Fig. 4 (h), such as aluminium electricity is formed in the downside (back side) of silicon substrate 11
Pole.
S10 is to carry out solder to form conducting wire.As shown in Fig. 4 (i), conducting wire and electric connection, the conducting wire are formed with solder
It is electrically connected the bus electrode of Fig. 4 (g).
According to above step, solar cell can be made in silicon substrate.
Fig. 5 shows detailed description of the invention figure (firing of bus electrode).
Fig. 5 (a) schematically shows the example that bus electrode is fired with silver 100%, NTA0% (weight ratio), and Fig. 5 (b) shows
Show to meaning property the example that bus electrode is fired with silver 50%, NTA50% (weight ratio).Even if the firing time is longer also at 1 point
Within clock and it is set as 2~3 seconds or more.
As shown in Fig. 5 (a) and Fig. 5 (b), solar cell is formed by a manner of becoming same general configuration studies reality
It tests, experimental result described as follows can be obtained.
The transfer efficiency of solar cell
The Ag 100% of Fig. 5 (a), NTA 0% average about 17%
The Ag 50% of Fig. 5 (b), NTA 50% average about 17%
Experimental result is studied, for printing the material of pattern of bus electrode, in Fig. 5 (a) and Fig. 5 (b), the sun is made
Transfer efficiency when battery can obtain roughly the same as a result, it is possible to go out NTA can be used with experimental verification for average about 17%
Glass (conductive glass, 20% to 70%) replaces Ag (referring to invention effect).Moreover, NTA glass is made of vanadium, barium, iron,
Especially iron is bonded stanchly in inside and remains in inside this, even if mixing with other materials also has its associativity very small
Property (referring to JP 5333976 etc.).
Fig. 6 shows explanatory diagram of the invention (bus electrode).
Fig. 6 (a) shows that all plan views, Fig. 6 (b) show enlarged drawing.
In Fig. 6, bus electrode 15 is strip electrode, with optical microphotograph as shown in all plan views in Fig. 6 (a)
When mirror is amplified, it is able to observe that as constructed shown in Fig. 6 (b).
In Fig. 6 (b), bus electrode 15 is when the frit using previous Ag and lead glass is fired, and Ag is uniform
Ground dispersion, but be fired using the frit of Ag and NTA glass of the invention (even if longer also within 1 minute, 2~3 seconds
Above firing) when, as shown in Fig. 6 (b), clear two sides NTA glass (especially barium) formation in the bus electrode 15
To be granular, and Ag aggregation is formed in the center portion of the bus electrode 15.Therefore, such as on invention effect column it is stated that, it is mixed in Ag
Enter NTA glass and carry out short time firing (even if it is longer also at 1 minute and be firing in 2~3 seconds or more) when, Ag is gathered in
Center portion and so that electric conductivity is promoted (the case where being uniformly dispersed compared to previous Ag, electric conductivity can be promoted), and NTA glass sheet
The body also comprehensive effect such as conductive, even if reducing the ratio of Ag and increasing NTA glass, when manufacturing as solar cell
Transfer efficiency is as previously described, is about 17%, can obtain roughly the same result in an experiment.
Moreover, firing temperature is 500 DEG C to 900 DEG C, but must be determined according to experiment when manufacture is used as solar cell most
Suitable temperature.The too low or too high construction being all unable to get such as Fig. 6 (b), it is necessary to be determined by testing.
Fig. 8 shows other embodiments of the invention flow chart.Conducting wire (lead electrode) 17 is carried out ultrasonic bonding by display
Sequence in bus electrode 15.
In fig. 8, S21 is to form finger electrode.Form the finger electrode 14 described from Fig. 1 to Fig. 6.
S22 is to form bus electrode.Form the bus electrode 15 described from Fig. 1 to Fig. 6.
S23 is to be bonded solder material.Solder is pre-spliced and is formed by 15 surface of bus electrode in S22, to make
The ultrasonic bonding of conducting wire 17 facilitates.It is to make the bonding by solder moreover, solder pre-splice being not necessarily required
Property really and carry out operation.
S24 is to be bonded conducting wire.Conducting wire (having pre-welding material or without pre-welding material) 17 is subjected to ultrasonic bonding in S22, S23
It is formed by bus electrode 15 (having pre-welding material or without pre-welding material).Ultrasonic bonding be by bus electrode 15 from room temperature pre-add
In the state of below heat to the melting temperature of solder, ultrasonic wave side is supplied to the soldering iron of ultrasonic wave soldering iron in front and supplies solder
The solder horn (when having formed pre-welding material supply/sometimes or do not supply solder), is carried out bus electrode 15 and conducting wire 17 with solder
It is bonded (welding), and adhesiveness is made to become very good (aftermentioned).It, can not be with solder by bus electrode 15 when not supplying ultrasonic wave
It is Nian Jie with conducting wire 17 and (aftermentioned) can not be bonded.
As more than, by that in bus electrode 15,17 adhesiveness of conducting wire can be made to be bonded well 17 ultrasonic bonding of conducting wire
In bus electrode 15.At this point, very supersonic welding can be carried out well and certainly by preheating bus electrode 15 etc.
Connect operation.
Fig. 9 shows solder/conducting wire schematic structural diagram on bus electrode of the invention.
Fig. 9 (a) shows that all sectional views, Fig. 9 (b) show the sectional view of conducting wire 17.Here, because silicon substrate 11, bus
Electrode 15, conducting wire 17 number person identical with Fig. 1 are identical, so omitting the description.
In Fig. 9 (a), solder 172, which is schematically shown, carries out ultrasonic wave for bus electrode (preheating) 15 and conducting wire 17
State after welding.Solder 172 is comprehensively bonded on bus electrode 15 and welding is in conducting wire 17.
In Fig. 9 (b), solder 172 is shown in the state that pre-welding material has been pre-formed around conducting wire (lead electrode) 17.
Copper 171 is copper strips, is schematically shown in advance by 172 welding of solder around it, and is easy and bus electrode 15
The case where carrying out ultrasonic bonding.
As more than, conducting wire 17 made of pre-welding material is formed around copper strips 171 using by solder 172, and bus is electric
In the state that pole 15 is preheated and (is preheated the solar cell entirety comprising silicon substrate 11, bus electrode 15 etc.),
By ultrasonic bonding, 17 adhesiveness of conducting wire can be welded on bus electrode 15 well as shown.
Figure 10 is shown and the example of the experimental result of bonding (Nian Jie) property of the solder of the bus electrode of NTA glass of the invention
Son.Herein,
The type of solder be experiment kupper solder/flux-free, kupper solder/fluxing agent, added with tin silver, be added with
4 type of tin/zinc.
Main component shows the main component of the type according to solder.
When using ultrasonic wave soldering iron, the difference of OK and NG is shown with the adhesiveness of NTA glass.
When without using ultrasonic wave soldering iron, the difference of OK and NG is shown with the adhesiveness of NTA glass.
For above project, will be tested as the result is shown in Figure 10.From Figure 10's as a result,
When being able to confirm that out using ultrasonic bonding soldering iron, for whole solders other than kupper solder/fluxing agent
Type can obtain OK's as a result, bus electrode 15 for NTA glass documented by Fig. 1 to Fig. 6, can be true by experiment
Recognize and conducting wire 17 is welded and is bonded well.On the other hand, when not using ultrasonic bonding soldering iron, for whole welderings
Expect type, obtains the result of NG.
Secondly, using Figure 11 to Figure 16, the reality of such as following welding situations (individual to fire) for successively explaining NTA50 in detail
Test example.
Figure 11 shows the welding photo (A) of Sn-Ag solder of the invention.
Figure 11 (a) shows welding condition, and the photo before Figure 11 (b) display welding (has ultrasound after Figure 11 (c) display welding
Wave) photo.
In Figure 11 (a), welding condition is following diagrams.
Use solder: Sn-Ag solder
Ultrasonic wave: have
Solder horn temperature: 350 DEG C
Soldering iron vibrates output power: 10W
Preheating: 200 DEG C
Photo before Figure 11 (b) display welding.
The photo for (having ultrasonic wave) after Figure 11 (c) display welding.Can be clear from the photo after welding, Figure 11 (b)
Welding before photo on, clear bead width extensively welding and is bonded in the wide bus electrode 15 of longitudinal width
On.
Figure 11 (d) is under the same conditions, when no ultrasonic wave, because that can not be welded on bus electrode 15, so being recorded as nothing
Picture data.
As more than, Sn-Ag solder being capable of ultrasonic bonding well (assigning preheating).Moreover, conducting wire 17 can be glued
The ultrasonic bonding well of conjunction property is on it.
Figure 12 shows the welding photo (B) of Sn-Ag solder of the invention.
Figure 12 (a) shows welding condition, and the photo before Figure 12 (b) display welding (has ultrasound after Figure 12 (c) display welding
Wave) photo.
In Figure 12 (a), welding condition is following diagrams.
Use solder: Sn-Ag solder
Ultrasonic wave: have
Solder horn temperature: 400 DEG C
Soldering iron vibrates output power: 10W
Preheating: 200 DEG C
Photo before Figure 12 (b) display welding.
The photo for (having ultrasonic wave) after Figure 12 (c) display welding.Can be from the photo after welding clearly, Figure 12
(b) on the photo before welding, clear bead width extensively welding and be bonded in longitudinal width it is wide bus electricity
On pole 15.
Figure 12 (d) is under the same conditions, when no ultrasonic wave, because that can not be welded on bus electrode 15, so being recorded as nothing
Picture data.
It, being capable of ultrasonic bonding well (assigning preheating) with Sn-Ag solder as more than.Moreover, can be by conducting wire 17
Adhesiveness ultrasonic bonding well is on it.
Figure 13 shows the welding photo (C) of Sn-Zn solder of the invention.
Figure 13 (a) shows welding condition, and the photo before Figure 13 (b) display welding (has ultrasound after Figure 13 (c) display welding
Wave) photo.
In Figure 13 (a), welding condition is following diagrams.
Use solder: Sn-Zn solder
Ultrasonic wave: have
Solder horn temperature: 350 DEG C
Soldering iron vibrates output power: 10W
Preheating: 200 DEG C
Photo before Figure 13 (b) display welding.
The photo for (having ultrasonic wave) after Figure 13 (c) display welding.Can be from the photo after welding clearly, Figure 13
(b) on the photo before welding, clear bead width extensively welding and be bonded in longitudinal width it is wide bus electricity
On pole 15.
Figure 13 (d) is under the same conditions, when no ultrasonic wave, because that can not be welded on bus electrode 15, so being recorded as nothing
Picture data.
It, being capable of ultrasonic bonding well (assigning preheating) with Sn-Zn solder as more than.Moreover, can be by conducting wire 17
Adhesiveness ultrasonic bonding well is on it.
Figure 14 shows the welding photo (D) of Sn-Pb solder (fluxing agent) of the invention.
Figure 14 (a) shows welding condition, and the photo before Figure 14 (b) display welding (has ultrasound after Figure 14 (c) display welding
Wave) photo.
In Figure 14 (a), welding condition is following diagrams.
Use solder: Sn-Pb solder (fluxing agent)
Ultrasonic wave: nothing
Solder horn temperature: 350 DEG C
Preheating: 200 DEG C
Photo before Figure 14 (b) display welding.
The photo for (having ultrasonic wave) after Figure 14 (c) display welding.Can be from the photo after welding clearly, Figure 14
(b) on the photo before welding, clear scaling powder width extensively becomes blister and can not to be welded on longitudinal width wide
On wealthy bus electrode 15.
As more than, Sn-Pb solder can not form plating in no ultrasonic wave, fluxing agent, by the foam coverage of scaling powder
Surfacing material.Moreover, conducting wire 17 can not be also welded thereon.
Figure 15 shows the welding photo (E) of Sn-Pb solder (fluxing agent) of the invention.
Figure 15 (a) shows welding condition, the photo before Figure 15 (b) display welding, the photo after Figure 15 (c) display welding.
In Figure 15 (a), welding condition is following diagrams.
Use solder: Sn-Pb solder (fluxing agent)
Ultrasonic wave: nothing
Solder horn temperature: 400 DEG C
Preheating: 200 DEG C
Photo before Figure 15 (b) display welding.
The photo for (having ultrasonic wave) after Figure 15 (c) display welding.Can be from the photo after welding clearly, Figure 15
(b) on the photo before welding, clear scaling powder width extensively becomes blister and can not to be welded on longitudinal width wide
On wealthy bus electrode 15.
As more than, Sn-Pb solder can not form plating in no ultrasonic wave, fluxing agent, by the foam coverage of scaling powder
Solder.Moreover, conducting wire 17 can not be also welded thereon.
Figure 16 shows the welding photo (F) of Sn-Pb solder of the invention (flux-free without).
Figure 16 (a) shows welding condition, the photo before Figure 16 (b) display welding, the photo after Figure 16 (c) display welding.
In Figure 16 (a), welding condition is following diagrams.
Use solder: Sn-Pb solder (flux-free without)
Ultrasonic wave: have
Solder horn temperature: 350 DEG C
Soldering iron vibrates output power: 10W
Preheating: 200 DEG C
Photo before Figure 16 (b) display welding.
The photo for (having ultrasonic wave) after Figure 16 (c) display welding, can be from the photo after welding clearly, Figure 16
(b) on the photo before welding, clear scaling powder width extensively becomes blister and can not to be welded on longitudinal width wide
On wealthy bus electrode 15.
Figure 16 (d) is under the same conditions, because that can not be welded on bus electrode 15 when no ultrasonic wave, so being recorded as without a licence
Sheet data.
As more than, Sn-Pb solder (flux-free without) being capable of ultrasonic bonding well (assigning preheating).Moreover, energy
Enough on it by the ultrasonic bonding well of 17 adhesiveness of conducting wire.
Claims (16)
1. a kind of solar cell, production has the region that high electron concentration is generated in irradiation light on substrate, and on the area
It is formed with the insulating film of transmitted ray, and the solar cell has from the electronics outlet taking-up electronics for being formed in the insulating film
Bus electrode, wherein
In order to form the bus electrode, the vanadate comprising vanadium and barium is mixed into weight ratio 20% to 70% in conductive paste
The conductive glass of glass and the electron conduction with aforementioned vanadate glass is used as frit, and progress 1 second or more and 1
Firing within minute, and while being formed in aforementioned firing, improves the bus electrode of electron conduction, and has used conductive glass
As conductive paste.
2. solar cell as described in claim 1, wherein the frit is the vanadate glass comprising vanadium, barium and iron.
3. solar cell as described in claim 1, wherein being will be conductive within 1 second or more and 1 minute of the firing time
The firing time and the firing time other than the vanadate glass for the vanadate glass for including in property cream are set as identical.
4. solar cell as claimed in claim 2, wherein being will be conductive within 1 second or more and 1 minute of the firing time
The firing time and the firing time other than the vanadate glass for the vanadate glass for including in property cream are set as identical.
5. the solar cell as described in any one of Claims 1-4 item, wherein the conductive glass is without Pb.
6. the solar cell as described in any one of Claims 1-4 item, wherein being formed by bus electrode in the firing
It is provided with lead electrode.
7. solar cell as claimed in claim 6, wherein the lead electrode is the conducting wire of electric conductivity, by the conducting wire with ultrasound
Wave is welded on the bus electrode, and bonds the conducting wire well with the bus electrode through solder.
8. solar cell as claimed in claim 7, wherein in the melting temperature that the bus electrode is preheated to solder from room temperature
It spends in the state of temperature below, the bus electrode and the conducting wire is subjected to ultrasonic bonding.
9. a kind of manufacturing method of solar cell, be the region of high electron concentration is generated when being produced on irradiation light on substrate, and
The insulating film of transmitted ray is formed on the area, and the solar cell has from the electronics outlet for being formed in the insulating film
Take out the bus electrode of electronics, wherein the manufacturing method of the solar cell has following step:
In order to form the bus electrode, the vanadate comprising vanadium and barium is mixed into weight ratio 20% to 70% in conductive paste
The conductive glass of glass and the electron conduction with aforementioned vanadate glass is used as frit, and progress 1 second or more and 1
Firing within minute, and while being formed in aforementioned firing, improves the bus electrode of electron conduction, and used conductive glass
As conductive paste.
10. the manufacturing method of solar cell as claimed in claim 9, wherein the frit is the vanadium comprising vanadium, barium and iron
Silicate glass.
11. the manufacturing method of solar cell as claimed in claim 9, wherein 1 second or more and 1 minute of the firing time with
Firing time and the firing time other than the vanadate glass interior, that be the vanadate glass that will include in conductive paste
It is set as identical.
12. the manufacturing method of solar cell as claimed in claim 10, wherein 1 second or more and 1 minute of the firing time
Within, when being the firing time for the vanadate glass that will include and firing other than the vanadate glass in conductive paste
Between be set as identical.
13. the manufacturing method of the solar cell as described in any one of claim 9 to 12, wherein the conductive glass without
Pb。
14. the manufacturing method of the solar cell as described in any one of claim 9 to 12, wherein being formed in the firing
Bus electrode on lead electrode is set.
15. the manufacturing method of solar cell as claimed in claim 14, wherein the lead electrode is conducting wire, by this
Conducting wire carries out ultrasonic bonding in the bus electrode, and bonds the conducting wire well with the bus electrode through solder.
16. the manufacturing method of solar cell as claimed in claim 15, wherein the bus electrode to be preheated to from room temperature
In the state of the melting temperature of solder temperature below, the bus electrode and the conducting wire are subjected to ultrasonic bonding.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016015873A JP6804199B2 (en) | 2015-03-30 | 2016-01-29 | Solar cells and methods of manufacturing solar cells |
| JP2016-015873 | 2016-01-29 | ||
| CN201610371213.4A CN107026211A (en) | 2015-03-30 | 2016-05-30 | The manufacture method of solar cell and solar cell |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610371213.4A Division CN107026211A (en) | 2015-03-30 | 2016-05-30 | The manufacture method of solar cell and solar cell |
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| CN110379868A true CN110379868A (en) | 2019-10-25 |
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| CN201910670414.8A Pending CN110379868A (en) | 2016-01-29 | 2016-05-30 | The manufacturing method of solar cell and solar cell |
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| JP2003034548A (en) * | 2001-07-18 | 2003-02-07 | Kitakyushu Foundation For The Advancement Of Industry Science & Technology | Vanadate glass and its manufacturing method |
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| US20150107664A1 (en) * | 2013-10-21 | 2015-04-23 | Samsung Sdi Co., Ltd. | Composition for solar cell electrodes, electrode fabricated using the same, and solar cell having the electrode |
| US20150333198A1 (en) * | 2014-05-15 | 2015-11-19 | Samsung Sdi Co., Ltd. | Composition for forming solar cell electrode and electrode prepared using the same |
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| JP2003034548A (en) * | 2001-07-18 | 2003-02-07 | Kitakyushu Foundation For The Advancement Of Industry Science & Technology | Vanadate glass and its manufacturing method |
| CN101189719A (en) * | 2005-06-03 | 2008-05-28 | 费罗公司 | Lead free solar cell contacts |
| CN101809758A (en) * | 2007-09-27 | 2010-08-18 | 株式会社村田制作所 | Ag electrode paste, solar battery cell, and process for producing the solar battery cell |
| US20150107664A1 (en) * | 2013-10-21 | 2015-04-23 | Samsung Sdi Co., Ltd. | Composition for solar cell electrodes, electrode fabricated using the same, and solar cell having the electrode |
| US20150333198A1 (en) * | 2014-05-15 | 2015-11-19 | Samsung Sdi Co., Ltd. | Composition for forming solar cell electrode and electrode prepared using the same |
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